WO2001039325A1 - Reflecteur hyperfrequence actif a balayage electronique - Google Patents
Reflecteur hyperfrequence actif a balayage electronique Download PDFInfo
- Publication number
- WO2001039325A1 WO2001039325A1 PCT/FR2000/003286 FR0003286W WO0139325A1 WO 2001039325 A1 WO2001039325 A1 WO 2001039325A1 FR 0003286 W FR0003286 W FR 0003286W WO 0139325 A1 WO0139325 A1 WO 0139325A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- phase
- reflector
- microwave
- cell
- circuit
- Prior art date
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q3/00—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system
- H01Q3/44—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system varying the electric or magnetic characteristics of reflecting, refracting, or diffracting devices associated with the radiating element
- H01Q3/46—Active lenses or reflecting arrays
Definitions
- the present invention relates to an active microwave reflector with electronic scanning, capable of being illuminated by a microwave wave source to form an antenna.
- antennas comprising an active microwave reflector.
- the latter also called “reflect array” in Anglo-Saxon literature, is a network of electronically controllable phase shifters.
- This network extends in a plane and comprises a network of phase control elements, or phase network, disposed in front of reflective means, constituted for example by a metallic ground plane forming a ground plane.
- the reflective grating comprises in particular elementary cells each carrying out the reflection and the phase shift, variable on electronic control, of the microwave wave which it receives.
- a primary source for example a horn, placed in front of the reflective network emits microwave waves towards the latter.
- phase shifts applied by the elementary cells vary discreetly.
- the phase shifts being equally distributed, they are digitally controlled as a function of a number of bits. If we denote by N this number, the phase shift step is then at 2 ⁇ / 2 N.
- the precision of a phase shift is therefore at best equal to a phase shift step.
- the lack of precision leads to certain drawbacks, in particular it leads to the existence of relatively high side lobes and poor pointing accuracy of the antenna.
- the subject of the invention is an active microwave reflector, capable of receiving an electromagnetic wave linearly polarized in a given first direction Oy.
- the reflector according to the invention comprises a set of elementary cells arranged one beside the on the other surface, each cell comprising a phase-shifting microwave circuit and a conductive plane disposed substantially parallel to the microwave circuit, the phase-shifting circuit comprising at least two half-phase-shifters.
- a half-phase shifter has at least one support dielectric, at least two electrically conductive wires substantially parallel to the given direction Oy, disposed on the support and each carrying at least one semiconductor element in two states, each wire being connected to control conductors of the semiconductor elements, these conductors being substantially normal to the wires, and two conductive zones arranged towards the periphery of the cell, substantially parallel to the control conductors.
- the control conductors are at least three in number in each half-phase shifter and are electrically isolated from one half-phase shifter to the other to control the state of all the semiconductor elements independently of one another. .
- the geometric and electrical characteristics of the half-phase shifters are such that to each of the states of the semiconductor elements corresponds a given phase shift value (d ⁇ i, ... d ⁇ ) of the electromagnetic wave which is reflected by the cell.
- the reflector further comprising an electronic control circuit (36) for the state of the semiconductor elements.
- the invention also relates to an antenna provided with such a reflector.
- FIG. 3 a partial sectional view of an example of a reflector according to the invention
- - Figure 4 a first embodiment of an elementary cell of a reflector according to the invention
- FIG. 8 another embodiment of a reflector according to the invention comprising a grid disposed on its front face.
- FIG. 1 schematically illustrates an exemplary embodiment of an electronic scanning antenna with an active reflective array in which the microwave distribution is for example of the so-called optical type, that is to say for example ensured using a primary source illuminating the reflective network.
- the antenna comprises a primary source 1, for example a horn.
- the primary source 1 emits microwave waves 3 towards the active reflecting network 4, arranged in the Oxy plane.
- This reflective network 4 comprises a set of elementary cells performing the reflection and the phase shift of the waves they receive.
- the reflector can be illuminated by more than one source. It can in particular be illuminated by two elementary sources, for example having reverse circular polarizations.
- FIG. 2 schematically shows a part of a reflector network 4 in the Oxy plane, by a top view, along F.
- the reflector comprises a set of elementary cells 10 arranged side by side and separated by zones 20, used for microwave decoupling cells. These cells 10 carry out the reflection and the phase shift of the waves they receive.
- An elementary cell 10 comprises a phase-shifting microwave circuit disposed in front of a conducting plane. More precisely, as will appear later, the microwave circuit has two transverse phase shifters, each dedicated to linear polarization.
- FIG 3 is a schematic sectional view, in the Oxz plane of a possible embodiment of the active reflector 4.
- the reflector 4 consists of a microwave circuit 31 distributed in the elementary cells 10 and a conductive plane 32 , arranged substantially parallel to the microwave circuit 31, at a predefined distance d. This microwave circuit receives the incident waves emitted by the primary source 1.
- the function of the conducting plane 32 is in particular to reflect the microwave waves. It can be formed by any known means, for example parallel wires or a mesh, sufficiently tight, or a continuous plane.
- the microwave circuit 31 and the conducting plane 32 are preferably produced on two faces of a dielectric support 33, for example of the printed circuit type.
- the reflector 4 also comprises, preferably on the same printed circuit 33, which is then a multilayer circuit, the electronic circuit necessary for controlling the phase values.
- Figure 3 there is shown a multilayer circuit whose front face 34 carries the microwave circuit 31, the rear face 35 carries components 36 of the aforementioned electronic control circuit, and the intermediate layers form the conductive plane 32 and for example two component interconnection planes 36 to the microwave circuit 31.
- FIG. 4 shows a top view of a possible embodiment of the microwave circuit 31 of a reflector according to the invention. More particularly, FIG. 4 illustrates an elementary phase shifter 31 of the microwave circuit. Each phase shifter is separated from another phase shifter by a decoupling zone 20 comprising for example a conductive strip 48 parallel to the direction Oy and a conductive strip 49 parallel to the direction Ox. It therefore has for example at its periphery two conductive strips 48 in the direction Oy and two conductive strips in the direction Ox.
- Each elementary phase shifter 31, associated with the corresponding part of the conducting plane 32 forms an elementary cell 10 in FIG. 2.
- the microwave circuit of a phase shifter 31 comprises several conductive wires 42 substantially parallel to the direction Oy and each carrying a semiconductor element with two states D1, D2, for example a diode.
- the phase shifting circuit also includes conductive zones connecting the diodes to reference potentials and control circuits. More particularly, an elementary phase shifter 31 is made up of two circuits 50 hereinafter called half-phase shifter. We therefore first describe a half-phase shifter.
- a half-phase shifter 50 comprises a dielectric support 33, two wires 42 each carrying a diode D1, D2.
- the two wires are connected to the ground potential, or to any other reference potential, via a conductive line 43.
- This line 43 is for example of the microstrip type produced by metallic deposition on the front face of the dielectric support 33 , for example by a screen printing technique.
- the diodes D1 and D2 are thus wired in opposition so that for example their anodes are connected to the ground potential by this line 43. To this end, the latter is for example connected to a conductive strip 48 of the decoupling means 20.
- the supply voltage of the diodes D1 and D2 is brought by control conductors 44.
- the anode of the diodes being connected to ground potential, the control conductors are then connected to the cathode of the diodes.
- the supply voltage supplied by these conductors is for example of the order of -15 volts.
- the control conductors are controlled so as to have at least two voltage states. In a first state, their voltage is for example at the supply voltage, which makes the diode on, or in other words forward biased. In a second state, their voltage is such that the diode is blocked, or in other words reverse biased.
- the controls of the two control conductors 44, 45 are independent of one another so as to control the diodes independently of one another.
- control conductors 44, 45 and the mass-connected conductor 43 are substantially parallel to the direction Ox and therefore perpendicular to the wires 42.
- the mass conductor is common to the two wires, in particular for space savings and material, one could however provide a specific conductor for each wire. We could also plan to not directly connect these conductors directly to a reference potential but via a control circuit.
- the control conductors 44, 45 are connected to the electronic control circuit carried by the reflector, by means of metallized holes 46 produced for example at the level of the decoupling zone 20, in particular for reasons of space, but also for not to disturb the functioning of the elementary cells.
- the metallized holes 46 are of course electrically isolated from the conductive strips of the decoupling zone. To this end, an interruption of the strip 20 is provided around the ends of the control conductors directly connected to the metallized holes 46.
- the equivalent circuit relates to the conducting wires 42 and the two diodes D1, D2, in fact what corresponds to a half-phase shifter, associated with a given polarization and therefore with a given frequency band.
- the incident microwave wave, of linear polarization and parallel to Oy and to wires 42 is received on terminals B- t and B 2 and meets three capacitors Co, Cn, C ⁇ 2 in series, connected in parallel on terminals Bi and B 2 .
- the capacitance C 0 represents the linear decoupling capacity between the control conductors 44 and the conductive strip of the decoupling zone 20.
- the capacitance Cn is the linear capacitance between the control conductor 44 connected to the first diode D1 and the conductor of mass 43.
- 2 is the linear capacitance between the control conductor 45 connected to the second diode D2 and the central conductor 43.
- the first diode D1 At the limit of capacity C
- the latter consists of an inductance L ⁇
- Z is the impedance of the incident wave and ⁇ is the pulse corresponding to the center frequency of one of the two operating bands of the antenna.
- a half-phase shifter can have four different values for its susceptance BD > these values being denoted Bp-i, BD2> BQ3 and BD4. according to the command (direct or reverse polarization) applied to each of the diodes D1, D2.
- the values of the susceptances BQI, BD2 > BD3 and BQ4 are a function of the parameters of the circuit of FIG. 5, that is to say of the values chosen for the geometric parameters, in particular with regard to the dimensions, shapes and spacings of the different conductive 43, 44, 45 and electrical surfaces of the phase shifter, in particular as regards the electrical characteristics of the diodes.
- the susceptance BQ can take four distinct values (denoted Bç; ⁇ , Bc2> ⁇ C3 • and BC4 .
- the distance d representing an additional parameter for determining the values Bç; ⁇ - Bc4-
- phase shift d ⁇ printed by an admittance Y to a microwave wave is of the form:
- the parameters of the circuit are chosen so that the zero (or substantially zero) susceptances are such that they correspond to the diodes polarized in the direct direction, but that can of course choose a symmetrical operation in which the parameters are determined to substantially cancel the susceptances B r ; more generally, it is not necessary that one of the susceptances Bd or B r be zero, these values being determined so that the condition of equal distribution of the phase shifts d ⁇ -dq> 4 is fulfilled.
- FIG. 6 presents an equivalent diagram of the entire phase shifter made up of the two half-phase shifters as previously described. It can be considered that the equivalent diagrams of the two half-phase shifters 50 as shown in FIG. 5 operate in parallel.
- the capacitive connections between the control conductors 44 of the diodes D1 and between the control conductors 45 of the diodes D2 can be likened to microwave short-circuits.
- the susceptances are added.
- phase shifter The geometric and electrical parameters of the phase shifter are for example defined to obtain eight equally spaced phase shifts between 0 ° and 360 °.
- susceptance values B c and therefore susceptance values BD are defined according to relations (3) and (4), the distance d being known.
- the geometric and electrical parameters of the phase shifter can then be obtained by conventional simulation means.
- FIG. 4 shows that the conductive surfaces 44, 45, 43 have particular shapes.
- the control conductors 44, 45 notably have crenellated surfaces.
- phase shifter as illustrated in FIG. 4 is simple to implement, it in fact makes it possible to obtain eight phase shifts by simply playing on geometric parameters of conductors and on the choice of diodes.
- the printed circuit supporting the microwave circuits and the electronic control circuits is also not very thick. Such a circuit can be obtained economically and the reflector can therefore be extremely flat, and therefore light in weight.
- an active reflector comprises decoupling means 20 between the cells 10.
- the microwave wave received by the cells is linearly polarized, parallel to the direction Oy. It is desirable that this wave does not does not spread from one cell to another, in the direction Ox.
- the decoupling means comprise at least the conductive zone 48. Provision is therefore made for this conductive zone 48 to be substantially in the form of a strip, produced by metallic deposition on the surface 34 for example, between the cells, parallel to the direction Oy. This strip 48 forms, with the reflective plane 32 which is below, a space of the waveguide type whose width is the distance d.
- the distance d is chosen so that it is less than ⁇ / 2, ⁇ being the length of the microwave, knowing that a wave whose polarization is parallel to the bands cannot propagate in such a space.
- the reflector according to the invention operates in a certain frequency band and d is chosen so that it is less than the smallest of the wavelengths of the band.
- the strip 48 must have a width, in the direction Ox, sufficient for the effect described above to be appreciable.
- the width can be of the order of ⁇ / 5.
- it can be parasitically created in a cell, a wave whose polarization would be directed in the direction Oz, perpendicular to the plane formed by the directions Ox and Oy. It is also desirable to avoid its propagation towards the neighboring cells .
- the metallized holes 46 for connection control conductors are used as shown in FIG. 4 to electronic circuits. Indeed, these being parallel to the polarization of the stray wave, they are equivalent to a conductive plane forming shielding if they are sufficiently close (at a distance from each other much less than the length of operating wave of the reflector), therefore numerous, for the operating wavelengths of the reflector. If this condition is not fulfilled, additional metallized holes can be formed, having no connection function. It should be noted that the metallized connection holes 46 are preferably made at the level of the strips 48 so as not to disturb the operation of the cells. This arrangement also provides a gain in size.
- metallized holes 40 similar to the connection holes 46 but aligned in the direction Ox opening into the conductive strip 49.
- These metallized holes 40 like the metallized connection holes 46 are produced in a direction Oz substantially perpendicular to the plane Oxy. It is also possible, for example, to provide a continuous conductive surface in the xOz plane.
- FIG. 7 illustrates a phase shifter according to the invention making it possible to control the phase shifts on 4 bits, therefore on an additional bit with respect to the phase shifter illustrated in FIG. 4.
- the phase shifter always comprises two half-phase shifters 50 produced as described above. However, the two half-phase shifters are no longer separated by a line 47 isolating the diode controls, but by two conductive zones 71, 72 connected by a diode D3, or any other semiconductor with two states. These two zones 71, 72 are for example produced by metallic deposition on the front face 34 of the dielectric. These zones form control conductors of the diode D3. To this end, a conductive area 71 is for example connected to the electronic control circuits by a metallized hole 46.
- this area 71 is at a supply potential, for example -15 volts or to another potential, for example the mass potential.
- the other conductive area 72 is for example connected to the ground potential. To this end, it is for example connected to the conductive strip 48 parallel to the direction Oy of the decoupling means 20.
- the phase shifter is similar to that of FIG. 4, it presents in this eight phase shifts possible. It is of course necessary to redefine its geometric and electrical parameters due to the introduction of the additional zones 71, 72.
- the electrical parameters of the phase shifter are modified compared to the previous state.
- the capacitance formed by the space between the two conductive zones 71, 72 becomes short-circuited by the diodes D3.
- the eight possible susceptances of the previous state, controlled on three bits, are then modified by the switching on of the diode D3.
- the eight new susceptances thus obtained make it possible to obtain eight additional phase shifts. A total of sixteen phase shifts are therefore possible.
- the geometric and electrical characteristics of the two half-phase shifters 50 but also of the additional conductive areas 71, 72 and of their diode D3 must be defined so as to obtain the sixteen phase shifts desired for each of the states of the diodes.
- FIG. 8 illustrates a possible alternative embodiment of a reflector according to the invention, the elementary cells 10 being for example of the type of that presented in FIGS. 4 or 7.
- a metal grid is placed on the front face of the reflector, that is to say the face which is opposite the microwave source 1.
- This grid is formed of meshes 81 each having the surface of an elementary cell, more particularly the base of a mesh surrounds a cell.
- the grid also has a thickness ⁇ G-
- FIG. 8 shows in perspective a single elementary cell.
- the grid is formed of meshes whose walls 82 extend in the direction Oz, substantially opposite the conductive strips 48, 49 of the decoupling means 20.
- the base of the grid is in contact with these strips 48, 49 and in particular with the metallized holes 40, 46 which they comprise.
- the thickness e G of the grid which in fact corresponds to the length of the walls 82 is for example of the order of a centimeter, preferably of the order of half a centimeter. The relatively small thickness of the grid therefore makes it possible to keep a very flat reflector, and therefore of low weight.
- This metal grid makes it possible to decouple the phase shift function from the radiation function, and makes it possible to control the active coupling coefficients by making them independent of the pointing law of the antenna and thus makes it possible to cancel the parasitic radiation lobes such than the image lobe and the magic lobes. Furthermore, the metal grid, which is in particular in contact with the metallized holes, allows better heat exchange between the circuits of the reflector and the exterior thanks to a larger exchange surface. The reliability of the reflector is therefore increased.
- An active reflector array according to the invention can be used for many types of antennas. It can in particular be used for space communication antennas thanks to its low weight or even be used for weather radar antennas thanks to its low cost. Finally, it can be used for all types of antenna with reflector applications requiring good pointing accuracy and a low level of secondary lobes.
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- Aerials With Secondary Devices (AREA)
- Variable-Direction Aerials And Aerial Arrays (AREA)
- Radar Systems Or Details Thereof (AREA)
- Optical Radar Systems And Details Thereof (AREA)
Abstract
Description
Claims
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001540887A JP2004508738A (ja) | 1999-11-26 | 2000-11-24 | 電子スキャニングを有する動的マイクロ波リフレクタ |
EP00988873A EP1234356B1 (fr) | 1999-11-26 | 2000-11-24 | Reflecteur hyperfrequence actif a balayage electronique |
DE60033173T DE60033173T2 (de) | 1999-11-26 | 2000-11-24 | Aktiver hf reflektor unter verwendung von elektronischer strahlschwenkung |
AU25225/01A AU2522501A (en) | 1999-11-26 | 2000-11-24 | Active electronic scan microwave reflector |
US10/130,276 US6670928B1 (en) | 1999-11-26 | 2000-11-24 | Active electronic scan microwave reflector |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9914933A FR2801729B1 (fr) | 1999-11-26 | 1999-11-26 | Reflecteur hyperfrequence actif a balayage electronique |
FR99/14933 | 1999-11-26 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2001039325A1 true WO2001039325A1 (fr) | 2001-05-31 |
Family
ID=9552596
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/FR2000/003286 WO2001039325A1 (fr) | 1999-11-26 | 2000-11-24 | Reflecteur hyperfrequence actif a balayage electronique |
Country Status (8)
Country | Link |
---|---|
US (1) | US6670928B1 (fr) |
EP (1) | EP1234356B1 (fr) |
JP (1) | JP2004508738A (fr) |
AT (1) | ATE352883T1 (fr) |
AU (1) | AU2522501A (fr) |
DE (1) | DE60033173T2 (fr) |
FR (1) | FR2801729B1 (fr) |
WO (1) | WO2001039325A1 (fr) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004505582A (ja) * | 2000-07-28 | 2004-02-19 | タレス | 特に電子走査アンテナ用の二重偏波能動マイクロ波反射器 |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6900710B2 (en) * | 2001-04-10 | 2005-05-31 | Picosecond Pulse Labs | Ultrafast sampler with non-parallel shockline |
US7084716B2 (en) * | 2001-04-10 | 2006-08-01 | Picosecond Pulse Labs | Ultrafast sampler with coaxial transition |
FR2834131B1 (fr) * | 2001-12-21 | 2005-06-17 | Thales Sa | Panneau dephaseur monolithique a diodes pin en silicium polycristallin et antenne utilisant ce panneau dephaseur |
US7358834B1 (en) * | 2002-08-29 | 2008-04-15 | Picosecond Pulse Labs | Transmission line voltage controlled nonlinear signal processors |
FR2847718B1 (fr) * | 2002-11-22 | 2005-08-05 | Thales Sa | Diodes pin en materiaux polycristallins a heterostructures, panneau dephaseur et antenne comportant les diodes pin |
FR2879359B1 (fr) * | 2004-12-15 | 2007-02-09 | Thales Sa | Antenne a balayage electronique large bande |
US7106265B2 (en) * | 2004-12-20 | 2006-09-12 | Raytheon Company | Transverse device array radiator ESA |
US7612629B2 (en) * | 2006-05-26 | 2009-11-03 | Picosecond Pulse Labs | Biased nonlinear transmission line comb generators |
US7345610B2 (en) * | 2006-06-12 | 2008-03-18 | Wisconsin Alumni Research Foundation | High speed digital-to-analog converter |
FR2907262B1 (fr) * | 2006-10-13 | 2009-10-16 | Thales Sa | Cellule dephaseuse a dephaseur analogique pour antenne de type"reflectarray". |
US8044866B2 (en) * | 2007-11-06 | 2011-10-25 | The Boeing Company | Optically reconfigurable radio frequency antennas |
JP4990310B2 (ja) * | 2009-02-27 | 2012-08-01 | 日本放送協会 | アンテナ装置 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2708808A1 (fr) * | 1993-08-06 | 1995-02-10 | Thomson Csf Radant | Panneau déphaseur à quatre états de phase et son application à une lentille hyperfréquence et à une antenne à balayage électronique. |
US5598172A (en) * | 1990-11-06 | 1997-01-28 | Thomson - Csf Radant | Dual-polarization microwave lens and its application to a phased-array antenna |
FR2747842A1 (fr) * | 1990-06-15 | 1997-10-24 | Thomson Csf Radant | Lentille hyperfrequence multibande et son application a une antenne a balayage electronique |
FR2786610A1 (fr) * | 1997-02-03 | 2000-06-02 | Thomson Csf | Reflecteur hyperfrequence actif pour antenne a balayage electronique |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2395620A1 (fr) * | 1977-06-24 | 1979-01-19 | Radant Etudes | Perfectionnement au procede de balayage electronique utilisant des panneaux dielectriques dephaseurs |
FR2412960A1 (fr) * | 1977-12-20 | 1979-07-20 | Radant Etudes | Dephaseur hyperfrequence et son application au balayage electronique |
FR2448231A1 (fr) * | 1979-02-05 | 1980-08-29 | Radant Et | Filtre spatial adaptatif hyperfrequence |
JP2692261B2 (ja) * | 1989-05-12 | 1997-12-17 | 日本電気株式会社 | アンテナ装置 |
FR2656468B1 (fr) * | 1989-12-26 | 1993-12-24 | Thomson Csf Radant | Source de rayonnement microonde magique et son application a une antenne a balayage electronique. |
US6091371A (en) * | 1997-10-03 | 2000-07-18 | Motorola, Inc. | Electronic scanning reflector antenna and method for using same |
-
1999
- 1999-11-26 FR FR9914933A patent/FR2801729B1/fr not_active Expired - Fee Related
-
2000
- 2000-11-24 US US10/130,276 patent/US6670928B1/en not_active Expired - Lifetime
- 2000-11-24 JP JP2001540887A patent/JP2004508738A/ja not_active Ceased
- 2000-11-24 AT AT00988873T patent/ATE352883T1/de not_active IP Right Cessation
- 2000-11-24 DE DE60033173T patent/DE60033173T2/de not_active Expired - Lifetime
- 2000-11-24 AU AU25225/01A patent/AU2522501A/en not_active Abandoned
- 2000-11-24 WO PCT/FR2000/003286 patent/WO2001039325A1/fr active Search and Examination
- 2000-11-24 EP EP00988873A patent/EP1234356B1/fr not_active Expired - Lifetime
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2747842A1 (fr) * | 1990-06-15 | 1997-10-24 | Thomson Csf Radant | Lentille hyperfrequence multibande et son application a une antenne a balayage electronique |
US5598172A (en) * | 1990-11-06 | 1997-01-28 | Thomson - Csf Radant | Dual-polarization microwave lens and its application to a phased-array antenna |
FR2708808A1 (fr) * | 1993-08-06 | 1995-02-10 | Thomson Csf Radant | Panneau déphaseur à quatre états de phase et son application à une lentille hyperfréquence et à une antenne à balayage électronique. |
FR2786610A1 (fr) * | 1997-02-03 | 2000-06-02 | Thomson Csf | Reflecteur hyperfrequence actif pour antenne a balayage electronique |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004505582A (ja) * | 2000-07-28 | 2004-02-19 | タレス | 特に電子走査アンテナ用の二重偏波能動マイクロ波反射器 |
Also Published As
Publication number | Publication date |
---|---|
EP1234356B1 (fr) | 2007-01-24 |
FR2801729B1 (fr) | 2007-02-09 |
US6670928B1 (en) | 2003-12-30 |
JP2004508738A (ja) | 2004-03-18 |
DE60033173D1 (de) | 2007-03-15 |
DE60033173T2 (de) | 2007-11-08 |
ATE352883T1 (de) | 2007-02-15 |
EP1234356A1 (fr) | 2002-08-28 |
AU2522501A (en) | 2001-06-04 |
FR2801729A1 (fr) | 2001-06-01 |
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