JPH07111256A - Semiconductor manufacturing apparatus - Google Patents

Semiconductor manufacturing apparatus

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Publication number
JPH07111256A
JPH07111256A JP28022093A JP28022093A JPH07111256A JP H07111256 A JPH07111256 A JP H07111256A JP 28022093 A JP28022093 A JP 28022093A JP 28022093 A JP28022093 A JP 28022093A JP H07111256 A JPH07111256 A JP H07111256A
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Prior art keywords
polishing
surface
wafer
belt
abrasive
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Pending
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JP28022093A
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Japanese (ja)
Inventor
Akira Ishiguro
Kenichi Tomita
健一 冨田
陽 石黒
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Toshiba Corp
株式会社東芝
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Abstract

PURPOSE: To prevent polishing wastes from re-adhering, keep a polishing rate constant and improve the uniformity of a film on a wafer surface by a method wherein abrasive is changed uniformly and the polishing wastes and reaction products produced by a polishing process are prevented from mixing with the abrasive.
CONSTITUTION: An endless polishing belt 1 which moves in its longitudinal direction at a constant speed and has a belt-shaped polishing surface whose width is smaller than a wafer diameter, a wafer supporting mechanism 17 which attracts a wafer 16 to be polished and is moved reciprocally in a direction perpendicular to the direction of the belt 11, a washing mechanism 21 which cleans the polishing surface of the belt 11 and is provided on the part of a polishing belt track not in contact with the wafer surface and an abrasive supplying mechanism 22 which supplies the abrasive onto the part of the wafer surface not in contact with the polishing surface of the polishing belt 11 to change the abrasive and, at the same time, clean the wafer surface.
COPYRIGHT: (C)1995,JPO

Description

【発明の詳細な説明】 DETAILED DESCRIPTION OF THE INVENTION

【0001】 [0001]

【産業上の利用分野】本発明は、半導体製造装置に関するもので、特にウェーハプロセス中の素子の平坦化、例えば多層配線構造の層間絶縁膜の平坦化のためのポリッシング装置として使用される。 The present invention relates to relates to a semiconductor manufacturing device, is used in particular flattening of elements in the wafer process, for example as a polishing apparatus for planarizing the interlayer insulating film of a multilayer wiring structure.

【0002】 [0002]

【従来の技術】図5は、ウェーハプロセスにおいて、半導体ウェーハの主面上の膜の凹凸を平坦化するのに使用される従来のポリッシング装置の構成の概要を示す断面図である。 BACKGROUND OF THE INVENTION FIG. 5, in the wafer process, a cross-sectional view showing an outline of a configuration of a conventional polishing apparatus used to planarize the unevenness of the film on the main surface of the semiconductor wafer. 被研磨ウェーハ2は、吸着盤3に吸着固定され、吸着盤と共に回転運動する。 Polished wafer 2 is sucked and secured on the suction cup 3, rotational movement together with the suction cup. 4はストッパーの役目をするテンプレートである。 4 is a template that serves as a stopper. 研磨材(例えば、シリカなどの研磨剤のアルカリ懸濁液)を含む研磨面5をつけた定盤6は、吸着盤3に偏心対向して設けられる。 Abrasive (e.g., an alkali suspension of abrasives such as silica) plate 6 carrying thereon an abrasive surface 5 comprising is provided eccentrically opposite the suction cup 3.

【0003】研磨に際して、ウェーハ2は、研磨面5のついた定盤6に押し付けられ、同時にウェーハ2自体も回転し、回転する定盤6に対し偏心運動をしながら研磨が行われる。 [0003] In the polishing, the wafer 2 is pressed against the platen 6 with a polished surface 5, the wafer 2 itself rotates simultaneously polished while the eccentric motion with respect to the base plate 6 to rotate is performed. 研磨材の交換は、ウェーハが押し付けられている領域以外に研磨材を吹き付け、定盤6自体が回転することで新しい研磨材の供給が行われる。 Replacement of abrasive wafer spraying abrasives other than the region where is pressed against surface plate 6 itself is supplied new abrasive by rotating performed.

【0004】このような従来のポリッシング装置では、 [0004] In such a conventional polishing apparatus,
研磨時において、ウェーハ表面が、研磨材を介して定盤に固定された研磨面と接触する面積は、ほぼウェーハ表面と一致する。 During polishing, the wafer surface, the area of ​​contact with the fixed abrasive surface to the base through the abrasive is consistent with substantially wafer surface.

【0005】このため、研磨時には、ウェーハと研磨面間の研磨材の交換が十分でなく、特にウェーハ中心部では、その傾向が著しい。 [0005] Therefore, at the time of polishing, the wafer and not enough replacement of the abrasive between the polishing surface, especially in the center of the wafer, the tendency is remarkable. 従ってポリッシュが進むにつれて、削り滓や、反応生成物等が研磨材中に混在してしまう。 Thus as the polish proceeds, shavings or reaction products resulting in mixed in the abrasive.

【0006】これら削り滓や反応生成物の存在により、 [0006] The presence of these shavings and the reaction product,
ウェーハ面内のポリッシュレートの不均一性が増加すると共に、研磨終了後におけるウェーハ表面への削り滓や反応生成物の再付着による後処理が必要となる。 With non-uniformity of the polishing rate in the wafer surface is increased, the post-processing by re-adhesion of shavings or the reaction product of the wafer surface after completion of polishing is required.

【0007】 [0007]

【発明が解決しようとする課題】これまで述べたように、従来のポリッシング装置では、研磨時、ウェーハの全面が、定盤の研磨面に加圧接触されながら研磨が行われる。 As described up INVENTION Problems to be Solved This, in the conventional polishing apparatus, the polishing, the entire surface of the wafer, the polishing is carried out while being in pressure contact with the polishing surface of the platen. そのため、ウェーハ全面にわたって、研磨面との間の研磨材を常に均一に更新することは非常に難しい。 Therefore, over the entire wafer surface, it is very difficult to always uniformly updated abrasive between the polishing surface.
研磨は、いわゆるケミカルメカニカルポリッシングで行われるので、新鮮な研磨材を含む研磨面と、削り滓や反応生成物が混入した研磨材を含む研磨面とでは、ポリッシュレート(研磨率または研磨の割合)が大きく相異する。 Polishing, so takes place in a so-called chemical mechanical polishing, the polished surface with fresh abrasive, and the abrasive surface comprising an abrasive shavings and the reaction product is mixed, (the ratio of the polishing rate or polishing) polish rate It is different from larger. このため研磨材の交換が均一に行なわれないと、研磨後のウェーハ表面の膜は平坦度が不均一となる。 The exchange of for abrasive is not uniformly performed, the film of the wafer surface after polishing flatness becomes uneven. さらに研磨材に混入した削り滓や反応性生物が、ウェーハに再付着するという課題がある。 Further entrained shavings or reactive organisms abrasive, there is a problem that reattach to the wafer.

【0008】本発明の目的は、研磨材の更新を均一に行ない、かつポリッシュに伴う削り滓や反応生成物の研磨材への混入を抑制することにより、削り滓や反応生成物がウェーハに再付着するのを防止すると共に、ポリッシュレートを一定に保ち、研磨後のウェーハ表面の膜の均一性を向上できる半導体製造装置を提供することである。 An object of the present invention, uniformly performs updating of the abrasive, and by suppressing the contamination of the abrasive shavings and reaction products due to the polish, the shavings or reaction product wafer again is prevented from adhering, maintaining the polishing rate constant, it is to provide a semiconductor manufacturing apparatus capable of improving the uniformity of the film of the wafer surface after polishing.

【0009】 [0009]

【課題を解決するための手段】本発明の半導体製造装置は、研磨材を用いてウェーハ表面に形成された膜を研磨するポリッシング装置において、(a)長手方向に一定速度で無限軌道を形成して移動するウェーハ径より狭い幅の帯状研磨面を有し、該研磨面によりウェーハ表面に形成された膜を研磨する研磨ベルトと、(b)被研磨ウェーハを吸着し、回転及び前記研磨ベルトの移動方向に直交する往復運動をするウェーハ支持機構と、(c)ウェーハ表面の被研磨面と接触する部分以外の研磨ベルト軌道に設けられ、該研磨ベルトの研磨面を洗浄する機構と、(d)研磨ベルトの研磨面に接触していないウェーハ表面に研磨材を吐出し、研磨材を更新すると共にウェーハ表面を洗浄する研磨材供給機構とを、具備することを特徴とする。 Means for Solving the Problems A semiconductor manufacturing apparatus of the present invention is a polishing apparatus for polishing a film formed on the wafer surface using an abrasive to form an endless track at a constant speed (a) a longitudinal direction has a strip-like polished surface having a width narrower than the wafer diameter to move Te, and abrasive belt for polishing a film formed on the wafer surface by the polishing surface, (b) adsorbing the polished wafer, the rotation and the abrasive belt a wafer support mechanism for the reciprocating motion perpendicular to the moving direction, is provided in the polishing belt track other than the portion in contact with the polished surface of the (c) the wafer surface, a mechanism for cleaning the polishing surface of the polishing belt, (d ) ejecting abrasive to the wafer surface not in contact with the polishing surface of the polishing belt, a polishing agent supply mechanism for cleaning the wafer surface updates the abrasive, characterized by including.

【0010】 [0010]

【作用】本発明においては、従来の平面状の研磨面の代わりに、ウェーハ径より狭い幅(例えばウェーハ径の数%程度の幅)の帯状の研磨面を持つ研磨ベルトを使用する。 According to the present invention, instead of a conventional planar abrasive surface, using an abrasive belt with a belt-like grinding surface narrower than the wafer diameter width (a width of the order of a few percent of the wafer diameter). 従って研磨ベルトで覆われるウェーハ表面の面積、 Area of ​​the wafer surface covered with abrasive belt Accordingly,
すなわち研磨面で押圧されているウェーハの被研磨面は、帯状で狭く、かつ回転と前記往復運動を繰り返している。 That the polished surface of the wafer being pressed by the polishing surface is repeated reciprocation narrow belt-shaped, and rotation. 一方、研磨材供給機構から新しい研磨材が、研磨ベルトで覆われていないウェーハ表面に吐出される。 On the other hand, new abrasive from the abrasive supply mechanism is discharged to the wafer surface which is not covered by the abrasive belt. 結果的に研磨ベルトの研磨面とウェーハの被研磨面との間に介在する研磨材は、常に一定の割合で均一に更新される。 Consequently abrasive belt abrasive interposed between the polishing surface and the polished surface of the wafer is always uniformly updated at a constant rate.

【0011】また従来の平面状の研磨面の代わりに帯状の研磨面を使用するので、ウェーハ表面上に、従来よりも、より均一な圧力を加えることができる。 [0011] Since use a strip of the polishing surface in place of conventional planar polished surface on the wafer surface, than a conventional, can be added more uniform pressure.

【0012】また研磨ベルトは、研磨ベルト軌道の途中に設けられた洗浄機構を通り、該機構により、研磨面に付着する削り滓や反応生成物は除去され、常に清浄な研磨面が、ウェーハの被研磨面に移送される。 [0012] abrasive belt passes the cleaning mechanism in provided midway of the abrasive belt track, by the mechanism, slag and reaction products scraping adhering to the polishing surface are removed, always clean polished surface of the wafer It is transferred to the surface to be polished.

【0013】また前述のように研磨ベルトはウェーハを部分的にしか覆っていないので、研磨ベルトに覆われていないウェーハ表面に、研磨材供給機構から十分な量の研磨材が吐出され、研磨材を更新すると共に、ウェーハ表面に残っている削り滓や反応生成物を洗い流す。 [0013] Since the abrasive belt as described above is not only covered partially wafer, the wafer surface which is not covered with the abrasive belt, a sufficient amount of the abrasive is discharged from the abrasive supply mechanism, abrasive updates the wash out shavings or reaction products remaining on the wafer surface.

【0014】上記のように、本発明のポリッシング装置では、ポリッシュに伴う削り滓や反応生成物が研磨ベルトの研磨面及びウェーハの被研磨面を介して研磨材に混入したり、ウェーハに再付着することは防止される。 [0014] As described above, in the polishing apparatus of the present invention, or mixed into the abrasive slag and reaction products scraping due to polish through the polishing surface and the polished surface of the wafer polishing belt, reattach to the wafer it is prevented that.

【0015】上記の諸作用により、研磨後のウェーハ表面の膜の均一性を大幅に向上できる [0015] The various effects described above can be significantly improved uniformity of the film of the wafer surface after polishing

【0016】。 [0016].

【実施例】本発明のポリッシング装置の実施例について、図面を参照して以下説明する。 For the embodiment of EXAMPLES polishing apparatus of the present invention will be described below with reference to the accompanying drawings.

【0017】図1は、本発明のポリッシング装置の構成の一例を示す断面図である。 [0017] Figure 1 is a sectional view showing an example of the configuration of the polishing apparatus of the present invention. 図1において、符号11 In Figure 1, reference numeral 11
は、幅が被研磨ウェーハ(この例では6吋)の径より狭い幅(例えば本実施例では 3〜 6cm)の帯状の研磨ベルト(研磨パッドとも呼ばれる)で、軟質の人造皮革からつくられている。 Is the width of the polished wafer (in this example 6 inches) (also referred to as the polishing pad) belt abrasive belt of narrower than the diameter of the width (for example. 3 to 6 cm in this embodiment), it is made from soft artificial leather there. 研磨ベルト11は、駆動手段12によりベルトの長手方向(矢線13で示す)に一定速度(例、 1.0cm/sec )で、無限軌道を形成して移動(すなわち回転)する。 Abrasive belt 11, in the driving means 12 in the belt longitudinal direction (indicated by arrow 13) constant speed (eg, 1.0 cm / sec), moving to form an endless track (i.e. rotation) is. 研磨ベルトの外表面は、帯状研磨面14を形成し、図1に示すように、その下方の軌道部分は、油圧によるローラー加圧手段15により、被研磨ウェーハ16を押圧する。 The outer surface of the abrasive belt, to form a band-like polishing surface 14, as shown in FIG. 1, the trajectory portion of the downwardly by a roller pressing unit 15 by the hydraulic presses the polished wafer 16.

【0018】ウェーハ支持機構17は、ウェーハ16をバキュームチャックにより反りのない状態に吸着固定する吸着盤18と、吸着盤18を回転する手段19と、吸着盤18及び回転手段19を載置し、研磨ベルト11の研磨面14の移動方向(矢線13)に直交する方向(図1では、紙面に垂直方向)に往復運動をする手段20とにより構成される。 [0018] wafer support mechanism 17, placed a suction cup 18 for chucking the wafer 16 in the absence of warp by vacuum chuck, and means 19 for rotating the suction cup 18, the suction cups 18 and rotating means 19, (in FIG. 1, direction perpendicular to the plane of the drawing) direction perpendicular to the moving direction of the polishing surface 14 (arrow 13) of the grinding belt 11 constituted by a means 20 for reciprocating the.

【0019】研磨ベルト11の研磨面14を洗浄する機構21は、ウェーハ表面の被研磨面と接触する部分以外の研磨ベルト軌道に設けられる。 The mechanism 21 for cleaning the polishing surface 14 of the abrasive belt 11 is provided in the polishing belt track other than the portion in contact with the surface to be polished of the wafer surface. 本実施例では、図1に示すように、上方の軌道で、洗浄後の研磨面が駆動手段12等で汚染されない位置に設ける。 In this embodiment, as shown in FIG. 1, above the track, provided at a position where the polishing surface after washing is not contaminated with the drive means 12 and the like. ウェーハ研磨後の研磨ベルトは、該機構21内を前記一定速度で通過し、 Abrasive belt after wafer polishing is passed through the mechanism 21 by the constant speed,
その研磨面14は、通過しながら洗浄液(例えば純水) The polished surface 14, the cleaning liquid while passing through (e.g. pure water)
により洗浄される。 It is washed with.

【0020】研磨材供給機構22は、研磨材吐出口23 [0020] The abrasive material supply mechanism 22, the polishing material discharge port 23
を有し、研磨材は、該吐出口23より、研磨ベルトの研磨面14と接触していないウェーハ表面に吐出される。 It has, the abrasive, from the discharge port 23, is discharged to the wafer surface not in contact with the polishing surface 14 of the abrasive belt.
研磨材としては、本実施例では、公知のCMP(ケミカル メカニカル ポリッシング)用研磨材を使用する。 The abrasive, in the present embodiment, using known CMP (chemical mechanical polishing) abrasive for.

【0021】次に図1に示すポリッシング装置を使用し、半導体ウェーハを研磨する方法の概要について説明する。 [0021] Then using the polishing apparatus shown in FIG. 1, an outline of the method of polishing a semiconductor wafer.

【0022】ウェーハ16表面に形成された被研磨膜として、図示しないが多層配線構造の素子で、径 6吋のウェーハ主面上に、下敷きとなる酸化膜(コンタクトホール等形成済)、第1層目の配線パターン及びこの配線パターンを覆う層間絶縁膜を、この順で積層した時、この層間絶縁膜(CVDSi O 2膜)を被研磨膜として取り上げる。 [0022] As a film to be polished formed on the wafer 16 surface, with elements not shown a multilayer wiring structure, on the wafer main surface of diameter 6 inches, oxide film serving as the underlay (contact hole or the like has been formed), first a layer of wiring pattern and the interlayer insulating film covering the wiring pattern, when laminated in this order, take up the interlayer insulating film (CVDSi O 2 film) as the film to be polished.

【0023】次にポリッシュ条件は、加圧用ローラー1 [0023] Next, polish conditions, pressurizing roller 1
5による研磨ベルト11の圧力を 7.0PSI 、吸着盤18 7.0PSI pressure of the polishing belt 11 by 5, suction cups 18
の回転数を50rpm 、研磨ベルト11の回転速度を 1.0cm 1.0 cm 50 rpm, the rotational speed of the grinding belt 11 the rotational speed of the
/secとする。 / And sec. また図2及び図3は、研磨ベルト11 The 2 and 3, the abrasive belt 11
及び吸着盤18の運動方向を矢線で示すそれぞれ斜視図と平面図である。 And respectively perspective and plan views each showing the direction of movement of the suction cups 18 by arrows. 矢線13は研磨ベルトの移動方向、矢線24は吸着盤18の回転方向、矢線25は吸着盤の往復運動方向を示す。 Arrow 13 direction of movement of the grinding belt, arrow 24 direction of rotation of the suction cups 18, arrow 25 indicates the reciprocating movement direction of the suction cup.

【0024】研磨材供給機構22の研磨材吐出口23 [0024] The polishing of the material supply mechanism 22 material discharge port 23
は、ウェーハ上部の一定位置(研磨ベルトに対し)に設けられ、これより研磨材が随時(連続的または間欠的) Is provided at a predetermined position of the wafer top (with respect to the grinding belt), abrasives needed than this (continuous or intermittent)
供給される。 It is supplied.

【0025】上記本実施例におけるポリッシュ終了後の残膜の均一性(平坦度)は、± 2〜3%まで向上した。 The uniformity of the residual film after polishing completion in the present embodiment (flatness) is improved to ± 2 to 3%.
またポリッシュ後のダストの数も、前記酸化膜上においては、従来のものの30%程度に減少することができた。 The number of dust after polishing also, on the oxide film could be reduced to about 30% of the conventional ones.

【0026】上記効果が得られる説明としては、次のことがあげられる。 [0026] As an illustration of the above-mentioned effect is obtained, the next it can be cited.

【0027】図3のように、研磨ベルト11は、ウェーハ16の表面を部分的にしか覆っていないので、研磨ベルトにて覆われていない部分においては、ポリッシュ進行に伴う削り滓や反応生成物は、新しい研磨材によって洗い流され、更新される。 [0027] As described above, the polishing belt 11 of Figure 3, since the surface of the wafer 16 not only covers the part, in the portion not covered with the abrasive belt, slag and reaction products scraping due to polish progressive is washed away by the new abrasive, it is updated. 吸着盤18の回転及び往復運動によりウェーハ16は移動するので、ウェーハ16の被研磨面と研磨ベルト11の研磨面との間に介在する研磨材は順次新鮮なものに交換される。 Since the wafer 16 by the rotation and reciprocation of the suction cups 18 moves, abrasive interposed between the polishing surface of the polished surface and the polishing belt 11 of the wafer 16 is replaced with a sequential fresh.

【0028】また研磨面を従来の平面状から帯状にしたことにより、ウェーハ表面上には、結果的に均一な圧力が加えられ、膜の平坦度を向上する。 Further, by which the strip-shaped abrasive surface from a conventional planar, on the wafer surface, resulting in uniform pressure is applied to improve the flatness of the film.

【0029】また研磨ベルト11は、ポリッシュ進行中、順次回転しており、その回転途中にて研磨面洗浄機構21を通るため、研磨ベルトも順次洗浄後の清浄な状態でポリッシュが進められる。 Further polishing belt 11 during polishing progress has rotated sequentially, for passing through the polishing surface cleaning mechanism 21 in its rotational way, polish proceeds in a clean state after also washed abrasive belt.

【0030】なお、研磨ベルト11の加圧方法として、 [0030] It should be noted that, as a pressurizing method of polishing belt 11,
図1に示すローラー加圧法以外に図4に示すうな板ばね26を用いたものなど他の方法でもよい。 The leaf spring 26 Do you 4 in addition to the roller pressing process shown in FIG. 1 or in other ways, such as that used.

【0031】また研磨ベルト11の研磨面14がウェーハ表面を押圧しながら研磨する帯状接触面の幅は、線状以上でウェーハ径を越えない幅であればよい。 [0031] the width of the strip-like contact surface polishing surface 14 of the abrasive belt 11 is polished while pressing the wafer surface may be a width that does not exceed wafer diameter by linear least.

【0032】さらに、ポリッシュ条件は、効果的なポリッシュが行なえれば、上記実施例の条件に限定されない。 Furthermore, polishing conditions, if Re performed effective polish, it is not limited to the conditions of the above embodiment.

【0033】 [0033]

【発明の効果】これまで詳述したように、本発明により、研磨材の更新を均一に行ない、かつポリッシュに伴う削り滓や反応生成物の研磨材への混入を抑制することにより、削り滓や反応生成物がウェーハに再付着するのを防止すると共に、ポリッシュレートを一定に保ち、研磨後のウェーハ表面の膜の均一性(平坦度)を向上できる半導体製造装置を提供することができた。 As described so far, according to the present invention, the present invention, uniformly performs updating of the abrasive, and by suppressing the contamination of the abrasive shavings and reaction products due to polish, shavings together and the reaction product is prevented from re-adhering to the wafer, keeping the polish rate constant, it is possible to provide a semiconductor manufacturing apparatus capable of improving uniformity of the film of the wafer surface after polishing the (flatness) .

【図面の簡単な説明】 BRIEF DESCRIPTION OF THE DRAWINGS

【図1】本発明の半導体製造装置(ポリッシング装置) [1] Semiconductor manufacturing device of the present invention (polishing apparatus)
の構成の一実施例を示す正面図である。 Is a front view showing an embodiment of configurations.

【図2】図1に示すポリッシング装置の研磨ベルト及びウェーハ支持機構のそれぞれの回転及び往復運動方向を説明する斜視図である。 2 is a perspective view illustrating the respective rotation and reciprocation direction of the polishing belt and the wafer support mechanism of the polishing apparatus shown in FIG.

【図3】図1に示すポリッシング装置の研磨ベルト及びウェーハ支持機構のそれぞれの回転及び往復運動方向を説明する平面図である。 3 is a plan view illustrating the respective rotation and reciprocation direction of the polishing belt and the wafer support mechanism of the polishing apparatus shown in FIG.

【図4】本発明のポリッシング装置の構成の他の実施例を示す正面図である。 It is a front view showing another embodiment of the configuration of the polishing apparatus of the present invention; FIG.

【図5】従来のポリッシング装置の構成の一例を示す正面図である。 5 is a front view showing an example of the configuration of a conventional polishing apparatus.

【符号の説明】 DESCRIPTION OF SYMBOLS

11 研磨ベルト 12 研磨ベルトの駆動手段 14 帯状研磨面 15 加圧用ローラー 16 被研磨ウェーハ 17 ウェーハ支持機構 18 吸着盤 19 回転手段 20 往復運動手段 21 研磨面洗浄機構 22 研磨材供給機構 23 研磨材吐出口 26 板ばね 11 abrasive belt 12 drive means 14 belt polishing surface 15 pressing roller 16 be polished wafer 17 wafer support mechanism 18 suction cup 19 rotating means 20 reciprocating means 21 polishing surface cleaning mechanism 22 abrasive supplying mechanism 23 abrasive outlet of the grinding belt 26 leaf spring

Claims (1)

    【特許請求の範囲】 [The claims]
  1. 【請求項1】研磨材を用いてウェーハ表面に形成された膜を研磨するポリッシング装置において、 長手方向に無限軌道を形成して移動するウェーハ径より狭い幅の帯状研磨面を有し、該研磨面によりウェーハ表面に形成された膜を研磨する研磨ベルトと、被研磨ウェーハを吸着し、回転及び前記研磨ベルトの移動方向に直交する往復運動をするウェーハ支持機構と、ウェーハ表面の被研磨面と接触する部分以外の研磨ベルト軌道に設けられ、該研磨ベルトの研磨面を洗浄する機構と、研磨ベルトの研磨面と接触していないウェーハ表面に研磨材を吐出し、研磨材を更新すると共にウェーハ表面を洗浄する研磨材供給機構とを、 具備することを特徴とする半導体製造装置。 1. A abrasive polishing apparatus for polishing a film formed on the wafer surface using, has a strip-like polished surface having a width narrower than the wafer diameter to move to form a track in the longitudinal direction, the polishing a polishing belt for polishing a film formed on the wafer surface by a surface, and the wafer support mechanism for the reciprocating motion adsorbs a polished wafer, perpendicular to the moving direction of rotation and the abrasive belt, and the polished surface of the wafer surface provided in the polishing belt track other than the portion contacting the wafer with ejecting a mechanism for cleaning the polishing surface of the polishing belt, a polishing material to the wafer surface not in contact with the polishing surface of the abrasive belt, to update the abrasive the abrasive supplying mechanism for cleaning the surface, a semiconductor manufacturing apparatus characterized by comprising.
JP28022093A 1993-10-13 1993-10-13 Semiconductor manufacturing apparatus Pending JPH07111256A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP28022093A JPH07111256A (en) 1993-10-13 1993-10-13 Semiconductor manufacturing apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP28022093A JPH07111256A (en) 1993-10-13 1993-10-13 Semiconductor manufacturing apparatus

Publications (1)

Publication Number Publication Date
JPH07111256A true true JPH07111256A (en) 1995-04-25

Family

ID=17621993

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Application Number Title Priority Date Filing Date
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Country Status (1)

Country Link
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Cited By (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0696495A1 (en) * 1994-08-09 1996-02-14 Ontrak Systems, Inc. Linear polisher and method for semiconductor wafer planarization
US5558568A (en) * 1994-10-11 1996-09-24 Ontrak Systems, Inc. Wafer polishing machine with fluid bearings
US6022807A (en) * 1996-04-24 2000-02-08 Micro Processing Technology, Inc. Method for fabricating an integrated circuit
US6135859A (en) * 1999-04-30 2000-10-24 Applied Materials, Inc. Chemical mechanical polishing with a polishing sheet and a support sheet
US6179709B1 (en) * 1999-02-04 2001-01-30 Applied Materials, Inc. In-situ monitoring of linear substrate polishing operations
US6241583B1 (en) 1999-02-04 2001-06-05 Applied Materials, Inc. Chemical mechanical polishing with a plurality of polishing sheets
US6244935B1 (en) 1999-02-04 2001-06-12 Applied Materials, Inc. Apparatus and methods for chemical mechanical polishing with an advanceable polishing sheet
US6340326B1 (en) 2000-01-28 2002-01-22 Lam Research Corporation System and method for controlled polishing and planarization of semiconductor wafers
US6419559B1 (en) 2000-07-10 2002-07-16 Applied Materials, Inc. Using a purge gas in a chemical mechanical polishing apparatus with an incrementally advanceable polishing sheet
US6443815B1 (en) 2000-09-22 2002-09-03 Lam Research Corporation Apparatus and methods for controlling pad conditioning head tilt for chemical mechanical polishing
US6471566B1 (en) 2000-09-18 2002-10-29 Lam Research Corporation Sacrificial retaining ring CMP system and methods for implementing the same
US6475070B1 (en) 1999-02-04 2002-11-05 Applied Materials, Inc. Chemical mechanical polishing with a moving polishing sheet
US6520841B2 (en) 2000-07-10 2003-02-18 Applied Materials, Inc. Apparatus and methods for chemical mechanical polishing with an incrementally advanceable polishing sheet
US6626744B1 (en) 1999-12-17 2003-09-30 Applied Materials, Inc. Planarization system with multiple polishing pads
US6640155B2 (en) 2000-08-22 2003-10-28 Lam Research Corporation Chemical mechanical polishing apparatus and methods with central control of polishing pressure applied by polishing head
US6652357B1 (en) 2000-09-22 2003-11-25 Lam Research Corporation Methods for controlling retaining ring and wafer head tilt for chemical mechanical polishing
US6705930B2 (en) 2000-01-28 2004-03-16 Lam Research Corporation System and method for polishing and planarizing semiconductor wafers using reduced surface area polishing pads and variable partial pad-wafer overlapping techniques
US7008303B2 (en) 2000-08-29 2006-03-07 Applied Materials Inc. Web lift system for chemical mechanical planarization
US7025660B2 (en) 2003-08-15 2006-04-11 Lam Research Corporation Assembly and method for generating a hydrodynamic air bearing
US7481695B2 (en) 2000-08-22 2009-01-27 Lam Research Corporation Polishing apparatus and methods having high processing workload for controlling polishing pressure applied by polishing head

Cited By (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6231427B1 (en) 1994-08-09 2001-05-15 Lam Research Corporation Linear polisher and method for semiconductor wafer planarization
US5692947A (en) * 1994-08-09 1997-12-02 Ontrak Systems, Inc. Linear polisher and method for semiconductor wafer planarization
EP0696495A1 (en) * 1994-08-09 1996-02-14 Ontrak Systems, Inc. Linear polisher and method for semiconductor wafer planarization
US5558568A (en) * 1994-10-11 1996-09-24 Ontrak Systems, Inc. Wafer polishing machine with fluid bearings
US5593344A (en) * 1994-10-11 1997-01-14 Ontrak Systems, Inc. Wafer polishing machine with fluid bearings and drive systems
US6022807A (en) * 1996-04-24 2000-02-08 Micro Processing Technology, Inc. Method for fabricating an integrated circuit
US6475070B1 (en) 1999-02-04 2002-11-05 Applied Materials, Inc. Chemical mechanical polishing with a moving polishing sheet
US6179709B1 (en) * 1999-02-04 2001-01-30 Applied Materials, Inc. In-situ monitoring of linear substrate polishing operations
US6241583B1 (en) 1999-02-04 2001-06-05 Applied Materials, Inc. Chemical mechanical polishing with a plurality of polishing sheets
US6244935B1 (en) 1999-02-04 2001-06-12 Applied Materials, Inc. Apparatus and methods for chemical mechanical polishing with an advanceable polishing sheet
US6585563B1 (en) 1999-02-04 2003-07-01 Applied Materials, Inc. In-situ monitoring of linear substrate polishing operations
US6379231B1 (en) 1999-02-04 2002-04-30 Applied Materials, Inc. Apparatus and methods for chemical mechanical polishing with an advanceable polishing sheet
US6991517B2 (en) 1999-02-04 2006-01-31 Applied Materials Inc. Linear polishing sheet with window
US7303467B2 (en) 1999-02-04 2007-12-04 Applied Materials, Inc. Chemical mechanical polishing apparatus with rotating belt
US7104875B2 (en) 1999-02-04 2006-09-12 Applied Materials, Inc. Chemical mechanical polishing apparatus with rotating belt
US6729944B2 (en) 1999-02-04 2004-05-04 Applied Materials Inc. Chemical mechanical polishing apparatus with rotating belt
US6135859A (en) * 1999-04-30 2000-10-24 Applied Materials, Inc. Chemical mechanical polishing with a polishing sheet and a support sheet
US6626744B1 (en) 1999-12-17 2003-09-30 Applied Materials, Inc. Planarization system with multiple polishing pads
US6729943B2 (en) 2000-01-28 2004-05-04 Lam Research Corporation System and method for controlled polishing and planarization of semiconductor wafers
US6340326B1 (en) 2000-01-28 2002-01-22 Lam Research Corporation System and method for controlled polishing and planarization of semiconductor wafers
US6869337B2 (en) 2000-01-28 2005-03-22 Lam Research Corporation System and method for polishing and planarizing semiconductor wafers using reduced surface area polishing pads and variable partial pad-wafer overlapping techniques
US6705930B2 (en) 2000-01-28 2004-03-16 Lam Research Corporation System and method for polishing and planarizing semiconductor wafers using reduced surface area polishing pads and variable partial pad-wafer overlapping techniques
US6419559B1 (en) 2000-07-10 2002-07-16 Applied Materials, Inc. Using a purge gas in a chemical mechanical polishing apparatus with an incrementally advanceable polishing sheet
US6520841B2 (en) 2000-07-10 2003-02-18 Applied Materials, Inc. Apparatus and methods for chemical mechanical polishing with an incrementally advanceable polishing sheet
US7481695B2 (en) 2000-08-22 2009-01-27 Lam Research Corporation Polishing apparatus and methods having high processing workload for controlling polishing pressure applied by polishing head
US6640155B2 (en) 2000-08-22 2003-10-28 Lam Research Corporation Chemical mechanical polishing apparatus and methods with central control of polishing pressure applied by polishing head
US7008303B2 (en) 2000-08-29 2006-03-07 Applied Materials Inc. Web lift system for chemical mechanical planarization
US6471566B1 (en) 2000-09-18 2002-10-29 Lam Research Corporation Sacrificial retaining ring CMP system and methods for implementing the same
US6652357B1 (en) 2000-09-22 2003-11-25 Lam Research Corporation Methods for controlling retaining ring and wafer head tilt for chemical mechanical polishing
US6443815B1 (en) 2000-09-22 2002-09-03 Lam Research Corporation Apparatus and methods for controlling pad conditioning head tilt for chemical mechanical polishing
US6976903B1 (en) 2000-09-22 2005-12-20 Lam Research Corporation Apparatus for controlling retaining ring and wafer head tilt for chemical mechanical polishing
US7025660B2 (en) 2003-08-15 2006-04-11 Lam Research Corporation Assembly and method for generating a hydrodynamic air bearing

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