WO2002061505A1 - Mask, optical characteristic measuring method, exposure apparatus adjusting method and exposure method, and device manufacturing method - Google Patents

Mask, optical characteristic measuring method, exposure apparatus adjusting method and exposure method, and device manufacturing method Download PDF

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Publication number
WO2002061505A1
WO2002061505A1 PCT/JP2002/000782 JP0200782W WO02061505A1 WO 2002061505 A1 WO2002061505 A1 WO 2002061505A1 JP 0200782 W JP0200782 W JP 0200782W WO 02061505 A1 WO02061505 A1 WO 02061505A1
Authority
WO
WIPO (PCT)
Prior art keywords
exposure
projection
mask
optical system
optical characteristic
Prior art date
Application number
PCT/JP2002/000782
Other languages
French (fr)
Japanese (ja)
Inventor
Kengo Takemasa
Original Assignee
Nikon Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corporation filed Critical Nikon Corporation
Priority to JP2002562015A priority Critical patent/JPWO2002061505A1/en
Publication of WO2002061505A1 publication Critical patent/WO2002061505A1/en

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70591—Testing optical components
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Testing Of Optical Devices Or Fibers (AREA)

Abstract

First and second patterns are sequentially projected onto a projection object through a projection optical system while changing the position of the projection object with respect to the optical axis of the projection optical system by a predetermined step. The line width value corresponding to the line width of the image of each pattern is measured by using the electric resistance of the transferred pattern. An optical characteristic of the projection optical system is measured according to the correlation (curve A) between the line width value corresponding to the image of the first pattern and the position of the projection object with respect to the optical axis of the projection optical system and to the correlation (curve B) between the line width value corresponding to the image of the second pattern and the position of the projection object with respect to the optical axis of the projection optical system with.
PCT/JP2002/000782 2001-01-31 2002-01-31 Mask, optical characteristic measuring method, exposure apparatus adjusting method and exposure method, and device manufacturing method WO2002061505A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002562015A JPWO2002061505A1 (en) 2001-01-31 2002-01-31 Mask, optical property measurement method, exposure apparatus adjustment method and exposure method, and device manufacturing method

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2001024742 2001-01-31
JP2001-24742 2001-01-31
JP2001026523 2001-02-02
JP2001-26523 2001-02-02

Publications (1)

Publication Number Publication Date
WO2002061505A1 true WO2002061505A1 (en) 2002-08-08

Family

ID=26608715

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2002/000782 WO2002061505A1 (en) 2001-01-31 2002-01-31 Mask, optical characteristic measuring method, exposure apparatus adjusting method and exposure method, and device manufacturing method

Country Status (2)

Country Link
JP (1) JPWO2002061505A1 (en)
WO (1) WO2002061505A1 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004092865A2 (en) * 2003-04-17 2004-10-28 Nippon Kogaku Kk Selection method, exposure method, selection device, exposure device, and device manufacturing method
JP2006515067A (en) * 2003-03-17 2006-05-18 フィコム コーポレイション Probe positioning and bonding apparatus and probe bonding method
JP2006303498A (en) * 2005-04-15 2006-11-02 Samsung Electronics Co Ltd System and method for detecting focus variation in photolithography process using test feature printed from photomask test pattern image
JP2009031716A (en) * 2007-07-24 2009-02-12 Nanya Technology Corp Photomask layout pattern
JP2009295735A (en) * 2008-06-04 2009-12-17 Seiko Instruments Inc Method of manufacturing semiconductor device

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4908656A (en) * 1988-01-21 1990-03-13 Nikon Corporation Method of dimension measurement for a pattern formed by exposure apparatus, and method for setting exposure conditions and for inspecting exposure precision
JPH09270378A (en) * 1996-03-29 1997-10-14 Nittetsu Semiconductor Kk Photoreticle, semiconductor integrated circuit, and method for detecting incination of wafer during exposure
JPH09270379A (en) * 1996-04-01 1997-10-14 Miyazaki Oki Electric Co Ltd Reticle for focus estimation and focus estimation method
JPH10319598A (en) * 1997-05-21 1998-12-04 Sony Corp Resist pattern and its forming method
JPH11297614A (en) * 1998-04-09 1999-10-29 Nikon Corp Coma aberration measuring device and projection aligner provided with the device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4908656A (en) * 1988-01-21 1990-03-13 Nikon Corporation Method of dimension measurement for a pattern formed by exposure apparatus, and method for setting exposure conditions and for inspecting exposure precision
JPH09270378A (en) * 1996-03-29 1997-10-14 Nittetsu Semiconductor Kk Photoreticle, semiconductor integrated circuit, and method for detecting incination of wafer during exposure
JPH09270379A (en) * 1996-04-01 1997-10-14 Miyazaki Oki Electric Co Ltd Reticle for focus estimation and focus estimation method
JPH10319598A (en) * 1997-05-21 1998-12-04 Sony Corp Resist pattern and its forming method
JPH11297614A (en) * 1998-04-09 1999-10-29 Nikon Corp Coma aberration measuring device and projection aligner provided with the device

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006515067A (en) * 2003-03-17 2006-05-18 フィコム コーポレイション Probe positioning and bonding apparatus and probe bonding method
US7592565B2 (en) 2003-03-17 2009-09-22 Phicom Corporation Probe positioning and bonding device and probe bonding method
WO2004092865A2 (en) * 2003-04-17 2004-10-28 Nippon Kogaku Kk Selection method, exposure method, selection device, exposure device, and device manufacturing method
WO2004092865A3 (en) * 2003-04-17 2004-12-29 Nippon Kogaku Kk Selection method, exposure method, selection device, exposure device, and device manufacturing method
JP2006303498A (en) * 2005-04-15 2006-11-02 Samsung Electronics Co Ltd System and method for detecting focus variation in photolithography process using test feature printed from photomask test pattern image
JP2009031716A (en) * 2007-07-24 2009-02-12 Nanya Technology Corp Photomask layout pattern
JP4653797B2 (en) * 2007-07-24 2011-03-16 南亜科技股▲ふん▼有限公司 Photo mask layout pattern
JP2009295735A (en) * 2008-06-04 2009-12-17 Seiko Instruments Inc Method of manufacturing semiconductor device

Also Published As

Publication number Publication date
JPWO2002061505A1 (en) 2004-06-03

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