WO2002006844A1 - Arrangement permettant de transmettre des signaux au moyen d'elements de detection magnetoresistifs - Google Patents

Arrangement permettant de transmettre des signaux au moyen d'elements de detection magnetoresistifs Download PDF

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Publication number
WO2002006844A1
WO2002006844A1 PCT/DE2001/002476 DE0102476W WO0206844A1 WO 2002006844 A1 WO2002006844 A1 WO 2002006844A1 DE 0102476 W DE0102476 W DE 0102476W WO 0206844 A1 WO0206844 A1 WO 0206844A1
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WO
WIPO (PCT)
Prior art keywords
sensor elements
layer
bridge
arrangement according
magnetic
Prior art date
Application number
PCT/DE2001/002476
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German (de)
English (en)
Inventor
Wolfgang Clemens
Michael Vieth
Original Assignee
Siemens Aktiengesellschaft
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Publication date
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Publication of WO2002006844A1 publication Critical patent/WO2002006844A1/fr

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors

Definitions

  • the invention relates to an arrangement for signal transmission with at least one electrical conductor track that generates a magnetic signal field by means of current flow, as well as a plurality of magnetoresistive sensor elements that are connected to the conductor track and are galvanically separated from it, which are connected to a full or partial bridge with two bridge branches.
  • optocouplers are mainly used for galvanically isolated signal transmission in communication and automation technology.
  • an electrical (primary) data signal is given to an input, which is converted into an optical radiation signal by means of a light-emitting diode (LED).
  • LED light-emitting diode
  • This radiation signal is transmitted through an insulating, optically transparent medium to an optical sensor or detector element, where it is converted back into an electrical (secondary) signal.
  • Such a digital information transmission by means of optocouplers is limited in the transmission rate by the limited bandwidth of the optical elements (with approximately 50 MBd corresponding to 25 MHz) and in the design by the limited integrability of the optical elements with silicon technology. Furthermore, the optical elements can only be operated in a temperature range up to a maximum of about 85 ° C. and moreover generally only with operating voltages of at least 5 V.
  • magnetic transmission using Hall probes for example, is also known. Such probes can be used to record all of the signal quantities that generate or influence magnetic fields. For example, a corresponding, potential-free measurement of a current can be found in the book by E. Schrüfer "Electrical Measurement Technology", 6th edition, 1995, Hanser-Verlag Kunststoff, pages 165 to 168.
  • magnetoresistive sensor elements In the field of magnetoelectronics, it is also possible to use magnetoresistive sensor elements to set up so-called magnet couplers, which also enable galvanically isolated data transmission.
  • magnet couplers These also enable galvanically isolated data transmission.
  • the indicated limits of the optocouplers can be significantly exceeded, e.g. with a significantly higher data transfer rate and the possibility of operating corresponding components even at voltages lower than 5 V.
  • Such magnetic couplers are also to be integrated with electronic components of Si technology. Of course, they can also be used for analog current measurement after appropriate adjustment.
  • a corresponding magnetic coupler was proposed with the unpublished DE patent application 100 17 374.8 from 7.4.2000. According to a special embodiment, it contains several magnetoresistive sensor elements connected to form a full or partial bridge with two bridge branches. At least one electrical conductor track generating a magnetic signal field by means of current flow is assigned to these sensor elements.
  • Each sensor element comprises a multilayer system showing an increased magnetoresistive effect, which contains at least one soft magnetic measuring layer, at least one further ferromagnetic layer and at least one non-magnetic intermediate layer arranged in between, the magnetization of the soft magnetic measuring layer seeing one of the preferred axes of the magnetization in the absence of a signal field has a predetermined starting position dependent on this layer.
  • the preferred axis of magnetization is sensor-intrinsic; That is, their imprinting can take place not only through a special layer structure, for example through selection of the material and / or the layer thickness, but also through a certain geometric shape, for example through a predetermined ratio of length to width, and / or through an embossed by an external magnetic field Anisotropy happen. Such anisotropy can be generated either during the manufacturing process or afterwards by a tempering step in a magnetic field.
  • Corresponding magnetocouplers can be operated up to around 150 ° C and can be integrated or combined with components from silicon technology.
  • the multilayer systems of the magnetocoupler can also be designed as magnetoresistive tunnel elements, their non-magnetic intermediate layers then consisting of an electrically insulating material.
  • WO 98/07165 also shows a magnetocoupler which has four sensor elements for current detection, with which a magnetic signal field is to be detected, which is generated by means of current flow 'through a flat coil.
  • the conductor tracks of this flat coil thus extend orthogonally through the 'sensor elements and are electrically against these separately.
  • the sensor elements are each constructed as multi-layer systems with two ferromagnetic layers, which are each separated by an electrically conductive, non-magnetic intermediate layer and are magnetoresistive, anisotropic.
  • the multilayer systems can in particular show the so-called GMR effect.
  • each magnetoresistive sensor element has magnetization with a starting position pointing in the same direction and the conductor track is guided from the two bridge branches via sensor elements such that an alternating sensor element from the first Bridge branch and a sensor element arranged diagonally in the bridge from the second bridge branch is detected and the same current flow direction is given in diagonal sensor elements.
  • the magnetoresistive sensor elements can be anisotropically magnetoresistive (so-called “AMR elements”), giant magnetoresistive (so-called “GMR elements”), tunneling magnetoresistive (so-called “TMR elements”) or colossal magnetoresistive (so-called “CMR elements”) ) (see, for example, the volume “XMR Technologies” (Technology Analysis: Magnetism, Volume 2)) of the VDI Technology Center “Physical Technologies", Düsseldorf (DE) 1997, pages 11 to 46).
  • AMR elements anisotropically magnetoresistive
  • GMR elements giant magnetoresistive
  • TMR elements tunneling magnetoresistive
  • CMR elements colossal magnetoresistive
  • the structure of the bridge arrangement makes it possible to ensure that the sensor elements which have a preferred direction can be magnetized in the same direction and nevertheless changes in resistance with different signs are measured on the individual sensor elements.
  • the advantages of the measures according to the invention can thus be seen in the fact that a simple structure of the signal transmission Support arrangement with its magnetocouplers connected to a full or partial bridge is made possible due to the uniform magnetizations of the sensor elements.
  • each of their sensor elements can comprise a multilayer system which exhibits an increased magnetoresistive effect and contains at least one soft magnetic measuring layer, at least one further ferromagnetic layer and at least one non-magnetic intermediate layer arranged between them.
  • These multilayer systems can form particularly sensitive gantant-magnetoresistive or tunnel-magnetoresistive sensor elements with a hard and a soft magnetic part.
  • the hard magnetic sensor part advantageously needs to be magnetized only once in production, so that the magnetization direction is permanently maintained.
  • the soft magnetic layer can now be easily aligned using an external magnetic field.
  • the electrical resistance of the sensor elements depends on the relative position of the magnetization of the hard and soft magnetic layers. In this case, temperature influences are advantageously reduced in that a bridge arrangement is provided here, sensor elements which are premagnetized antiparallel are connected to one another.
  • the current track can be used for magnetization in a particularly simple manner in order to magnetize and thus align the hard magnetic layers of the sensor elements by means of a correspondingly large current surge.
  • the signal transmission arrangement according to the invention preferably has means for its magnetic shielding against external magnetic interference fields.
  • Appropriate means can in particular on the side of the at least one conductor track facing away from the sensor elements and optionally galvanically separated from it in the form of a soft magnetic layer.
  • Such a layer can advantageously also perform the function of a magnetic mirror with respect to the magnetic field signal caused by the at least one conductor track and can thus contribute to a corresponding signal amplification.
  • the signal transmission arrangement according to the invention can advantageously be used as a current sensor.
  • a current flowing through their electrical conductor track can namely be generated to generate a primary signal field, which is then detected by the magnetoresistive sensor elements and converted into a secondary signal.
  • the signal transmission arrangement according to the invention can be integrated with components of silicon technology.
  • FIG. 1 shows a hard-soft structure of a magnetoresistive sensor element
  • FIG. 2 shows characteristic curves of various suitable sensor elements
  • FIG. 3 shows a bridge formwork according to the prior art
  • FIG. 4 shows characteristic curves that result from the bridge circuit according to FIG. 3
  • Figure 5 shows a cross section through a layer structure of a
  • FIG. 6 a bridge structure of a signal transmission arrangement according to the invention
  • FIG. 7 a cross section through the bridge structure according to FIG. 6,
  • FIG. 8 a suitable bridge structure in the form of a half bridge and
  • FIG. 9 a suitable magnetic shielding against external stray fields.
  • Giant magnetoresistive (GMR) or tunnel magnetoresistive (TMR) sensor elements in the so-called spin valve structure are advantageously used for the signal transmission arrangement according to the invention.
  • a corresponding basic structure of a corresponding sensor element with hard and soft magnetic layers can be seen from the sectional view in FIG. 1.
  • 1 denotes a hard magnetic layer
  • 2 a magnetization direction of this layer
  • 3 a non-magnetic intermediate layer
  • 4 a soft magnetic layer
  • 5 a magnetization direction of this soft magnetic layer
  • 6 an external magnetic field H ex .
  • the hard magnetic layer 1 of the sensor element, generally designated 7 can be a single layer, for example made of Co or a Co alloy, or can also consist of a layer system.
  • Such a layer system can in particular be designed as a so-called artificial antiferromagnet AAF (artificial antiferromagnet) (cf. WO 94/15223), which behaves like a permanent magnet and can also be regarded as a bias layer part.
  • the layer system can also form a natural antiferromagnet NAF with a magnetic layer coupled to it.
  • a combination of both types of layer system is of course also possible.
  • a fari- agnet with a coupled magnetic layer is conceivable instead of the NAF system.
  • the non-magnetic intermediate layer 3 can be a metallic layer in the case of a GMR sensor element. Instead, in the case of a TMR sensor element, it can also consist of an insulating material or a semiconducting material.
  • the soft magnetic layer 4 is only weakly magnetically coupled to the hard magnetic layer 1 or a corresponding layer system or is decoupled from this layer / layer system. Anisotropy may or may not be impressed on the soft magnetic layer. There are different characteristics. Both variants can be used for the sensor elements. The structure shown can of course also be repeated several times in a layer system in order to increase the sensor effect (cf. the aforementioned WO 94/15223 A).
  • FIG. 2 shows typical characteristics of individual sensor elements of the spin valve type with and without anisotropy.
  • the upper diagram a) shows the characteristic (resistance R as a function of the field strength of the external field H ex ) for an uncoupled spin valve system.
  • a hysteresis of the characteristic curve is shown with a remanent magnetization without an external field.
  • the characteristic curve shown in diagram b) below results for an uncoupled spin valve system, the soft magnetic layer (measuring layer) having an impressed anisotropy.
  • Such anisotropy can be generated in a manner known per se by a variety of measures.
  • the characteristic curve is shown in the event that this anisotropy is oriented perpendicular to the magnetization of the hard magnetic layer. Other orientations are of course also possible.
  • FIG. 3 shows a known Wheatstone bridge arrangement of sensor elements 7 ⁇ .
  • a so-called half-bridge construction or partial bridge construction is also possible (cf. DE 196 19 806 AI mentioned).
  • FIG. 5 shows a cross section through a structured integrated layer structure for a current sensor or a magnetocoupler 9 from a bridge circuit of a signal transmission arrangement according to the invention. Representing the magnetoresistive sensor elements of this arrangement, only a single sensor element 7 ⁇ is shown here as an entire layer package.
  • the sensor elements are advantageous by
  • the individual sensor elements are produced by structuring steps.
  • This passivation layer also serves as an insulation layer.
  • the required current conductor tracks 11 are applied thereon, which are structured as illustrated, for example, in FIGS. 6 and 8 below.
  • a current I is sent through the current conductor tracks, the direction of current flow of which is illustrated with the character that is usually used.
  • the desired information is to be transmitted by means of this stream.
  • a magnetic field 12 forms around the current conductor tracks and is now detected by the sensor elements 1. This enables galvanically isolated signal transmission. It now depends on the layer system used and the subsequent evaluation electronics whether the signal is transmitted analog or digital. In the first case there is an analog current sensor, in the second case, for example, a magnetocoupler.
  • FIG. 6 shows an exemplary embodiment of an advantageous course of the path for a current I over a conductor track 11 for a signal transmission arrangement according to the invention in supervision.
  • the sensor elements 7 ⁇ to 7 are connected to form a bridge arrangement B. They can advantageously be formed on a common level of a substrate.
  • the hard magnetic layer is magnetized in the same direction in all sensor elements.
  • the magnetizations m_, l to m4 therefore all point in the same direction. This is a great advantage because the entire wafer can be magnetized homogeneously during production.
  • layer structures can be used, such as exchange bias systems, in which the magnetization has to be carried out in a relatively complex manner, for example with a specific temperature cycle.
  • the current path 11 is guided over the individual sensor elements such that elements adjacent to one another within a current branch ZI or Z2 and sensor elements in the two current branches see an antiparallel magnetic field. That is, each magnetoresistive sensor element 7j. If there is no signal field, the current track has magnetization with a starting position pointing in the same direction.
  • the line should terbahn 11 be guided over the sensor elements from the two bridge branches ZI and Z2 in such a way that a sensor element from the first bridge branch ZI and from the second bridge branch Z2 is detected alternately and thus the same current flow direction is given in diagonal sensor elements of the bridge order B. Consequently, the direction of current flow across the sensor element pairs ⁇ l ⁇ -li and 7 2 -7 3 is the same in each case.
  • a bridge signal as shown in FIG. 4 can also be advantageously achieved by the respective characteristic curves.
  • the structure shown is much simpler than other alternatives, such as are known, for example, as compensation circuits for current sensors.
  • other embodiments than the structure shown in FIG. ⁇ are also possible; it is only important that the current conductor track 11 is guided over the individual sensor elements 7i in such a way that, seen from the electrical side, a bridge arrangement is created which enables a differential measurement.
  • FIG. 7 shows a cross section through the layer structure for a magnetocoupler with a bridge arrangement according to FIG. 6 in a representation corresponding to FIG. 5.
  • the magnetic field 12 of two adjacent parts of the current conductor path 11 through which the same current I flows, but in the opposite direction, is antiparallel to one another.
  • the characteristics of the underlying sensor elements 7 are thus reflected, resulting in a bridge signal.
  • FIG. 8 shows the design of the current path through a current conductor track 11 for a half-bridge structure, a representation corresponding to FIG. 6 being chosen. It may be the case that with certain sensor structures, full-bridge switching is not possible or can only be implemented with great effort.
  • a half-bridge arrangement as shown in FIG. 8 is also suitable here. In this case, only two sensor elements, such as elements 7 2 and 7 3 , lie below the current conductor path 11, while the others are not influenced by their signal field become.
  • the two unaffected sensor elements 7 ⁇ and 7 4 can optionally be replaced by normal resistors (see, for example, the aforementioned DE 195 07 303 AI); with respect to a temperature stability of the signal, it is however advantageous l ⁇ also for the elements and to choose 7 4 sensor structures as for the other sensor elements 7 2 and 7. 3
  • a soft magnetic layer 15 or a soft magnetic layer structure can be built into the structure, which reduces / shields the influence of external stray fields. This is generally advantageous since the sensor elements 7_. must be designed very sensitive for effective data transmission.
  • Such a soft-magnetic layer structure or the soft-magnetic shielding layer 15 can also be used to more effectively couple the magnetic field of the current track to the assigned sensor elements or to increase the field strength at the sensor elements.
  • the soft magnetic layer or layer structure can also be shaped in a certain way in order either to achieve better shielding of the external stray fields H st or to achieve a better coupling of the field generated by the electrical conductor 11.
  • the soft magnetic shielding layer must of course be electrically insulated from the individual turns of the electrical conductor 11. An insulation layer 14 shown in the figure is used for this.

Abstract

La présente invention concerne un arrangement permettant de transmettre des signaux. Cet arrangement présente une piste électro-conductrice (11), qui produit un champ de signaux magnétique au moyen d'un flux de courant (I), ainsi que plusieurs éléments de détection magnétorésistifs (7i) d'aimantation (mi), qui sont connectés à deux branches de pont (Z1, Z2), afin de former un pont complet ou partiel (B). La piste conductrice (11) doit être montée sur les éléments de détection (7i) de façon qu'à partir d'elle (11), un élément de détection de la première branche de pont (Z1) et un élément de détection de la seconde branche de pont (Z2) soient alternativement détectés et que le même sens de flux de courant (I) soit donné dans des éléments de détection diagonaux (71, 74 ou 72, 73).
PCT/DE2001/002476 2000-07-17 2001-07-04 Arrangement permettant de transmettre des signaux au moyen d'elements de detection magnetoresistifs WO2002006844A1 (fr)

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DE10034732.0 2000-07-17
DE2000134732 DE10034732A1 (de) 2000-07-17 2000-07-17 Anordnung zur Signalübertragung mittels magnetoresistiver Sensorelemente

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Cited By (4)

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Publication number Priority date Publication date Assignee Title
WO2009080286A1 (fr) * 2007-12-22 2009-07-02 Sensitec Gmbh Dispositif de mesure de courants exempte de potentiel
US7839605B2 (en) 2005-11-13 2010-11-23 Hitachi Global Storage Technologies Netherlands B.V. Electrical signal-processing device integrating a flux sensor with a flux generator in a magnetic circuit
CN104779343A (zh) * 2014-01-13 2015-07-15 上海矽睿科技有限公司 一种磁传感装置
CN107238749A (zh) * 2016-03-29 2017-10-10 西门子公司 差电流传感器

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102006039490A1 (de) * 2006-08-21 2008-03-27 Institut für Physikalische Hochtechnologie e.V. Magnetischer Sensor und Verfahren zu dessen Herstellung
DE102007040183A1 (de) * 2007-08-25 2009-03-05 Sensitec Naomi Gmbh Magnetfeldsensor zur Erfassung eines äußeren magnetischen Felds, insbesondere des Erdmagnetfelds, sowie mit solchen Magnetfeldsensoren gebildetes Magnetfeldsensorsystem

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EP0782002A1 (fr) * 1995-12-27 1997-07-02 Leach International Germany GmbH Hybrid Elektronik Procédé et dispositif pour mesurer un courant sans contact galvanique
WO1998007165A2 (fr) * 1996-08-16 1998-02-19 Nonvolatile Electronics, Incorporated Detecteur de courant magnetique
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DE19933209A1 (de) * 1998-07-17 2000-02-03 Alps Electric Co Ltd Magnetfeldsensor mit Riesenmagnetoresistenzeffekt-Elementen sowie Verfahren und Vorrichtung zu seiner Herstellung

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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7839605B2 (en) 2005-11-13 2010-11-23 Hitachi Global Storage Technologies Netherlands B.V. Electrical signal-processing device integrating a flux sensor with a flux generator in a magnetic circuit
WO2009080286A1 (fr) * 2007-12-22 2009-07-02 Sensitec Gmbh Dispositif de mesure de courants exempte de potentiel
US8680856B2 (en) 2007-12-22 2014-03-25 Sensitec Gmbh Arrangement for the potential-free measurement of currents
CN104779343A (zh) * 2014-01-13 2015-07-15 上海矽睿科技有限公司 一种磁传感装置
CN107238749A (zh) * 2016-03-29 2017-10-10 西门子公司 差电流传感器
CN107238749B (zh) * 2016-03-29 2021-07-23 西门子公司 差电流传感器

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