WO2002101352A2 - Dispositifs electroniques et optroniques fabriques a partir de couches minces nanostructurees a rapport surface/volume eleve - Google Patents

Dispositifs electroniques et optroniques fabriques a partir de couches minces nanostructurees a rapport surface/volume eleve Download PDF

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WO2002101352A2
WO2002101352A2 PCT/US2002/017909 US0217909W WO02101352A2 WO 2002101352 A2 WO2002101352 A2 WO 2002101352A2 US 0217909 W US0217909 W US 0217909W WO 02101352 A2 WO02101352 A2 WO 02101352A2
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electronic
nano
void
opto
organic
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PCT/US2002/017909
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English (en)
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WO2002101352A8 (fr
WO2002101352A3 (fr
Inventor
Kaan A. Kalkan
Stephen J. Fonash
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The Penn State Research Foundation
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Priority claimed from US10/104,759 external-priority patent/US7065091B2/en
Priority claimed from US10/144,456 external-priority patent/US7122790B2/en
Application filed by The Penn State Research Foundation filed Critical The Penn State Research Foundation
Priority to AU2002324437A priority Critical patent/AU2002324437A1/en
Publication of WO2002101352A2 publication Critical patent/WO2002101352A2/fr
Publication of WO2002101352A3 publication Critical patent/WO2002101352A3/fr
Publication of WO2002101352A8 publication Critical patent/WO2002101352A8/fr

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
    • H10K30/35—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains comprising inorganic nanostructures, e.g. CdSe nanoparticles
    • H10K30/352—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains comprising inorganic nanostructures, e.g. CdSe nanoparticles the inorganic nanostructures being nanotubes or nanowires, e.g. CdTe nanotubes in P3HT polymer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/50—Photovoltaic [PV] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/114—Poly-phenylenevinylene; Derivatives thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present invention generally relates to a novel production method for the production of electronic and opto-electronic devices from an interpenetrating network configuration of nanostructured high surface to volume ratio porous thin films with organic/inorganic metal, semiconductor or insulator material positioned within the interconnected void volume of the nanostructure.
  • Nanoparticles are proposed for, and used for, providing a high surface area to volume ratio material. Besides the large surface area they provide, nanoparticles can be embedded in organic/inorganic semiconductor/insulator materials (nanocomposite systems) to obtain a high interface area that can be exploited in, for example, the following optoelectronic and electronic applications: (a) charge separation functions for such applications as photovoltaics and detectors; (b) charge injection functions for such applications as light emitting devices; (c) charge storage functions for capacitors; and (d) ohmic contact-like functions for such applications as contacting molecular electronic structures. There are difficulties with nanoparticles, however.
  • the present invention solves these two problems by using deposited nanostructured high surface to volume ratio materials. These materials allow a manageable high interface area which is easily contacted electrically.
  • each nanoparticle or nanoparticle surface must be electrically connected to the outside (by a set of electrodes) for electrical and opto- electronic function. This is best achieved if the nanoparticles are arranged so that they are interconnected to the electrodes providing continuous electrical pathways to these particles.
  • these particles will often fail to make good electrical contacts even if the volume fraction of nanoparticles is made close to unity.
  • This approach involves formation of a thin film of a nanostructured high surface area to volume ratio material on an electrode substrate or a patterned set of electrodes on a substrate.
  • the basic elements (building blocks) of this nanostructure are embedded in an interconnected void matrix with the attributes of high surface to volume ratio but with electrical connectivity to the substrate electrode.
  • Once the interconnected void network of this film material is filled with a secondary material a composite is formed with high interface area.
  • each component of the composite structure is conformally connected. Hence, any region of the composite system including the interface has continuous electrical connection to the outside.
  • a method of fabricating an electronic/optoelectronic device from an interpenetrating network of a nanostructured high surface area to volume ratio material and an organic/inorganic matrix material comprising the steps of: a) obtaining a high surface area to volume ratio film material onto an electrode substrate (or a patterned electrode substrate), such that any region of this film material is in electrical connectivity with the electrode substrate by virtue of the morphology.
  • the film material may comprise an array of nano and/or micro-protrusions electrically connected to the electrode substrate and separated by a void matrix; b) filling the void matrix of the high surface to volume film with an organic/inorganic solid or liquid material; and c) defining an electrode or set of electrodes onto the organic or inorganic intra-void material embedded in said void matrix.
  • the basic elements of the high surface area to volume film material can be selected from the group consisting of: nanotubes, nanorods, nanowires, nanocolumns or aggregates thereof, oriented molecules, chains of atoms, chains of molecules, fullerenes, nanoparticles, aggregates of nanoparticles, and any combinations thereof.
  • the organic/inorganic intra-void material is at least one selected from the group consisting of: organic semiconductor material, organic insulator material, inorganic semiconductor material, inorganic insulator material, conjugated polymers, metals, organometallics, self assembling molecular layers and any combinations thereof.
  • the high surface area to volume porous film is preferably deposited onto the conductive (electrode) substrate or on a patterned substrate by, for example, chemical vapor deposition, plasma-enhanced chemical vapor deposition, physical vapor deposition, or electrodeposition. Or it may be obtained by electrochemical etching.
  • the organic or inorganic intra-void material may be applied into the void matrix in liquid form, molten form, as dissolved in a solvent, or by electrochemical means. Additionally, the intra-void material may be embedded into the void matrix by exposing the film material to the vapor of the intra-void material, thus causing the vapor to condense inside the void matrix.
  • the interpenetrating network of nanostructured high surface area to volume ratio material and intra-void material may be used for fabricating a charge separation and collection device such as a chemical sensor, photodetector or a photovoltaic device.
  • the network may also be used for fabricating a charge injection device such as an electroluminescent device.
  • the interpenetrating network of nanostructured high surface area to volume ratio material and organic/inorganic intra-void material may also be used for fabricating a charge storage device (capacitor).
  • the nanostructured high surface area to volume ratio material may also be used as an ohmic-like contact to the intra-void material.
  • the interpenetrating network of nanostructured high surface area to volume ratio material and intra-void material may further be used to fabricate an electronic device in which the electronic current through the nano-scale basic elements of the film (charge transport paths) are regulated by the electric potential applied to the filling material surrounding the nano-scale basic elements or vice versa.
  • This electronic device functions as a field effect-type transistor.
  • Fig. 1 is an electronic/optoelectronic device fabricated from an interpenetrating network of a nanostructured thin film and an organic semiconductor/insulator material with a large interface;
  • Fig. 2 is a field effect device according to the present invention.
  • Fig. 3 is a scanning electron microscope view of a nanostructured high surface to volume column void network Si film deposited by high density plasma on a highly conductive (approximately 100 S/cm) ⁇ 100> Si substrate.
  • the film was grown at 10 mTorr, 100°C, 400 W, using 40 seem H 2 and 2 seem SiH 4 for 10 minutes.
  • the present invention is directed to a method for fabricating an interpenetrating network of a nanostructured high surface area to volume ratio material and an organic or inorganic intra-void material comprising: a) obtaining a high surface area to volume ratio film material onto an electrode substrate (or a patterned electrode substrate), such that any region of this film material is in electrical connectivity with the electrode substrate by virtue of the morphology.
  • the film material may comprise an array of nano and/or micro- protrusions electrically connected to the electrode substrate and separated by a void matrix; b) filling the void matrix of the high surface to volume film with an organic/inorganic solid or liquid material; and c) defining an electrode or set of electrodes onto the organic or inorganic intra-void material embedded in said void matrix.
  • the basic elements of the high surface area to volume film material can be selected from the group consisting of: nanotubes, nanorods, nanowires, nanocolumns or aggregates thereof, oriented molecules, chains of atoms, chains of molecules, fullerenes, nanoparticles, aggregates of nanoparticles, and any combinations thereof.
  • the basic elements of the high surface area to volume film comprises a material selected from the group consisting of: silicon, silicon dioxide, germanium, germanium oxide, indium, gallium, cadmium, selenium, tellurium, and alloys and compounds thereof, carbon, hydrogen, semiconductors, insulators, metals, ceramics, polymers, other inorganic material, organic material, or any combinations thereof.
  • the organic/inorganic filling material may comprise a semiconductor, an insulator, a metal, an organometallic, a self assembling molecular layer, a conjugated polymer, and any combinations thereof.
  • the high surface area to volume porous film is preferably deposited onto the conductive (electrode) layer substrate or on a patterned substrate by, for example, chemical vapor deposition, plasma-enhanced chemical vapor deposition, physical vapor deposition, or electrodeposition. Or it may be obtained by electrochemical etching.
  • the organic or inorganic intra-void material may be applied into the void matrix in liquid form, molten form as dissolved in a solvent, or by electrochemical means. Additionally, the intra-void material may be embedded into the void matrix by exposing the film material to the vapor of the intra-void material, thus causing the vapor to condense inside the void matrix.
  • Fig. 1 there is shown a schematic representation of an electronic or opto-electronic device. The device is fabricated from an interpenetrating network of a nanostructured thin film and a metal, semiconductor, or insulator material forming a large interface area.
  • the high surface to volume thin film material consisting of an array of nano -protrusions 13 separated by voids is first formed on a conductive substrate or a conductive layer 11 on a substrate 10 (electrode).
  • the basic elements of the high surface to volume film are nano- protrusions as an example. However various other morphologies are possible as long as the nano-scale basic elements each have a continuous charge conduction path to the substrate electrode.
  • the void volume is filled with an appropriate organic/inorganic metal, semiconductor or insulator inter-void material 12.
  • an appropriate electrode 14 (or set of electrodes) is defined onto the inter- void material. Thereby each material (nanoprotrusions and matrix) is conformally connected to its own electrode. Contacts to electrodes 15 provide connection to the outside world.
  • a wafer (p+ Si) 20 is a source (+) 21.
  • Al 26 is a drain (0) 24.
  • Tri-p-tolylamide 23 provides a gate (-) 22.
  • Silicon nano -protrusions (n- type) 25 are shown in this embodiment.
  • the nanostructured film material is a comprised of nano-scale basic elements each with the attributes of (1) high surface to volume ratio and (2) electrical connectivity to the substrate electrode.
  • the nano- scale basic elements e.g., nanowires, nanocolumns, etc.
  • Figure 1 illustrates an example where the film consists of an array of protruding nanocolumns, nanowires, or nanotubes aligned nearly perpendicular to the substrate electrode.
  • nano-building-elements can also be in clusters of sub- elements (e.g., nanoparticles, nanofibers, etc.) that form various nanostructures such as regular nanocolumn or nanowire arrays or fractal coral-like morphologies.
  • each element can be in the form of a single nanotube or nanowire or a chain of atoms/molecules (i.e., oriented giant molecules).
  • the organic/inorganic based appropriate semiconductor, metal or insulator intra-void material can be introduced into the void matrix.
  • the intra-void material can be applied into the high surface to volume film in liquid form, molten, as dissolved in a solvent or by electrochemical means.
  • the intra-void material can be filled into the voids by exposing the high surface to volume film to the vapor of the intra-void material and subsequent capillary condensation of the vapor inside the voids.
  • the intra-void material occupies the void network inside the solid porous film, it forms a nanostructured network.
  • each material interpenetrates each other with a nanostructured network creating a large interface area.
  • the resulting composite nanostructure consists of an interpenetrating network of a nanostructured thin film and a metal/semiconductor/ insulator material with a large interface.
  • each material high surface to volume film and intra-void material
  • Fig. 1 A representative illustration of this approach is given in Fig. 1.
  • Organic semiconductor materials are also called molecular semiconductors since the building blocks are single organic molecules or conjugated polymer molecules.
  • photoexcitation creates electron-hole pairs which are strongly bound (e.g., approximately 0.4 eV in poly(p- phenylenevinylene)).
  • Charge collection requires the separation of electron and hole into free carriers.
  • An exciton (electron-hole pair) can efficiently be split at interfaces between materials with different electron and hole affinities and ionization potentials, where electron is captured by the higher electron affinity side and hole by the lower hole affinity side.
  • the lifetime of exciton is short (100-1000 ps), so only excitons created within approximately 10 nm of the interface will ever reach it.
  • charge collection directly scales with the interface area, which must be large per unit of light penetrating cross sectional area. Furthermore, optimum charge collection occurs if continuous conduction pathways are provided to the electrodes for electrons and holes from the interfaces, where they are separated.
  • an efficient charge separation and collection device may be fabricated from interpenetrating nanostructured thin films and organic semiconductors.
  • the high electron affinity difference between inorganic semiconductors (approximately 4 eV) and most organic semiconductors (approximately 3 eV) ensures efficient charge separation at the interface as long as the band gap of the inorganic semiconductor is not smaller than that of the organic semiconductor by the electron affinity difference.
  • the nanostructured thin film/organic interface will provide an interconnected and extremely large surface for efficient charge photogeneration, separation and collection.
  • the interpenetrating network of both inorganic and organic will provide continuous conduction pathways for electrons and holes to the electrodes. Also, if such a structure is operated with the two electrodes biased, the device will also function as a photodetector. If such a structure is operated under bias and if it is penetrated by adsorbed species, the device will function as a sensor if such penetration changes the device response.
  • the nanocrystals have continuous electrical conduction pathways down to the electrode as proposed in this invention, transport of electrons will not involve tunneling, and they will be transported efficiently by drift or diffusion from where they are photogenerated to where they are collected. Consequently, a higher quantum efficiency can be achieved.
  • An attractive feature associated with the large interface formed by interpenetrating network of nanostructured thin films and organic/inorganic semiconductors is that a very effective electrical contact can be made between the nanostructured film material and the intra-void material. Therefore, light emitting devices can be designed based on efficient carrier injection and subsequent radiative recombination or based on carrier excitation.
  • the electron affinity or the hole affinity difference between the two materials at the interface may not be in favor of charge injection and rather impede the transport.
  • a high band gap layer e.g., silicon oxide, silicon nitride
  • the conduction band edge (or the valence band edge) of the film material can be aligned with the lowest unoccupied molecular orbital (or the highest occupied molecular orbital) of the organic semiconductor material enabling an efficient carrier injection (i.e., by tunneling through the high band-gap material).
  • EXAMPLE 3 (Charge capacitors) Two conducting nanostructured layers can be made to sandwich an insulating layer to form a charge capacitor with a high capacitance due to the high surface area of the two layers (electrodes).
  • the insulating layer should be thin enough to enable electric fields at highly oblique angles between the two electrode surfaces so that the effective capacitor area is close to that of the interface.
  • the insulating layer should also be thick enough to prevent significant charge (current) leakage across electrodes.
  • a variety of structures can be considered to fabricate such a capacitor device with the approach of this invention.
  • the following procedure can be taken: (1) deposition of a highly conductive and porous nanostructured Si thin film with an interconnected void volume (first electrode), (2) coating of the inner surface of the Si film with an oxide by oxidation (i.e., thermal, anodic, or plasma oxidation) or by molecular self-assembly (insulating layer), and (3) filling the void volume with a high conductivity organic semiconductor material conformally covering the oxide surface (second electrode).
  • An organometallic can also be used instead of the organic semiconductor material with a further step of annealing to convert it to a metal.
  • the void volume of the film material can be filled with an organic insulator, which will planarize the film surface.
  • a planar conductive layer is deposited on the organic layer as the second electrode.
  • the deposited nanostructured porous film can be an insulator deposited on an electrode, or can be made an insulator after deposition by further processing (e.g., Si can be oxidized to obtain SiO 2 ).
  • a conductive organic material can be applied on the insulating film filling the void volume to generate the second electrode, which will be nanostructured and with a large surface area.
  • the nanostructured high surface to volume films of this invention are ideal for forming ohmic-like contacts to materials systems, in general. This is because their high surface allows many points for carrier transfer.
  • the high field that can exist at the nano-scale features of these films can give rise to locally very high electric fields and to tunneling.
  • This ohmic contact role of these films can be combined with their ability to affix molecules to allow our films to serve as ohmic contacts in molecular electronics. This affixing and electrical contacting of molecules can be forced to take place in prescribed locations by patterning techniques and masking.
  • a field effect device can be fabricated from the composite nanostructure described in this invention wherein the electric current through said nanoprotrusions of the porous film is regulated by varying the electric potential of the intra-void material surrounding the nanoprotrusions.
  • the nanoprotrusions must be connected to a second electrode in addition to the electrode at their base for the flow of electric current and therefore the resulting device consists of three electrical contacts. Therefore, the nanoprotrusions serve as the channel and the electrodes they are connected to as source and drain, whereas at least a portion of the intra-void material serves as the gate of this field effect transistor.
  • any currents between the gate and channel, source or drain will be leakage currents and therefore must be minimized.
  • This can be achieved by isolating the conducting intra-void material from other regions with a high band-gap material layer at the interfaces.
  • the nanoprotrusions are Si, their surface may be oxidized to insulate them from the filling material (gate) with an interfacial silicon oxide layer.
  • self assembling molecules can be attached to the interface to serve as the required insulator layer.
  • Another approach would be to use a highly doped high band-gap material for the filling material (gate).
  • Fig. 2 depicts an example device with Si nanoprotrusions and tri-p-tolylamine, a highly doped high band-gap material, as the filling material (gate).
  • the gate when the gate is negatively biased it will invert the Si protrusions to be hole carriers and significantly enhance the hole current from source (p Si) to drain (Al) (turning on the transistor).
  • the leakage hole currents from Si or Al to tri-p-tolylamine will be impeded by the significant differences in ionization potentials at the interfaces (> 1 eN).
  • the leakage electron currents from tri-p-tolylamine to Si or Al will be insignificant, since tri-p-tolylamine is a hole transport material and is depleted of electrons.
  • EXAMPLE 6 (Chemical sensors) A structure based on this concept of the electrically contacted high surface to volume film and intra-void material with its electrical contact(s) such as seen in Fig. 1 can also be used as a chemical sensor. Sensing will occur when the species to be detected interact with the intra-void material thereby modifying its electrical or dielectric properties resulting in a change in the ac or dc behavior observed though the electrical contacts.

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  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Light Receiving Elements (AREA)
  • Photovoltaic Devices (AREA)

Abstract

La présente invention concerne un dispositif électronique ou optronique ou une sonde chimique comprenant un réseau interpénétrant de matériau en couche mince nanostructurée à rapport surface/volume élevé et d'un matériau organique/inorganique formant un nanocomposite. Ce matériau en couche à grande aire de surface pour le volume s'obtient d'abord sur un substrat d'électrode, de façon que les éléments de base nanométriques comprenant ce matériau en couche soient inclus dans une matrice à vides tout en conservant une connectivité électrique avec le substrat d'électrode. Par exemple, le matériau en couche peut comprendre une matrice de nano-protubérances électriquement connectées au substrat d'électrode et séparées par une matrice à vides. Le réseau interpénétrant résulte de l'introduction d'un matériau organique/inorganique approprié dans le volume vide du matériau en couche mince nanostructurée à rapport surface/volume élevé. Par la suite, une ou plusieurs électrodes sont définies sur le film ou sur le matériau à intra-vides de façon à réaliser un certain dispositif. La séparation de charge, l'injection de charge, le stockage de charge, les structures à effet de champ, les contacts ohmiques et les sondes chimiques sont possibles.
PCT/US2002/017909 2001-06-08 2002-06-06 Dispositifs electroniques et optroniques fabriques a partir de couches minces nanostructurees a rapport surface/volume eleve WO2002101352A2 (fr)

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AU2002324437A AU2002324437A1 (en) 2001-06-08 2002-06-06 Electronic and opto-electronic devices fabricated from nanostructured high surface to volume ratio thin films

Applications Claiming Priority (6)

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US29685701P 2001-06-08 2001-06-08
US60/296,857 2001-06-08
US10/104,759 2002-03-21
US10/104,759 US7065091B2 (en) 2002-03-21 2002-03-21 Method and apparatus for scheduling and interleaving items using quantum and deficit values including but not limited to systems using multiple active sets of items or mini-quantum values
US10/144,456 2002-05-13
US10/144,456 US7122790B2 (en) 2000-05-30 2002-05-13 Matrix-free desorption ionization mass spectrometry using tailored morphology layer devices

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1485955A1 (fr) * 2002-03-19 2004-12-15 The Regents of the University of California Couches minces de nanocristal semi-conducteur/polymere conjugue
EP1533857A1 (fr) * 2003-11-18 2005-05-25 Lucent Technologies Inc. Batterie à electromouillage comprenant une életrode avec une surface nanostructurée
GB2421353A (en) * 2004-12-14 2006-06-21 Cambridge Display Tech Ltd Method of preparing opto-electronic device
US7678495B2 (en) 2005-01-31 2010-03-16 Alcatel-Lucent Usa Inc. Graphitic nanostructured battery
US7777303B2 (en) 2002-03-19 2010-08-17 The Regents Of The University Of California Semiconductor-nanocrystal/conjugated polymer thin films

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5264722A (en) * 1992-06-12 1993-11-23 The United States Of America As Represented By The Secretary Of The Navy Nanochannel glass matrix used in making mesoscopic structures
US5562516A (en) * 1993-09-08 1996-10-08 Silicon Video Corporation Field-emitter fabrication using charged-particle tracks
US5747180A (en) * 1995-05-19 1998-05-05 University Of Notre Dame Du Lac Electrochemical synthesis of quasi-periodic quantum dot and nanostructure arrays
US5879828A (en) * 1997-10-10 1999-03-09 Minnesota Mining And Manufacturing Company Membrane electrode assembly
US6038060A (en) * 1997-01-16 2000-03-14 Crowley; Robert Joseph Optical antenna array for harmonic generation, mixing and signal amplification
US6057637A (en) * 1996-09-13 2000-05-02 The Regents Of The University Of California Field emission electron source
WO2000074932A1 (fr) * 1999-06-03 2000-12-14 The Penn State Research Foundation Matieres a reseau de colonnes de porosite de surface deposees en film mince
US6172902B1 (en) * 1998-08-12 2001-01-09 Ecole Polytechnique Federale De Lausanne (Epfl) Non-volatile magnetic random access memory
US6185961B1 (en) * 1999-01-27 2001-02-13 The United States Of America As Represented By The Secretary Of The Navy Nanopost arrays and process for making same
US6214195B1 (en) * 1998-09-14 2001-04-10 Nanomaterials Research Corporation Method and device for transforming chemical compositions
US6231744B1 (en) * 1997-04-24 2001-05-15 Massachusetts Institute Of Technology Process for fabricating an array of nanowires

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5264722A (en) * 1992-06-12 1993-11-23 The United States Of America As Represented By The Secretary Of The Navy Nanochannel glass matrix used in making mesoscopic structures
US5562516A (en) * 1993-09-08 1996-10-08 Silicon Video Corporation Field-emitter fabrication using charged-particle tracks
US5747180A (en) * 1995-05-19 1998-05-05 University Of Notre Dame Du Lac Electrochemical synthesis of quasi-periodic quantum dot and nanostructure arrays
US6057637A (en) * 1996-09-13 2000-05-02 The Regents Of The University Of California Field emission electron source
US6038060A (en) * 1997-01-16 2000-03-14 Crowley; Robert Joseph Optical antenna array for harmonic generation, mixing and signal amplification
US6231744B1 (en) * 1997-04-24 2001-05-15 Massachusetts Institute Of Technology Process for fabricating an array of nanowires
US5879828A (en) * 1997-10-10 1999-03-09 Minnesota Mining And Manufacturing Company Membrane electrode assembly
US6172902B1 (en) * 1998-08-12 2001-01-09 Ecole Polytechnique Federale De Lausanne (Epfl) Non-volatile magnetic random access memory
US6214195B1 (en) * 1998-09-14 2001-04-10 Nanomaterials Research Corporation Method and device for transforming chemical compositions
US6185961B1 (en) * 1999-01-27 2001-02-13 The United States Of America As Represented By The Secretary Of The Navy Nanopost arrays and process for making same
WO2000074932A1 (fr) * 1999-06-03 2000-12-14 The Penn State Research Foundation Matieres a reseau de colonnes de porosite de surface deposees en film mince

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8753916B2 (en) 2001-10-24 2014-06-17 The Regents Of The University Of California Semiconductor-nanocrystal/conjugated polymer thin films
EP1485955A1 (fr) * 2002-03-19 2004-12-15 The Regents of the University of California Couches minces de nanocristal semi-conducteur/polymere conjugue
EP1485955A4 (fr) * 2002-03-19 2008-03-05 Univ California Couches minces de nanocristal semi-conducteur/polymere conjugue
US7777303B2 (en) 2002-03-19 2010-08-17 The Regents Of The University Of California Semiconductor-nanocrystal/conjugated polymer thin films
EP1533857A1 (fr) * 2003-11-18 2005-05-25 Lucent Technologies Inc. Batterie à electromouillage comprenant une életrode avec une surface nanostructurée
US7227235B2 (en) 2003-11-18 2007-06-05 Lucent Technologies Inc. Electrowetting battery having a nanostructured electrode surface
CN100459234C (zh) * 2003-11-18 2009-02-04 朗迅科技公司 具有纳米结构电极表面的电润湿电池
KR101107876B1 (ko) * 2003-11-18 2012-01-30 알카텔-루센트 유에스에이 인코포레이티드 배터리 장치와 목표물 지정 장치
GB2421353A (en) * 2004-12-14 2006-06-21 Cambridge Display Tech Ltd Method of preparing opto-electronic device
GB2434696B (en) * 2004-12-14 2010-07-21 Cambridge Display Tech Ltd Method of preparing opto-electronic device
US9211566B2 (en) 2004-12-14 2015-12-15 Cambridge Display Technology Limited Method of preparing opto-electronic device
US7678495B2 (en) 2005-01-31 2010-03-16 Alcatel-Lucent Usa Inc. Graphitic nanostructured battery

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