WO2001082430A1 - Regle de diodes laser - Google Patents

Regle de diodes laser Download PDF

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Publication number
WO2001082430A1
WO2001082430A1 PCT/RU2000/000152 RU0000152W WO0182430A1 WO 2001082430 A1 WO2001082430 A1 WO 2001082430A1 RU 0000152 W RU0000152 W RU 0000152W WO 0182430 A1 WO0182430 A1 WO 0182430A1
Authority
WO
WIPO (PCT)
Prior art keywords
lens
radiation
external
length
laser diodes
Prior art date
Application number
PCT/RU2000/000152
Other languages
English (en)
Russian (ru)
Inventor
Viktor Viktorovich Apollonov
Sergei Igorevich Derzhavin
Vitaly Vladimirovich Kuzminov
Dmitry Alexandrovich Mashkovsky
Valery Nikolaevich Timoshkin
Vladimir Alexandrovich Filonenko
Alexandr Mikhailovich Prokhorov
Original Assignee
Zakrytoe Aktsionernoe Obschestvo 'energomashtekhnika'
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Zakrytoe Aktsionernoe Obschestvo 'energomashtekhnika' filed Critical Zakrytoe Aktsionernoe Obschestvo 'energomashtekhnika'
Priority to AU2000243220A priority Critical patent/AU2000243220A1/en
Priority to PCT/RU2000/000152 priority patent/WO2001082430A1/fr
Publication of WO2001082430A1 publication Critical patent/WO2001082430A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4062—Edge-emitting structures with an external cavity or using internal filters, e.g. Talbot filters

Definitions

  • the field of technology is available for the field of laser lasers and is designed to concentrate the energy when the radiation is separated out.
  • the best level of technology The maximum intensity of radiation at the focus of the lens is achieved if the radiation is one of a kind. and the division of the line in the physical area is made up of a single diffrent feature.
  • the operation of a single emission unit is only to be reliably increased, so that there is only one more advantageous moderation Indeed, the range of radiation offers high selective properties of the device.
  • the number of features is divided by the wide bending distribution of the intensity of a single emitter, i.e. depends on the operation of the 8th emitter and can be priced as 2- (1 / G)
  • the selectivity is ⁇ 1 / (G)
  • only 1 / (G) improvement in selective properties is driven by an increase in the number of features and people.
  • the described situation provides the main basic problem when creating a separate set of emitters with the last known warning.
  • a well-known device has at least 3 drawbacks. - ⁇ - ⁇ peruvy ⁇ .
  • the effect of the Calb ensures the separation of the radiation intensity in the direction of the parallel line, and partly exclude the voltage from the field.
  • the radius of the radius of the cylindrical cavity in the area of the pendulum ⁇ - ⁇ is selected from the condition of the radiation cut-off to the external environment.
  • Another one-day disadvantage of this device is that with an increase ⁇ to ensure a single feature is not available the width of the bending separation of the intensity of radiation of a single laser diode, i.e.
  • Reducing the radiation yield of a single laser diode leads to a reduction in energy output.
  • the purpose of this invention is to establish a device.
  • a non-technical task of the invention is to concentrate, in general, the entire energy of the radiation with the diffuse, general-purpose, wide-range, multi-function, multiple-frequency
  • the electrical parameters of the ruler (3 and ⁇ ) and the circuit breaker are selected from the condition of the switching mode.
  • Formula (10) contains an integral factor, depending on ⁇ , and a multiplier, which determines the decoupling intensity distribution.
  • the first dispersed maximum is located in the physical area in the area:
  • ⁇ The value of ⁇ is divided from the formulas for the conversion of the lens of the Gaussian beam. Let the original switchgear be set to ⁇ 0 . After using a lens with a focal distance, the adapter is removed to remove the ⁇ . The connection between the parameters of the system is divided from the formulas (House X. Complete and field in the electronics. 1988. 1988):
  • ⁇ 2 ⁇ "/ ⁇ - ⁇ ass ⁇ yanie ⁇ alb ⁇ ⁇ a ⁇ im ⁇ b ⁇ az ⁇ m for ⁇ izv ⁇ ln ⁇ g ⁇ ⁇ e ⁇ itsien ⁇ a za ⁇ lneniya liney ⁇ i D ies r ⁇ all ene ⁇ giya ⁇ ntsen ⁇ i ⁇ ue ⁇ sya in tsen ⁇ alny ⁇ ich ⁇ in the rear lens ⁇ aln ⁇ y ⁇ l ⁇ s ⁇ s ⁇ i January 1 ⁇ i vy ⁇ lnenii usl ⁇ vy (15, 16, 18)...
  • ⁇ a ⁇ ig. 1 shows the scheme of radiation emission of a syn- thesome device from a separate external line of a ruler with a Gaussian output of each emitter, where: 1, 2 is a line.
  • FIG. 10 A schematic diagram of a device for the selection of a synchronous system of linear arrays of external lasers in an external (in- 10
  • the separation of the intensity of radiation in the rear optical area of the lens is composed of a diffraction factor of 12 with an optical distance of 4 cm, an increased BEST MODE FOR CARRYING OUT THE INVENTION
  • the proposed device operates the following way.
  • the radiation of line 1 (Fig. 4) of laser diodes 2,3,4,5 is consumed due to the diffraction of the output of the output.
  • a cylindrical glass lens 7 is installed in front of the line, which ensures radiation minimization in the plane, pendicular ⁇ - ⁇ transition.
  • the radiation is emitted 9, but it is free of direct contact with the ambient light, and 8 external res.
  • the external end of the line is illuminated by 6.
  • Synchronization of laser radiation occurs due to the diffuse exchange of radiation in the environment due to the external power supply
  • a diverse range of radiation from a synthesized device made up of a wide range of laser lasers emitting a primary mn ⁇ g ⁇ m ⁇ d ⁇ v ⁇ e radiation ⁇ e ⁇ echn ⁇ m na ⁇ avlenii, d ⁇ s ⁇ igae ⁇ sya on account ⁇ e ⁇ ev ⁇ da ⁇ ab ⁇ y laze ⁇ ny ⁇ di ⁇ d ⁇ v of mn ⁇ g ⁇ m ⁇ d ⁇ v ⁇ g ⁇ in ⁇ dn ⁇ m ⁇ d ⁇ vy with gauss ⁇ vs ⁇ im ⁇ as ⁇ edeleniem in ⁇ e ⁇ echn ⁇ m na ⁇ avlenii, ch ⁇ ⁇ ealiz ⁇ van ⁇ v ⁇ external ⁇ ez ⁇ na ⁇ e without znachi ⁇ eln ⁇ g ⁇ reduce m ⁇ schn ⁇ s ⁇ i and ⁇ imeneniya dia ⁇ agm ⁇ i
  • a glass cylindrical lens with a diameter of 0 350 ⁇ m was arranged at a distance of ⁇ 500 ⁇ m from the emitting line of the line and ensured the accumulation of radiation in the field. pendicular ⁇ - ⁇ transition.
  • the circuitry which is connected to an external device, is based on a laser-emitting line.
  • the invention may be used in a military-optical communication. medicine, processing and processing materials.

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

L'invention relève des lasers semi-conducteurs et peut s'utiliser dans la communication par fibres optiques, la médecine et pour le traitement de matériaux. Le but de l'invention est de concentrer en une rayure toute l'énergie de rayonnement, avec une divergence par diffraction d'une puissante règle de diodes laser à ouverture large et à capacité multimodale dans une direction transversale. Dans cette règle, disposée dans un résonateur extérieur, on utilise des diodes laser à ouverture large et à capacité multimodale. Les paramètres géométriques du milieu actif et du résonateur sont sélectionnés de manière à faire basculer une diode laser entre le mode multimodal et le mode monomodal en direction transversale, à l'intérieur d'un résonateur externe, les nombres de Fresnel étant égaux à Nf=(S/2)2/μ L < 1, dans laquelle S est la largeur de la bande de la diode laser, μ est la longueur de l'onde de rayonnement, L est la longueur du résonateur. Le résonateur externe assure la sélection d'un mode principal ayant une distribution gaussienne dans le sens transversal pour un dispositif de rayonnement unique à ouverture large ainsi qu'une sélection de supermodes pour une règle en phase. La distance entre la lentille et l'étranglement de départ ayant une dimension W0 est bien plus importante que la distance focale de la lentille ainsi que le paramètre de longueur de Raleigh πW02/μ; de cette manière, l'ouverture angulaire de l'étranglement transformé est inférieure à la direction angulaire vers la première rayure de diffraction, ce qui permet de supprimer son intensité ainsi que l'intensité des rayures d'un ordre plus élevé.
PCT/RU2000/000152 2000-04-26 2000-04-26 Regle de diodes laser WO2001082430A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
AU2000243220A AU2000243220A1 (en) 2000-04-26 2000-04-26 Laser diode strip
PCT/RU2000/000152 WO2001082430A1 (fr) 2000-04-26 2000-04-26 Regle de diodes laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/RU2000/000152 WO2001082430A1 (fr) 2000-04-26 2000-04-26 Regle de diodes laser

Publications (1)

Publication Number Publication Date
WO2001082430A1 true WO2001082430A1 (fr) 2001-11-01

Family

ID=20129503

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/RU2000/000152 WO2001082430A1 (fr) 2000-04-26 2000-04-26 Regle de diodes laser

Country Status (2)

Country Link
AU (1) AU2000243220A1 (fr)
WO (1) WO2001082430A1 (fr)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5027359A (en) * 1989-10-30 1991-06-25 Massachusetts Institute Of Technology Miniature Talbot cavity for lateral mode control of laser array
US5033054A (en) * 1990-08-17 1991-07-16 Spectra Diode Laboratories, Inc. Phase conjugate laser
RU2105399C1 (ru) * 1996-12-03 1998-02-20 Государственное научно-производственное предприятие "Прибор" Твердотельный лазер с накачкой лазерными диодами

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5027359A (en) * 1989-10-30 1991-06-25 Massachusetts Institute Of Technology Miniature Talbot cavity for lateral mode control of laser array
US5033054A (en) * 1990-08-17 1991-07-16 Spectra Diode Laboratories, Inc. Phase conjugate laser
RU2105399C1 (ru) * 1996-12-03 1998-02-20 Государственное научно-производственное предприятие "Прибор" Твердотельный лазер с накачкой лазерными диодами

Also Published As

Publication number Publication date
AU2000243220A1 (en) 2001-11-07

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