WO2001036181A1

WO2001036181A1 - Method of dry-etching resin film and device therefor

Info

Publication number: WO2001036181A1
Application number: PCT/JP2000/007995
Authority: WO
Inventors: Ryomyo Hamanaka; Yoshimasa Nakano; Tatsuya Takeuchi; Shinsuke Fukumoto
Original assignee: Toray Engineering Company, Limited; Shinko Seiki Co., Ltd.
Priority date: 1999-11-15
Filing date: 2000-11-13
Publication date: 2001-05-25
Also published as: TW479446B; JP4536309B2

Abstract

Either one of laminate materials formed by laminating metal foils on a resin film element material and a resin film is used as an untreated material (F), a heating table (3) is brought into close contact with one-side surface and an etching opening pattern-formed mask (4) is brought into close contact with the opposite-side surface so as to sandwich the untreated material (F) therebetween, and the untreated material is gas-etched from the mask (4) side under a vacuum atmosphere with the close contact conditions maintained.

Description

Technical Field Dry etching method and apparatus for resin film

The present invention relates to a method and an apparatus for dry etching of a resin film, and more particularly to a method and an apparatus for gas etching the surface of a resin film used for an FPC (Flexible Printed Circuit) substrate or the like.

Background art

As is well known, as information communication devices become smaller and lighter, IC chip substrates are becoming thinner and more multilayered, and resin films are increasingly being used for FPC board materials, especially for thinner multilayers. . Among the resin films used for the substrate material, polyimide film in particular has chemical properties (chemical resistance), thermal properties (thermoplasticity, heat resistance), and electrical properties (dielectric constant, insulation resistance). Rate), physical properties (water absorption, dimensional stability, coefficient of thermal expansion) and mechanical properties (tensile strength, bending strength) are widely used. In recent years, resin films such as liquid crystalline polyester polyphenylene sulfide (PPS) having excellent water absorption and swelling resistance have been used. Such a resin film for an FPC board may be used as a resin film alone or as a laminated material obtained by laminating a metal foil on a resin film. In each case, via holes (through holes) or blind holes (non-through holes) are formed in the resin film. Conventionally, many mechanical, physical or chemical perforation methods have been proposed as perforation methods for such resin films. However, in either method, even if only a via hole can be drilled, or if both a via hole and a blind hole can be drilled, it is not possible to drill quickly and accurately. In addition, there was a limitation that it could only pierce a specific type of resin film, and it lacked versatility.

Further, in the case of the drilling method using gas etching, it is difficult to control the stop of the drilling operation, and there is a problem that the drilling accuracy is reduced due to the inappropriate stop control. In addition, in the case of plasma etching, the reactive gas species (radicals) supplied to the perforation recombine due to the catalytic action of the apparatus itself, so that there is a disadvantage that the perforation speed is reduced. Disclosure of the invention

A first object of the present invention is to provide a highly versatile resin film that can be quickly and accurately drilled regardless of whether the hole to be drilled is a through hole or the type of resin film. A second object of the present invention is to provide a method and an apparatus for dry etching of a resin film which can easily and accurately control the stop of perforation.

A third object of the present invention is to provide a dry etching apparatus for a resin film, which prevents a reduction in perforation rate due to recombination of reactive active gas species of an etching gas.

The present invention provides the following three dry etching methods for a resin film in order to achieve the first object.

In the first method, either a resin film alone or a laminated material obtained by laminating a metal foil on a resin film is used as a material to be treated, and a heating table is closely attached to one surface so as to sandwich the material to be treated, A mask having an opening pattern for etching formed on the opposite surface is closely contacted, and the material to be processed is gas-etched from the mask side in a vacuum atmosphere while maintaining the close contact state.

In a second method, a resin film simple substance is used as a material to be treated, and the material to be treated is A different resin film that generates a different kind of gas from the material to be treated is superposed, a heating table is brought into close contact with the surface of the different resin film, and an opening pattern for etching is formed on the surface of the material to be treated. The formed mask is brought into close contact, and the material to be treated is gas-etched from the mask side in a vacuum atmosphere while maintaining the close contact state.

In a third method, a laminated material in which a metal foil having an opening pattern for etching formed on one side of a resin film is laminated is a material to be treated, and a heating table is provided on the surface of the material to be treated on the resin film side. The metal foil side of the material to be treated is subjected to gas etching in a vacuum atmosphere while maintaining the close contact state.

In addition, the present invention provides the following three types of resin film drying and etching apparatuses to achieve the first object.

The first apparatus includes: a processing chamber that enables the inside to be evacuated; an etching gas supply unit installed in the processing chamber; and an etching opening pattern mounted to cover a gas outlet of the etching gas supply unit. And a heating table movably installed inside the processing chamber, wherein the heating table is in close contact with one surface of a material to be processed mainly composed of a resin film, and the mask is It is characterized by a dry etching device for resin film, which is in close contact with the opposite side of the material to be treated.

The second apparatus includes: a processing chamber that enables the inside to be vacuumed; an etching gas supply unit installed inside the processing chamber; and an etching opening pattern mounted to cover a gas outlet of the etching gas supply unit. And a heating table movably installed inside the processing chamber, and a resin film as a material to be processed and a different resin film that generates a different gas from the resin film as a single material. The heating table is in close contact with the dissimilar resin film, and the mask is It is characterized by a resin film dry-etching device that is in close contact.

The third apparatus includes a processing chamber that allows the inside to be evacuated, an etching gas supply unit that is installed inside the processing chamber, and a heating table that is movably installed inside the processing chamber. A laminated material obtained by laminating a metal foil having an opening pattern for etching formed on one side of a film is used as a material to be treated, and the heating table is brought into close contact with the resin film side of the material to be treated. A resin film dry etching apparatus characterized in that a side thereof faces a gas outlet of the etching gas supply section.

In each of the first to third methods and apparatuses described above, the resin film of the material to be processed is gas-etched in a vacuum atmosphere. In the first and second methods and apparatuses, the heating table is brought into close contact with one side of the material to be processed, whereby the mask on the opposite side is brought into close contact with the resin film of the material to be processed, and the mask side is etched. I do. The third method and apparatus use a laminated material in which a metal foil having an opening pattern for etching is laminated as a material to be processed, and a heating table is brought into close contact with the resin film side of the laminated material. Gas etching is performed by tensioning the side covered with the metal foil.

Therefore, in any of the methods, gas etching is performed through an opening pattern provided in a mask or a metal foil in a state where a resin film of a material to be processed is heated and tensioned, so that high-precision and quick drilling can be performed. it can. Further, regardless of whether the hole is a through hole or the type of resin film, it is possible to perform high-accuracy and quick drilling.

Regarding the second object, in the first method and apparatus, the amount of reaction product gas released from the etching opening in the mask, and in the third method and apparatus, from the etching opening in the metal foil, respectively. Gas etching is stopped, and gas etching is stopped when the detected amount decreases sharply. That is, drilling of material to be treated When the etching is completed, the amount of the reaction product gas is drastically reduced. Therefore, if the timing of this drastic decrease is detected, the etching operation can be stopped at an appropriate time. In the second method and apparatus, the composition of the reaction product gas released from the etching opening of the mask is detected, and the gas etching is stopped when the type of the composition changes drastically. Since the composition of the reaction product gas changes drastically between the completion of the perforation of the resin film to be treated and the start of the perforation of the different kind of resin film, the gas etching operation can be appropriately stopped by detecting the time of this drastic change.

Regarding the third object, in the first and second devices, the components of the device such as the mask are made of a material that is non-catalytic with respect to the reactive active gas species of the etching gas flowing out of the plasma generation chamber. Therefore, it is possible to prevent a reduction in the drilling speed due to the recombination of the reactive active gas species. BRIEF DESCRIPTION OF THE FIGURES

1 (A) and 1 (B) show an apparatus for implementing the first method of the present invention, (A) is a longitudinal sectional view before the start of the etching process, and (B) is a state during the etching process. FIG.

FIG. 2 is an enlarged vertical section showing a main part of the apparatus of FIG.

FIG. 3 is a plan view showing a manner of attaching a mask in the apparatus of FIG. FIG. 4 is a longitudinal sectional view of an apparatus according to another embodiment for performing the first method of the present invention.

FIGS. 5A and 5B show a main part of an apparatus according to still another embodiment for carrying out the first method of the present invention. FIG. 5A is a longitudinal sectional view showing a state before an etching process is started. (B) is a longitudinal sectional view of the state during the etching process.

FIG. 6 is a longitudinal sectional view of an apparatus according to still another embodiment for performing the first method of the present invention.

FIG. 7 shows a portion to be gas-etched by the method of the present invention; Is a vertical sectional view of an initial state after the start of etching, (B) is a middle state, and (C) is a terminal state.

FIG. 8 is a longitudinal sectional view showing an apparatus for performing the second method of the present invention. FIG. 9 is a longitudinal sectional view showing another embodiment of the apparatus for performing the second method of the present invention.

FIG. 10 shows gas etching locations in an apparatus for performing the second method of the present invention. (A) is the initial state after the start of etching, (B) is the final state, and (C) is the material to be processed. It is a longitudinal cross-sectional view which shows the state in which different kinds of resin films are etched, respectively.

FIG. 11 is an explanatory diagram showing a peak formation mode of a reaction product gas in an apparatus for performing the second method of the present invention.

FIG. 12 is an explanatory diagram showing a peak formation mode of a reaction product gas in an apparatus for performing the first method of the present invention.

FIG. 13 is a longitudinal sectional view showing an apparatus for performing the third method of the present invention. FIG. 14 is a longitudinal sectional view showing another embodiment of the apparatus for performing the third method of the present invention.

FIG. 15 is a graph showing the etching speed when the materials of the mask, the heating table, and the gas diffusion plate of the etching apparatus according to the present invention are different. BEST MODE FOR CARRYING OUT THE INVENTION

In the present invention, the resin film as the material to be subjected to the gas etching may be a resin film alone or a laminated material obtained by laminating a metal foil on a resin film. The material to be treated according to the third invention of the present invention is the above-mentioned laminated material, but a laminated material having an opening pattern for etching provided on the metal foil is used. The material of the metal foil laminated on the laminated material is not particularly limited, and copper is generally used. Resin fill The system is not particularly limited, and any can be targeted. For example, resin films for FPC boards are often polyimide films. In addition, liquid crystal polyester films, polyphenylene sulfide films, etc. can also be used.

In the first method and the second method of the present invention, a heating table is brought into close contact with one side of a material to be processed, a mask having an opening pattern for etching is brought into close contact with a resin film on the opposite side, and the mask side is placed in contact with the mask. Perform gas etching. The heating table is brought into close contact with one side of the material to be processed in order to keep the mask on the opposite side in good contact with the resin film and to heat the resin film. By maintaining the mask in good contact with the resin film, the etching gas can be evenly dispersed in the mask opening pattern, and the perforation accuracy can be improved. Also, by heating the resin film, the etching rate is increased, enabling rapid drilling.

In the third method of the present invention, a heating table is brought into close contact with the resin film side of the laminate, and gas etching is performed on the metal foil side provided with the etching opening pattern. The reason why the heating table is brought into close contact with the resin film side of the laminated material is to heat the resin film by the heating table. This heating increases the etching rate and enables rapid drilling. Further, since the etching opening pattern is formed in the metal foil, highly accurate etching can be performed without using a mask. That is, by the laminate forming an etched opening pattern in the metal foil and the material to be treated, since the metal foil has a mask function equivalent, _c heating use of the mask is to be omitted The heating temperature of the table depends on the type of the resin film, but is preferably in the range of 150 ° C. to 350 ° C. With such a heating temperature, high-speed etching can be performed without melting or deforming the resin film.o The stop control of gas etching can be accurately performed by detecting the amount of reaction product gas generated during the gas etching operation of the resin film to be processed by utilizing the change in the generated amount. That is, in the first method and the third method of the present invention, a large amount of the reaction product gas is generated while the resin film is being gas-etched. When gas etching is sharply reduced, high drilling accuracy can be achieved by stopping gas etching.

In the second method of the present invention, gas etching is performed by superimposing a different resin film that generates a gas different from the gas generated at the time of gas etching of the resin film on the resin film to be processed. When gas etching is performed by superimposing different kinds of resin films in this way, after the perforation of the resin film to be processed is completed, a different kind of gas is generated when the next perforation of the different kind of resin film is started. By detecting a drastic change, it is possible to accurately know the completion time of the perforation of the resin film to be processed. In addition, the stop of the gas etching can be controlled so as to perform high-precision drilling by the detection.

Such a heterogeneous resin film is not particularly limited as long as it generates a reaction molding gas having a composition different from that of the resin film to be treated. For example, if the resin film to be treated is a polyimide film, a chlorine-containing polyvinylidene chloride / sulfur-containing polyethylene sulfate (PES) or the like can be used as the different kind of resin film.

The gas etching method is not particularly limited, but is preferably performed by plasma etching. As the plasma forming gas in the case of plasma etching, it is preferable to use a gas containing active oxygen or an active hydroxyl group. For example, a mixed gas of oxygen and water vapor is preferable. Other plasma forming gases include, for example, methane trifluoride CHF ₃ゃ silane Si F ₄ Activated fluorine.

Gas etching needs to be performed in a vacuum atmosphere. The pressure of the vacuum atmosphere is preferably 13.3 Pa to 1330 Pa. If the vacuum atmosphere pressure is higher than 1330 Pa, the gas sealing at the close part between the mask and the resin film becomes insufficient, and the etching gas easily penetrates into the close part. This may cause a decrease in perforation accuracy.

The heating table preferably has a two-dimensional curved surface. Specifically, it is preferable that the cylinder is formed on a curved surface of one of the divided bodies when the cylinder is divided into two by a plane including the central axis. By forming the surface of the heating table into a two-dimensional curved surface, the surface of the material to be processed can be uniformly and closely contacted so as not to generate wrinkles or gaps. In addition, it is preferable that at least the surface of the heating table be made of a magnet and that the mask be made of a ferromagnetic metal material. More preferably, the surface of the heating table is made of a samarium-containing cobalt-based magnet (permanent magnet or electromagnet) having a high Curie point (temperature at which magnetism is lost), and the mask is made of a ferromagnetic ferrite such as SUS430. It is good to use stainless steel oil. With such a configuration, the mask can be attracted by the magnetic force of the heating table, and the degree of close contact of the workpiece can be further improved.

The mask is generally formed by forming an opening pattern consisting of a large number of etching microholes on a thin metal plate, but the material is not necessarily required to be metal. The shape of the fine holes for etching is not particularly limited, and may be, for example, a circle, a square, a groove, or the like.

When the mask is made of a metal material, the metal material is not particularly limited as long as the material is not eroded by the etching gas. For example, aluminum, stainless steel and the like can be mentioned. However, in the case of plasma etching, if the metal material of the mask has a catalytic effect on the reactive active gas species (radial force) of the etching gas, the effect of reducing the perforation speed is obtained. I do. Therefore, it is preferable to select a non-catalytic material for the mask.

The non-catalytic material can Rukoto cited aluminum A 1, silicon oxide S i 0 _2. However, aluminum and silicon oxide have problems such as low mechanical strength and high thermal expansion coefficient at high temperatures. Therefore, these materials are preferably used as a surface coating material, not as a main material. For example, the main material is stainless steel such as SUS304, SUS430, metal material such as chamber, glass material such as quartz glass or alkali glass, or ceramic material, and the surface of aluminum or Cover with silicon oxide. As the coating method, a method such as coating, plating, vapor deposition, or sputtering may be used.

It is preferable that a component other than the mask, such as a heating table, which is in contact with the etching gas be made of aluminum. Aluminum, by oxygen radicals, which are reactive active gas species, chemically stable on the surface, and because to form a dense aluminum oxide A 1 ₂ 0 ₃ coating. This oxide film is stable at a predetermined temperature or less even against hydrogen radicals obtained by decomposing hydrogen gas and fluorine radicals obtained by decomposing silane SiF ₄ , so that it can withstand a long period of time. be able to. However, if the silicon oxide S i 0 _2, when coated with stainless steel as the main material is not preferred because it is eroded for fluorine radicals.

The etching treatment according to the present invention is not limited to the case of perforating a resin film, but can be applied to surface treatment such as roughening.

Hereinafter, the present invention will be specifically described with reference to embodiments shown in the drawings.

1 (A) and 1 (B) illustrate an apparatus for carrying out the first method of the present invention. FIG. 1 (A) shows a state before the start of the etching process, and FIG. 1 (B) shows a state during the etching process. I have. The processing chamber 17 is configured to be hermetically closed by an opening / closing door (not shown), a vacuum pump 18 is connected via a pipe 19, and an air introducing pipe is connected via a valve 20. The interior of the processing chamber 17 is set to a vacuum atmosphere when the valve 20 is closed, the opening / closing door is closed, and the internal air is exhausted by the vacuum pump 18.

An etching gas supply unit 5 is provided at an upper portion inside the processing chamber 17, and a heating table 3 is provided at a lower portion thereof. The etching gas supply unit 5 is provided with a plasma generation chamber 11, which is vertically separated by a microwave transmitting plate 14, and a raw gas introduction pipe 12 is provided in a lower chamber and an upper chamber is provided in the upper chamber. Waveguides 13 are connected to the side chambers, respectively. The other end of the source gas inlet tube 12 is connected to a source gas supply source (not shown), and the other end of the waveguide 13 is connected to a microwave oscillator 16.

The inside of the processing chamber 17 is made into a vacuum atmosphere of, for example, about 133 Pa, and the plasma generation gas G is supplied to the plasma generation chamber 11 from the raw material gas introduction pipe 12 and the microwave generator 16 is supplied from the microwave generator 16. When microwaves are transmitted, the plasma forming gas G is excited and decomposed to generate reactive active gas species (radicals). The reactive active gas species flows downward from a plurality of gas diffusion plates 15 mounted at regular intervals below the plasma generation chamber 11, and is used for etching the resin film F, which is a material to be processed. Provided.

A mask 4 is attached to the gas outlet of the etching supply section 5 from which the reactive active gas species flows out. As shown in FIG. 2, the mask 4 has an opening pattern formed of a large number of etching fine holes 4a. As shown in FIG. 3, the mask 4 is attached to the mask frame 10 via an expander 9 composed of a tension coil spring or the like at both left and right ends so as to be in a lightly tensioned or moderately relaxed state. The mask frame 10 is detachably attached to a gas outlet of the etching gas supply unit 5. The heating table 3 is installed so as to face the mask 4 at the gas outlet of the etching gas supply unit 5. The heating table 3 has a heater 8 embedded therein and is heated by the heater 8. The heating table 3 is formed as a two-dimensional curved surface having a surface 3a force pressed against the resin film single material F of the material to be processed. At least the surface portion 3a of the heating table 3 is composed of a magnet.

The heating table 3 is supported and fixed by a lower table shaft 23, and is moved up and down by moving the table shaft 23 up and down by an actuator (not shown). A skirt 21 is attached to the side of the heating table 3 so as to move up and down along a slider 22 fixed to the processing chamber 17. A gap 30 is provided at the lower end of the slider 22, and the air and the reaction product gas in the processing chamber 17 are discharged from the gap 30 to the pipe 19 via the opening 31. .

At an intermediate position where the etching gas supply section 5 and the heating table 3 are vertically opposed to each other, an unwinding reel in which a resin film single material F as an unprocessed material is wound at one end (left side) is provided. The transport roller 6 and the tension roller 7 are installed together with the transport roller 6 and the tension roller 7 on the other end (right side), and the take-up reel 2 that winds up the resin film unit material F after etching on the other end (right side). Is installed.

The unwinding reel 1 and the take-up reel 2 are each detachably fitted to the drive shaft, and the unprocessed portion of the resin film single material F is set on the heating table 3. When the resin film F on the heating table 3 has completed the etching process, the portion where the etching has been completed is sent out to the take-up reel 2 and a new unprocessed portion from the unwind reel 1 is heated. It moves intermittently so that it is pulled out over one bull 3. According to the above-described etching apparatus, the resin film single material F to be processed is The etching process is performed as follows.

First, the inside of the processing chamber 17 is evacuated by the operation of the vacuum pump 18. When the setting of the resin film material F between the unwinding reel 1 and the take-up reel 2 is completed as shown in FIG. 1 (A), the heating table 3 is raised as shown in FIG. The upper surface of the single film material F is brought into close contact with the lower surface of the mask 4 on the etching gas supply unit 5 side. The mask 4 is supported by the mask frame 10 in a lightly tensioned or relaxed state.However, when the heating table 3 is raised as described above, the surface 3a comes into close contact with the lower surface of the resin film single material F. Then, the upper surface of the resin film single material F is brought into close contact with the lower surface of the mask 4.

More specifically, as shown in Fig. 2, the heating table 3 presses the surface 3a of the two-dimensional curved surface onto the mask 4 via the resin film F, so that the resin film F and the mask 4 are curved. To generate a tension T on the mask 4. The mask 4 applies a pressure P to the resin film single material F in a direction perpendicular to the surface 3 a of the heating table 3. Therefore, the resin film single material F is in a tension state so as not to generate wrinkles or breaks, and the mask 4, the resin film single material F and the heating table 3 are closely contacted so as not to form a gap between the three members. State.

In such a close state, the plasma forming gas G is supplied from the raw material gas introducing pipe 12, and the microphone mouth wave of the microwave oscillator 16 acts on the plasma forming gas G to generate a reactive active gas species. . The resin film single material F is heated by the heating table 3 and is etched by the reactive active gas species entering through the etching fine holes 4 a of the mask 4. At this time, since the three members of the mask 4, the resin film material F, and the heating table 3 are in close contact with each other so as not to form a gap therebetween, the etching gas does not enter the mutual gap. Therefore, only the portion of the opening pattern of the etching microholes 4 a provided in the mask 4 is etched in the resin film single material F. When the etching process is completed, the plasma forming gas G supplied from the raw material gas inlet tube 12 stops and the operation of the microwave oscillator 16 also stops.c The heating table 3 is shown in Fig. 1 (A). The robot descends to the middle position and waits for the next etching. When the heating table 3 descends in this manner, the interface between the mask 4 and the resin film material F is merely in close contact, so that the mask 4 can be easily separated from the resin film material F. Wear. Therefore, it is possible to shorten the etching cycle without taking time for the separation.

Next, the take-up reel 1 and the take-up reel 2 rotate, and the etched resin film F of a predetermined length is taken up by the take-up reel 2, and the next unprocessed material is taken out from the take-up reel 1. The resin film single material F is pulled out and set on the heating table 3. Hereinafter, the etching process is performed by repeating the above-described etching process one after another.

When the entire amount of the resin film material F wound on the take-up reel 2 has been etched, the heating table 3 is lowered to the lowermost position below the intermediate position shown in FIG. 1 (A) and waits. . In this state, the take-out reel 1 on which the next new unprocessed resin film material F has been wound up is replaced with an empty reel, and the winding reel on which the etched resin film material F has been wound up. Replace 2 with empty reel. Then, the above-described steps are repeated again.

As described above, in the present invention, the resin film single material F is sandwiched between the mask 4 and the heating table 3 in a reduced-pressure vacuum atmosphere so as to be in close contact with each other. Since the gas is etched by gas, the etching can be performed quickly and accurately without being affected by various conditions such as the type of the resin film and whether or not the perforated hole is a through hole. Therefore, the degree of freedom in processing is expanded, and versatility can be further enhanced. FIG. 4 shows an apparatus according to another embodiment for implementing the first method. In this etching apparatus, a mask which is of a single wafer type in the etching apparatus of FIG. 1 is replaced with a continuous band type mask 4. The continuous band-shaped mask 4 is intermittently transferred from the left unwinding reel 26 to the right winding reel 27 while being sandwiched between the heating table 3 and the etching gas supply unit 5. ing.

The heating table 3 is fixed at a fixed height so that it does not move up and down like the etching device in Fig. 1. Instead, the left and right dancer rollers 28 and 28 can move up and down, and the continuous belt-shaped mask 4 and the resin film single material F are curved on the two-dimensional curved surface 3 a of the heating table 3. The pressing, the mask 4, the resin film single material, and the heating table surface 3a are made to closely contact each other.

Next, similarly to the apparatus shown in FIG. 1, when an etching gas is caused to flow on the surface side of the mask 4 as indicated by an arrow, the opening pattern of the etching fine holes 4a of the mask 4 is formed on the surface of the resin film single material F. Etching along can be performed.

The heating table 3 fixed at a fixed height is mounted inside the processing chamber 17 via a skirt 29. A gap 30 is formed at the lower end of the skirt 29, and air and gas inside the processing chamber are exhausted from the gap 30 to the pipe 19 through the opening 31.

As a close means, it goes without saying that the heating table 3 may be moved up and down similarly to the apparatus of FIG. 1 in place of the installation of the dancer rollers 28.

FIGS. 5A and 5B show still another embodiment of the apparatus for performing the first method, wherein FIG. 5A shows a state before the etching process is started, and FIG. 5B shows a state during the etching process. Are respectively shown.

This etching apparatus does not convert the surface 3 a of the heating table 3 into a two-dimensional curved surface, It is flat. The heating table 3 is fixed at a fixed height, and the resin film single material F is brought into close contact with its surface 3a via tension rollers 7,7. By moving the mask frame 10 up and down with respect to the surface 3 a of the heating table 3, the mask 4 is brought into close contact, and the mask 4, the resin film single material F and the heating table 3 are brought into close contact with each other. . While maintaining this close contact, an etching gas is supplied to the surface side of the mask 4 in the same manner as in the apparatus of FIGS. To be applied.

Also in the above-described embodiments of FIGS. 4 and 5, the etching can be performed quickly and with high accuracy without being affected by various conditions such as the type of the resin film and whether or not the perforated hole is a through hole. .

In each of the above-described embodiments, the case where the material to be processed is a resin film single material F is described as an example. However, the present invention can also be applied to an etching process for a laminated material in which a metal foil is laminated on a resin film. In the case of this laminated material, the heating table is brought into close contact with the metal foil side, the mask is brought into close contact with the resin film side, and etching is performed from the mask side. Further, in each of the above-described embodiments, the case where the transfer method of the material to be processed is a reel-to-reel reel take-up type is exemplified. However, the present invention is not limited to this. You may use it.

FIG. 6 shows still another embodiment of the apparatus for performing the first method.

In this embodiment, the etching apparatus of FIG. 1 is further provided with etching stopping means 40. The etching stop means 40 is provided with windows 45a and 45b on both outer walls of the processing chamber 17 respectively, and an infrared light source 41 and a prism 42 for spectroscopy outside one of the windows 45a. The receiver 43 is installed outside the other window 45b. The light receiver 43 is connected to a control device 47, and the control device 47 further includes a drive unit for the on-off valve of the raw material gas introduction pipe 12 and a microwave. It is connected to the drive of oscillator 16. The prism 42 rotates left and right about the axis 44, and according to the rotation angle, separates monochromatic light of a specific wavelength from the infrared light emitted from the infrared light source 41, and converts the monochromatic light. Light is emitted from the window 45 a into the processing chamber 17. The projected monochromatic light passes through the light emitting layer 46 formed on the upper surface area of the mask 4, passes through the opposite window 45b, and is received by the light receiver 43. 7A to 7C illustrate the light emitting layer 46 generated by gas etching. The light-emitting layer 46 is a cloud-like layer of the reaction product gas generated when the resin film F as the material to be processed is etched by the reactive gas species R of the etching gas. Indicates the initial state of the etching, FIG. 7 (B) shows the intermediate state, and FIG. 7 (C) shows the final state. When the resin film single material F is, for example, a polyimide film, its constituent elements are carbon (:, hydrogen H, oxygen II, nitrogen N, etc.) The reactive activity of the etching gas flowing out of the plasma generation chamber 11 when gas species R is oxygen radicals, the reaction product gas Gx consists C0 _2, H ₂ 0, mixed-gas composition of NO ₂ and the like. Therefore the progress of the etching process, these reaction raw formed The gas Gx forms a light emitting layer 46 with a thickness of several mm that emits light of a specific wavelength for each gas by dissipating energy during radical chemical reaction in the upper surface area of the mask 4. This light emitting layer 4 6 Although the color varies depending on the gas composition, it is light in the visible light range to the ultraviolet light range, and emits light that normally shines from purple to pink violet in visible light.

The mixed gas of the light-emitting layer 46 absorbs only light of a specific wavelength; I, and absorbs a larger amount of light as its concentration (amount of generation) increases. Therefore, when the prism 42 is rotated left and right to irradiate the light-emitting layer 46 successively with different wavelengths, the amount of reaction product gas generated is detected based on the amount received by the light receiver 43. be able to. When the etching process is in the final state of Fig. 7 (C), the generation of reaction product gas is larger than in the initial state of Fig. 7 (A) and the middle state of Fig. 7 (B). Since the amount has been drastically reduced, the drastic decrease in the amount of generated reaction product gas can be easily detected by the light receiver 43. The signal detected by the photodetector 43 is input to the controller 47, which outputs a signal to the drive unit of the open / close valve of the source gas introduction pipe 12 and the drive unit of the microwave oscillator 16. To stop etching.

As described above, since the etching stopping means 40 detects the drastic decrease in the amount of reaction product gas by infrared spectroscopy and stops the etching, the stop control of the perforation can be easily and accurately performed. In the present invention, the term “etching stop based on the detection of a drastic change in the amount of reaction product gas generated” is not limited to stopping the etching at the same time as the detection of the drastic decrease, but stopping the etching at a certain time after the detection of the drastic decrease. Including doing. The fixed time generally means several tens of seconds.

In each of the apparatuses shown in FIGS. 1, 4 and 5 described above, since the etching stop means 40 is not provided, it is impossible to automatically detect a sharp decrease in the amount of the reaction product gas GX. However, a drastic decrease in the amount of the reaction product gas G x can be visually confirmed by providing a viewing window (not shown) on the side wall of the processing chamber 17, so that etching can be visually confirmed. Stop it.

FIG. 8 illustrates an apparatus for implementing the second method of the present invention.

In this embodiment, the apparatus shown in FIG. 1 is gas-etched by superimposing a resin film F X that generates a gas different from the resin film single material F on a resin film single material F to be processed. For this reason, on the side where the unwinding reel 1 that unwound the untreated resin film F alone was installed, an unwinding reel 47 that unwound a different type of resin film Fx was installed, and the untreated resin film F was wound. On the side where the take-up reel 2 to be taken is installed, a take-up reel 48 for taking up the treated different resin film Fx is provided.

Unwind reel 4 7 and take-up reel 4 8 It is intermittently driven in synchronization with the take-up reel 2, and is set on the heating table 3 so that different types of resin films FX are stacked under the resin film F of the material to be processed, and conveyed. Has become.

Also in this apparatus, gas etching is performed in a vacuum atmosphere. That is, the resin film unit material F and the dissimilar resin film Fx, which are superimposed on each other, are sandwiched between the mask 4 and the heating table 3 so as to be in close contact with each other, and the side of the mask 4 is etched into the fine holes 4a. Gas etching is performed via the. By such a treatment, etching can be performed quickly and with high precision without being affected by various conditions such as the type of the resin film and whether or not the perforated hole is a through hole.

FIG. 9 illustrates another embodiment of an apparatus for carrying out the second method of the present invention. C This embodiment provides an etching stop means 40 similar to that of FIG. 6 for the apparatus of FIG. It is a thing. In the apparatus shown in Fig. 9, since the different resin film FX is superimposed on the resin film F of the material to be treated, the gas etching process is performed as shown in Figs. 10 (A), (B), and (C). Done in That is, each of FIGS. 10A and 10B shows an initial state where etching is started, FIG. 10B shows an end state thereof, and FIG. 10C shows a state where etching of a different resin film FX is started.

As the dissimilar resin film F X, one that generates a reaction product gas having a composition different from that of the resin film single material F as the material to be treated is used. For example, when the resin film F to be treated is a polyimide film, a polyvinylidene chloride containing chlorine or a polyethylene sulfate containing sulfur is used.

(PES) etc. are used. In the initial state of FIG. 10 (A) and the final state of FIG. 10 (B) during the etching process, since the resin film single material F has been etched, the light receiving device 43 of the etching stopping means 40 is not provided. As shown by the solid line in the graph of FIG. 11, the reaction product gas, the specific wavelength of G ₂ ,, ₂ is detected to appear strongly. However, at the time the out heterologously resin film FX of etching is started in FIG. 1 0 (C), a specific wavelength of the reaction product gas G ₃ as indicated by the broken lines; I ₃ is rapidly emerged, are filed so far The specific wavelengths I,, λ ₂ decrease sharply.

When the resin film material F is etched by itself without overlapping the dissimilar resin films FX, the film cross section changes as shown in Fig. 7 (7), (Β), and (C). Therefore, in the initial state and middle state of (beta) in FIG. 7 (Alpha), as shown by the solid line in the graph of FIG. 1 2, resin film alone material F or we generated reaction product gas d, a specific wavelength of G ₂ I ,, λ ₂ appears, and then, in the terminal state of FIG. 7 (C), as shown by the broken line, only the specific wavelength, λ ₂ sharply decreases, and the wavelength ₃ does not appear.

The appearance of the specific wavelength ₃ is because the reaction product gas G ₃ having a composition different from that of the reaction product gas G,, G ₂ generated from the resin film single material F based on the heterogeneous resin film FX, When the photodetector 43 of the etching stopping means 40 detects this, the on / off valve of the raw material gas introduction pipe 12 is closed via the control device 47, and the operation of the microwave oscillator 16 is stopped to perform the etching operation. Stop. The stopping of the etching operation based on the detection of the drastic change in the composition of the reaction product gas Gx may be performed simultaneously with the detection of the drastic change, or may be performed after a certain time has elapsed. The fixed time is generally several tens of seconds.

For etching apparatus of FIG. 8 not provided with the etching stopping means 4 0, but the upheaval of the composition of the reaction product gas Gx can not automatically detected emission layer that a particular wavelength lambda ₃ to the appearance of the reaction product gas G ₃ 4 6 Since the color changes, the etching can be stopped by visually observing the color.

8 and 9 described above may be provided on a flat heating table 8 as shown in FIG. 5 instead of the two-dimensional curved heating table 8. The single-wafer mask 4 may be replaced with a continuous band-shaped mask 4 as shown in FIG. Suffered The transfer method of the processing material may be a single-wafer method instead of the reel-to-reel reel winding method.

The mask 4 used in the present invention is most susceptible to the effect of the catalytic action because it is brought into close contact with the material to be processed during gas etching. That is, if the mask is composed of a metal foil having a catalytic action such as nickel Ni, iron Fe, chromium Cr, etc., the reactive active gas species of the etching gas (oxygen radicals, hydrogen radicals, fluorine radicals, chlorine radicals) ) Recombine, the concentration of the reactive active gas species is drastically reduced, and there is a problem that the drilling speed is reduced. However, by constructing a non-catalytic Aruminiu厶A 1, silicon oxide S i 〇 ₂ material such as the reaction of active gas species, it is possible to prevent a decrease in drilling speed.

However, there is a problem in using aluminum directly as a structural material because aluminum and the like have reduced strength and high thermal expansion not only at room temperature but also at a high temperature of, for example, 200 ° C. or higher. Therefore aluminum A 1, silicon oxide S i 〇 ₂ uses strength and thermal expansion Advantageously metallic material, a etc. glass material or Ceramic material as the main material, used as a coating material on the surface of the main member Is preferred. In addition, it is preferable that the device components other than the mask, such as the heating table, be made of aluminum rather than stainless steel SUS containing nickel Ni, iron Fe, chromium Cr, or the like. Aluminum, by oxygen the radical Le is because forming a chemically stable, and dense aluminum oxide A 1 ₂ 0 ₃ coating on the surface thereof. The aluminum oxide film is stable to hydrogen radicals and fluorine radicals at a predetermined temperature or lower, and can withstand a long period of time.

FIG. 13 shows an example of an apparatus for performing the third method of the present invention.

In this embodiment, as a material to be treated, a laminated material Fa in which a metal foil is laminated on a resin film and an opening pattern for etching is formed on the metal foil is used. are doing. The laminated material Fa is set such that the metal foil side on which the opening pattern for etching is formed faces the etching gas supply unit 5 and the opposite resin film side is in close contact with the heating table 8. In this state, the metal foil side of the laminated material Fa is subjected to gas etching under a vacuum atmosphere.

Therefore, the feature is that no mask is provided because the metal foil functions as a mask. Although a mask is not provided in this manner, the metal foil has an opening pattern for etching, and the resin film is etched through the opening pattern for etching. The etching can be performed quickly and accurately without being affected by various conditions such as the type of the film and whether or not the perforated hole is a through hole.

If the metal foil is a material that is easily oxidized by oxygen radicals, such as copper foil, for example, gold plating or gold deposition that does not attack the surface of the metal foil by oxygen radicals and has no catalytic action is used. It is preferable to apply.

FIG. 14 shows another embodiment of an apparatus for performing the third method of the present invention. In this embodiment, an etching stop means 40 is provided in the apparatus shown in FIG. As in the apparatus shown in FIG. 6 described above, the stop control of the etching operation can be easily and accurately performed by detecting a drastic change in the amount of the reaction product gas generated.

Although the etching stop means 40 is not provided in the apparatus of FIG. 13, the etching is stopped by visually detecting a sharp decrease in the amount of the reaction product gas G x similarly to the apparatus of FIG. 1 described above. Can be.

Similarly to the above-described apparatus, the apparatus shown in FIGS. 13 and 14 also uses a flat heating table 8 as shown in FIG. Instead of a reel-to-reel reel winding method, the processing material may be transferred in a single-wafer manner.

In addition, in the apparatus shown in FIGS. 13 and 14, as shown in FIG. A reel 47 and a take-up reel 48 may be provided so that a different kind of resin film FX is overlapped on the laminated material Fa of the material to be processed and etched. In this case, the gas etching may be stopped by detecting the composition of the reaction product gas GX generated from the heterogeneous resin film FX.

As described above, according to the present invention, it is possible to perform etching quickly and accurately without being affected by various conditions such as the type of resin film and whether or not a hole to be etched is a through hole. A highly versatile etching can be performed.

In addition, when the amount of reaction product gas generated during etching is detected, and the gas etching is stopped when the amount of generated reaction gas suddenly exceeds a predetermined value, the stop control of the perforation is easily and accurately performed. Can be. When a mask or other device component is made of a material that is non-catalytic with respect to the reactive active gas species of the etching gas, the perforation rate due to recombination of the reactive active gas species of the etching gas is reduced. The drop can be prevented.

Example 1

As a material to be processed, a polyimide film single material ("UPILEX" manufactured by Ube Industries, Ltd.) having a thickness of 50 zm was plasma-etched with oxygen radicals using the etching apparatus shown in Fig. 1 under the following processing conditions.

The treated polyimide film alone has an average taper angle at which the average diameter at the upper surface is 60 m and the diameter decreases toward the lower surface side, compared to the diameter of the metal mask etching opening of 50 m. A large number of tapered through-holes with an angle of 17 ° could be obtained. The variation in the diameter on the top surface of the film is not more than 10% of the target diameter of soil, and the hole wall inclination angle is within the target range of 15 to 45 degrees, which is suitable for practical use. Was. No residue was found in any of the drilled through holes.

[Processing conditions] Metal mask: 50 m thick stainless steel SUS 304 plate

Etching opening diameter 50〃 m

Mounting tension 1.5 kg

Heating table: Surface radius of curvature 800 mm

Heating temperature 200 ° C

Processing time (time until the hole penetrates) 10 minutes

Mic mouth wave output: 1.8 kw

Gas for plasma formation: Supply of oxygen 100 m0Z and steam 1000 cZ

Degree of vacuum in vacuum atmosphere: 1 3 3 Pa

Examples 2 to 6

Except for using five types of metal masks, the diameters of the etching openings were 75 m, 100 m / zm, 150 m, 200 m, and 250 m, respectively. The same polyimide film single material was etched under the same conditions as in Example 1 (Examples 2 to 6).

In all of Examples 2 to 6, the variation in diameter at the upper surface of the polyimide film was ± 10% or less of the target diameter, and the hole wall inclination angle was in the range of 15 to 45 degrees of the target. It was suitable for practical use.

Examples 7 to 17

In the etching apparatus shown in Fig. 1, each component was made of the following materials, and a 50 / m-thick polyimide film ("UPILEX" manufactured by Ube Industries, Ltd.) was treated with oxygen radicals under the following processing conditions. Plasma etching was performed until the hole penetrated.

In this etching process, the combination of the mask, the mask frame, the heating table, and the gas diffusion plate was varied as shown in (a) to (k) in FIG. 15 in terms of the materials used (Example 7). ~ 1 7), its etching The material dependence of speed was investigated. Figure 15 shows the measurement results.

The above (a) to (k) show masks made of the following materials in which openings for etching having a diameter of 150 μm are formed at a pitch of 1 mm. In addition, the etching speed is shown as a relative magnification based on the mask in (a).

[Each component of the device]

Microwave transmission plate 14 4: quartz glass material

Source gas inlet tube 1 2: Aluminum material

Etching gas supply unit 5: Aluminum material

Mask frame 10: Aluminum material

Gas diffusion plate 15:

(1) Stainless steel SUS304

(2) Aluminum material

Heating table 3:

(1) Stainless steel SUS304

(2) Aluminum material

Mask 4:

(a) Stainless steel with a thickness of 50 mm SUS304 (18% Cr + 8% Ni + 74% Fe) material (Example 7)

(b) Stainless steel SUS430 (12% Cr + 88% Fe) with a thickness of 50 m (Example 8)

(c) Amber (36% Ni; 64% Fe) with a thickness of 50 am (Example 9)

(d) A material in which S i 〇 ₂ was sputtered for 0.1 m to the above material (Example 10)

(e) The above (a) material sputtered with 0.1 μm of aluminum (Example 11) (f) above (b) material silicon oxide S i 0 ₂ to 0. 1〃M sputter-ring were wood (Example 1 2)

(g) Aluminum (0.1) m sputtered to (b) above (Example 13)

(h) the silicon oxide (c) material 0 ₂ 0. 1 m sputtered Material (Example 1 4)

(i) A material in which aluminum was sputtered on the above material (c) at 0.1) m (Example 15)

(j) Quartz glass material with a thickness of 120 m (Example 16)

(k) Alkaline glass material with a thickness of 120〃m (Example 17)

[Processing conditions]

Degree of vacuum in vacuum atmosphere: 199.5 Pa

Plasma forming gas flow rate: 1 000 m 1 / min

Heating temperature: 250

Raw material gas: oxygen and water vapor

Microwave power: 2 kw (maximum 5 kw)

As is clear from the results shown in FIG. 15, the etching rate of the SUS430 material containing 8% Ni is about twice that of the SUS430 material containing no Ni. This, SUS 304 material and S US 4 30 material together, the dense C r ₂ 0 ₃ coating was formed, and to prevent consumption of oxygen radicals sealed inhibitory oxidation to internal mask material by oxygen radicals but because during coating of SUS 304 material containing the N i having a catalytic action, [0] + [0] → 0 2 results in recombination reactions, in internal mask vicinity and the mask holes, effective This is because the number of oxygen radicals decreases.

The etching rate of Invar containing Ni, which is about 5 times that of stainless steel SUS 304, is about 1 Z3 or less. This is because oxygen radicals This is because, in addition to having a large Ni content that has a catalytic action to recombine the oxides by etching, there is no formation of a dense passive film of Cr ₂ O s that prevents the progress of internal oxidation.

When both sides of stainless steel SUS304, SUS430 and amber are coated with aluminum by the sputtering method, they are etched about 6 times more than uncoated SUS304. Speed is obtained. This is considered to be because the recombination of oxygen radicals can be prevented by coating with an aluminum film having no catalytic action.

Stainless steel SUS 3 0 4 material, SUS 4 3 0 material, the scan package evening on both surfaces of the Invar material) when covering the S i 〇 ₂ by ring method, with respect to SUS 3 0 4 material uncoated, approximately 8 times Is obtained.

This is considered to be because recombination of oxygen radicals can be prevented by coating with the silicon oxide SiO ₂ film having no catalytic action, and the effect is slightly larger than the above-described coating with the aluminum film. However, the etching rate is slightly lower than the etching rate of the non-metallic quartz glass alkali glass material. This is thought to be due to the fact that the sputter film is extremely thin and porous.

According to the flexible quartz glass material or the Al-Kyri glass material, an etching rate about 10 times as high as that of the coated SUS 304 material can be obtained.

If a mask made of quartz glass or Al-Li glass is used and other parts of the apparatus are made of aluminum, the maximum etching rate can be obtained, but the gas dispersion plate is made of SUS. When the material is changed to 304, the etching rate is reduced by half. This is presumably because oxygen radicals generated in the plasma chamber 11 recombine due to the catalytic action of the SUS304 gas dispersion plate, and thus the oxygen radical concentration used for etching is reduced.

Similarly, change the heating table from aluminum to SUS304 Then, the etching rate is reduced to a range of about 65% to 95% of the maximum etching rate and the variation is increased. This is because if a hole penetrates through the resin film in the final stage of etching, the heating table was not directly in contact with the oxygen radicals, so the oxygen radicals effectively acted and etching was performed at high speed. This is thought to be because the SUS304 material catalyzes the oxygen radical contact.

Example 1 8, 1 9

Using the apparatus shown in Fig. 13 with the mask 4 removed from the apparatus shown in Fig. 1, the following workpieces ① (Example 18) and ② (Example 19) were etched under the following processing conditions. .

As a result, in the case of the material to be treated 貫通, the material penetrated in 5 minutes, and in the case of the material to be treated ②, the material penetrated in 12 minutes. In addition, the accuracy of the through-holes in each of Examples 18 and 19 was the same as in Example 1 except that the diameter variation was ± 10% or less of the target diameter, and the hole wall inclination angle was the target. It is in the range of 16 to 45 degrees and is suitable for practical use.

(Processed material)

Material to be treated: Aluminum foil with a diameter of 100m provided with through-holes with a diameter of 100m and a polyimide film with a thickness of 50m (made by Ube Industries, Ltd.) Iupirex ") and laminated materials

Material to be treated: SUS304 foil with a thickness of 200 / m and a through-hole with a diameter of 100 / m in a given burner, and poly-imide film with a thickness of 50 / zm (Ube Laminated material with "UPILEX" manufactured by Kosan Co., Ltd.

[Processing conditions]

Heating table: Surface radius of curvature 800 mm Heating temperature: 200 ° C

Mic mouth wave output: 1.8kw

Gas for plasma formation: oxygen 100 c c Z content and water vapor 100 c c

Supply Z minutes

Degree of vacuum in vacuum atmosphere: 1 3 3 Pa Industrial applicability

It is effective as a dry etching method and apparatus for resin films. It is particularly useful when gas etching the surface of a resin film used for a FPC (Flexible Printed Circuit) substrate.

Claims

The scope of the claims

1. Either a resin film alone or a laminated material obtained by laminating a metal foil on a resin film is used as a material to be treated, and a heating table is closely attached to one surface so as to sandwich the material to be treated. A dry etching method for a resin film, wherein a mask having an opening pattern for etching formed on the surface thereof is closely contacted, and the material to be processed is gas-etched from the mask side in a vacuum atmosphere while maintaining the close contact state.

2. While the heating table is movable, the mask is fixed at a fixed position, the heating table is moved to the material to be processed, and the material to be processed is pressed against the mask. The method for dry etching a resin film according to claim 1, wherein the material to be processed and the heating table are brought into close contact with each other.

3. The method according to claim 1, wherein the amount of the reaction product gas released from the etching opening of the mask during the gas etching is detected, and the gas etching is stopped when the amount of the generated reaction gas suddenly changes to a predetermined value or more. A dry etching method for the resin film described in the above.

4. With the resin film alone as the material to be treated, a different resin film that generates a different gas from the material to be treated is superimposed on the material to be treated, and a heating table is provided on the surface of the different resin film side. A resin film that is brought into close contact with a mask having an opening pattern for etching formed on the surface of the material to be treated, and gas-etching the material to be treated from the mask side in a vacuum atmosphere while maintaining the close contact state. Dry etching method.

5. While the heating table is movable, the mask is fixed at a fixed position, the heating table is moved to the different resin film, and the material to be processed is pressed against the mask. The resin foil according to claim 4, wherein the material to be treated, the different resin film, and the heating table are brought into close contact with each other. Dry etching of film.

6. The resin film according to claim 4, wherein the composition of the reaction product gas released from the etching opening of the mask during gas etching is detected, and the gas etching is stopped when the type of the composition changes. Dry etching method.

7. A laminated material obtained by laminating a metal foil having an opening pattern for etching on one side of a resin film is used as a material to be treated, and a heating table is brought into close contact with the surface of the material to be treated on the resin film side, and the close contact state is maintained. A dry etching method for a resin film, wherein the metal foil side of the material to be treated is gas-etched in a vacuum atmosphere.

8. The method according to claim 7, wherein during the gas etching, the amount of the reaction product gas released from the etching opening of the metal foil is detected, and the gas etching is stopped when the amount of the reaction gas changes drastically to a predetermined value or more. Dry etching method for resin film.

9. The dry etching method for a resin film according to claim 1, wherein the pressing surface of the heating table is formed as a convex two-dimensional curved surface.

10. The dry etching method for a resin film according to claim 1, wherein said gas etching is plasma etching.

1 1. The dry etching method for a resin film according to claim 1, wherein the resin film constituting the material to be treated is a polyimide film.

1 2. A processing chamber (17) that enables vacuum inside, an etching gas supply section (5) installed inside the processing chamber, and a gas outlet installed to cover the etching gas supply section A mask (4) on which a patterned etching opening pattern is formed, and a heating table movably installed inside the processing chamber. (3), wherein the heating table (3) is in close contact with one surface of the material to be treated (F) mainly composed of a resin film, and the mask (4) is in close contact with the opposite side of the material to be treated. A dry etching device for resin film.

1 3. Detecting means (40) for detecting the amount of reaction product gas released from the etching opening of the mask (4) during gas etching; and stopping the gas etching based on a detection signal of the detecting means. 13. The dry etching apparatus for a resin film according to claim 12, further comprising means for stopping etching.

1 4. A processing chamber (17) that enables vacuum inside, an etching gas supply section (5) installed inside the processing chamber, and a gas outlet of the etching gas supply section. A mask (4) having a mounted opening pattern for etching, and a heating table (3) movably installed in the processing chamber (17), and a resin film of a material to be processed. The heating table (3) closely adheres to the dissimilar resin film and the mask (4) for both materials obtained by laminating a dissimilar resin film that generates a different gas from the dissimilar resin material. A dry etching device for a resin film, wherein the device is in close contact with the material to be treated.

1 5. Detection means (40) for detecting a change in the composition of the reaction product gas released from the etching opening of the mask (4) during gas etching; and stopping the gas etching based on a detection signal of the detection means. 14. The dry etching apparatus for a resin film according to claim 14, further comprising an etching stopping means.

1 6. The dry etching apparatus for a resin film according to claim 12, wherein a plasma generation chamber (11) is provided in the etching gas supply section (5).

1 7. The claim wherein the mask (4) is made of a material that is non-catalytic with respect to the reactive active gas species of the etching gas flowing out of the plasma generation chamber. A dry etching apparatus for a resin film according to box 16.

18. The resin film according to claim 17, wherein the non-catalytic material is a metal material, a glass material, or a ceramic material, the surface of which is coated with either aluminum or silicon oxide. Dry etching equipment.

1 9. A processing chamber (17) that enables the inside of the processing chamber to be evacuated, an etching gas supply unit (5) installed inside the processing chamber, and a movable chamber inside the processing chamber (17). A heat treatment table (3) installed, wherein a metal foil having an opening pattern for etching formed on one side of a resin film is laminated as a material to be treated, and the laminate is provided on the resin film side of the material to be treated. A dry etching apparatus for a resin film, wherein a heating table (3) is brought into close contact with the metal foil side to face a gas outlet of the etching gas supply section (5).

20. Detecting means (40) for detecting the amount of reaction product gas released from the etching opening of the metal foil during gas etching, and stopping etching to stop the gas etching based on a detection signal of the detecting means. The dry etching apparatus for a resin film according to claim 19, comprising means.

21. The dry etching apparatus for a resin film according to claim 19 or 20, wherein a plasma generation chamber (11) is provided in said etching gas supply section (5).