WO2002084680A1 - Method for defining reference magnetizations in layer systems - Google Patents
Method for defining reference magnetizations in layer systems Download PDFInfo
- Publication number
- WO2002084680A1 WO2002084680A1 PCT/DE2002/001302 DE0201302W WO02084680A1 WO 2002084680 A1 WO2002084680 A1 WO 2002084680A1 DE 0201302 W DE0201302 W DE 0201302W WO 02084680 A1 WO02084680 A1 WO 02084680A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- layer
- hard
- resistor
- magnetic field
- cooled
- Prior art date
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/3218—Exchange coupling of magnetic films via an antiferromagnetic interface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
- H01F41/30—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE]
- H01F41/302—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE] for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F41/303—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE] for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices with exchange coupling adjustment of magnetic film pairs, e.g. interface modifications by reduction, oxidation
- H01F41/304—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE] for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices with exchange coupling adjustment of magnetic film pairs, e.g. interface modifications by reduction, oxidation using temporary decoupling, e.g. involving blocking, Néel or Curie temperature transitions by heat treatment in presence/absence of a magnetic field
Definitions
- the invention relates to the field of materials technology and relates to a method for defining reference magnetizations, which is used, for example, in components in magnetic sensors or spin electronics, such as e.g. could be used in GMR sensors or MRAM memory cells.
- armature layer can consist of a hard magnet, a natural or artificial antiferromagnet.
- the magnetization direction of the ferromagnetic layer is spatially fixed by the exchange coupling between the ferromagnet and the armature layer.
- This anchor layer itself must also be magnetically aligned. Depending on the material properties of the anchor layer, the following methods have been used to date:
- the object of the present invention is to provide a method for determining reference magnetizations in layer systems, the reference directions in terms of number and spatial direction being arbitrary.
- At least one hard and / or soft magnetic layer is produced by geometrically structuring a hard and / or soft magnetic layer and before or during or after a one- or multi-stage heat treatment and / or soft magnetic layer is brought into direct contact with at least one antiferromagnetic layer.
- the heat treatment is carried out with an increase in temperature at least up to above the coupling temperature.
- the layer system is then cooled.
- the layer system is advantageously cooled without applying a magnetic field, so that the demagnetized state or the remanent state is impressed as reference magnetization without being disturbed.
- the layers are advantageously produced with lateral dimensions in the micro and nanometer range and layer thicknesses in the nanometer range.
- a hard and / or soft magnetic layer is initially structured geometrically. This can be done using methods known from microelectronics, such as, for example, lithographic methods. This geometric structuring determines the shape, number and arrangement of these geometric elements in relation to one another. This process step has a significant influence on the direction of magnetization of the hard and / or soft magnetic layer, since the choice of the geometric shape according to the principle found by van den Berg determines the direction of magnetization within the respective shape. Domains form within a shape, the magnetization of which is aligned parallel to the nearest edge. Alternatively, the stray field interaction of neighboring elements can be used to form desired domain patterns.
- any number of reference directions and any number of different reference directions can thus be produced in one layer system by number, shape and / or arrangement with respect to one another.
- the heating above the coupling temperature means that the magnetization configurations can be set in the hard and / or soft magnetic layer that is free due to the temperature increase in accordance with the domain elements.
- the antiferromagnetic layer takes over the magnetization configuration of the hard and / or soft magnetic layer.
- the layer system thus has a uniform magnetization configuration.
- the hard and / or soft magnetic layer it is also possible for the hard and / or soft magnetic layer to be subjected to the heat treatment alone and to be applied to an antiferromagnetic layer only during or after cooling.
- the antiferromagnetic layer takes over the magnetization configuration of the hard and / or soft magnetic layer.
- the hard and / or soft magnetic layer is applied or can only be applied after the production of the antiferromagnetic layer, its structuring can take place, for example, by means of an interchangeable mask process or lithographically controlled ion etching.
- the magnetization of the antiferromagnet is not determined by an applied magnetic field, but by the magnetization of the exchange-coupled ferromagnetic layer.
- a magnetic field during the heat treatment can favor the setting of the pattern as described by van den Berg.
- a sufficiently strong DC magnetic field can specifically cause remanent magnetization states.
- Another advantage of the method according to the invention is that the domain patterns of the hard and / or soft magnetic layer are retained even at higher temperatures and thus the method with the Temperature treatment for generating an antiferromagnetic state, such as PtMn and similar substances, is compatible.
- the reference magnetizations established by the method according to the invention can be regenerated (self-healing). This can only be achieved by reheating the layer composite above the coupling temperature. Destroyed magnetizations above the coupling temperature are thus reset and can serve as reference magnetizations again after cooling.
- the method according to the invention can be used well in the miniaturization of magnetoelectronic components, since it can be used over a wide scaling range.
- a reliable determination of the reference magnetization can be achieved in particular in the submicron range.
- FIG. 1 shows a typical magnetization configuration of a ferromagnetic layer and an antiferromagnetic layer a) before a heat treatment b) at T> TB, with a TB coupling temperature c) after a heat treatment
- Fig. 2 is a nuclear microscope image of 4 ellipsoidally structured
- perpendicular reference magnetizations are required.
- a 10 nm thick FeMn layer is first deposited on silicon as an anchor layer and then a 100 nm thick ferromagnetic Ni ⁇ iFeig layer is deposited.
- squares with an edge length of 24 ⁇ m are structured.
- the ferromagnetic layer must be completely removed outside the structure.
- the heat treatment takes place at 200 ° C.
- the sample is demagnetized in a decaying magnetic field with a maximum amplitude of 1 kA / cm and then cooled to room temperature without the influence of a magnetic field.
- the layer system now shows a stable magnetization configuration as shown in Fig. 1.
- Magnetoresistive magnetic field sensors are advantageously implemented in a Wheatson bridge circuit.
- reference magnetizations that are antiparallel to each other are required.
- a double layer consisting of 10 nm FeMn and 100 nm Ni 8 ⁇ Fei 9 is dusted on a silicon substrate.
- a homogeneous magnetic field with a strength of 240 A / cm is present during the layer deposition.
- 4 elements of an ellipse-like shape with the lateral dimensions of 100 ⁇ m x 20 ⁇ m are structured. The elements are aligned parallel to each other and to the field direction during the layer deposition and are next to each other with a distance of 30 ⁇ m.
- the heat treatment takes place at 200 ° C.
- the sample is demagnetized in a decaying field of maximum amplitude of 1 kA / cm, which is aligned diagonally to the element axis and then cooled to room temperature without the influence of a magnetic field.
- the layer system now shows a stable magnetization configuration, as shown in Fig. 2.
Abstract
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002581537A JP2004523928A (en) | 2001-04-12 | 2002-04-05 | Method for determining reference magnetization in layered systems |
US10/473,593 US7060509B2 (en) | 2001-04-12 | 2002-04-05 | Method for defining reference magnetizations in layer systems |
EP02761865A EP1377993A1 (en) | 2001-04-12 | 2002-04-05 | Method for defining reference magnetizations in layer systems |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10119381 | 2001-04-12 | ||
DE10119381.5 | 2001-04-12 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2002084680A1 true WO2002084680A1 (en) | 2002-10-24 |
Family
ID=7682096
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/DE2002/001302 WO2002084680A1 (en) | 2001-04-12 | 2002-04-05 | Method for defining reference magnetizations in layer systems |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP1377993A1 (en) |
JP (1) | JP2004523928A (en) |
DE (1) | DE10215506A1 (en) |
WO (1) | WO2002084680A1 (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9529060B2 (en) | 2014-01-09 | 2016-12-27 | Allegro Microsystems, Llc | Magnetoresistance element with improved response to magnetic fields |
US9812637B2 (en) | 2015-06-05 | 2017-11-07 | Allegro Microsystems, Llc | Spin valve magnetoresistance element with improved response to magnetic fields |
US10620279B2 (en) | 2017-05-19 | 2020-04-14 | Allegro Microsystems, Llc | Magnetoresistance element with increased operational range |
US11022661B2 (en) | 2017-05-19 | 2021-06-01 | Allegro Microsystems, Llc | Magnetoresistance element with increased operational range |
US11719771B1 (en) | 2022-06-02 | 2023-08-08 | Allegro Microsystems, Llc | Magnetoresistive sensor having seed layer hysteresis suppression |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102004032483A1 (en) * | 2004-07-05 | 2006-01-26 | Infineon Technologies Ag | Production of localized magnetization in magnetic sensors used in angular measurement systems, whereby magnetization is achieved by local resistive heating above the blocking temperature and then application of an aligning field |
US7635974B2 (en) * | 2007-05-02 | 2009-12-22 | Magic Technologies, Inc. | Magnetic tunnel junction (MTJ) based magnetic field angle sensor |
DE102007040183A1 (en) * | 2007-08-25 | 2009-03-05 | Sensitec Naomi Gmbh | Magnetic field sensor, for external and especially terrestrial magnetic fields, has parallel magnetized strip layers with contacts for current/voltage for measurement signals from their output difference |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1074658A (en) * | 1996-06-28 | 1998-03-17 | Victor Co Of Japan Ltd | Manufacture of spin valve magnetoresistive effect device |
JPH11273034A (en) * | 1998-03-23 | 1999-10-08 | Tdk Corp | Magnetic sensor, thin-film magnetic head and production of thin-film magnetic head |
-
2002
- 2002-04-05 DE DE10215506A patent/DE10215506A1/en not_active Ceased
- 2002-04-05 WO PCT/DE2002/001302 patent/WO2002084680A1/en not_active Application Discontinuation
- 2002-04-05 EP EP02761865A patent/EP1377993A1/en not_active Withdrawn
- 2002-04-05 JP JP2002581537A patent/JP2004523928A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1074658A (en) * | 1996-06-28 | 1998-03-17 | Victor Co Of Japan Ltd | Manufacture of spin valve magnetoresistive effect device |
JPH11273034A (en) * | 1998-03-23 | 1999-10-08 | Tdk Corp | Magnetic sensor, thin-film magnetic head and production of thin-film magnetic head |
Non-Patent Citations (4)
Title |
---|
DATABASE INSPEC [online] INSTITUTE OF ELECTRICAL ENGINEERS, STEVENAGE, GB; TSUNODA M ET AL: "Reversible change of direction of the exchange anisotropy of polycrystalline ferromagnetic/antiferromagnetic bilayers by thermal annealing in magnetic field", XP002212605, Database accession no. 7006715 * |
JOURNAL OF THE MAGNETICS SOCIETY OF JAPAN, 2001, MAGNETICS SOCIETY OF JAPAN, JAPAN, vol. 25, no. 4, pt.2, pages 827 - 830, ISSN: 0285-0192 * |
PATENT ABSTRACTS OF JAPAN vol. 1998, no. 08 30 June 1998 (1998-06-30) * |
PATENT ABSTRACTS OF JAPAN vol. 2000, no. 01 31 January 2000 (2000-01-31) * |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9529060B2 (en) | 2014-01-09 | 2016-12-27 | Allegro Microsystems, Llc | Magnetoresistance element with improved response to magnetic fields |
US9804234B2 (en) | 2014-01-09 | 2017-10-31 | Allegro Microsystems, Llc | Magnetoresistance element with an improved seed layer to promote an improved response to magnetic fields |
US9922673B2 (en) | 2014-01-09 | 2018-03-20 | Allegro Microsystems, Llc | Magnetoresistance element with improved response to magnetic fields |
US10347277B2 (en) | 2014-01-09 | 2019-07-09 | Allegro Microsystems, Llc | Magnetoresistance element with improved response to magnetic fields |
US9812637B2 (en) | 2015-06-05 | 2017-11-07 | Allegro Microsystems, Llc | Spin valve magnetoresistance element with improved response to magnetic fields |
US10620279B2 (en) | 2017-05-19 | 2020-04-14 | Allegro Microsystems, Llc | Magnetoresistance element with increased operational range |
US11002807B2 (en) | 2017-05-19 | 2021-05-11 | Allegro Microsystems, Llc | Magnetoresistance element with increased operational range |
US11022661B2 (en) | 2017-05-19 | 2021-06-01 | Allegro Microsystems, Llc | Magnetoresistance element with increased operational range |
US11719771B1 (en) | 2022-06-02 | 2023-08-08 | Allegro Microsystems, Llc | Magnetoresistive sensor having seed layer hysteresis suppression |
Also Published As
Publication number | Publication date |
---|---|
JP2004523928A (en) | 2004-08-05 |
DE10215506A1 (en) | 2002-10-24 |
EP1377993A1 (en) | 2004-01-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE69130351T3 (en) | Method of making a GMR article | |
DE10028640B4 (en) | Wheatstone bridge, including bridge elements, consisting of a spin valve system, and a method for their production | |
DE60022616T2 (en) | Magnetic storage | |
DE102007034256A1 (en) | Reconfigurable magnetic logic circuitry and methods of making and operating such logic devices | |
DE102015121753B4 (en) | Magnetic sensor component and method for a magnetic sensor component with a magnetoresistive structure | |
DE102006008257B4 (en) | A spin valve-type magnetoresistive multi-layer system having a magnetically softer multi-layer electrode and the use thereof | |
WO2016078793A1 (en) | Method and apparatus for manufacturing a magnetic sensor device, and corresponding magnetic sensor device | |
WO2003017295A1 (en) | Layer system having an increased magnetoresistive effect and use of the same | |
DE10155423B4 (en) | Method for the homogeneous magnetization of an exchange-coupled layer system of a magneto-resistive component, in particular of a sensor or logic element | |
WO2000010178A1 (en) | Magnetoresistive element and the use thereof as storage element in a storage cell array | |
WO2002084680A1 (en) | Method for defining reference magnetizations in layer systems | |
DE10117355A1 (en) | Method for setting a magnetization in a layer arrangement and its use | |
WO2003083873A1 (en) | Method for producing a reference layer and an mram memory cell provided with said type of reference layer | |
EP3918356B1 (en) | Arrangement of adjacent layer structures for a magnetoresistive magnetic field sensor, magnetoresistive magnetic field sensor and method for producing same | |
EP1527351A1 (en) | Magnetoresistive layer system and sensor element comprising said layer system | |
US7060509B2 (en) | Method for defining reference magnetizations in layer systems | |
WO2003043036A1 (en) | Method for homogeneously magnetizing an exchange-coupled layer system of a digital magnetic memory location device | |
DE10106860A1 (en) | Magnetic Tunnel Junction element has third magnetic layer on opposite side of second magnetic layer from first forming closed magnetic circuit in common with second magnetic layer | |
EP1378950A1 (en) | Method for definition or local change of the magnetisation of a layer in a magnetoresistive multilayer,hot stamp for heating the magnetoresistive multilayer and its use | |
DE10251566A1 (en) | GMR magnetoresistive layer method of manufacture for use in manufacture of GMR storage components or a GMR sensor elements, according to the spin-valve principle, whereby two magnetization steps are applied | |
DE102019107689A1 (en) | Layer structure for a magnetoresistive magnetic field sensor, magnetoresistive magnetic field sensor and method for their production | |
AT412039B (en) | METHOD FOR TWO-DIMENSIONAL MANIPULATION OF SMALL VOLUMINAS OF LIQUIDS AND SOLIDS, AND ACTUATOR FOR IMPLEMENTING THE METHOD | |
DE102022128167A1 (en) | SPIN VALVE DEVICE AND METHOD OF FORMING A SPIN VALVE DEVICE | |
DE10325741B4 (en) | Magnetic layer system with high exchange bias field strength and method of manufacture | |
DE19908054C2 (en) | Uncoupled GMR sensor |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AK | Designated states |
Kind code of ref document: A1 Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BY BZ CA CH CN CO CR CU CZ DK DM DZ EC EE ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NO NZ OM PH PL PT RO RU SD SE SG SI SK SL TJ TM TN TR TT TZ UA UG US UZ VN YU ZA ZM ZW |
|
AL | Designated countries for regional patents |
Kind code of ref document: A1 Designated state(s): GH GM KE LS MW MZ SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
WWE | Wipo information: entry into national phase |
Ref document number: 2002761865 Country of ref document: EP |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2002581537 Country of ref document: JP |
|
WWE | Wipo information: entry into national phase |
Ref document number: 10473593 Country of ref document: US |
|
WWP | Wipo information: published in national office |
Ref document number: 2002761865 Country of ref document: EP |
|
WWW | Wipo information: withdrawn in national office |
Ref document number: 2002761865 Country of ref document: EP |