WO2002093991A1 - Method for electroless deposition and patterning of a metal on a substrate - Google Patents

Method for electroless deposition and patterning of a metal on a substrate Download PDF

Info

Publication number
WO2002093991A1
WO2002093991A1 PCT/IB2002/001225 IB0201225W WO02093991A1 WO 2002093991 A1 WO2002093991 A1 WO 2002093991A1 IB 0201225 W IB0201225 W IB 0201225W WO 02093991 A1 WO02093991 A1 WO 02093991A1
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
layer
metal layer
metal
etching away
Prior art date
Application number
PCT/IB2002/001225
Other languages
French (fr)
Inventor
Emmanuel Delamarche
John C. Flake
Matthias Geissler
William S. Graham
Roy H. Magnuson
Bruno Michel
Heinz Schmid
Original Assignee
International Business Machines Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corporation filed Critical International Business Machines Corporation
Priority to KR10-2003-7013492A priority Critical patent/KR100532515B1/en
Priority to JP2002590724A priority patent/JP3808037B2/en
Publication of WO2002093991A1 publication Critical patent/WO2002093991A1/en

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00Nanotechnology for materials or surface science, e.g. nanocomposites
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/02Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/06Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601Process or apparatus
    • C23C18/1603Process or apparatus coating on selected surface areas
    • C23C18/1605Process or apparatus coating on selected surface areas by masking
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601Process or apparatus
    • C23C18/1603Process or apparatus coating on selected surface areas
    • C23C18/1607Process or apparatus coating on selected surface areas by direct patterning
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/18Pretreatment of the material to be coated
    • C23C18/1851Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material
    • C23C18/1872Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material by chemical pretreatment
    • C23C18/1886Multistep pretreatment
    • C23C18/1893Multistep pretreatment with use of organic or inorganic compounds other than metals, first
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23FNON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00Etching metallic material by chemical means
    • C23F1/02Local etching
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23FNON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00Etching metallic material by chemical means
    • C23F1/10Etching compositions
    • C23F1/14Aqueous compositions
    • C23F1/32Alkaline compositions
    • C23F1/34Alkaline compositions for etching copper or alloys thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814Conductive parts
    • H01L21/4846Leads on or in insulating or insulated substrates, e.g. metallisation
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/02Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/06Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
    • H05K3/061Etching masks
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/01Tools for processing; Objects used during processing
    • H05K2203/0104Tools for processing; Objects used during processing for patterning or coating
    • H05K2203/0108Male die used for patterning, punching or transferring
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/05Patterning and lithography; Masks; Details of resist
    • H05K2203/0502Patterning and lithography
    • H05K2203/0537Transfer of pre-fabricated insulating pattern
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/05Patterning and lithography; Masks; Details of resist
    • H05K2203/0562Details of resist
    • H05K2203/0585Second resist used as mask for selective stripping of first resist
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/11Treatments characterised by their effect, e.g. heating, cooling, roughening
    • H05K2203/1168Graft-polymerization
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/0073Masks not provided for in groups H05K3/02 - H05K3/46, e.g. for photomechanical production of patterned surfaces
    • H05K3/0079Masks not provided for in groups H05K3/02 - H05K3/46, e.g. for photomechanical production of patterned surfaces characterised by the method of application or removal of the mask
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/10Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/18Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
    • H05K3/181Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/38Improvement of the adhesion between the insulating substrate and the metal
    • H05K3/389Improvement of the adhesion between the insulating substrate and the metal by the use of a coupling agent, e.g. silane

Definitions

  • the present invention relates to - ' a method for electroless deposition and patterning of a metal on a substrate. More specifically, the invention relates to such a method wherein the process steps of microcontact printing and electroless deposition are combined.
  • Patterning a metal over a substrate is a common need and important process in modern technology; it is applied, e.g., in microelectronics and display manufacturing.
  • This patterning usually requires the vacuum deposition of a metal over the entire surface of a substrate and its selective removal using photolithography and etching techniques.
  • the vacuum deposition of the metal and the consumption of photoresist constitute considerable cost factors in the fabrication of metallic structures, and limit the size of substrates that can be patterned by this approach.
  • Electroless deposition of metals such as copper, silver, gold, nickel, rhodium, and cobalt is a process widely used for the production of fine metal patterns in printed circuits. Electroless deposition occurs by an autocatalytic redox process, in which the cation of the metal to be deposited is reduced by a soluble reductant at the surface of the metal features being formed, or at the surface of catalysts used to initiate the deposition. This redox process generally takes place only on surfaces capable of catalyzing it. Noncatalytic surfaces first have to be activated with a metal catalyst such as palladium before the metalization can occur.
  • a metal catalyst such as palladium
  • Selective deposition can be achieved either by the selective deactivation of a catalytic substrate or by the selective activation of a nonreactive surface by a catalyst.
  • a catalyst Several methods of producing patterned catalysts are known, most of them based on photolithographic techniques.
  • the size of the features produced by electroless deposition of metals can be as small as 0.1 ⁇ m.
  • Microcontact printing can also provide an alternative to the patterning of metals using photolithography.
  • Microcontact printing (hereinafter ⁇ CP) is a technique for forming patterns of organic monolayers with micrometer and submicron lateral dimensions. It offers experimental simplicity and flexibility in forming certain types of patterns by printing molecules from a stamp onto a substrate. So far, most of the prior art relies on the remarkable ability of long chain alkanethiolates to form self-assembled monolayers on, e.g., gold or other metals. These patterns can act as nanometer-thin resists by protecting the supporting metal from corrosion by appropriately formulated etchants, or can allow for the selective placement of fluids on hydrophilic regions of the printed pattern.
  • Patterns of self-assembled monolayers having lateral dimensions that can be less than 1 micrometer can be formed by using a solution of alkanethiols dissolved in ethanol as the perhapsink", and by printing them on a metal substrate using an elastomeric whilstamp".
  • the stamp is fabricated by molding a silicone elastomer using a master (or mold) prepared using photolithography or using other techniques such as electron-beam lithography. Patterning of the surface of such a stamp is, e.g., disclosed in EP-B-0 784 543.
  • WO 00/79023 Al discloses methods for electroless deposition of a conductive material on a substrate using a stamp having a patterned surface which is pressed onto the surface of a substrate for printing the substrate and providing a pattern of a catalyst on the substrate on which metal deposition occurs in the course of electroless deposition by immersing the printed substrate in a plating bath.
  • these two references have documented how to combine ⁇ CP and ELD.
  • these approaches involve (i) derivatizing the substrate with chemical functionalities having an affinity for a catalyst for ELD, (ii) inking a micropatterned PDMS stamp with a solution of catalyst, (iii) printing the catalyst on the substrate, and (iv) ELD of a metal over the printed catalytic pattern.
  • this strategy can be referred to as Robinson Print & ELD" .
  • This strategy can vary depending on what exactly is printed on the substrate. Apart from printing the catalyst onto the substrate, it is equally possible to print molecules onto a substrate to enhance the affinity of the catalyst for that substrate.
  • the printed substrate must then be immersed into a bath of catalyst to add the catalyst to the printed regions of the substrate.
  • Another variation consists of homogeneously coating a substrate with a layer of catalyst for ELD and of printing molecules to deactivate the catalyst already present on the surface of that substrate.
  • Still another variation can be to homogeneously coat a substrate with a layer of pre-catalyst and to print molecules to this precoated substrate to activate the pre-catalytic particles.
  • Typical catalysts for ELD such as Pd/Sn colloids are used in highly acidic (usually concentrated hydrochloric acid) solutions because these colloids are usually unstable in other types of solutions.
  • These colloids are catalysts for ELD of many metals and are very active. They are particularly well optimized for ELD but the compatibility of a highly acidic ink with a printing tool is questionable: HCl gas from the ink would corrode a printing tool and the metallic backplane of the stamp, and these vapors would also pose safety problems .
  • Achieving good adhesion between the electroless-deposited metal and its substrate is the most important challenge in ELD.
  • An electroless-deposited metal can lose its adhesion to the substrate in the plating bath during deposition, during the removal of the plated substrate from the ELD bath, during rinsing or drying the freshly plated metal, or later during post-processing or subsequent device-fabrication steps.
  • good adhesion between a deposit and a substrate is always desirable and often the result of optimizing all the details of an ELD process, starting with treating the substrate received from the supplier and post-processing the deposited metal to relieve stress in the materials.
  • Fig. 1A is an optical image with the light in reflection, showing a high-quality pattern of lines of NiB alloy on glass patterned according to the invention
  • Fig. IB is an optical image with the light transmitted through the glass substrate corresponding to the image of Fig. 1A;
  • Fig. 1C is an atomic force microscope image of the pattern according to Figs. 1A and IB;
  • Fig. 2 shows X-ray photoemission spectra obtained on macroscopic areas of NiB and glass resulting from patterning NiB according to the invention.
  • Another strategy is, according to the present invention, to use ELD to prepare a blanket film of a metal, which can be subsequently patterned by means of microcontact printing.
  • This strategy is called
  • SlideELD & Print This strategy is called
  • both strategies are not symmetric, i.e. they do not entail simply performing the same steps in a different or reverse order.
  • the present invention proposes a new combination of the process steps of ⁇ CP and ELD.
  • the first metal surface for printing i.e., annealing, reduction of the surface oxide using forming gas, oxidation in air, cleaning, or depositing additional metal films via electrodeposition or electroless deposition and prepare the surface of the second metal for microcontact printing;
  • the simplest possible approach contains the steps of ELD of Au, ⁇ CP a self-assembled monolayer of alkanethiols on Au and a subsequent selective etch of Au .
  • Microcontact printing alkanethiols on Au substrates down to a resolution of 1 micrometer is the only application of microcontact printing that is firmly established (c.f., Delamarche et al . , J. Phys . Chem. B, vol. 102, 1998, p3324-3334). It may then seem optimal to develop a strategy based on ELD of Au and printing the deposited Au with thiols and etching it for patterning.
  • a multilayer metallization and printing process may be preferred.
  • an electrolessly deposited film of Ni , Co, or Pd (or alloys thereof) may be used as a first layer and a second metal layer such as Cu, Ag, or Au (ELD or electroplated) may be used for printing and as an etch barrier.
  • Ni and Ni alloys NiB, NiP, NiWP, NiReP, etc. are excellent candidates for ELD on smooth insulating substrates .
  • Ni baths are commercially available that yield plated Ni with good conductivity.
  • a glass treatment and a process in general has been developed that improves the adhesion on glass of electroless deposited Ni .
  • Cu is convenient to electroplate, inexpensive, compatible with Ni when it is electroplated, and it can be a good substrate for microcontact printing alkanethiols .
  • the high conductivity of NiB and Cu helps keeping the current density homogeneous during the electroplating step on large samples, which is important to obtain an electroplated mask having a uniform thickness.
  • Printed Cu can be etched selectively to serve as a mask for the underlying Ni . The Cu mask can be easily removed at the end of the process if desired.
  • a typical flow of an outfitELD & Print" process according to the present invention is as follows:
  • An organic layer having an affinity for a catalyst for ELD is grafted from solution onto a glass substrate.
  • a homogeneous layer of catalytic particles is deposited onto the treated glass from solution and "activation" of the catalyst is done.
  • the substrate is immersed in an ELD bath to deposit the desired metal .
  • the substrate is preferably mounted in a cathode frame and immersed in an electrochemical cell where the sacrificial mask is electroplated.
  • the frame contacts the metal layer on all its periphery to distribute a homogeneous current to this layer and to prevent damaging (scratching) the metal layer in the inner part of the substrate where devices will be fabricated.
  • the mask is selectively protected by microcontact printing a resist (self-assembling monolayer, SAM) .
  • the mask and the electroless deposited metal are then selectively etched.
  • a glass substrate (Corning #1737) is immersed in a solution of N- (2-aminoethyl) -3-aminopropyltrimethoxysilane (hereinafter EDA-Si, from Gelest #SIA0591.0, 0.250 ml in 120 ml of ethanol and 20 ml of water) for 3 min at room temperature. During this step, EDA binds to the glass. The glass is then removed from the grafting bath and rinsed with water and dried. The glass substrate is baked for 10 min on a hot plate at 150 a C or in an oven. This results in a homogeneous, thin grafted layer on the glass that has an affinity for some Pd/Sn colloids. The treated glass can be stored or used immediately after it has cooled.
  • EDA-Si N- (2-aminoethyl) -3-aminopropyltrimethoxysilane
  • the glass substrate is then immersed in an acidic Pd/Sn solution (from Fidelity, article #1018, diluted 50% with HCl cone.) for 30 s to form a homogeneous layer of Pd/Sn catalytic particles for ELD on the grafted glass.
  • an acidic Pd/Sn solution from Fidelity, article #1018, diluted 50% with HCl cone.
  • the Pd/Sn glass substrate is rinsed copiously with deionized water and immersed in an "accelerator” solution (from Fidelity, article #1019, 10% in deionized water) for 30 s, then rinsed with deionized water and dried.
  • the thus activated glass substrate is placed on a hot plate at 80 S C. It has to be mentioned that this activating or heating step is optional - in some cases the ELD might work well with a non-activated catalyst.
  • the pre-heated glass substrate is immersed in a NiB (Shipley, Niposit® 468) , prepared as recommended, pH adjusted to 7.2 with ammonia) electroless plating bath operated at 60 2 C, with no stirring, to deposit NiB at a rate of about 20-30 nm min -1 .
  • the thickness of the ELD NiB film may be controlled by the deposition rate and immersion time.
  • the glass with a thin (about 50 to 400 nm) NiB film is placed on a hot plate at 150 a C for 10 min to improve the adhesion between the Ni deposit and the glass substrate.
  • a pyrophosphate Cu bath is used to electroplate a thin layer (50 nm) of Cu onto the NiB deposit: 1.1 g of CuS0 4 '5H 2 0, 3.0 g of Na_P 2 0 7 and 20.0 mg of NaH 2 P0 4 are dissolved in 120 ml of deionized water.
  • This bath has a pH of about 9 and is used at 30 2 C.
  • the native oxide of Ni typically present on electroless deposited NiB is etched prior to electroplating by immersing the NiB-covered samples in a 0.3 M HCl solution and rinsing them with deionized water. Removing NiO x is not strictly necessary but provides better adhesion between Ni and Cu .
  • Electroplating of Cu is done with a potentiostat , model 263A (sold by EG&G) operating at a potential fixed between -0.7 and -1.0 V (against a Ag/AgCl reference electrode), with a platinized titanium grid (30 cm 2 , samples with larger areas require larger electrodes) as the counterelectrode .
  • a potentiostat model 263A (sold by EG&G) operating at a potential fixed between -0.7 and -1.0 V (against a Ag/AgCl reference electrode)
  • a platinized titanium grid (30 cm 2 , samples with larger areas require larger electrodes) as the counterelectrode .
  • Monitoring the current during the plating indicates the rate of Cu deposition and its thickness (0.15 Ccm "2 for 50 nm of Cu) .
  • the Cu-covered substrates are immersed in a 0.1 M HCl solution for 10 s to remove copper-oxide from the surface, rinsed with deionized water and dried before printing to ensure the formation of a homogeneous and dense protective monolayer during the printing step.
  • a micropatterned stamp made of PDMS (Sylgard® 184 from Dow Corning) is first inked with a 0.2 mM solution of eicosanethiol (ECT, supplied by Robinson Brothers Limited, article #SV109/4) in ethanol, dried and used to print the electroplated Cu for 20 s, which results in the formation of a monolayer in the regions of contact .
  • the nonprinted Cu is etched at room temperature in a 0.025 M solution of KCN (in deionized water, buffered at pH 12) with moderate stirring (etch rate about 50 nm of Cu per min) . No etch of the NiB deposit during this step was observed.
  • the NiB is etched in 1 M H 2 S0 4 at room temperature with moderate stirring (etch rate about 5-10 nm of NiB per min, this etch rate also depends on the geometry of the pattern) for 20 min.
  • the selectivity of this etch is very high if the Cu mask is still protected by the thiol monolayer; the thiol monolayer on the Cu is removed only later for this reason.
  • the sample is immersed in a water solution containing KOH and 10% of H 2 0 2 (pH 14) for 20 min to remove all organic layers (ECT monolayer on copper and EDA grafted layer on the glass) .
  • the Pd/Sn catalyst present on the glass where NiB has been etched can also be removed during this step by underetching Sn, the EDA graft and minute quantities of glass .
  • the electroplated Cu starts equally to be etched during this step, although at a very low rate. This step can be important if the areas left in between the NiB must be well transparent to light or electrically insulated because some Pd/Sn left in these regions could block some light or conduct some current between adjacent, proximal NiB structures .
  • the resulting Ni pattern on the glass is again immersed in a solution containing KOH/10% H 2 0 2 for a short period of time ( ⁇ 5 min), and washed with a 0.3 M solution of HCl for 2 min. Rinsing with water and drying completes this procedure.
  • the last two steps are optional. Keeping the sacrificial mask might not be a problem depending on the application, and removing the organic layer and catalyst might as well not be necessary depending on the chosen application.
  • the optical image in reflection (Fig. 1A) reveals a high-quality pattern of lines of NiB on glass patterned as presented in the example.
  • the corresponding image in transmission (Fig. IB) emphasizes the possibility of patterning light-absorbing structures on glass with the method according to the invention.
  • the atomic force microscope image (Fig. 1C) obtained over the edge of one line reveals the good resolution and contrast of this pattern.
  • Fig. 2 The X-ray photoemission spectra shown in Fig. 2 were obtained on macroscopic areas of NiB and glass resulting from patterning NiB as presented in the example.
  • the high level of control over the etch chemistry in this example leads to a glass surface free of metal (Cu, Ni , Pd/Sn), whereas the Ni part of the sample is free of Cu and covered with a thin nickel oxide layer.
  • Electroless deposition of a metal onto a substrate is a method that must be established in all its details for each case. Beyond the above-mentioned examples, the invention can be extended to:
  • substrates different types of glass, ceramics, oxidized surfaces, Si/Si0 2 , indium-tin-oxide, indium-zirconium-oxide, tantalum oxide, aluminum oxide, etc .
  • substrates different types of glass, ceramics, oxidized surfaces, Si/Si0 2 , indium-tin-oxide, indium-zirconium-oxide, tantalum oxide, aluminum oxide, etc .
  • electroless-deposited first metal layers e.g., Ni, NiB, NiP, NiWP, Co, CoWP, CoP, Pd, etc.
  • electroplated masks e.g., Au, Cu, and Ag
  • alkanethiols showing selective protection for the mask and which are compatible with PDMS micropatterned stamps.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Composite Materials (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Chemically Coating (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
  • Manufacturing Of Printed Wiring (AREA)

Abstract

A method for manufacturing a patterned metal layer on a substrate is provided which comprises the step of electrolessly depositing a blanket metal film of a metal onto a substrate, followed by subsequently patterning said metal layer by means of microcontact printing. The deposited metal can be overplated with another metal, which can be microcontact printed to serve as an etch mask.

Description

D E S C R I P T I O N
Method for Electroless Deposition and Patterning of a Metal on a
Substrate
Field of the Invention
The present invention relates to -'a method for electroless deposition and patterning of a metal on a substrate. More specifically, the invention relates to such a method wherein the process steps of microcontact printing and electroless deposition are combined.
Background of the Invention, Prior Art
Patterning a metal over a substrate is a common need and important process in modern technology; it is applied, e.g., in microelectronics and display manufacturing. This patterning usually requires the vacuum deposition of a metal over the entire surface of a substrate and its selective removal using photolithography and etching techniques. The vacuum deposition of the metal and the consumption of photoresist constitute considerable cost factors in the fabrication of metallic structures, and limit the size of substrates that can be patterned by this approach.
The technique of electroless deposition (hereinafter ELD) of metals on (insulating) surfaces can provide an alternative to the vacuum deposition of metals on substrates (cf., e.g. "Electroless Plating: Fundamentals and Applications", G . O . Mallory, J.B. Hajdu, Eds.; American Electroplaters and Surface Finishers Society, Orlando, Fl, 1990) .
Electroless deposition of metals such as copper, silver, gold, nickel, rhodium, and cobalt is a process widely used for the production of fine metal patterns in printed circuits. Electroless deposition occurs by an autocatalytic redox process, in which the cation of the metal to be deposited is reduced by a soluble reductant at the surface of the metal features being formed, or at the surface of catalysts used to initiate the deposition. This redox process generally takes place only on surfaces capable of catalyzing it. Noncatalytic surfaces first have to be activated with a metal catalyst such as palladium before the metalization can occur. Selective deposition can be achieved either by the selective deactivation of a catalytic substrate or by the selective activation of a nonreactive surface by a catalyst. Several methods of producing patterned catalysts are known, most of them based on photolithographic techniques. The size of the features produced by electroless deposition of metals can be as small as 0.1 μm.
Microcontact printing can also provide an alternative to the patterning of metals using photolithography.
Microcontact printing (hereinafter μCP) is a technique for forming patterns of organic monolayers with micrometer and submicron lateral dimensions. It offers experimental simplicity and flexibility in forming certain types of patterns by printing molecules from a stamp onto a substrate. So far, most of the prior art relies on the remarkable ability of long chain alkanethiolates to form self-assembled monolayers on, e.g., gold or other metals. These patterns can act as nanometer-thin resists by protecting the supporting metal from corrosion by appropriately formulated etchants, or can allow for the selective placement of fluids on hydrophilic regions of the printed pattern. Patterns of self-assembled monolayers having lateral dimensions that can be less than 1 micrometer can be formed by using a solution of alkanethiols dissolved in ethanol as the „ink", and by printing them on a metal substrate using an elastomeric „stamp". The stamp is fabricated by molding a silicone elastomer using a master (or mold) prepared using photolithography or using other techniques such as electron-beam lithography. Patterning of the surface of such a stamp is, e.g., disclosed in EP-B-0 784 543.
In Hidber et al . , „Microcontact Printing of Palladium Colloids: Micron-Scale Patterning by Electroless Deposition of Copper", Langmuir, vol. 12, 1996, pl375-1380), a method for forming micron- and sub icron-scale patterns of copper on surfaces is diclosed. This method uses μCP to print colloids that serve as catalysts for the selective electroless deposition of copper. A patterned elastomeric stamp fabricated from poly- (dimethylsilo- xane) (hereinafter PDMS) is used to deliver the catalyst (palladium colloids stabilized with tertaalkylammonium bromides and dissolved in toluene) to the surface of a substrate. Electroless deposition of copper on the substrate occured only where palladium colloids were printed and transferred to the substrate. Electroless deposition catalyzed by the colloids resulted in the formation of metal structures with features having submicron dimensions.
WO 00/79023 Al discloses methods for electroless deposition of a conductive material on a substrate using a stamp having a patterned surface which is pressed onto the surface of a substrate for printing the substrate and providing a pattern of a catalyst on the substrate on which metal deposition occurs in the course of electroless deposition by immersing the printed substrate in a plating bath.
Thus, these two references have documented how to combine μCP and ELD. In summary, these approaches involve (i) derivatizing the substrate with chemical functionalities having an affinity for a catalyst for ELD, (ii) inking a micropatterned PDMS stamp with a solution of catalyst, (iii) printing the catalyst on the substrate, and (iv) ELD of a metal over the printed catalytic pattern. In short, this strategy can be referred to as „ Print & ELD" . This strategy can vary depending on what exactly is printed on the substrate. Apart from printing the catalyst onto the substrate, it is equally possible to print molecules onto a substrate to enhance the affinity of the catalyst for that substrate. In this variation, the printed substrate must then be immersed into a bath of catalyst to add the catalyst to the printed regions of the substrate. Another variation consists of homogeneously coating a substrate with a layer of catalyst for ELD and of printing molecules to deactivate the catalyst already present on the surface of that substrate. Still another variation can be to homogeneously coat a substrate with a layer of pre-catalyst and to print molecules to this precoated substrate to activate the pre-catalytic particles.
However, the „Print & ELD" strategy and its possible variations show some serious drawbacks. First, chemicals providing adhesion between a catalyst for ELD and glass substrates tend to be self-reactive and cannot be inked easily onto a "classical" PDMS stamp, nor transferred homogeneously onto a substrate. PMDS is a hydrophobic elastomer and a surface treatment of PDMS to render it hydrophilic may also be necessary in such a case.
Next, typical catalysts for ELD such as Pd/Sn colloids are used in highly acidic (usually concentrated hydrochloric acid) solutions because these colloids are usually unstable in other types of solutions. These colloids are catalysts for ELD of many metals and are very active. They are particularly well optimized for ELD but the compatibility of a highly acidic ink with a printing tool is questionable: HCl gas from the ink would corrode a printing tool and the metallic backplane of the stamp, and these vapors would also pose safety problems .
In addition to these drawbacks, no activators (or deactivators) of catalysts for ELD, that can be printed have been identified so far that are compatible with stamps. This excludes using the other approaches to „ Print & ELD" mentioned above to combine ELD and μCP .
Furthermore, when trying to use an ink for „Print & ELD", the following questions arise that have not yet been solved: How is the stamp to be inked? How should it be dried? How could a stamp be used repeatedly with only one inking? How should the ink be cleaned from a stamp? How can diffusion of the ink over the substrate be controlled and prevented during printing? How could homogeneous inking of a stamp and transfer of an ink be achieved without variable catalytic activity across large substrates? And, importantly, how can a reasonable process throughput be achieved to render „Print & ELD" economically attractive to solve the problem of reducing the cost of fabrication of metallic structures on substrates?
Achieving good adhesion between the electroless-deposited metal and its substrate is the most important challenge in ELD. An electroless-deposited metal can lose its adhesion to the substrate in the plating bath during deposition, during the removal of the plated substrate from the ELD bath, during rinsing or drying the freshly plated metal, or later during post-processing or subsequent device-fabrication steps. As a consequence, good adhesion between a deposit and a substrate is always desirable and often the result of optimizing all the details of an ELD process, starting with treating the substrate received from the supplier and post-processing the deposited metal to relieve stress in the materials.
Summary of the Invention
It is therefore an object of the present invention to provide a method for electroless deposition and patterning of a metal on a substrate that combines the process steps of microcontact printing and electroless deposition. It is still another object of the present invention to provide such a method that allows good adhesion between an electroless- deposited metal and its substrate if one step involves microcontact printing.
These and other objects and advantages are achieved by the method disclosed in claim 1.
Preferred embodiments of the invention are described in the dependent claims .
Brief Description of the Drawings
The invention will be described in more detail hereinafter in connection with the drawings, in which
Fig. 1A is an optical image with the light in reflection, showing a high-quality pattern of lines of NiB alloy on glass patterned according to the invention;
Fig. IB is an optical image with the light transmitted through the glass substrate corresponding to the image of Fig. 1A;
Fig. 1C is an atomic force microscope image of the pattern according to Figs. 1A and IB; and
Fig. 2 shows X-ray photoemission spectra obtained on macroscopic areas of NiB and glass resulting from patterning NiB according to the invention. Detailed Description of the Preferred Embodiment
As has already been mentioned above, the strategy proposed by Hidber et al . and in WO 00/79023 Al can be referred to as „Print & ELD" .
Another strategy is, according to the present invention, to use ELD to prepare a blanket film of a metal, which can be subsequently patterned by means of microcontact printing. This strategy is called „ELD & Print" . It is important to note that both strategies are not symmetric, i.e. they do not entail simply performing the same steps in a different or reverse order.
The present invention proposes a new combination of the process steps of μCP and ELD.
Inverting the sequence for performing the printing and the electroless deposition steps solves many of the above-mentioned problems and necessitates, in contrast, a quite new process flow. This inversion compromises the localized ELD of a metal but, instead, the deposited metal can be overplated with another metal, which can be microcontact printed to serve as an etch mask.
In general, the process flow is as follows:
1. Preparing the electrically insulating surface by deposition of a catalyst;
2. Electrolessly depositing a first metal from a solution;
3. Preparing the first metal surface for printing, i.e., annealing, reduction of the surface oxide using forming gas, oxidation in air, cleaning, or depositing additional metal films via electrodeposition or electroless deposition and prepare the surface of the second metal for microcontact printing;
4. Patterning this surface using μCP of a suitable ink that acts as an etch barrier in the subsequent etch step; and
5. Etching the metal or metal films in suitable solutions .
The simplest possible approach contains the steps of ELD of Au, μCP a self-assembled monolayer of alkanethiols on Au and a subsequent selective etch of Au .
Microcontact printing alkanethiols on Au substrates down to a resolution of 1 micrometer is the only application of microcontact printing that is firmly established (c.f., Delamarche et al . , J. Phys . Chem. B, vol. 102, 1998, p3324-3334). It may then seem optimal to develop a strategy based on ELD of Au and printing the deposited Au with thiols and etching it for patterning.
This approach is not favorable due to issues such as cost, poor adhesion of Au to the substrate, and, depending on the sought application, semiconductor contamination (by formation of recombination centers (traps) in silicon due to the likely diffusion of Au atoms into adjacent Si layers) . Ag may also be used for this application; however, ELD of Ag is difficult to control and typically results in films with poor adhesion to smooth insulating substrates. Ag poses also problems with semiconductor contamination, and Ag is prone to electromigration and corrosion. Cu can also be printed with alkanethiols and etched selectively if one takes into account the oxide present at the surface of this metal and its high sensitivity to certain etchants. As with Au and Ag, the adhesion of plated Cu films on smooth insulating surfaces is limited.
Therefore, another approach is presented, namely ELD of a first metal followed by deposition of a second metal and printing.
Since a single ELD metal (e.g., Au, Ag, Cu) may not provide desirable properties such as good adhesion and compatibility with μCP, a multilayer metallization and printing process may be preferred. For example an electrolessly deposited film of Ni , Co, or Pd (or alloys thereof) may be used as a first layer and a second metal layer such as Cu, Ag, or Au (ELD or electroplated) may be used for printing and as an etch barrier. In particular, Ni and Ni alloys (NiB, NiP, NiWP, NiReP, etc.) are excellent candidates for ELD on smooth insulating substrates . Several Ni baths are commercially available that yield plated Ni with good conductivity. In this invention, a glass treatment and a process in general has been developed that improves the adhesion on glass of electroless deposited Ni . Cu is convenient to electroplate, inexpensive, compatible with Ni when it is electroplated, and it can be a good substrate for microcontact printing alkanethiols . The high conductivity of NiB and Cu helps keeping the current density homogeneous during the electroplating step on large samples, which is important to obtain an electroplated mask having a uniform thickness. Printed Cu can be etched selectively to serve as a mask for the underlying Ni . The Cu mask can be easily removed at the end of the process if desired.
A typical flow of an „ELD & Print" process according to the present invention is as follows:
1. An organic layer having an affinity for a catalyst for ELD is grafted from solution onto a glass substrate.
2. A homogeneous layer of catalytic particles is deposited onto the treated glass from solution and "activation" of the catalyst is done.
3. The substrate is immersed in an ELD bath to deposit the desired metal . 4. The substrate is preferably mounted in a cathode frame and immersed in an electrochemical cell where the sacrificial mask is electroplated. The frame contacts the metal layer on all its periphery to distribute a homogeneous current to this layer and to prevent damaging (scratching) the metal layer in the inner part of the substrate where devices will be fabricated.
5. The mask is selectively protected by microcontact printing a resist (self-assembling monolayer, SAM) .
6. The mask and the electroless deposited metal are then selectively etched.
7. The mask is eventually removed entirely.
In the following, an example for the method according to the invention is given. It has to be mentioned that this is an example only and that the present invention is not restricted to the substrates, metallurgy, etch baths, chemicals, etc., mentioned therein, but can be used with other substrates and materials, as will be readily apparent for a skilled worker.
A glass substrate (Corning #1737) is immersed in a solution of N- (2-aminoethyl) -3-aminopropyltrimethoxysilane (hereinafter EDA-Si, from Gelest #SIA0591.0, 0.250 ml in 120 ml of ethanol and 20 ml of water) for 3 min at room temperature. During this step, EDA binds to the glass. The glass is then removed from the grafting bath and rinsed with water and dried. The glass substrate is baked for 10 min on a hot plate at 150 aC or in an oven. This results in a homogeneous, thin grafted layer on the glass that has an affinity for some Pd/Sn colloids. The treated glass can be stored or used immediately after it has cooled.
The glass substrate is then immersed in an acidic Pd/Sn solution (from Fidelity, article #1018, diluted 50% with HCl cone.) for 30 s to form a homogeneous layer of Pd/Sn catalytic particles for ELD on the grafted glass.
Subsequently, the Pd/Sn glass substrate is rinsed copiously with deionized water and immersed in an "accelerator" solution (from Fidelity, article #1019, 10% in deionized water) for 30 s, then rinsed with deionized water and dried. The thus activated glass substrate is placed on a hot plate at 80 SC. It has to be mentioned that this activating or heating step is optional - in some cases the ELD might work well with a non-activated catalyst.
Now, the pre-heated glass substrate is immersed in a NiB (Shipley, Niposit® 468) , prepared as recommended, pH adjusted to 7.2 with ammonia) electroless plating bath operated at 60 2C, with no stirring, to deposit NiB at a rate of about 20-30 nm min-1. The thickness of the ELD NiB film may be controlled by the deposition rate and immersion time.
Subsequently, the glass with a thin (about 50 to 400 nm) NiB film is placed on a hot plate at 150 aC for 10 min to improve the adhesion between the Ni deposit and the glass substrate.
Following this step, a pyrophosphate Cu bath is used to electroplate a thin layer (50 nm) of Cu onto the NiB deposit: 1.1 g of CuS04'5H20, 3.0 g of Na_P207 and 20.0 mg of NaH2P04 are dissolved in 120 ml of deionized water. This bath has a pH of about 9 and is used at 30 2C. The native oxide of Ni typically present on electroless deposited NiB is etched prior to electroplating by immersing the NiB-covered samples in a 0.3 M HCl solution and rinsing them with deionized water. Removing NiOx is not strictly necessary but provides better adhesion between Ni and Cu .
Electroplating of Cu is done with a potentiostat , model 263A (sold by EG&G) operating at a potential fixed between -0.7 and -1.0 V (against a Ag/AgCl reference electrode), with a platinized titanium grid (30 cm2, samples with larger areas require larger electrodes) as the counterelectrode . Monitoring the current during the plating indicates the rate of Cu deposition and its thickness (0.15 Ccm"2 for 50 nm of Cu) .
The Cu-covered substrates are immersed in a 0.1 M HCl solution for 10 s to remove copper-oxide from the surface, rinsed with deionized water and dried before printing to ensure the formation of a homogeneous and dense protective monolayer during the printing step.
Now, a micropatterned stamp made of PDMS (Sylgard® 184 from Dow Corning) is first inked with a 0.2 mM solution of eicosanethiol (ECT, supplied by Robinson Brothers Limited, article #SV109/4) in ethanol, dried and used to print the electroplated Cu for 20 s, which results in the formation of a monolayer in the regions of contact .
The nonprinted Cu is etched at room temperature in a 0.025 M solution of KCN (in deionized water, buffered at pH 12) with moderate stirring (etch rate about 50 nm of Cu per min) . No etch of the NiB deposit during this step was observed.
Subsequently, the NiB is etched in 1 M H2S04 at room temperature with moderate stirring (etch rate about 5-10 nm of NiB per min, this etch rate also depends on the geometry of the pattern) for 20 min. The selectivity of this etch is very high if the Cu mask is still protected by the thiol monolayer; the thiol monolayer on the Cu is removed only later for this reason.
Now the sample is immersed in a water solution containing KOH and 10% of H202 (pH 14) for 20 min to remove all organic layers (ECT monolayer on copper and EDA grafted layer on the glass) . The Pd/Sn catalyst present on the glass where NiB has been etched can also be removed during this step by underetching Sn, the EDA graft and minute quantities of glass . The electroplated Cu starts equally to be etched during this step, although at a very low rate. This step can be important if the areas left in between the NiB must be well transparent to light or electrically insulated because some Pd/Sn left in these regions could block some light or conduct some current between adjacent, proximal NiB structures .
All remaining Cu is then etched within 2 min in a 0.025 M solution of KCN in water (buffered at pH 12) .
The resulting Ni pattern on the glass is again immersed in a solution containing KOH/10% H202 for a short period of time (<5 min), and washed with a 0.3 M solution of HCl for 2 min. Rinsing with water and drying completes this procedure.
The last two steps are optional. Keeping the sacrificial mask might not be a problem depending on the application, and removing the organic layer and catalyst might as well not be necessary depending on the chosen application.
The optical image in reflection (Fig. 1A) reveals a high-quality pattern of lines of NiB on glass patterned as presented in the example. The corresponding image in transmission (Fig. IB) emphasizes the possibility of patterning light-absorbing structures on glass with the method according to the invention. Finally, the atomic force microscope image (Fig. 1C) obtained over the edge of one line reveals the good resolution and contrast of this pattern.
The X-ray photoemission spectra shown in Fig. 2 were obtained on macroscopic areas of NiB and glass resulting from patterning NiB as presented in the example. The high level of control over the etch chemistry in this example leads to a glass surface free of metal (Cu, Ni , Pd/Sn), whereas the Ni part of the sample is free of Cu and covered with a thin nickel oxide layer. Electroless deposition of a metal onto a substrate is a method that must be established in all its details for each case. Beyond the above-mentioned examples, the invention can be extended to:
several types of substrates (different types of glass, ceramics, oxidized surfaces, Si/Si02, indium-tin-oxide, indium-zirconium-oxide, tantalum oxide, aluminum oxide, etc . )
several types of electroless-deposited first metal layers, e.g., Ni, NiB, NiP, NiWP, Co, CoWP, CoP, Pd, etc.
several types of electroplated masks, e.g., Au, Cu, and Ag
alkanethiols showing selective protection for the mask and which are compatible with PDMS micropatterned stamps.

Claims

C L A I M S
1. Method for manufacturing a patterned metal layer on a substrate, said method comprising the steps of:
a) preconditioning said substrate by grafting an organic layer on said substrate; b) depositing a catalyst layer on said preconditioned substrate; c) depositing a metal layer on said catalyst layer by electroless deposition techniques; d) depositing a sacrificial mask on said metal layer; e) depositing a patterned etch-protection layer on said sacrificial mask using microcontact printing; f) etching away said sacrificial mask in the free areas of said patterned etch-protection layer; and g) etching away said electroless deposited metal layer in the areas free of said sacrificial layer.
2. Method according to claim 1, characterized in that it additionally comprises the step of activating said catalyst layer for electroless deposition after step b) .
3. Method according to claim 1 or 2 , characterized in that it additionally comprises the step of etching away the remainder of said sacrificial layer.
4. Method according to any one of claims 1 to 3 , characterized in that it additionally comprises the step of etching away said grafted organic layer and said catalyst layer.
5. Method according to any one of the preceding claims, characterized in that said organic layer is
N- (2-aminoethyl) -3-aminopropyltri-methoxysilane (EDA) .
6. Method according to any one of the preceding claims, characterized in that said step of depositing said catalyst layer is accomplished by immersing said substrate into a solution containing catalytic particles.
7. Method according to claim 6, characterized in that said catalytic particles comprise Pd/Sn.
8. Method according to claim 2, characterized in that said activating step is accomplished by immersing said substrate into an accelerator solution.
9. Method according to claim 8, characterized in that said accelerator solution comprises HBF4.
10. Method according to any one of the preceding claims, characterized in that said sacrificial mask comprises copper.
11. Method according to claim 10, characterized in that said sacrificial mask is deposited by electroplating.
12. Method according to any one of the preceding claims, characterized in that said etch-protection layer is applied by printing a self-assembled monolayer (SAM) of eicosanethiol by means of a micropatterned stamp.
13. Method according to claim 12, characterized in that said micropatterned stamp is a poly (dimethylsiloxane) (PDMS) stam .
14. Method according to any one of the preceding claims, characterized in that said step of etching away said sacrificial mask is done with a KCN/oxygen based etching bath.
15. Method according to any one of the preceding claims, characterized in that said step of etching away said metal layer is done with an aqueous solution of H2S04.
16. Method according to claim 3, characterized in that said step of etching away the remainder of said sacrificial layer is done with KCN.
17. Method according to claim 4, characterized in that said step of etching away said organic layer and said catalyst layer is done with an aqueous mixture of KOH and H202.
18. Method according to any one of the preceding claims, characterized in that said substrate is selected from the group consisting of glass, ceramics, oxidized surfaces, Si/Si02, and the like.
19. Method according to any one of the preceding claims, characterized in that said electroless deposited metal layer is selected from the group consisting of Ni, NiB, NiP, NiWP, Co, CoWP, CoP, Pd, and the like.
20. Method according to claim 19, characterized in that said metal layer deposited on said catalyst layer comprises an alloy of Ni and B.
21. Method according to any one of the preceding claims, characterized in that said second metal layer is selected from the group consisting of Au, Cu and Ag .
22. Method according to any one of the preceding claims, characterized in that said micropatterned stamp is inked with an alkanethiol.
23. Method according to claim 22, characterized in that said alkanethiol is eicosanethiol.
24. Method according to any one of the preceding claims, characterized in that said etch of said sacrificial mask is performed by etchants being selective for said mask.
25. Method according to any one of the preceding claims, characterized in that said metal layer is etched using any etch chemistry being selective for said sacrificial mask.
26. Method according to any one of the preceding claims, characterized in that a cathode frame is used to electroplate said sacrificial mask.
27. Method according to claim 26, characterized in that said frame contacts said metal layer on all its periphery.
PCT/IB2002/001225 2001-05-15 2002-04-04 Method for electroless deposition and patterning of a metal on a substrate WO2002093991A1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
KR10-2003-7013492A KR100532515B1 (en) 2001-05-15 2002-04-04 Method for electroless deposition and patterning of a metal on a substrate
JP2002590724A JP3808037B2 (en) 2001-05-15 2002-04-04 Method for electroless deposition and patterning of metal on a substrate

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP01810480.2 2001-05-15
EP01810480 2001-05-15

Publications (1)

Publication Number Publication Date
WO2002093991A1 true WO2002093991A1 (en) 2002-11-21

Family

ID=8183914

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/IB2002/001225 WO2002093991A1 (en) 2001-05-15 2002-04-04 Method for electroless deposition and patterning of a metal on a substrate

Country Status (4)

Country Link
JP (1) JP3808037B2 (en)
KR (1) KR100532515B1 (en)
TW (1) TW546670B (en)
WO (1) WO2002093991A1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2857780A1 (en) * 2003-07-18 2005-01-21 Commissariat Energie Atomique Manufacture of an anisotropic conductor film incorporating traversing inserts for direct connection with semiconductor chips for sensors and Micro-Electronic Mechanical Systems
WO2006049776A2 (en) * 2004-10-29 2006-05-11 Hewlett-Packard Development Company, L.P. Ink-jet printing of coupling agents for trace or circuit deposition templating

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007144026A1 (en) * 2006-06-16 2007-12-21 L'air Liquide Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Electroless nip adhesion and/or capping layer for copper interconnexion layer
JP2011517367A (en) * 2008-02-28 2011-06-02 スリーエム イノベイティブ プロパティズ カンパニー Method for patterning a conductor on a substrate
TWI594674B (en) * 2014-10-17 2017-08-01 綠點高新科技股份有限公司 A method of forming a patterned metal layer and an object with a patterned metal layer

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB811044A (en) * 1957-01-18 1959-03-25 Marconi Wireless Telegraph Co Improvements in or relating to the manufacture of designs in metal foil upon insulating backing sheets
EP0577187A1 (en) * 1992-06-29 1994-01-05 Koninklijke Philips Electronics N.V. Method of providing a metal pattern on glass in an electroless process
WO2000079023A1 (en) * 1999-06-18 2000-12-28 International Business Machines Corporation Method for printing a catalyst on substrates for electroless deposition

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB811044A (en) * 1957-01-18 1959-03-25 Marconi Wireless Telegraph Co Improvements in or relating to the manufacture of designs in metal foil upon insulating backing sheets
EP0577187A1 (en) * 1992-06-29 1994-01-05 Koninklijke Philips Electronics N.V. Method of providing a metal pattern on glass in an electroless process
WO2000079023A1 (en) * 1999-06-18 2000-12-28 International Business Machines Corporation Method for printing a catalyst on substrates for electroless deposition

Non-Patent Citations (5)

* Cited by examiner, † Cited by third party
Title
DELAMARCHE E ET AL.: "TRANSPORT MECHANISMS OF ALKANETHIOLS DURING MICROCONTACT PRINTING ON GOLD", JOURNAL OF PHYSICAL CHEMISTRY. B, MATERIALS, SURFACES, INTERFACES AND BIOPHYSICAL, vol. 102, 1998, WASHINGTON, DC, US, pages 3324 - 3334, XP001076858 *
HIDBER P C ET AL: "MICROCONTACT PRINTING OF PALLADIUM COLLOIDS: MICRON-SCALE PATTERNING BY ELECTROLESS DEPOSITION OF COPPER", LANGMUIR, AMERICAN CHEMICAL SOCIETY, NEW YORK, NY, US, vol. 12, no. 5, 6 March 1996 (1996-03-06), pages 1375 - 1380, XP000674508, ISSN: 0743-7463 *
XIA Y ET AL: "MICROCONTACT PRINTING WITH A CYLINDRICAL ROLLING STAMP: A PRACTICAL STEP TOWARD AUTOMATIC MANUFACTURING OF PATTERNS WITH SUBMICROMETER-SIZED FEATURES", ADVANCED MATERIALS, VCH VERLAGSGESELLSCHAFT, WEINHEIM, DE, vol. 8, no. 12, 1 December 1996 (1996-12-01), pages 1015 - 1017, XP000637940, ISSN: 0935-9648 *
XIA Y ET AL: "Pattern transfer: Self-assembled monolayers as ultrathin resists", MICROELECTRONIC ENGINEERING, ELSEVIER PUBLISHERS BV., AMSTERDAM, NL, vol. 32, no. 1, 1 September 1996 (1996-09-01), pages 255 - 268, XP004013438, ISSN: 0167-9317 *
XIA Y ET AL: "Use of electroless silver as the substrate in microcontact printing of alkanethiols and its application in microfabrication", LANGMUIR;LANGMUIR JAN 20 1998 ACS, WASHINGTON, DC, USA, vol. 14, no. 2, 20 January 1998 (1998-01-20), pages 363 - 371, XP002201958 *

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2857780A1 (en) * 2003-07-18 2005-01-21 Commissariat Energie Atomique Manufacture of an anisotropic conductor film incorporating traversing inserts for direct connection with semiconductor chips for sensors and Micro-Electronic Mechanical Systems
WO2005010926A2 (en) * 2003-07-18 2005-02-03 Commissariat A L'energie Atomique Procede de fabrication de film conducteur anisotrope
WO2005010926A3 (en) * 2003-07-18 2005-09-09 Commissariat Energie Atomique Procede de fabrication de film conducteur anisotrope
US7510962B2 (en) 2003-07-18 2009-03-31 Commissariat A L'energie Atomique Method for producing an anisotropic conductive film on a substrate
WO2006049776A2 (en) * 2004-10-29 2006-05-11 Hewlett-Packard Development Company, L.P. Ink-jet printing of coupling agents for trace or circuit deposition templating
WO2006049776A3 (en) * 2004-10-29 2006-07-13 Hewlett Packard Development Co Ink-jet printing of coupling agents for trace or circuit deposition templating

Also Published As

Publication number Publication date
JP2004527133A (en) 2004-09-02
KR100532515B1 (en) 2005-12-01
TW546670B (en) 2003-08-11
KR20030094350A (en) 2003-12-11
JP3808037B2 (en) 2006-08-09

Similar Documents

Publication Publication Date Title
US6521285B1 (en) Method for printing a catalyst on substrates for electroless deposition
US5380560A (en) Palladium sulfate solution for the selective seeding of the metal interconnections on polyimide dielectrics for electroless metal deposition
JP3503546B2 (en) Method of forming metal pattern
EP0884934A2 (en) Substrate and method for producing it
JPH07188936A (en) Production of metallic pattern on electrical insulation substrate in electroless process
US20050118436A1 (en) Method for electroless deposition of a metal layer on selected portions of a substrate
KR20050061285A (en) Method of preparing metal pattern having low resistivity
JP4628914B2 (en) Circuit pattern forming method
JP3808037B2 (en) Method for electroless deposition and patterning of metal on a substrate
KR20030095688A (en) Printed circuit board and plating method thereof
US20050148174A1 (en) Contact-connection of nanotubes
US7989029B1 (en) Reduced porosity copper deposition
JP2003082469A (en) Metallic film pattern forming method
TW200901293A (en) Improved method for producing a copper layer on a substrate in a flat panel display manufacturing process
TWI375278B (en) Method of enabling selective area plating on a substrate
JP2005051151A (en) Manufacturing method for conductive layer, substrate with conductive layer and electronic device
JPH11330652A (en) Board and manufacture thereof
JP2006057167A (en) Method for forming wiring by plating
JP2006265717A (en) Method for producing structure
O'Sullivan Electroless Deposition in Microelectronics: New Trend
US5246732A (en) Method of providing a copper pattern on a dielectric substrate
JP2005507462A (en) High resolution patterning method
KR100406592B1 (en) Fabricating method of Semiconductor Matal film
KR20080055983A (en) Catalyst treatment methdo, electroless plating method, and method for formation of circuit by using the electroless plating method
TWI385267B (en) Method of fabricating patterned metal oxide layer

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A1

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NO NZ OM PH PL PT RO RU SD SE SG SI SK SL TJ TM TN TR TT TZ UA UG US UZ VN YU ZA ZM ZW

AL Designated countries for regional patents

Kind code of ref document: A1

Designated state(s): GH GM KE LS MW MZ SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
WWE Wipo information: entry into national phase

Ref document number: 1020037013492

Country of ref document: KR

WWE Wipo information: entry into national phase

Ref document number: 2002590724

Country of ref document: JP

REG Reference to national code

Ref country code: DE

Ref legal event code: 8642

122 Ep: pct application non-entry in european phase