WO2001094659A2 - Procede, appareil et cible de pulverisation permettant de limiter la formation d'arcs electriques - Google Patents

Procede, appareil et cible de pulverisation permettant de limiter la formation d'arcs electriques Download PDF

Info

Publication number
WO2001094659A2
WO2001094659A2 PCT/US2001/017338 US0117338W WO0194659A2 WO 2001094659 A2 WO2001094659 A2 WO 2001094659A2 US 0117338 W US0117338 W US 0117338W WO 0194659 A2 WO0194659 A2 WO 0194659A2
Authority
WO
WIPO (PCT)
Prior art keywords
target
emitting surface
grain size
sputter
average grain
Prior art date
Application number
PCT/US2001/017338
Other languages
English (en)
Other versions
WO2001094659A3 (fr
Inventor
Philip George Pitcher
Zhihua Yan
Jaeyeon Kim
Michael Alan Rushing
Original Assignee
Honeywell International Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honeywell International Inc. filed Critical Honeywell International Inc.
Priority to AU6512601A priority Critical patent/AU6512601A/xx
Publication of WO2001094659A2 publication Critical patent/WO2001094659A2/fr
Publication of WO2001094659A3 publication Critical patent/WO2001094659A3/fr

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy

Definitions

  • the present invention relates to the preparation of thin films by magnetron sputter deposition which reduces arcing by employing targets having fine grain size and a low defect concentration.
  • Sputter deposition also known as sputter coating or sputtering is used extensively in many industries including the microelectronics, data storage and display industries to name but a few.
  • Sputter deposition is one of the most important commercial processes for depositing thin films of a desired material onto a substrate.
  • the term sputtering refers to an "atomistic" process in which neutral, or charged, particles (atoms or molecules) are ejected from the surface of a target material through bombardment with energetic particles originating from a plasma, formed in the vicinity of the target surface, and accelerated towards the target surface by a electric field produced by electrically biasing the target.
  • the target is electrically energized and biased by a power supply coupled to the target.
  • a portion of the sputtered particles condenses onto a substrate to form a thin film.
  • the biasing may be direct current (dc), radio frequency (rf) or mid-frequency (mf).
  • dc direct current
  • rf radio frequency
  • mf mid-frequency
  • magnetron sputtering One category of sputtering processes is known as magnetron sputtering. Magnetron sputtering is the most widely used form of sputtering and is the mainstay of commercial sputter deposition processes. In magnetron sputtering, crossed electric and magnetic fields generated by a magnetron assist in the sputtering by concentrating sputtering action.
  • Arcing at the sputter target is a significant problem in magnetron sputtering. Arcing events at the target can contribute to defects at the wafer (substrate). If relatively uncontrolled they can be the primary source of wafer damage and particulates. Therefore, a reduced number (frequency) and intensity of target arcing events should produce lower wafer defect densities and therefore improve process yield. Arcing can also lead to an undesirable reduction in target lifetime. The intensity and frequency of arcing may be reduced through the power supply, e.g., use of an imposed ac bias on target and arc suppression electronics and improvements in process and chamber design.
  • a sputter deposition technology in which arcing at the sputter target could be further minimized through target materials engineering, would be of significant technical and commercial value with a wide scope of technological application.
  • Such a target technology may allow the following to be improved: wafer defect density, wafer yield, target lifetime, and thereby process economics.
  • Improved sputtering is of critical importance, e.g., in emerging submicron semiconductor interconnect metalization and high density data storage media applications.
  • magnetron sputtering uses crossed electric and magnetic field configurations to concentrate the sputtering action.
  • a negative bias is applied to the target via a power supply to form a plasma, hence the magnetron and target assembly, which form the basic elements of the sputter source, is referred to as the cathode or magnetron sputter cathode.
  • magnets are positioned behind the sputter target. Magnetic field lines penetrate the target, threading through the low-pressure gas environment above the target before re-entering the target body.
  • the configuration of crossed electric and magnetic fields are designed to confine electrons emitted through the bombardment of the target by energetic gas phase ions (and/or atoms) and increase the effective path length of ionizing electrons.
  • a drift velocity is imparted on the electron motion.
  • Their net motion describing a closed loop or so called "racetrack”. The overall effect is to increase the efficiency of ionizing the process gas and therefore the density of ions in the plasma.
  • the consequent increased target bombardment enhances the efficiency of the sputtering process.
  • Both fixed and movable magnet structures have been utilized in magnetron sputtering.
  • the target is circular and the magnet structure rotates with respect to the center of the target.
  • the target is rectangular or square and the magnet structure is scanned along a linear path with respect to the target.
  • the target is rectangular and the substrate is moved in a plane parallel to the surface of the target during sputtering.
  • the second type of sputtering system is known as a linear scan sputtering system and disclosed, for example, in U.S. Pat. No.
  • Linear scanning refers to a constant velocity of the magnetron as it sweeps over the area of target whose sputter emission will produce deposition on the substrate.
  • the target assembly may include a sputter target and backing plate or be of monolithic construction, that is, the sputter target and backing plate are formed from a single piece of material.
  • This assembly may include several possible elements in addition to the sputter target and backing-plate, for example, possibly a heat exchanger assembly.
  • Improved sputtering targets would be beneficial in a variety of sputtering technologies or techniques. For example it would benefit magnetron sputtering, diode sputtering, long throw sputtering, ionized plasma vapor deposition (IPND), self-ionized plasma sputter deposition techniques, hollow cathode sputter deposition techniques, and reactive sputtering.
  • a coil is located in the vacuum chamber between the sputtering cathode and substrate, e.g., wafer, on which the film is to be deposited.
  • the coil is configured to form a secondary plasma in the region above the substrate.
  • the magnetron sputtered particles pass through a relatively high pressure ambient for creating the desired secondary plasma to undergo significant gas phase scattering, ionization (partial) in the secondary plasma followed by electrostatic deflection towards the substrate surface.
  • partial resputtering of the growing film by the electrostatically accelerated particles is used to control film characteristics. For example bottom and sidewall coverage in semiconductor interconnect applications.
  • Reactive sputtering is generally described by Nossen, et al, Thin Film Processes, Academic Press (1978), incorporated herein by reference.
  • a reactive gas or gases is added to an inert gas such that the plasma contains reactive species allowing the formation of compound thin films.
  • Reactive gases can include for example oxygen, nitrogen, methane, hydrogen sulfide, carbon monoxide, etc. as is well known in the art.
  • An object of the present invention is to provide a sputtering process having less arcing from the target and, hence, a higher recovery of sputtered wafers.
  • Another preferred object of the present invention is to provide devices for use in sputtering.
  • Another preferred object of the present invention is to provide improved articles, e.g., targets, for use in sputtering.
  • the present invention relates to a new sputter deposition technology to avoid arc-created defects in valuable wafers.
  • Target engineering is an approach to reduce arcing related film defect generation that has been relatively little exploited.
  • the present invention technology differs from other techniques by employing targets which simultaneously have fine grain size and a low number of defects.
  • the present inventors have found that fine grain size and low defect concentrations in sputter target material can significantly reduce the number of target arcing events.
  • Wafer defects can be characterized with a variety of devices by using optical interference, microscopy techniques, mechanical measurement, or electrical measurement.
  • One example is the particle inspection system based on optical interference, such as the KLA AIT 8010 Particle Inspection System.
  • the present invention provides a device for sputtering which includes any sputtering device which employs a plasma and the present advantageous target.
  • the present invention may be used to improve target materials having any elemental compositions, e.g., alloys, pure elemental materials, or chemical compounds, used for sputtering.
  • Typical target materials include copper, tantalum, aluminum, titanium, cobalt, nitrides, suicides or mixtures or alloys thereof.
  • the present invention provides methods and apparatus employing a sputtering article, e.g., target, whose emitting surface (surface for emitting sputtered particles) has a sufficiently fine average grain size and sufficiently low defect concentration to produce, by a sputtering process, a processed wafer having less than 0.06 particles per cm 2 of the wafer processed surface, wherein the particles have a diameter of at most 0.2 ⁇ m.
  • the wafer acts as a substrate.
  • the term "wafer processed surface” means the surface of the wafer upon which a thin film is deposited by sputtering.
  • Fig. 1 shows a plot of Accumulated Arc Count v. Target Life for a 30 ⁇ m average grain size 6N Cu Target.
  • Fig. 2 shows a plot of Accumulated Arc Count v. Target Life for a 9.5 ⁇ m average grain size 6N Cu Target.
  • Fig. 3 shows a plot of Accumulated Arc Count v. Target Life for a 50 ⁇ m average grain size 5N Al-0.5Cu-0.2Si Target and a 0.5 ⁇ m 5N Al-0.5Cu-0.2Si Target.
  • Fig. 4 shows a plot of Accumulated Arc Count v. Target Life for a 0.5 ⁇ m average grain size 5N Al-0.5Cu-0.2Si Target and a 0.5 ⁇ m 5N Al-0.5Cu-0.2Si Target.
  • Figs. 5A and 5B show optical and SEM views, respectively, of an Al - alloy Target Splat Defect Site.
  • Fig. 6 shows an SEM view of Cu Target Antenna Defects.
  • Figs. 7 A and 7B show multi-lobe embodiments indicating the location of the centerline of magnets.
  • targets having fine grain size and low defect content are advantageously combined in a practical manner to minimize arcing while performing the deposition technique.
  • the present inventors have discovered that arcing phenomena and arcing- related film defect generation result from complex interactions between target materials characteristics, cathode design, process parametrics and operation.
  • target grain size and defect content e.g., purity, gas content, inclusions, microcracks and voids, etc.
  • target materials with improved target microstructure and defect content.
  • Sputtering plasmas are very susceptible to arcing.
  • the Paschen curve i.e., the characteristic voltage - current density curve, describes the plasma states, or modes, which characterize the low energy, glow discharge plasmas used in sputtering. Small increases in current density level beyond the abnormal, or super glow region in sputtering will push the plasma state into the arc discharge region. It is only necessary for a single point in the plasma to exceed the threshold critical arc plasma current density for an arc to form. Any perturbation that produces the local current density to increase may result in arcing events. In the arc discharge region, the plasma impedance collapses due to the regenerative gain produced by thermal ionization from the arc discharge. Consequently, all the available energy is then driven into the arc discharge. This generates very high temperatures and further thermal ionization, which continues to lower the plasma electrical impedance. The collapse of the plasma energy to very high energy densities in a point arc discharge results in particulates and wafer damage through thermal disruption of the target surface.
  • Potential arc site defects in targets include the following.
  • Geometric features at the target surface that locally enhance electric field intensity, produced for example by cracks, the effect of grain size, shape, orientation influence on erosion topology of the microstructure.
  • Inclusions for example, oxide or graphite streamers or particles.
  • the target material has an average grain size of less than about 50 ⁇ m, more preferably less than about 20 ⁇ m, more preferably less than about 15 ⁇ m, still more preferably less than about 10 ⁇ m, more preferably less than about 5 ⁇ m, and still more preferably less than about 1 ⁇ m.
  • a typical range is from about 0J to about 0.5 ⁇ m.
  • Low defect material typically can be made by electrochemical deposition, low defect casting technology, homogeneous chemistry - solutionizing and homogenization.
  • a typical measurement of defects is the Figure of Merit (FOM).
  • the optimized method automatically generates a histogram report for all analyses, using a circular area that excludes spurious UT effects near the target edge.
  • the histogram report includes a "figure of merit" (FOM) that provides a single-number of target "goodness". This number is intended to be used for statistical process and quality controls.
  • FOM figure of merit
  • To calculate the FOM the areas of all objects in a target image that exceed a 50% threshold are determined. Next, the value for each area is squared, and then the sum of all squared values is taken. Finally, the sum of squares is multiplied by 10 8 and divided by the volume of material analyzed. For example, if the area of an object doubles, then its contribution to the FOM quadruples. As a result, the FOM places much greater emphasis on large objects, which is consistent with the expectation that anomalous sputtering events are caused primarily by the largest objects.
  • the target material has an FOM of less than about 2000, more preferably less than about 500, still more preferably less than about 200, still more preferably less than about 150, and still more preferably less than about 100.
  • FOM FOM of less than about 2000, more preferably less than about 500, still more preferably less than about 200, still more preferably less than about 150, and still more preferably less than about 100.
  • a typical preferred range is from about 1 to about 50.
  • the parameters of average grain size and FOM cannot individually be used as a indication of expected good arcing performance.
  • the parameters are to be used in combination as shown by the examples herein.
  • the invention includes operation with the broader of the above-listed average grain size ranges with the broader of the above-listed FOM ranges.
  • the invention includes employing the broader of the above-listed average grain size ranges with the narrower preferred FOM ranges or employing the broader of the above-listed FOM ranges with the narrower preferred average grain size ranges.
  • the targets may be strong crystallographically textured, highly uniform (across its area and through target thickness) polycrystalline target materials and/or single crystal sputtering targets (which may be one piece or mosaic structures comprised of several pieces of single crystal of one or a mixture of crystallographic orientations).
  • Single crystal targets, or single crystal mosaic targets may have desirable low arcing characteristics.
  • providing a finely machined surface finish free of surface contaminants and mechanically induced surface damage (or complete removal by non-mechanical techniques, for example chemical or electrochemical etching or polishing) will improve the arcing characteristics of a target.
  • the benefits of such a surface will include reducing initial arcing during sputtering, thereby reducing burn in time by reducing the component of wafer particulates induced by arcing.
  • polycrystalline commercial targets have a high quality commercial no. 16 - 32 machined finish prior to sputtering.
  • Single crystals typically have a diamond turned mirror finish or che o, or chemomechanical surface preparation.
  • Arc detection may be accomplished by a variety of techniques.
  • arc detection may be accomplished by techniques which rely on monitoring of the cathode connection current-voltage characteristics looking for transient events in the amplitudes of the cathode supply current and voltage waveforms which momentarily or otherwise interrupt the normal supply of electrical energy to the cathode produced by arcing.
  • high current- low voltage excursions over small time scales generally on the scale of micro- to milli- seconds produced by arcing events.
  • Characteristic arc waveforms are defined, recognized and counted through electronic filtering and sampling.
  • magnetron designs utilize magnet assemblies that move the racetrack plasma over the target surface with the substrate often static.
  • a popular example of the latter is , the scanning spiral type.
  • a suitable cathode may comprise a target assembly and a rectangular magnetron (magnet assembly).
  • the magnetron is connected to a drive assembly and capable of computer controlled motion.
  • the magnetron's spatial disposition, distance from and orientation, with respect to the electrically insulating back plate of the heat exchanger assembly is variable.
  • the target assembly comprises a sputter target and a backing plate.
  • the sputter target is mechanically and/or thermally coupled to the backing plate or the assembly is monolithic.
  • the sputtering face of the sputter target is exposed to the environment of a process.
  • Figs. 7A and 7B show views of a typical magnetron sputtering device that benefits from targets of the present invention.
  • the magnetron of these figures is described by United States patent no.4,995,958 to Anderson et al, incorporated herein by reference in its entirety.
  • Fig 7A shows a layout of a magnet design. This magnet may be used for a magnet array of a magnetron. Permanent magnets Ml through M14, as shown in Fig. 7B are sandwiched between iron keepers 31, 33 which retain the magnets in position and act to distribute the magnetic field uniformly along the magnet and to accurately define the contour of the magnet.
  • the keepers may be spot welded to a magnet support.
  • the magnetic means may be a unitary magnet having the contour defined by keepers 31 and 33.
  • the curve A, B shown in Fig. 7B passes through the center of each magnet and the centerline of each magnet is perpendicular to the curve A, B. It is convenient for the thickness of the keeper to be sufficiently small so that it is flexible enough to be bent to the required contour.
  • permanent magnets are placed between the keepers.
  • a typical magnet is samarium cobalt with an energy product of 18 MGO having dimensions 3/4" by 3/4" by 0.32".
  • two magnets are used to form each unit.
  • Various spacings between the magnets may be employed as known in the art.
  • the process chamber contains gas comprising a member selected from the group consisting of Ar, Kr, Ne, Xe, oxygen, nitrogen, hydrogen, methane, acetylene, hydrogen sulfide, carbon dioxide, carbon monoxide and mixtures thereof.
  • the present inventors have discovered that smaller grain size coupled with reduced defect content, e.g., trapped gases, microcracks, inclusions and voids are correlated with reduced arcing and film defects. Also, new materials processing techniques yield improved purity and microstructure control. Moreover, STaR Center Endura testing will correlate yield improvements to target microstructure and arcing.
  • reduced defect content e.g., trapped gases, microcracks, inclusions and voids
  • the targets were sputtered in argon in a DCmagnetron-sputtering machine equipped with rectangular planar magnetron cathodes as well as an arcing monitoring and counting system.
  • Ultra high purity argon gas (99.999% Ar) was introduced into the chamber during sputtering.
  • the sputtering parameters were monitored and regulated to achieve desired sputtering conditions for specific targets.
  • the copper targets was "6 nines" purity.
  • the aluminum-0.5 copper - 0.2 silicon targets were "5 nines" purity. There was no substrate. Arcing at the target was measured.
  • Arcing count was recorded by using a computerized arcing monitor system that detects arcing events by sensing instant variation in cathode voltage and current.
  • the arcing counting parameters that define an arcing event were set to be the same, so that sputter performance of different targets can be compared. With given sputtering conditions, target defects play dominant role in arcing events that can cause wafer defects upon deposition.
  • Comparative Example 1 measures accumulated arc count vs. target life for standard 6N Cu target (a target with 6 nines purity) with 30 ⁇ m grain size.
  • the target for this example was made by a standard, conventional, thermomechanical process.
  • Sputtering conditions are given as follows: Sputter power: 10 W/cm 2 Ar gas pressure: ⁇ lxl0 "3 mbar
  • Fig. 1 shows a baseline arcing for a standard target grain size.
  • Example 1 measures accumulated arc count vs. target life for a 6N Cu target (a target with 6 nines purity) with 9.5 ⁇ m grain size.
  • the target for this example was made by an ECAE process.
  • Sputtering conditions are given as follows: Sputter power: 10 W/cm 2 Ar gas pressure: ⁇ lxl0 "3 mbar
  • Fig. 2 shows very low arc count with reduced grain size.
  • Example 2 measures accumulated arc count vs. sputter time for A10.5Cu0.2Si target with low defect content and a 50 ⁇ m grain size and an FOM of 2. The target has 5 nines purity.
  • the target for this example was made by a standard, conventional, thermomechanical process. Sputtering conditions are given as follows: Sputter power: 15 W/cm 2 Ar gas pressure: ⁇ 2 mTorr
  • Example 3 measures accumulated arc count vs. sputter time for A10.5Cu0.2Si target with low defect content and a 0.5 ⁇ m grain size.
  • the target has 5 nines purity.
  • the target for this example was made by an ECAE process and had a FOM of 13.
  • Example 4 measures accumulated arc count vs. sputter time for A10.5CuO.2Si target with 0.5um grain size.
  • the target has 5 nines purity.
  • the target for this example was made by an ECAE process and had a FOM of 1726. Sputtering conditions are given as follows:
  • Example 5 measures accumulated arc count vs. sputter time for A10.5CuO.2Si target with 0.5um grain size.
  • the target has 5 nines purity.
  • the target for this example was made by an ECAE process and had a FOM of 13 (a defect concentration lower than that of Example 4).

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

La présente invention concerne un procédé, un dispositif et une cible permettant de réaliser des films pulvérisés avec un plasma, la pulvérisation faisant intervenir l'utilisation d'une cible ayant une faible taille de grain et une faible concentration de défauts, afin de limiter la formation d'arcs électriques.
PCT/US2001/017338 2000-06-02 2001-05-29 Procede, appareil et cible de pulverisation permettant de limiter la formation d'arcs electriques WO2001094659A2 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU6512601A AU6512601A (en) 2000-06-02 2001-05-29 Sputtering method, apparatus, and target for reduced arcing

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US20850600P 2000-06-02 2000-06-02
US60/208,506 2000-06-02

Publications (2)

Publication Number Publication Date
WO2001094659A2 true WO2001094659A2 (fr) 2001-12-13
WO2001094659A3 WO2001094659A3 (fr) 2002-07-04

Family

ID=22774837

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2001/017338 WO2001094659A2 (fr) 2000-06-02 2001-05-29 Procede, appareil et cible de pulverisation permettant de limiter la formation d'arcs electriques

Country Status (2)

Country Link
AU (1) AU6512601A (fr)
WO (1) WO2001094659A2 (fr)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1382710A1 (fr) * 2002-07-18 2004-01-21 Praxair S.T. Technology, Inc. Cible de pulvérisation à base de cuivre à grain ultrafin
EP2330231A1 (fr) * 2008-09-30 2011-06-08 JX Nippon Mining & Metals Corporation Cible de pulvérisation de cuivre de haute pureté ou d alliage de cuivre de haute pureté, procédé pour la fabrication de la cible de pulvérisation, et film pulvérisé de cuivre de haute pureté ou d alliage de cuivre de haute pureté
WO2016140833A1 (fr) * 2015-03-02 2016-09-09 Tosoh Smd, Inc. Cible de pulvérisation cathodique possédant une géométrie cible de cambrure inverse
US9476134B2 (en) 2008-09-30 2016-10-25 Jx Nippon Mining & Metals Corporation High purity copper and method of producing high purity copper based on electrolysis
EP2622113B1 (fr) * 2010-09-28 2018-10-31 Singulus Technologies AG Revêtement de substrats avec un alliage par pulvérisation cathodique
US10900102B2 (en) 2016-09-30 2021-01-26 Honeywell International Inc. High strength aluminum alloy backing plate and methods of making
US11244815B2 (en) 2017-04-20 2022-02-08 Honeywell International Inc. Profiled sputtering target and method of making the same
US11359273B2 (en) 2015-08-03 2022-06-14 Honeywell International Inc. Frictionless forged aluminum alloy sputtering target with improved properties

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5809393A (en) * 1994-12-23 1998-09-15 Johnson Matthey Electronics, Inc. Sputtering target with ultra-fine, oriented grains and method of making same
US5993621A (en) * 1997-07-11 1999-11-30 Johnson Matthey Electronics, Inc. Titanium sputtering target

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3975414B2 (ja) * 1997-11-28 2007-09-12 日立金属株式会社 スパッタリング用銅ターゲットおよびその製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5809393A (en) * 1994-12-23 1998-09-15 Johnson Matthey Electronics, Inc. Sputtering target with ultra-fine, oriented grains and method of making same
US5993621A (en) * 1997-07-11 1999-11-30 Johnson Matthey Electronics, Inc. Titanium sputtering target

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 1999, no. 11, 30 September 1999 (1999-09-30) & JP 11 158614 A (HITACHI METALS LTD), 15 June 1999 (1999-06-15) *

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1382710A1 (fr) * 2002-07-18 2004-01-21 Praxair S.T. Technology, Inc. Cible de pulvérisation à base de cuivre à grain ultrafin
EP2330231A1 (fr) * 2008-09-30 2011-06-08 JX Nippon Mining & Metals Corporation Cible de pulvérisation de cuivre de haute pureté ou d alliage de cuivre de haute pureté, procédé pour la fabrication de la cible de pulvérisation, et film pulvérisé de cuivre de haute pureté ou d alliage de cuivre de haute pureté
EP2330231A4 (fr) * 2008-09-30 2012-11-21 Jx Nippon Mining & Metals Corp Cible de pulvérisation de cuivre de haute pureté ou d alliage de cuivre de haute pureté, procédé pour la fabrication de la cible de pulvérisation, et film pulvérisé de cuivre de haute pureté ou d alliage de cuivre de haute pureté
US9441289B2 (en) 2008-09-30 2016-09-13 Jx Nippon Mining & Metals Corporation High-purity copper or high-purity copper alloy sputtering target, process for manufacturing the sputtering target, and high-purity copper or high-purity copper alloy sputtered film
US9476134B2 (en) 2008-09-30 2016-10-25 Jx Nippon Mining & Metals Corporation High purity copper and method of producing high purity copper based on electrolysis
EP2622113B1 (fr) * 2010-09-28 2018-10-31 Singulus Technologies AG Revêtement de substrats avec un alliage par pulvérisation cathodique
WO2016140833A1 (fr) * 2015-03-02 2016-09-09 Tosoh Smd, Inc. Cible de pulvérisation cathodique possédant une géométrie cible de cambrure inverse
US11359273B2 (en) 2015-08-03 2022-06-14 Honeywell International Inc. Frictionless forged aluminum alloy sputtering target with improved properties
US10900102B2 (en) 2016-09-30 2021-01-26 Honeywell International Inc. High strength aluminum alloy backing plate and methods of making
US11244815B2 (en) 2017-04-20 2022-02-08 Honeywell International Inc. Profiled sputtering target and method of making the same

Also Published As

Publication number Publication date
AU6512601A (en) 2001-12-17
WO2001094659A3 (fr) 2002-07-04

Similar Documents

Publication Publication Date Title
US6787010B2 (en) Non-thermionic sputter material transport device, methods of use, and materials produced thereby
US4941915A (en) Thin film forming apparatus and ion source utilizing plasma sputtering
EP0328076B1 (fr) Appareil pour former des films minces et source d'ions utilisant la pulvérisation par plasma micro-onde
JPS63230866A (ja) アノード・カソード間のアーク放電による真空蒸着の方法及び装置
JPH06145975A (ja) 炭素フィルムをスパタリングする方法及びその製造物
Comas et al. Mass‐Spectrometric Study of Sputtering of Single Crystals of GaAs by Low‐Energy A Ions
US6585870B1 (en) Physical vapor deposition targets having crystallographic orientations
EP1574596A1 (fr) Film conducteur transparent et procede de fabrication de film destine a celui-ci
Musil et al. High‐rate magnetron sputtering
WO2001094659A2 (fr) Procede, appareil et cible de pulverisation permettant de limiter la formation d'arcs electriques
Harper Ion beam deposition
Williams Vacuum coating with a hollow cathode source
McClanahan et al. Production of thin films by controlled deposition of sputtered material
Monaghan et al. Novel PVD films by unbalanced magnetron sputtering
US5567288A (en) Crystal-oriented thin film manufacturing apparatus
Wehner et al. Substituting low‐energy (< 30 eV) ion bombardment for elevated temperature in silicon epitaxy
JP3734656B2 (ja) 金属含有硬質炭素膜の形成方法
Bilek et al. Filtered cathodic vacuum arc (FCVA) deposition of thin film silicon
JP3562595B2 (ja) スパッタ装置
KR20010005515A (ko) 산화 마그네슘 스퍼터링 장치
Ai et al. A study of HCD ion plated titanium nitride films
Miyagawa et al. Growth of epitaxial TiN films on MgO (100) by high current discharge plasma
EP1381703B1 (fr) Procede permettant de determiner une dimension critique d&#39;une inclusion d&#39;oxyde d&#39;aluminium dans une cible de pulverisation cathodique en aluminium ou en alliage d&#39;aluminium
JPH01240645A (ja) 真空蒸着装置
Rigsbee Physical vapor deposition

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EE ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NO NZ PL PT RO RU SD SE SG SI SK SL TJ TM TR TT TZ UA UG US UZ VN YU ZA ZW

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): GH GM KE LS MW MZ SD SL SZ TZ UG ZW AM AZ BY KG KZ MD RU TJ TM AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE TR BF BJ CF CG CI CM GA GN GW ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
DFPE Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101)
AK Designated states

Kind code of ref document: A3

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EE ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NO NZ PL PT RO RU SD SE SG SI SK SL TJ TM TR TT TZ UA UG US UZ VN YU ZA ZW

AL Designated countries for regional patents

Kind code of ref document: A3

Designated state(s): GH GM KE LS MW MZ SD SL SZ TZ UG ZW AM AZ BY KG KZ MD RU TJ TM AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE TR BF BJ CF CG CI CM GA GN GW ML MR NE SN TD TG

122 Ep: pct application non-entry in european phase
NENP Non-entry into the national phase in:

Ref country code: JP