WO2001067484A1 - Magnetron sputter ion plating system - Google Patents

Magnetron sputter ion plating system Download PDF

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Publication number
WO2001067484A1
WO2001067484A1 PCT/GB2001/000986 GB0100986W WO0167484A1 WO 2001067484 A1 WO2001067484 A1 WO 2001067484A1 GB 0100986 W GB0100986 W GB 0100986W WO 0167484 A1 WO0167484 A1 WO 0167484A1
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WO
WIPO (PCT)
Prior art keywords
magnetrons
magnetron
inductive coil
closed
coil
Prior art date
Application number
PCT/GB2001/000986
Other languages
French (fr)
Inventor
Stephen Morley
Original Assignee
University Of Ulster
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by University Of Ulster filed Critical University Of Ulster
Priority to AU2001237583A priority Critical patent/AU2001237583A1/en
Publication of WO2001067484A1 publication Critical patent/WO2001067484A1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/354—Introduction of auxiliary energy into the plasma
    • C23C14/358—Inductive energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering

Definitions

  • Magnetic. Sputter Ion Plating System Magnetic. Sputter Ion Plating System
  • the present invention relates to magnetron sputter deposition systems as used, for example, in forming thin films in applications such as hard wearing coatings on engineered components and tools, semiconductor metallization, coatings for medical devices and decorative coatings. More particularly, the invention relates to a hybrid closed field unbalanced magnetron sputter ion plating and inductively coupled plasma coating system.
  • US-A-5556519 discloses a magnetron sputter ion plating system in which two or more magnetrons are spaced around a centrally located substrate.
  • the magnetrons are arranged so that adjacent magnetrons have outer magnetic assemblies of opposite polarity whereby magnetic field lines link adjacent magnetrons, producing a substantially closed ring of magnetic flux.
  • This arrangement substantially traps electrons generated in the system and increases the level of ionisation surrounding the substrate, thus increasing the ion bombardment of the substrates .
  • closed field magnetron system and “closed field unbalanced magnetron sputter ion plating system” mean systems of the general type disclosed in US-A-5556519, including variations thereon and including embodiments as described therein in which the magnetron field is not completely closed, but is substantially closed.
  • the disclosure of US-A-5556519 is incorporated herein by reference.
  • the closed field magnetron system assists in confining electrons in the system, enhancing the ionisation of the sputter gas and thereby providing a higher sputter rate at the target and a higher deposition rate at the substrate to be coated.
  • the sputtered species have a low percentage of ionisation and the majority of them reach the substrate as neutral or uncharged species.
  • the present invention improves upon existing closed field magnetron systems by employing an inductive antenna coupled to the closed field system.
  • the inductive antenna provides an extra source of electrons into the system, which can be used to increase the percentage of ionised sputtered species. This in turn increases the ion bombardment of the substrate even further than with the closed field system alone.
  • An additional advantage is that by applying a potential to the substrate to be coated, the energy and flux of the sputtered species depositing onto the substrate can be controlled.
  • US-A-5556519 refers to a negative bias voltage being applied to the substrate, the bias voltage being a DC voltage or RF power being applied to the substrate in order to produce an induced negative voltage.
  • a pulsed DC or AC voltage may be applied to the substrate.
  • a magnetron sputter ion plating system of the type in which two or more magnetrons are arranged to provide a closed (including a substantially closed) magnetic field, in combination with an inductive coil arranged to provide an inductively coupled plasma source.
  • the inductive coil is arranged so as to limit interference between magnetic fields generated by the coil and magnetic fields generated by the magnetrons, thereby limiting reduction in the electron confinement efficiency of the closed field magnetron system.
  • the inductive coil is located outwith the volume enclosed by the magnetrons, most preferably on a central axis thereof.
  • the inductive coil is located outwith a main housing enclosing the magnetrons, adjacent a dielectric element incorporated into said housing.
  • a power supply applying a time-varying voltage to said inductive coil is adapted to apply a pulsed voltage to said coil so as to limit interference between magnetic fields generated by the coil and magnetic fields generated by the magnetrons, thereby limiting reduction in the electron confinement efficiency of the closed field magnetron system.
  • Fig. 1 is a schematic diagram illustrating a cross sectional side view of one embodiment of a magnetron sputter ion plating system in accordance with the present invention.
  • Fig. 2 is a schematic diagram illustrating a plan view of the system of Fig. 1.
  • a magnetron sputter ion plating system embodying the invention comprises a magnetron housing 3 enclosing an array of magnetrons 4 arranged to form a closed magnetic field (this term including a substantially closed magnetic field) 'in the manner of US-A-5556519 and a substrate (or substrate holder) 5 located within the closed field generated by the magnetrons 4.
  • the position of the substrate 5 is not limited to that shown in the drawings .
  • the substrate 5 may be moved up or down or radially relative to the magnetrons 4 and may be wider or narrower than shown.
  • the shape of the substrate 5 may also vary; it may be planar or cylindrical or adopt any other shape in one, two or three dimensions .
  • the closed field system increases the ionisation of the species inside the magnetron system by reducing the loss of electrons (e.g. to the walls and other earthed surfaces) .
  • the performance of the closed field magnetron system is enhanced by the addition of an inductive antenna 1.
  • the antenna 1 can take various forms; e.g. single or multi-turn coil, spiral, helical, cylindrical or planar. It may be located inside or outside of the magnetron system housing 3.
  • a dielectric element such as dielectric plate 2 may be employed to couple the power from the antenna into the magnetron housing space.
  • the dielectric element 2 may be of any suitable dielectric material, such as quartz.
  • a conductive plate (not shown) may also be employed in order to reduce capacitive coupling between the antenna 1 and the plasma inside the magnetron housing 3.
  • the antenna 1 serves as an electron source to increase the number of electrons in the system by applying a time varying voltage to the antenna 1.
  • the time varying voltage will generally have a frequency in the radio frequency (RF) range and may be applied continuously or may be pulsed.
  • a typical frequency for the voltage is of the order of 2 MHz.
  • Frequencies in the range 0.5 MHz to 30 MHz will provide similar effects to those obtained with 2 MHz. Useful results may also be obtained with frequencies as low as 10 kHz and as high as 3 GHz or more.
  • a matching network may be employed between the voltage source (not shown) and the antenna 1 in order to optimise the power transfer to the antenna/plasma.
  • references to AC or alternating current includes alternating current in the RF frequency range and in the above mentioned range of 10 kHz to 3 GHz or more.
  • the preferred embodiments of the present invention include arrangements which avoid or at least limit interference between the magnetic fields of the magnetron system and those generated by the inductive antenna. In the illustrated example, this is achieved by locating the antenna 1 in such a manner that the magnetic fields generated by the antenna do not interact with the magnetic fields of the closed field magnetron system or do so to only a slight extent.
  • the antenna 1 (shown here as a single turn planar coil) is located above the plane of the magnetrons 4 (i.e. outwith the volume occupied by the magnetrons) and substantially away from the magnetrons 4, towards the central axis of the magnetron housing 3, where the magnetic field produced by the closed field magnetron system is weakest. This limits any interference between the respective fields of the antenna and the magnetron system to an extent such that the electron confinement provided by the closed field magnetron arrangement is not adversely affected or is affected only to a minimal extent.
  • An alternative or supplementary method is to pulse the power applied to the antenna 1. This generates temporary induced magnetic fields from the antenna 1, which arise and then disappear according to the pulse rate of the applied power. These temporary induced magnetic fields interact only weakly with the "permanent" magnetic fields from the closed field magnetron system, again avoiding destruction of the overall closed magnetron field arrangement, or at worst causing only temporary loss of electron confinement during which relatively few electrons are lost from the system.
  • This method may be employed with any of a variety of antenna designs and locations with respect to the magnetron housing. However, it is preferred to combine the use of a pulsed antenna power supply with an antenna arrangement which itself minimises interference between the antenna and magnetron fields.
  • the closed field magnetron system may employ any or all of the variations disclosed in US-A-5556519, and may incorporate further variations and improvements thereon.
  • the system may employ two or more magnetrons; the overall system geometry may be circular in plan or may be of any other suitable shape.
  • the ionising gas may be argon or any other suitable gas or mixture of gases, either inert or reactive, and may contain atoms or particles of species intended to form part of the coating applied by the system.
  • the material to be sputtered from the magnetrons may be conducting, semi-conducting or insulating. For conducting materials, the power supply to the magnetrons may be from a constant or pulsed DC or AC source.
  • the power supply to the magnetrons is preferably from a pulsed DC source or from an AC source in order to provide more efficient sputtering from the magnetron targets.
  • the pulsed signal may be symmetric or asymmetric, and the pulsed signal may be bipolar or unipolar.
  • the system may also include a pumping port to control the pressure of the ionising gas (es) in the system.

Abstract

A magnetron sputter ion plating system of the type in which two or more magnetrons (4) are arranged to provide a closed (or substantially closed) magnetic field, in combination with an inductive coil (1) arranged to provide an inductively coupled plasma source. The inductive coil is arranged so as to limit interference between magnetic fields generated by the coil and magnetic fields genrated by the magnetrons, thereby limiting reduction in the electron confinement efficiency of the closed field magnetron system. The inductive antenna provides an extra source of electrons into the system, which can be used to increase the percentage of ionised sputtered species.

Description

"Magnetron. Sputter Ion Plating System"
The present invention relates to magnetron sputter deposition systems as used, for example, in forming thin films in applications such as hard wearing coatings on engineered components and tools, semiconductor metallization, coatings for medical devices and decorative coatings. More particularly, the invention relates to a hybrid closed field unbalanced magnetron sputter ion plating and inductively coupled plasma coating system.
US-A-5556519 (Teer) discloses a magnetron sputter ion plating system in which two or more magnetrons are spaced around a centrally located substrate. The magnetrons are arranged so that adjacent magnetrons have outer magnetic assemblies of opposite polarity whereby magnetic field lines link adjacent magnetrons, producing a substantially closed ring of magnetic flux. This arrangement substantially traps electrons generated in the system and increases the level of ionisation surrounding the substrate, thus increasing the ion bombardment of the substrates . As used herein, the terms "closed field magnetron system" and "closed field unbalanced magnetron sputter ion plating system" mean systems of the general type disclosed in US-A-5556519, including variations thereon and including embodiments as described therein in which the magnetron field is not completely closed, but is substantially closed. The disclosure of US-A-5556519 is incorporated herein by reference.
Use of the closed field magnetron system assists in confining electrons in the system, enhancing the ionisation of the sputter gas and thereby providing a higher sputter rate at the target and a higher deposition rate at the substrate to be coated. However, the sputtered species have a low percentage of ionisation and the majority of them reach the substrate as neutral or uncharged species.
The present invention improves upon existing closed field magnetron systems by employing an inductive antenna coupled to the closed field system. The inductive antenna provides an extra source of electrons into the system, which can be used to increase the percentage of ionised sputtered species. This in turn increases the ion bombardment of the substrate even further than with the closed field system alone. An additional advantage is that by applying a potential to the substrate to be coated, the energy and flux of the sputtered species depositing onto the substrate can be controlled. US-A-5556519 refers to a negative bias voltage being applied to the substrate, the bias voltage being a DC voltage or RF power being applied to the substrate in order to produce an induced negative voltage. Alternatively, and in some cases advantageously, a pulsed DC or AC voltage may be applied to the substrate.
In accordance with the present invention, there is provided a magnetron sputter ion plating system of the type in which two or more magnetrons are arranged to provide a closed (including a substantially closed) magnetic field, in combination with an inductive coil arranged to provide an inductively coupled plasma source.
Preferably, the inductive coil is arranged so as to limit interference between magnetic fields generated by the coil and magnetic fields generated by the magnetrons, thereby limiting reduction in the electron confinement efficiency of the closed field magnetron system.
Preferably also, the inductive coil is located outwith the volume enclosed by the magnetrons, most preferably on a central axis thereof.
Preferably also, the inductive coil is located outwith a main housing enclosing the magnetrons, adjacent a dielectric element incorporated into said housing. Alternatively or additionally, a power supply applying a time-varying voltage to said inductive coil is adapted to apply a pulsed voltage to said coil so as to limit interference between magnetic fields generated by the coil and magnetic fields generated by the magnetrons, thereby limiting reduction in the electron confinement efficiency of the closed field magnetron system.
Other features and aspects of the invention will be apparent from the following description.
Embodiments of the invention will now be described, by way of example only, with reference to the accompanying drawings, in which:
Fig. 1 is a schematic diagram illustrating a cross sectional side view of one embodiment of a magnetron sputter ion plating system in accordance with the present invention; and
Fig. 2 is a schematic diagram illustrating a plan view of the system of Fig. 1.
Referring now to the drawings, a magnetron sputter ion plating system embodying the invention comprises a magnetron housing 3 enclosing an array of magnetrons 4 arranged to form a closed magnetic field (this term including a substantially closed magnetic field) 'in the manner of US-A-5556519 and a substrate (or substrate holder) 5 located within the closed field generated by the magnetrons 4. The position of the substrate 5 is not limited to that shown in the drawings . The substrate 5 may be moved up or down or radially relative to the magnetrons 4 and may be wider or narrower than shown. The shape of the substrate 5 may also vary; it may be planar or cylindrical or adopt any other shape in one, two or three dimensions .
The closed field system increases the ionisation of the species inside the magnetron system by reducing the loss of electrons (e.g. to the walls and other earthed surfaces) .
In accordance with the invention, the performance of the closed field magnetron system is enhanced by the addition of an inductive antenna 1. The antenna 1 can take various forms; e.g. single or multi-turn coil, spiral, helical, cylindrical or planar. It may be located inside or outside of the magnetron system housing 3. When located outside the housing 3 (as in the illustrated example) , a dielectric element such as dielectric plate 2 may be employed to couple the power from the antenna into the magnetron housing space. The dielectric element 2 may be of any suitable dielectric material, such as quartz. In such a system, a conductive plate (not shown) may also be employed in order to reduce capacitive coupling between the antenna 1 and the plasma inside the magnetron housing 3.
The antenna 1 serves as an electron source to increase the number of electrons in the system by applying a time varying voltage to the antenna 1. The time varying voltage will generally have a frequency in the radio frequency (RF) range and may be applied continuously or may be pulsed. A typical frequency for the voltage is of the order of 2 MHz. Frequencies in the range 0.5 MHz to 30 MHz will provide similar effects to those obtained with 2 MHz. Useful results may also be obtained with frequencies as low as 10 kHz and as high as 3 GHz or more. A matching network (not shown) may be employed between the voltage source (not shown) and the antenna 1 in order to optimise the power transfer to the antenna/plasma. Wherever used herein, references to AC or alternating current includes alternating current in the RF frequency range and in the above mentioned range of 10 kHz to 3 GHz or more.
It is acknowledged here that it is known to employ RF powered coils to provide an inductively coupled system in applications such as etching and also to increase ionisation in conventional planar single- magnetron systems. However, it is not obvious that these known techniques could be usefully employed with a closed field magnetron system. The time- varying voltages applied to inductive antennae generate substantial time-varying magnetic fields. If conventional inductive coupling techniques employing RF powered coils were applied directly to closed field magnetron systems, the voltage- generated magnetic fields from the antennae would overlap and interfere with the magnetic fields of the closed field magnetron system. The resultant combined field may be such that the closed field set-up is lost so that electron confinement no longer occurs or electron confinement efficiency is substantially reduced, thereby resulting in loss of ionisation rather than increased ionisation.
The preferred embodiments of the present invention include arrangements which avoid or at least limit interference between the magnetic fields of the magnetron system and those generated by the inductive antenna. In the illustrated example, this is achieved by locating the antenna 1 in such a manner that the magnetic fields generated by the antenna do not interact with the magnetic fields of the closed field magnetron system or do so to only a slight extent. The antenna 1 (shown here as a single turn planar coil) is located above the plane of the magnetrons 4 (i.e. outwith the volume occupied by the magnetrons) and substantially away from the magnetrons 4, towards the central axis of the magnetron housing 3, where the magnetic field produced by the closed field magnetron system is weakest. This limits any interference between the respective fields of the antenna and the magnetron system to an extent such that the electron confinement provided by the closed field magnetron arrangement is not adversely affected or is affected only to a minimal extent.
An alternative or supplementary method is to pulse the power applied to the antenna 1. This generates temporary induced magnetic fields from the antenna 1, which arise and then disappear according to the pulse rate of the applied power. These temporary induced magnetic fields interact only weakly with the "permanent" magnetic fields from the closed field magnetron system, again avoiding destruction of the overall closed magnetron field arrangement, or at worst causing only temporary loss of electron confinement during which relatively few electrons are lost from the system. This method may be employed with any of a variety of antenna designs and locations with respect to the magnetron housing. However, it is preferred to combine the use of a pulsed antenna power supply with an antenna arrangement which itself minimises interference between the antenna and magnetron fields.
For the purposes of the present invention, the closed field magnetron system may employ any or all of the variations disclosed in US-A-5556519, and may incorporate further variations and improvements thereon. By way of example: The system may employ two or more magnetrons; the overall system geometry may be circular in plan or may be of any other suitable shape. The ionising gas may be argon or any other suitable gas or mixture of gases, either inert or reactive, and may contain atoms or particles of species intended to form part of the coating applied by the system. The material to be sputtered from the magnetrons may be conducting, semi-conducting or insulating. For conducting materials, the power supply to the magnetrons may be from a constant or pulsed DC or AC source. For semi-conducting or insulating materials, the power supply to the magnetrons is preferably from a pulsed DC source or from an AC source in order to provide more efficient sputtering from the magnetron targets. Where pulsed power supplies are used, the pulsed signal may be symmetric or asymmetric, and the pulsed signal may be bipolar or unipolar. The system may also include a pumping port to control the pressure of the ionising gas (es) in the system.
Improvements and modifications may be incorporated without departing from the scope of the invention.

Claims

Claims
1. A magnetron sputter ion plating system of the type in which two or more magnetrons are arranged to provide a closed magnetic field, in combination with an inductive coil arranged to provide an inductively coupled plasma source.
2. A system as claimed in claim 1, wherein the inductive coil is arranged so as to limit interference between magnetic fields generated by the coil and magnetic fields generated by the magnetrons, thereby limiting reduction in the electron confinement efficiency of the closed field magnetron system.
3. A system as claimed in claim 1 or claim 2, wherein the inductive coil is located outwith the volume enclosed by the magnetrons.
4. A system as claimed in claim 3, wherein the inductive coil is located on a central axis of the volume enclosed by the magnetrons.
5. A system as claimed in any preceding claim, wherein the inductive coil is located outwith a main housing enclosing the magnetrons.
6. A system as claimed in claim 5, wherein the inductive coil is located adjacent a dielectric element incorporated into said housing.
7. A system as claimed in any preceding claim, further including a first power supply for applying a time-varying voltage to said inductive coil.
8. A system as claimed in claim 7, wherein said power supply is adapted to apply a pulsed voltage to said coil .
PCT/GB2001/000986 2000-03-08 2001-03-07 Magnetron sputter ion plating system WO2001067484A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU2001237583A AU2001237583A1 (en) 2000-03-08 2001-03-07 Magnetron sputter ion plating system

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GB0005411A GB0005411D0 (en) 2000-03-08 2000-03-08 Magnetron sputter ion plating system
GB0005411.4 2000-03-08

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104831238A (en) * 2015-03-31 2015-08-12 嘉兴中科奥度新材料有限公司 Technology for ion plating of composite material with nanometals, and product thereof
WO2018161511A1 (en) * 2017-03-09 2018-09-13 北京北方华创微电子装备有限公司 Magnetic field generation mechanism of reaction chamber and reaction chamber

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1991014797A1 (en) * 1990-03-17 1991-10-03 D.G. Teer Coating Services Limited Magnetron sputter ion plating
WO1992007969A1 (en) * 1990-10-31 1992-05-14 International Business Machines Corporation Apparatus for depositing material into high aspect ratio holes
EP0955390A2 (en) * 1998-04-29 1999-11-10 General Motors Corporation Low temperature deposition of transition metal nitrides

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1991014797A1 (en) * 1990-03-17 1991-10-03 D.G. Teer Coating Services Limited Magnetron sputter ion plating
WO1992007969A1 (en) * 1990-10-31 1992-05-14 International Business Machines Corporation Apparatus for depositing material into high aspect ratio holes
EP0955390A2 (en) * 1998-04-29 1999-11-10 General Motors Corporation Low temperature deposition of transition metal nitrides

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104831238A (en) * 2015-03-31 2015-08-12 嘉兴中科奥度新材料有限公司 Technology for ion plating of composite material with nanometals, and product thereof
WO2018161511A1 (en) * 2017-03-09 2018-09-13 北京北方华创微电子装备有限公司 Magnetic field generation mechanism of reaction chamber and reaction chamber

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Publication number Publication date
GB0005411D0 (en) 2000-04-26
AU2001237583A1 (en) 2001-09-17

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