WO2002048023A2 - Procede permettant d'ameliorer les structures de silicium polycristallin d'un dispositif mems au moyen d'un masquage empechant la gravure anodique de ces structures - Google Patents

Procede permettant d'ameliorer les structures de silicium polycristallin d'un dispositif mems au moyen d'un masquage empechant la gravure anodique de ces structures Download PDF

Info

Publication number
WO2002048023A2
WO2002048023A2 PCT/US2001/051334 US0151334W WO0248023A2 WO 2002048023 A2 WO2002048023 A2 WO 2002048023A2 US 0151334 W US0151334 W US 0151334W WO 0248023 A2 WO0248023 A2 WO 0248023A2
Authority
WO
WIPO (PCT)
Prior art keywords
etching
mask
gold
layer
mercaptain
Prior art date
Application number
PCT/US2001/051334
Other languages
English (en)
Other versions
WO2002048023A3 (fr
Inventor
John Gritters
Michael J. Sailor
Original Assignee
Omm, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Omm, Inc. filed Critical Omm, Inc.
Publication of WO2002048023A2 publication Critical patent/WO2002048023A2/fr
Publication of WO2002048023A3 publication Critical patent/WO2002048023A3/fr

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00777—Preserve existing structures from alteration, e.g. temporary protection during manufacturing
    • B81C1/00785—Avoid chemical alteration, e.g. contamination, oxidation or unwanted etching
    • B81C1/00801—Avoid alteration of functional structures by etching, e.g. using a passivation layer or an etch stop layer
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0128—Processes for removing material
    • B81C2201/013—Etching
    • B81C2201/0133—Wet etching
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/016—Passivation

Definitions

  • Microelectromechanical systems or MEMS have electro-mechanical structures typically sized on a millimeter scale or smaller. These structures are used in a wide variety of applications including for example, sensing, electrical and optical switching, and micron scale (or smaller) machinery, such as robotics and motors. Because of their small size, MEMS devices may be fabricated utilizing semiconductor production methods and other microfabrication techniques such as thin film processing utilizing lithographic techniques. Once fabricated, the MEMS structures are assembled to form MEMS devices.
  • Optomechanical switches can employ any of a variety of configurations. A few examples of optomechanical switches are shown in: U.S. Patent Application Serial No. 09/063,664, filed on April 20, 1998, by Li Fan, entitled MICROMACHINED OPTOMECHANICAL SWITCHES, issued as U.S. Patent No. , on ; U.S. Patent Application Serial No. 09/483,268, filed on
  • MEMS devices typically have force bearing structures. That is, structures that communicate or sustain mechanical forces which are developed external to or generated by the device. MEMS devices are fabricated on a substrate, typically silicon, with thin film deposition and etch techniques. In silicon MEMS devices, the force bearing structures can be formed of polycrystalline silicon, sometimes referred to as polysilicon. Uniformity of these structures is important, and sometimes critical to the reliability of the device.
  • optomechanical switches such as the switch 100 shown in Fig. 1 A for illustration purposes, can employ a spring or torsional structure to bias a switch structure into a desired position. Electrical fields then may be used to actuate, for example, the mirror 120, from a spring biased position to a second position to alter the path of the light signal. In the case of Fig. 1 A, the mirror 120 is actuated into and out of the path of the light signal. It has been discovered that the required actuation voltage to overcome the spring constant can vary from production lot to production lot, or even from device to device. Further, it has been discovered that the force bearing structures, such as the spring 110, in the example of Fig. 1 A, can have varied maximum force bearing capabilities and fatigue resistance. This increases the failure rate and reduces the predictability of devices.
  • a method for fabricating a MEMS device on a workpiece includes forming a mask over a metallic surface, etching a dielectric layer from the workpiece to expose a polysilicon comprising structure, and removing the mask from the metallic comprising surface. With such a method, it is possible to inhibit anodic etching of the polysilicon structures of the MEMS device.
  • a method for fabricating a MEMS device on a workpiece by forming a mask on a gold structure using a sulfur compound, such as a mercaptain.
  • the mask is used to inhibit anodic etching of polysilicon structures during the acid etch process that is used to remove the oxide layer from the workpiece and expose the polysilicon structures of the MEMS device to allow their movement.
  • the mercaptain can be utilized to adhere to the exposed gold surface to form a self- mask on the gold surface.
  • a workpiece having numerous gold surfaces, such as numerous optomechanical switches, each having various types of gold structures can be placed in a mercaptain solution.
  • the mercaptain selectively coats the gold surfaces to form self-adhering mercaptain masks on all the exposed gold surfaces. Any excess mercaptain on non-gold surfaces can be removed with a short rinse while leaving the mercaptian mask.
  • Fig. 1 A shows an example of a MEMS optomechanical switch device.
  • Fig. IB shows a top view of the MEMS optomechanical switch device of Fig. 1A as partially fabricated.
  • Fig. 2 illustrates a possible implementation in accordance with the present invention.
  • Fig. 3 illustrates an MEMS structure formed in accordance with the present invention.
  • Fig. 4 illustrates an MEMS structure formed in accordance with the present invention.
  • Fig. 5 illustrates a possible implementation in accordance with the present invention.
  • Fig. 6 illustrates a possible implementation in accordance with the present invention.
  • polysilicon structures are defined in layers by thin film process.
  • a process typically includes surrounding, partially or completely, the structural parts of the device with a dielectric, typically an oxide, such as silicon dioxide.
  • oxide such as silicon dioxide.
  • the oxide portion is removed to expose the parts and allow their movement. Removal of the oxide can be performed with an acid etch process. For example, silicon dioxide may be removed with a hydrofluoric acid etch.
  • Fig. 1 A for example purposes, some assembly is required after the oxide etch process.
  • Fig. IB shows a further example for illustration purposes, of a top view of the optomechanical switch 100 of Fig. 1 A prior to assembly.
  • MEMS devices typically have structures having metallic material such as bond pads, interconnect lines, and, in the case of MEMS optical switches, a large mirrored surface.
  • the relatively large size of the surface area of the mirror surface gives rise to a significant electrochemical reaction during etching.
  • the mirror structure typically has a metallic mirror surface deposited over a polysilicon backing. The mirror surface can be deposited directly on the polysilicon. Or, the gold can be deposited on some other metallic or semi-metallic material that is deposited on the polysilicon to enhance the deposition characteristics of the mirror material.
  • the mirrored surface of the optomechanical switch can be any well known sufficiently reflective material, such as aluminum or gold.
  • the material of the mirror is selected to have good reflective properties at the transmission frequency.
  • gold is preferred for use with infrared frequency light, which is commonly used in fiber optic transmission lines. Gold is also sometimes used to form the interconnect lines, bond pads, and/or other structures typically formed with metallic material.
  • the presence of the gold on the mirror and elsewhere causes galvanic action to arise during the acid etch used to expose the polysilicon structures. The galvanic action results in anodic etching of the polysilicon structures during the acid etch process. The galvanic action results from the gold being in electrical contact with the polysilicon structures of the device. The ratio of the exposed surface area of the.
  • the torsional spring structure which affixes the actuated portions of the switch to the substrate and provides a pivot point therebetween, can become severely anodically etched. This in turn weakens the spring.
  • the electrical pads used to actuate the switch also can be severely anodically etched. Anodically etched pads can change the characteristics of the actuation E-field communicated by the pad.
  • Fig. 2 in one implementation 200 of the present invention, to inhibit the deleterious effects resulting during the oxide dielectric removal, gold surfaces are masked 210. Then, the dielectric is etched to expose a polysilicon structure 220. After the etch, the gold coat is removed 230.
  • Fig. 3 illustrates a metallic structure 309 coupled to a polysilicon layer 303.
  • the metallic structure maybe an electrode, bond pad, a lead, a via, a contact, a cladding surface or structure, a reflective structure, or other structure typically formed of conductive metals.
  • the mask 306 is formed to cover the otherwise exposed surfaces of a metallic structure 309. The mask 306 inhibits the acid from coming into contact with the metallic structure during the etch process and thus inhibits the electrochemical cell f om forming between the metallic structure and the polysilicon layer 303.
  • the mask maybe formed of a sulfur compound, such as for example, an organosulfur compound, which can be a mercaptain.
  • a mercaptain is a group of organosulfur compounds that are derivatives of hydrogen sulfide in the same way that alcohols are derivatives of water.
  • Mercaptains such as 1-Decanethiol, 1-Octanethiol, or the like, may be utilized to form the mask. Mercaptains are available from Aldrich Chemical Company, of Milwaukee, Wisconsin. Mercaptains adhere particularly well to non-oxide containing metallic surfaces such as a gold surface. It is anticipated that mercaptains also could be used to form masks on structures formed of other noble metals as well.
  • sulfur based compounds may be employed to mask noble metals.
  • thioether or compounds which have a sulfur atoms near the end of a molecule chain could be used as a masking agent.
  • carbon based compounds such as isocyanides, isocyanates, isonitrile, thiocyanates, or other carbon compounds which have a carbon atoms near the end of a molecule chain to provide adhesion properties to noble metals could be employed.
  • selenium compounds or telurim compounds could be utilized.
  • the mask 306 could be formed of photoresist to cover the metallic structure 309. This is provided that the photoresist mask can provide adequate protection during the desired duration of the acid etch process. For example, the photoresist mask must adhere well enough to the metallic structure without lifting off during the acid etch process used to release the structures of the MEMS devices.
  • the mask 306 can be employed in some emodiments to cover all the exposed surfaces of the metallic structure 309, such as the top and side walls 309a & 309b. This minimizes the amount of surface area exposed to the acid solution during etch.
  • the mercaptain adheres to the exposed gold surface to form a self-mask on the gold surface.
  • a workpiece having numerous optomechanical switches, each having various types of gold structures can be placed in a mercaptain solution and the mercaptain will selectively coat the gold surfaces, forming self- adhering mercaptain masks on all the exposed gold surfaces. Any excess mercaptain on non-gold surfaces can be removed with a short rinse as is discussed further below.
  • An optional intermediate material 311 can be disposed between the metallic layer 309 and the polysilicon layer 303.
  • an intermediate layer 311 of TiW can be used to provide better adhesion of a gold mirror metallic layer 309 to a polysilicon layer 303 that is used as a mirror backing.
  • the intermediate layer 411 may be a material that forms an oxide passivation layer 416, such as, for example Cr. Such a material has an oxide layer 416, i.e. CrO 3 , on the exterior walls of the Cr which is not striped during the acid etch process.
  • an oxide mask 416 exists on the sidewalls of intermediate layer 411 during the etch process, inhibiting galvanic action between the intermediate layer 411 and the polysilicon structures of the device. This further reduces the anodic etching of the polysilicon structures of the device.
  • the mask 306 of Fig. 3 could be made to cover the intermediate layer in some embodiments, it is not necessary with Cr or the like.
  • the intermediate layer 311 could be formed of a dielectric material to inhibit electrical connection between the metallic structure 309 and the polysilicon layer 303 so as to inhibit anodic etching of the polysilicon. This may be possible with some metallic structures, where electrical connection to the polysilicon structures is not necessary.
  • One example is the reflective mirror of the optomechanical switch discussed above. If a dielectric intermediate layer 311 were used, anodic etching of polysilicon structures would be inhibited without using the mask 306. In such an implementation, however, the dielectric material of the intermediate layer 311 should be inhibited from etching along with the dielectric oxide layer that is intentionally being removed. This is to insure that the reflective mirror material is not undercut to the point of causing it to lift off, compromising its integrity, reducing its reflective properties, or diminishing its reliability.
  • Fig. 5 shows one possible implementation 500 utilizing the mercaptain mask.
  • MEMS devices will have a photoresist layer present on the workpiece after the deposition process has been completed. If so, the photoresist is striped 505, usually with acetone, such as with a 3 to 5 second acetone rinse, followed by a 5 minute acetone soak in a glass container, followed by a 3 to 5 second acetone rinse.
  • a pre-clean 507 is performed prior to forming the mercaptain mask.
  • the preclean can be performed with a 5 minute soak in an alcohol solution in the glass container.
  • the pre-clean 507 can be performed with the diluent used to form the mercaptain solution, such as with ethanol, or isopropyl alcohol.
  • a mercaptain solution such as mercaptian in alcohol diluent
  • a mercaptain solution is applied to the workpiece 510.
  • a 1-Decanethiol (96%) mercaptain can be utilized.
  • the workpiece is exposed to a solution with greater than about 8% solution of 1- Decanethiol (96%) in isopropyl alcohol, such as about 10% solution of 1-Decanethiol (96%>) in isopropyl alcohol, for about 5 minutes. It is possible to use less than about 8% of 1- Decanethiol (96%), and to use longer durations.
  • a greater than about 8% of 1-Decanethiol (96%) solution provides in a 5 minute period, a sufficient amount of coating on the gold surfaces to ensures sufficient integrity of the mask coating.
  • alcohols conveniently can be used as the diluent for application of mercaptain.
  • isopropyl, ethyl, or other alcohol can be used as the diluent.
  • other diluents which will not attack the structures of the workpiece, can be used.
  • petroleum ether, or other organic diluents capable of solubilizing sulfur compounds could be utilized.
  • Mercaptains also could be solubilized with inorganic solutions.
  • supercritical CO2 could be employed as a diluent for a solvent based application.
  • gas vapor transport is a possible alternative to solution based application of mercaptain or other mask compound.
  • An alcohol rinse 515 may be performed after the application of the mercaptain to the gold surfaces to rinse away any excess mercaptain.
  • the duration of the alcohol rinse 515 should be limited so that a sufficient coating of mercaptain remains on the gold surfaces.
  • the alcohol rinse 515 maybe a 2 minute rinse followed by another 3 minute rinse with isopropyl alcohol.
  • Mercaptain can clump or ball in water based solutions such as acid. As a mercaptain solution can be viscous, the rinse helps to remove any excess mercaptain left on non-gold surfaces. This will help to prevent formation on the oxide surfaces of clumps which can cause non-uniform etching of the oxide.
  • the acid etch of the oxide layer to release the MEMS structures 520 can be performed.
  • the acid etch may be a hydrofluoric acid bath, or other acid bath, in a TEFLON container.
  • the mask formed on the gold, or other metallic surface inhibits formation of a galvanic cell between the metallic surface and the polysilicon structures of the MEMS device.
  • anodic etching of the polysilicon structures is inhibited during the acid etch of the oxide layer.
  • an alcohol rinse can be performed to remove any remaining acid from the acid etch process and to remove the mercaptain mask 530. Multiple separate rinses may be performed to improve removal of the mercaptain mask.
  • example 3 separate 5 minute rinses using isopropyl alcohol with deionized water may be performed to remove the mercaptain f om the gold surfaces and wash away any remaining mercaptain clumps.
  • Mild agitation may be used to facilitate removal of the mask material from the non-gold surfaces.
  • a short alcohol rinse process such as discussed above, may be used to deplete the mercaptain mask, but not completely remove it.
  • the short alcohol rinse process may be used to substantially remove the mercaptian mask, leaving a residual mercaptain film remaining.
  • the remaining mercaptain film can be removed with an O 2 plasma etch, such as with an RF plasma, or with an ozone clean, such as by generating ozone with a ultra-violet light.
  • a 5 minute trichloroethylene rinse may be performed after the alcohol rinse 640. The trichloroethylene rinse removes the alcohol prior to it drying.
  • a vacuum bake 650 may be performed after the trichloroethylene rinse to remove the trichloroethylene.
  • a super critical dry process could be used. Such a process is known in the art and employs CO 2 near its triple point which is "evaporated" from the surface rather than baked dry. In such a process, the CO 2 would displace the alcohol and inhibit residue from forming on the device surfaces.
  • Removal of any residual mercaptain that may remain on the gold surfaces after the alcohol rinse 530, can be performed after the workpiece has been dried.
  • an O 2 plasma etch, or an ozone clean may be performed anytime after a vacuum bake, a super critical dry process, or other drying process.

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Micromachines (AREA)
  • Mechanical Light Control Or Optical Switches (AREA)

Abstract

L'invention concerne un procédé permettant de produire un dispositif microélectromécanique (MEMS) sur une pièce. Ce procédé consiste à former un masque sur une surface métallique, à graver la couche diélectrique de la pièce de manière à exposer une structure comprenant du silicium polycristallin, puis à éliminer le masque de la surface métallique. Un tel procédé permet d'empêcher la gravure anodique des structures de silicium polycristallin et permet ainsi d'améliorer les caractéristiques matérielles des structures de silicium polycristallin et d'assurer une uniformité et une résistance structurelle améliorées ainsi qu'une plus grande fiabilité et des rendements plus élevés. Dans un commutateur optique à MEMS, ce procédé peut améliorer le réglage de la tension de fonctionnement et augmenter ainsi la précision des niveaux de tension de coupure et d'ouverture. Dans un mode de mise en oeuvre, ce procédé permet de produire un dispositif MEMS sur une pièce par la formation d'un masque de mercaptan sur une structure d'or. Ce masque permet d'empêcher la gravure anodique des structures de silicium polycristallin pendant le processus de gravure à l'acide qui sert à éliminer la couche d'oxyde diélectrique de la pièce pour exposer les structures de silicium polycristallin du dispositif MEMS afin de permettre le mouvement de celles-ci. Le mercaptan adhère sur l'or et peut être utilisé comme produit auto-masquant sur une surface d'or exposée. Ainsi une pièce comprenant de nombreuses surfaces d'or, par exemple un grand nombre de commutateurs optomécaniques comprenant chacun différents types de structures d'or, peut être placée dans une solution de mercaptan. Le mercaptan recouvre sélectivement les surfaces d'or de manière à former des masques de mercaptan auto-adhésifs sur toutes les surfaces d'or exposées.
PCT/US2001/051334 2000-10-25 2001-10-25 Procede permettant d'ameliorer les structures de silicium polycristallin d'un dispositif mems au moyen d'un masquage empechant la gravure anodique de ces structures WO2002048023A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US69703500A 2000-10-25 2000-10-25
US09/697,035 2000-10-25

Publications (2)

Publication Number Publication Date
WO2002048023A2 true WO2002048023A2 (fr) 2002-06-20
WO2002048023A3 WO2002048023A3 (fr) 2003-08-21

Family

ID=24799522

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2001/051334 WO2002048023A2 (fr) 2000-10-25 2001-10-25 Procede permettant d'ameliorer les structures de silicium polycristallin d'un dispositif mems au moyen d'un masquage empechant la gravure anodique de ces structures

Country Status (1)

Country Link
WO (1) WO2002048023A2 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1403211A3 (fr) * 2002-09-12 2005-09-14 PTS Corporation Protection améliorée de composants microméchaniques contre la dégradation galvanique à l'aide d'un tensioactif
CN107437496A (zh) * 2016-05-26 2017-12-05 细美事有限公司 用于处理基板的装置和方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5216490A (en) * 1988-01-13 1993-06-01 Charles Stark Draper Laboratory, Inc. Bridge electrodes for microelectromechanical devices
WO1995000258A1 (fr) * 1993-06-18 1995-01-05 The Regents Of The University Of California Procede d'application de lubrifiant en monocouche sur des instruments de micro-usinage
WO1996024145A2 (fr) * 1995-01-20 1996-08-08 The Regents Of The University Of California Dispositif d'actionnement magnetique a micro-structure
EP0746013A2 (fr) * 1995-05-31 1996-12-04 Texas Instruments Incorporated Méthode de nettoyage et traitement d'un dispositif micromécanique

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5216490A (en) * 1988-01-13 1993-06-01 Charles Stark Draper Laboratory, Inc. Bridge electrodes for microelectromechanical devices
WO1995000258A1 (fr) * 1993-06-18 1995-01-05 The Regents Of The University Of California Procede d'application de lubrifiant en monocouche sur des instruments de micro-usinage
WO1996024145A2 (fr) * 1995-01-20 1996-08-08 The Regents Of The University Of California Dispositif d'actionnement magnetique a micro-structure
EP0746013A2 (fr) * 1995-05-31 1996-12-04 Texas Instruments Incorporated Méthode de nettoyage et traitement d'un dispositif micromécanique

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
GOOSSEN J F L ET AL: "PROBLEMS OF SACRIFICIAL ETCHING IN A COMBINED SURFACE MICROMACHINING AND ELECTRONIC PROCESS" PROCEEDINGS OF THE 1996 NATIONAL SENSOR CONFERENCE. DELFT, MAR. 20 - 21, 1996, PROCEEDINGS OF THE NATIONAL SENSOR CONFERENCE, DELFT, DELFT UNIVERSITY PRESS, NL, 20 March 1996 (1996-03-20), pages 193-196, XP000697536 ISBN: 90-407-1321-9 *
WEIJIE YUN ET AL: "Surface micromachined, digitally force-balanced accelerometer with integrated CMOS detection circuitry" TECHNICAL DIGEST, IEEE SOLID-STATE SENSOR & ACTUATOR WORKSHOP, NEW YORK, NY, US, 22 June 1992 (1992-06-22), pages 126-131, XP002109832 *

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1403211A3 (fr) * 2002-09-12 2005-09-14 PTS Corporation Protection améliorée de composants microméchaniques contre la dégradation galvanique à l'aide d'un tensioactif
US7153440B2 (en) 2002-09-12 2006-12-26 Pts Corporation Surfactant-enhanced protection of micromechanical components from galvanic degradation
US7560037B2 (en) 2002-09-12 2009-07-14 Altera Corporation Surfactant-enhanced protection of micromechanical components from galvanic degradation
CN1495293B (zh) * 2002-09-12 2010-10-27 阿尔特拉公司 由表面活性剂增强的防止微机械部件电老化的保护方法
CN107437496A (zh) * 2016-05-26 2017-12-05 细美事有限公司 用于处理基板的装置和方法
CN107437496B (zh) * 2016-05-26 2021-03-12 细美事有限公司 用于处理基板的装置和方法

Also Published As

Publication number Publication date
WO2002048023A3 (fr) 2003-08-21

Similar Documents

Publication Publication Date Title
US6682871B2 (en) Microelectromechanical optical switch and method of manufacture thereof
CA2154357C (fr) Microstructures et methode a un seul masque et a cristal unique pour leur obtention
US6830950B2 (en) Integrated method for release and passivation of MEMS structures
CA2563406C (fr) Commande electrostatique souple
US7504757B2 (en) Multi-finger z-actuator
US20060181379A1 (en) Stress bimorph MEMS switches and methods of making same
US20040033639A1 (en) Integrated method for release and passivation of MEMS structures
US6238580B1 (en) Method of HF vapor release of microstructures
KR19980042006A (ko) 메가소닉 필드존재하에서 희석한 화학 부식액을 사용한ＳｉＯ₂에치속도 제어 방법
US7785913B2 (en) System and method for forming moveable features on a composite substrate
US6906845B2 (en) Micro-mechanical device having anti-stiction layer and method of manufacturing the device
WO2007041431A1 (fr) Systeme de contacts pour interrupteur mems
US6813054B2 (en) Micro-electro-mechanical device having improved torsional members and a method of manufacturing therefor
US7152300B1 (en) Method of manufacturing a micromechanical structure
US20030218789A1 (en) Monolithic in-plane shutter switch
WO2002048023A2 (fr) Procede permettant d'ameliorer les structures de silicium polycristallin d'un dispositif mems au moyen d'un masquage empechant la gravure anodique de ces structures
US4097618A (en) Method of transferring a surface relief pattern from a poly(1-methyl-1-cyclopropene sulfone) layer to a non-metallic inorganic layer
US7560037B2 (en) Surfactant-enhanced protection of micromechanical components from galvanic degradation
KR100593653B1 (ko) 1 미크론 이하의 폭을 갖는 금속 라인을 형성하기에적절한 패턴의 제조 방법
JP2003305697A (ja) 中空構造体の製造方法
US7041611B2 (en) Enhancement of fabrication yields of nanomechanical devices by thin film deposition
JP2010256452A (ja) マイクロメカニカル構造体の作製方法
CN118648392A (zh) 用于衬底上的薄膜层的制造方法
Fleming et al. Tungsten coating for improved wear resistance and reliability of microelectromechanical devices
Hackeit et al. Alternative materials for micro-electro-mechanical device construction

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): CN JP

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE TR

121 Ep: the epo has been informed by wipo that ep was designated in this application
DFPE Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101)
122 Ep: pct application non-entry in european phase
NENP Non-entry into the national phase in:

Ref country code: JP