WO2002075817A3 - Improved schottky device - Google Patents

Improved schottky device Download PDF

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Publication number
WO2002075817A3
WO2002075817A3 PCT/US2002/008683 US0208683W WO02075817A3 WO 2002075817 A3 WO2002075817 A3 WO 2002075817A3 US 0208683 W US0208683 W US 0208683W WO 02075817 A3 WO02075817 A3 WO 02075817A3
Authority
WO
WIPO (PCT)
Prior art keywords
layer
resistivity layer
low
high resistivity
leakage current
Prior art date
Application number
PCT/US2002/008683
Other languages
French (fr)
Other versions
WO2002075817A2 (en
Inventor
Walter R Buchanan
Roman J Hamerski
Original Assignee
Fabtech Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fabtech Inc filed Critical Fabtech Inc
Publication of WO2002075817A2 publication Critical patent/WO2002075817A2/en
Publication of WO2002075817A3 publication Critical patent/WO2002075817A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/872—Schottky diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
    • H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

An improved Schottky device, having a low resistivity layer of semiconductor material, a high resistivity layer of semiconductor material and a buried dopant region positioned in the high resistivity layer utilized to reduce reverse leakage current. The low resistivity layer can be an N+ material while the high resistivity layer can be an N- layer. The buried dopant region can be of P+ material, thus forming a PN junction with an associated charge depletion zone in the N- layer and an associated low reverse leakage current. The location of the P+ material allows for a full Schottky barrier between the N- material and a barrier metal to be maintained, thus the device experiences a low forward voltage drop.
PCT/US2002/008683 2001-03-20 2002-03-20 Improved schottky device WO2002075817A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/812,738 US6462393B2 (en) 2001-03-20 2001-03-20 Schottky device
US09/812,738 2001-03-20

Publications (2)

Publication Number Publication Date
WO2002075817A2 WO2002075817A2 (en) 2002-09-26
WO2002075817A3 true WO2002075817A3 (en) 2002-12-12

Family

ID=25210479

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2002/008683 WO2002075817A2 (en) 2001-03-20 2002-03-20 Improved schottky device

Country Status (2)

Country Link
US (2) US6462393B2 (en)
WO (1) WO2002075817A2 (en)

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EP0693549A1 (en) 1994-07-19 1996-01-24 The Procter & Gamble Company Solid bleach activator compositions
FR2832547A1 (en) * 2001-11-21 2003-05-23 St Microelectronics Sa PROCESS FOR PRODUCING A SCHOTTKY DIODE ON A SILICON CARBIDE SUBSTRATE
US20030222272A1 (en) * 2002-05-30 2003-12-04 Hamerski Roman J. Semiconductor devices using minority carrier controlling substances
JP2004127968A (en) * 2002-09-30 2004-04-22 Sanyo Electric Co Ltd Semiconductor device and its fabricating method
US7262467B2 (en) * 2003-09-10 2007-08-28 Ixys Corporation Over charge protection device
US6949454B2 (en) * 2003-10-08 2005-09-27 Texas Instruments Incorporated Guard ring structure for a Schottky diode
JP2005243716A (en) * 2004-02-24 2005-09-08 Sanyo Electric Co Ltd Semiconductor device
US7238976B1 (en) * 2004-06-15 2007-07-03 Qspeed Semiconductor Inc. Schottky barrier rectifier and method of manufacturing the same
WO2007075996A2 (en) 2005-12-27 2007-07-05 Qspeed Semiconductor Inc. Apparatus and method for a fast recovery rectifier structure
US7851881B1 (en) 2008-03-21 2010-12-14 Microsemi Corporation Schottky barrier diode (SBD) and its off-shoot merged PN/Schottky diode or junction barrier Schottky (JBS) diode
EP2154726A3 (en) * 2008-08-14 2010-05-26 Acreo AB A method for producing a JBS diode
US20100258899A1 (en) * 2009-04-08 2010-10-14 Chih-Tsung Huang Schottky diode device with an extended guard ring and fabrication method thereof
WO2012054032A1 (en) 2010-10-20 2012-04-26 Microsemi Corporation Embedded wells merged pn/schottky diode
TWM410988U (en) * 2011-02-11 2011-09-01 Pynmax Technology Co Ltd Reducing positive ON voltage drop Schottky diode
TWM410989U (en) * 2011-02-11 2011-09-01 Pynmax Technology Co Ltd Low forward ON voltage drop Schottky diode
GB2489100A (en) 2011-03-16 2012-09-19 Validity Sensors Inc Wafer-level packaging for a fingerprint sensor
EP3038162B1 (en) * 2014-12-24 2019-09-04 ABB Schweiz AG Junction barrier Schottky rectifier
SE541291C2 (en) 2017-09-15 2019-06-11 Ascatron Ab Feeder design with high current capability

Citations (2)

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US4982260A (en) * 1989-10-02 1991-01-01 General Electric Company Power rectifier with trenches

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Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4646115A (en) * 1983-12-20 1987-02-24 U.S. Philips Corporation Semiconductor devices having field-relief regions
US4982260A (en) * 1989-10-02 1991-01-01 General Electric Company Power rectifier with trenches

Also Published As

Publication number Publication date
US6462393B2 (en) 2002-10-08
US20030006472A1 (en) 2003-01-09
WO2002075817A2 (en) 2002-09-26
US6710419B2 (en) 2004-03-23
US20020135038A1 (en) 2002-09-26

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