WO2002045113A1 - Pattern forming method for carbon nanotube, and field emission cold cathode and method of manufacturing the cold cathode - Google Patents

Pattern forming method for carbon nanotube, and field emission cold cathode and method of manufacturing the cold cathode Download PDF

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Publication number
WO2002045113A1
WO2002045113A1 PCT/JP2001/010276 JP0110276W WO0245113A1 WO 2002045113 A1 WO2002045113 A1 WO 2002045113A1 JP 0110276 W JP0110276 W JP 0110276W WO 0245113 A1 WO0245113 A1 WO 0245113A1
Authority
WO
WIPO (PCT)
Prior art keywords
carbon nanotube
method
cold cathode
pattern
pattern forming
Prior art date
Application number
PCT/JP2001/010276
Other languages
French (fr)
Inventor
Fuminori Ito
Yuko Okada
Yoshinori Tomihari
Kazuo Konuma
Akihiko Okamoto
Original Assignee
Nec Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP2000-362395 priority Critical
Priority to JP2000362395A priority patent/JP4802363B2/en
Priority to JP2000367341 priority
Priority to JP2000-367341 priority
Priority to JP2001337441A priority patent/JP3843447B2/en
Priority to JP2001-337441 priority
Application filed by Nec Corporation filed Critical Nec Corporation
Priority claimed from US10/433,382 external-priority patent/US20040043219A1/en
Publication of WO2002045113A1 publication Critical patent/WO2002045113A1/en

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J3/00Details of electron-optical or ion-optical arrangements or of ion traps common to two or more basic types of discharge tubes or lamps
    • H01J3/02Electron guns
    • H01J3/021Electron guns using a field emission, photo emission, or secondary emission electron source
    • H01J3/022Electron guns using a field emission, photo emission, or secondary emission electron source with microengineered cathode, e.g. Spindt-type
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02Manufacture of electrodes or electrode systems
    • H01J9/022Manufacture of electrodes or electrode systems of cold cathodes
    • H01J9/025Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00Electrodes common to discharge tubes
    • H01J2201/30Cold cathodes
    • H01J2201/304Field emission cathodes
    • H01J2201/30446Field emission cathodes characterised by the emitter material
    • H01J2201/30453Carbon types
    • H01J2201/30469Carbon nanotubes (CNTs)
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2329/00Electron emission display panels, e.g. field emission display panels

Abstract

A pattern forming method for carbon nanotube (106) capable of forming a pattern by wet-etching a carbon nano-tube (106) by a transfer method, comprising the steps of using a solution dissolving a binder used for the transfer method as a solution used for wet etching and, during the wet etching, rubbing off the entwined carbon nanotube (106) with cloth-like substance (112); a pattern forming method for carbon nanotube (106) capable of forming a pattern by using a dry etching method, comprising the step of using, as a mask, a metal film or the film of a substance not damaged at the time of dry-etching and not damaging the carbon nanotube (106) at the time of removal, whereby a fine carbon nanotube pattern with excellent flatness can be formed.
PCT/JP2001/010276 2000-11-29 2001-11-26 Pattern forming method for carbon nanotube, and field emission cold cathode and method of manufacturing the cold cathode WO2002045113A1 (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2000-362395 2000-11-29
JP2000362395A JP4802363B2 (en) 2000-11-29 2000-11-29 Field emission cold cathode and flat image display device
JP2000367341 2000-12-01
JP2000-367341 2000-12-01
JP2001-337441 2001-11-02
JP2001337441A JP3843447B2 (en) 2000-12-01 2001-11-02 Carbon nanotube pattern formation method

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2003-7007245A KR20030059291A (en) 2000-11-29 2001-11-26 Pattern forming method for carbon nanotube, and field emission cold cathode and method of manufacturing the cold cathode
US10/433,382 US20040043219A1 (en) 2000-11-29 2001-11-26 Pattern forming method for carbon nanotube, and field emission cold cathode and method of manufacturing the cold cathode

Publications (1)

Publication Number Publication Date
WO2002045113A1 true WO2002045113A1 (en) 2002-06-06

Family

ID=27345293

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2001/010276 WO2002045113A1 (en) 2000-11-29 2001-11-26 Pattern forming method for carbon nanotube, and field emission cold cathode and method of manufacturing the cold cathode

Country Status (2)

Country Link
KR (1) KR20030059291A (en)
WO (1) WO2002045113A1 (en)

Cited By (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005027226A1 (en) 2003-09-12 2005-03-24 Sony Corporation Method for manufacturing field effect semiconductor device
US7385266B2 (en) 2003-05-14 2008-06-10 Nantero, Inc. Sensor platform using a non-horizontally oriented nanotube element
US7416993B2 (en) 2003-09-08 2008-08-26 Nantero, Inc. Patterned nanowire articles on a substrate and methods of making the same
WO2009023304A2 (en) * 2007-05-02 2009-02-19 Atomate Corporation High density nanotube devices
US7598127B2 (en) 2005-05-12 2009-10-06 Nantero, Inc. Nanotube fuse structure
US7619291B2 (en) 2001-07-25 2009-11-17 Nantero, Inc. Devices having horizontally-disposed nanofabric articles and methods of making the same
US7719067B2 (en) 2001-07-25 2010-05-18 Nantero, Inc. Devices having vertically-disposed nanofabric articles and methods of making the same
US7835170B2 (en) 2005-05-09 2010-11-16 Nantero, Inc. Memory elements and cross point switches and arrays of same using nonvolatile nanotube blocks
US7859385B2 (en) 2004-09-21 2010-12-28 Nantero, Inc. Resistive elements using carbon nanotubes
US7927992B2 (en) 2005-09-06 2011-04-19 Nantero, Inc. Carbon nanotubes for the selective transfer of heat from electronics
US8044388B2 (en) 2001-07-25 2011-10-25 Nantero, Inc. Method of forming a carbon nanotube-based contact to semiconductor
US8110883B2 (en) 2007-03-12 2012-02-07 Nantero Inc. Electromagnetic and thermal sensors using carbon nanotubes and methods of making same
US8115187B2 (en) 2007-05-22 2012-02-14 Nantero, Inc. Triodes using nanofabric articles and methods of making the same
US8222704B2 (en) 2009-12-31 2012-07-17 Nantero, Inc. Compact electrical switching devices with nanotube elements, and methods of making same
US8351239B2 (en) 2009-10-23 2013-01-08 Nantero Inc. Dynamic sense current supply circuit and associated method for reading and characterizing a resistive memory array
US8525143B2 (en) 2005-09-06 2013-09-03 Nantero Inc. Method and system of using nanotube fabrics as joule heating elements for memories and other applications
US8551806B2 (en) 2009-10-23 2013-10-08 Nantero Inc. Methods for passivating a carbonic nanolayer
US8562937B2 (en) 2005-12-19 2013-10-22 Nantero Inc. Production of carbon nanotubes
US8587989B2 (en) 2008-06-20 2013-11-19 Nantero Inc. NRAM arrays with nanotube blocks, nanotube traces, and nanotube planes and methods of making same
US8586424B2 (en) 2008-11-19 2013-11-19 Nantero Inc. Switching materials comprising mixed nanoscopic particles and carbon nanotubes and method of making and using the same
US8631562B2 (en) 2004-11-02 2014-01-21 Nantero Inc. Methods of making nanotube switches
US8771628B2 (en) 2004-12-16 2014-07-08 Nantero Inc. Aqueous carbon nanotube applicator liquids and methods for producing applicator liquids thereof
US8895950B2 (en) 2009-10-23 2014-11-25 Nantero Inc. Methods for passivating a carbonic nanolayer
US8941094B2 (en) 2010-09-02 2015-01-27 Nantero Inc. Methods for adjusting the conductivity range of a nanotube fabric layer
US9196615B2 (en) 2005-05-09 2015-11-24 Nantero Inc. Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
US9287356B2 (en) 2005-05-09 2016-03-15 Nantero Inc. Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
US9299430B1 (en) 2015-01-22 2016-03-29 Nantero Inc. Methods for reading and programming 1-R resistive change element arrays
US9422651B2 (en) 2003-01-13 2016-08-23 Nantero Inc. Methods for arranging nanoscopic elements within networks, fabrics, and films
US9617151B2 (en) 2010-02-12 2017-04-11 Nantero Inc. Methods for controlling density, porosity, and/or gap size within nanotube fabric layers and films
US9650732B2 (en) 2013-05-01 2017-05-16 Nantero Inc. Low defect nanotube application solutions and fabrics and methods for making same
US9911743B2 (en) 2005-05-09 2018-03-06 Nantero, Inc. Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
US9934848B2 (en) 2016-06-07 2018-04-03 Nantero, Inc. Methods for determining the resistive states of resistive change elements
US9941001B2 (en) 2016-06-07 2018-04-10 Nantero, Inc. Circuits for determining the resistive states of resistive change elements
US10096363B2 (en) 2001-07-25 2018-10-09 Nantero, Inc. Methods of forming nanotube films and articles

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100816815B1 (en) * 2007-02-09 2008-03-26 주식회사 나모텍 Substrate for display device using carbon nanotube and method for manufacturing the same
KR100924766B1 (en) * 2007-06-22 2009-11-05 삼성전자주식회사 Carbon nano-tubeCNT thin film comprising a metal nano-particle, and a manufacturing method thereof

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999028939A1 (en) * 1997-12-04 1999-06-10 Printable Field Emitters Limited Field electron emission materials and devices
JP2000277002A (en) * 1999-03-25 2000-10-06 Matsushita Electric Ind Co Ltd Manufacture of electron emission element
JP2000285795A (en) * 1999-03-31 2000-10-13 Sony Corp Electron emission source, its manufacture, and display device
JP2000311578A (en) * 1999-04-28 2000-11-07 Sharp Corp Electron source array, its manufacture, and image forming device formed by using electron source array or its manufacture
EP1096533A1 (en) * 1999-08-18 2001-05-02 Lucent Technologies Inc. Method for fabrication of patterned carbon nanotube films

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999028939A1 (en) * 1997-12-04 1999-06-10 Printable Field Emitters Limited Field electron emission materials and devices
JP2000277002A (en) * 1999-03-25 2000-10-06 Matsushita Electric Ind Co Ltd Manufacture of electron emission element
JP2000285795A (en) * 1999-03-31 2000-10-13 Sony Corp Electron emission source, its manufacture, and display device
JP2000311578A (en) * 1999-04-28 2000-11-07 Sharp Corp Electron source array, its manufacture, and image forming device formed by using electron source array or its manufacture
EP1096533A1 (en) * 1999-08-18 2001-05-02 Lucent Technologies Inc. Method for fabrication of patterned carbon nanotube films

Cited By (55)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7619291B2 (en) 2001-07-25 2009-11-17 Nantero, Inc. Devices having horizontally-disposed nanofabric articles and methods of making the same
US10096363B2 (en) 2001-07-25 2018-10-09 Nantero, Inc. Methods of forming nanotube films and articles
US8400053B2 (en) 2001-07-25 2013-03-19 Nantero Inc. Carbon nanotube films, layers, fabrics, ribbons, elements and articles
US8058089B2 (en) 2001-07-25 2011-11-15 Nantero Inc. Electromechanical memory array using nanotube ribbons and method for making same
US8044388B2 (en) 2001-07-25 2011-10-25 Nantero, Inc. Method of forming a carbon nanotube-based contact to semiconductor
US7719067B2 (en) 2001-07-25 2010-05-18 Nantero, Inc. Devices having vertically-disposed nanofabric articles and methods of making the same
US10124367B2 (en) 2003-01-13 2018-11-13 Nantero, Inc. Methods for arranging nanoscopic elements within networks, fabrics and films
US9422651B2 (en) 2003-01-13 2016-08-23 Nantero Inc. Methods for arranging nanoscopic elements within networks, fabrics, and films
US7538400B2 (en) 2003-05-14 2009-05-26 Nantero, Inc. Sensor platform using a non-horizontally oriented nanotube element
US7385266B2 (en) 2003-05-14 2008-06-10 Nantero, Inc. Sensor platform using a non-horizontally oriented nanotube element
US8357559B2 (en) 2003-05-14 2013-01-22 Nantero Inc. Method of making sensor platform using a non-horizontally oriented nanotube element
US7948082B2 (en) 2003-09-08 2011-05-24 Nantero, Inc. Method of fabricating a patterned nanoscopic article
US7416993B2 (en) 2003-09-08 2008-08-26 Nantero, Inc. Patterned nanowire articles on a substrate and methods of making the same
WO2005027226A1 (en) 2003-09-12 2005-03-24 Sony Corporation Method for manufacturing field effect semiconductor device
EP1667238A1 (en) * 2003-09-12 2006-06-07 Sony Corporation Method for manufacturing field effect semiconductor device
EP1667238A4 (en) * 2003-09-12 2009-09-16 Sony Corp Method for manufacturing field effect semiconductor device
US7859385B2 (en) 2004-09-21 2010-12-28 Nantero, Inc. Resistive elements using carbon nanotubes
US8631562B2 (en) 2004-11-02 2014-01-21 Nantero Inc. Methods of making nanotube switches
US8771628B2 (en) 2004-12-16 2014-07-08 Nantero Inc. Aqueous carbon nanotube applicator liquids and methods for producing applicator liquids thereof
US10339982B2 (en) 2005-05-09 2019-07-02 Nantero, Inc. Memory elements and cross point switches and arrays of same using nonvolatile nanotube blocks
US9767902B2 (en) 2005-05-09 2017-09-19 Nantero, Inc. Non-volatile composite nanoscopic fabric NAND memory arrays and methods of making same
US9287356B2 (en) 2005-05-09 2016-03-15 Nantero Inc. Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
US7835170B2 (en) 2005-05-09 2010-11-16 Nantero, Inc. Memory elements and cross point switches and arrays of same using nonvolatile nanotube blocks
US9911743B2 (en) 2005-05-09 2018-03-06 Nantero, Inc. Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
US9196615B2 (en) 2005-05-09 2015-11-24 Nantero Inc. Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
US9406349B2 (en) 2005-05-09 2016-08-02 Nantero Inc. Memory elements and cross point switches and arrays for same using nonvolatile nanotube blocks
US7598127B2 (en) 2005-05-12 2009-10-06 Nantero, Inc. Nanotube fuse structure
US7927992B2 (en) 2005-09-06 2011-04-19 Nantero, Inc. Carbon nanotubes for the selective transfer of heat from electronics
US8630091B2 (en) 2005-09-06 2014-01-14 Nantero Inc. Carbon nanotubes for the selective transfer of heat from electronics
US8525143B2 (en) 2005-09-06 2013-09-03 Nantero Inc. Method and system of using nanotube fabrics as joule heating elements for memories and other applications
US8562937B2 (en) 2005-12-19 2013-10-22 Nantero Inc. Production of carbon nanotubes
US8110883B2 (en) 2007-03-12 2012-02-07 Nantero Inc. Electromagnetic and thermal sensors using carbon nanotubes and methods of making same
WO2009023304A3 (en) * 2007-05-02 2009-07-09 Atomate Corp High density nanotube devices
WO2009023304A2 (en) * 2007-05-02 2009-02-19 Atomate Corporation High density nanotube devices
US8115187B2 (en) 2007-05-22 2012-02-14 Nantero, Inc. Triodes using nanofabric articles and methods of making the same
US8587989B2 (en) 2008-06-20 2013-11-19 Nantero Inc. NRAM arrays with nanotube blocks, nanotube traces, and nanotube planes and methods of making same
US10181569B2 (en) 2008-11-19 2019-01-15 Nantero, Inc. Two-terminal switching devices comprising coated nanotube elements
US9755170B2 (en) 2008-11-19 2017-09-05 Nantero, Inc. Resistive materials comprising mixed nanoscopic particles and carbon nanotubes
US9337423B2 (en) 2008-11-19 2016-05-10 Nantero Inc. Two-terminal switching device using a composite material of nanoscopic particles and carbon nanotubes
US8969142B2 (en) 2008-11-19 2015-03-03 Nantero Inc. Switching materials comprising mixed nanoscopic particles and carbon nanotubes and methods of making and using the same
US8586424B2 (en) 2008-11-19 2013-11-19 Nantero Inc. Switching materials comprising mixed nanoscopic particles and carbon nanotubes and method of making and using the same
US9281185B2 (en) 2009-10-23 2016-03-08 Nantero Inc. Methods for passivating a carbonic nanolayer
US8351239B2 (en) 2009-10-23 2013-01-08 Nantero Inc. Dynamic sense current supply circuit and associated method for reading and characterizing a resistive memory array
US8551806B2 (en) 2009-10-23 2013-10-08 Nantero Inc. Methods for passivating a carbonic nanolayer
US10084138B2 (en) 2009-10-23 2018-09-25 Nantero, Inc. Methods for forming nanotube fabric layers with increased density
US8895950B2 (en) 2009-10-23 2014-11-25 Nantero Inc. Methods for passivating a carbonic nanolayer
US9502675B2 (en) 2009-10-23 2016-11-22 Nantero Inc. Methods for passivating a carbonic nanolayer
US8222704B2 (en) 2009-12-31 2012-07-17 Nantero, Inc. Compact electrical switching devices with nanotube elements, and methods of making same
US9617151B2 (en) 2010-02-12 2017-04-11 Nantero Inc. Methods for controlling density, porosity, and/or gap size within nanotube fabric layers and films
US8941094B2 (en) 2010-09-02 2015-01-27 Nantero Inc. Methods for adjusting the conductivity range of a nanotube fabric layer
US9650732B2 (en) 2013-05-01 2017-05-16 Nantero Inc. Low defect nanotube application solutions and fabrics and methods for making same
US9715927B2 (en) 2015-01-22 2017-07-25 Nantero, Inc. 1-R resistive change element arrays using resistive reference elements
US9299430B1 (en) 2015-01-22 2016-03-29 Nantero Inc. Methods for reading and programming 1-R resistive change element arrays
US9941001B2 (en) 2016-06-07 2018-04-10 Nantero, Inc. Circuits for determining the resistive states of resistive change elements
US9934848B2 (en) 2016-06-07 2018-04-03 Nantero, Inc. Methods for determining the resistive states of resistive change elements

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