WO2003005439A3 - Method of manufacturing a semiconductor device comprising mos-transistors having gate oxides of different thicknesses - Google Patents
Method of manufacturing a semiconductor device comprising mos-transistors having gate oxides of different thicknesses Download PDFInfo
- Publication number
- WO2003005439A3 WO2003005439A3 PCT/IB2002/002463 IB0202463W WO03005439A3 WO 2003005439 A3 WO2003005439 A3 WO 2003005439A3 IB 0202463 W IB0202463 W IB 0202463W WO 03005439 A3 WO03005439 A3 WO 03005439A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- transistors
- mos
- gate
- type
- semiconductor device
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 239000007772 electrode material Substances 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 230000003647 oxidation Effects 0.000 abstract 2
- 238000007254 oxidation reaction Methods 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
- H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
- H01L21/28176—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation with a treatment, e.g. annealing, after the formation of the definitive gate conductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823462—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the gate insulating layers, e.g. different gate insulating layer thicknesses, particular gate insulator materials or particular gate insulator implants
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/981—Utilizing varying dielectric thickness
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Formation Of Insulating Films (AREA)
Abstract
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003511306A JP2004534401A (en) | 2001-07-03 | 2002-06-21 | Method of manufacturing semiconductor device having a plurality of MOS transistors having gate oxides of different thickness |
EP02738519A EP1459377A2 (en) | 2001-07-03 | 2002-06-21 | Method of manufacturing a semiconductor device comprising mos-transistors having gate oxides of different thicknesses |
KR10-2003-7003177A KR20030038725A (en) | 2001-07-03 | 2002-06-21 | Method of manufacturing a semiconductor device comprising mos-transistors having gate oxides of different thicknesses |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP01202553.2 | 2001-07-03 | ||
EP01202553 | 2001-07-03 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2003005439A2 WO2003005439A2 (en) | 2003-01-16 |
WO2003005439A3 true WO2003005439A3 (en) | 2004-05-21 |
Family
ID=8180586
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/IB2002/002463 WO2003005439A2 (en) | 2001-07-03 | 2002-06-21 | Method of manufacturing a semiconductor device comprising mos-transistors having gate oxides of different thicknesses |
Country Status (6)
Country | Link |
---|---|
US (1) | US6645817B2 (en) |
EP (1) | EP1459377A2 (en) |
JP (1) | JP2004534401A (en) |
KR (1) | KR20030038725A (en) |
TW (1) | TW569339B (en) |
WO (1) | WO2003005439A2 (en) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100496888B1 (en) * | 2003-03-06 | 2005-06-23 | 삼성전자주식회사 | Semiconductor device having triple gate insulating layers and method of fabricating the same |
US7084035B2 (en) * | 2004-04-13 | 2006-08-01 | Ricoh Company, Ltd. | Semiconductor device placing high, medium, and low voltage transistors on the same substrate |
US8361863B2 (en) | 2008-11-13 | 2013-01-29 | Mosys, Inc. | Embedded DRAM with multiple gate oxide thicknesses |
JP5444176B2 (en) * | 2010-09-14 | 2014-03-19 | パナソニック株式会社 | Semiconductor device |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5371026A (en) * | 1992-11-30 | 1994-12-06 | Motorola Inc. | Method for fabricating paired MOS transistors having a current-gain differential |
EP0713249A1 (en) * | 1994-10-28 | 1996-05-22 | Texas Instruments Incorporated | Method for forming semiconductor devices with oxide layers having different thicknesses |
EP0751559A1 (en) * | 1995-06-30 | 1997-01-02 | STMicroelectronics S.r.l. | Process for forming an integrated circuit comprising non-volatile memory cells and side transistors and corresponding IC |
EP0966036A2 (en) * | 1998-06-15 | 1999-12-22 | Samsung Electronics Co., Ltd. | Method for fabricating a semiconductor device having different gate oxide layers |
JP2000332125A (en) * | 1999-05-18 | 2000-11-30 | Nec Corp | Semiconductor device and its manufacture |
US6198140B1 (en) * | 1999-09-08 | 2001-03-06 | Denso Corporation | Semiconductor device including several transistors and method of manufacturing the same |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL187328C (en) * | 1980-12-23 | 1991-08-16 | Philips Nv | METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE |
US5672521A (en) * | 1995-11-21 | 1997-09-30 | Advanced Micro Devices, Inc. | Method of forming multiple gate oxide thicknesses on a wafer substrate |
US6258673B1 (en) * | 1999-12-22 | 2001-07-10 | International Business Machines Corporation | Multiple thickness of gate oxide |
JP2001298096A (en) * | 2000-04-17 | 2001-10-26 | Nec Corp | Method of manufacturing semiconductor device |
-
2002
- 2002-06-21 KR KR10-2003-7003177A patent/KR20030038725A/en not_active Application Discontinuation
- 2002-06-21 EP EP02738519A patent/EP1459377A2/en not_active Withdrawn
- 2002-06-21 WO PCT/IB2002/002463 patent/WO2003005439A2/en not_active Application Discontinuation
- 2002-06-21 JP JP2003511306A patent/JP2004534401A/en active Pending
- 2002-06-28 US US10/185,883 patent/US6645817B2/en not_active Expired - Lifetime
- 2002-07-30 TW TW091117009A patent/TW569339B/en active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5371026A (en) * | 1992-11-30 | 1994-12-06 | Motorola Inc. | Method for fabricating paired MOS transistors having a current-gain differential |
EP0713249A1 (en) * | 1994-10-28 | 1996-05-22 | Texas Instruments Incorporated | Method for forming semiconductor devices with oxide layers having different thicknesses |
EP0751559A1 (en) * | 1995-06-30 | 1997-01-02 | STMicroelectronics S.r.l. | Process for forming an integrated circuit comprising non-volatile memory cells and side transistors and corresponding IC |
EP0966036A2 (en) * | 1998-06-15 | 1999-12-22 | Samsung Electronics Co., Ltd. | Method for fabricating a semiconductor device having different gate oxide layers |
JP2000332125A (en) * | 1999-05-18 | 2000-11-30 | Nec Corp | Semiconductor device and its manufacture |
US6391701B1 (en) * | 1999-05-18 | 2002-05-21 | Nec Corporation | Semiconductor device and process of fabrication thereof |
US6198140B1 (en) * | 1999-09-08 | 2001-03-06 | Denso Corporation | Semiconductor device including several transistors and method of manufacturing the same |
Non-Patent Citations (2)
Title |
---|
ONO A ET AL: "A MULTI-GATE DIELECTRIC TECHNOLOGY USING HYDROGEN PRE-TREATMENT FOR100NM GENERATION SYSTEM-ON-A-CHIP", 2001 SYMPOSIUM ON VLSI TECHNOLOGY. DIGEST OF TECHNICAL PAPERS. KYOTO, JAPAN, JUNE 12 - 14, 2001, SYMPOSIUM ON VLSI TECHNOLOGY, TOKYO: JSAP, JP, 12 June 2001 (2001-06-12), pages 79 - 80, XP001043378, ISBN: 4-89114-012-7 * |
PATENT ABSTRACTS OF JAPAN vol. 2000, no. 14 5 March 2001 (2001-03-05) * |
Also Published As
Publication number | Publication date |
---|---|
US6645817B2 (en) | 2003-11-11 |
US20030045058A1 (en) | 2003-03-06 |
KR20030038725A (en) | 2003-05-16 |
WO2003005439A2 (en) | 2003-01-16 |
JP2004534401A (en) | 2004-11-11 |
TW569339B (en) | 2004-01-01 |
EP1459377A2 (en) | 2004-09-22 |
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