WO2002033800A1 - Ensemble circuit pour conduire une charge - Google Patents

Ensemble circuit pour conduire une charge Download PDF

Info

Publication number
WO2002033800A1
WO2002033800A1 PCT/DE2001/002386 DE0102386W WO0233800A1 WO 2002033800 A1 WO2002033800 A1 WO 2002033800A1 DE 0102386 W DE0102386 W DE 0102386W WO 0233800 A1 WO0233800 A1 WO 0233800A1
Authority
WO
WIPO (PCT)
Prior art keywords
protection
circuit arrangement
arrangement according
semiconductor
output stage
Prior art date
Application number
PCT/DE2001/002386
Other languages
German (de)
English (en)
Inventor
Stefan Koch
Robert Kern
Original Assignee
Robert Bosch Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Robert Bosch Gmbh filed Critical Robert Bosch Gmbh
Publication of WO2002033800A1 publication Critical patent/WO2002033800A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H11/00—Emergency protective circuit arrangements for preventing the switching-on in case an undesired electric working condition might result
    • H02H11/002—Emergency protective circuit arrangements for preventing the switching-on in case an undesired electric working condition might result in case of inverted polarity or connection; with switching for obtaining correct connection
    • H02H11/003—Emergency protective circuit arrangements for preventing the switching-on in case an undesired electric working condition might result in case of inverted polarity or connection; with switching for obtaining correct connection using a field effect transistor as protecting element in one of the supply lines
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H5/00—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal non-electric working conditions with or without subsequent reconnection
    • H02H5/04—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal non-electric working conditions with or without subsequent reconnection responsive to abnormal temperature
    • H02H5/044—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal non-electric working conditions with or without subsequent reconnection responsive to abnormal temperature using a semiconductor device to sense the temperature

Definitions

  • the invention is based on a circuit arrangement for operating a load according to the type of the independent claim.
  • the overtemperature protection reduces the control voltage of the field-effect transistor, which reacts to this measure by reducing the drain current, if an overtemperature occurs, which is detected by an integrated temperature sensor. If the overload situation is not within the field effect transistor is switched off completely.
  • the overtemperature protection requires an operating current which is to be provided by the control signal of the field effect transistor. The operating current is below the limit temperature.
  • the invention has for its object to provide a circuit arrangement for operating a load, which enables both overtemperature protection and protection against polarity reversal with inexpensive means.
  • a semiconductor component with integrated overtemperature protection is provided instead of the conventional field effect transistor previously used as reverse polarity protection.
  • This measure makes it possible to use the output stage semiconductors used to operate the load as semiconductors without integrated protection circuits. Protection against temperature is removed from the output stage semiconductors and incorporated into the reverse polarity protection semiconductor.
  • the cost saving has an effect in particular if there are several output stage semiconductors which can be protected against temperature with a polarity reversal protection semiconductor.
  • the on-state resistance of the reverse polarity protection provided according to the invention is higher than that of a conventional reverse polarity protection semiconductor.
  • Semiconductors with integrated overtemperature protection are of no importance, since only a shift from the output stage semiconductors to the polarity reversal protection semiconductor occurs.
  • An advantageous embodiment of the reverse polarity protection semiconductor provides that a field effect transistor with integrated overtemperature protection (TEMPFET) is provided.
  • TEMPFET field effect transistor with integrated overtemperature protection
  • TEMPFET is an n-channel TEMPFET, which is arranged in a negative line of the circuit arrangement.
  • the advantage is a lower forward resistance compared to a p-
  • Channel TEMPFET which is due to the manufacturing technology and is essentially related to the ion mobility.
  • control input of the polarity reversal protection semiconductor is connected to a current source. Due to the difference in the input current of the polarity reversal protection semiconductor when the overtemperature protection is activated and not addressed, the current source enables the respective state to be detected by a simple voltage measurement at the control input of the polarity reversal protection semiconductor.
  • the current source can be designed as an ohmic resistor.
  • the one at the control input of the reverse polarity protection semiconductor. occurring voltage can be compared in a comparator with a predetermined threshold value, so that the output signal of the comparator indicates as a digital signal an overtemperature condition of the reverse polarity protection semiconductor.
  • the figure shows a load 10 which is arranged in the diagonal 11 of a bridge circuit 12.
  • the bridge circuit 12 lies between a plus line 13 and a minus line 1.
  • the plus line 13 leads to a plus terminal 15 and the minus line 14 to a minus terminal 16.
  • the bridge circuit 12 contains output stage semiconductors 18-21, which each have parasitic diodes 22-25.
  • Power stage semiconductors 18-21 are controlled by a control circuit 26 with control signals 27-30.
  • the control circuit 26 determines the control signals 27-30 as a function of an input signal 31.
  • a reverse polarity protection 32 which contains a current source 33 and a reverse polarity protection semiconductor 34.
  • the reverse polarity protection semiconductor 34 contains an integrated overtemperature protection 35 and a parasitic diode 36.
  • the current source 33 is connected to the control connection 37 of the polarity reversal protection semiconductor 34.
  • a comparator 38 is also connected there, which outputs a switch-off signal 39 to the control circuit 26.
  • the comparator 38 equals the voltage at the control connection 37 with the voltage at the negative line 14.
  • the circuit arrangement according to the invention for operating a load 10 works as follows:
  • the output stage semiconductors 18-21 are arranged in the bridge circuit 12, in the diagonal 11 of which the load 10 lies.
  • the load 10 can be connected between the plus line 13 and the minus line 14 depending on the control signals 27-30.
  • Field-effect transistors are provided as output stage semiconductors 18-21, for example, which contain parasitic diodes 22-25 due to their internal structure. In the event of a defect in the load 10, for example a short circuit, an overcurrent can occur in two of the output stage semiconductors 18-21, which after a short time can lead to thermal destruction of the output stage semiconductors 18-21 concerned.
  • Power stage semiconductors 18-21 are available on the market with an integrated protection circuit which, in addition to current limitation and overvoltage protection, in particular contain integrated overtemperature protection.
  • the field-effect transistors designed as output stage semiconductors 18-21 with an integrated protective circuit do not offer any protection against polarity reversal due to their parasitic diodes 22-25. Exchanging the positive terminal 15 with the negative terminal 16 on the Energy source 17 would bring the parasitic diodes 22-25 into the conductive state, which cannot be removed even by an integrated protective circuit. Protection against reverse polarity is therefore only possible with an additional reverse polarity contactor 32.
  • the reverse polarity protection semiconductor 34 is arranged, for example, in the negative line 14.
  • a field effect transistor is preferably used, which can be implemented as an n-channel field effect transistor when arranged in the negative line 14.
  • a positive voltage on the positive line 13 is available for switching through the polarity reversal protection semiconductor 34.
  • the current source 33 is provided, which connects the positive line 13 to the control connection 37 of the polarity reversal protection semiconductor 34.
  • the reverse polarity protection semiconductor 34 contains an integrated overtemperature protection 35. With this measure, the reverse polarity protection semiconductor 34 takes over protection against reverse polarity as well as protection against overtemperature.
  • the output stage semiconductors 18-21 can therefore do without integrated overtemperature protection. Cost savings result in particular if there are a number of output stage semiconductors 18-21 which can be protected against excess temperature with a single reverse polarity protection semiconductor 34 against excess temperature.
  • the increased costs of a reverse polarity protection semiconductor 34 with an integrated overtemperature protection 35 and the higher forward resistance in the conductive state of the reverse polarity protection semiconductor 34 with an integrated overtemperature protection 35 compared to a reverse polarity protection semiconductor without the integrated overtemperature protection 35 occur only once and can with regard to the increased forward resistance comparable design can be taken into account by appropriate circuit design.
  • the integrated overtemperature protection 35 requires an operating current in the switched-on state, which is provided by the current source 33.
  • the current source 33 can be implemented as an ohmic resistor.
  • TEMPFET field effect transistors on the market with integrated overtemperature protection 35, which are suitable as polarity reversal protection semiconductors 34, are referred to as TEMPFET, MITFET or OMNIFET, for example.
  • the TEMPFET 34 requires at temperatures below that of the integrated circuit
  • Overtemperature protection 35 specified limit temperature an operating current, which is for example in the ⁇ A range. If, on the other hand, the limit temperature is exceeded by the integrated overtemperature protection 35, this state can be signaled to the outside by the TEMPFET by the integrated overtemperature protection 35 becoming low-resistance, which leads to an increased current flow at the control connection 37. The increased current can be in the mA range.
  • a voltage is provided on the basis of the current source 33, which the comparator 38 evaluates. The switching threshold of the comparator 38 is to be matched to the expected changes in voltage.
  • the comparator compares the voltage at the control connection 37 with the voltage at the negative line 14, to which the source of the TEMPFET is connected.
  • the comparator 38 can also be implemented, for example, as a transistor, the threshold voltage being determined by the base-emitter voltage for switching on the transistor. Adaptation is easily possible using ohmic resistors. A particularly simple implementation is obtained when using a pnp transistor whose emitter is connected to the positive line 13.
  • the switch-off signal 39 of the comparator 38 is supplied to the control circuit 26 in the exemplary embodiment shown.
  • the control circuit 26 sets the control signals 27-30 at values at which the output stage semiconductors 18 independently of their input signal 31, with which the control signals 27-30 of the output stage semiconductors 18-21 are defined per se - 21 are switched off.
  • the switch-off signal 39 can also be used directly to influence the control signals 27-30 instead of the intervention within the control circuit 26.
  • a possible realization can be provided by short-circuiting the control signals 27-30 against the negative line 14 by means of switching transistors.
  • the parasitic diode 36 contained in the TEMPFET 34 does not interfere with the reverse polarity protection effect. If the positive terminal 15 and the negative terminal 16 are connected to the energy source 17 with a polarity reversal, the parasitic diode 36 blocks. In the case of a connection with the correct polarity, the parasitic diode 36 conducts and enables the load 10 to be started up. With a connection with the correct polarity, the parasitic diode 36 is bridged by a complete switching of the TEMPFET's 34, which in the switched-on state has a considerably lower forward resistance than the parasitic one Has diode 36.

Landscapes

  • Semiconductor Integrated Circuits (AREA)

Abstract

L'invention concerne un ensemble circuit conçu pour conduire une charge (10), comprenant au moins un semi-conducteur de puissance (18 - 21) et une irréversibilité de la polarité (32). Cette irréversibilité de polarité (32) est constituée par un semi-conducteur irréversible (34) à protection intégrée contre l'élévation de température (35).
PCT/DE2001/002386 2000-10-20 2001-06-28 Ensemble circuit pour conduire une charge WO2002033800A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10051976.8 2000-10-20
DE2000151976 DE10051976A1 (de) 2000-10-20 2000-10-20 Schaltungsanordnung zum Betreiben einer Last

Publications (1)

Publication Number Publication Date
WO2002033800A1 true WO2002033800A1 (fr) 2002-04-25

Family

ID=7660411

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2001/002386 WO2002033800A1 (fr) 2000-10-20 2001-06-28 Ensemble circuit pour conduire une charge

Country Status (2)

Country Link
DE (1) DE10051976A1 (fr)
WO (1) WO2002033800A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2031758A1 (fr) * 2007-08-29 2009-03-04 Yazaki Corporation Circuit de protection

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102011057002A1 (de) * 2011-12-23 2013-06-27 Valeo Systèmes d'Essuyage Vorrichtung zur Betriebszustandsüberwachung einer Verpolschutzvorrichtung, Verfahren zum Betreiben einer Verpolschutzvorrichtung sowie Verwendung einer solchen Vorrichtung zur Betriebszustandsüberwachung

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19803040A1 (de) * 1997-01-31 1998-08-06 Int Rectifier Corp Leistungsschaltung

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19803040A1 (de) * 1997-01-31 1998-08-06 Int Rectifier Corp Leistungsschaltung

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2031758A1 (fr) * 2007-08-29 2009-03-04 Yazaki Corporation Circuit de protection

Also Published As

Publication number Publication date
DE10051976A1 (de) 2002-05-16

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