WO2002021213A3 - Novel polymers and photoresist compositions for short wavelength imaging - Google Patents

Novel polymers and photoresist compositions for short wavelength imaging Download PDF

Info

Publication number
WO2002021213A3
WO2002021213A3 PCT/US2001/028206 US0128206W WO0221213A3 WO 2002021213 A3 WO2002021213 A3 WO 2002021213A3 US 0128206 W US0128206 W US 0128206W WO 0221213 A3 WO0221213 A3 WO 0221213A3
Authority
WO
WIPO (PCT)
Prior art keywords
resins
sub
photoresist compositions
short wavelength
short
Prior art date
Application number
PCT/US2001/028206
Other languages
French (fr)
Other versions
WO2002021213A2 (en
Inventor
Gary N Taylor
Robert L Brainard
Shintaro Yamada
Original Assignee
Shipley Co Llc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shipley Co Llc filed Critical Shipley Co Llc
Priority to AU2001288952A priority Critical patent/AU2001288952A1/en
Publication of WO2002021213A2 publication Critical patent/WO2002021213A2/en
Publication of WO2002021213A3 publication Critical patent/WO2002021213A3/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)

Abstract

This invention relates to resins and photoresist compositions that comprise such resins. This invention includes new resins that comprise photoacid-labile deblocking groups, wherein the acid-labile moiety is substituted with one or more electron-withdrawing groups. Polymers of the invention are particularly useful as a resin binder component of chemically-amplified positive-acting resists that can be effectively imaged at short wavelengths such as sub-300 nm and sub-200 nm and preferably about 157 nm. In such short-wavelength imaging applications resins of the invention exhibit decreased absorbance of short wavelength exposure radiation, such as sub-170 nm radiation e.g. 157 nm.
PCT/US2001/028206 2000-09-08 2001-09-08 Novel polymers and photoresist compositions for short wavelength imaging WO2002021213A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU2001288952A AU2001288952A1 (en) 2000-09-08 2001-09-08 Novel polymers and photoresist compositions for short wavelength imaging

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US60/231,473 2000-09-08
US25266400P 2000-11-22 2000-11-22
US60/252,664 2000-11-22

Publications (2)

Publication Number Publication Date
WO2002021213A2 WO2002021213A2 (en) 2002-03-14
WO2002021213A3 true WO2002021213A3 (en) 2002-06-06

Family

ID=26925155

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2001/028206 WO2002021213A2 (en) 2000-09-08 2001-09-08 Novel polymers and photoresist compositions for short wavelength imaging

Country Status (1)

Country Link
WO (1) WO2002021213A2 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU2002254232A1 (en) 2001-03-22 2002-10-08 Shipley Company, L.L.C. Photoresist composition
US6919160B2 (en) 2003-02-20 2005-07-19 Air Products And Chemicals, Inc. Acrylic compounds for sub-200 nm photoresist compositions and methods for making and using same
JP4326283B2 (en) * 2003-07-10 2009-09-02 セントラル硝子株式会社 Novel polymerizable acrylate compound containing hexafluorocarbinol group and polymer compound using the same
US7138550B2 (en) 2003-08-04 2006-11-21 Air Products And Chemicals, Inc. Bridged carbocyclic compounds and methods of making and using same
US8034534B2 (en) 2006-08-14 2011-10-11 E.I. Du Pont De Nemours And Company Fluorinated polymers for use in immersion lithography

Citations (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3975352A (en) * 1974-08-13 1976-08-17 Eastman Kodak Company Repellent compositions and elements containing the same
JPS61223733A (en) * 1985-03-28 1986-10-04 Daikin Ind Ltd Resist coat
JPS6374054A (en) * 1986-09-18 1988-04-04 Tosoh Corp Developing method for positive type resist
US4752635A (en) * 1985-12-25 1988-06-21 Toyo Soda Manufacturing Co., Ltd. Halogen-containing polyacrylate derivatives
JPS6429837A (en) * 1987-07-27 1989-01-31 Tosoh Corp Method for forming positive resist pattern
EP0304082A2 (en) * 1987-08-20 1989-02-22 Tosoh Corporation Positive resist patterns
JPH0245509A (en) * 1988-08-05 1990-02-15 Tosoh Corp Fluorine-containing polyacrylic acid derivative
JPH0258060A (en) * 1988-08-24 1990-02-27 Toagosei Chem Ind Co Ltd Positive type resist
JPH09325473A (en) * 1996-05-31 1997-12-16 Japan Synthetic Rubber Co Ltd Radiation-sensitive resin composition
WO1999052957A1 (en) * 1998-04-14 1999-10-21 Arch Specialty Chemicals, Inc. Production of acetal derivatized hydroxyl aromatic polymers and their use in radiation sensitive formulations
WO2000017712A1 (en) * 1998-09-23 2000-03-30 E.I. Du Pont De Nemours And Company Photoresists, polymers and processes for microlithography
EP1035441A1 (en) * 1999-03-09 2000-09-13 Matsushita Electric Industrial Co., Ltd. Pattern formation method
EP1103856A1 (en) * 1999-11-29 2001-05-30 Central Glass Company, Limited Positive resist composition & process for forming resist pattern using same
EP1126322A2 (en) * 2000-02-16 2001-08-22 Shin-Etsu Chemical Co., Ltd. Fluorine-containing polymers, resist compositions and patterning process
EP1164434A2 (en) * 2000-06-16 2001-12-19 JSR Corporation Radiation-sensitive resin composition

Patent Citations (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3975352A (en) * 1974-08-13 1976-08-17 Eastman Kodak Company Repellent compositions and elements containing the same
JPS61223733A (en) * 1985-03-28 1986-10-04 Daikin Ind Ltd Resist coat
US4752635A (en) * 1985-12-25 1988-06-21 Toyo Soda Manufacturing Co., Ltd. Halogen-containing polyacrylate derivatives
JPS6374054A (en) * 1986-09-18 1988-04-04 Tosoh Corp Developing method for positive type resist
JPS6429837A (en) * 1987-07-27 1989-01-31 Tosoh Corp Method for forming positive resist pattern
EP0304082A2 (en) * 1987-08-20 1989-02-22 Tosoh Corporation Positive resist patterns
JPH0245509A (en) * 1988-08-05 1990-02-15 Tosoh Corp Fluorine-containing polyacrylic acid derivative
JPH0258060A (en) * 1988-08-24 1990-02-27 Toagosei Chem Ind Co Ltd Positive type resist
JPH09325473A (en) * 1996-05-31 1997-12-16 Japan Synthetic Rubber Co Ltd Radiation-sensitive resin composition
WO1999052957A1 (en) * 1998-04-14 1999-10-21 Arch Specialty Chemicals, Inc. Production of acetal derivatized hydroxyl aromatic polymers and their use in radiation sensitive formulations
WO2000017712A1 (en) * 1998-09-23 2000-03-30 E.I. Du Pont De Nemours And Company Photoresists, polymers and processes for microlithography
EP1035441A1 (en) * 1999-03-09 2000-09-13 Matsushita Electric Industrial Co., Ltd. Pattern formation method
EP1103856A1 (en) * 1999-11-29 2001-05-30 Central Glass Company, Limited Positive resist composition & process for forming resist pattern using same
EP1126322A2 (en) * 2000-02-16 2001-08-22 Shin-Etsu Chemical Co., Ltd. Fluorine-containing polymers, resist compositions and patterning process
EP1164434A2 (en) * 2000-06-16 2001-12-19 JSR Corporation Radiation-sensitive resin composition

Non-Patent Citations (8)

* Cited by examiner, † Cited by third party
Title
DATABASE WPI Section Ch Week 199014, Derwent World Patents Index; Class A14, AN 1990-105164, XP002193014 *
OGATA T ET AL: "New Polymer for 157nm Single-Layer Resist Based on Fluorine Cotaining Acryl Copolymer", PROCEEDINGS OF THE SPIE, vol. 4345, 2001, SPIE, BELLINGHAM, VA, US, pages 1048 - 1055, XP008001411 *
PATENT ABSTRACTS OF JAPAN vol. 011, no. 058 (P - 550) 21 February 1987 (1987-02-21) *
PATENT ABSTRACTS OF JAPAN vol. 012, no. 300 (P - 745) 16 August 1988 (1988-08-16) *
PATENT ABSTRACTS OF JAPAN vol. 013, no. 212 (P - 873) 18 May 1989 (1989-05-18) *
PATENT ABSTRACTS OF JAPAN vol. 014, no. 208 (C - 0714) 27 April 1990 (1990-04-27) *
PATENT ABSTRACTS OF JAPAN vol. 1998, no. 04 31 March 1998 (1998-03-31) *
ROITMAN J N ET AL: "Wetting properties of bis(trifluoromethyl)carbinyl acrylates polymers", CHEMICAL ABSTRACTS + INDEXES, AMERICAN CHEMICAL SOCIETY. COLUMBUS, US, vol. 81, no. 20, 18 November 1974 (1974-11-18), XP002168174, ISSN: 0009-2258 *

Also Published As

Publication number Publication date
WO2002021213A2 (en) 2002-03-14

Similar Documents

Publication Publication Date Title
WO2002021212A3 (en) Fluorinated phenolic polymers and photoresist compositions comprising same
DE69726542T2 (en) Chemically reinforced resist composition
EP1128213A3 (en) Photoresist compositions comprising novel copolymers
ES2189609B1 (en) PHOTOSENSIBLE RESIN COMPOSITION.
EP2020618A3 (en) Positive resist composition and method of pattern formation with the same
DE602005014007D1 (en) LIGHT-SENSITIVE RESIN COMPOSITION AND LIGHT-SENSITIVE DRY FILM BY USE THEREOF
EP1426822A4 (en) Composition for forming antireflective film for use in lithography
ATE434202T1 (en) PHOTORESIST COMPOSITION FOR EXPOSURE TO DUV RADIATION
EP0831369A3 (en) Positive photosensitive composition
TW200731006A (en) Radiation-sensitive composition for forming colored layer, and color filter
EP1193558A3 (en) Radiation-sensitive resin composition
EP1703322A3 (en) Positive resist composition and pattern forming method using the resist composition
EP2189845A3 (en) Compositions and processes for photolithography
WO2009054620A3 (en) Alkali-soluble resin and negative-type photosensitive resin composition comprising the same
EP1308781A3 (en) Cyclic sulfonium and sulfoxonium photoacid generators and photoresists containing them
WO2002021213A3 (en) Novel polymers and photoresist compositions for short wavelength imaging
WO2002069043A3 (en) Low absorbing resists for 157 nm lithography
WO2002069039A3 (en) Photoacid generator systems for short wavelength imaging
EP1684119A3 (en) Positive resist composition for immersion exposure and pattern-forming method using the same
TW200708893A (en) Pigment-dispersing type radiation-sensitive resin composition and method of forming colored pattern
WO2002023274A3 (en) Photoresist composition
MY133599A (en) Photosensitive composition
TW199212B (en)
EP1277460A3 (en) Cosmetic compositions with benzoazolyl, benzodiazolyl or benzotriazole sunscreens and dihydroxyacetone (DHA)
EP0364949A3 (en) Heat-stable positive photoresist

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NO NZ PH PL PT RO RU SD SE SG SI SK SL TJ TM TR TT TZ UA UG UZ VN YU ZA ZW

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): GH GM KE LS MW MZ SD SL SZ TZ UG ZW AM AZ BY KG KZ MD RU TJ TM AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG

AK Designated states

Kind code of ref document: A3

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NO NZ PH PL PT RO RU SD SE SG SI SK SL TJ TM TR TT TZ UA UG UZ VN YU ZA ZW

AL Designated countries for regional patents

Kind code of ref document: A3

Designated state(s): GH GM KE LS MW MZ SD SL SZ TZ UG ZW AM AZ BY KG KZ MD RU TJ TM AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG

REG Reference to national code

Ref country code: DE

Ref legal event code: 8642

122 Ep: pct application non-entry in european phase
NENP Non-entry into the national phase

Ref country code: JP

DPE2 Request for preliminary examination filed before expiration of 19th month from priority date (pct application filed from 20040101)