WO2002090243A2 - Plaquette epaisse prise en sandwich pour la fabrication de systemes micro-electromecaniques - Google Patents

Plaquette epaisse prise en sandwich pour la fabrication de systemes micro-electromecaniques Download PDF

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Publication number
WO2002090243A2
WO2002090243A2 PCT/GB2002/002009 GB0202009W WO02090243A2 WO 2002090243 A2 WO2002090243 A2 WO 2002090243A2 GB 0202009 W GB0202009 W GB 0202009W WO 02090243 A2 WO02090243 A2 WO 02090243A2
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Prior art keywords
component
substrate
layer
wafer
plane
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PCT/GB2002/002009
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English (en)
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WO2002090243A3 (fr
Inventor
Paul Blaire
Jean Podlecki
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Alcatel Optronics Uk Limited
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Publication of WO2002090243A2 publication Critical patent/WO2002090243A2/fr
Publication of WO2002090243A3 publication Critical patent/WO2002090243A3/fr

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
    • B81C1/00142—Bridges
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0035—Constitution or structural means for controlling the movement of the flexible or deformable elements
    • B81B3/004—Angular deflection
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
    • G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
    • G02B26/0816—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements
    • G02B26/0833—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD
    • G02B26/0841—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD the reflecting element being moved or deformed by electrostatic means
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/04—Optical MEMS
    • B81B2201/042—Micromirrors, not used as optical switches
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0102—Surface micromachining
    • B81C2201/0104—Chemical-mechanical polishing [CMP]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0102—Surface micromachining
    • B81C2201/0105—Sacrificial layer
    • B81C2201/0109—Sacrificial layers not provided for in B81C2201/0107 - B81C2201/0108
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0174—Manufacture or treatment of microstructural devices or systems in or on a substrate for making multi-layered devices, film deposition or growing
    • B81C2201/019—Bonding or gluing multiple substrate layers

Definitions

  • the present invention relates to the field of micro machined devices, also often referred to as micro-electro-mechanical systems (MEMS). More specifically, though not exclusively, the invention relates to an improved technique for fabricating MEMS devices which require large tilt, or displacement of components in a generally vertical direction, relative to the wafer in which they are fabricated.
  • MEMS micro-electro-mechanical systems
  • MEMS Micro-optical Electro-Mechanical or MOEMS devices
  • MOEMS Micro-optical Electro-Mechanical
  • MEMS and MEMS devices which incorporate optical components
  • MEMS as used hereinafter is intended to also include MOEMS.
  • Various techniques are known for fabricating MEMS devices incorporating various mechanical and/or optical components, including movable and/or rotatable components.
  • the gap between the moving components of a MEMS device and the underlying substrate is. an important parameter in MEMS design as it governs the vertical movement range of the movable MEMS component when that vertical movement is in any way towards the substrate, e.g. displacement into the substrate and particularly tilt.
  • An example of the former might be a beam that is required to flex substantially into the body of the substrate.
  • Another example is a membrane that deflects into the substrate.
  • Tilt is an important aspect in MEMS devices where large (> 500 ⁇ m diameter) optical components such as lenses, mirrors, etc. are required to have moderate angular tilt ranges. Alternatively these may be small ( ⁇ 500 ⁇ m diameter) optical components required to have large angular tilt ranges.
  • Either could be employed within, for example, a free space optical system such as an optical cross connect or optical scanner where large angular ranges are vital to ensure that an optical beam can be displaced or scanned over a large area where the dimensions of the scan area are greater then the separation between the scan area and the MEMS device.
  • a free space optical system such as an optical cross connect or optical scanner where large angular ranges are vital to ensure that an optical beam can be displaced or scanned over a large area where the dimensions of the scan area are greater then the separation between the scan area and the MEMS device.
  • the MEMS structures are built using a succession of deposited and patterned "structural" layers and "sacrificial” layers.
  • the structural layers are made of deposited poly crystalline material, usually polysilicon (polySi) or thin metal layers.
  • the sacrificial layers are typically boron phosphosilicate glass which is a form of doped silicon oxide (Si0 2 ).
  • fabrication methods that employ the removal of sacrificial layers the air gap between the released moving components and substrate of a MEMS device is very small due to the. typically thin sacrificial layer available.
  • the graph of Fig.2 illustrates graphically the amount of tilt (in degrees) which is available for tiltable, generally planar, micro-components, such as micro- mirrors, for different air gap thicknesses between the tiltable component and the silicon substrate in which the micro-component is fabricated (the thickness of the air gap is determined by the thickness of the sacrificial oxide layer used).
  • the different plot lines are for the four different component diameters indicated. It can be seen from the graph that the larger the diameter the larger the tilt required, and therefore the larger the air gap required.
  • the tilt angle is restricted to ⁇ ⁇ 2° for component diameters of > 115 ⁇ m. Induced stress in the deposited layers, leading to cracking and peeling of the layers, limit the thickness to typically 1 - 2 ⁇ m.
  • the MEMS structures are bulk-micro machined (i.e. substantially deeper etch depths than for surface micro-machining) using partial etches through both sides of the wafer, typically mono-crystalline silicon (Si), which is then fixed (anodic bonding or glued) onto another bulk-micro machined wafer which incorporates other actuation mechanisms, e.g. the electrodes.
  • a sacrificial layer is not employed to fabricate the MEMS device and consequentially large gaps between the moving components of a MEMS device and the underlying substrate are achieved.
  • An accurate realisation of the structural properties of the MEMS component is critical for precise and controlled actuation.
  • the removal of the sacrificial etch layer from the process also serves to remove an etch stop layer thus the process must rely on in-situ etch depth measurement.
  • the deposition techniques of surface micro-machining lead to considerably more accurate component realisation.
  • the post fabrication assembly step of surface micro-machining is comparable in this case with an assembly step that requires two micro-machined wafers to be fixed together either by, e.g., anodic bonding or simply gluing. This is a wafer scale process requiring precise alignment as again the accurate realisation of the structural properties of the MEMS component is critical for precise and controlled actuation.
  • the fabrication principal is surface micro-machining but this technique uses a commercially available silicon-on-insulator (SOI) wafer as illustrated in Fig.l
  • SOI silicon-on-insulator
  • the wafer is formed of a silicon substrate 1 with a thin sacrificial layer 2 of Si ⁇ 2 on top and a further layer 3 of Si on top of the Si0 2 layer.
  • the current SOI manufacture process is limited by (wet) thermal growth process for Si0 2 which is governed through a square law relationship, such that the grown thickness is proportional to the square root of the growth time. While a 2 ⁇ m layer may be grown in approximately 9 hours, a layer thickness of 10 to 30 ⁇ m would require approx.8 to 62 days during which time it will be understood the deposition system must be run continuously.
  • a MEMS structure 4 (for example a planar mirror) can be realized in the upper Si layer.
  • the thin Si0 2 layer 2 provides only a very small air gap (when the unwanted portions of the sacrificial layer are etched away) of thickness Wj between the released component and the silicon substrate when contacts are realised in the underlying substrate.
  • the air gap will not be thick enough to allow any significant tilt of the structure (about axis 5).
  • SOI surface micro-machining can be combined with bulk machining in that an additional wafer contacting the actuator means can be bonded on either side of the SOI wafer.
  • this approach carries with it the same disadvantages already discussed above.
  • a method of fabricating a micro-electro-mechanical device comprising: providing a substrate; depositing a sacrificial layer of material which is at least 20 ⁇ m thick on top of the substrate; depositing a component layer of material on top of the sacrificial layer; and fabricating in the component layer at least one component which requires to be rotated and/or displaced relative to the substrate.
  • the sacrificial layer of material may advantageously be at least 30 ⁇ m thick.
  • the at least one component may be a substantially planar component, for example a mirror, which requires to be rotated from a first plane generally parallel to the plane of the substrate to a second plane at an angle to the plane of the substrate.
  • the at least one component may, for example, be a membrane or a cantilever which requires to be displaced in a direction generally perpendicular to the substrate, or with at least a component of motion perpendicular to the substrate.
  • this displacement may take the form of a movement of the whole component, or only a portion of the component.
  • the component may require to be flexed toward or away from the substrate (e.g. where the component is a membrane or cantilever beam).
  • the component layer is preferably made of a single crystalline material, preferably silicon. Alternatively, though less preferably, the component layer may be made of a porycrystalline material, for example polysilicon.
  • the sacrificial layer is preferably made of silicon dioxide (Si0 2 ).
  • the substrate is preferably made of silicon.
  • MEM device of the invention is that relatively large structures requiring relatively large vertical displacement can now be achieved, since the thickness of the sacrificial layer allows the provision of a sufficiently large air gap between the component and the silicon substrate for the required rotation/tilt/displacement to be achieved.
  • the inventive device also has a higher packing density than the above-described MEMS devices in which the rotatable component is raised above the plane of the upper component layer.
  • good quality components for example optical components such as mirrors, can be formed in the component layer (as compared with prior art devices in which the component layer is made of polysilicon).
  • Actuator means may conveniently be provided through back vias (also sometimes known as
  • wafer feedthroughs ensuring a uniform electrode-actuator gap separation
  • a method of fabricating a micro-electro-mechanical device comprising: forming a first wafer structure by depositing a sacrificial layer which is at least lO ⁇ m thick on top of a substrate; forming a second wafer structure substantially identical to the first wafer structure; bonding the first and second wafer structures together, with the sacrificial layers adjacent one another so as to form a composite wafer comprising a lower substrate, a combined sacrificial layer having a thickness >of at least 20 ⁇ m, and an upper component layer; and fabricating in the upper component layer at least one component which requires to be rotated and/or displaced relative to the lower substrate.
  • the sacrificial layer of each of the first and second wafers is preferably made of Si0 2 and the substrate of each of the first and second wafers is preferably made of silicon.
  • This latter method has the advantage of reducing the growing time to grow the thick sacrificial layer e.g. two Si0 2 layers of thickness lO ⁇ m can be grown together in the same time as one Si0 2 layer of thickness 20 ⁇ m.
  • the method according to either the first or second above-described aspects of the invention may further include fabricating actuator means in the device, preferably in the substrate, and using the actuator means to displace the at least one component and/or rotating it from a first plane to a second plane.
  • each said Si0 2 layer is formed using a Flame Hydrolysis Deposition (FHD) process.
  • FHD allows the growth of the required thickness of Si0 2 layer to be achieved in a much shorter period (generally between one to two orders of magnitude faster) than with traditional techniques for manufacturing SOI wafers, such as thermal growth (wet or dry oxidation techniques) or other deposition techniques such as Chemical Vapour Deposition (CVD).
  • thermal growth wet or dry oxidation techniques
  • CVD Chemical Vapour Deposition
  • wet oxidation of Si to form a layer of Si0 2 10 to 30 ⁇ m thick would take approx. 8 to 62 days
  • FHD deposition and consolidation for a layer thickness of 10 to 30 ⁇ m would only take approx. 13 to 14 hours (approx. 12 hours of which is the consolidation time, which is effectively independent of layer thickness).
  • Fig.3 shows the time which would be required (in days) using thermal oxidation to achieve the Si0 2 thickness required for increasing tilt angle, for four different mirror diameters. Also as oxidation growth occurs on the whole wafer a polishing step is required to remove the Si0 on one side of the wafer, unlike FHD deposition. Nevertheless, such other growth methods may be used if desired.
  • a micro- electro-mechanical device comprising a wafer formed of a substrate on top of which is a sacrificial layer which is at least 20 ⁇ m thick, and an upper component layer on top of the sacrificial layer, and wherein fabricated in the upper component layer is at least one, preferably substantially planar, component which is rotatable and/or displaceable relative to the substrate.
  • the at least one component may be rotatable from a first plane generally parallel to the plane of the substrate to a second plane disposed at an angle to the plane of the silicon substrate.
  • the component may be displaceable in a direction substantially perpendicular to the substrate, or with at least a component of displacement perpendicular to the substrate.
  • the upper component layer is preferably silicon, the sacrificial layer is preferably SiO 2 and the substrate is preferably silicon.
  • the rotatable component may be permanently fixed in place after it has been tilted, prior to the MEMS device being used, or more commonly the component is tilted back and forward throughout operational use of the MEMs device e.g. in order to on/off switch a signal.
  • the at least one component fabricated in the upper component layer may be a mirror.
  • the mirror has a relatively large diameter, preferably in the range of 500-1000 ⁇ m.
  • the mirror can be tilted at an angle of at least 5 to 10 degrees to the silicon substrate.
  • Figure 3 shows the time required (in days) using thermal oxidation to achieve the required depth of Si0 2 to allow this tilt range.
  • the device further includes actuator means, most preferably electrostatic actuator means, fabricated in the wafer, most conveniently in the substrate, for actuating the at least one component to rotate it from the first to the second plane, or to displace the component generally vertically (e.g. by causing the component to flex).
  • Fig.l is a schematic cross-sectional view of a conventional SOI wafer
  • Fig.2 is a graph illustrating the amount of tilt available for increasing gap thickness between a micro-component and the substrate of an SOI wafer in which the component is formed, the different plot lines representing four different component diameters;
  • Fig.3 is a graph illustrating the time which would be required to grow, using thermal oxidation, an Si0 2 layer thick enough to allow a desired maximum tilt angle for four different diameters of a tiltable mirror component;
  • Fig.4 is a schematic cross-sectional view of a new SOI wafer having a thick oxide layer;
  • Fig.5 is a schematic cross-sectional view of a MEMS device fabricated in the SOI wafer of Fig.3, according to one embodiment of the invention
  • Fig.6 shows the MEMS device of Fig.4 rotated from the generally horizontal plane in which it is shown in Fig.3, to its final angled orientation
  • Figs.7(a) to (h) are cross-sectional views illustrating the process steps necessary to fabricate a MEMS device like that of Figs.4 to 6
  • Fig.8 is a flow diagram of the process steps illustrated in Fig.7
  • Fig.9 is a schematic cross-sectional view of a new SOI wafer for fabricating a MEMS device in, according to an alternative embodiment of the invention
  • Fig.10 is a schematic plan view of a flip-chip assembled MEMS device containing an array of four micro-mirrors
  • Fig.11 is a schematic side view of the device of Fig.7, showing only two of the electrical connections.
  • Fig.4 illustrates an improved SOI wafer 10 in which a tiltable mirror component is to be micro machined.
  • This wafer 10 is formed from two identical separate wafers 11,12 which are bonded together prior to the micro machining operation.
  • Each separate wafer 11,12 consists of a silicon substrate 14 which is approximately microns to hundreds of microns thick, and an Si0 2 layer 15 deposited thereon which is at least lO ⁇ m thick.
  • the Si0 2 layer is deposited by FHD, or alternatively by (wet) thermal oxidation (although the latter will take much longer).
  • FHD is that the FHD process can deposit an Si0 2 layer at a rate which is typically between one to two orders of magnitude faster than by using thermal oxidation.
  • the upper surfaces of the Si0 2 layers of each separate wafer 11,12 are bonded together, for example by anodic bonding, thereby forming the SOI wafer of Fig.4, having an Si0 2 layer at least 20 ⁇ m thick, a silicon substrate 16 and an upper silicon layer 17.
  • a tiltable mirror component 20 can then be machined in the upper silicon layer 17 using conventional MEMS micro machining technology, with sacrificial etching of the Si0 2 layer.
  • Fig.5 shows the fabricated mirror component once the unwanted areas of sacrificial oxide layer have been etched away (to release the mirror).
  • the mirror tilts about an axis 25 which lies in the upper silicon layer.
  • the mirror 20 has a relatively large diameter of about 250-750 ⁇ m, and can be rotated to its desired final position at an angle of, for example, about 14 to 5 degrees respectively assuming a 30 ⁇ m thick Si0 2 layer (see Fig.2), relative to the substrate 16, using electrostatic actuation means 22a,22b formed in the wafer substrate.
  • the electrostatic actuator comprises a pair of buried electrodes 22a,22b in the substrate 16.
  • the electrodes are formed in the substrate (in conventional manner well-known to those skilled in the MEMS art) by etching into the back of the substrate and depositing a conductive layer that forms the electrodes under the movable component and leads out to also form the contact points for later bonding.
  • Respective contact pads 21a,21b are provided on the exposed lower face of the electrodes 22a,22b, for electronic control of the actuator (by applying appropriate voltages thereto) so as to tilt the mirror 20 either down towards the left-hand one 22a of the electrodes (see Fig. 6), or down towards a right-hand one 22b of the electrodes.
  • the mirror 20 is earthed.
  • a 30 ⁇ m air gap between the mirror (in its original plane) and the silicon substrate allows for a tilt of about ⁇ 7° for a 500 ⁇ m diameter mirror 20.
  • the tilt angle available for this and other mirror diameters at this and other air gap thicknesses are readily apparent from Fig.2.
  • a gap size of at least 20 ⁇ m will allow a minimum tilt angle of 5 to 2 degrees for mirrors (or other components) of 500 to lOOO ⁇ m diameter respectively.
  • Figs.7(a)&(b) Deposit (preferably by FHD) the required Si0 2 layer 15 on each of the two Si wafers 11,12 (which will be the upper and lower wafers);
  • Fig.7(c ) Bond the Si0 2 layers of the two wafers together, and polish the upper Si layer 17 to a desired thickness, to obtain the desired Si0 2 on
  • Fig.7(d) Etch into the lower Si substrate using the Si0 2 as the etch stop, and back fill the etch hole(s) (or conformal coat the hole walls) with conductor, doped polysilicon for example, to form the electrodes 22a,22b;
  • the wafer 10 would be flip-chip assembled to the upper side of a board 30 (see Figs.10 and 11), with the contact pads 21 connected to corresponding contacts 32 accessible on the upper side of the board 30, and any electrical connections 34 on the upper component layer of the wafer 20 (such connections may for example be required to earth the movable structures: multiple connections are likely as each component would be electrically isolated and therefore require an earth) being connected to respective electrical connections 36 also accessible on the upper side of the board 30.
  • an array of substantially identical mirrors 20 is formed in the new "thick oxide layer" SOI wafer according to the invention. Only four mirrors are shown in Fig.10, but it will be appreciated that arrays of up to approximately 8x8 mirrors, and ultimately much larger arrays, will be generally desirable for switching applications.
  • some optical crossconnect switches may comprise a 500 x 500 matrix array of mirrors, or even a 1000 x 1000 matrix array. It will be appreciated that for such large crossconnects in order to minimize insertion loss due to diffraction losses, much larger mirror diameters are required than in smaller arrays.
  • the optical signal beam diameter will generally be in the range of 300-500 ⁇ m in which case a mirror diameter greater than 500 ⁇ m is generally required. If smaller diameter, more collimated signal beams were used there would be much larger diffraction losses and thus larger insertion loss.
  • an oxide layer thickness of about lOO ⁇ m may be required, in order to enable large enough mirrors to be used, and for these mirrors to be able to be tilted by a sufficiently large angle to perform the desired switching operations.
  • the larger the size of the crossconnect matrix the larger the mirror diameter required, and thus the greater the thickness of oxide layer required.
  • the SOI wafer 10 may be formed as a single wafer, by depositing an Si0 2 layer of at least 20 ⁇ m thickness onto a silicon substrate and then depositing the upper layer of silicon thereon.
  • Such an SOI wafer is illustrated in Fig. 9.
  • the disadvantage of this embodiment, as compared with the composite wafer of Fig. 4, is the increased time it will take to deposit a 20 ⁇ m oxide layer on one silicon substrate, as compared with a lO ⁇ m layer on each of two silicon substrates.
  • the actuator could be fabricated in a separate wafer to that of the mirror, although the benefits of an integrated actuator are then no longer available.

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Micromachines (AREA)
  • Mechanical Light Control Or Optical Switches (AREA)

Abstract

L'invention porte sur un procédé de fabrication amélioré de dispositifs à systèmes micro-électromécaniques constitués de composants relativement grands tels que des micro-miroirs de grand diamètre qui nécessitent d'être inclinés selon un angle par rapport à la surface de la plaquette, ou déplacés généralement verticalement. Selon une réalisation, on forme une plaquette SOI constituée d'une couche d'oxyde sacrificielle d'une épaisseur d'au moins 20 νm. Ceci permet d'assurer un espace suffisant entre le substrat de la plaquette et un composant formé dans la couche supérieure de silicium de façon à pouvoir incliner ou déplacer un composant relativement grand sur une distance désirée par rapport au substrat de la plaquette. Il est possible de former la plaquette SOI en collant deux plaquettes SOI séparées. Le dispositif à systèmes micro-électromécaniques formé selon cette invention est également revendiqué.
PCT/GB2002/002009 2001-05-04 2002-05-02 Plaquette epaisse prise en sandwich pour la fabrication de systemes micro-electromecaniques WO2002090243A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB0110932.1 2001-05-04
GB0110932A GB2375185A (en) 2001-05-04 2001-05-04 Thick wafer for MEMS fabrication

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WO2002090243A3 WO2002090243A3 (fr) 2003-12-24

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110703428A (zh) * 2019-10-28 2020-01-17 京东方科技集团股份有限公司 调光镜及其制造方法、调光装置
CN113640983A (zh) * 2021-08-11 2021-11-12 李青云 一种防吸合平板式mems振镜

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GB2375185A (en) 2002-11-06
WO2002090243A3 (fr) 2003-12-24

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