WO2002058200A3 - Quantum dot lasers - Google Patents

Quantum dot lasers Download PDF

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Publication number
WO2002058200A3
WO2002058200A3 PCT/US2001/031256 US0131256W WO02058200A3 WO 2002058200 A3 WO2002058200 A3 WO 2002058200A3 US 0131256 W US0131256 W US 0131256W WO 02058200 A3 WO02058200 A3 WO 02058200A3
Authority
WO
WIPO (PCT)
Prior art keywords
quantum
dot
quantum dot
optical gain
active region
Prior art date
Application number
PCT/US2001/031256
Other languages
French (fr)
Other versions
WO2002058200A2 (en
WO2002058200A9 (en
Inventor
Andreas Stintz
Petros N Varangis
Kevin J Malloy
Luke F Lester
Timothy C Newell
Hua Li
Original Assignee
Stc Unm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/961,560 external-priority patent/US6600169B2/en
Application filed by Stc Unm filed Critical Stc Unm
Priority to CA002423782A priority Critical patent/CA2423782A1/en
Priority to EP01994056A priority patent/EP1354380A2/en
Priority to AU2002246489A priority patent/AU2002246489A1/en
Priority to IL15502601A priority patent/IL155026A0/en
Priority to JP2002558378A priority patent/JP2004528705A/en
Publication of WO2002058200A2 publication Critical patent/WO2002058200A2/en
Priority to IL155026A priority patent/IL155026A/en
Publication of WO2002058200A9 publication Critical patent/WO2002058200A9/en
Publication of WO2002058200A3 publication Critical patent/WO2002058200A3/en

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1228—DFB lasers with a complex coupled grating, e.g. gain or loss coupling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
    • H01S5/143—Littman-Metcalf configuration, e.g. laser - grating - mirror
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/341—Structures having reduced dimensionality, e.g. quantum wires
    • H01S5/3412—Structures having reduced dimensionality, e.g. quantum wires quantum box or quantum dash
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4043—Edge-emitting structures with vertically stacked active layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Composite Materials (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Optics & Photonics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Semiconductor Lasers (AREA)

Abstract

A quantum dot active region is disclosed in which quantum dot layers are formed using a self-assembled growth technique. In one embodiment, growth parameters are selected to control the dot density and dot size distribution to achieve desired optical gain spectrum characteristics. In one embodiment, the distribution in dot size and the sequence of optical transition energy values associated with the quantum confined states of the dots are selected to facilitate forming a continuous optical gain spectrum over an extended wavelength range. In another embodiment, the optical gain is selected to increase the saturated ground state gain for wavelengths of 1260 nanometers and greater. In other embodiments, the quantum dots are used as the active region in laser devices, including tunable lasers and monolithic multi-wavelength laser arrays.
PCT/US2001/031256 2000-10-06 2001-10-05 Quantum dot lasers WO2002058200A2 (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
CA002423782A CA2423782A1 (en) 2000-10-06 2001-10-05 Quantum dot lasers
EP01994056A EP1354380A2 (en) 2000-10-06 2001-10-05 Quantum dot lasers
AU2002246489A AU2002246489A1 (en) 2000-10-06 2001-10-05 Quantum dot lasers
IL15502601A IL155026A0 (en) 2000-10-06 2001-10-05 Quantum dot lasers
JP2002558378A JP2004528705A (en) 2000-10-06 2001-10-05 Quantum dot laser
IL155026A IL155026A (en) 2000-10-06 2003-03-20 Quantum dot lasers

Applications Claiming Priority (12)

Application Number Priority Date Filing Date Title
US23803000P 2000-10-06 2000-10-06
US60/238,030 2000-10-06
US25208400P 2000-11-21 2000-11-21
US60/252,084 2000-11-21
US27230701P 2001-03-02 2001-03-02
US60/272,307 2001-03-02
US27618601P 2001-03-16 2001-03-16
US60/276,186 2001-03-16
US31630501P 2001-08-31 2001-08-31
US60/316,305 2001-08-31
US09/961,560 2001-09-20
US09/961,560 US6600169B2 (en) 2000-09-22 2001-09-20 Quantum dash device

Publications (3)

Publication Number Publication Date
WO2002058200A2 WO2002058200A2 (en) 2002-07-25
WO2002058200A9 WO2002058200A9 (en) 2003-05-30
WO2002058200A3 true WO2002058200A3 (en) 2003-08-14

Family

ID=27559279

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2001/031256 WO2002058200A2 (en) 2000-10-06 2001-10-05 Quantum dot lasers

Country Status (6)

Country Link
EP (1) EP1354380A2 (en)
JP (3) JP2004528705A (en)
AU (1) AU2002246489A1 (en)
CA (1) CA2423782A1 (en)
IL (2) IL155026A0 (en)
WO (1) WO2002058200A2 (en)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3692407B2 (en) * 2003-08-28 2005-09-07 国立大学法人 東京大学 Manufacturing method of semiconductor quantum dot device
CN100477289C (en) * 2004-01-20 2009-04-08 瑟雷姆技术公司 Solar cell with epitaxially grown quantum dot material
US9018515B2 (en) 2004-01-20 2015-04-28 Cyrium Technologies Incorporated Solar cell with epitaxially grown quantum dot material
JP4873527B2 (en) * 2004-08-26 2012-02-08 独立行政法人産業技術総合研究所 Manufacturing method of semiconductor light emitting device
JP4829508B2 (en) * 2005-02-18 2011-12-07 富士通株式会社 Manufacturing method of optical semiconductor device
JP2007123731A (en) * 2005-10-31 2007-05-17 Toshiba Corp Semiconductor light-emitting element and device thereof
TWI318815B (en) * 2006-12-20 2009-12-21 Ind Tech Res Inst Multiwavelength semiconductor laser array and method of manufacturing the same
JP5730484B2 (en) * 2007-01-26 2015-06-10 クリスタル アイエス インコーポレイテッド Thick pseudo-lattice matched nitride epitaxial layer
JP4750728B2 (en) * 2007-02-09 2011-08-17 富士通株式会社 Manufacturing method of semiconductor device
US8965208B2 (en) 2009-05-22 2015-02-24 Kotura, Inc. Multi-channel optical device
JP5672983B2 (en) * 2010-11-04 2015-02-18 富士通株式会社 Light emitting semiconductor device and method for manufacturing the same
JP2016523444A (en) * 2013-07-03 2016-08-08 インフェニックス インコーポレイテッドＩｎｐｈｅｎｉｘ， Ｉｎｃ． Wavelength tuned vertical cavity surface emitting laser for swept source coherence tomography system
JP6581419B2 (en) * 2015-07-30 2019-09-25 浜松ホトニクス株式会社 Distributed feedback lateral multimode semiconductor laser device
JP7265258B2 (en) * 2019-07-30 2023-04-26 国立大学法人 和歌山大学 Wavelength sweeping optical coherence tomography system
JP2022078795A (en) * 2020-11-13 2022-05-25 株式会社デンソー Semiconductor laser device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5930278A (en) * 1996-01-29 1999-07-27 France Telecom Multi-wavelength laser-emitting component

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5930278A (en) * 1996-01-29 1999-07-27 France Telecom Multi-wavelength laser-emitting component

Non-Patent Citations (8)

* Cited by examiner, † Cited by third party
Title
BLOCH J ET AL: "ROOM-TEMPERATURE 1.3 MUM EMISSION FROM INAS QUANTUM DOTS GROWN BY METAL ORGANIC CHEMICAL VAPOR DEPOSITION", APPLIED PHYSICS LETTERS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 75, no. 15, 11 October 1999 (1999-10-11), pages 2199 - 2201, XP000875635, ISSN: 0003-6951 *
GARCIA J M ET AL: "ELECTRONIC STATES TUNING OF INAS SELF-ASSEMBLED QUANTUM DOTS", APPLIED PHYSICS LETTERS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 72, no. 24, 15 June 1998 (1998-06-15), pages 3172 - 3174, XP000771116, ISSN: 0003-6951 *
KIM J K ET AL: "LATERAL CARRIER CONFINEMENT IN MINIATURE LASERS USING QUANTUM DOTS", IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, IEEE SERVICE CENTER, US, vol. 6, no. 3, May 2000 (2000-05-01), pages 504 - 510, XP000968595, ISSN: 1077-260X *
LESTER L F ET AL: "OPTICAL CHARACTERISTICS OF 1.24-MUM INAS QUANTUM-DOT LASER DIODES", IEEE PHOTONICS TECHNOLOGY LETTERS, IEEE INC. NEW YORK, US, vol. 11, no. 8, August 1999 (1999-08-01), pages 931 - 933, XP000860954, ISSN: 1041-1135 *
LI H ET AL: "150-NM TUNING RANGE IN A GRATING-COUPLED EXTERNAL CAVITY QUANTUM-DOT LASER", IEEE PHOTONICS TECHNOLOGY LETTERS, IEEE INC. NEW YORK, US, vol. 12, no. 7, July 2000 (2000-07-01), pages 759 - 761, XP000968664, ISSN: 1041-1135 *
PARK G ET AL: "TEMPERATURE DEPENDENCE OF GAIN SATURATION IN MULTILEVEL QUANTUM DOTLASERS", IEEE JOURNAL OF QUANTUM ELECTRONICS, IEEE INC. NEW YORK, US, vol. 36, no. 9, September 2000 (2000-09-01), pages 1065 - 1071, XP000975740, ISSN: 0018-9197 *
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Also Published As

Publication number Publication date
EP1354380A2 (en) 2003-10-22
AU2002246489A1 (en) 2002-07-30
WO2002058200A2 (en) 2002-07-25
CA2423782A1 (en) 2002-07-25
JP2004528705A (en) 2004-09-16
JP2009117856A (en) 2009-05-28
IL155026A0 (en) 2003-10-31
WO2002058200A9 (en) 2003-05-30
IL155026A (en) 2006-07-05
JP2007318165A (en) 2007-12-06

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