WO2001065588A3 - Method and apparatus for performing highly ionized, low energy physical vapor deposition - Google Patents

Method and apparatus for performing highly ionized, low energy physical vapor deposition Download PDF

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Publication number
WO2001065588A3
WO2001065588A3 PCT/US2001/006954 US0106954W WO0165588A3 WO 2001065588 A3 WO2001065588 A3 WO 2001065588A3 US 0106954 W US0106954 W US 0106954W WO 0165588 A3 WO0165588 A3 WO 0165588A3
Authority
WO
WIPO (PCT)
Prior art keywords
low energy
vapor deposition
physical vapor
highly ionized
performing highly
Prior art date
Application number
PCT/US2001/006954
Other languages
French (fr)
Other versions
WO2001065588A2 (en
Inventor
Jianming Fu
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of WO2001065588A2 publication Critical patent/WO2001065588A2/en
Publication of WO2001065588A3 publication Critical patent/WO2001065588A3/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

A method and apparatus for performing highly ionized and low energy physical vapor deposition (PVD). The pressure is selected to increase the ionization of atoms sputtered from a target and de-energize these ions. The highly ionized, low energy target atoms are more easily attracted to a substrate that is biased.
PCT/US2001/006954 2000-03-02 2001-03-02 Method and apparatus for performing highly ionized, low energy physical vapor deposition WO2001065588A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US51818100A 2000-03-02 2000-03-02
US09/518,181 2000-03-02

Publications (2)

Publication Number Publication Date
WO2001065588A2 WO2001065588A2 (en) 2001-09-07
WO2001065588A3 true WO2001065588A3 (en) 2002-02-07

Family

ID=24062899

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2001/006954 WO2001065588A2 (en) 2000-03-02 2001-03-02 Method and apparatus for performing highly ionized, low energy physical vapor deposition

Country Status (1)

Country Link
WO (1) WO2001065588A2 (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5178739A (en) * 1990-10-31 1993-01-12 International Business Machines Corporation Apparatus for depositing material into high aspect ratio holes
JPH10330936A (en) * 1997-06-02 1998-12-15 Sadao Kadokura Opposite target type sputtering device
JPH11302839A (en) * 1998-04-17 1999-11-02 Toshiba Corp Sputtering system

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5178739A (en) * 1990-10-31 1993-01-12 International Business Machines Corporation Apparatus for depositing material into high aspect ratio holes
JPH10330936A (en) * 1997-06-02 1998-12-15 Sadao Kadokura Opposite target type sputtering device
US6156172A (en) * 1997-06-02 2000-12-05 Sadao Kadkura Facing target type sputtering apparatus
JPH11302839A (en) * 1998-04-17 1999-11-02 Toshiba Corp Sputtering system
US6077406A (en) * 1998-04-17 2000-06-20 Kabushiki Kaisha Toshiba Sputtering system

Also Published As

Publication number Publication date
WO2001065588A2 (en) 2001-09-07

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