WO2001086038A3 - Materiaux a bande interdite photonique a base de germanium - Google Patents
Materiaux a bande interdite photonique a base de germanium Download PDFInfo
- Publication number
- WO2001086038A3 WO2001086038A3 PCT/CA2001/000621 CA0100621W WO0186038A3 WO 2001086038 A3 WO2001086038 A3 WO 2001086038A3 CA 0100621 W CA0100621 W CA 0100621W WO 0186038 A3 WO0186038 A3 WO 0186038A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- germanium
- template
- photonic
- materials
- pbg
- Prior art date
Links
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B5/00—Single-crystal growth from gels
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
- G02B6/1225—Basic optical elements, e.g. light-guiding paths comprising photonic band-gap structures or photonic lattices
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Nanotechnology (AREA)
- Biophysics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Dispersion Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Glass Melting And Manufacturing (AREA)
- Optical Integrated Circuits (AREA)
Abstract
L'invention concerne des matériaux à bande interdite photonique à base de germanium ainsi que des procédés de synthèse de matériaux à bande interdite photonique (BIP) à base de germanium. Cette synthèse et caractérisation sont celles de matériaux à bande interdite photonique (BIP) cubique à faces centrées de pur germanium, de grande qualité, à très grande échelle, possédant des BIP tridimensionnelles dans la région proche infrarouge. Deux procédés différents permettent d'obtenir ce résultat. (1) Par infiltration d'un gabarit d'opale de silice auto-assemblant avec un alcoxyde de germanium qui est ensuite soumis à hydrolyse afin de former un oxyde de germanium(IV). Ce composé est ensuite réduit à un germanium(0) dans une atmosphère hydrogène. Ce cycle est répété jusqu'à ce que l'infiltration de germanium voulue soit atteinte. Une fois que le réseau hôte de germanium est formé, le gabarit est retiré et une opale inverse de germanium est obtenue. (2) Par déposition chimique en phase vapeur de germanium dans un gabarit d'opale de silice auto-assemblant, puis par retrait du gabarit. Par cette invention, un objectif de longue date est atteint dans le domaine des matériaux photoniques et de nouvelles possibilités se présentent, permettant la commande totale des émissions radiatives des atomes et des molécules, la localisation de la lumière et l'intégration de dispositifs photoniques à l'échelle des microns dans un mini circuit intégré entièrement optique tridimensionnel.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AU2001258087A AU2001258087A1 (en) | 2000-05-05 | 2001-05-04 | Photonic bandgap materials based on germanium |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US20211500P | 2000-05-05 | 2000-05-05 | |
US60/202,115 | 2000-05-05 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2001086038A2 WO2001086038A2 (fr) | 2001-11-15 |
WO2001086038A3 true WO2001086038A3 (fr) | 2002-05-10 |
Family
ID=22748551
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/CA2001/000621 WO2001086038A2 (fr) | 2000-05-05 | 2001-05-04 | Materiaux a bande interdite photonique a base de germanium |
Country Status (2)
Country | Link |
---|---|
AU (1) | AU2001258087A1 (fr) |
WO (1) | WO2001086038A2 (fr) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA2459749A1 (fr) | 2001-09-14 | 2003-03-27 | Merck Patent Gesellschaft Mit Beschraenkter Haftung | Corps moule a partir de particules noyau-envelopppe |
DE10204339A1 (de) | 2002-02-01 | 2003-08-07 | Merck Patent Gmbh | Dehnungs- und Stauchungssensor |
DE10227071A1 (de) | 2002-06-17 | 2003-12-24 | Merck Patent Gmbh | Verbundmaterial enthaltend Kern-Mantel-Partikel |
WO2004053205A2 (fr) * | 2002-07-22 | 2004-06-24 | Massachusetts Institute Of Technolgoy | Formation de materiau poreux par depot chimique en phase vapeur sur des matrices de cristaux colloidaux |
US20040062700A1 (en) * | 2002-09-27 | 2004-04-01 | Hernan Miguez | Mechanical stability enhancement by pore size and connectivity control in colloidal crystals by layer-by-layer growth of oxide |
DE10245848A1 (de) * | 2002-09-30 | 2004-04-01 | Merck Patent Gmbh | Verfahren zur Herstellung inverser opalartiger Strukturen |
US6960255B2 (en) * | 2002-12-13 | 2005-11-01 | Lucent Technologies Inc. | Framework assisted crystal growth |
GB0302655D0 (en) | 2003-02-05 | 2003-03-12 | Univ Cambridge Tech | Deposition of layers on substrates |
US7767903B2 (en) | 2003-11-10 | 2010-08-03 | Marshall Robert A | System and method for thermal to electric conversion |
US7106938B2 (en) | 2004-03-16 | 2006-09-12 | Regents Of The University Of Minnesota | Self assembled three-dimensional photonic crystal |
DE102004052456B4 (de) * | 2004-09-30 | 2007-12-20 | Osram Opto Semiconductors Gmbh | Strahlungsemittierendes Bauelement und Verfahren zu dessen Herstellung |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5385114A (en) * | 1992-12-04 | 1995-01-31 | Milstein; Joseph B. | Photonic band gap materials and method of preparation thereof |
US5600483A (en) * | 1994-05-10 | 1997-02-04 | Massachusetts Institute Of Technology | Three-dimensional periodic dielectric structures having photonic bandgaps |
WO1999009439A1 (fr) * | 1997-08-18 | 1999-02-25 | Isis Innovation Limited | Matieres de cristal photonique et procede de preparation de celles-ci |
WO2000010040A1 (fr) * | 1998-08-11 | 2000-02-24 | Massachusetts Institute Of Technology | Cristaux photoniques composites |
WO2000021905A1 (fr) * | 1998-10-13 | 2000-04-20 | Alliedsignal Inc. | Ensembles de structures periodiques tridimensionnelles a des echelles nanometrique et superieure |
WO2001055484A2 (fr) * | 2000-01-28 | 2001-08-02 | The Governing Council Of The University Of Toronto | Matières de bande interdite photonique à base de silicium |
-
2001
- 2001-05-04 AU AU2001258087A patent/AU2001258087A1/en not_active Abandoned
- 2001-05-04 WO PCT/CA2001/000621 patent/WO2001086038A2/fr active Application Filing
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5385114A (en) * | 1992-12-04 | 1995-01-31 | Milstein; Joseph B. | Photonic band gap materials and method of preparation thereof |
US5600483A (en) * | 1994-05-10 | 1997-02-04 | Massachusetts Institute Of Technology | Three-dimensional periodic dielectric structures having photonic bandgaps |
WO1999009439A1 (fr) * | 1997-08-18 | 1999-02-25 | Isis Innovation Limited | Matieres de cristal photonique et procede de preparation de celles-ci |
WO2000010040A1 (fr) * | 1998-08-11 | 2000-02-24 | Massachusetts Institute Of Technology | Cristaux photoniques composites |
WO2000021905A1 (fr) * | 1998-10-13 | 2000-04-20 | Alliedsignal Inc. | Ensembles de structures periodiques tridimensionnelles a des echelles nanometrique et superieure |
WO2001055484A2 (fr) * | 2000-01-28 | 2001-08-02 | The Governing Council Of The University Of Toronto | Matières de bande interdite photonique à base de silicium |
Non-Patent Citations (2)
Title |
---|
BUSCH K ET AL: "Photonic band gap formation in certain self-organizing systems", PHYSICAL REVIEW E. STATISTICAL PHYSICS, PLASMAS, FLUIDS, AND RELATED INTERDISCIPLINARY TOPICS, AMERICAN INSTITUTE OF PHYSICS, NEW YORK, NY, US, vol. 58, no. 3, September 1998 (1998-09-01), pages 3896 - 3908, XP002130697, ISSN: 1063-651X * |
JOHN S ET AL: "PHOTONIC BANDGAP FORMATION AND TUNABILITY IN CERTAIN SELF-ORGANIZING SYSTEMS", JOURNAL OF LIGHTWAVE TECHNOLOGY, IEEE. NEW YORK, US, vol. 17, no. 11, November 1999 (1999-11-01), pages 1931 - 1943, XP001033253, ISSN: 0733-8724 * |
Also Published As
Publication number | Publication date |
---|---|
WO2001086038A2 (fr) | 2001-11-15 |
AU2001258087A1 (en) | 2001-11-20 |
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