WO2001054236A2 - Source de radiation basee sur des diodes laser - Google Patents

Source de radiation basee sur des diodes laser Download PDF

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Publication number
WO2001054236A2
WO2001054236A2 PCT/RU2001/000026 RU0100026W WO0154236A2 WO 2001054236 A2 WO2001054236 A2 WO 2001054236A2 RU 0100026 W RU0100026 W RU 0100026W WO 0154236 A2 WO0154236 A2 WO 0154236A2
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Prior art keywords
radiation
source
laser
diοdοv
lazeρnyχ
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PCT/RU2001/000026
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English (en)
Russian (ru)
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WO2001054236A3 (fr
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Vladimir Vadimovich Solodovnikov
Viktor Mikhailovich Zhilin
Mikhail Vitalievich Lebedev
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Rayteq Lasers Industries Ltd.
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Priority to AU2001232502A priority Critical patent/AU2001232502A1/en
Publication of WO2001054236A2 publication Critical patent/WO2001054236A2/fr
Publication of WO2001054236A3 publication Critical patent/WO2001054236A3/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H01S5/146—External cavity lasers using a fiber as external cavity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4062—Edge-emitting structures with an external cavity or using internal filters, e.g. Talbot filters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength

Definitions

  • the present invention is limited to the quantum electric, and it is the registered, high-quality, incidental source of the emitted by the laser.
  • yavlyae ⁇ sya is ⁇ chni ⁇ m radiation anam ⁇ n ⁇ g ⁇ , ch ⁇ ⁇ znachae ⁇ , ch ⁇ eg ⁇ ⁇ as ⁇ dim ⁇ s ⁇ in ⁇ l ⁇ s ⁇ s ⁇ ya ⁇ , ⁇ a ⁇ allelny ⁇ ⁇ e ⁇ endi ⁇ ulya ⁇ ny ⁇ and ⁇ - ⁇ ⁇ e ⁇ e ⁇ du, susches ⁇ venn ⁇ ⁇ azlichny.
  • ⁇ aib ⁇ lee bliz ⁇ im yavlyae ⁇ sya is ⁇ chni ⁇ radiation ⁇ sn ⁇ ve laze ⁇ ny ⁇ di ⁇ d ⁇ v [Pa ⁇ en ⁇ SSH ⁇ 5463534 ⁇ , 1995, ⁇ 04 ⁇ 7/04, 362/32], ⁇ y v ⁇ lyuchae ⁇ s ⁇ v ⁇ u ⁇ n ⁇ s ⁇ laze ⁇ ny ⁇ di ⁇ d ⁇ v, ⁇ ien ⁇ i ⁇ vanny ⁇ d ⁇ ug ⁇ n ⁇ si ⁇ eln ⁇ d ⁇ uga and ⁇ n ⁇ si ⁇ eln ⁇ ⁇ iches ⁇ y sis ⁇ emy, ⁇ ednaznachenn ⁇ y for ⁇ e ⁇ b ⁇ az ⁇ vaniya v ⁇ dyaschi ⁇ into it radiation laze ⁇ ny ⁇ di ⁇ d ⁇ v in the unified output beam of optical radiation.
  • the emitting area of laser diodes is usually the only emitting area that has a right angle ⁇ ⁇ 01/54236
  • the optical system contains a component located between the emitting sources and the area of focus.
  • the product is subject to radiation hazard and radiation hazard. Immediate loss of radiation includes a medium of radiation in the case of transmittance, incident radiation, and other significant radiation Also, in the case of fraud, they enter a set of cylinders, cylindrical telescopes for the creation of a united exit beam.
  • vv ⁇ di maya radiation m ⁇ schn ⁇ s ⁇ 26 ⁇ 200-mi ⁇ nnuyu se ⁇ dtsevinu ⁇ iches ⁇ g ⁇ v ⁇ l ⁇ na with a ⁇ e ⁇ u ⁇ y ⁇ , ⁇ avn ⁇ y 0.2. This value corresponds to a brightness of 5 / ⁇ / (cm 2 s ⁇ ).
  • ⁇ ⁇ sn ⁇ vu iz ⁇ b ⁇ e ⁇ eniya ⁇ s ⁇ avlena task s ⁇ zdaniya is ⁇ chni ⁇ a radiation ⁇ sn ⁇ ve laze ⁇ ny ⁇ di ⁇ d ⁇ v s ⁇ s ⁇ abilnym ⁇ dn ⁇ chas ⁇ nym radiation vy ⁇ dn ⁇ g ⁇ edin ⁇ g ⁇ ⁇ uch ⁇ a radiation ⁇ iches ⁇ g ⁇ and s ⁇ abilizatsii eg ⁇ emitting m ⁇ schn ⁇ s ⁇ i with enlarged s ⁇ e ⁇ aln ⁇ y and ene ⁇ ge ⁇ iches ⁇ y ya ⁇ s ⁇ yu vy ⁇ dn ⁇ g ⁇ edin ⁇ g ⁇ ⁇ uch ⁇ a, umenshenn ⁇ y ⁇ as ⁇ dim ⁇ s ⁇ yu in ⁇ bei ⁇ ⁇ e ⁇ endi ⁇ ulya ⁇ ny ⁇ ⁇ l ⁇ s ⁇ s ⁇ ya ⁇ , ⁇ vyshenn ⁇ y na ⁇ a
  • a source of radiation on the main laser sources is provided, v ⁇ lyuchayuschy s ⁇ v ⁇ u ⁇ n ⁇ s ⁇ laze ⁇ ny ⁇ di ⁇ d ⁇ v, ⁇ ien ⁇ i ⁇ vanny ⁇ d ⁇ ug ⁇ n ⁇ si ⁇ eln ⁇ d ⁇ uga and ⁇ n ⁇ si ⁇ eln ⁇ ⁇ iches ⁇ y sis ⁇ emy, ⁇ ednaznachenn ⁇ y for ⁇ e ⁇ b ⁇ az ⁇ vaniya v ⁇ dyaschi ⁇ into it ⁇ uch ⁇ v radiation laze ⁇ ny ⁇ di ⁇ d ⁇ v in vy ⁇ dn ⁇ y single ⁇ uch ⁇ ⁇ iches ⁇ g ⁇ radiation ⁇ ichem ⁇ lnaya shi ⁇ ina s ⁇ e ⁇ a vy ⁇ dn ⁇ g ⁇ edin ⁇ g ⁇ ⁇ uch ⁇ a radiation ⁇ iches ⁇ g ⁇ s ⁇ v ⁇ u ⁇ n ⁇ s ⁇ i laze ⁇ ny ⁇
  • laser diode an injection laser is used with a wide emitting area, in the cusp, with short outputs.
  • specifying a medium or “specifying a laser”, meaning a means of pumping, i.e.
  • radiation is emitted from a pump, which is referred to as “emitting”, emitted from the laser.
  • the essential product of the invention is the generation of a high-volume, single-source, laser-based source of light emitted by a laser emitting radiation.
  • a range of wavelengths for laser diodes is selected, which separates the output signal of a single beam of optical radiation from a source of radiation (a performing laser).
  • a source of radiation a performing laser
  • the task posed is also solved by the fact that the capacity of the mastering one-dimensional radiation, which is incident on each laser diode, is removed from the range of 1 m ... ... 100 m. With this, stabilization of the output power of the single source of radiation from the main laser is ensured.
  • the task posed is solved in the various applications of radiation sources at the base of the laser, with the impact on the low-frequency laser radiation.
  • ⁇ ⁇ e ⁇ v ⁇ m is ⁇ lnenii specifying s ⁇ eds ⁇ v ⁇ vy ⁇ lnen ⁇ as laze ⁇ n ⁇ g ⁇ di ⁇ da with ⁇ dn ⁇ m ⁇ d ⁇ vym and ⁇ dn ⁇ chas ⁇ nym vy ⁇ dnym radiation ⁇ as ⁇ l ⁇ zhennym vmes ⁇ ⁇ dn ⁇ g ⁇ of laze ⁇ ny ⁇ di ⁇ d ⁇ v is ⁇ chni ⁇ a radiation and ⁇ a ⁇ zhe chas ⁇ ichn ⁇ ⁇ azhayuscheg ⁇ s ⁇ eds ⁇ va, ⁇ meschenn ⁇ g ⁇ in mn ⁇ g ⁇ m ⁇ d ⁇ v ⁇ e ⁇ iches ⁇ e v ⁇ l ⁇ n ⁇ on ⁇ ass ⁇ yanii ⁇ v ⁇ dn ⁇ g ⁇ ⁇ ntsa mn ⁇ g ⁇ m ⁇ d ⁇ v ⁇ g ⁇ ⁇ iches ⁇ g ⁇ v ⁇ l ⁇ na and ⁇ i ⁇ me u ⁇ lad
  • One of the modifications of the first version is to be partially partially carried out in the form of the area of the whole cross-section of the whole.
  • Other modifications to the device are intended to be partially dealt with by the user in the form of a differential circuit.
  • an external optical connection arises. If it is emitted from a source of laser radiation, it may be effective if the source of radiation is emitted, but the laser emits a light source.
  • the radiation emitted by such a one-way laser diode affects all laser diodes of the radiation source through an external optical coupling.
  • the sect is an excellent one-off bunch to become close to the one-night.
  • Introducing the laser dosing device into the source of radiation has made it possible to create a compact, small oversized light output.
  • ⁇ v ⁇ m is ⁇ lnenii ⁇ edl ⁇ zhen ⁇ specifying s ⁇ eds ⁇ v ⁇ vy ⁇ lnya ⁇ as v ⁇ l ⁇ nn ⁇ g ⁇ ⁇ dn ⁇ m ⁇ d ⁇ v ⁇ g ⁇ and ⁇ dn ⁇ chas ⁇ n ⁇ g ⁇ laze ⁇ a on ⁇ dn ⁇ m ⁇ d ⁇ v ⁇ y tsen ⁇ aln ⁇ y vein, ⁇ as ⁇ l ⁇ zhenn ⁇ y in mn ⁇ g ⁇ m ⁇ d ⁇ v ⁇ m ⁇ iches ⁇ m v ⁇ l ⁇ ne, ⁇ uzhayuschem u ⁇ azannuyu vein, ⁇ ichem ⁇ ez ⁇ na ⁇ v ⁇ l ⁇ nn ⁇ g ⁇ laze ⁇ a ⁇ g ⁇ anichen di ⁇ a ⁇ tsi ⁇ nnymi ⁇ eshe ⁇ ami, s ⁇ mi ⁇ vannymi on ⁇ dn ⁇ m ⁇ d ⁇ v ⁇ y tsen ⁇ aln ⁇ y core of ⁇ y ⁇
  • ⁇ ⁇ e ⁇ em is ⁇ lnenii ⁇ edl ⁇ zhen ⁇ mn ⁇ g ⁇ m ⁇ d ⁇ v ⁇ e ⁇ iches ⁇ e v ⁇ l ⁇ n ⁇ on ⁇ ntse, ⁇ iv ⁇ l ⁇ zhn ⁇ m v ⁇ dn ⁇ mu, ⁇ mi ⁇ va ⁇ in the form y - ⁇ azve ⁇ vi ⁇ elya, K ⁇ ntsu ⁇ dn ⁇ y chas ⁇ i ⁇ g ⁇ ⁇ ds ⁇ edinen ⁇ specifying s ⁇ eds ⁇ v ⁇ , vy ⁇ lnenn ⁇ e as v ⁇ l ⁇ nn ⁇ g ⁇ ⁇ dn ⁇ m ⁇ d ⁇ v ⁇ g ⁇ and ⁇ dn ⁇ chas ⁇ n ⁇ g ⁇ laze ⁇ a on ⁇ dn ⁇ m ⁇ d ⁇ v ⁇ y tsen ⁇ aln ⁇ y vein, ⁇ as ⁇ l ⁇ zhenn ⁇ y in mn ⁇ g ⁇ m ⁇ d ⁇ v ⁇ m ⁇ iches ⁇ m
  • P ⁇ s ⁇ avlennaya task ⁇ eshae ⁇ sya ⁇ a ⁇ zhe ⁇ em, ch ⁇ emitting ⁇ blas ⁇ i laze ⁇ ny ⁇ di ⁇ d ⁇ v is ⁇ chni ⁇ a radiation vy ⁇ lneny as izluchayuschi ⁇ ⁇ l ⁇ s ⁇ , tsen ⁇ y ⁇ y ⁇ ⁇ eimusches ⁇ venn ⁇ ⁇ as ⁇ l ⁇ zheny in ⁇ l ⁇ s ⁇ s ⁇ i, ⁇ e ⁇ endi ⁇ ulya ⁇ n ⁇ y long s ⁇ nam izluchayuschi ⁇ ⁇ l ⁇ s ⁇ , ⁇ i e ⁇ m ⁇ iches ⁇ aya sis ⁇ ema vy ⁇ lnena as ⁇ b ⁇ azhayuscheg ⁇ s ⁇ eds ⁇ va, ⁇ meschonn ⁇ g ⁇ between laze ⁇ nymi di ⁇ dami and z ⁇ n ⁇ y ⁇ usi ⁇ v ⁇ i and complying with the directive
  • the number of laser diodes is seperated from the range of 0.5 ⁇ ... 1, 5 ⁇ , where ⁇ is chosen integer from the condition ⁇ ⁇ 01/5 4236
  • ⁇ [a • z ⁇ ( ⁇ a / 2)] / [L • sin ( ⁇ s / 2)], where a and b - ⁇ azme ⁇ y izluchayuschi ⁇ ⁇ l ⁇ s ⁇ laze ⁇ ny ⁇ di ⁇ d ⁇ v, s ⁇ ve ⁇ s ⁇ venn ⁇ , dlinn ⁇ y and ⁇ y s ⁇ n, and ⁇ a and ⁇ - angles of proximity, respectively, in the case of flat, parallel long and short emitting laser paths.
  • the indicated result is the emitting of a cross-section of the output of a single beam of a single-source radiation of a source of radiation from a primary laser.
  • P ⁇ s ⁇ avlennaya task ⁇ eshae ⁇ sya ⁇ a ⁇ zhe ⁇ em, ch ⁇ s ⁇ eds ⁇ v ⁇ ⁇ e ⁇ en ⁇ sa ⁇ edl ⁇ zhen ⁇ s ⁇ mi ⁇ va ⁇ ⁇ a ⁇ im ⁇ b ⁇ az ⁇ m, ch ⁇ by therein ⁇ iches ⁇ ie ⁇ si ⁇ uch ⁇ v radiation laze ⁇ ny ⁇ di ⁇ d ⁇ v were ⁇ a ⁇ allelny d ⁇ ug d ⁇ ugu- ⁇ me ⁇ g ⁇ s ⁇ eds ⁇ v ⁇ ⁇ e ⁇ en ⁇ sa ⁇ edl ⁇ zhen ⁇ vybi ⁇ a ⁇ s ⁇ s ⁇ e ⁇ enyu ⁇ e ⁇ e ⁇ y ⁇ iya ⁇ uch ⁇ v, ⁇ edelenn ⁇ y dia ⁇ az ⁇ ne in 10% ...
  • optical length is short and the output distance of each laser-mode is slightly different.
  • Particularly suitable for the transmission of radiation is the partial conversion of adjacent radiation beams from individual laser devices (optical All of these emissions are parallel between themselves). This allows you to receive a single, integrated, high-quality light beam with improved directional radiation source.
  • the use of the direct proximity of the transmitter to the direct radiation of the emitter is inimitable to In this case, there is no risk of gaining ground power, which is applicable to each laser diode (1 month ... 10 minutes), and emit radiation is emitted.
  • a schematic illustration of the first version of the radiation source is based on a primary laser source with a direct-coupled emitting radiation.
  • Fig. 2 shows a view of a basic and practical optical scheme of a short-term high source of radiation (without a direct emitting source).
  • Fig. 3 a view is shown of a basic optical scheme of the recommended high source of radiation (without a direct emissive).
  • ⁇ a ⁇ ig.4 s ⁇ ema ⁇ ichn ⁇ iz ⁇ b ⁇ azhen ⁇ v ⁇ e is ⁇ lnenie ⁇ edl ⁇ zhenn ⁇ g ⁇ is ⁇ chni ⁇ a radiation ⁇ sn ⁇ ve laze ⁇ ny ⁇ di ⁇ d ⁇ v with setpoint s ⁇ eds ⁇ v ⁇ m radiation ⁇ dn ⁇ chas ⁇ n ⁇ g ⁇ - ⁇ dn ⁇ chas ⁇ nym v ⁇ l ⁇ nnym laze ⁇ m, na ⁇ achivaemym laze ⁇ nym di ⁇ d ⁇ m, us ⁇ an ⁇ vlennym in radiation is ⁇ chni ⁇ e.
  • Fig. 5 a schematic illustration of the operation of a coupled source of radiation from a primary laser with a reference emissive radiation is used
  • Fig. 6 the spectral dependences of the intensity of the radiation of the radiation source on the main laser devices are shown without ⁇ ⁇ 01/54236 ⁇ / ⁇ / 00026
  • ⁇ a ⁇ ig.7 iz ⁇ b ⁇ azheny s ⁇ e ⁇ alnye zavisim ⁇ s ⁇ i in ⁇ ensivn ⁇ s ⁇ i radiation is ⁇ chni ⁇ a radiation ⁇ sn ⁇ ve laze ⁇ ny ⁇ di ⁇ d ⁇ v ⁇ a ⁇ without zadayuscheg ⁇ s ⁇ eds ⁇ va - is ⁇ dny s ⁇ e ⁇ (in s ⁇ ve ⁇ s ⁇ vii with ⁇ ig.2 and ⁇ ig.Z), and with a driving ⁇ a ⁇ s ⁇ eds ⁇ v ⁇ m ⁇ dn ⁇ chas ⁇ n ⁇ g ⁇ radiation ⁇ e ⁇ eg ⁇ is ⁇ lneniya (in s ⁇ ve ⁇ s ⁇ vii with ⁇ ig.
  • ⁇ a ⁇ ig.8 iz ⁇ b ⁇ azheny s ⁇ e ⁇ alnye zavisim ⁇ s ⁇ i in ⁇ ensivn ⁇ s ⁇ i radiation is ⁇ chni ⁇ a radiation ⁇ sn ⁇ ve laze ⁇ ny ⁇ di ⁇ d ⁇ v ⁇ a ⁇ without zadayuscheg ⁇ s ⁇ eds ⁇ va - is ⁇ dny s ⁇ e ⁇ (in s ⁇ ve ⁇ s ⁇ vii with ⁇ ig.2 and ⁇ ig.Z), and with a driving ⁇ a ⁇ s ⁇ eds ⁇ v ⁇ m ⁇ dn ⁇ chas ⁇ n ⁇ g ⁇ radiation ⁇ e ⁇ eg ⁇ is ⁇ lneniya (in s ⁇ ve ⁇ s ⁇ vii with ⁇ ig.
  • ⁇ a ⁇ ig.9 iz ⁇ b ⁇ azhena zavisim ⁇ s ⁇ in ⁇ ensivn ⁇ s ⁇ i is ⁇ chni ⁇ a radiation ⁇ sn ⁇ ve laze ⁇ ny ⁇ di ⁇ d ⁇ v with setpoint s ⁇ eds ⁇ v ⁇ m ⁇ dn ⁇ chas ⁇ n ⁇ g ⁇ radiation ⁇ e ⁇ eg ⁇ is ⁇ lneniya ⁇ m ⁇ schn ⁇ s ⁇ i vv ⁇ dim ⁇ g ⁇ zadayuscheg ⁇ radiation (u ⁇ azany ⁇ azlichnye values ⁇ a na ⁇ ach ⁇ i laze ⁇ n ⁇ g ⁇ di ⁇ da, na ⁇ achivayuscheg ⁇ v ⁇ l ⁇ nny laze ⁇ ) for dvu ⁇ values ⁇ ass ⁇ glas ⁇ vanie tsen ⁇ v ⁇ yazhes ⁇ i s ⁇ e ⁇ v is ⁇ lnyayuscheg ⁇ and zadayuscheg ⁇ laze ⁇ v (
  • a spectral dependence of the intensity of the radiation source on the primary laser sources with the reference instantaneous radiation of the operating system is shown. ⁇ ⁇ 01/54236
  • the ampoules are emitted by sources of radiation from a laser source depending on the frequency of the emitted emissivity:
  • a practical turn-around device complies with a power equal to 0.1 ⁇ ⁇ /, a medium pumping a laser;
  • a dotted circle corresponds to a power equal to 0.5 ⁇ ⁇ /, of a medium pumping a laser.
  • the proposed source of radiation from a basic laser diode is composed of an operating laser 1 emitting at a wavelength of 1060 nm, from which an output of 3 Dann ⁇ e specifying s ⁇ eds ⁇ v ⁇ 3 s ⁇ s ⁇ i ⁇ of chas ⁇ ichn ⁇ ⁇ azhayuscheg ⁇ s ⁇ eds ⁇ va 4 and zadayuscheg ⁇ ⁇ dn ⁇ chas ⁇ n ⁇ g ⁇ and ⁇ dn ⁇ m ⁇ d ⁇ v ⁇ g ⁇ laze ⁇ n ⁇ g ⁇ di ⁇ da 5 ⁇ y izluchae ⁇ v ⁇ lny a length of 1,060 nm and a ⁇ meschen is ⁇ lnyayuschy laze ⁇ 1.
  • S ⁇ ve ⁇ s ⁇ venn ⁇ was ⁇ d ⁇ b ⁇ ana di ⁇ a ⁇ tsi ⁇ nnaya ⁇ eshe ⁇ a 4, which chas ⁇ ichn ⁇ ⁇ azhayuschim s ⁇ eds ⁇ v ⁇ m 4 and us ⁇ an ⁇ vlena in mn ⁇ g ⁇ m ⁇ d ⁇ v ⁇ m ⁇ iches ⁇ m v ⁇ l ⁇ ne 6 ⁇ ebuem ⁇ m ⁇ ass ⁇ yanii ⁇ eg ⁇ v ⁇ da ⁇ i zadann ⁇ y ⁇ me u ⁇ a ⁇ v ⁇ i u ⁇ myanu ⁇ g ⁇ v ⁇ l ⁇ na.
  • Laser diode 4 is placed in the emitting laser instead of one of the laser diodes 6 of the operating laser 1.
  • ⁇ izves ⁇ ny ⁇ is ⁇ chni ⁇ a ⁇ radiation (see., Na ⁇ ime ⁇ [ ⁇ a ⁇ en ⁇ SSH ⁇ 5463534 ⁇ , 1995, ⁇ 04 ⁇ 7/04, 362 / 32i d ⁇ .])
  • ⁇ ye m ⁇ gu ⁇ by ⁇ is ⁇ lz ⁇ vany in ⁇ edl ⁇ zhenn ⁇ m us ⁇ ys ⁇ ve, s ⁇ v ⁇ u ⁇ n ⁇ s ⁇ laze ⁇ ny ⁇ di ⁇ d ⁇ v s ⁇ g ⁇ ⁇ ien ⁇ i ⁇ vana d ⁇ ug ⁇ n ⁇ si ⁇ eln ⁇ d ⁇ uga.
  • For laser lasers 13 radiating area Usually it is radiating areas with a rectangular cross-section.
  • Laser diodes are also equipped with a separate optical system designed for the processing of radiation emitted by it from the industrial radiation
  • the optical system normally consumes a medium located between the emitting sources and the source of radiation, due to radiation Immediate disruption of the radiation includes a means of increasing radiation in the perpendicular aperture, in parallel with the radiating aperture. They may be disposed of as a result of poorly accessible external laser diodes, as well as are separated by other optical elements.
  • Laser diodes 6 injection laser with a wide emitting area, in the body, with direct outputs
  • a number of laser diodes 6 are selected from the range 0.5 ⁇ ... 1, 5 ⁇ , where ⁇ calculated ⁇ ⁇ ((( ⁇ a / 2) / ], where a and b - ⁇ azme ⁇ y izluchayuschi ⁇ ⁇ l ⁇ s ⁇ laze ⁇ ny ⁇ di ⁇ d ⁇ v 6 s ⁇ ve ⁇ s ⁇ venn ⁇ , and dlinn ⁇ y ⁇ y s ⁇ n, and ⁇ a and ⁇ - angle ⁇ as ⁇ dim ⁇ s ⁇ i, s ⁇ ve ⁇ s ⁇ venn ⁇ in ⁇ l ⁇ s ⁇ s ⁇ ya ⁇ , ⁇ a ⁇ allelny ⁇ dlinn ⁇ y and ⁇ y s ⁇ nam izluchayuschi ⁇ ⁇ l ⁇ s ⁇ laze ⁇ ny ⁇ di ⁇ d ⁇ v 6.
  • a parallel optical device is paralleled.
  • the entrance to the front of the phone is in the form of a handy device that is connected to a
  • Each take-up cover 8 of the transfer agent 9 emits the most bright part of the radiation incident on it and cuts off this part. With this, the direction of each beam of laser radiation 6 is changed (“the beam is processed”), as well as all of the beam of laser radiation is changed. Partial emissions are partially excluded by about 20% in this particular example.
  • the system is processed by low temperatures.
  • the final radiation of CF 1 does not contain the emission between the neighboring radiation beams of the individual laser diodes 6. The result is a more uniform output.
  • the proposed radiation source made it possible to obtain a special value of 10 NT in a 50-micron core with an initial value of 0.22. This corresponds to a speed of 40 ⁇ / / (cm 2 sr). Please note that the energy intensity of a typical laser diode is more than 100 ⁇ / (cm 2 • s ⁇ ). It seems that the energy of our system from many laser diodes comes to this value.
  • C ⁇ 1 In the first version of C ⁇ 1, it was connected to the optical wave 5, in which a partial deflecting solution 3 was switched on (see Fig. 1).
  • the device was equipped with the following equipment. With laser diodes 6 ⁇ F 1, they were pumped for the generation of many laser radiation.
  • the laser diode 4 also provided pumping power for receiving one- and one-off laser radiation.
  • a single exit kit is included in the large-user equipment. 5 ⁇ ⁇ 01/54236,
  • ⁇ v ⁇ m is ⁇ lnenii ( ⁇ ig.5) S ⁇ ⁇ is ⁇ edinen ⁇ 1 was 1061 nm and ⁇ dn ⁇ m ⁇ d ⁇ v ⁇ mu ⁇ dn ⁇ chas ⁇ n ⁇ mu v ⁇ l ⁇ nn ⁇ mu laze ⁇ u 13 s ⁇ mi ⁇ vann ⁇ mu on ⁇ dn ⁇ m ⁇ d ⁇ v ⁇ y tsen ⁇ aln ⁇ y conductor (9 se ⁇ dtsevine diame ⁇ m m ⁇ m) dv ⁇ yn ⁇ g ⁇ ⁇ iches ⁇ g ⁇ v ⁇ l ⁇ na with ⁇ m ⁇ schyu di ⁇ a ⁇ tsi ⁇ nny ⁇ v ⁇ l ⁇ nny ⁇ ⁇ eshe ⁇ and na ⁇ achivaem ⁇ mu radiation with 980 nm dlin ⁇ y v ⁇ lny laser diode 14 from CF 1.
  • one of the laser diodes 6 CF 1 is replaced by laser diode 14, which is the source of the laser diode.
  • laser diode 14 which is the source of the laser diode.
  • ⁇ F 1 was connected in the area of the optional multiplexer 5 with the optional 17 to the optional port.
  • One end of the 19th coupler 17 was activated with a sharp 1061nm laser laser 13, which was equipped with ⁇ ⁇ 01/54236 ⁇ / ⁇
  • Sector 17 was used to output the converted single output beam of C ⁇ 1.
  • the radiation area of the master laser was measured using two calibrated and 5 ⁇ cameras, and its circuit was analyzed with an integrated circuit and an external All the information received was transmitted to the computer, which made it possible to accumulate information and to operate in real time.
  • Fig. 6 the radiation pattern of the system in the first version is shown (turning 22), which was recorded on a free output of optical 5 (see Fig. 1).
  • the initial radiation spectrum of C ⁇ 1 (by turning 23) is preceded by a connection to the optical waveguide 5 with a diffuse optical frequency, which is partly impaired by 3 nm.
  • the dispersion pattern of the diffuse grating 3 (partially discharged medium) is also shown in Fig. 6 (turning 24).
  • the spectrometer has a nice lambda and is short, so that it is long.
  • the proposed device solves the posed problem.
  • laser diode 4 in the master device is not always desirable due to the low stability of the product. Significantly better for these purposes is to use a portable laser, with highly stable single-mode and single-type processors.
  • G ⁇ a ⁇ iches ⁇ aya zavisim ⁇ s ⁇ s ⁇ e ⁇ a is ⁇ lnyayuscheg ⁇ laze ⁇ a 1 ⁇ ⁇ a na ⁇ ach ⁇ i zadayuscheg ⁇ laze ⁇ a 2 iz ⁇ b ⁇ azhena on ⁇ igu ⁇ a ⁇ 7 and 8 for dvu ⁇ ⁇ ass ⁇ glas ⁇ vany tsen ⁇ v ⁇ yazhes ⁇ ey s ⁇ e ⁇ v between is ⁇ lnyayuschim 1 (sh ⁇ i ⁇ - ⁇ un ⁇ i ⁇ nye ⁇ yamye v ⁇ lny 25 for the length?
  • P ⁇ i issled ⁇ vanii zavisim ⁇ s ⁇ i vy ⁇ dn ⁇ y m ⁇ schn ⁇ s ⁇ i is ⁇ lnyayuscheg ⁇ laze ⁇ a 1 length v ⁇ lny zadayuscheg ⁇ laze ⁇ a 2 ⁇ m ⁇ schn ⁇ s ⁇ i zadayuscheg ⁇ laze ⁇ a 2 (sm. ⁇ ig.9) yasn ⁇ nablyudae ⁇ sya e ⁇ e ⁇ saturation gene ⁇ atsii ⁇ i ⁇ a is ⁇ lnyayuscheg ⁇ laze ⁇ a 1 ( ⁇ a ⁇ for ⁇ , ⁇ avn ⁇ y 10 nm - white ⁇ uzh ⁇ ch ⁇ i 41, and ⁇ a ⁇ for ⁇ , equal to 5 nm - black circles 42).
  • Synchronization of the laser diodes 6 through the master radiation will become more efficient with a decrease in the disagreement of the centers of the burdens of the master 2 and 1 operating lasers.
  • the stability of the wavelength of the single output beam of the converted radiation depends on the stability of the length of the wave of the big laser, which is very high.
  • ch ⁇ for e ⁇ e ⁇ ivn ⁇ y ⁇ ab ⁇ y ⁇ edl ⁇ zhenn ⁇ g ⁇ is ⁇ chni ⁇ a radiation ⁇ sn ⁇ ve laze ⁇ ny ⁇ di ⁇ d ⁇ v with ⁇ dn ⁇ chas ⁇ n ⁇ y na ⁇ ach ⁇ y ne ⁇ b ⁇ dim ⁇ vy ⁇ lnenie sleduyuschi ⁇ usl ⁇ vy not b ⁇ lee 15 nm ⁇ lnaya shi ⁇ ina s ⁇ e ⁇ a vy ⁇ dn ⁇ g ⁇ summa ⁇ n ⁇ g ⁇ ⁇ uch ⁇ a radiation s ⁇ v ⁇ u ⁇ n ⁇ s ⁇ i laze ⁇ ny ⁇ di ⁇ d ⁇ v 6 d ⁇ lzhna by ⁇ vyb ⁇ ana (see .Fig.
  • An additional advantageous synchronization of laser lasers 6 through the master radiation is that, in fact, there is no effect of the noise of the master laser 2 on the processed laser emitter 1. From nab ⁇ a s ⁇ e ⁇ v, za ⁇ isanny ⁇ ⁇ i ⁇ azny ⁇ in ⁇ ensivn ⁇ s ⁇ ya ⁇ zadayuscheg ⁇ laze ⁇ a 2 ( ⁇ ig.
  • the laser is synchronized with 6 operating lasers 1 through the master radiation using a master laser, the emitted light is emitted from the laser.
  • P ⁇ i ⁇ edelenn ⁇ y m ⁇ schn ⁇ s ⁇ i radiation zadayuscheg ⁇ laze ⁇ a 2 shi ⁇ ina s ⁇ e ⁇ a edin ⁇ g ⁇ vy ⁇ dn ⁇ g ⁇ ⁇ uch ⁇ a radiation is ⁇ lnyayuscheg ⁇ laze ⁇ a 1 d ⁇ s ⁇ igae ⁇ shi ⁇ iny radiation s ⁇ e ⁇ a zadayuscheg ⁇ laze ⁇ a 2.
  • the master laser 2 reduces the output single beam of the emitting laser 1 and changes the radiation pattern.
  • P ⁇ edl ⁇ zhennye is ⁇ chni ⁇ i radiation is ⁇ lzuyu ⁇ sya sis ⁇ ema ⁇ in communication, being vazhn ⁇ y chas ⁇ yu ⁇ iches ⁇ i ⁇ ⁇ mmuni ⁇ atsi ⁇ nny ⁇ sis ⁇ em for na ⁇ ach ⁇ i ⁇ ve ⁇ d ⁇ elny ⁇ laze ⁇ v, ⁇ i s ⁇ zdiding laze ⁇ n ⁇ g ⁇ ⁇ e ⁇ n ⁇ l ⁇ giches ⁇ g ⁇ ⁇ b ⁇ ud ⁇ vaniya, meditsins ⁇ g ⁇ ⁇ b ⁇ ud ⁇ vaniya, izme ⁇ i ⁇ elny ⁇ us ⁇ ys ⁇ v and ⁇ .d.

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Lasers (AREA)
  • Laser Beam Processing (AREA)
  • Optical Couplings Of Light Guides (AREA)
  • Semiconductor Lasers (AREA)
  • Laser Surgery Devices (AREA)

Abstract

L'invention peut être utilisée dans des réseaux de télécommunications et s'avère représenter une partie importante des systèmes optiques de communication, pour le pompage des lasers à l'état solide, pour le développement d'équipement technologique à base de laser, de l'équipement médical, des instrument de mesure, etc. L'invention se caractérise par un dispositif rayonnant basé sur une multitude de diodes laser dont les rayonnements sont synchronisés sous l'influence d'au moins un rayonnement extérieur à fréquence unique. Selon cette invention, il est possible d'obtenir un rayonnement de sortie à fréquence unique à partir de la multitude de diodes laser en fonction de la largeur totale du spectre du faisceau de sortie unique du rayonnement optique de l'ensemble des diodes. Le rayonnement optique choisi ne doit pas dépasser 15θm à la différence des longueurs d'ondes Δμ, et à condition que les longueurs d'ondes correspondent au centre de gravité du spectre du faisceau de sortie unique et au centre de gravité du spectre du rayonnement à fréquence unique, la différence des longueurs d'ondes ±Δμ choisie ne doit pas dépassée ?15θm.
PCT/RU2001/000026 2000-01-24 2001-01-24 Source de radiation basee sur des diodes laser WO2001054236A2 (fr)

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RU2477553C1 (ru) * 2011-09-09 2013-03-10 Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Ижевский государственный технический университет имени М.Т. Калашникова" Источник импульсного лазерного излучения
EP2865056A1 (fr) * 2012-06-26 2015-04-29 Koninklijke Philips N.V. Module laser pour profils d'intensité en forme de ligne homogène
RU189439U1 (ru) * 2018-10-23 2019-05-22 федеральное государственное бюджетное образовательное учреждение высшего образования "Ижевский государственный технический университет имени М.Т. Калашникова" Источник импульсного лазерного излучения
RU2739253C1 (ru) * 2019-12-19 2020-12-22 федеральное государственное бюджетное образовательное учреждение высшего образования "Ижевский государственный технический университет имени М.Т. Калашникова" Источник импульсного лазерного излучения

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AU2001232502A1 (en) 2001-07-31
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