WO2002013268A3 - Baugruppe, insbesondere wafer-baugruppe - Google Patents

Baugruppe, insbesondere wafer-baugruppe Download PDF

Info

Publication number
WO2002013268A3
WO2002013268A3 PCT/DE2001/002758 DE0102758W WO0213268A3 WO 2002013268 A3 WO2002013268 A3 WO 2002013268A3 DE 0102758 W DE0102758 W DE 0102758W WO 0213268 A3 WO0213268 A3 WO 0213268A3
Authority
WO
WIPO (PCT)
Prior art keywords
module
wafer
depression
functional
structured
Prior art date
Application number
PCT/DE2001/002758
Other languages
English (en)
French (fr)
Other versions
WO2002013268A2 (de
Inventor
Klaus Breitschwerdt
Hans Artmann
Wilhelm Frey
Karsten Funk
Juergen Neumann
Original Assignee
Bosch Gmbh Robert
Klaus Breitschwerdt
Hans Artmann
Wilhelm Frey
Karsten Funk
Juergen Neumann
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bosch Gmbh Robert, Klaus Breitschwerdt, Hans Artmann, Wilhelm Frey, Karsten Funk, Juergen Neumann filed Critical Bosch Gmbh Robert
Priority to EP01984504A priority Critical patent/EP1319249A2/de
Priority to JP2002518527A priority patent/JP2004506325A/ja
Priority to US10/343,820 priority patent/US20040084398A1/en
Publication of WO2002013268A2 publication Critical patent/WO2002013268A2/de
Publication of WO2002013268A3 publication Critical patent/WO2002013268A3/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/3205—Shape
    • H01L2224/32057—Shape in side view
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8312—Aligning
    • H01L2224/83136—Aligning involving guiding structures, e.g. spacers or supporting members
    • H01L2224/83138—Aligning involving guiding structures, e.g. spacers or supporting members the guiding structures being at least partially left in the finished device
    • H01L2224/83139—Guiding structures on the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8312—Aligning
    • H01L2224/83136—Aligning involving guiding structures, e.g. spacers or supporting members
    • H01L2224/83138—Aligning involving guiding structures, e.g. spacers or supporting members the guiding structures being at least partially left in the finished device
    • H01L2224/8314—Guiding structures outside the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8312—Aligning
    • H01L2224/83136—Aligning involving guiding structures, e.g. spacers or supporting members
    • H01L2224/83138—Aligning involving guiding structures, e.g. spacers or supporting members the guiding structures being at least partially left in the finished device
    • H01L2224/83141—Guiding structures both on and outside the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8338—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/83385—Shape, e.g. interlocking features
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01023—Vanadium [V]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01052—Tellurium [Te]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01061—Promethium [Pm]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01068—Erbium [Er]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/078—Adhesive characteristics other than chemical
    • H01L2924/07802—Adhesive characteristics other than chemical not being an ohmic electrical conductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/1015—Shape
    • H01L2924/10155—Shape being other than a cuboid
    • H01L2924/10158—Shape being other than a cuboid at the passive surface

Abstract

Die Baugruppe (10) ist insbesondere eine Wafer-Baugruppe und weist zwei gegenüberliegende Funktionselemente (11, 12) auf, die mittels einer zwischenangeordneten, druckverformbaren Verbindungsmittelschicht (13) miteinander wirkverbunden sind. Hierbei ist vorgesehen, dass wenigstens ein Funktionselement (11; 12; 11, 12) unter Ausbildung einer jeweiligen Vertiefung (14) oberflächenstrukturiert ist und die Wirkverbindung ausschliesslich im Bereich der Vertiefung (14) vorliegt.
PCT/DE2001/002758 2000-08-03 2001-07-20 Baugruppe, insbesondere wafer-baugruppe WO2002013268A2 (de)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP01984504A EP1319249A2 (de) 2000-08-03 2001-07-20 Baugruppe, insbesondere wafer-baugruppe
JP2002518527A JP2004506325A (ja) 2000-08-03 2001-07-20 構造群、特にウェーハ構造群
US10/343,820 US20040084398A1 (en) 2000-08-03 2001-07-20 Module, especially a wafer module

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10037821.8 2000-08-03
DE10037821A DE10037821A1 (de) 2000-08-03 2000-08-03 Baugruppe, insbesondere Wafer-Baugruppe

Publications (2)

Publication Number Publication Date
WO2002013268A2 WO2002013268A2 (de) 2002-02-14
WO2002013268A3 true WO2002013268A3 (de) 2002-09-12

Family

ID=7651178

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2001/002758 WO2002013268A2 (de) 2000-08-03 2001-07-20 Baugruppe, insbesondere wafer-baugruppe

Country Status (5)

Country Link
US (1) US20040084398A1 (de)
EP (1) EP1319249A2 (de)
JP (1) JP2004506325A (de)
DE (1) DE10037821A1 (de)
WO (1) WO2002013268A2 (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AUPO902797A0 (en) * 1997-09-05 1997-10-02 Cortronix Pty Ltd A rotary blood pump with hydrodynamically suspended impeller
AUPP995999A0 (en) * 1999-04-23 1999-05-20 University Of Technology, Sydney Non-contact estimation and control system
AUPR514201A0 (en) * 2001-05-21 2001-06-14 Ventrassist Pty Ltd Staged implantation of ventricular assist devices
AU2003904032A0 (en) * 2003-08-04 2003-08-14 Ventracor Limited Improved Transcutaneous Power and Data Transceiver System
CA2541979A1 (en) 2003-10-09 2005-04-14 Ventracor Limited Magnetic driven impeller with hyrodynamic bearing
US20060083642A1 (en) 2004-10-18 2006-04-20 Cook Martin C Rotor stability of a rotary pump
US8152035B2 (en) * 2005-07-12 2012-04-10 Thoratec Corporation Restraining device for a percutaneous lead assembly
US20070142696A1 (en) 2005-12-08 2007-06-21 Ventrassist Pty Ltd Implantable medical devices
US20080133006A1 (en) * 2006-10-27 2008-06-05 Ventrassist Pty Ltd Blood Pump With An Ultrasonic Transducer
US20080200750A1 (en) * 2006-11-17 2008-08-21 Natalie James Polymer encapsulation for medical device
DE102007044806A1 (de) 2007-09-20 2009-04-02 Robert Bosch Gmbh Mikromechanisches Bauelement und Verfahren zur Herstellung eines mikromechanischen Bauelements
TW201217010A (en) 2010-06-22 2012-05-01 Thoratec Corp Apparatus and method for modifying pressure-flow characteristics of a pump
US8905910B2 (en) 2010-06-22 2014-12-09 Thoratec Corporation Fluid delivery system and method for monitoring fluid delivery system
TW201225997A (en) 2010-08-20 2012-07-01 Thoratec Corp Assembly and method for stabilizing a percutaneous cable

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2902002A1 (de) * 1979-01-19 1980-07-31 Gerhard Krause Dreidimensional integrierte elektronische schaltungen
EP0314437A1 (de) * 1987-10-28 1989-05-03 Laser Dynamics, Inc. Halbleiterkristallplättchen-Stapel
JPH04335566A (ja) * 1991-05-10 1992-11-24 Sony Corp 半導体メモリ装置
US5419806A (en) * 1993-02-11 1995-05-30 Siemens Aktiengesellschaft Method for manufacturing a three-dimensional circuit apparatus
EP0735530A1 (de) * 1995-03-31 1996-10-02 Toshiba-Emi Limited Verfahren und Gerät zur Herstellung von verklebten Platten
JPH11345900A (ja) * 1998-05-29 1999-12-14 Toshiba Corp 半導体装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2959493A (en) * 1956-08-23 1960-11-08 Owens Illinois Glass Co Treating sealing edges of glass parts
SE9100392D0 (sv) * 1991-02-08 1991-02-08 Pharmacia Biosensor Ab A method of producing a sealing means in a microfluidic structure and a microfluidic structure comprising such sealing means
FR2751467B1 (fr) * 1996-07-17 1998-10-02 Commissariat Energie Atomique Procede d'assemblage de deux structures et dispositif obtenu par le procede. applications aux microlasers
FR2785449B1 (fr) * 1998-10-29 2002-11-29 Commissariat Energie Atomique Systeme d'assemblage de substrats a zones d'accrochage pourvues de cavites
US6406636B1 (en) * 1999-06-02 2002-06-18 Megasense, Inc. Methods for wafer to wafer bonding using microstructures

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2902002A1 (de) * 1979-01-19 1980-07-31 Gerhard Krause Dreidimensional integrierte elektronische schaltungen
EP0314437A1 (de) * 1987-10-28 1989-05-03 Laser Dynamics, Inc. Halbleiterkristallplättchen-Stapel
JPH04335566A (ja) * 1991-05-10 1992-11-24 Sony Corp 半導体メモリ装置
US5419806A (en) * 1993-02-11 1995-05-30 Siemens Aktiengesellschaft Method for manufacturing a three-dimensional circuit apparatus
EP0735530A1 (de) * 1995-03-31 1996-10-02 Toshiba-Emi Limited Verfahren und Gerät zur Herstellung von verklebten Platten
JPH11345900A (ja) * 1998-05-29 1999-12-14 Toshiba Corp 半導体装置

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 017, no. 183 (E - 1348) 9 April 1993 (1993-04-09) *
PATENT ABSTRACTS OF JAPAN vol. 2000, no. 03 30 March 2000 (2000-03-30) *

Also Published As

Publication number Publication date
DE10037821A1 (de) 2002-02-21
EP1319249A2 (de) 2003-06-18
WO2002013268A2 (de) 2002-02-14
US20040084398A1 (en) 2004-05-06
JP2004506325A (ja) 2004-02-26

Similar Documents

Publication Publication Date Title
WO2002013268A3 (de) Baugruppe, insbesondere wafer-baugruppe
WO2002063656A3 (en) Chemical monolayer and micro-electronic junctions and devices containing same
WO2002056809A3 (en) Controlled delamination of laminate structures having enclosed discrete regions of a material
WO2003050202A8 (en) A method of forming a composite
WO2004099068A3 (en) Nanofiber surfaces for use in enhanced surface area applications
WO1999056954A8 (en) Methods of fabricating polymeric structures incorporating microscale fluidic elements
WO2003025346A3 (en) Drain sealing device
CA2380184A1 (en) Structural members and fixing clip therefore
WO2003072803A3 (en) Nanostructures containing antibody assembly units
WO2005122285A3 (en) Methods and devices for fabricating and assembling printable semiconductor elements
WO2006023894A3 (en) Semiconductor processing components and semiconductor processing utilizing same
WO2002053363A3 (en) Flexible laminate structures having enclosed discrete regions of a material
WO2006084177A3 (en) Nested integrated circuit package on package system
WO2005067848A3 (en) Method for bonding surfaces on a web
WO2004082918A3 (en) Composite webs and closure systems
WO2003087489A3 (en) Perforated decking
WO2003032456A3 (de) Vorrichtung und anordnung zur befestigung eines profilteils an einer tragschiene
USD533738S1 (en) Display portion
WO2001080880A3 (de) Apoptotika
WO2006047156A3 (en) Bi-material cantilevers with flipped over material sections and structures formed therefrom
WO1999021175A3 (en) Integrated circuit layout methods and layout structures
DE59814220D1 (de) Durch feldeffekt steuerbares halbleiterbauelement
WO2003021680A3 (de) Leistungshalbleitermodul
EP1369485A4 (de) Glucose-dehydrogenase
USD481805S1 (en) Garland light set section

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): JP US

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE TR

121 Ep: the epo has been informed by wipo that ep was designated in this application
DFPE Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101)
WWE Wipo information: entry into national phase

Ref document number: 2001984504

Country of ref document: EP

WWE Wipo information: entry into national phase

Ref document number: 2002518527

Country of ref document: JP

WWP Wipo information: published in national office

Ref document number: 2001984504

Country of ref document: EP

WWE Wipo information: entry into national phase

Ref document number: 10343820

Country of ref document: US