WO2001069304A1 - Optique laser et laser a diodes - Google Patents

Optique laser et laser a diodes Download PDF

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Publication number
WO2001069304A1
WO2001069304A1 PCT/DE2001/000993 DE0100993W WO0169304A1 WO 2001069304 A1 WO2001069304 A1 WO 2001069304A1 DE 0100993 W DE0100993 W DE 0100993W WO 0169304 A1 WO0169304 A1 WO 0169304A1
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WO
WIPO (PCT)
Prior art keywords
axis
laser
plane
emitter
diode
Prior art date
Application number
PCT/DE2001/000993
Other languages
German (de)
English (en)
Inventor
Volker Krause
Christoph ÜLLMANN
Arnd Kösters
Georg Rehmann
Original Assignee
Laserline Gesellschaft für Entwicklung und Vertrieb von Diodenlasern mbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE2000112480 external-priority patent/DE10012480C2/de
Application filed by Laserline Gesellschaft für Entwicklung und Vertrieb von Diodenlasern mbH filed Critical Laserline Gesellschaft für Entwicklung und Vertrieb von Diodenlasern mbH
Priority to AU2001252103A priority Critical patent/AU2001252103A1/en
Publication of WO2001069304A1 publication Critical patent/WO2001069304A1/fr

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
    • G02B27/0938—Using specific optical elements
    • G02B27/095—Refractive optical elements
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
    • G02B27/0905—Dividing and/or superposing multiple light beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4012—Beam combining, e.g. by the use of fibres, gratings, polarisers, prisms

Definitions

  • the invention relates to laser optics according to the preamble of claim 1 or 3 and to a diode laser with such an optic according to the preamble of claim 20 or 22.
  • the radiation from a semiconductor diode laser (hereinafter also referred to as "diode laser") is characterized by a strongly divergent beam with a divergence> 1000 mrad This is caused by the exit layer, which is limited to a height of ⁇ 1 ⁇ m, at which a large angle of divergence is generated, similar to the diffraction at a slit-shaped opening. Since the extension of the exit opening is different in the plane perpendicular and parallel to the active semiconductor layer, there are different beam divergences in the plane perpendicular and parallel to the active layer.
  • a possible goal of beam shaping is to create a beam with almost identical M values in both planes, i.e. to reach perpendicular and parallel to the active layer.
  • the following methods for shaping the beam geometry are currently known, by means of which the beam qualities can be approximated in the two main planes of the beam.
  • linear beam cross-sections can be combined into a circular bundle by rearranging the fibers.
  • Such methods are e.g. in U.S. Patents 5,127,068, 4,763,975, 4,818,062, 5,268,978 and 5,258,989.
  • a continuous line source for example that of a diode laser which is collimated in the fast axis direction and has a high occupancy density
  • the latter Beam profile (line) is divided and is in a rearranged form behind the optical element.
  • Laser optics with the features of the preamble of claim 1 are also known.
  • the laser beam of a emitter group or a laser bar which has a linear or band-shaped cross section, is fanned out into partial beams which lie in different, parallel planes. These individual or partial beams are then combined in one pushed the second forming element so that this results in a more concentrated beam diameter and thus a higher power density.
  • the object of the invention is to provide laser optics or a diode laser for increased power.
  • the special feature of the invention is that at least two, but preferably more than two emitter planes are provided, each with at least one emitter group having a plurality of emitters or diodes, and that the laser radiation of each emitter group is fanned out by the first shaping element in such a way that for each Emitter group a separate sub-beam group is obtained with sub-beams which are offset from one another in two axes running perpendicular to the radiation direction.
  • the sub-beam groups adjoin one another in a first axis, preferably without a distance or space between these sub-beam groups.
  • all of the partial beams of all groups could then be pushed over one another by shifting in the first axis, which is also the axis in which the emitters of the emitter groups follow one another or correspond to this axis, so that these partial beams form a common deformed laser beam which, for example has a bar-shaped cross section with a width that corresponds to the length that the partial beams have in the first axis and that can be focused into a focus in a focusing optics.
  • surface sides are to be understood in each case as meaning the large plate sides.
  • Near sides are to be understood in the sense of the invention as the sides formed on the edge of the plate between the surface sides.
  • the plate fan can be produced by assembling individual plates or plate-shaped elements or else in one piece, for example as a molded part with corresponding intermediate layers for total reflection.
  • FIG. 1 shows a simplified representation of a diode laser consisting of a laser diode arrangement having a plurality of laser chips or bars and a laser optic for shaping the laser beams, the plane of the drawing of this figure being perpendicular to the active layer of the laser bars;
  • Fig. 2 shows the diode laser of Figure 1, but in a representation in which the
  • Fig. 6 in positions a, b and c each in a simplified representation of the formation of the laser beam at different positions within the laser optics
  • X, Y and Z each have spatial axes running perpendicular to one another, namely the X axis, Y axis and Z axis.
  • the drawing plane of FIG. 1 accordingly lies in the Y-Z plane defined by the Y axis and the Z axis, the drawing plane of FIG. 2 in the X-Z plane and the drawing plane of FIG. 3 in the X-Y plane.
  • the diode laser 1 shown in FIGS. 1-3 essentially consists of a diode laser arrangement 2, which has a plurality of laser components or bars 4 each provided on a substrate 3, which is designed, among other things, as a heat sink.
  • Each laser bar 4 has a multiplicity of laser light-emitting diode elements or emitters which are oriented in the same direction and are offset in the direction of the X-axis in each laser bar 4 and in particular also with their active layers in a common plane perpendicular to the drawing plane of FIG. 1 or parallel to the plane of the drawing in FIG. 2, ie in the representation chosen for the figures in the XZ plane.
  • the laser bars 4 are parallel to one another and spaced apart from one another by a predetermined amount y in the direction of the Y axis. This distance results, among other things, from the design point of view of the thickness of the substrates 3 in this axial direction
  • the diode laser 1 further comprises the laser optics 8 described in more detail below, with which the laser radiation of the individual laser bars 4 is focused in a common focus 5.
  • This laser optics 8 includes Fast-axis collimators 6, each of which is assigned to each laser bar 4 and each of which collimates the laser beam 7 of the associated laser bar 4 in the fast axis, i.e. in the Y axis and thus in the YZ plane perpendicular to the active layer in which the laser beam of the emitter of the relevant laser bar 4 has the greater divergence.
  • the fast-axis collimators 6 are each of a microlens, namely formed by a cylindrical lens which lies with its axis in the X axis. After passing through the fast-axis collator 6, the laser beam 7 of each laser bar is essentially available as a narrow-band beam, the larger dimension of which lies in the x-axis, as indicated in FIG. 3 in position a.
  • the laser optics 8 have an optical arrangement in the beam path of the laser beams 7 for further shaping of the laser beams, in such a way that in a first shaping element, which is provided jointly for the laser beams 7 of all laser bars 4, each laser beam 7 is first separated into partial beams 7 'which are fanned out in different planes parallel to the XZ plane and offset from one another in the X axis, as shown in FIG the position b of Figure 3 is shown.
  • each laser bar 4 each form a partial beam group 9 of fanned out partial beams 7', the number of groups 9 being equal to the number of laser bars 4 or the emitter planes of the laser diode arrangement 2 in which the laser bars 4 are arranged.
  • Each group 9 also has a height y 'in the direction of the Y axis, which corresponds to the distance y.
  • groups 9 close to the one shown Embodiment directly to each other ie the distance between the plane of the last sub-beam 7 'of a group 9 and the plane of the first sub-beam 7' of the next group 9 is equal to or substantially equal to the distance that the planes of the sub-beams 7 'within each group 9 have each other.
  • the dimension x 'that the partial beams 7' in the groups 9 have in the X axis is equal to or approximately the same as the dimension x divided by the number of partial beams 7 'per group 9.
  • each laser beam 7 is fanned out into five partial beams 7 ', so that a total of fifteen partial beams 7' are obtained in a total of three groups.
  • This laser beam 7 "then has its larger dimension y" in the direction of the Y axis, which corresponds to the height y 'multiplied by the number of groups 9.
  • the width of the laser beam 7 " is the same the dimension x 'of the partial beams 7'.
  • the bar-shaped laser beam 7 ′′ is then focused in focus 5 in a focusing arrangement 10.
  • the principle of beam shaping described above has the advantage, among other things, that the laser radiation from a large number of laser bars 4, which are provided in the laser diode arrangement 2 offset with respect to one another in the direction of the Y axis, can be focused in the common focus 5, thus with high beam quality, a high power density can be achieved, the structurally necessary and unavoidable distance y between the individual planes in which the laser bars 4 are arranged being used for the forming.
  • Another advantage is that the laser optics 8 and in particular also their forming elements can be implemented very simply and therefore also inexpensively.
  • the laser optics 8 in the beam path following the fast-axis collimators 6 contain a first plate fan 11, which is made of a large number of thin plates 12 made of a light-conducting material, for example of glass.
  • the plates 12 have a square cut.
  • Each plate 12 has two flat plate sides 13 and 14, which are optically of high quality, ie polished and provided with an anti-reflection layer and of which the narrow side 13 forms the light entrance and the narrow side 14 forms the light exit.
  • the plates 12 adjoin one another in a stack-like manner with their surface sides, which are also polished. Air or a medium is provided between adjacent plates 12, for example, which connects the plates and at the same time ensures total reflection of the laser light within the plates 12 on their surface sides.
  • the individual plates 12 are each rotated from plate to plate in the same direction about the fan axis to one another.
  • the thickness of the plates 12 is, for example, 1 mm.
  • the plates 12 fanned out the laser beams 7 of all the laser bars 4 into the partial beams 7 'or into the individual groups 9, the number of plates 12 determining the number of partial beams 7' in each group 9, ie pointing in the embodiment shown the plate compartments 1 1 a total of five plates 12.
  • the design and arrangement of the plate fan 12 are also such that the central plane of the plate fan 11 parallel to the surface sides of the plates 12 coincides with the YZ center plane of the laser beams 7 and that the plane in which the at least one fan axis lies is is an XZ plane, namely the center or symmetry plane of all laser beams 7 emanating from the laser diode arrangement 2.
  • a further plate fan 15 5 is provided in the beam path on the plate surface 12.
  • This plate fan 15 consists of a plurality of individual plate fans 15', which adjoin one another in the direction of the Y axis, the The number of individual plate compartments 1 5 'is equal to the number of groups 9 and thus to the number of levels in which two laser bars 4 are provided in the laser diode arrangement 4.
  • the plate compartment 1 5 thus has three individual plate compartments 1 5'
  • Single plate compartments 1 5 'in turn consists of a plurality of plates 1 2, which connect to one another in a stack-like manner and are rotated in a fan-like manner against one another, namely about at least one fan axis, ie each individual plate compartments 1 5' essentially has the design as described above for the plate compartments 1 1 has been.
  • the plates 12 of the individual plate compartments 15 are arranged with their surface sides in the X-Z plane, i.e. in a plane which is rotated by 90 ° with respect to the plane of the plates 12 of the plate fan 11 about the Z axis.
  • the number of plates 12 in each individual plate fan 1 5 ' is equal to the number of partial beams 7' in each group 9 and thus equal to the number of plates 12 in plate fan 1 1.
  • the plate fan 1 5 can be produced using the same plates 12 as the plate fan 1 1. With appropriate training, it is also possible to realize the plate compartments 1 5 by stacking several plate compartments 1 1.
  • the number of plates 12 in the plate fan 1 5 is thus equal to the number of plates 12 in the plate fan 1 1 multiplied by the number of levels in which 2 laser bars 4 are provided offset in the Y-axis in the laser diode arrangement.
  • the fan-like arrangement of the plates 12 in the plate fan 11 fuses the laser beams 7 into the partial beams 7 'of each group 9 through the plate fan 1 5, the partial beams 7 'are pushed one above the other in the X-axis and formed into the beam 7 ".
  • the focusing arrangement 10 is formed by a cylindrical lens 16 which follows on the plate fan 15, among other things. collimation of the beam 7 "in the slow axis, i.e. in the X axis, so that there is essentially parallel radiation in the beam path after the cylindrical lens 16, which radiation is then focused with the converging lens 17 in the focus 5.
  • Differences in transit time, in particular also in the partial beams 7 ', can be compensated for by shifting the individual plates 12 of the respective plate fan relative to one another in the optical axis or else by different dimensions of the plates 12 (distance between the end faces 13 and 14).
  • Figures 4 and 5 show a further possible embodiment of a diode laser 1 a, which differs from the diode laser 1 essentially only in that the laser diode arrangement 2a there has a higher number of laser bars 4, namely a total of four laser bars 4, the first Forming element of the laser optics 8a is formed by two plate compartments 1 1 a, of which one plate compartment 1 1 a is assigned to two laser bars 4 or emitter planes (XZ planes).
  • the two plate compartments 1 1 a are of identical design in the laser optics 8 a.
  • the second also has Forming element, ie the plate compartments 1 5a forming this second forming element, a total of four individual plate compartments 1 5 '.
  • the number of plates 12 in plate compartments 1 5a is in turn equal to the number of laser bars 4 or emitter planes multiplied by the number of partial beams 7 'per partial beam group 9, ie multiplied by the number of plates 1 2 of one of the two plate compartments 1 1 a.
  • FIG. 7 and 8 show a further possible embodiment of a diode laser 1 b, which differs from the diode laser 1 essentially only in that the slow-axis collimation does not take place through the cylindrical lens 1 6, which in the beam path after the second plate fan 15 b takes place, but by a microlens Arrey 18, which is arranged in the beam path immediately in front of the first plate fan 1 1 b.
  • the laser optics generally designated 8b in FIGS. 7 and 8 thus have the following elements which - starting from the laser diode arrangement 2b corresponding to the laser diode arrangement 2a - connect to one another in the following order:
  • Plate compartments 1 1 b which corresponds to the plate compartments 1 1 in terms of design and arrangement;
  • the microlens array 18 consists of a multiplicity of optical elements or cylindrical lenses 19 acting as cylindrical lenses, which have their axis in the Y axis, i.e. are oriented perpendicular to the active layer of the emitters of the laser bars 4.
  • the cylindrical lenses 19 are arranged in such a way that a plurality of cylindrical lenses 19 adjoin each other in a row in the direction of the X axis and are preferably combined to form a lens element. Such a row is assigned to each laser bar 4 or each emitter level.
  • the number of cylindrical lenses 19 in each row extending in the direction of the X axis is equal to the number of plates in the plate fan 11b.
  • the number of plates in the plate fan 1 5b is in turn equal to the product of the number of plates in the plate fan 1 1 b and the number of levels of the laser bars 4 or the emitter planes of the laser diode arrangement 2a.
  • the number of plates in the plate fan 15b is twenty with a total of four emitter levels and five plates in the plate fan 11b.
  • FIGS. 9 and 10 show, as a further possible embodiment, a diode laser 1 c, which in turn has the laser diode arrangement 2 c corresponding to the laser diode arrangement 2 a with four laser bars 4 arranged in different planes, and the laser optics 8 c, which follow the fast axis in the beam path following the laser diode arrangement 2 c -Collimators 6, which have microlens Arrey 18 with the rows of cylindrical lenses 19, the two plate compartments 1 1 a corresponding plate compartments 1 1 c and the plate compartments 1 5a corresponding plate compartments 1 5c, ie the laser optics 8c corresponds to the laser optics 8a, but with the difference that instead of the cylinder lens 16 serving as a slow-axis collimator, the slow-axis collimation takes place in front of the first plate fan 11c through the lens array 18.
  • Figures 1 1 and 12 show a diode laser 1 d, which differs from the diode laser 1 c essentially only in that the lens array 18 is arranged for slow-axis collimation in the beam path in front of the fast-axis collimators 6.
  • the plate compartments 1 1 d and 1 5d in turn correspond to the plate compartments 1 1 c and 1 5c.
  • Figures 1 3 and 14 show as a further possible embodiment a diode laser le, which differs from the diode laser 1 c of Figures 9 and 10 essentially in that a lens 20 is provided in the beam path after the plate fan 1 5e, which in slow Axis, ie in the representation of FIGS. 13 and 14 in the X-axis, causes the beam to widen.
  • the lens 20, which is designed as a concave cylindrical lens and lies with its axis of curvature in the Y axis, is followed by a cylindrical lens 1 6e corresponding to the cylindrical lens 1 6e, which is designed as a convexly curved lens.
  • the cylindrical lens 16e acts as a slow axis collimator in such a way that the expanded beam diverging in the slow axis (X axis) is converted into a parallel beam with a beam width equal to or is approximately equal to the width of the beam in the fast axis (Y axis), so that an improved focus 5 is then achieved with the converging lens 17.
  • the plate compartments designated 1 1 e and 15 e in FIGS. 1 3 and 14 correspond to the plate compartments 1 1 c and 15 c and are designed in the same manner as was described for the plate compartments 1 1 c and 15 c.
  • the diode laser 1e further comprises the diode laser arrangement 2e corresponding to the diode laser arrangement 2.
  • the two plate compartments 1 1 e and 15e are components of the laser optics 8e, namely together with the fast-axis collimators and the slow-axis collimators as well as the lenses 16e, 1 7 and 20.
  • the diode laser 1 e Different variants of the diode laser 1 e are conceivable.
  • a microlens array for slow-axis collimation instead of a plurality of cylindrical lenses 19, each arranged in rows, in which continuous, that is, for all emitter planes or for a part or a group of such emitter planes extending in the direction of the Y axis Cylinder lens elements are provided, but the configuration described in connection with FIGS. 7-12 has the advantage of individual adjustability of the cylinder lenses or cylinder lens arrangements.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Semiconductor Lasers (AREA)

Abstract

L'invention concerne une optique laser d'un nouveau type ainsi qu'un laser à diodes d'un nouveau type pourvu d'une telle optique. Au moins deux, de préférence plus de deux plans émetteurs sont respectivement dotés d'au moins un groupe d'émetteurs présentant plusieurs émetteurs ou diodes et le rayonnement laser de chaque groupe d'émetteurs est ouvert en éventail par un premier élément transformateur de telle façon que l'on obtienne pour chaque groupe d'émetteurs un groupe de rayons partiels propres comportant des rayons partiels. Un deuxième élément transformateur permet de superposer l'ensemble des rayons partiels de tous les groupes de telle façon que ces rayons partiels forment un faisceau laser transformé commun. On utilise comme éléments transformateurs de préférence des dispositifs en éventail plats.
PCT/DE2001/000993 2000-03-15 2001-03-14 Optique laser et laser a diodes WO2001069304A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU2001252103A AU2001252103A1 (en) 2000-03-15 2001-03-14 Laser optics and a diode laser

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10012480.1 2000-03-15
DE2000112480 DE10012480C2 (de) 1999-04-23 2000-03-15 Laseroptik sowie Diodenlaser

Publications (1)

Publication Number Publication Date
WO2001069304A1 true WO2001069304A1 (fr) 2001-09-20

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2001/000993 WO2001069304A1 (fr) 2000-03-15 2001-03-14 Optique laser et laser a diodes

Country Status (3)

Country Link
AU (1) AU2001252103A1 (fr)
DE (1) DE19918444C2 (fr)
WO (1) WO2001069304A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8520311B2 (en) 2009-02-13 2013-08-27 Laserline Gesellschaft Fur Entwicklung Und Vertrieb Von Diodenlasern Mbh Laser optics and diode laser

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DE19918444C2 (de) * 2000-03-15 2001-06-21 Laserline Ges Fuer Entwicklung Laseroptik sowie Diodenlaser
DE10327735A1 (de) * 2003-06-18 2005-01-05 Hentze-Lissotschenko Patentverwaltungs Gmbh & Co.Kg Abbildungsvorrichtung für die Abbildung des Lichtes einer Halbleiterlasereinheit mit einer Mehrzahl von Emittern in einer Arbeitsebene sowie Beleuchtungsvorrichtung mit einer derartigen Abbildungsvorrichtung
DE10331442B4 (de) * 2003-07-10 2008-03-06 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Anordnung zur Transformation eines optischen Strahlungsfelds
EP1601072B1 (fr) 2004-05-29 2007-05-30 TRUMPF Laser GmbH + Co. KG Système et module de mise en forme des faisceaux optiques pour montage des lasers à diodes
DE102004040107A1 (de) * 2004-08-18 2006-02-23 Arctos Showlasertechnik E.Kfm. Laservorrichtung zur Erzeugung eines roten Laserstrahls
CN101221288B (zh) * 2008-01-11 2010-11-03 嘉兴大合激光设备有限公司 半导体激光阵列快慢轴光束参数乘积匀称化装置
DE102011016253B4 (de) * 2011-04-06 2014-02-27 Laserline Gesellschaft für Entwicklung und Vertrieb von Diodenlasern mbH Diodenlaser
DE102019210041B4 (de) * 2019-07-08 2021-02-18 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Optische Vorrichtung für eine mehrkanalige optomechanische Adressiereinheit
DE102020118421B4 (de) 2020-07-13 2023-08-03 Focuslight Technologies Inc. Laservorrichtung

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DE19514626A1 (de) * 1995-04-26 1996-10-31 Fraunhofer Ges Forschung Anordnung und Verfahren zur Formung und Führung eines Strahlungsfelds eines oder mehrerer Festkörper- und/oder Halbleiterlaser(s)
DE19705574A1 (de) * 1997-02-01 1998-08-06 Laserline Ges Fuer Entwicklung Laseroptik sowie Diodenlaser
US5900981A (en) * 1997-04-15 1999-05-04 Scitex Corporation Ltd. Optical system for illuminating a spatial light modulator
DE19918444A1 (de) * 2000-03-15 2001-02-22 Laserline Ges Fuer Entwicklung Laseroptik sowie Diodenlaser

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JP3098200B2 (ja) * 1996-12-27 2000-10-16 昭和オプトロニクス株式会社 レーザビームの補正方法及び装置
US5986794A (en) * 1997-02-01 1999-11-16 Laserline Gesellschaft Fur Entwicklung Und Vertrieb Von Diodenlasern Mbh Laser optics and diode laser

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DE19514626A1 (de) * 1995-04-26 1996-10-31 Fraunhofer Ges Forschung Anordnung und Verfahren zur Formung und Führung eines Strahlungsfelds eines oder mehrerer Festkörper- und/oder Halbleiterlaser(s)
DE19705574A1 (de) * 1997-02-01 1998-08-06 Laserline Ges Fuer Entwicklung Laseroptik sowie Diodenlaser
US5900981A (en) * 1997-04-15 1999-05-04 Scitex Corporation Ltd. Optical system for illuminating a spatial light modulator
DE19918444A1 (de) * 2000-03-15 2001-02-22 Laserline Ges Fuer Entwicklung Laseroptik sowie Diodenlaser

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8520311B2 (en) 2009-02-13 2013-08-27 Laserline Gesellschaft Fur Entwicklung Und Vertrieb Von Diodenlasern Mbh Laser optics and diode laser

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DE19918444A1 (de) 2001-02-22
DE19918444C2 (de) 2001-06-21
AU2001252103A1 (en) 2001-09-24

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