WO2002010858A3 - Process for manufacturing a microelectronic device - Google Patents

Process for manufacturing a microelectronic device Download PDF

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Publication number
WO2002010858A3
WO2002010858A3 PCT/EP2001/008391 EP0108391W WO0210858A3 WO 2002010858 A3 WO2002010858 A3 WO 2002010858A3 EP 0108391 W EP0108391 W EP 0108391W WO 0210858 A3 WO0210858 A3 WO 0210858A3
Authority
WO
WIPO (PCT)
Prior art keywords
manufacturing
microelectronic device
shrink material
photoresist image
removal solution
Prior art date
Application number
PCT/EP2001/008391
Other languages
French (fr)
Other versions
WO2002010858A2 (en
Inventor
Ralph R Dammel
Ronald J Eakin
Mark A Spak
Original Assignee
Clariant Int Ltd
Clariant Finance Bvi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Clariant Int Ltd, Clariant Finance Bvi Ltd filed Critical Clariant Int Ltd
Priority to JP2002515525A priority Critical patent/JP2004505319A/en
Priority to EP01949500A priority patent/EP1307785A2/en
Priority to KR10-2003-7000899A priority patent/KR20030043914A/en
Publication of WO2002010858A2 publication Critical patent/WO2002010858A2/en
Publication of WO2002010858A3 publication Critical patent/WO2002010858A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/322—Aqueous alkaline compositions

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

The present invention relates to a process for manufacturing a microelectronic device, comprising providing a substrate with a photoresist image, coating the photoresist image with a shrink material, insolubilizing a portion of the shrink material in contact with the photoresist image, removing a portion of the shrink material which is not insolubilized with a removal solution, further where the removal solution comprises an aqueous solution of a surfactant.
PCT/EP2001/008391 2000-07-31 2001-07-20 Process for manufacturing a microelectronic device WO2002010858A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2002515525A JP2004505319A (en) 2000-07-31 2001-07-20 Manufacturing method of microelectronic device
EP01949500A EP1307785A2 (en) 2000-07-31 2001-07-20 Process for manufacturing a microelectronic device
KR10-2003-7000899A KR20030043914A (en) 2000-07-31 2001-07-20 Process for manufacturing a microelectronic device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US62927900A 2000-07-31 2000-07-31
US09/629,279 2000-07-31

Publications (2)

Publication Number Publication Date
WO2002010858A2 WO2002010858A2 (en) 2002-02-07
WO2002010858A3 true WO2002010858A3 (en) 2002-08-08

Family

ID=24522328

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2001/008391 WO2002010858A2 (en) 2000-07-31 2001-07-20 Process for manufacturing a microelectronic device

Country Status (6)

Country Link
EP (1) EP1307785A2 (en)
JP (1) JP2004505319A (en)
KR (1) KR20030043914A (en)
CN (1) CN1564969A (en)
TW (1) TW536734B (en)
WO (1) WO2002010858A2 (en)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3850767B2 (en) 2002-07-25 2006-11-29 富士通株式会社 Resist pattern thickening material, resist pattern and manufacturing method thereof, and semiconductor device and manufacturing method thereof
JP3850772B2 (en) * 2002-08-21 2006-11-29 富士通株式会社 Resist pattern thickening material, resist pattern manufacturing method, and semiconductor device manufacturing method
JP3850781B2 (en) * 2002-09-30 2006-11-29 富士通株式会社 Resist pattern thickening material, resist pattern forming method, and semiconductor device manufacturing method
SI2017265T1 (en) * 2003-06-12 2011-09-30 Abbott Lab Fused compounds that inhibit vanilloid receptor subtype 1 (VR1) receptor
WO2005013011A1 (en) 2003-08-04 2005-02-10 Fujitsu Limited Material for thickening resist pattern, method for producing resist pattern using same, and method for manufacturing semiconductor device
JP4531726B2 (en) * 2006-06-22 2010-08-25 Ａｚエレクトロニックマテリアルズ株式会社 Method for forming miniaturized resist pattern
CN106249540A (en) * 2015-06-03 2016-12-21 陶氏环球技术有限责任公司 Pattern treatment method
TWI617900B (en) * 2015-06-03 2018-03-11 羅門哈斯電子材料有限公司 Pattern treatment methods
WO2019060570A1 (en) * 2017-09-22 2019-03-28 Tokyo Electron Limited Methods for sensitizing photoresist using flood exposures
JP2019078810A (en) * 2017-10-20 2019-05-23 メルク、パテント、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツングＭｅｒｃｋ Ｐａｔｅｎｔ ＧｍｂＨ Method for producing fine pattern and method for manufacturing display element using the same
JP2019078812A (en) * 2017-10-20 2019-05-23 メルク、パテント、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツングＭｅｒｃｋ Ｐａｔｅｎｔ ＧｍｂＨ Method for manufacturing high definition pattern and method for manufacturing display element using the same
KR102011879B1 (en) * 2018-12-28 2019-08-20 영창케미칼 주식회사 Pross liquid for extreme ultraviolet lithography and pattern formation mehtod using the same

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19814142A1 (en) * 1997-03-31 1998-10-15 Mitsubishi Electric Corp Material for forming fine pattern in semiconductor manufacture
US5858620A (en) * 1996-07-05 1999-01-12 Mitsubishi Denki Kabushiki Kaisha Semiconductor device and method for manufacturing the same
EP0920852A2 (en) * 1997-11-18 1999-06-09 Takasago International Corporation Keratin fiber strengthening agent and method for strengthening keratin fiber
DE19843179A1 (en) * 1998-01-09 1999-07-22 Mitsubishi Electric Corp Production of semiconductor device especially with very fine pattern
DE19915899A1 (en) * 1998-08-06 2000-02-17 Mitsubishi Electric Corp Production of a semiconductor device used in the manufacture of LSI semiconductors and liquid crystal displays comprises a multistep process forming a hyperfine pattern on the semiconductor base component
JP2000138150A (en) * 1998-10-30 2000-05-16 Japan Organo Co Ltd Method and device for collecting and reusing developer from waste photoresist developer
DE10014083A1 (en) * 1999-08-26 2001-03-22 Mitsubishi Electric Corp Production of a semiconductor device comprises forming a first resist layer on a semiconductor base layer, forming a resist pattern, forming a second resist layer, forming a crosslinked layer
WO2001025854A1 (en) * 1999-10-05 2001-04-12 Clariant International Ltd. Method for forming pattern

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5858620A (en) * 1996-07-05 1999-01-12 Mitsubishi Denki Kabushiki Kaisha Semiconductor device and method for manufacturing the same
DE19814142A1 (en) * 1997-03-31 1998-10-15 Mitsubishi Electric Corp Material for forming fine pattern in semiconductor manufacture
EP0920852A2 (en) * 1997-11-18 1999-06-09 Takasago International Corporation Keratin fiber strengthening agent and method for strengthening keratin fiber
DE19843179A1 (en) * 1998-01-09 1999-07-22 Mitsubishi Electric Corp Production of semiconductor device especially with very fine pattern
US6319853B1 (en) * 1998-01-09 2001-11-20 Mitsubishi Denki Kabushiki Kaisha Method of manufacturing a semiconductor device using a minute resist pattern, and a semiconductor device manufactured thereby
DE19915899A1 (en) * 1998-08-06 2000-02-17 Mitsubishi Electric Corp Production of a semiconductor device used in the manufacture of LSI semiconductors and liquid crystal displays comprises a multistep process forming a hyperfine pattern on the semiconductor base component
JP2000138150A (en) * 1998-10-30 2000-05-16 Japan Organo Co Ltd Method and device for collecting and reusing developer from waste photoresist developer
US20010003481A1 (en) * 1998-10-30 2001-06-14 Hiroshi Sugawara Process and equipment for recovering developer from photoresist development waste and reusing it
DE10014083A1 (en) * 1999-08-26 2001-03-22 Mitsubishi Electric Corp Production of a semiconductor device comprises forming a first resist layer on a semiconductor base layer, forming a resist pattern, forming a second resist layer, forming a crosslinked layer
WO2001025854A1 (en) * 1999-10-05 2001-04-12 Clariant International Ltd. Method for forming pattern

Also Published As

Publication number Publication date
JP2004505319A (en) 2004-02-19
WO2002010858A2 (en) 2002-02-07
CN1564969A (en) 2005-01-12
KR20030043914A (en) 2003-06-02
EP1307785A2 (en) 2003-05-07
TW536734B (en) 2003-06-11

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