WO2001082429A1 - Regle de diodes laser - Google Patents

Regle de diodes laser Download PDF

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Publication number
WO2001082429A1
WO2001082429A1 PCT/RU2000/000151 RU0000151W WO0182429A1 WO 2001082429 A1 WO2001082429 A1 WO 2001082429A1 RU 0000151 W RU0000151 W RU 0000151W WO 0182429 A1 WO0182429 A1 WO 0182429A1
Authority
WO
WIPO (PCT)
Prior art keywords
radiation
lens
external
laser diodes
laser
Prior art date
Application number
PCT/RU2000/000151
Other languages
English (en)
Russian (ru)
Inventor
Viktor Viktorovich Apollonov
Sergei Igorevich Derzhavin
Vitaly Vladimirovich Kuzminov
Dmitry Alexandrovich Mashkovsky
Valery Nikolaevich Timoshkin
Vladimir Alexandrovich Filonenko
Alexandr Mikhailovich Prokhorov
Original Assignee
Zakrytoe Aktsionernoe Obschestvo 'energomashtekhnika'
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Zakrytoe Aktsionernoe Obschestvo 'energomashtekhnika' filed Critical Zakrytoe Aktsionernoe Obschestvo 'energomashtekhnika'
Priority to AU2000244414A priority Critical patent/AU2000244414A1/en
Priority to PCT/RU2000/000151 priority patent/WO2001082429A1/fr
Publication of WO2001082429A1 publication Critical patent/WO2001082429A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4062—Edge-emitting structures with an external cavity or using internal filters, e.g. Talbot filters

Definitions

  • the best level of technology The maximum intensity of radiation at the focus of the lens is achieved if the radiation is one of a kind. and the separation of the radiation intensity from the line in the physical area is a part of a single diffractive element.
  • the operation of a single emission unit is only to be reliably increased, so that there is only one more advantageous moderation Indeed, the range of radiation offers high selective properties of the device.
  • the number of features is divided by the wide bending distribution of the intensity of a single emitter, i.e. depends on the operation of the 5 emitter and can be priced as 2 (1/1)
  • the selectivity is ⁇ 1 / ( ⁇ )% and only 1 Consequently ⁇ / Mé ⁇ . ⁇ .e improvement in selective properties is driven by an increase in the number of features and people.
  • the described situation provides the main basic problem when creating a separate set of emitters with the last known warning.
  • a well-known device has at least 3 drawbacks.
  • the use of small-sized, single-source devices in the direction of the opposite direction of laser devices with a small emissive is not very usable.
  • the effect of the Calb ensures the separation of the radiation intensity in the direction of the parallel line, and partly exclude the voltage from the field.
  • the radius of curvature of the cylinder is sharpened in the groove of the transverse pendulum ⁇ - ⁇ in the selection from the condition of the optical radiation in the case of external protection.
  • the purpose of this invention is to create a compact device, which makes it possible to interfere with other tasks.
  • ⁇ r (8/2) / ⁇ . ⁇ 1 ⁇ 0 )
  • 8 is the width of the diode band
  • ⁇ is the radiation wavelength
  • ⁇ _ is the resonance length
  • the emitters kit is located on the side of the lens with a good optical lens with a sharp lens omb on the ground (5).
  • the separation of the radiation intensity in the rear optical area of the lens can be found in the formula described in (Goodman J. Introduction to Fruits, Food, Moscow, 1970).
  • Formula (10) contains an integral factor that depends on ⁇ , and a multiplier that determines the bending intensity distribution.
  • formula (1 1) it follows that the condition for the existence of one (central) feature in the physical area of the lens has the form: or
  • condition (12) can be rewritten as:
  • the original adapter ⁇ ⁇ is located in the front focal area of the lens 1 1 with the focal length ⁇
  • ⁇ 2 ⁇ switch and its value ⁇ ⁇ 2 ⁇ from the general formula (13.14), by setting ⁇ 2 , 0. ⁇ when:
  • the condition (12) for concentrating the entire energy into the central mode after converting into two lenses with allowance for (15, 20) has the form:
  • the source cable of the UT equipped with an external connector, is located in the front focal plane of the lens 11 with the focal length of the lens.
  • Lens 12 with a focal length of ⁇ 2 is located in the rear focal area of the front lens, where the adapter is used, which is used for discharging.
  • the concentration of radiation is recorded in the rear focal plane of the lens 12.
  • FIG. 1 shows the scheme of radiation propagation of the syn- thesome device from the isolated external line of the ruler with the Gaussian output of the emitter, where: 1, 2 -
  • ⁇ a ⁇ ig. 3 ⁇ ivedena s ⁇ ema us ⁇ ys ⁇ va for sele ⁇ tsii sin ⁇ azn ⁇ y su ⁇ e ⁇ m ⁇ dy lineyn ⁇ g ⁇ nab ⁇ a ⁇ lu ⁇ v ⁇ dni ⁇ vy ⁇ laze ⁇ v v ⁇ external ⁇ ez ⁇ na ⁇ e and ⁇ ntsen ⁇ atsii ene ⁇ gii in tsen ⁇ aln ⁇ m ⁇ ich ⁇ e - ( ⁇ i ⁇ ) ( ⁇ shashge ⁇ a ⁇ sa ⁇ gu G ⁇ g ⁇ a ⁇ ega ⁇ g ⁇ s ⁇ e s ⁇ g ⁇ ⁇ G ⁇ azeg Array ⁇ a ⁇ e ⁇ ⁇ sh ⁇ eg: ⁇ a ⁇ e ⁇ ⁇ sh ⁇ eg: 5,027,359, . ⁇ a ⁇ 25...
  • Gaussian distribution of the intensity of the radiation of a single laser diode Gaussian distribution of the intensity of the radiation of a single laser diode.
  • the proposed device operates the following way.
  • the radiation of line 1 (Fig. 4) of laser diodes 2,3,4,5 is consumed due to the diffraction of the output of the output.
  • liney ⁇ y us ⁇ an ⁇ vlena tsilind ⁇ iches ⁇ aya s ⁇ e ⁇ lyannaya mi ⁇ linza 7 ⁇ bes ⁇ echivayuschaya radiation ⁇ llimatsiyu in ⁇ l ⁇ s ⁇ s ⁇ i ⁇ e ⁇ endi ⁇ ulya ⁇ n ⁇ y ⁇ - ⁇ ⁇ e ⁇ e ⁇ du.
  • the distance between the radiating ruler and the cylindrical micro-lens is determined by the condition of the minimum emission tolerance. After the cylindrical lens, the radiation is emitted 9, but it is free of direct contact with the ambient light, and 8 external res. To ensure the development of generations on the front of laser lasers, the external part of the ruler is equipped with an illuminating device 6.
  • Di ⁇ a ⁇ tsi ⁇ nny ⁇ edel radiation sin ⁇ ezi ⁇ vann ⁇ y a ⁇ e ⁇ u ⁇ y ⁇ , s ⁇ s ⁇ avlenn ⁇ y of shi ⁇ a ⁇ e ⁇ u ⁇ ny ⁇ laze ⁇ ny ⁇ di ⁇ d ⁇ v, izluchayuschi ⁇ s ⁇ bs ⁇ venn ⁇ e mn ⁇ g ⁇ m ⁇ d ⁇ v ⁇ e radiation in the opposite direction is achieved through the conversion of lasers from a large number of units with a gaussian allocation ⁇ implemented in the external thirteen
  • the original coupling Ui arranged by an external receptacle, is located in the front focal plane of the lens 1 1 with focal length ⁇ ).
  • Lens 12 with a focal length of ⁇ 2 is located in the rear focal area of the front lens, where the adapter is located, which is used for a second use.
  • the concentration of radiation is recorded in the rear focal plane of the lens 12.
  • ch ⁇ ⁇ zv ⁇ lyae ⁇ is ⁇ lz ⁇ va ⁇ sis ⁇ emy low ⁇ e ⁇ itsie ⁇ m T improving sele ⁇ ivnye sv ⁇ ys ⁇ va ⁇ ez ⁇ na ⁇ a and ⁇ bes ⁇ echivaya v ⁇ zm ⁇ zhn ⁇ s ⁇ e ⁇ e ⁇ ivn ⁇ g ⁇ ⁇ e ⁇ l ⁇ v ⁇ da ⁇ izlucha ⁇ eley, ch ⁇ ⁇ eds ⁇ avlyae ⁇ s ⁇ b ⁇ y ⁇ s ⁇ benn ⁇ a ⁇ ualnuyu ⁇ blemu for m ⁇ schny ⁇ linee ⁇ .
  • This device may be used when syncing two-dimensional laser arrays.
  • a glass cylindrical micro lens with a diameter of 0 350 ⁇ m was located at a distance of “500 ⁇ m emitting fifteen
  • the circuitry which is connected to an external device, is based on a laser-emitting line.
  • the intensity of the side features is divided by the bending division of 3, there is a separate diode, which is shared by the way that is 16
  • Sleds ⁇ viem mal ⁇ g ⁇ ⁇ azme ⁇ a ⁇ e ⁇ e ⁇ yazh ⁇ i yavlyae ⁇ sya ⁇ davlenie in ⁇ ensivn ⁇ s ⁇ i ⁇ ich ⁇ v sin ⁇ azn ⁇ y su ⁇ e ⁇ m ⁇ dy ⁇ yad ⁇ v t ⁇ 1, ⁇ 2 ...
  • the invention may be used in military-optical communication, medicine, industrial processing, and materials.

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

L'invention relève des lasers semi-conducteurs et peut s'utiliser dans la communication par fibres optiques, la médecine et pour le traitement de matériaux. Le but de l'invention est de concentrer en une rayure toute l'énergie de rayonnement, avec une divergence par diffraction d'une puissante règle de diodes laser à ouverture large et à capacité multimodale dans une direction transversale se trouvant dans le plan focal d'une lentille tout en assurant la nature compacte du système de rayonnement.com. Dans cette règle, disposée dans un résonateur extérieur, on utilise des diodes laser à ouverture large et à capacité multimodale. Les paramètres géométriques du milieu actif et du résonateur sont sélectionnés de manière à faire basculer une diode laser entre le mode multimodal et le mode monomodal en direction transversale, à l'intérieur d'un résonateur externe, les nombres de Fresnel ; étant égaux à NF=(S/2)2μL<1, dans laquelle S est la largeur de la bande de la diode laser, μ est la longueur de l'onde de rayonnement, L est la longueur du résonateur. Le résonateur externe assure la sélection d'un mode principal ayant une distribution gaussienne dans le sens transversal pour un dispositif de rayonnement unique à ouverture large ainsi qu'une sélection de supermodes pour une règle en phase.
PCT/RU2000/000151 2000-04-26 2000-04-26 Regle de diodes laser WO2001082429A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
AU2000244414A AU2000244414A1 (en) 2000-04-26 2000-04-26 Laser diode strip
PCT/RU2000/000151 WO2001082429A1 (fr) 2000-04-26 2000-04-26 Regle de diodes laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/RU2000/000151 WO2001082429A1 (fr) 2000-04-26 2000-04-26 Regle de diodes laser

Publications (1)

Publication Number Publication Date
WO2001082429A1 true WO2001082429A1 (fr) 2001-11-01

Family

ID=20129502

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/RU2000/000151 WO2001082429A1 (fr) 2000-04-26 2000-04-26 Regle de diodes laser

Country Status (2)

Country Link
AU (1) AU2000244414A1 (fr)
WO (1) WO2001082429A1 (fr)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5027359A (en) * 1989-10-30 1991-06-25 Massachusetts Institute Of Technology Miniature Talbot cavity for lateral mode control of laser array
US5033054A (en) * 1990-08-17 1991-07-16 Spectra Diode Laboratories, Inc. Phase conjugate laser
RU2105399C1 (ru) * 1996-12-03 1998-02-20 Государственное научно-производственное предприятие "Прибор" Твердотельный лазер с накачкой лазерными диодами

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5027359A (en) * 1989-10-30 1991-06-25 Massachusetts Institute Of Technology Miniature Talbot cavity for lateral mode control of laser array
US5033054A (en) * 1990-08-17 1991-07-16 Spectra Diode Laboratories, Inc. Phase conjugate laser
RU2105399C1 (ru) * 1996-12-03 1998-02-20 Государственное научно-производственное предприятие "Прибор" Твердотельный лазер с накачкой лазерными диодами

Also Published As

Publication number Publication date
AU2000244414A1 (en) 2001-11-07

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