WO2002027405A3 - Illumination system particularly for microlithography - Google Patents

Illumination system particularly for microlithography Download PDF

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Publication number
WO2002027405A3
WO2002027405A3 PCT/EP2001/011224 EP0111224W WO0227405A3 WO 2002027405 A3 WO2002027405 A3 WO 2002027405A3 EP 0111224 W EP0111224 W EP 0111224W WO 0227405 A3 WO0227405 A3 WO 0227405A3
Authority
WO
WIPO (PCT)
Prior art keywords
optical
optical element
optical axis
optical component
illumination system
Prior art date
Application number
PCT/EP2001/011224
Other languages
French (fr)
Other versions
WO2002027405A2 (en
Inventor
Martin Antoni
Wolfgang Singer
Johannes Wangler
Original Assignee
Zeiss Carl
Zeiss Stiftung
Martin Antoni
Wolfgang Singer
Johannes Wangler
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/679,718 external-priority patent/US6438199B1/en
Priority claimed from DE20100123U external-priority patent/DE20100123U1/en
Priority claimed from DE10100265A external-priority patent/DE10100265A1/en
Application filed by Zeiss Carl, Zeiss Stiftung, Martin Antoni, Wolfgang Singer, Johannes Wangler filed Critical Zeiss Carl
Priority to US11/981,033 priority Critical patent/USRE41667E1/en
Priority to US10/381,624 priority patent/US6858853B2/en
Priority to EP01985764A priority patent/EP1320857A2/en
Priority to JP2002530922A priority patent/JP2004510344A/en
Publication of WO2002027405A2 publication Critical patent/WO2002027405A2/en
Publication of WO2002027405A3 publication Critical patent/WO2002027405A3/en

Links

Classifications

    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70083—Non-homogeneous intensity distribution in the mask plane
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G03F7/70108—Off-axis setting using a light-guiding element, e.g. diffractive optical elements [DOEs] or light guides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/7015—Details of optical elements
    • G03F7/70166—Capillary or channel elements, e.g. nested extreme ultraviolet [EUV] mirrors or shells, optical fibers or light guides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/702—Reflective illumination, i.e. reflective optical elements other than folding mirrors, e.g. extreme ultraviolet [EUV] illumination systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70233—Optical aspects of catoptric systems, i.e. comprising only reflective elements, e.g. extreme ultraviolet [EUV] projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
    • G03F7/70891—Temperature

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Epidemiology (AREA)
  • Theoretical Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Mathematical Physics (AREA)
  • Toxicology (AREA)
  • Environmental & Geological Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Public Health (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Lenses (AREA)
  • Microscoopes, Condenser (AREA)

Abstract

The invention concerns an illumination system, particularly for microlithography with wavelengths ≤ 193 nm, comprising: a primary light source; a first optical component; a second optical component; an image plane; and an exit pupil, wherein said first optical component transforms said primary light source into a plurality of secondary light sources that are imaged by said second optical component in said exit pupil, wherein said first optical component includes a first optical element having a plurality of first raster elements that are imaged into said image plane, producing a plurality of images being superimposed, at least partially, on a field in said image plane, wherein said first optical component comprises a collector unit and a second optical element having a plurality of second raster elements, said illumination system further comprising: a first optical axis between said collector unit and said first optical element, wherein said first optical element is reflective; a second optical axis between said first optical element and said second optical element, wherein said second optical element is reflective; and a third optical axis between said second optical element and said second optical component, wherein the directional vector of the first optical axis and the directional vector of the second optical axis define a plane and wherein said first and second optical elements are tilted to cause a crossing of the projection of said third optical axis in to said plane and said first optical axis.
PCT/EP2001/011224 1998-05-05 2001-09-28 Illumination system particularly for microlithography WO2002027405A2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
US11/981,033 USRE41667E1 (en) 1998-05-05 2001-09-28 Illumination system particularly for microlithography
US10/381,624 US6858853B2 (en) 1998-05-05 2001-09-28 Illumination system particularly for microlithography
EP01985764A EP1320857A2 (en) 2000-09-29 2001-09-28 Illumination system particularly for microlithography
JP2002530922A JP2004510344A (en) 2000-09-29 2001-09-28 Illumination optics especially for microlithography

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US09/679,718 2000-09-29
US09/679,718 US6438199B1 (en) 1998-05-05 2000-09-29 Illumination system particularly for microlithography
DE20100123.3 2001-01-05
DE20100123U DE20100123U1 (en) 2000-10-27 2001-01-05 Lighting system with reduced thermal load
DE10100265A DE10100265A1 (en) 2001-01-08 2001-01-08 Lighting system with grid elements of different sizes
DE10100265.3 2001-01-08

Publications (2)

Publication Number Publication Date
WO2002027405A2 WO2002027405A2 (en) 2002-04-04
WO2002027405A3 true WO2002027405A3 (en) 2002-07-18

Family

ID=27214231

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2001/011224 WO2002027405A2 (en) 1998-05-05 2001-09-28 Illumination system particularly for microlithography

Country Status (3)

Country Link
EP (1) EP1320857A2 (en)
JP (1) JP2004510344A (en)
WO (1) WO2002027405A2 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007027226A (en) * 2005-07-13 2007-02-01 Nikon Corp Reflecting optical system, illumination optical device, and exposure apparatus
KR101593712B1 (en) * 2008-02-15 2016-02-12 칼 짜이스 에스엠티 게엠베하 Facet mirror for use in a projection exposure apparatus for microlithography
EP3764163B1 (en) * 2019-07-11 2023-04-12 IMEC vzw An extreme ultraviolet lithography device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4655555A (en) * 1983-12-03 1987-04-07 Carl-Zeiss-Stiftung Objective with aspheric surfaces for imaging microzones
US5581605A (en) * 1993-02-10 1996-12-03 Nikon Corporation Optical element, production method of optical element, optical system, and optical apparatus
DE19903807A1 (en) * 1998-05-05 1999-11-11 Zeiss Carl Fa EUV illumination system especially for microlithography in the production of electronic components with sub-micron structure widths

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4655555A (en) * 1983-12-03 1987-04-07 Carl-Zeiss-Stiftung Objective with aspheric surfaces for imaging microzones
US5581605A (en) * 1993-02-10 1996-12-03 Nikon Corporation Optical element, production method of optical element, optical system, and optical apparatus
DE19903807A1 (en) * 1998-05-05 1999-11-11 Zeiss Carl Fa EUV illumination system especially for microlithography in the production of electronic components with sub-micron structure widths

Also Published As

Publication number Publication date
EP1320857A2 (en) 2003-06-25
WO2002027405A2 (en) 2002-04-04
JP2004510344A (en) 2004-04-02

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