EP1548150A4 - Plasma processing system and its substrate processing process, plasma enhanced chemical vapor deposition system and its film deposition process - Google Patents

Plasma processing system and its substrate processing process, plasma enhanced chemical vapor deposition system and its film deposition process

Info

Publication number
EP1548150A4
EP1548150A4 EP03748631A EP03748631A EP1548150A4 EP 1548150 A4 EP1548150 A4 EP 1548150A4 EP 03748631 A EP03748631 A EP 03748631A EP 03748631 A EP03748631 A EP 03748631A EP 1548150 A4 EP1548150 A4 EP 1548150A4
Authority
EP
European Patent Office
Prior art keywords
plasma
chemical vapor
enhanced chemical
vapor deposition
substrate processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP03748631A
Other languages
German (de)
French (fr)
Other versions
EP1548150A1 (en
Inventor
K Kawamura
A Yamada
H Mashima
K Tagashira
Y Takeuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Heavy Industries Ltd
Original Assignee
Mitsubishi Heavy Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Heavy Industries Ltd filed Critical Mitsubishi Heavy Industries Ltd
Publication of EP1548150A1 publication Critical patent/EP1548150A1/en
Publication of EP1548150A4 publication Critical patent/EP1548150A4/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32541—Shape

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
EP03748631A 2002-10-01 2003-10-01 Plasma processing system and its substrate processing process, plasma enhanced chemical vapor deposition system and its film deposition process Withdrawn EP1548150A4 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2002288997A JP3872741B2 (en) 2002-10-01 2002-10-01 Plasma chemical vapor deposition equipment
JP2002288997 2002-10-01
PCT/JP2003/012563 WO2004031442A1 (en) 2002-10-01 2003-10-01 Plasma processing system and its substrate processing process, plasma enhanced chemical vapor deposition system and its film deposition process

Publications (2)

Publication Number Publication Date
EP1548150A1 EP1548150A1 (en) 2005-06-29
EP1548150A4 true EP1548150A4 (en) 2012-05-30

Family

ID=32063702

Family Applications (1)

Application Number Title Priority Date Filing Date
EP03748631A Withdrawn EP1548150A4 (en) 2002-10-01 2003-10-01 Plasma processing system and its substrate processing process, plasma enhanced chemical vapor deposition system and its film deposition process

Country Status (4)

Country Link
US (1) US20050223990A1 (en)
EP (1) EP1548150A4 (en)
JP (1) JP3872741B2 (en)
WO (1) WO2004031442A1 (en)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7205034B2 (en) * 2002-10-29 2007-04-17 Mitsubishi Heavy Industries, Ltd. Method and device for generating uniform high-frequency plasma over large surface area used for plasma chemical vapor deposition apparatus
JP4088616B2 (en) * 2004-08-30 2008-05-21 三菱重工業株式会社 Plasma CVD apparatus, substrate processing system, and film forming / self-cleaning method
JP4884793B2 (en) * 2006-02-09 2012-02-29 三菱重工業株式会社 Thin film manufacturing apparatus and solar cell manufacturing method
JP4817923B2 (en) * 2006-03-29 2011-11-16 三井造船株式会社 Plasma generating apparatus and plasma generating method
JP5039476B2 (en) * 2007-08-09 2012-10-03 三菱重工業株式会社 Vacuum processing apparatus and method for adjusting vacuum processing apparatus
DE102009014414A1 (en) 2008-10-29 2010-05-12 Leybold Optics Gmbh VHF electrode assembly, apparatus and method
JP2013004172A (en) * 2011-06-10 2013-01-07 Tokyo Electron Ltd High-frequency power distribution device, and substrate processing device using the same
HUP1100436A2 (en) * 2011-08-15 2013-02-28 Ecosolifer Ag Gas flow system for using in reaction chamber
CN103943449B (en) * 2013-06-28 2016-08-17 厦门天马微电子有限公司 The measuring method of a kind of radio frequency cross talk, equipment and system
CN110029328B (en) * 2019-05-22 2024-06-18 上海稷以科技有限公司 Box-type electrode for improving deposition uniformity of front and back planes
KR102593141B1 (en) * 2020-11-05 2023-10-25 세메스 주식회사 Apparatus for treating substrate and method for treating apparatus

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0955665A2 (en) * 1998-04-28 1999-11-10 Mitsubishi Heavy Industries, Ltd. Plasma chemical vapor deposition apparatus
EP1107653A1 (en) * 1999-06-17 2001-06-13 Mitsubishi Heavy Industries, Ltd. Discharge electrode, high-frequency plasma generator, method of power feeding, and method of manufacturing semiconductor device

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2816365B2 (en) * 1990-09-19 1998-10-27 株式会社 ユーハ味覚糖精密工学研究所 Strain-free precision processing equipment by radical reaction
JP3697110B2 (en) * 1998-05-29 2005-09-21 三菱重工業株式会社 Plasma chemical vapor deposition equipment
JP4286404B2 (en) * 1999-10-15 2009-07-01 東京エレクトロン株式会社 Matching device and plasma processing apparatus
JP3377773B2 (en) * 2000-03-24 2003-02-17 三菱重工業株式会社 Power supply method to discharge electrode, high-frequency plasma generation method, and semiconductor manufacturing method
TW507256B (en) * 2000-03-13 2002-10-21 Mitsubishi Heavy Ind Ltd Discharge plasma generating method, discharge plasma generating apparatus, semiconductor device fabrication method, and semiconductor device fabrication apparatus
JP3418590B2 (en) * 2000-05-17 2003-06-23 日本高周波株式会社 Uniform electric field distribution type plasma processing system

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0955665A2 (en) * 1998-04-28 1999-11-10 Mitsubishi Heavy Industries, Ltd. Plasma chemical vapor deposition apparatus
EP1107653A1 (en) * 1999-06-17 2001-06-13 Mitsubishi Heavy Industries, Ltd. Discharge electrode, high-frequency plasma generator, method of power feeding, and method of manufacturing semiconductor device

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO2004031442A1 *

Also Published As

Publication number Publication date
JP3872741B2 (en) 2007-01-24
WO2004031442A1 (en) 2004-04-15
US20050223990A1 (en) 2005-10-13
JP2004124153A (en) 2004-04-22
EP1548150A1 (en) 2005-06-29

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Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

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17P Request for examination filed

Effective date: 20050121

AK Designated contracting states

Kind code of ref document: A1

Designated state(s): CH DE GB LI

A4 Supplementary search report drawn up and despatched

Effective date: 20120503

RIC1 Information provided on ipc code assigned before grant

Ipc: H01L 21/205 20060101ALI20120425BHEP

Ipc: H01J 37/32 20060101ALI20120425BHEP

Ipc: H05H 1/46 20060101ALI20120425BHEP

Ipc: C23C 16/509 20060101AFI20120425BHEP

Ipc: B01J 19/08 20060101ALI20120425BHEP

17Q First examination report despatched

Effective date: 20121004

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN

18D Application deemed to be withdrawn

Effective date: 20130215