WO2002010485A1 - Method for manufacturing semiconductor single crystal and apparatus for manufacturing semiconductor single crystal - Google Patents

Method for manufacturing semiconductor single crystal and apparatus for manufacturing semiconductor single crystal Download PDF

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Publication number
WO2002010485A1
WO2002010485A1 PCT/JP2001/006499 JP0106499W WO0210485A1 WO 2002010485 A1 WO2002010485 A1 WO 2002010485A1 JP 0106499 W JP0106499 W JP 0106499W WO 0210485 A1 WO0210485 A1 WO 0210485A1
Authority
WO
WIPO (PCT)
Prior art keywords
single crystal
manufacturing semiconductor
semiconductor single
silicon single
crucible
Prior art date
Application number
PCT/JP2001/006499
Other languages
French (fr)
Japanese (ja)
Inventor
Kouzou Yokota
Seiichiro Otsuka
Yasushi Nakamura
Original Assignee
Shin-Etsu Handotai Co.,Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin-Etsu Handotai Co.,Ltd. filed Critical Shin-Etsu Handotai Co.,Ltd.
Priority to JP2002516395A priority Critical patent/JP3781300B2/en
Publication of WO2002010485A1 publication Critical patent/WO2002010485A1/en

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
    • C30B15/305—Stirring of the melt

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

A method for manufacturing a homogeneous silicon single crystal having a large diameter and containing oxygen at low concentration, wherein even if the amount of melt in a crucible varies, the center of the magnetic field can be always kept in the most adequate position in the melt with respect to convection suppression. In the method for manufacturing a silicon single crystal (8) by the MCZ method, when a crucible (7) is raised for keeping the liquid level as the pull-up amount of silicon single crystal (8) increases, a magnet (2) is raised to follow up the crucible (7), whereby the magnetic field can be always maintained in the most adequate position with respect to convection suppression, and thus a homogeneous silicon single crystal of low oxygen concentration can be easily manufactured.
PCT/JP2001/006499 2000-07-28 2001-07-27 Method for manufacturing semiconductor single crystal and apparatus for manufacturing semiconductor single crystal WO2002010485A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002516395A JP3781300B2 (en) 2000-07-28 2001-07-27 Semiconductor single crystal manufacturing method and semiconductor single crystal manufacturing apparatus

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2000229883 2000-07-28
JP2000-229883 2000-07-28

Publications (1)

Publication Number Publication Date
WO2002010485A1 true WO2002010485A1 (en) 2002-02-07

Family

ID=18722927

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2001/006499 WO2002010485A1 (en) 2000-07-28 2001-07-27 Method for manufacturing semiconductor single crystal and apparatus for manufacturing semiconductor single crystal

Country Status (2)

Country Link
JP (1) JP3781300B2 (en)
WO (1) WO2002010485A1 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004025001A1 (en) * 2002-09-13 2004-03-25 Shin-Etsu Handotai Co.,Ltd. Single crystal, single crystal wafer, epitaxial wafer and method of growing single crystal
JP2008169109A (en) * 2008-01-18 2008-07-24 Shin Etsu Handotai Co Ltd Single crystal, single crystal wafer and epitaxial wafer
JP2008214118A (en) * 2007-03-01 2008-09-18 Shin Etsu Handotai Co Ltd Method for manufacturing semiconductor single crystal
EP2031100A1 (en) * 2007-06-08 2009-03-04 Siltronic AG Manufacturing method of single crystal
US8795432B2 (en) 2007-05-30 2014-08-05 Sumco Corporation Apparatus for pulling silicon single crystal

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000109390A (en) * 1998-10-02 2000-04-18 Mitsubishi Materials Silicon Corp Production of single crystal
JP2000191393A (en) * 1998-12-25 2000-07-11 Toshiba Ceramics Co Ltd Magnet lifting mechanism for apparatus for pulling up single crystal

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000109390A (en) * 1998-10-02 2000-04-18 Mitsubishi Materials Silicon Corp Production of single crystal
JP2000191393A (en) * 1998-12-25 2000-07-11 Toshiba Ceramics Co Ltd Magnet lifting mechanism for apparatus for pulling up single crystal

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004025001A1 (en) * 2002-09-13 2004-03-25 Shin-Etsu Handotai Co.,Ltd. Single crystal, single crystal wafer, epitaxial wafer and method of growing single crystal
US7396405B2 (en) 2002-09-13 2008-07-08 Shin-Etsu Handotai Co., Ltd. Single crystal, single crystal wafer, epitaxial wafer, and method of growing single crystal
JP2008214118A (en) * 2007-03-01 2008-09-18 Shin Etsu Handotai Co Ltd Method for manufacturing semiconductor single crystal
US8795432B2 (en) 2007-05-30 2014-08-05 Sumco Corporation Apparatus for pulling silicon single crystal
EP2031100A1 (en) * 2007-06-08 2009-03-04 Siltronic AG Manufacturing method of single crystal
US8172943B2 (en) 2007-06-08 2012-05-08 Siltronic Ag Single Crystal manufacturing method
JP2008169109A (en) * 2008-01-18 2008-07-24 Shin Etsu Handotai Co Ltd Single crystal, single crystal wafer and epitaxial wafer

Also Published As

Publication number Publication date
JP3781300B2 (en) 2006-05-31

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