WO2001071820A3 - A semitransparent optical detector with a transparent conductor and method of making - Google Patents

A semitransparent optical detector with a transparent conductor and method of making Download PDF

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Publication number
WO2001071820A3
WO2001071820A3 PCT/US2001/009059 US0109059W WO0171820A3 WO 2001071820 A3 WO2001071820 A3 WO 2001071820A3 US 0109059 W US0109059 W US 0109059W WO 0171820 A3 WO0171820 A3 WO 0171820A3
Authority
WO
WIPO (PCT)
Prior art keywords
materials
various
silicon
tin oxide
photodetector
Prior art date
Application number
PCT/US2001/009059
Other languages
French (fr)
Other versions
WO2001071820A2 (en
Inventor
Eugene Y Ma
Original Assignee
Aegis Semiconductor
Eugene Y Ma
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Aegis Semiconductor, Eugene Y Ma filed Critical Aegis Semiconductor
Priority to AU2001245916A priority Critical patent/AU2001245916A1/en
Publication of WO2001071820A2 publication Critical patent/WO2001071820A2/en
Publication of WO2001071820A3 publication Critical patent/WO2001071820A3/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/1016—Devices sensitive to infrared, visible or ultraviolet radiation comprising transparent or semitransparent devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PIN type

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

Materials suitable for fabricating optical monitors include amorphous, polycrystalline and microcrystalline materials. Semitransparent photodetector materials may be based on silicon or silicon and germanium alloys. Conductors for connecting to and contacting the photodetector may be made from various transparent oxides, including zinc oxide, tin oxide and indium tin oxide. Optical monitor structures based on PIN diodes take advantage of the materials disclosed. Various contact, lineout, substrate and interconnect structures optimize the monitors for integration with various light sources, including vertical cavity surface emitting laser (VCSEL) arrays. Complete integrated structures include a light source, optical monitor and either a package or waveguide into which light is directed.
PCT/US2001/009059 2000-03-22 2001-03-20 A semitransparent optical detector with a transparent conductor and method of making WO2001071820A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU2001245916A AU2001245916A1 (en) 2000-03-22 2001-03-20 A semitransparent optical detector with a transparent conductor and method of making

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US60/192,444 2000-03-22
US19244400P 2000-03-27 2000-03-27

Publications (2)

Publication Number Publication Date
WO2001071820A2 WO2001071820A2 (en) 2001-09-27
WO2001071820A3 true WO2001071820A3 (en) 2002-02-14

Family

ID=22709674

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2001/009059 WO2001071820A2 (en) 2000-03-22 2001-03-20 A semitransparent optical detector with a transparent conductor and method of making

Country Status (2)

Country Link
AU (1) AU2001245916A1 (en)
WO (1) WO2001071820A2 (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101131650B1 (en) 2003-05-02 2012-03-28 피코메트릭스 엘엘씨 Pin photodetector
JP4164685B2 (en) 2004-07-06 2008-10-15 セイコーエプソン株式会社 Optical element and manufacturing method thereof
DE102006012920B3 (en) * 2006-03-21 2008-01-24 Universität Konstanz Method for producing a photovoltaic element with stabilized efficiency
JP2008171871A (en) 2007-01-09 2008-07-24 Hitachi Displays Ltd Highly sensitive photo-sensor element and photo-sensor device using the same
GB2565041B (en) * 2017-06-19 2021-12-29 Liddle Richard Transparent structure with electrically conductive elements
JP7199143B2 (en) * 2017-10-17 2023-01-05 日本ルメンタム株式会社 Semiconductor light receiving device and its manufacturing method
US11810908B2 (en) 2021-05-21 2023-11-07 Meta Platforms Technologies, Llc Wafer-level 3D integration of high voltage optical transformer

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0139487A1 (en) * 1983-09-26 1985-05-02 Exxon Research And Engineering Company A method for sputtering a pin or nip amorphous silicon semi-conductor device having partially crystallised P and N-layers
WO1989003593A1 (en) * 1987-10-15 1989-04-20 Stemcor Corporation Low noise photodetection and photodetector therefor
US4885622A (en) * 1984-03-23 1989-12-05 Oki Electric Industry Co., Ltd. Pin photodiode and method of fabrication of the same
US5162239A (en) * 1990-12-27 1992-11-10 Xerox Corporation Laser crystallized cladding layers for improved amorphous silicon light-emitting diodes and radiation sensors
EP0860885A2 (en) * 1997-02-19 1998-08-26 Canon Kabushiki Kaisha Photovoltaic device, photoelectric transducer and method of manufacturing same

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0139487A1 (en) * 1983-09-26 1985-05-02 Exxon Research And Engineering Company A method for sputtering a pin or nip amorphous silicon semi-conductor device having partially crystallised P and N-layers
US4885622A (en) * 1984-03-23 1989-12-05 Oki Electric Industry Co., Ltd. Pin photodiode and method of fabrication of the same
WO1989003593A1 (en) * 1987-10-15 1989-04-20 Stemcor Corporation Low noise photodetection and photodetector therefor
US5162239A (en) * 1990-12-27 1992-11-10 Xerox Corporation Laser crystallized cladding layers for improved amorphous silicon light-emitting diodes and radiation sensors
EP0860885A2 (en) * 1997-02-19 1998-08-26 Canon Kabushiki Kaisha Photovoltaic device, photoelectric transducer and method of manufacturing same

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
FERNANDES M ET AL: "VIS/NIR detector based on muc-Si:H p-i-n structures", THIN SOLID FILMS, ELSEVIER-SEQUOIA S.A. LAUSANNE, CH, vol. 364, no. 1-2, March 2000 (2000-03-01), pages 204 - 208, XP004195096, ISSN: 0040-6090 *

Also Published As

Publication number Publication date
AU2001245916A1 (en) 2001-10-03
WO2001071820A2 (en) 2001-09-27

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