WO2001037327A1 - Pendeoepitaxial growth of gallium nitride layers on sapphire substrates - Google Patents
Pendeoepitaxial growth of gallium nitride layers on sapphire substrates Download PDFInfo
- Publication number
- WO2001037327A1 WO2001037327A1 PCT/US2000/027354 US0027354W WO0137327A1 WO 2001037327 A1 WO2001037327 A1 WO 2001037327A1 US 0027354 W US0027354 W US 0027354W WO 0137327 A1 WO0137327 A1 WO 0137327A1
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- Prior art keywords
- gallium nitride
- layer
- trench
- post
- sapphire
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/0242—Crystalline insulating materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02458—Nitrides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
- H01L21/02639—Preparation of substrate for selective deposition
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
- H01L21/02639—Preparation of substrate for selective deposition
- H01L21/02642—Mask materials other than SiO2 or SiN
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
- H01L21/02647—Lateral overgrowth
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
- H01L21/02647—Lateral overgrowth
- H01L21/0265—Pendeoepitaxy
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2304/00—Special growth methods for semiconductor lasers
- H01S2304/12—Pendeo epitaxial lateral overgrowth [ELOG], e.g. for growing GaN based blue laser diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
- H01S5/0213—Sapphire, quartz or diamond based substrates
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Led Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Recrystallisation Techniques (AREA)
- Semiconductor Lasers (AREA)
Abstract
Description
Claims
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AT00970569T ATE537555T1 (en) | 1999-11-17 | 2000-10-04 | PENDEOEPITACTIC GROWTH OF GALLIUM NITRIDE LAYERS ON SAPPHIRE SUBSTRATES |
EP00970569A EP1232520B1 (en) | 1999-11-17 | 2000-10-04 | Pendeoepitaxial growth of gallium nitride layers on sapphire substrates |
AU79929/00A AU7992900A (en) | 1999-11-17 | 2000-10-04 | Pendeoepitaxial growth of gallium nitride layers on sapphire substrates |
CA002392041A CA2392041C (en) | 1999-11-17 | 2000-10-04 | Pendeoepitaxial growth of gallium nitride layers on sapphire substrates |
JP2001537783A JP4017140B2 (en) | 1999-11-17 | 2000-10-04 | Method for manufacturing gallium nitride semiconductor layer |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/441,753 | 1999-11-17 | ||
US09/441,753 US6521514B1 (en) | 1999-11-17 | 1999-11-17 | Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2001037327A1 true WO2001037327A1 (en) | 2001-05-25 |
Family
ID=23754137
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2000/027354 WO2001037327A1 (en) | 1999-11-17 | 2000-10-04 | Pendeoepitaxial growth of gallium nitride layers on sapphire substrates |
Country Status (9)
Country | Link |
---|---|
US (5) | US6521514B1 (en) |
EP (2) | EP1232520B1 (en) |
JP (3) | JP4017140B2 (en) |
KR (1) | KR100810192B1 (en) |
CN (1) | CN100364051C (en) |
AT (1) | ATE537555T1 (en) |
AU (1) | AU7992900A (en) |
CA (1) | CA2392041C (en) |
WO (1) | WO2001037327A1 (en) |
Cited By (9)
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US6611002B2 (en) | 2001-02-23 | 2003-08-26 | Nitronex Corporation | Gallium nitride material devices and methods including backside vias |
US6617060B2 (en) | 2000-12-14 | 2003-09-09 | Nitronex Corporation | Gallium nitride materials and methods |
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US6956250B2 (en) | 2001-02-23 | 2005-10-18 | Nitronex Corporation | Gallium nitride materials including thermally conductive regions |
US7233028B2 (en) | 2001-02-23 | 2007-06-19 | Nitronex Corporation | Gallium nitride material devices and methods of forming the same |
US7361576B2 (en) | 2005-05-31 | 2008-04-22 | The Regents Of The University Of California | Defect reduction of non-polar and semi-polar III-Nitrides with sidewall lateral epitaxial overgrowth (SLEO) |
US7655090B2 (en) | 2000-08-04 | 2010-02-02 | The Regents Of The University Of California | Method of controlling stress in gallium nitride films deposited on substrates |
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ATE550461T1 (en) * | 1997-04-11 | 2012-04-15 | Nichia Corp | GROWTH METHOD FOR A NITRIDE SEMICONDUCTOR |
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US20010008791A1 (en) | 2001-07-19 |
KR20020067520A (en) | 2002-08-22 |
US20010041427A1 (en) | 2001-11-15 |
EP1232520B1 (en) | 2011-12-14 |
JP4410972B2 (en) | 2010-02-10 |
US20030207551A1 (en) | 2003-11-06 |
JP2002343729A (en) | 2002-11-29 |
CN1409868A (en) | 2003-04-09 |
JP4223219B2 (en) | 2009-02-12 |
JP2003514392A (en) | 2003-04-15 |
CA2392041A1 (en) | 2001-05-25 |
CN100364051C (en) | 2008-01-23 |
CA2392041C (en) | 2007-05-29 |
AU7992900A (en) | 2001-05-30 |
US6521514B1 (en) | 2003-02-18 |
EP2302665A1 (en) | 2011-03-30 |
KR100810192B1 (en) | 2008-03-06 |
US6489221B2 (en) | 2002-12-03 |
US6686261B2 (en) | 2004-02-03 |
ATE537555T1 (en) | 2011-12-15 |
US7217641B2 (en) | 2007-05-15 |
EP1232520A1 (en) | 2002-08-21 |
JP4017140B2 (en) | 2007-12-05 |
US6545300B2 (en) | 2003-04-08 |
JP2002334845A (en) | 2002-11-22 |
US20040152321A1 (en) | 2004-08-05 |
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