WO2001086774A1 - Structure de blindage electrostatique passive pour des circuits electriques et conditionnement d'energie avec des chemins d'energie exterieurs partiellement blindes - Google Patents

Structure de blindage electrostatique passive pour des circuits electriques et conditionnement d'energie avec des chemins d'energie exterieurs partiellement blindes Download PDF

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Publication number
WO2001086774A1
WO2001086774A1 PCT/US2001/003792 US0103792W WO0186774A1 WO 2001086774 A1 WO2001086774 A1 WO 2001086774A1 US 0103792 W US0103792 W US 0103792W WO 0186774 A1 WO0186774 A1 WO 0186774A1
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WO
WIPO (PCT)
Prior art keywords
energy
common
electrode
differential
split
Prior art date
Application number
PCT/US2001/003792
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English (en)
Inventor
William M. Anthony
Anthony A. Anthony
Original Assignee
X2Y Attenuators, L.L.C.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/579,606 external-priority patent/US6373673B1/en
Priority claimed from US09/594,447 external-priority patent/US6636406B1/en
Priority claimed from US09/632,048 external-priority patent/US6738249B1/en
Application filed by X2Y Attenuators, L.L.C. filed Critical X2Y Attenuators, L.L.C.
Priority to EP01908876A priority Critical patent/EP1264377A4/fr
Priority to JP2001582886A priority patent/JP2003533054A/ja
Publication of WO2001086774A1 publication Critical patent/WO2001086774A1/fr

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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K9/00—Screening of apparatus or components against electric or magnetic fields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C1/00—Details
    • H01C1/14—Terminals or tapping points or electrodes specially adapted for resistors; Arrangements of terminals or tapping points or electrodes on resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
    • H01C7/102—Varistor boundary, e.g. surface layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/35—Feed-through capacitors or anti-noise capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
    • H01L2223/64—Impedance arrangements
    • H01L2223/66—High-frequency adaptations
    • H01L2223/6605—High-frequency electrical connections
    • H01L2223/6616—Vertical connections, e.g. vias
    • H01L2223/6622—Coaxial feed-throughs in active or passive substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/14—Structural association of two or more printed circuits
    • H05K1/141—One or more single auxiliary printed circuits mounted on a main printed circuit, e.g. modules, adapters
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/16—Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor
    • H05K1/162—Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor incorporating printed capacitors
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • H05K3/341—Surface mounted components
    • H05K3/3431—Leadless components
    • H05K3/3436—Leadless components having an array of bottom contacts, e.g. pad grid array or ball grid array components

Definitions

  • This application relates to a universal multi-functional common conductive shield structure plus electrically opposing differential energy pathways which in part uses a
  • faraday shield architecture with stacked conductive hierarchy progression comprising
  • circuitry for energies propagating simultaneous along paired and electrically differential
  • the present invention also relates to discreet and non-discrete
  • architecture with stacked conductive hierarchy progression comprising circuitry that can comprise energy propagation modes and possesses a balancing, centrally positioned and commonly shared common conductive energy pathway or electrode to complementary and simultaneously shield and smooth energy decoupling operations between energized conductive pathways and electrodes.
  • the invention when energized, will almost always allow both the outer partially shielded paired differential conductive energy pathway electrodes, as well as the contained and oppositely paired differential conductive energy pathway electrodes to function with respect to one another, in balance, yet in an electrically opposite complementary manner, respectively.
  • the present invention relates to a layered, universal multi-functional common conductive shield structure plus electrically opposing complementary, energy pathways for circuitry and energy conditioning that also possesses a commonly shared and centrally positioned conductive pathway or electrode that can complementary and simultaneously shield and allow smooth energy interaction between energized conductive pathway electrodes.
  • the invention when energized, will usually allow the contained conductive pathways or electrodes to operate with respect to one another harmoniously, yet in an oppositely phased or charged manner, respectively.
  • an invention embodiment When placed into a circuit and energized, an invention embodiment will also provide EMI filtering and surge protection while maintaining an apparent even or balanced voltage supply between a source and an energy utilizing-load.
  • the invention will almost always be able to effectively provide simultaneous energy conditioning functions that include bypassing, energy and signal decoupling, energy -storage, and continued balance in Simultaneous Switching Operations (SSO) states of an integrated circuit gate.
  • SSO Simultaneous Switching Operations
  • Electromagnetic Interference (EMI) and immunization off electronics from that interference have become much stricter. Only a few years ago, the primary causes of interference were from sources and conditions such as voltage imbalances, spurious voltage transients from power surges, human beings, or other electromagnetic wave generators.
  • EMI can also be generated from the electrical circuit pathway itself, which makes shielding from EMI desirable.
  • Differential and common mode noise energy can be generated and will almost always traverse along and around cables, circuit board tracks or traces, high-speed transmission lines and bus line pathways. In many cases, these critical energy conductors act as an antenna radiating energy fields that aggravate the problem even more.
  • the layered, multi-functional, common conductive shield structure also provides simultaneous physical and electrical shielding to portions of propagating energy existing on electrically opposing differential electrode energy pathways by allowing predetermined, simultaneous energy interactions to take place between grouped and energized conductive pathways and various conductive pathways external to the embodiment elements.
  • a superior approach for high frequency decoupling is to provide a tight and closely placed low impedance, parallel energy pathways internally and adjacent to the electrically opposing differential electrode energy pathways or power/signal planes as opposed to utilizing many low impedance decoupling capacitors in parallel on a PCB in an attempt to accomplish the same goal.
  • the solution to low impedance power distribution above several hundred MHz lies in internally, parallel complementary aligned and positioned, thin dielectric power plane technologies, in accordance with the present invention. Therefore, it is also an object of an invention embodiment to be able to operate effectively across a broad frequency range as compared to a single component or a single passive conditioning network. Ideally, this invention can be universal in its application potentials and by utilizing various embodiments of predetermined grouped elements; a working invention will almost always continue to perform effectively within a system operating beyond 1 GHz of frequency.
  • EMI electromagnetic field interference
  • FIG. 1 shows a detailed plan view of a portion of a common conductive shielding electrode pathway and a differential electrode pathway stacking and positioning within a portion of universal faraday shield architecture embodiment 9900 with stacked conductive hierarchy progression, which is shown in FIG. 2 in accordance with the present invention
  • FIG. 2 shows portion of an exploded perspective view of an embodiment of universal faraday shield architecture 9900 with electrode stacked conductive hierarchy progression in accordance with the present invention
  • FIG. 3 shows portion of a cross-section view of paired differential bypass circuit conditioning embodiment 9905 utilizing one embodiment portion of a universal faraday shield architecture with electrode stacked conductive hierarchy progression for energy conditioning of multiple and separate bypass circuits in accordance with the present invention
  • FIG. 4 shows portion of a top plan view of layering positioning for two sets of differential, twisted pair, crossover feedthru electrode energy pathways in accordance with the present invention
  • FIG. 5 shows portion of a plan view of a paired set of 'straight feedthru' feedthru electrode layering comprising electrode energy pathways configured with a split- differential electrode configuration in accordance with the present invention
  • FIG. 6 - FIG. 6 A shows a detailed plan view of a portion of a common conductive shielding electrode pathway portion depicting a typical spilt electrode configuration in accordance with the present invention
  • FIG. 6B shows a detailed plan view cross-section depicting a typical spilt electrode configuration in accordance with the present invention
  • FIG. 7 A shows portion of a further alternate embodiment 9210 in a cross-sectional view that comprises two pairs of electrically opposing differential, twisted pair, crossover feedthru electrode energy pathways configured in accordance with the present invention
  • FIG. 7B shows portion of a top view of 9910 in accordance with the present invention.
  • FIG. 8 shows portion of an alternate embodiment 9915 in a cross-sectional view that comprises pairs of electrically opposing differential electrode energy pathways configured in accordance with the present invention
  • FIG. 9 shows circuit combination of split electrodes utilized by all of the electrodes present in an embodiment. Alternates of this can have one of two of the groups of electrodes configured un-split as an option in accordance with the present invention; Detailed Description of the Preferred Embodiment
  • the term universal multi-functional common conductive shield structure plus two electrically opposing differential energy pathways refers to both discrete and non-discrete versions of a common conductive shield structure utilizing additional electrically opposing differential energy pathways for conductive feed-thru and by-pass, energy pathways.
  • AOC the acronym term "AOC" for the words
  • predetermined area or space of physical convergence or junction which is defined as
  • Non-energization and energization are defined as the range or degree to which energy within the "AOC" of either discrete or non-discrete versions of universal multi-functional common conductive shield structure plus electrically opposing differential energy pathways are propagating energy to and/or from an area located outside the pre-determined in a complementary0 manner.
  • AOC energy within the "AOC” of either discrete or non-discrete versions of universal multi-functional common conductive shield structure plus electrically opposing differential energy pathways are propagating energy to and/or from an area located outside the pre-determined in a complementary0 manner.
  • a symmetrical design should produce a pleasing effect; if there is too close a correspondence, the effect may be monotonous.
  • a mathematical operation, or transformation, that results in the same figure as the original figure (or its mirror image) is -called a symmetry operation. Such operations include reflection, rotation, double reflection, and translation. The set of all operations on a given figure that leave the figure unchanged constitutes the symmetry group for that figure.' Therefore, a limit on the combined accuracy of certain pairs of simultaneous, related measurement generally speaking, a balance or correspondence between various parts of an object; the term symmetry is used in the sciences and the stability or efficiency resulting from the equalization or exact adjustment of opposing forces should be taken into account.
  • Measurements or declarations stating cancellation or suppression mean in the ordinary sense of the understanding all with manufacturing in mind in terms of the structures shape and size and with the understanding that the events as foretold have happened even if a device cannot measure or confirm it as cold fact.
  • the invention begins as a combination of electrically conductive, electrically semi-conductive, and non-conductive dielectric independent materials, layered or stacked in various embodiments such as discrete and non-discrete structures. These layers can be combined to form a unique circuit when placed and energized in a system.
  • the invention embodiments include layers of electrically conductive, electrically semi-conductive, and non-conductive planes that form groups of common conductive pathway electrodes, conductors, deposits, plates (all referred to as 'pathways', herein), and dielectric planes. These layers are oriented in a generally parallel relationship with respect to one another and to a predetermined pairing or groups of elements that also include various combinations of pathways and their layering into a predetermined manufactured structure.
  • invention elements are not just limited to dielectric layers, multiple electrode conductive pathways, sheets, laminates, deposits, multiple common conductive pathways or shields, sheets, laminates, or deposits.
  • the invention also includes methods to combine and connect said dielectric layers, multiple electrode conductive pathways, sheets, laminates, deposits, multiple common conductive pathways, or shields, sheets, laminates, or deposits, together for energization into a larger electrical system in a predetermined manner.
  • the structured layer arrangement When or after the structured layer arrangement is manufactured, it can be shaped, buried within, enveloped, or inserted into various electrical systems or other sub-systems to perform line conditioning, decoupling, and/or aid in modifying an electrical transmission of energy.
  • the invention can be a separate, stand-alone embodiment or manufactured as a group, integral to a larger electrical structure, such as an integrated circuit.
  • the invention can also exist as a non-energized, stand alone, discrete device that is energized with a combination, as a sub-circuit for larger circuitry found in other embodiments such as, but not limited to, printed circuit boards (PCB), interposers, substrates, connectors, integrated circuits, optical circuits, or atomic structures.
  • An alternative invention embodiment can also be built primarily as another device such as a PCB), interposers, substrates, connectors, integrated circuits, optical circuits, or atomic structures.
  • An alternative invention embodiment can also be built primarily as another device such as a
  • PCB interposer, or substrate that has a purpose mainly other than that of a smaller discrete version of an invention embodiment.
  • This type of alternative embodiment can serve as a possible system or subsystem platform that contains both active and passive components along with circuitry, layered to provide most of the benefits described for conditioning propagated energy from a source to a load and back to a return.
  • Prior art PCBs are already utilizing predetermined layered configurations with VIAs to service or tap the various power, signal, and ground layers that lie between a dielectric and insulating material.
  • At least one pair of electrically opposing complementary aligned and stacked conductive energy pathway electrodes are almost all surrounded with symmetrically aligned and stacked shielding electrodes combined in a electrode cage-like structures comprising at least one centralized and shared, common conductive pathway or area.
  • the internal/external common energy pathway electrodes and/or area becomes a shared reference ground plane for the circuit voltage existing between the two oppositely phased or -electrically opposing- differential conductive energy pathway electrodes, which are electrically and physically located on opposite sides of the common energy pathway electrodes as well as the centralized and shared, common conductive electrode pathway or external common conductive area.
  • a PCB built or utilizing an embodiment variation of the invention architecture can utilize the various grounding schemes to increase the efficiency of existing structures now used by large PCB manufacturers.
  • a passive architecture such as utilized by an invention embodiment, can be built to condition or minimize both types of energy fields that can be found in an electrical system. While an invention embodiment is not necessarily built to condition one type of field more than another, it is contemplated that different types of materials can used to build an embodiment that could do such specific conditioning upon one energy field over another.
  • the applicant contemplates a manufacturer to have the option of combining a variety and wide range of possible materials that are selected and combined into the make-up of an invention embodiment when manufactured, while still maintaining some or almost all of the desired degree of electrical functions of an invention embodiment.
  • Materials for composition of an invention embodiment can comprise one or more layers of material elements compatible with available processing technology and is not limited to any possible dielectric material. These materials may be a semiconductor material such as silicon, germanium, gallium-arsenide, or a semi-insulating or insulating material and the like such as, but not limited to any K, high K and low K dielectrics.
  • an invention embodiment is not limited to any possible conductive material such as magnetic, nickel-based materials, MOV-type material, ferrite material, films such as Mylar, or almost any kind of substances and processes that can create conductive pathways for a conductive material, and almost any kind of substances or processes that can create conductive areas such as, but not limited to, doped polysilicons, sintered polycrystallines, metals, or polysilicon silicates, polysilicon suicide, conductive material deposits.
  • Prior art capacitors manufactured in the same production batch can easily posses a variability in capacitance from component to component, ranging anywhere from >.05% - 25%.
  • their manufacturing tolerances are carried to the circuit and in this case, a differential paired circuit for example, exacerbate a voltage imbalance in the circuit.
  • a cost or a substantial premium must be paid by the user in order for the manufacturer to recover the costs for testing, hand sorting manufactured lots, as well as the additional costs for more specialized dielectrics and manufacturing techniques that are
  • the invention allows the use of very inexpensive dielectric materials (relative to the others available) to obtain balance between two lines.
  • Use of an invention embodiment will allow placement into a differentially operated circuit or almost any electrically opposing and differentially paired line circuitries to provide complementary and essentially, equal capacitive tolerances, attributed to a invention unit, that will be shared evenly and complementary by portions of propagating energies found between each paired line of the circuit utilizing an invention embodiment in an electrical manner.
  • Invention voltage tolerances and/or capacitive and inductive balance/and or minimizations between a commonly shared central conductive pathway found internally witliin an invention embodiment will almost always be relatively maintained at levels that originated at the factory during manufacturing of an invention embodiment, even with the use of X7R dielectric, which is commonly specified with as much as 20% allowable capacitive variation amongst discrete units.
  • an invention that is manufactured at a value larger than 0 to at least a 5% tolerance when manufactured as described in the disclosure will almost always also have a correlated a value larger than 0 to at least a 5% tolerance, capacitive tolerance between paired lines in an energized system and an added benefit exchange of two prior art devices for bypassing paired lines with one said invention embodiment.
  • expensive, specialized, dielectric materials are no longer needed for bypass and/or decoupling operations in an attempt to maintain a capacitive balance between two system conductive pathways, as well as allowing an invention user the opportunity to utilize a capacitive element that is homogeneous in material make up within the entire circuit.
  • the new invention is placed between conductive pathways, while the common conductive pathways that also make up an invention embodiment are connected to a third conductive pathway that is common to all elements of the common conductive pathways and is the external conductive area.
  • an invention embodiment will almost always simultaneous provide energy conditioning functions that include at least bypassing, energy, power line decoupling, energy storage and filtering.
  • the universal multi-functional common conductive shield structure acts to prevent almost any externally generated capacitive or energy parasitics such as "floating capacitance" from coupling onto the very same enveloped differential conductive pathways due to the physical shielding, separate of the electrostatic shield effect created by the energization of the common conductive shield structure and its attachment by commonly known industry attachment means know to the art to an externally located common conductive area.
  • Attachment to a common external conductive area includes areas such as commonly described as a "floating', un-potential conductive area (at a given moment), a circuit system return, chassis or PCB ground, or even an earth ground.
  • an invention embodiment allows a low impedance pathway to develop upon and within the Gauss-Faraday cage-like or common conductive shield structure unit with respect to its enveloping conductive common shields pathway electrodes that can subsequently facilitate or allow for the continue d movement of portions of energies out onto an externally located common conductive area, thus completing a creation or facilitation of development of an energy pathway of low impedance for utilization of unwanted EMI noise, as well.
  • This attachment scheme will almost always allow a "0" voltage reference to develop on opposite sides of the shared central and common conductive pathway, with respect to each differential conductor located, each of its (differential conductor) structures and the externally used common conductive surface.
  • Use of an invention embodiment allows voltage to be maintained and complementary even with SSO (Simultaneous Switching Operations) states among gates located within an integrated circuit and without contributing disruptive energy parasitics back into the circuit system as an invention embodiment is passively operated, within said circuit system.
  • SSO Simultaneous Switching Operations
  • propagated electromagnetic interference can be the product of both electric and magnetic fields, respectively.
  • emphasis in the art has been placed upon on filtering EMI from circuit or energy conductors carrying high frequency noise with DC energy or current.
  • an invention embodiment is capable of conditioning energy that uses DC, AC, and AC/DC hybrid-type propagation of energy along conductive pathways found in an electrical system or test equipment. This includes use of an invention embodiment to condition energy in systems that contain many different types of energy propagation formats, in systems that contain many kinds of circuitry propagation characteristics, within the same electrical system platform.
  • FIGS. 2,3,8, and FIG. 9 are contemplated to have either split electrode configurations or combinations with other non-split electrode configurations. Due to the interest of time, the various combinations have been omitted in this disclosure for specific drawings.
  • Principals of a Faraday cage-like structure are used when the common conductive pathways are joined to one another and the grouping of said pathways co-act together with the larger, external conductive area or surface to suppress radiated electromagnetic emissions and provide a greater conductive surface area in which to dissipate over voltages and surges and initiate common conductive electrode cage-like electrostatic dynamic suppression of parasitics and other transients, simultaneously, when a plurality of common conductive pathways are electrically coupled to system or chassis ground and are relied upon for reference ground for a circuit in which an invention embodiment is placed into and energized. Electrically opposing differential conductive energy electrodes or structures are separated electrically and also shielded from one another and normally do not touch within an invention embodiment.
  • FIG. 1, FIG. 2, and FIG. 3 Portions of a universal faraday shield architecture with stacked conductive hierarchy progression with paired; electrically opposing differential conductive pathways are shown in detail in FIG. 1, FIG. 2, and FIG. 3. Accordingly, discussion will move freely between FIG. 1, FIG. 2, and FIG. 3 in order to disclose the importance a portion a paired differential conductive pathway independent and interchangeably configured
  • Faraday-cage-like common conductive shield structure like an embodiment 9905 shown in FIG. 3 which can allow for multiple yet independently operating energy conditioning when placed in conductive combination with various internal and external common conductive pathways (not fully shown) in FIG. 1, FIG. 2, and FIG. 3.
  • 840F, 830F, 820F, 810F, 800/800-IM, 810B, 820B, 830B, 840B and 850B/850B-TM comprise an embodiment of a universal faraday shield architecture with stacked conductive hierarchy progression shown without the paired, electrically opposing differential conductive pathways in embodiment 9900
  • Final and optional sandwiching 850F/850F-TM and 850B/850B-TM common conductive shielding pathways which are used as image shields depicted in embodiment 9900 and as a portion of a variation, shown in 9905 of FIG. 3 using species of common electrode pathways which can also be found to comprise a portion of a universal faraday shield architecture with stacked conductive hierarchy progression with conductive differential pathways, if desired.
  • common conductive pathway 800/800-IM also apply to the other common conductive pathways in terms of connecting to the same electrically potential external common pathway not of the external differential pathways (both not shown in FIG. l and FIG. 2).
  • FIG. 1 shows a portion of the complete shielding electrode container 800E of FIG. 2.
  • differential conductive by-pass electrode pathway 855BB is sandwiched between the shared, central common conductive pathway
  • 800/800-IM and common conductive shielding electrode pathway 81 OB (81 OB is not shown in FIG. 1, but 81 OB is shown in FIG. 2).
  • Depositing, manufacturing and/or act of positioning dielectric material or dielectric medium 801 is for the most part, a general enveloping and interposition of the predetermined dielectric material or medium 801 during the manufacturing process by standard means known in the art.
  • Dielectric material 801 forms an area or space of separation 814 between embodiment edge 817 and common electrode pathway edge 805 as well as a generally equal distance spacing with respect the differential conductive pathways electrode edges 803 and embodiment edge 817.
  • Common conductive pathways 800/800-IM and 810B, as well as electrode pathway 855BB, are almost all separated from each other for the most part by a general parallel interposition and distance 814C with a predetermined dielectric material or medium 801 positioned against them.
  • the 814C distance exists on at least two sides of the boundary or surface or surface edge 803 of 855BB and 805 of 800-/800-IM- 1 & 2, each respective planar electrodes (2) principal surface areas as well as each perimeter edges as described contact for the most part with material 801, except where the various conductive connections are made to the • various electrode connection materials 798-GNDA and 890A respectively by way of the elongated portions 812A and 79-GNDA, respectively for each conductive electrode layered position.
  • the inset distance or area of element 806 is the boundary for the containment area of the energy flux portions during energization and this spacing is almost always relative to both perimeter common shielding electrode edge 805 and to sandwiching common conductive shielding electrode pathways and to electrically opposing differential electrode edge 803 of almost any of the sandwiched differential conductive electrode pathways (not all shown).
  • This positioning and setback distance 806 of almost any differential conductive electrode pathway elecfrode edge 803 within common electrode edges' 805 of almost any of the invention embodiments' common shielding elecfrode pathway 799G conductive material area is considered an axiom of an invention embodiment.
  • This axiom goes for almost any paired, differential conductive pathways comprising and utilizing a shielding electrode hierarchy structure whether in a container or external of the shielding 800"x" container such as shown in FIG. 3 and includes at least one pair of outer electrically opposing differential electrodes found beyond the shielding electrode hierarchy structure yet are both outer electrically opposing differential electrodes shown in FIG. 3 will almost always be utilizing to some degree the shielding electrode hierarchy structure in a shielding manner in either a discrete or non- discrete version of an embodiment (which may not be shown, herein).
  • each single common conductive container 800E and 800F is sharing a centrally positioned shielding electrode pathway that is common to both conductive shielding electrode structures and containers, which in turn make up in this case a common conductive Faraday center structure designated 900A.
  • common conductive Faraday center structure 900A portions of common conductive shielding electrode structures designated respectively as 900 "X" or like 900B and 900C of the much larger common conductive shielding electrode structure 9900 are now created.
  • Common conductive shielding electrode structures 900A, 900B and 900C as shown in FIG. 2 would each, alone, operate sufficiently as one common conductive Faraday cage-like structure with electrically opposing differential electrodes, if built as such, individually and if they include at least one pair of outer electrically opposing differential electrodes separated by the same common conductive Faraday cage-like structure and found beyond the inside of the shielding electrode hierarchy structure, they will almost always still be both utilizing to some degree the shielding electrode hierarchy structure in a shielding manner in either a discrete or non-discrete version of an embodiment (which may not be shown, herein).
  • an invention embodiment utilizes placement of the respectively paired, electrically opposing differential energy pathways (not shown) and energized, and if, a structure like either 900A, 900B and 900C are also connected together and to a external common energy pathway and not of the electrically opposing and external differential energy pathways, energy conditioning functions will almost always occur when attached into energized circuitry.
  • the relative inset or overlapping shielding distance and area 806 relative to the insetting of elecfrode 855BB within 800/800-IM- of FIG. 1 enables an electrostatic shielding effect, among others, to function from this positioning relationship and among various element relationships within an invention embodiment.
  • Some of these space/distance relationships comprise among others, vertical positioning of electrodes of almost all species (differential and common) relative to one another and by the separation dielectric material 801 amounts used in terms of spacing these electrodes from one another and within, the respective relative horizontal positioning to internal electrode positions.
  • This also includes the various spacing and distances relationships with respect to external embodiment borders or energy conditioning functions and their effect within these borders that are needed for the proper energy conditioning interactions that take place within these positioning and borders.
  • the common conductive pathway 800/800-IM should extend in a perimeter or edge overlapping distance beyond the perimeter or edge of be electrode pathway 855BB to provide shielding against portions of various types of energy flux fields (not shown) which might have normally attempted to escape or extend beyond the electrode edge 803 of the electrode pathway 855BB to couple upon a "victim" conductive pathway (not fully shown) but were it not for common electrodes 800/800-IM-, 81 OF.
  • the electrostatic shielding effect created by an energized, grouping of these common electrode pathways comprise a grouping of faraday-like cage systems which result in a reduction or a minimization of near field coupling between almost any internally positioned differential electrode pathways such as 875BB (not shown) which would generally be positioned nearby.
  • the horizontal elecfrode inset distance 806 can be stated to range between approximately greater than >0 to 20+ times the vertical distance or electrode inset distance or 814C as the approximate measured inset spacing of a differential to a common elecfrode shielding inset 806 which creates a certain distance relationship between the electrode pathway 855BB and the common conductive pathway 800/800-IM. This is based on standard manufacturing methods and distance.
  • the principal surface elecfrode conductive area size, less the elongated portions, (if used), or conductive plane size of almost any neighboring differential electrode pathway will almost always be less in the corresponding principal surface electrode conductive area size, less the elongated portions, (if used), or conductive plane size than any of one of the common conductive shielding elecfrode pathway that is adjacent and parallel to it, regardless of almost any other elements separating these two adjacent invention elements other than another differential electrode
  • FIG. 3 These special outer sandwiching differential electrode pathways can be larger or smaller in conductive area size, conductive material coverage or conductive plane size than its adjacent common conductive shielding electrode pathway(s) and further, these outer sandwiching differential electrode pathways 865BB and 865BT of FIG. 3C do not need to be identical in size with respect to one another due to other invention electrical function variation configurations.
  • any paired set of differential elecfrode pathways are same in the general corresponding conductive principal electrode surface area sizes, principal electrode conductive material coverage's or conductive plane sizes as any of the next adjacent common conductive shielding electrode principal elecfrode surfaces or pathway(s), variations of this axiom are considered an invention embodiment possessing portions of the energy conditioning functions as disclosed.
  • the electrode inset distance 806 can be optimized for a particular application, but
  • differential electrode to common shielding electrode pathway pairings and overlap relationships are ideally, approximately the same throughout an invention embodiment, as manufacturing tolerances will allow.
  • the internal differential conductive electrode pathways like 855BB which are sandwiched within the conductive areas of two common conductive pathways such as 800/800-JJVI and 81 OB (not shown) of FIG. 3, maintain an 806 distance relationship between the electrode edge 803 of differential conductive electrode 855BB which will be relative to the perimeter electrode edge 805 of common pathway electrode
  • electrode edge 805 enjoys a perimeter which is exposed or
  • FIG. 7A of the disclosure which shows a relative dielectric thickness that allows a distance or area inset to be a rule related to a relative horizontal distance for 806 which is a result of adding to the three-dimensional distance 806 from the common conductive shielding elecfrode edge 805 when measured with respect to the differential electrode pathway electrode edge 803 of 800E such that the outer elecfrode edge 803 of differential conductive pathway electrode 855BB is inset and interposition between and overlapped by a common elecfrode edge perimeter 805 of sandwiching common conductive pathways 800/800-IM and 810B (not shown) and covering a distance or an area 806, along almost the total perimeter distances of 805 and 803 located on and attributed to both 800/800-FM , 810B while relative to a sandwiched differential conductive energy electrode pathway 855BB or equivalent.
  • common conductive shielding electrode pathways such as 850F/850F-IM, 840F, 830F, 820F, 810F, 800/800-IM, 810B, 820B, 830B, 840B and 850B/850B-LM shown in FIG. 1, FIG. 2 and for the series depicted in FIG. 3 for example, will generally almost all possess nearly the same sized area of common conductive shielding electrode pathway material 799G, respectively, for the type of finished embodiment desired by the user and as normal manufacturing limitations allow in order to insure a homogenous area size relationship for almost any combination of various neighboring common conductive pathways.
  • any one, sandwiched internally positioned differential conductive pathway, both singularly and with its' same sized, paired mate, will almost always be completely shielded, physically by at least any two larger, but same sized-common conductive shielding electrode pathways relative and respectively to one another and both of which will be almost always comprised of a larger total shielding conductive electrode area than that of the differential electrode they shield.
  • This same sized-common conductive shielding elecfrode axiom holds to the size relationship of the at least same sized or larger conductive material area of a common electrode energy pathway element relative to the conductive area size of any sandwiched differential conductive pathway or electrodes(s) within almost any of the inventions' Faraday-cage-like common conductive shield structure containers such as those designated 800A, 800B, 800C, 800D, 800E, 800F, 800G, and 800H as depicted in FIG. 2 and partially in FIG. 3 (each referred to generally as 800'X').
  • any one of the sandwiching common conductive pathways' will posses a total top and bottom conductive material area sum almost always greater than the total conductive area material sum, top and bottom, of almost any one-sandwiched differential conductive pathway, alone.
  • Any one of the sandwiched, differential conductive pathways will almost always be almost completely physically shielded by common conductive shielding elecfrode material area so to partially makeup typical universal faraday shield architecture with stacked conductive hierarchy progression comprising paired, electrically opposing differential conductive pathways. All of the conductive common conductive pathways shown in FIG. 1 and FIG. 2, including common conductive shielding pathway electrodes 850F/850F-TM, 840F, 830F,
  • 820F, 810F, 800/800-IM, 810B, 820B, 830B, 840B and 850B/850B-TM are normally inset a pre-determined three dimensional distance 814 from the outer edge 817 of embodiment 9905 (not shown) but this can be seen in detail with 800E of FIG 1.
  • element 813 is a dynamic representation shown of the center axis point of the three-dimensional energy conditioning functions that take place within an invention embodiment (not shown) are relative with respect to the final size, shape and position of the embodiment in energized circuitry.
  • paired and same sized electrically opposing, differential conductive pathways, along with the larger sandwiching common conductive pathways, like 800/800-IM and 81 OB of FIG. 2 will be almost always generally of the same size, respectively, per homogeneous species groupings (Common or differential pathways) to one another within the same species grouping, as relative manufacturing capabilities will allow.
  • This same-sized conductive pathway electrode species axiom is good for almost all conductive pathway species groups, which comprise some of the main elements within the general make-up of almost any new invention embodiment.
  • differential conductive electrode pathway 855BB can comprise a deposited, doped, chemically created or placed, or simply screened on conductive elecfrode material area 799 of any differential conductive pathway will almost always be less in total conductive area size than any of one common conductive shielding electrode material area 799G size, and almost always relative to of any given sandwiching common conductive pathways' such as 800/800-IM and 810Bs', conductive electrode pathway material 799 area when calculating a ratio of total conductive elecfrode material areas.
  • 799 and 799G are normally identical conductive material types disclosure purposes and although in other embodiments they could be of different material types, they are of the same type, herein but labeled differently in order to explain the embodiments as thoroughly as possible.).
  • 800/800-IM, 810B, 820B, 830B, 840B and 850B/850B-IM shown in FIG. 2 that make up shielding electrode containers 800A, 800B, 800C, 800D, 800E, 800F, 800G, and 800H up to that envelope the differential pairs to make up essential groupings of paired conductive shield-like containers 800X will again aid to a good degree in performing the portions of energy propagation relative to the externally attached, common conductive area or common energy pathway and will simultaneously allow for creation of voltage image reference aids for circuits contained within the invention embodiment.
  • shielding elecfrode container structures 800'X' that make up part of an invention embodiment are in balance within the embodiment structure according to a followed predetermined stacking sequence and that almost any additional or extra single common conductive shield pathway layers that are added by mistake or with forethought during the manufacturing process will not sufficiently hamper or degrade energy conditioning operations.
  • An added extra common conductive elecfrode layering can actually reveal a potential cost savings in the manufacturing process wherein ahnost any automated layer processes could possibly added the additional outer layer or layers as described or actually not include one of the two designated — TM common conductive shield electrodes.
  • common conductive shielding electrode pathways 850F/850F-IM, 840F, 830F, 820F, 81 OF, 800/800-IM, 81 OB, 820B, 830B, 840B and 850B/850B-TM are also surrounded by dielectric material 801 that provides for support and the outer casing of the invention embodiment when configured as a discrete component.
  • the common conductive connection material or structures designated 798-GND'X' are applied to a elongated, contiguous portion of said common shield pathway elecfrode extension 79-GNDA at electrode edges 805 of common pathway electrode material 799G of contained within structure 9900 on at least two sides as shown for this configuration and as is depicted n FIG. 2 and as is depicted in detail for common electrode energy pathway 800/800-IM in FIG. 1. It should be noted that the number of common shield pathway electrode extensions 79-GNDA at any of the common
  • Various dielectric materials 801 also enable predetermined electrical conditioning functions to operate upon portions of propagating energies transporting along the various combinations of electrically opposing and paired differential conductive energy pathways that are within or utilizing the embodiment AOC.
  • element type 798-GND'X' common conductive attachment means, electrode or termination structure will allow electrical and physical connection of common conductive pathway energy electrodes, 850F/800F-TM, 840F, 830F, 820F, 81 OF, 800/800-M, 810B, 820B, 830B, 840B and 850B/850-TM, respectively, to each other and to the same electrically conductive external common
  • This new common energy pathway created is not of the differential pathways (not shown) and is utilized for the development or the creation of a third, common conductive energy pathway, external (not shown) to an invention embodiment and of 798-GND'X' common conductive attachment , such as an electrically conductive
  • 900C as depicted and which in turn are comprised of multiple, stacked, common conductive cage-like structures or containers 800A, 800B, 800C, and 800D (each referred
  • Each common electrode shielding, cage-like structure 800X comprises at least two common conductive pathway electrodes, 850F/800F-IM, 840F, 830F, 820F, 810F, 800/800-IM, 810B, 820B, 830B, 840B and 850B/850-1M.
  • the number of stacked, common conductive cage-like structures 800X is not limited to the number shown herein, and can be almost any even integer in number.
  • the number of stacked, common conductive cage-like structures 900X is also not limited to the number shown herein and could be of an even or odd integer.
  • each paired common conductive cagelike structure 800X sandwiches at least one conductive pathway electrode as previously described in relation to FIG. 1.
  • the common conductive cage-like structures 800X are shown separately to emphasize the fact they are paired together and that almost any type of paired conductive pathways can be inserted within the respective common conductive cage like structures 800X.
  • the common conductive cage-like structures 800X have a universal application when paired together to create larger common conductive cage-like structures 900X, which are delineated as 900B, 900A and 900C, respectively and can be used in combination with paired conductive pathways in discrete, or non- discrete configurations such as, but not limited to, embedded within silicone or as part of a PCB, discreet component networks, and the like.
  • the dielectric material 801 conductively separates the individual common conductive pathway electrodes 850F/800F-IM, 840F, 830F, 820F, 81 OF, 800/800-IM, 81 OB, 820B, 830B, 840B and 850B/850-TM, from the paired and same sized, electrically opposing, differential conductive pathways or conductive pathway electrodes (not shown) sandwiched therein and also conductively separates as well as shields the outer at least one pair of same sized, electrically opposing, differential conductive pathways.
  • the very basic common conductive pathway manufacturing result of any sequence should appear as an shielding electrode embodiment structure that comprises a minimum of three common conductive interconnected common shielding electrode pathways stacked and further comprising, at least two sets of pairings of electrically opposing, differential electrode energy pathways, one set paired and internal within the minimum of three common conductive interconnected common shielding electrode pathways and one set paired and external to the minimum of three common conductive interconnected common shielding electrode pathways that can be connected an energized such that it will contain at least on portion of an operating, electrical circuit when energized.
  • the combination helps perform simultaneously, energized line conditioning and filtering functions upon the energy propagating along the various paired groupings of electrically opposing differential conductive electrodes pathways (not shown), sandwiched within the cage-like structure 900'X' as well as conductively separating at least one pair of outer positioned, generally the same sized (there are exceptions to these special outer electrodes), electrically opposing, differential conductive pathways.
  • Conductive common connection of the internally placed shielding electrodes with one another and to an external energy pathway not of the differential conductive pathways allows this third pathway to be used simultaneously as a separate energy pathway that can provide a reference voltage to the portions of circuitry contained within an invention embodiment.
  • the third energy pathway utilized by the grouped elecfrode shielding pathways also simultaneously allows for development of a predetermined low impedance pathway utilized by the respective portions of the energies utilizing the differential pathways for propagation.
  • Differential propagation of energies through an invention embodiment allows for development of a device or embodiment that provides portions of the energies within an invention embodiment AOC to utilize portions of an invention embodiment in a complementary and balanced manner with respect to one another and to the benefit of the circuit system efficiency over that of similar prior art circuitry.
  • This separate and commonly shared third pathway acts as not only a voltage divider for energies found in predetermined energized circuitry due to its actual physical and electrical placement locations in a normally larger energized circuitry.
  • This physical and electrical location can best be described as a shielding electrode interpositioning and electrically common placement between at least a set of internal, paired and oppositely co-acting, differential conductive energy pathways and at least one pair of outer positioned, generally the same sized (there are exceptions to these special outer electrodes), electrically opposing, differential conductive pathways during energized operations.
  • the separate third pathway also becomes simultaneously utilized and shared as a common voltage reference node with respect to not only a circuit operating within an invention embodiment and/or its 813 AOC (not shown) but at least a set of paired and oppositely co-acting, differential conductive energy pathways and at least one pair of outer positioned, generally the same sized (there are exceptions to these special outer electrodes), electrically opposing, differential conductive pathways of the same circuit during energized operations, as well.
  • the invention will also minimize or suppress unwanted energy parasitics originating from either of the paired and oppositely co-acting, differential conductive energy pathways connected to circuifry, respectively, from upsetting one another, portions of the propagating circuit energy or voltage balance within the AOC of an invention embodiment.
  • the invention will also minimize harmful and unwanted energy parasitics a subsequent conduction pathway of release for escaping in the form of common mode energies and the like back into the circuit system to detrimentally affect circuifry outside the AOC influence.
  • a break down of the overall structure 9905 into even smaller, paired, cage-like conductive structure portions can be done and reveals for example, various smaller grouping of overlapping conductive shield structures down to just 900A which is further comprised of common conductive shielding electrode energy pathways 81 OF-, 800/800-IM-, 81 OB- individually of the shield species group will be almost always conductively combined and attached together with external common conductive material 6805 or industry standard connections means (not shown) to allow an externally located common conductive area or pathway 6803 to be utilized and which is not of the various external electrically opposing differential conductive energy pathways that can be found attached to or conductively connected to an invention embodiment for a typical application for the new invention.
  • 800"X' ' ' will comprise common conductive universal shielding electrode structure 9905 or equivalent in such a manner that various common conductive pathway shielding electrodes could be added in a pre-determined fashion to form the paired 900"X" structures, which in turn form a larger overall shielding electrode structure similar to that shown in FIG. 2.
  • common conductive connection material connections 798-GNDA can maintain some type of physical and electrical contact with a portion of common pathways electrode edge 805 by the reach of the generally designated elecfrode extension portion designated as 79-GND'X', respectively, as shown in FIG.3, a fully configured invention embodiment should work properly.
  • each and every paired electrically opposing differential conductive bypass propagation mode energy pathways like inner 855BB and inner 855BT of FIG. 3 are considered sandwiching the common interconnected conductive pathways each, respectively, such as various combinations of common conductive elecfrode shielding electrode pathways 810F, 800/800-IM, 810B, which are sandwiching the 855BB and 855BT differential conductive pathways internally and which are themselves also setback in a generally equal 806 positioning (FIG.l).
  • each and every paired electrically opposing differential conductive bypass propagation mode energy pathways like outer 865BB and outer 865BT are also stacked yet separated, electrically.
  • each container 800D and 800E can hold an equal number of same sized, differential electrodes such as inner 855BB and inner 855BT that are physically opposing one another to some degree within larger structure 900A, yet they are oriented and will operate in a generally physically and electrically parallel manner, respectively, that allows the various energy conditioning functions to be maintained.
  • conductive solder material 6805 or other normal connection means for conductive attachments or known industry methods like resistive fits, or various soldering methods known methods (not shown) and by utilizing internal elecfrode extensions 79-GNDA and almost any possible means of commonly acceptable industry attachment methods (not shown) such as reflux solder , conductive epoxies and adhesives and the like (but not shown).
  • any manufacturing sequence as follows: (excluding dielectric material, etc.) a differential conductive pathway 865BB, then a common conductive pathway 810B, internally positioned differential conductive pathway 855BB and then central and commonly shared common conductive pathway elecfrode 800/800-IM, followed by internal differential conductive pathway 855BT, then common conductive pathway 81 OF and then outer electrically opposing differential conductive pathway 865BT a voltage reference pathway will result when a completed structure for this example is energized in FIG. 3.
  • portions comprising 81 OF, 800/800-IM, 81 OB are now shown comprising part of embodiment 9905 of FIG. 3.
  • Certain common shield electrodes are configured as shielding electrodes comprising two 798-GNDA electrode extensions
  • FIG. 3 depicts various elements of an attached cut-away version of invention embodiment 9905 and is shown in a cut-away view.
  • structure 9905 comprises stacked, common conductive cage-like structure 900A depicted and which in turn is comprised of multiple, stacked, common conductive cage-like structures or containers 800D and 800E (each referred to generally as 800X), in a generally parallel, but interconnected, conductive shielding electrode relationship.
  • Each common conductive container 800D and 800E comprises at least two common conductive pathway electrodes, 81 OF, 800/800-IM, 81 OB.
  • the number of stacked, common conductive cage-like structures 900X is also not limited to the number shown herein and is normally of an even or an odd integer.
  • each paired common conductive cage-like structure is also shown, in FIG. 3, is that each paired common conductive cage-like structure
  • the stacked, common conductive interconnected shielding electrode cage-like structures 800X almost all can be used in combination with separate, but paired external differential conductive energy pathways in discrete, or non-discrete configurations such as, but not limited to, a discrete stand-alone component as shown in FIG. 3 and FIG. 7A, or others not shown; such as but not limited to a component combination, discrete and non-discrete embedding within silicone IC's, interposers, modules, subsfrates or as part of a PCB, energy conditioning networks, and the like.
  • the common conductive pathway electrodes 81 OF, 800/800-IM, and 81 OB are all conductively interconnected as shown at 79-GNDA(s) which provide conductive connection point(s) to external common conductive energy pathway or area 6803 through solder material 6805 or most any other attachment means known within the state of the art.
  • Each common conductive pathway electrode 810F, 800/800-IM, and 810B, is formed on dielectric material 801 and reveal side bands only comprised of dielectric material 801 in place of conductive electrode material 799G.
  • the paired set electrically opposing differential energy pathways depicted are sets or pairs, co-sized and near completely lapping one another's principal electrode surface areas , although separated by a larger common shielding elecfrode and 801 dielectric material. They are complementary paired for conductive attachment for electrically opposing operations (when energized). These co-sized, complementary paired electrically differential (in operation) conductive elecfrode or energy pathways are always physically separated from one another as well as, electrically located on the opposite sides respectively, the electrical charge of one of two principal conductive portions of a common conductive shielding electrode energy pathway with respect to each other. Since all of the electrodes found are generally planar in shape and appearance, aligned respectively per their homogeneous groups, symmetry develops at many levels within the part that is efficiently utilized by the various portions of energies propagating within.
  • the structure also facilitates an energized connection combination as just described that will allow enhancement of the external common conductive energy pathway or area 6803 to aid the interconnected common shielding electrodes within embodiment 9905 to assist in providing efficient, simultaneous conditioning upon portions of energies propagating on or along said portions of assembly 9905s" differential elecfrode conductors 855BB,
  • 865BB and 855BT and 865BT energy pathways as portions of these conductive pathways within 9905 are externally connected by conductive connection extensions 812A and 812B structures which attach to conductive connection means 890B and 89 IB for the circuit grouping comprising paired differential electrodes 855BB, 855BT, 865BB and 865BT.
  • the internal and external parallel arrangement groupings of a combined interconnected common shielding electrodes 810F, 800/800-IM, and 810B will also help to cancel or suppress unwanted parasitics and electromagnetic emissions that can escape from or enter upon portions of for the circuit grouping comprising paired differential electrodes inner 855BB and inner 855BTand portions of the circuit grouping comprising paired differential electrodes outer 865BT and outer 865BT through the AOC which are respectively used by portions of energies as they propagate along these disclosed conductive pathways to active assembly load(s) (not shown).
  • the universal shielding electrode structure will also facilitate availability to portions of propagating circuit energies (not shown) the same type of physical shielding electrode structure 9905 of FIG. 3 that allows for development of a common low impedance energy pathway (not shown) and reference image (not shown) which are not of the differential pathways for portions of the sub-circuit energy pathways to work harmoniously.
  • portions of propagating circuit energies will be almost always provided with a energy blocking function of high impedance in one instant for some other opposing and shielded separated portions of energies propagating contained within portions of the AOC with respect to the very same third energy pathway and reference image, while in the very same instant this high impedance-low impedance switching phenomena is occurring in yet a diametrically opposing manner, at the same instant, and occurring for energies propagating relative to the portions of energies located oppositely to one another in a complementary manner, but along opposite sides of the same shared larger universal shielding elecfrode structure in an electrically harmonious manner.
  • These generally planar layers shown in FIG. 3 comprise for example, a ceramic dielectric material 801, with a 799G conductive elecfrode material applied or deposited during manufacturing.
  • the principal electrode surfaces of the common shielding electrode layers are situated generally parallel to the principal dielectric material 801 surfaces (both not shown in FIG. 3) of the embodiment layering 9905. As shown in FIG.
  • 865BT enhances mutual cancellation of their respectively opposing magnetic fields while co-acting simultaneously with one another in utilization of the electrostatic or Faraday shielding effects that are also occurring to portions of energies propagating along the various circuitry portions of the same, oppositely positioned pair of energy pathways within an invention embodiment AOC.
  • the resulting invention embodiment structure will yield beneficial energy conditioning to portions of circuit energies located along the differential conductive pathways within the AOC as just described.
  • the paired and opposing differential conductive pathways as just described also maintain an energized relationship that is electrically complementary in some ways yet also simultaneously electrically opposite to one another, regardless of the generalized direction of portions of the propagating energies residing along each of the respectively paired differential energy pathways 855BB and 865BB, along with 855BT and 865BT.
  • Such a configuration as shown in FIG. 3 comprising for example 855BB and 865BB, along with 855BT and 865BT, respectively will yield one of the two respective differential energy pathways each, 855BT and 865BT electrically located as energy pathways that are in this case, electrically located between a energy source and a energy- utilizing load separated by -the 800-IM central common conductive shield element and others, while the remaining respective differential energy pathways , 855BB and 865BB will also be considered electrically located as energy pathways positioned between an energy-utilizing load that is connecting back to it's energy source originator that initiated portions in some form or another of the portions of energies propagating along with a defined circuitry that could be considered from the source of the energy propagations that began at the initial time of circuit energization.
  • one of two respective, adjacent but shielded and separated differential energy pathways or differential electrodes 855B and 865BB for example exist in an energized state in a mutually co-active relationship to one another but between the shielded architecture both physically and electrically yet the actual physical separations maintained are in a range anywhere from between less than 50 mms to a smaller number that is still larger than 0 mms or greater, as long each handles propagation of portions of circuit energies with respect to the other.
  • Conductive connection of the joined common conductive and enveloping, multiple common shield pathways , respectively with a common centrally located common conductive pathway 800'X'-IM will almost always become like the extension of external conductive element 6803, as shown in FIG.
  • shielding electrode assembly 900A will almost always enhance and produce efficient, simultaneous conditioning upon the energy propagating on or along said portions of shielding electrode assembly 900A's outer differential conductors 865BB and 865BT.
  • the internal and external parallel arrangement groupings of a combined common conductive 900A will almost always also cancel or suppress unwanted parasitics and electromagnetic emissions that can escape from or enter upon portions of said differential conductors differential conductors 855BT and 855BB used by said portions of energy as it propagates along a conductive pathways (not shown) to active assembly load(s) not shown in FIG. 3.
  • Users of the various invention embodiments may use all most any type of the industry standard means of attachment methodologies and/or conductive materials or structures to conductively connect all common conductive energy pathways to one another and/or to the same externally located conductive energy pathway that is normally separate of the differential paired pathways.
  • hysteresis effect is significantly reduced closer to zero within an invention embodiment due to the complementary stress forces placed upon the materials arriving in a manner that is almost 180 degrees - opposing or out of phase simultaneously on the other side of the interposed common elecfrode energy pathways-.
  • These stress handling techniques as disclosed are very difficult to duplicate with prior art componentry, if at all. This is particularly true for prior art componentry configured in feedthru propagation modes and applications.
  • 79S"X" used for designation of the conductive electrode extension portions allows flow of portions of propagating energy along the internally positioned differential conductive electrodes that are arriving from external conductive connection structures (not fully shown) that are attached by standard industry means and methodologies.
  • a new invention embodiment like 9210 shown in FIG. 7A and FIG. 7B can be comprised of a SPLIT elecfrode 7300C and 7300D sfraight feedthru version which are positioned or spaced closely relative to one another in such a manner that each set of SPLIT-differential electrode planes of conductive electrode materials 799 normally appear to be comprise - singular- in a completed 9210, with the same or slightly less in volumetric size then that of a prior art structure.
  • differential electrodes 7300C and 7300D together are defined as at least two single same-sized, energy pathways separated by at least a larger third common conductive shielding electrode or internal energy pathway that is placed in an interposed positioned to be shared by both 7300C and 7300D for energy conditioning still utilize the same voltage reference for circuit reference functions in embodiment 9210 as an un-split pairing would use. They still comprise one set of electrically opposed and paired, same-sized conductive electrode principal areas 797"x" for each set of placed elecfrode material 799 and planar areas for part of many variations of energy conditioning embodiments utilizing a common voltage reference for the circuit reference functions. This is universal in the invention with split electrode configurations.
  • These two co-sized sized conductive material or elecfrode energy pathway areas 7300C and 7300D are still smaller than the common shielding elecfrodes 810F-1&2, 800/800- IM- 1 & 2, 810B-1&2 that all together comprise a grouping of four distinct, yet closely spaced pairs of two units each of thin conductive electrode elements 797SF1-A, 797SF1- B and 797SF2-A, 797SF2-B, respectively separated in substantially parallel relation in and among themselves by a thin layer of the dielectric casing material 801.
  • each common, shielding elecfrode energy pathways does not have to comprise of a corresponding closely spaced pair of thin common, shielding electrode energy pathway elements because it is not necessary -for these common shielding electrode structure elements for these shielding elecfrodes to possess double the total elecfrode surface area because of using this configuration in all cases, the common shielding electrode structure elements that comprise the larger universal common conductive shielding electrode structure architecture with stacked hierarchy progression does not handle energy the main input or output energy propagation pathway functions like those of the prior art. Rather, the common shielding elecfrode structure elements are utilized within an invention embodiment 9210 and the like, in most cases, as a third, additional energy transmission pathway not of the external differential energy pathways (not shown).
  • the energy- conditioning component 9210 comprises two external common conductive connecting electrodes 798-GNDA AND 798-GNDB for common conductive connections of all internally located GNDG shield electrodes to an external, common conductive energy pathway (not shown) not of any of the differential external energy pathways or circuifry (not shown).
  • FIG. 7A discloses a single circuit, high-low voltage handling ability provided within the same energy-conditioning embodiment to allow both a low voltage energy conditioning function utilized for a predetermined energized circuit but to simultaneously function for a circuit utilizing a high-voltage energy pathway and conditioning function within the very same multilayer invention if desired, is now disclosed.
  • FIG. 7A discloses a single circuit, high-low voltage handling ability provided within the same energy-conditioning embodiment to allow both a low voltage energy conditioning function utilized for a predetermined energized circuit but to simultaneously function for a circuit utilizing a high-voltage energy pathway and conditioning function within the very same multilayer invention if desired, is now disclosed.
  • 7A's other embodiments overall are suitable for simultaneous electrical circuit systems comprising both low and high-voltage circuit applications that will almost always provide excellent reliability by utilizing a balanced shielding elecfrode architecture incorporating paired, and smaller-sized (relative to the common shielding pathway elecfrodes) elecfrodes, but also same-sized and paired differential sfraight feed-thru configured and paired differential feedthru configured conductive and electrically opposing electrodes as shown in FIG. 5, for example.
  • 797F4B and 797F3A, 797F3B, as well as, 797F1A, 797F1B and 797F2A, 797F2B, is desirably minimized, to be typically less than 1.0 mil, but greater than 0, dependent upon currently existing manufacturing tolerances and electrode material energy-handling properties will almost always allow for the desired effect, whereas the dielectric distance 814C that can be found between the interpositioned differential and common energy pathway electrodes 797F1B and 81 OB- 1 & 2, and 797F2A and 810B-1 & 2 for example, is substantially greater than that of the 814-B separation.
  • each paired and SPLIT conductive electrode pathway is essentially very similar in conductive area size, but preferably the same with respect to its SPLIT mate, and thus the twin plates designated 797F4A, 797F4B and 797F1 A, 797F1B , respectively are each merely reversed conductive electrode material mirror images of 797F3A, 797F3B and 797F2A, 797F2B.
  • dielectric material 801 is made, then placement and positioning of a layering of elecfrode material 799G to allow formation of differential conductive pathway 797F2B, then, a very thin layer 814B spaced, dielectric material 801 is made, followed by a layering of 799 electrode material for the formation of differential conductive pathway 797F2A, then an 814C application of dielectric material 801 is placed, then followed by the placement positioning of a layering of elecfrode material 799G for formation of common conductive shielding elecfrode pathway 810B- 1 & 2, then a 814C layering of dielectric material 801, followed by a layering of electrode material 799 for formation of differential conductive pathway 797F1B, a very thin layer 814B spaced in distance of dielectric material 801 is utilized , then a another
  • new invention is also suitable for simultaneous electrical systems comprising both low and high- voltage circuit applications that will almost always provide excellent reliability by utilizing a balanced shielding electrode architecture incorporating paired, and smaller-sized (relative to the common shielding pathway electrodes) differential pathway electrodes.
  • an invention embodiment can also be combined with, and suitable for electrical systems comprising various low and high current circuit applications.
  • various heterogeneous combinations of either both or mixed same-sized and paired differential bypass and paired differential feed-thru energy pathways that are configured for electrically opposing, paired operations can be stacked vertically or horizontally or in a combination of both vertically and horizontally mixed and matched differential circuifry pathways using a variety of energy propagation modes as described.
  • dielectric material 801 's spacings or the spacing equivalent (not fully shown) separation distances designated as 806A, 806, 814, 814A, 814B, 814C and 814D (not fully shown) are almost always device-relevant.
  • 806A, 806, 814, 814A, 814B, 814C and 814D are almost always device-relevant.
  • the various separation distances 814"X" call out an application-relative, predetermined, 3-demensional distance or area of spacing or separation filled with 801 material as measured between common shielding elecfrode energy path-containers, 800D and 800E, respectively, and the various differential elecfrodes, split, other otherwise.
  • Separation distance 814A is a generally very small parallel adjacent area of three dimensional separation distance or proximity of spacing found between multiple adjacent common elecfrode material pathways such as common electrode pathway - and common electrode pathway image shield 800/800-IM- for example containing a thin dielectric material 801 or spacing equivalent (not fully shown) or other type of spacer (not shown).
  • Separation distance 814C is the vertical separation found between common electrode pathways such as common electrode pathway and differential elecfrode pathways such as differential elecfrode pathways.
  • Separation distance 814B is the vertical separation between SPLIT differential conductive pathways such as SPLIT differential conductive pathways 797F1-A and 797F1-B and 797F2-A and 797F2-B.
  • each of these pairs of elecfrodes or elecfrode layers are shown having at least two portions of differential elecfrode pathway material and dielectric material 801 (not shown).
  • FIG. 4 shows a top view of two side-by-side, top-on-top stackings 7200A and 7200B of the different feedthru differential electrode pathways 799F1A, 799F2A and 799F1B, 799F2B.
  • the configuration generally designated as 7200A and 7200B are generally referred to as crossover feedthru differential electrode pathways 799F1A, 799F2A and
  • 7300B are generally comprising what is referred to as electrically opposing straight feedthru differential elecfrode pathways and are represented by 799SF1A, 799SF2A (not shown but below 799SF1A) and 799SF2B, 799SF1B (not shown but below 799SF2B) herein, in that the electrically opposing sfraight feedthru differential electrode pathways have entry/exit points for portions of energies respectively which are located in line with each other and are added by 79SF1A, 79SF2A and 79SF2B, 79SF1B conductive elecfrode extension pairs of just described.
  • each differential electrode pathway 799SF1A, 799SF2A and 799SF1B, 799SF2B enters the larger area of differential elecfrode pathways 799SF1A, 799SF2A and 799SF1B, 799SF2B such that the portions of energy propagating in opposite directions through the differential elecfrode pathways 799SF1A, 799SF2A and 799SF1B, 799SF2B provides various simultaneous energy conditioning effects upon the portions of propagating energy within the AOC.
  • passive components containing a layered architecture have been produced by formulating the dielectric material into relatively thin sheets.
  • the dielectric sheets While in a relatively flexible or “green” state before firing, the dielectric sheets are electrode or silk- screened with a refractory or conductive metal or metal deposits to define thin conductive electrodes of selected area.
  • a plurality of these dielectric based sheets with conductive electrodes thereon are laminated into a stack and then fired to form the sheets into a rigid and dense, substantially monolithic casing structure having the differential and common conductive elecfrodes embedded therein at a predetermined dielectric spacing with the predetermined layering sequence of differential, common conductive elecfrodes accomplished.
  • the inherent resistance provided by the thin elecfrode plates results in at least some power loss in the form of heat, although it can be considered minimal in a by-pass configuration such as with the current invention with the common conductive plates shorting to a external conductive area or other type of attachment.
  • the elecfrode plate power loss, and thus the magnitude of plate heating in feed-thru-like operation is a function of electrical energy. If the plate energy is sufficiently high for even a relatively short period, sufficient plate heating can occur to cause electrode/plate failure, particularly by localized disruption of the thin elecfrode plates and/or the connections thereof to the conductive termination components.
  • the dielectric components are formed by casting a thin layer of a slurry of finely divided dielectric forming material such as barium titanate suspended in a liquid matrix including binder.
  • the "green" ceramic is screen printed with elecfrode forming ink in the desired shaped patterns.
  • the ink will include a metal, such as palladium.
  • Patterned green ceramics are superposed to provide the desired number of layers, the patterns of adjacent layers being coordinated to achieve the desired overlapped condition.
  • Individual units are diced from the superposed layers in such manner as to expose base portions at opposite ends of the pre-fired chips. The diced units are thereafter subjected to binder burn-off at a first temperature and thereafter sintered at a higher temperature to define the monolith. Terminations are applied to the respective exposed base portions at one end and another at the other end.
  • Terminations may be formed in any of a number of known manners including vapor deposition to provide electrical and mechanical bond to the exposed electrode bases at opposite ends of the monolith followed by application of one or more metallic layers over the sputtered layer to enable soldering to the motherboard.
  • the terminations may extend beyond the end margins where surface mounting is desired.
  • Alternative termination methods include applications of carbon followed by an outer silver layer with or without intervening metallic layers between carbon and silver. Layers of material elements are also compatible with available and future processing technology.
  • the present invention overcomes the problems and disadvantages encountered in the prior art by providing an improved circuit conditioning function with an embedded elecfrode layer/plate pattern that is capable of handling significantly higher RF propagational portions in certain pre-determined applications, without requiring a significant increase in the volumetric size.
  • common conductive elecfrode layers share multiple points or conductive pathways of common connection to one another and to the same externally conductive area or external common conductive path as energy is conducting or affecting said common elements in a parallel manner.
  • the energized invention as a whole, made up of the layered elements posses a multitude of complementary dynamic energy paths of varying intensity or degrees and these complementary dynamic energy paths can be considered three-dimensional and multi-directional in terms of a simultaneous energy fransmission direction.
  • Energy movement through the invention as a whole is different with respect to the energy transmission path or movement path for a single, layered element of the invention, yet both types of movement or influences are occurring complementary, dynamic as well as simultaneously through both non-parallel and parallel energy fransmission paths. Since these energy transfer movements, parallel and non-parallel, are occurring simultaneously within the invention, they have an effect on the circuit functions and effectiveness. These movements are always dynamic and influencing some or all of the layered elements, simultaneously.
  • the current load carried by each energy conditioner electrode layer or layering is a function of the number of layers used in a capacitive energy conditioner. That is, using twice the number elecfrode layers halves the current carried by each layer in a given circuit application. Thus, by doubling the number of electrode layers, the power, -which must be dissipated -by each layer in the form of heat, is reduced by a factor of four.
  • a capacitive energy conditioner with twice the number of electrode layers has a significantly greater current handling capacity without heat-caused damage.
  • doubling the number of capacitive energy conditioner layers has essentially required a corresponding increase in capacitive energy conditioner size, wherein the requisite size increase is not compatible with certain operating environments.
  • the present invention resides in the recognition that the number of elecfrode layers in a capacitive energy conditioner can be effectively doubled to provide significantly improved current handling capacity, but in high voltage applications where the required dielectric spacing is relatively thick, there is only a small increase in the physical size of a capacitive energy conditioner using the split-layer technology for the common conductive elecfrodes only.
  • 1 is taken as a common closely paired, symmetrical electrode assembly or split-pairing of equal-sized elements 800/800- ⁇ vl-1 and 800/800-IM-2 electrode halves and separated by a very thin layer 814B of a dielectric material 801, in this instance, 800/800-IM into the dual layer elements 800/800- ⁇ vl-l and 800/800-TM-2 as described above.
  • the distance between slit-electrodes is normally greater than zero to a range of 25 % of the separation distance either planned for or normally found between any two non-split electrodes or the normally found as electrode spacing between any two split-pairings of a differential and a common elecfrode grouping that are separated from one another by a material like 801.
  • each active layer element 800/800-IM- 1& 2 as a whole is disposed in the desired and normal dielectric spaced relation with a corresponding differential electrode (not shown).
  • the only increase in total energy conditioner size for a given number of common electrode layers like 800/800-IM-l & 2 or 800"X"-1 & 2 involves the minimal thickness spacing 814B of the specific dielectric material like an 801 or even another that is used in conjunction between each pair of dual layer elements 800/800-IM-l & 2.
  • U.S. Patent Number 5,978,204 discloses 'a layered capacitor architecture that comprises a plurality of active and ground electrode plates interleaved and embedded within a dielectric casing of ceramic and the like with each active and ground plate being defined by a closely spaced pair of conductive plate elements which significantly increase the total area of each electrode plate, and thereby correspondingly increase the current handling capacity of the prior art capacitor.
  • FIG. 5 shows electrically opposing differential electrode pairings, 7300C and
  • Each full differential electrode 7300C and 7300D comprises SPLIT electrodes
  • each SPLIT differential electrodes of parent 797SF2 and 797SF1 are positioned in such close proximity within an invention embodiment that the pair of SPLIT differential electrodes 797SF1-A and 797SF1-B and 797SF2-A and 797SF2-B, respectively, work as one single capacitor plate 7300C and 7300D each, respectively when they are electrically defined.
  • 79-SFl AND 79-SF2 of FIG. 5 are simply elongated portions of the electrode shape constructed and used for designation of the conductive electrode extension portions allowing the flow of portions of propagating energies along the internally positioned differential conductive electrodes that are arriving from external conductive connection structures (not shown) that are attached by standard industry means and methodologies.
  • an invention embodiment (not shown) allows the use of these SPLIT differential elecfrode pairs, 797SF1-A and 797SF1-B and 797SF2-A and 797SF2-B which are placed in a position of separation 814B by only microns with respect to one another and as such, will almost always allow portions of propagating energies traveling along these differential conductive pathways to utilize the closely positioned SPLIT pairings 797SF1-A and
  • each grouping of SPLIT electrodes as described is as one single differential conductive elecfrode each and yet this can be done without having to configure additional common conductive shielding electrodes as well.
  • the advantage of using paired SPLIT elecfrodes is that the additional area gained by using the additional elecfrode will almost always significantly increase the current handling ability of the two electrically opposing, differential conductive pathway 797SF1-A and 797SF1-B and 797SF2-A and 797SF2-B electrode elements with respective to the current carrying ability of one un-spilt paired group of differential, electrically opposing energy pathways 7300E and 7300E (not shown) without this feature.
  • 814B, 814C and 814D are almost always device-relevant. By looking at the cross section provided in FIG. 7A, an observer will note the other significant vertical distance and vertical separation relationships (not fully shown) that are of a predetermined electrode and conductive pathway stacking arrangement (not fully shown) that is depicted.
  • FIG. 2 could also contain a single or grouping of SPLIT differential electrodes, such as 800F comprising common shields 810B-1&2 and 820B-1&2 and containing differential conductive pathway 797SF2 like it shown in FIG. 7A, including areas abutting or bordering along conductive elecfrode material surfaces or
  • Separation distance 814A is a generally very little parallel adjacent area of three dimensional separation distance or proximity of spacing found between multiple adjacent common electrode material pathways such as common elecfrode pathway 820B- and common electrode pathway image shield 850B/850B-LM- for example containing a thin dielectric material 801 or spacing equivalent (not fully shown) or other type of spacer (not shown).
  • Separation distance 814C is the vertical separation found between common electrode pathways such as common electrode pathway 820B- and differential electrode pathways such as differential elecfrode pathways 865BT.
  • Separation distance 814B is the vertical separation between SPLIT differential conductive pathways such as SPLIT differential conductive pathways 797SF1-A and 797SF1-B.
  • hysteresis effect is significantly reduced closer to zero within an invention embodiment due to the complementary stress forces placed upon the materials arriving in a manner that is almost 180 degrees manner simultaneously on the other side of the interposed common electrode energy pathways, energy.
  • These stress handling techniques as disclosed are very difficult to duplicate with prior art componenfry, if at all. This is particularly true for prior art componentry configured in feedthru propagation modes and applications.
  • 79S"X" used for designation of the conductive electrode extension portions allows flow of portions of propagating energy along the internally positioned differential conductive electrodes that are arriving from external conductive connection structures (not fully shown) that are attached by standard industry means and methodologies.
  • a new invention embodiment like 9210 shown in FIG. 7A and FIG. 7B can be comprised of ⁇ a- SPLIT elecfrode 7300C and 7300D sfraight feedthru version which are positioned or spaced closely relative to one another in such a manner that each set of SPLIT-differential elecfrode planes of conductive electrode materials 799 normally appear to be comprise a completed 9210 with the same or slightly less in volumetric size then that of a prior art structure, yet with more efficient and larger energy handling capacity than that found in an identically sized prior art device containing more distinct numbers of same sized SPLIT differential feed thru conductive differential elecfrodes.
  • the new invention would allow for more energy carrying or energy propagation ability utilizing less layerings, occupying less area, allowing for more circuitry conductive connections while simultaneously handling energy-conditioning demands of a plurality of energy pathways this small, but significant configuration within the new invention configurations like 9210 of FIG. 7 A or the like.
  • 7300C and 7300D that together are defined as at least two single same-sized, energy pathways separated by at least a larger third common conductive shielding electrode energy pathway that is placed in an interposed positioned to be shared by both
  • Split, differential elecfrodes 7300C and 7300D that comprise one set of electrically opposed and paired, similarly sized conductive material areas for part of many variations of energy conditioning embodiments utilizing a common voltage reference for the circuit reference functions.
  • These two similarly sized conductive material or elecfrode energy pathway areas 7300C and 7300D are still smaller than the common shielding electrodes 81 OF- 1 & 2, 800/800-IM- 1 & 2, 81 OB- 1 & 2 that all together comprise a grouping of four distinct, yet closely spaced pairs of two units each of thin conductive electrode elements 797SF1-A, 797SF1-B and 797SF2-A, 797SF2-B, respectively separated in substantially parallel relation in and among themselves by a thin layer of the dielectric casing material 801. (Refer to drawing 7A and replace designation 797SF1-A,
  • each common, shielding electrode energy pathways also comprise a corresponding closely spaced pair of thin common, shielding elecfrode energy pathway elements because it is also beneficial in some configurations these common shielding elecfrode structure elements for these shielding electrodes to possess double the total elecfrode surface area because of using this configuration, the common shielding elecfrode structure elements that comprise the larger universal common conductive shielding electrode structure architecture with stacked hierarchy progression will also handle energy the main input or output energy propagation pathway functions in some attachment configurations.
  • the common shielding elecfrode structure elements are utilized within an invention embodiment 9210 and the like, in most cases, as a third, additional energy transmission pathway not of the external differential energy pathways (not shown).
  • the relative symmetry element balancing pairing goes for the larger sandwiching common conductive pathways as well as the differential conductive pathways and relate to continued improvements to a new family of discrete, multi-functional energy conditioners that are different from the complementary same size-axiom presented earlier and will now relate to another variation concept of the new family of discrete, multifunctional energy conditioners.
  • the invention constitutes forming of various internal electrode patterns 799 and 799G, so that the principal electrode areas (excluding the elecfrode elongations 79-GNDA or 812A for example) are in a relative positioning to one another for a plurality of the inner electrodes as groups and individuals as well as pairs that are positioned decrease gradually (or stepwise) from the central part to the surface of the dielectrics 1 along the laminated directions of ceramic sheets.
  • the internal electrode patterns (excluding the electrode elongations 79-GNDA or 812A for example) are formed, so that the areas taken up by the conductive principal surface areas (not shown from above) of a plurality of the internal electrodes are decreasing gradually (or stepwise) in both directions out, symmetrically between positions apart from the central common shielding elecfrode which is serving as the balancing point of the symmetry.
  • the pairings in this case are between the dividing 800-1&2/800-IM-1 & 2 central common shielding electrode. Part to the surfaces of the dielectric 801 along the laminated directions of dielectric material 801 sheets (not shown).
  • 875BT, 885BB and 885BT (all of which could be split-electrodes) that are in place and working out respectively, from the center common share elecfrode pathway 800/800-JJVJ, one could observe a difference (other material elements of -9915 are omitted in this portion of the disclosure for concept clarity reasons ) with a first pairing of same sized electrically opposing, differential conductive pathways 855BB and 855BT and at the placement of the first and second common conductive shielding energy pathways 810F-1
  • the device or embodiment is proportionally and symmetrically balanced with proportionally reduced or enlarged same-sized third and fourth differential conductive pathways 865BB and 865BT, one sees that they are still at least even but preferably setback 40, 41, 42, 43, within the subsequent sandwiching fourth and fifth common conductive shielding energy pathways 820B-1&2 and 820F-1&2, and so on, one is offered an additional invention variation 9915 that still follows the general principals of a universal multi-functional common conductive shield structure plus two electrically opposing differential energy pathways (885BT and 885BB in 9915), which in part uses a faraday shield architecture with stacked conductive hierarchy progression. This concept could also be used for a universal multi-functional common conductive shield structure (not shown) comprising circuifry for energies (not shown) propagating simultaneous along paired and electrically differential pathways 855BB,
  • 885BB and 885BT that are physically parallel to one another as well as located relative to one another respectively, on opposite sides of the central common conductive shielding energy pathway 800/800-IM- 1&2, and can be placed or positioned with a setback scheme 40, 41, 42, 43, for example so that 855BB, 855BT, 865BB, 865BT, 875BB, 875BT, 885BB and 885BT are not necessarily matched to the respective neighboring differential electrode that was placed before it, like 885BT and 875BT for example.
  • the relative pair axiom concept disclosed is that these matching and physically parallel, same-sized pair of differential conductive pathways 855BB, 855BT, 865BB, 865BT, 875BB, 875BT, 885BB and 885BT are primarily matched in size, relative and respectively to one another (855BB to 855BT, 865BB to 865BT, 875BB to 875BT, and 885BB to 885BT, but not necessarily matched as adjacent neighbors in size (855BB to 865BB to 875BB to 885BB, for example) as in other embodiments like 9905 of FIG.
  • a relative pairing concept and a setback scheme could also extend even further to include the common pathway elecfrodes -830F-1&2, 820F-1&2, 810F-1&2, 800/800-IM-1&2, 810B-1&2, 820B-1&2 and 830B-1&2 of the shield elecfrode structure elements as with setback scheme 44, 45, 46 and 47, so as long as each invention embodiment variation could comprise certain portions of the various other materials and methodology placement concept elements like a 801 material, the 814-"X" relative setback areas (814A, 814B, 814C, 814D, etc.
  • connection element like798- GND'X' for discrete versions, (while not always used for non-discrete versions, for example), that are deposited on either side of the key, and axiomatic center common share electrode pathway 800/800-IM when they are manufactured, (800/800-IM is always a functioning starting point relative to any subsequent layerings or deposits, but not necessarily a manufacturing starting point).
  • an invention embodiment variation will operate in a predetermined electrical conditioning manner with respect to various energy conditioning fimctions required by the user.
  • This relative balancing, relative “twin pairing " or relative “mirror-like” element match-off or relative pair balancing is a novel improvement over the of the previous embodiments such as 9905 and a structural improvement that will produce many unexpected results and will be viable as long as electrostatic shielding function (not shown) of universal faraday shield architecture with stacked conductive hierarchy progression comprising the paired, electrically opposing differential conductive pathways is not compromised.
  • circuit and electrodes simply schematically illustrate a two pathway circuit formed by predetermined conductive material attachment (not shown) located external to the pre-determined arrangements various split-electrodes that make up part of the invention embodiment, shown.
  • predetermined conductive material attachment not shown
  • These conductive circuit attachments can be made regardless of the embodiment encasement in the sense of a discrete or non-discrete embodiment of pre-determined conductors not of the actual layers themselves to the external structure pathways utilizing the connecting split-electrode portion of the invention.
  • the following is a listing of the various portions involved with the circuit:
  • 327 Line to common split-elecfrodes - energy conditioner that are formed during energization. 328 Represents the same attachment point and/or structure of (1) conductive split-elecfrode 303
  • the circuit and functions shown FIG. 9 in a two-line circuit without the option of a third pathway connection.
  • the invention circuit and device functions shown FIG. 9 operate like a shielding switching regulator with capacitive and inductive cancellation functions in a predetermined aligned stacking of smaller and larger groups of two separate functioning groups of split electrodes 329,330,331 and 313 and 314. These two groups of split-elecfrodes, common yet and in this case now differential only by orientation sense of the word.
  • yielding one large ideal energy conditioning circuit between Vdd and Vss with return through the invention's circuit common split-electrodes shields pulling double duty as the primary circuit portion element used both as a portions of energy return, and voltage image with shielding central common elecfrode 330.
  • invention circuit and device should be located as close to the load 317 as possible, this will minimize the stray inductance and resistance associated (not shown) with the internal elecfrode portion 314, 313 of circuit fraces 301, 322, thereby taking full advantage of the invention circuit and device properties and capabilities for utilization by the portions taking the energy paths in it their propagations to undergo conditioning.
  • portions of energies in the circuit will operate in a bypass propagation mode with respect to over all handling by respective physically differential bypass split-elecfrodes 313 and 314 and will operate in a feed-thru relationship thorough the device as it returns back to the source (not shown) through the central common split-elecfrode 330 and sandwiching common split-elecfrodes 329, 331, which now also used as a portions of energy return 322, exclusively.
  • Shielding split- elecfrodes a attachment configuration also has the possibility to bypass the propagating energies on an energy path (not shown) that could be connected by way of 325 and 326 termination structure or connection points 325 and 326 between the source (not shown) and the load 317, establishing an alternative third path way and one of lower impedance and resistance and allowing the unwanted portions of energy to flow from common split- elecfrodes, now also used as a portions of energy return 322, exclusively, rather than to the back to source (not shown).
  • Layerings found in 312 are not limited in numbers however; the common elecfrode shielding elecfrodes is desired to be an odd integer number in units used. This allows for a balance of the shielding elecfrodes 329 and 331 in this case, to be evenly distributed on each respective side of the central shielding electrode 330 are related in that the same-layered element can be used for both circuits although each circuit is quite different.
  • the difference in the circuit lays with the pre-determined attachment to external differential split-elecfrodes or paths and pre-determined attachment to common conductive structures, areas or paths when elements of the invention are combined in such a manner by industry standard insertion or attachment methods into a larger electrical system and energized.
  • Functions obtained include, but are not limited to, simultaneous, differential mode and common mode filtering, surge protection and decoupling, mutual flux cancellation of certain types of elecfromagnetic energy field propagations, containment and suppression of e & h elecfromagnetic energy field propagations, various parasitic emissions, with minimal portions of energy degradation not normally found by using prior embodiments that do not contain such elements as described in proceeding text.
  • At least three, distinctly different simultaneous energy conditioning functions will almost always occur as long as the circuit shielding of the active energy pathways within the area footprint of the sandwiching common conductive shielding energy pathways are maintained and contained within the AOC.
  • These functions can be broken down into at least three species of circuit shielding occurring simultaneously within an invention embodiment:
  • a physical Faraday cage-like effect or electrostatic shielding effect function with electrically charged containment of internally generated energy parasitics shielded from the active differential conductive energy pathways as well as providing a physical protection from externally generated energy parasitics coupling to the same active differential conductive energy pathways as well as a minimization of energy parasitics is attributed to the ahnost total energized and physical shield envelopment utilizing the insetting of the active energy pathways within the area foot print of the sandwiching common conductive shielding energy pathways;
  • each energy portion operating on one side of the central common and shared conductive energy pathway in a electrical complementary charged and/or magnetic operation will ahnost always have a parallel, non-reinforcing but complementary charged counterpart that operates in a generally opposing cancellation-type or complementary manner, simultaneously.
  • the invention will also be utilizing sandwiching electrostatic shielding functions for simultaneous complementary charged suppressions within a predefined electrodes area defined by the common electrode edges relative to the edges of the differential electrode edges to interact between or within the common conductive shield structure as has been described in this disclosure.
  • An electrically parallel fashion means with respect to the conductive energy pathways utilized by portions of energy propagated from an operating source(s) propagated to the AOC and then propagating further to the energy-utilizing source(s) and then, portions of energy are propagated from the energy-utilizing load(s) to the AOC and than portions returning by way of the AOC to Source pathways or portions are taken off through the low impedance pathway enhanced by the third conductive set of pathways that are common within the AOC and to one another that leads to the externally positioned common conductive external pathways.
  • This also includes the opposing but electrically canceling and complimentary positioning of portions of propagated energy acting upon the conductive energy pathways in a balanced manner on opposite sides of a "0" Voltage reference created simultaneously using the pivotal centrally positioned common and shared conductive elecfrode pathway.
  • This generally almost always-parallel energy distribution scheme allows the material make up of all of the manufactured invention elements to operate together more effectively and efficiently with the load and the Source pathways located within a circuit.
  • material stress in significantly reduced as compared to the prior art.
  • phenomena such as elastic material memory or hysteresis effect in minimized.
  • Piezoelectric effect is also substantially minimized for the materials that make up portions of an invention embodiment, thus energy is not detoured our inefficiently utilized internally within the AOC and is automatically available for use by the load in a largely dramatic increase in the ability of standard and common dielectric materials to perform functions within the AOC and the circuitry in a broader, less restrictive use, thus reducing costs while allowing performance levels above that of prior art.
  • minimization of both hysteresis along with control of the piezoelectric effects upon dielectric and conductive material stresses within the AOC of an invention embodiment translates or equals an increase perfonnance levels for such applications as SSO states, decoupling power systems.
  • Quicker utilization of the passive component by the active componenfry is also achieved directly attributed to these stress reductions and the complementary manner in which propagated energy is allowed to utilize the invention.
  • additional common conductive energy pathways surrounding the combination of a shared centrally positioned conductive energy pathway or surrounding a grouped placement of center conductive energy pathways and a plurality of differential conductive elecfrodes can be employed to provide an increased inherent ground and optimized Faraday cage-like function and surge dissipation area as well as increase or enhance the low impedance effect of the common conductive pathway and connection structures not considered part of the differential conductive pathways as described in all embodiments.
  • an invention embodiment could easily be fabricated in silicon and directly incorporated into integrated circuit microprocessor circuifry or chips. Integrated circuits are already being made having capacitors etched within the silicon die or semiconductor die or silicon foundation which allows the architecture of the present invention to readily be incorporated with technology available today. hi closing, it is noted that prior art energy conditioning devices normally connect between paired and external, electrically opposing differential energy pathways in a line to line placement scheme so to have an improve energy conditioning function from that of other needed prior art energy conditioning devices used elsewhere within the circuit in order to handle a high input impedance (Z) state that develops for the line to line portions of a circuit utilized by propagating circuit energies.
  • Z input impedance
  • a line to line placement scheme while indeed possessing an improve energy conditioning function, will almost always need at least two additional, prior art energy conditioning devices to be placed line to ground respectively, between each of the same external electrically opposing differential energy pathways and to a ground comiection.
  • This additional placement is required to condition the portions of propagating energies that are still requiring energy conditioning to just maintain the nominal operation of the circuit just described.
  • This need is partly due to the inherently created internal inductive circuit elements that develop within each various prior art energy conditioning devices as they are operated within the energized circuit, and are almost always present with their usage.
  • these three elements are providing simultaneous cancellation and suppression energy conditioning functions (hence, very effective filtering) for portions of propagating circuit energies within, such that the propagating circuit energies within the AOC circuit portion of a layered invention arrangement do not develop, nor do they require, any inductive circuit elements ("L") within this portion of an energized circuit.
  • energy conditioning invention embodiments will almost always provide an exponentially broader bandwidth filtering function from that of the prior art capacitors or prior art energy conditioning devices of the same size and capacitive value.
  • the shape, thickness or size may be varied depending on the electrical application derived from the arrangement of common conductive shielding elecfrode pathways and attachment structures to form at least (2) conductive containers that subsequently create at least one larger singly conductive and homogenous faraday cage-like shield structure or invention portion which in turn can contain portions of paired differential conductive electrodes or paired energy pathways in a discrete or non-discreet operating manner within at least one or more energized circuit.

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Abstract

L'invention concerne une structure (9905) de blindage conductrice commune universelle à fonctions multiples, ainsi que deux chemins (810b, 810f) d'énergie différentielle s'opposant électriquement, lesquels chemins utilisent en partie une architecture de blindage à électrode avec une progression de hiérarchie conductrice superposée comprenant des circuits pour des énergies se propageant simultanément le long de chemins jumelés et différentiels électriquement, qui utilisent la dérivation de modes de propagation d'énergie de passage.
PCT/US2001/003792 2000-02-03 2001-02-05 Structure de blindage electrostatique passive pour des circuits electriques et conditionnement d'energie avec des chemins d'energie exterieurs partiellement blindes WO2001086774A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP01908876A EP1264377A4 (fr) 2000-02-03 2001-02-05 Structure de blindage electrostatique passive pour des circuits electriques et conditionnement d'energie avec des chemins d'energie exterieurs partiellement blindes
JP2001582886A JP2003533054A (ja) 2000-02-03 2001-02-05 外側部分遮蔽エネルギー経路をもつ電気回路およびエネルギー調整用の受動静電遮蔽構造

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US09/594,447 2000-06-15
US21531400P 2000-06-30 2000-06-30
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US09/632,048 2000-08-03
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US60/248,914 2000-11-15
US25276600P 2000-11-22 2000-11-22
US60/252,766 2000-11-22
US25379300P 2000-11-29 2000-11-29
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US8543207B2 (en) 2004-12-17 2013-09-24 Cardiac Pacemakers, Inc. MRI operation modes for implantable medical devices
US8554335B2 (en) 2007-12-06 2013-10-08 Cardiac Pacemakers, Inc. Method and apparatus for disconnecting the tip electrode during MRI
US8565874B2 (en) 2009-12-08 2013-10-22 Cardiac Pacemakers, Inc. Implantable medical device with automatic tachycardia detection and control in MRI environments
CN103390484A (zh) * 2013-07-04 2013-11-13 南京航空航天大学 一种emi滤波器
US8897875B2 (en) 2007-12-06 2014-11-25 Cardiac Pacemakers, Inc. Selectively connecting the tip electrode during therapy for MRI shielding
US8977356B2 (en) 2009-02-19 2015-03-10 Cardiac Pacemakers, Inc. Systems and methods for providing arrhythmia therapy in MRI environments
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US9036319B2 (en) 1997-04-08 2015-05-19 X2Y Attenuators, Llc Arrangement for energy conditioning
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US9373592B2 (en) 1997-04-08 2016-06-21 X2Y Attenuators, Llc Arrangement for energy conditioning
US9054094B2 (en) 1997-04-08 2015-06-09 X2Y Attenuators, Llc Energy conditioning circuit arrangement for integrated circuit
US9036319B2 (en) 1997-04-08 2015-05-19 X2Y Attenuators, Llc Arrangement for energy conditioning
US9019679B2 (en) 1997-04-08 2015-04-28 X2Y Attenuators, Llc Arrangement for energy conditioning
US7356050B2 (en) 2003-12-17 2008-04-08 Siemens Aktiengesellschaft System for transmission of data on a bus
US8543207B2 (en) 2004-12-17 2013-09-24 Cardiac Pacemakers, Inc. MRI operation modes for implantable medical devices
US8886317B2 (en) 2004-12-17 2014-11-11 Cardiac Pacemakers, Inc. MRI operation modes for implantable medical devices
US9001486B2 (en) 2005-03-01 2015-04-07 X2Y Attenuators, Llc Internally overlapped conditioners
US8897875B2 (en) 2007-12-06 2014-11-25 Cardiac Pacemakers, Inc. Selectively connecting the tip electrode during therapy for MRI shielding
US8554335B2 (en) 2007-12-06 2013-10-08 Cardiac Pacemakers, Inc. Method and apparatus for disconnecting the tip electrode during MRI
US9561378B2 (en) 2008-10-02 2017-02-07 Cardiac Pacemakers, Inc. Implantable medical device responsive to MRI induced capture threshold changes
US8977356B2 (en) 2009-02-19 2015-03-10 Cardiac Pacemakers, Inc. Systems and methods for providing arrhythmia therapy in MRI environments
US8565874B2 (en) 2009-12-08 2013-10-22 Cardiac Pacemakers, Inc. Implantable medical device with automatic tachycardia detection and control in MRI environments
US9381371B2 (en) 2009-12-08 2016-07-05 Cardiac Pacemakers, Inc. Implantable medical device with automatic tachycardia detection and control in MRI environments
CN103390484A (zh) * 2013-07-04 2013-11-13 南京航空航天大学 一种emi滤波器
CN112992931A (zh) * 2021-02-04 2021-06-18 厦门天马微电子有限公司 一种阵列基板母板、阵列基板、显示面板及显示装置
CN112992931B (zh) * 2021-02-04 2022-11-15 厦门天马微电子有限公司 一种阵列基板母板、阵列基板、显示面板及显示装置
US11757421B2 (en) 2021-09-01 2023-09-12 Ge Aviation Systems Llc Circuit and method for an electrical filter

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JP2003533054A (ja) 2003-11-05
EP1264377A4 (fr) 2008-10-29

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