WO2001054862A1 - System and method for controlled polishing and planarization of semiconductor wafers - Google Patents
System and method for controlled polishing and planarization of semiconductor wafers Download PDFInfo
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- WO2001054862A1 WO2001054862A1 PCT/US2001/001044 US0101044W WO0154862A1 WO 2001054862 A1 WO2001054862 A1 WO 2001054862A1 US 0101044 W US0101044 W US 0101044W WO 0154862 A1 WO0154862 A1 WO 0154862A1
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- Prior art keywords
- wafer
- polishing pad
- pad
- polishing
- semiconductor wafer
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- 238000005498 polishing Methods 0.000 title claims abstract description 144
- 239000004065 semiconductor Substances 0.000 title claims abstract description 35
- 238000000034 method Methods 0.000 title claims abstract description 33
- 235000012431 wafers Nutrition 0.000 title abstract description 192
- 230000003750 conditioning effect Effects 0.000 claims abstract description 10
- 238000011065 in-situ storage Methods 0.000 claims abstract description 9
- 239000000463 material Substances 0.000 claims description 13
- 230000007246 mechanism Effects 0.000 claims description 11
- 239000012530 fluid Substances 0.000 claims description 10
- 239000002002 slurry Substances 0.000 claims description 10
- 239000003082 abrasive agent Substances 0.000 claims description 4
- 238000004140 cleaning Methods 0.000 claims description 4
- 238000004891 communication Methods 0.000 claims description 3
- 230000004044 response Effects 0.000 claims description 3
- 230000008569 process Effects 0.000 description 14
- 230000007723 transport mechanism Effects 0.000 description 9
- 238000012545 processing Methods 0.000 description 8
- 239000000126 substance Substances 0.000 description 5
- 229910003460 diamond Inorganic materials 0.000 description 4
- 239000010432 diamond Substances 0.000 description 4
- 238000007689 inspection Methods 0.000 description 4
- 230000000712 assembly Effects 0.000 description 3
- 238000000429 assembly Methods 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 230000001143 conditioned effect Effects 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 239000004677 Nylon Substances 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229920001778 nylon Polymers 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000007517 polishing process Methods 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- GVVXWEKLOLROBR-UHFFFAOYSA-N 4-bromo-6-tert-butyl-3-hydroxy-6-methylpyran-2,5-dione Chemical compound CC(C)(C)C1(C)OC(=O)C(O)=C(Br)C1=O GVVXWEKLOLROBR-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000872 buffer Substances 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 1
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000011066 ex-situ storage Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
- B24B53/017—Devices or means for dressing, cleaning or otherwise conditioning lapping tools
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/02—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent
- B24B49/04—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent involving measurement of the workpiece at the place of grinding during grinding operation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B51/00—Arrangements for automatic control of a series of individual steps in grinding a workpiece
Definitions
- the present invention relates to planarization of semiconductor wafers using a chemical mechanical planarization technique. More particularly, the present invention relates to an improved system and method for planarizing semiconductor wafers in a controlled manner over a variable geometry contact area.
- BACKGROUND Semiconductor wafers are typically fabricated with multiple copies of a desired integrated circuit design that will later be separated and made into individual chips.
- a common technique for forming the circuitry on a semiconductor wafer is photolithography. Part of photolithography process requires that a special camera focus on the wafer to project an image of the circuit on the wafer. The ability of the camera to focus on the surface of the wafer is often adversely affected by inconsistencies or unevenness in the wafer surface. This sensitivity is accentuated with the current drive for smaller, more highly integrated circuit designs which cannot tolerate certain nonuniformities within a particular die or between a plurality of dies on a wafer.
- each layer can add or create topography on the wafer that must be smoothed out before generating the next layer.
- Chemical mechanical planarization (Oxide-CMP) techniques are used to planarize and polish each layer of a wafer.
- Metal-CMP is also widely used to shape within-die metal plugs and wires, removing excess metal from the wafer surface and only leaving metal within the desired plugs and trenches on the wafer.
- Available CMP systems commonly called wafer polishers, often use a rotating wafer holder that brings the wafer into contact with a polishing pad rotating in the plane of the wafer surface to be planarized.
- a chemical polishing agent or slurry containing microabrasives and surface modifying chemicals is applied to the polishing pad to polish the wafer.
- the wafer holder then presses the wafer against the rotating polishing pad and is rotated to polish and planarize the wafer.
- Some available wafer polishers use orbital motion, or a linear belt rather than a rotating surface to carry the polishing pad.
- the surface of the wafer is often completely covered by, and in contact with, the polishing pad to simultaneously polish the entire surface.
- One drawback of polishing the entire surface simultaneously is that the various circuits on the wafer, even if the wafer begins the CMP process perfectly flat, may have a different response to the CMP process. This may be due to the different types of materials deposited on parts of the wafer or the density of materials on a certain portion of the wafer. Simultaneous polishing of the entire surface will often clear some spots of the wafer faster than others because of this differential, uneven rate of clearing and may result in overpolishing of certain areas of the wafer.
- FIG. 1 is a side cut-away view of a semiconductor wafer polishing system according to a preferred embodiment
- FIG. 2 is a top plan view of a wafer carrier assembly suitable for use in the system of FIG. 1;
- FIG. 3 is a sectional view taken along line 3-3 of FIG.2;
- FIG. 4 is an exploded sectional view of a polishing pad carrier assembly and tool changer suitable for use in the system of FIG. 1 ;
- FIGS. 5A-5D illustrate top plan views of different embodiments of a surface of a pad dressing assembly suitable for use in the system of FIG. 1 ;
- FIG. 6 is a block diagram illustrating the communication lines between . the microprocessor and the individual components of the polisher of FIG. 1;
- FIG. 7 is a top plan view illustrating the movement of the components of the system of FIG. 1 ;
- FIG. 8 is a diagram illustrating a wafer processing system incorporating the wafer polisher of FIG. 1.
- FIG. 1 A preferred embodiment of a wafer polisher 10 is illustrated in FIG. 1.
- the polisher 10 includes a wafer carrier assembly 12, a pad carrier assembly 14 and a pad dressing assembly 16.
- the wafer carrier assembly 12 and pad dressing assembly 16 are mounted in a frame 18.
- the wafer carrier assembly includes a wafer head 20 mounted on a shaft 22 rotatably connected to a motor 24.
- the wafer head 20 is designed to maintain a rigid planar surface that will not flex or bend when polishing pressure is received from the pad carrier assembly 14.
- a circular bearing 26, or other type of support is positioned between the wafer head 20 and an upper surface 28 of the frame 18 along a circumference of the wafer head 20 in order to provide additional support to the wafer head 20.
- the wafer carrier assembly 20 may be constructed with a shaft 22 having sufficient strength to avoid any deflections.
- the wafer head 20 of the wafer carrier assembly 12 is further described with respect to FIGS. 2 and 3.
- the wafer head 20 preferably has a wafer receiving region 30 for receiving and maintaining a semiconductor wafer in a fixed position during polishing.
- the wafer receiving area 30 may be a recessed area as shown in FIG. 3 or may be an area centered at the center of rotation of the wafer head 20. Any of a number of known methods for maintaining contact between the wafer and the wafer head 20 during CMP processing may be implemented.
- the wafer receiving area 30 of the head 20 includes a plurality of air passages 32 for providing a flow of air, or receiving a vacuum, useful in maintaining or releasing the wafer from the wafer head 20.
- a porous ceramic or metal material may also be used to allow for a vacuum to be applied to a wafer.
- Other methods of maintaining the wafer against the wafer carrier for example adhesives, a circumferentially oriented clamp, or surface tension from a liquid, may be used.
- One or more wafer lifting shafts 34 are movably positioned between a recessed location within the wafer head and a position extending away from the wafer receiving area 30 of the head 20 to assist in loading and unloading a wafer from a wafer transport mechanism, such as a robot.
- Each wafer lifting shaft may be operated pneumatically, hydraulically, electrically, magnetically or through any other means.
- the wafer head 20 may be fabricated without any wafer lifting shafts 34 and wafers may be loaded or unloaded from the wafer head using a vacuum assisted method.
- the pad carrier assembly 14 includes a polishing pad 36 attached to a pad support surface 40 of a pad carrier head 38.
- the polishing pad 36 may be any of a number of known polishing materials suitable for planarizing and polishing semiconductor wafers.
- the polishing pad may be the type of pad used in conjunction with abrasive slurry, such as the IC 1000 pad available from Rodel Corporation of Delaware.
- the pad may be constructed of a fixed abrasive material that does not require an abrasive containing slurry.
- the diameter of the polishing pad 36 is preferably equal to, or substantially the same as, the diameter of the wafer W, other diameter ratios of the polishing pad and wafer are contemplated.
- the polishing pad size may be anywhere in the range of the size of a single die on the wafer to an area twice as large as that of the wafer.
- Pad dressing surfaces having a an area greater than that of the wafer may be advantageous to account for a wider range of motion of the polishing pad, for example in situations where the polishing pad is moved in a manner that would position the center of the polishing pad off of an imaginary line formed between the center of the wafer and the center of the pad dressing surface.
- the area of the pad dressing heads is preferably sufficient to condition and support the polishing pad used.
- the pad carrier head 38 is preferably attached to a spindle 42 through male and female 44, 46 portions of a tool changer 48.
- the tool changer preferably allows for interchangeability between pad carrier heads 38 so that different CMP processes may be applied to the same wafer by changing wafer heads and any associated types of abrasive polishing chemistries.
- a pad 36 may receive abrasive slurry through passages 50 from the pad carrier head 38 and tool changer 44, 46 that are fed by one or more slurries applied lines 52 that may be within the spindle 42.
- the spindle is rotatably mounted within a spindle drive assembly 54 mounted to a spindle transport mechanism 56.
- the transport mechanism may be any of a number of mechanical, electrical or pneumatic devices having a controllable reciprocating or orbital motion, or a rotating arm mechanism, that are capable of moving the polishing pad to a plurality of discrete positions on the wafer during a polishing operation.
- the spindle drive assembly 54 is designed to rotate the polishing pad 36 on the polishing pad carrier head 38 and it is designed to allow for movement of the spindle to move the polishing pad towards or away from the plane of the wafer W as well as apply a totally controlled polishing pressure to the wafer during CMP processing. It also allows easy access to the pad carrier and facilities assembly automatic replacement of the polishing pad.
- a suitable spindle drive assembly such as the one used in the TERESTM polisher available from Lam Research Corporation in Fremont, California, may be used to accomplish this task.
- the spindle transport mechanism 56 may be any of a number of mechanical or electrical devices capable of transporting the spindle in a direction coplanar to the wafer W being polished.
- polishing pad 36 may be precisely positioned and/or oscillated, if required, in a linear direction about a position along a radius of the wafer W.
- a pad dressing assembly 16 is preferably positioned adjacent to the wafer carrier assembly and opposite the pad carrier assembly 14. The pad dressing assembly 16 is designed to provide in-situ and ex-situ conditioning and cleaning of the polishing pad 36.
- the size of the active surface 58 of the pad dressing assembly 16 is preferably substantially the same as the area of the polishing pad.
- the active surface of the pad dressing assembly may also be larger or smaller than the area of the polishing pad in other embodiments.
- the pad dressing assembly may also consist of multiple rotatable surfaces in other embodiments.
- the pad dressing assembly 16 has a surface 58 coplanar with the surface of the wafer W being processed
- the size of the active area of the pad dressing assembly is at least as great as that of the polishing pad 36, consisting of a single or smaller multiple heads).
- the surface 58 of the pad dressing assembly 16 is affixed to a pad dressing head 60 attached to a shaft 62 rotatably mounted in a motor 64.
- a plane adjustment mechanism 66 may be used to adjust the position of the pad dressing assembly 16.
- the plane adjustment mechanism 66 may be a mechanical device that may be loosened, adjusted to compensate for height variations, and retightened, between CMP processing runs.
- the plane adjustment mechanism may be an active mechanically, or electrically driven device, such as a spring or pneumatic cylinder, that continuously puts an upward pressure on the pad dressing head 60 such that the pressure of the pad carrier assembly 14 against the pad dressing surface 58 maintains a pad dressing surface in a coplanar relationship with the wafer W mounted on the wafer carrier assembly 12.
- a three point balancing device having three separately height adjustable shafts, may be used to adjust the plane of the pad dressing surface and/or the wafer carrier head.
- the pad dressing head 60 may be supported by a circular bearing or may be supported by the shaft 62 alone.
- the pad dressing surface may be completely covered with a fixed abrasive media 70 such as alumina, ceria and diamond available from 3M and Diamonex.
- a plurality of orifices 72 for transporting a fluid, such as deionized water, slurry or other desired chemistry spray are dispersed across the surface.
- the active surface of the pad dressing assembly may consist of a single dressing feature, such as a diamond coated plate or pad, or may > consist of a combination of several pieces of different materials.
- the surface of the pad dressing head is divided in sections and includes a set of various standard sized pad conditioning sections, such as a fixed abrasive unit, a brush and spray unit, sprayers and other types of known pad dressing services.
- each section of the surface of the pad dressing head may have independently controllable actuators that provide for rotational and up/down motion, and a liquid supply port.
- the pad dressing surface may have a fixed abrasive 74 on one half of the surface, a clean pad 76 on the opposite half of the surface, and an array of fluid dispensing orifices 78 positioned along the clean pad section.
- the clean pad may be a poromeric material such as Polytex available from Rodel Corporation.
- the pad dressing surface may contain a strip of diamond grit 80, a nylon brush
- FIG. 5D Another preferred embodiment is illustrated in FIG. 5D, wherein a fixed abrasive substance 86 is positioned on opposite quarters of the surface while a plurality of fluid orifices 88 and a clean pad 90 are each positioned on a respective one of the remaining two quarters of the surfaces. Any of a number of configurations of abrasive material to abrade and condition the pad, a fluid to rinse the pad, and/or clean pad materials may be utilized. Additionally, any suitable fixed abrasive or fluid may be used.
- the polisher 10 of FIGS. 1-5 is preferably configured with the wafer carrier assembly and pad dressing assembly having a co-planar relationship between their respective surfaces.
- the co-planarity may be manually adjusted or self-adjusting.
- the pad dressing head and wafer carrier head are preferably positioned as close together radially as possible so that the maximum amount of polishing pad material will be conditioned.
- the surface of the pad dressing head is large enough, and positioned close enough to the wafer carrier, such that the entire polishing pad is conditioned after one complete rotation of the pad.
- multiple pad dressing devices may be used to condition the same or different portions of the pad.
- the surface of each pad dressing assembly may be arrayed radially with respect to the wafer carrier head, or may be arrayed in any other desired fashion.
- each of the wafer carrier, pad carrier, and pad dressing assemblies may be constructed having heads that are non- gimbaled.
- the pad carrier head may be a gimbaled head, such as those commonly known in the industry, to compensate for minor inaccuracies in the alignment of the interacting wafer surface, polishing pad and pad dressing surface.
- the wafer carrier head and pad dressing head are preferably oriented with their respective surfaces facing in an upward direction, while the pad carrier head faces downward.
- the wafer and pad dressing heads, and the opposing pad carrier head may be oriented parallel to a non-horizontal plane, such as a vertical plane, or even completely reversed (i.e., polishing pad facing up and wafer and pad dressing surface facing down) depending on space and installation constraints.
- the polisher 10 is controllable by a microprocessor
- the CPU 65 based on instructions stored in a programmable memory 67.
- the instructions may be a list of commands relating to wafer specific polishing schemes that are entered or calculated by a user based on a combination of operational parameters to be sensed or maintained by the various components of the polisher. These parameters may include rotational speed of the carrier heads for the pad, wafer and pad dressing components, position/force information from the spindle drive assembly 54, radial pad position information from the spindle linear transport mechanism 56, and polishing time as maintained by the CPU and adjusted in process by information from the end point detector 61.
- the CPU is preferably in communication with each of the different components of the polisher.
- polishing pad is lowered by the spindle drive assembly such that polishing pad overlaps only a portion of the surface of the wafer as shown in FIG. 7.
- the polisher can be operated to completely cover the surface of the wafer with the pad, the pad is preferably only covering, and in contact with, a portion of the wafer surface at any given time. Also, a portion of the polishing pad that is not covering the wafer is preferably covering, and in contact with, the surface of the pad dressing assembly.
- polishing pad rotates and presses against a portion of the rotating wafer
- another portion of the polishing pad is rotating against the rotating surface of the pad dressing assembly to clean and condition the polishing pad on each rotation of the pad.
- the entire polishing pad is utilized in this continuous process of polishing and pad conditioning.
- the polisher 10 is capable of addressing regional variations in uniformity on a wafer-by-wafer basis. This function is achieved by first obtaining profile information on each wafer and calculating a polishing strategy for the polisher to address the particular non-uniformities of each wafer.
- the wafer profile information may be obtained from earlier measurements determined in processing earlier layers of the particular wafer, or may be measured expressly before the wafer is processed. Any one of a number of known profile measurement techniques may be used to obtain the necessary profile data. For example, a resistance measurement using a four point probe may be taken at points from the center of the wafer to the edge to determine profile properties.
- polishing pad path e.g., polishing pad path, rotational speed of the wafer and pad, downforce applied to the pad, and time at each point on the polishing path
- polishing scheme e.g., polishing pad path, rotational speed of the wafer and pad, downforce applied to the pad, and time at each point on the polishing path
- the wafer lifting shafts 38 in the wafer carrier assembly 12 are activated to lift the wafer from the wafer receiving surface and transfer the wafer to or from the wafer carrying robot. Also, during the CMP process on a particular wafer, it is preferred that the wafer, polishing pad, and pad dressing surface all rotate in the same direction.
- rotational directions are contemplated and rotational speed of the individual assemblies may vary and be varied purposefully during a particular polishing run.
- polishing may progress according to the predetermined polishing scheme.
- the pad, wafer and pad dressing surface will all be rotated at a desired speed. Suitable rotational speeds for the pad, wafer and pad dressing surface may be in the range of 0 - 700 revolutions per minute (r.p.m.). Any combination of rotational speeds and rotational speeds of greater than 700 r.p.m. are also contemplated.
- the linear transport mechanism for the spindle will position the edge of the pad at the first point along the radius of the wafer and the spindle drive assembly will lower the pad until it reaches the surface of the wafer and the desired pressure is applied.
- the polishing pad preferably only covers a portion of the wafer and continues to polish the wafer until the desired polishing time has expired.
- the process status inspection system which may be an end point detector 61 (FIG. 1 ) having one or more transmitter/receiver nodes 63, communicates with the CPU to provide in-situ information on the polishing progress for the target region of the wafer and to update the original polishing time estimate. Any of a number of known surface inspection and end point detection methods (optical, acoustic, thermal, etc.) may be employed. While a predetermined polishing strategy may be applied to each individual wafer, the signal from surface inspection tool may be used for precise adjustment of the time spent by the polishing pad at each location.
- the linear index mechanism moves the polishing pad to the next position and polishes that region.
- the polishing pad preferably maintains contact with the surface of the wafer as it is moved to the next radial position. Additionally, while the polisher may move the polishing pad from a first position, where the edge of the polishing pad starts at the center of the wafer, to subsequent positions radially away from the center in consecutive order until the wafer edge is reached, the profile of a particular wafer may be best addressed by moving in other linear paths.
- the first polish operation may start with the edge of the polishing pad at a point in between the center and edge of the wafer and the polisher may move the polishing pad to positions along the wafer radius toward the edge, and finishing with a final polish with the edge of the pad at the center of the wafer.
- the polishing pad is preferably constantly in contact with the surface of the pad dressing assembly.
- the pad dressing assembly conditions the pad to provide a desired surface and cleans by-products generated by the polishing process.
- the abrasive material on the surface of the pad dressing assembly preferably activates the pad surface while pressurized deionized water or other suitable chemical cleanser is sprayed through the orifices in the surface and against the pad.
- the CPU uses the CPU to monitor the pressure applied by the spindle to the pad carrier head and controllably rotate the pad carrier head and the wafer, the polishing process proceeds until the end point detector indicates that the polisher has finished with a region.
- the CPU Upon receiving information from the end point detector, the CPU instructs the spindle linear transport mechanism 56 to radially move the polishing pad with respect to the center of the wafer to draw the polishing pad away from the center of the wafer and focus on the next annular region of the wafer.
- the pad and the wafer maintain contact while the pad is withdrawn radially towards the edge of the wafer.
- the spindle linear transport mechanism 56 may simply index in discrete steps movement of the pad.
- the spindle mechanism 56 may index between positions and oscillate back and forth in a radial manner about each index position to assist in smooth transitions between polish regions on the wafer.
- the linear spindle transport mechanism may move in discrete steps, maintain the spindle in a fixed radial position after each step and make use of a polishing pad that is offset from the center of rotation of the polishing pad carrier to provide an oscillating-type movement between the pad and the wafer.
- the polishing pad dressing not only maintains constant contact with the wafer, it also maintains constant contact with the surface of the pad dressing assembly. Each rotation of the polishing pad will bring it first across the wafer and then into contact with various portions of the surface of the pad dressing assembly.
- the polisher 10 may be configured to allow for the pad to completely overlap the wafer, however the pad preferably indexes between various partially overlapping positions with respect to the wafer to assist in avoiding within wafer nonuniformity. Advantages of this configuration and process include the ability to focus the removal rate at various annular portions of the wafer to provide greater polish control and avoid over polish problems often associated with polishing an entire surface of a wafer simultaneously.
- the partial overlapping configuration permits continuous, in-situ pad conditioning.
- a single pad dressing assembly is shown, multiple pad dressing assemblies may also be implemented.
- An advantage of the present polisher 10 is that in-situ pad conditioning may be performed as well as in-situ end point detection based on the fact that the wafer and polishing pad preferably do not completely overlap. Additionally, by starting the overlap of the pad and wafer at a point no greater than the radius of the polishing pad, the polishing pad may be completely conditioned each rotation. Furthermore, cost savings may be achieved by fully utilizing the surface of the polishing pad. Unlike several prior art systems, where the polishing pad is significantly larger than the wafer being polished, the entire surface of the polishing pad is potentially utilized.
- the polisher 10 shown in FIGS. 1-7 may be used as a module 100 in a larger wafer processing system 110 as shown in FIG. 8.
- the wafer processing system 110 preferably is configured to receive semiconductor wafers loaded in standard input cassettes 112 that require planarization and polishing.
- a wafer transport robot 114 may be used to transfer individual wafers from the cassettes to the first module 100 for polishing.
- a second wafer transport robot may be used to transfer the wafer to the next module upon completion of processing at the first module as described with respect to the polisher 10 of FIG. 1.
- the system 110 may have as many modules 100 as desired to address the particular polishing needs of the wafers.
- each module could be implemented with the same type of pad and slurry combination, or no slurry if fixed abrasive techniques are used, and each wafer would be partially planarized at each module such that the cumulative effect of the individual polishes would result in a completely polished wafer after the wafer receives its final partial polish at the last module.
- each polisher module 100 may change polishing pad carriers through the use of a tool changer. This additional flexibility is attainable in the system of FIG. 8 through the use of a pad robot 118 that may cooperate with the spindle drive assembly of each module to switch between pads automatically without the need to dismantle the entire system.
- Multi-compartment pad carrier head storage bins for fresh pads 120 and used pads 122 may be positioned adjacent each module to permit efficient changing of pad carrier heads attached to worn pads with pad carrier heads having fresh pads.
- a cataloging mechanism such as a simple barcode scanning technique, wafer pad carriers having different types of pads may be catalogued and placed at each module so that numerous combinations of pads may be assembled in the system 100.
- the second wafer robot 116 may pass the wafer on to various post CMP modules 124 for cleaning and buffing.
- the post CMP modules may be rotary buffers, double sided scrubbers, or other desired post CMP devices.
- a third wafer robot 126 removes each wafer from the post CMP modules and places them in the output cassettes when polishing and cleaning is complete.
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- Power Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Grinding-Machine Dressing And Accessory Apparatuses (AREA)
Abstract
Description
Claims
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP01946810A EP1250215B1 (en) | 2000-01-28 | 2001-01-12 | System and method for controlled polishing and planarization of semiconductor wafers |
JP2001554832A JP4831910B2 (en) | 2000-01-28 | 2001-01-12 | System and method for controlled polishing and planarization of semiconductor wafers |
AU2001229403A AU2001229403A1 (en) | 2000-01-28 | 2001-01-12 | System and method for controlled polishing and planarization of semiconductor wafers |
DE60102891T DE60102891T2 (en) | 2000-01-28 | 2001-01-12 | DEVICE AND METHOD FOR CONTROLLED POLISHING AND PLANARIZATION OF SEMICONDUCTOR GRINDING |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/493,978 | 2000-01-28 | ||
US09/493,978 US6340326B1 (en) | 2000-01-28 | 2000-01-28 | System and method for controlled polishing and planarization of semiconductor wafers |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2001054862A1 true WO2001054862A1 (en) | 2001-08-02 |
Family
ID=23962506
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2001/001044 WO2001054862A1 (en) | 2000-01-28 | 2001-01-12 | System and method for controlled polishing and planarization of semiconductor wafers |
Country Status (8)
Country | Link |
---|---|
US (2) | US6340326B1 (en) |
EP (1) | EP1250215B1 (en) |
JP (1) | JP4831910B2 (en) |
KR (1) | KR100780977B1 (en) |
AU (1) | AU2001229403A1 (en) |
DE (1) | DE60102891T2 (en) |
TW (1) | TW471994B (en) |
WO (1) | WO2001054862A1 (en) |
Cited By (2)
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WO2002016075A2 (en) * | 2000-08-22 | 2002-02-28 | Lam Research Corporation | Cmp apparatus with an oscillating polishing pad rotating in the opposite direction of the wafer |
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KR101098367B1 (en) | 2009-08-28 | 2011-12-26 | 세메스 주식회사 | Substrate polishing apparatus and method for treating thereof |
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- 2001-01-12 WO PCT/US2001/001044 patent/WO2001054862A1/en active IP Right Grant
- 2001-01-12 AU AU2001229403A patent/AU2001229403A1/en not_active Abandoned
- 2001-01-12 EP EP01946810A patent/EP1250215B1/en not_active Expired - Lifetime
- 2001-01-12 DE DE60102891T patent/DE60102891T2/en not_active Expired - Fee Related
- 2001-01-12 KR KR1020027009738A patent/KR100780977B1/en not_active IP Right Cessation
- 2001-01-12 JP JP2001554832A patent/JP4831910B2/en not_active Expired - Fee Related
- 2001-01-17 TW TW090101044A patent/TW471994B/en not_active IP Right Cessation
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2002016075A2 (en) * | 2000-08-22 | 2002-02-28 | Lam Research Corporation | Cmp apparatus with an oscillating polishing pad rotating in the opposite direction of the wafer |
WO2002016075A3 (en) * | 2000-08-22 | 2002-08-15 | Lam Res Corp | Cmp apparatus with an oscillating polishing pad rotating in the opposite direction of the wafer |
CN109155249A (en) * | 2016-03-25 | 2019-01-04 | 应用材料公司 | Regional area grinding system and grinding pad assembly for grinding system |
CN109155249B (en) * | 2016-03-25 | 2023-06-23 | 应用材料公司 | Localized area polishing system and polishing pad assembly for polishing system |
Also Published As
Publication number | Publication date |
---|---|
KR20020077677A (en) | 2002-10-12 |
JP4831910B2 (en) | 2011-12-07 |
US6340326B1 (en) | 2002-01-22 |
DE60102891T2 (en) | 2005-03-31 |
KR100780977B1 (en) | 2007-11-29 |
US20020137436A1 (en) | 2002-09-26 |
EP1250215A1 (en) | 2002-10-23 |
TW471994B (en) | 2002-01-11 |
JP2003521117A (en) | 2003-07-08 |
EP1250215B1 (en) | 2004-04-21 |
AU2001229403A1 (en) | 2001-08-07 |
DE60102891D1 (en) | 2004-05-27 |
US6729943B2 (en) | 2004-05-04 |
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