WO2001069228A3 - Mis hydrogen sensors - Google Patents

Mis hydrogen sensors Download PDF

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Publication number
WO2001069228A3
WO2001069228A3 PCT/US2001/008313 US0108313W WO0169228A3 WO 2001069228 A3 WO2001069228 A3 WO 2001069228A3 US 0108313 W US0108313 W US 0108313W WO 0169228 A3 WO0169228 A3 WO 0169228A3
Authority
WO
WIPO (PCT)
Prior art keywords
ain
sic
mis
electrical behavior
hydrogen
Prior art date
Application number
PCT/US2001/008313
Other languages
French (fr)
Other versions
WO2001069228A2 (en
Inventor
Flaminia Serina
Gregory W Auner
Ka Yuen Simon Ng
Ratna Naik
Original Assignee
Univ Wayne State
Flaminia Serina
Gregory W Auner
Ka Yuen Simon Ng
Ratna Naik
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Wayne State, Flaminia Serina, Gregory W Auner, Ka Yuen Simon Ng, Ratna Naik filed Critical Univ Wayne State
Priority to JP2001568060A priority Critical patent/JP2004508535A/en
Priority to AU2001262922A priority patent/AU2001262922A1/en
Priority to CA002402776A priority patent/CA2402776A1/en
Priority to EP01937158A priority patent/EP1269177A2/en
Priority to US10/472,988 priority patent/US6935158B2/en
Publication of WO2001069228A2 publication Critical patent/WO2001069228A2/en
Publication of WO2001069228A3 publication Critical patent/WO2001069228A3/en

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N33/00—Investigating or analysing materials by specific methods not covered by groups G01N1/00 - G01N31/00
    • G01N33/0004—Gaseous mixtures, e.g. polluted air
    • G01N33/0009—General constructional details of gas analysers, e.g. portable test equipment
    • G01N33/0027—General constructional details of gas analysers, e.g. portable test equipment concerning the detector
    • G01N33/0036—General constructional details of gas analysers, e.g. portable test equipment concerning the detector specially adapted to detect a particular component
    • G01N33/005—H2

Landscapes

  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Food Science & Technology (AREA)
  • Medicinal Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Combustion & Propulsion (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)

Abstract

Hydrogen gas sensors employ an epitaxial layer of the thermodynamically stable form of aluminum nitride (AIN) as the 'insulator' in an MIS structure having a thin metal gate electrode suitable for catalytic dissociate of hydrogen, such as palladium, on a semiconductor substrate. The AIN is deposited by a low temperature technique known as Plasma Source Molecular Beam Epitaxy (PSMBE). When silicon (Si) is used the semiconducting substrate, the electrical behavior of the device is that of a normal nonlinear MIS capacitor. When a silicon carbide (SiC) is used, the electrical behavior of the device is that of a rectifying diode. Preferred structures are Pd/AIN/Si and Pd/AIN/SiC wherein the SiC is preferably 6H-SiC.
PCT/US2001/008313 2000-03-17 2001-03-16 Mis hydrogen sensors WO2001069228A2 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2001568060A JP2004508535A (en) 2000-03-17 2001-03-16 MIS hydrogen sensor
AU2001262922A AU2001262922A1 (en) 2000-03-17 2001-03-16 Mis hydrogen sensors
CA002402776A CA2402776A1 (en) 2000-03-17 2001-03-16 Mis hydrogen sensors
EP01937158A EP1269177A2 (en) 2000-03-17 2001-03-16 Mis hydrogen sensors
US10/472,988 US6935158B2 (en) 2000-03-17 2001-03-16 MIS hydrogen sensors

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US19036900P 2000-03-17 2000-03-17
US60/190,369 2000-03-17
US19884300P 2000-04-21 2000-04-21
US60/198,843 2000-04-21

Publications (2)

Publication Number Publication Date
WO2001069228A2 WO2001069228A2 (en) 2001-09-20
WO2001069228A3 true WO2001069228A3 (en) 2002-08-29

Family

ID=26886042

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2001/008313 WO2001069228A2 (en) 2000-03-17 2001-03-16 Mis hydrogen sensors

Country Status (6)

Country Link
US (1) US6935158B2 (en)
EP (1) EP1269177A2 (en)
JP (1) JP2004508535A (en)
AU (1) AU2001262922A1 (en)
CA (1) CA2402776A1 (en)
WO (1) WO2001069228A2 (en)

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DE10110471C2 (en) 2001-03-05 2003-12-18 Siemens Ag Alcohol sensor based on the principle of work function measurement
US7287412B2 (en) * 2003-06-03 2007-10-30 Nano-Proprietary, Inc. Method and apparatus for sensing hydrogen gas
US20070125153A1 (en) * 2005-10-21 2007-06-07 Thomas Visel Palladium-Nickel Hydrogen Sensor
US20070240491A1 (en) * 2003-06-03 2007-10-18 Nano-Proprietary, Inc. Hydrogen Sensor
GB0323802D0 (en) * 2003-10-10 2003-11-12 Univ Cambridge Tech Detection of molecular interactions using a metal-insulator-semiconductor diode structure
DE102004011554A1 (en) 2004-03-08 2005-09-29 Micronas Gmbh A fuel cell assembly
DE102004019638A1 (en) * 2004-04-22 2005-11-17 Siemens Ag FET-based sensor for the detection of particularly reducing gases, manufacturing and operating methods
DE102004019640A1 (en) 2004-04-22 2005-11-17 Siemens Ag Method for increasing the selectivity of FET-based gas sensors
DE102004019604A1 (en) 2004-04-22 2005-11-17 Siemens Ag Method for minimizing cross sensitivities in FET based gas sensors
DE102004019641B4 (en) * 2004-04-22 2009-10-01 Micronas Gmbh FET-based gas sensor
EP1707952A1 (en) * 2005-03-31 2006-10-04 Micronas GmbH Gas sensitive field effect transistor comprising air gap and manufacturing thereof
EP1707951A1 (en) * 2005-03-31 2006-10-04 Micronas GmbH Gas-sensitive field effect transistor for detecting hydrogen sulphide
US7772617B2 (en) * 2005-03-31 2010-08-10 Micronas Gmbh Gas sensitive field-effect-transistor
TW200712486A (en) * 2005-08-03 2007-04-01 Nano Proprietary Inc Continuous range hydrogen sensor
DE602006000295T2 (en) 2005-09-21 2008-11-06 Adixen Sensistor Ab Hydrogen gas sensitive semiconductor sensor
US7389675B1 (en) 2006-05-12 2008-06-24 The United States Of America As Represented By The National Aeronautics And Space Administration Miniaturized metal (metal alloy)/ PdOx/SiC hydrogen and hydrocarbon gas sensors
JP5358061B2 (en) * 2007-02-28 2013-12-04 インフィコン エービー Improved hydrogen gas sensing semiconductor sensor
JP2009042213A (en) * 2007-07-17 2009-02-26 National Institute For Materials Science Gas sensor element
US7626538B2 (en) * 2007-10-24 2009-12-01 Northrop Grumman Systems Corporation Augmented passive tracking of moving emitter
EP2058649B1 (en) 2007-11-06 2011-06-29 Micronas GmbH Sensor fuel cell
JP2011033615A (en) * 2009-07-09 2011-02-17 National Institute For Materials Science Hydrogen gas detection sensor device and hydrogen gas detection method
US8651737B2 (en) * 2010-06-23 2014-02-18 Honeywell International Inc. Sensor temperature sensing device
EP2426483A1 (en) 2010-09-02 2012-03-07 University of Southhampton Hydrogen Sensors
KR101442888B1 (en) * 2011-03-24 2014-09-25 울산대학교 산학협력단 Gas sensor and method for manufacturing the same
WO2013089606A1 (en) * 2011-12-16 2013-06-20 Saab Ab Object-focussed decision support
CN103094316B (en) * 2013-01-25 2016-01-20 浙江大学 A kind of n/n with high metal gettering ability +silicon epitaxial wafer and preparation method thereof
EP3121589B1 (en) 2015-07-22 2018-03-07 Institute of Solid State Physics, University of Latvia Oxygen gas sensor
JP6865234B2 (en) * 2016-12-28 2021-04-28 ヌヴォトンテクノロジージャパン株式会社 Gas detectors, gas sensor systems, fuel cell vehicles, and hydrogen detection methods
US11541737B2 (en) * 2016-12-28 2023-01-03 Nuvoton Technology Corporation Japan Gas detection device, gas detection system, fuel cell vehicle, and gas detection method
JP6886304B2 (en) * 2017-01-31 2021-06-16 ヌヴォトンテクノロジージャパン株式会社 Gas sensor
CN108110046A (en) * 2017-12-20 2018-06-01 中国工程物理研究院电子工程研究所 Inhibit vertical pulling silicon substrate of displacement irradiation damage and preparation method thereof based on oxygen precipitation
CN112345615A (en) * 2020-11-03 2021-02-09 大连理工大学 Hydrogen sensor of gallium nitride-based high electron mobility transistor
CN113109402B (en) * 2021-03-17 2024-03-19 深圳大学 Capacitive hydrogen sensor core, preparation method thereof and capacitive hydrogen sensor
CN113725006A (en) * 2021-07-12 2021-11-30 华南师范大学 High-voltage-resistance low-leakage silicon-based AlN capacitor and preparation method thereof

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5417821A (en) * 1993-11-02 1995-05-23 Electric Power Research Institute Detection of fluids with metal-insulator-semiconductor sensors
WO1996009534A1 (en) * 1994-09-23 1996-03-28 Forskarpatent I Linköping Ab Method and device for gas sensing
US5698771A (en) * 1995-03-30 1997-12-16 The United States Of America As Represented By The United States National Aeronautics And Space Administration Varying potential silicon carbide gas sensor
US6027954A (en) * 1998-05-29 2000-02-22 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Gas sensing diode and method of manufacturing
EP1052501A1 (en) * 1999-05-11 2000-11-15 Ford Global Technologies, Inc. A combustible gas diode sensor

Family Cites Families (1)

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US5591321A (en) * 1993-11-02 1997-01-07 Electric Power Research Institute Detection of fluids with metal-insulator-semiconductor sensors

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5417821A (en) * 1993-11-02 1995-05-23 Electric Power Research Institute Detection of fluids with metal-insulator-semiconductor sensors
WO1996009534A1 (en) * 1994-09-23 1996-03-28 Forskarpatent I Linköping Ab Method and device for gas sensing
US5698771A (en) * 1995-03-30 1997-12-16 The United States Of America As Represented By The United States National Aeronautics And Space Administration Varying potential silicon carbide gas sensor
US6027954A (en) * 1998-05-29 2000-02-22 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Gas sensing diode and method of manufacturing
EP1052501A1 (en) * 1999-05-11 2000-11-15 Ford Global Technologies, Inc. A combustible gas diode sensor

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
FERRO G ET AL: "Growth mode of AlN epitaxial layers on 6H-SiC by plasma assisted molecular beam epitaxy", JOURNAL OF CRYSTAL GROWTH, NORTH-HOLLAND PUBLISHING CO. AMSTERDAM, NL, vol. 209, no. 2-3, February 2000 (2000-02-01), pages 415 - 418, XP004186716, ISSN: 0022-0248 *
KUO P K ET AL: "Microstructure and thermal conductivity of epitaxial AlN thin films", THIN SOLID FILMS, ELSEVIER-SEQUOIA S.A. LAUSANNE, CH, vol. 253, no. 1/2, 15 December 1994 (1994-12-15), pages 223 - 227, XP004012560, ISSN: 0040-6090 *

Also Published As

Publication number Publication date
EP1269177A2 (en) 2003-01-02
JP2004508535A (en) 2004-03-18
US6935158B2 (en) 2005-08-30
CA2402776A1 (en) 2001-09-20
WO2001069228A2 (en) 2001-09-20
AU2001262922A1 (en) 2001-09-24
US20050074970A1 (en) 2005-04-07

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