TW479446B - Method and apparatus of dry-etching resin film - Google Patents

Abstract

This invention provides the method and apparatus of dry-etching resin film. Either one of laminate materials formed by laminating metal foils on a resin film element material and a resin film is used as an untreated material (F), a heating table (3) is brought into close contact with one-side surface and an etching opening pattern-formed mask (4) is brought into close contact with the opposite-side surface so as to sandwich the untreated material (F), and the untreated material is gas-etched from the mask (4) side under a vacuum atmosphere with the close contact conditions maintained.

Description

479446, Technical Note 3 of Invention Description (1) + The present invention relates to a dry etching method of a resin film and a device thereof, more details. It means that the surface of the resin film used in FPC (Flexible Printed Circuit Board, Flexible II) substrates etc. is not affected by the device by gas etching. As we all know, with the miniaturization and weight reduction of information and communication equipment, the thickness of IC chip substrates is thinner and multi-layered. Due to the relationship between the thickness and the thickness, especially the resin film is used as the substrate material for FPC. Among the resin films used in the board material, especially the polyimide and μQ soil film are due to its chemical properties (chemical resistance), thermoplasticity, financial and thermal properties), electrical properties (permittivity, insulation resistance) (Special ^ water absorption, dimensional stability, thermal expansion coefficient), and Do not resist: strength 'financial strength' excellent relationship, widely used. Most temples T use resin films that are relatively water-based and wettable sulfide (PPS). I-Human violence The resin films used for these FPC substrates are used in the form of tree-removing film monomers, and what? Grease: two kinds of laminated materials used in metal boxes; In both cases; most of the perforating methods of this resin film are mechanical processing, physical or chemical perforation: both sides in the broad sense "cannot be quickly and highly precise: finished work; non-through holes Restrictions on perforation of resin films, etc., have the disadvantage of lacking versatility for specific species.

V. Description of the invention (2) System: Difficult to make :: ί The problem of stopping the control of the piercing operation when etching the perforation method has the relationship of I positive 2 = control, the reactive reactive gas species of Liu ^ = Zhishiren ΑΑ μ〆 里 (originally in the circle), due to the catalyst action of the device itself, there is a disadvantage of reducing the perforation speed. The book of invention 揣 = 3 of the 3rd chapter is to provide a universal application that can be perforated quickly and precisely regardless of the type of the hole to be worn, and no matter the type of the resin film. The dry engraving method and device of high-resistance resin film, please refer to item 2 of the specification, in order to provide a dry etching method and device of resin film which can easily and accurately control the perforations. The third object is to provide a dry etching device for a resin film which can prevent the reduction of the perforation speed caused by the recombination of the money type gas and the i type. Shou f, in order to achieve the i-th objective, the following three types of dry etching methods are provided. The first method is to use any one of the resin film monomer material and the resin film laminated metal foil t laminated material as the material to be treated, and sandwich the surface between the treated material and the evil side while closely contacting the heating platform. A mask with an opening pattern for etching is formed on the surface t on the opposite side, and when the tight contact is maintained, it is characterized by using gas etching from the shielding side in a vacuum surrounding environment. The second method is to use a single resin film material as the material to be processed.

Page 5 \\ 326 \ 2d- \ 90-03 \ 89126199.ptd 479446 V. Description of the invention (3) A heterogeneous resin film of a gas different from the material to be treated overlaps with the shape of "1", and the heterogeneous resin film The surface on the side is tightly attached 埶: △: Said by the table on the side of ^ lining material ^ 'The close-connected shape of Yue Yue, two pictures = masking, the same day to maintain the tight state, in a vacuum surrounding environment:. The sheltered side uses gas as its characteristic. ^ The method is to use a metal layer formed with an opening pattern for engraving on the: ii, it: surface layer as the material to be treated, and the material to be treated must be in close contact with the heating platform to maintain the tight state. It is special to use gas I worm carving from the shielding side underneath the workers, and the present invention is to achieve the first dry etching device. The i. 1 device of the following three kinds of tree shrew membranes is to make the internal acres & ^ ^ ^, μμ 丨 a vacuum processing chamber, set the etched emulsion of xenon krypton there The supply part covers the heart of the etching gas supply part. The cover with an opening pattern for etching is formed. 1. The heating platform constructed by the heating platform installed inside the processing chamber is closely connected to the resin film as the main material. At the same time as one side of the material to be processed, the above-mentioned cover material is connected to the opposite side of the material to be processed, and the dry etching device of the tree film is a feature thereof. = Set to 'from the processing chamber where the inside can be a vacuum, set there. Oxygen II: The etched rolling body supply section is installed to cover the etch gas supply section, and the body and muscle exit are installed. Covered with an opening pattern 1: i: a heating platform that is installed in the interior of the processing chamber freely. 'The heating platform is a resin film monomer material that is in close contact with the material to be processed.

Page 6 V. Description of the invention (4) Simultaneously with the two materials that will overlap with the resin film monomer, Yu Er = gas dry resin film of the different resin film material dry etching dream: the masking system is closely attached to the foregoing The third device to be processed is a person who can make Erguang / Straight as a feature. The inside of the processing chamber is supplied with 1% of the processing chamber, and the heating platform installed inside the processing chamber is provided at the aforementioned place. The metal foil is laminated on one of the resin films to form an opening pattern for etching. The aforementioned resin of the material to be treated is treated as a material to be treated under the tree vacuum of the gas outlet of the grease-type etching device "specially: i,": the resin film of the material to be treated is closely adhered to the heating platform: ：:: ;; ::: 1 and 2 and 2 ”in the device 'closed to Yoshiri W, 、, σ 果' so that the opposite side of the resin film shielding the laminated material 2: Λ = laminated metal box In the second complex: the person-side is tightened and the gas is engraved. The resin film is heated in a tense state and ^ ^^ ': This is enough to accurately and quickly perforate. Also, whether = hole Whether or not, the type of resin film can realize high-precision and rapid mouth closing. 2) 'In the first method and device, opening from masking etching' Method and device: opening from metal foil etching, No. 7 Page \\ 326 \ 2d- \ 90-03 \ 89126199.ptd 4 / ^ 446 5. Explanation (5) — i The amount of gas generated by the reaction of i 1 is detected, and when it is time to go against the temple, stop the gas 1 worm engraving. In other words, 'When the material to be treated is completed: the period of time ...' The relationship between the occurrence and the decrease of the amount of the device can be detected at the correct time point. In the second method and "I", is it possible to detect the gas generated from the opposite side of the opening for shielding? Thin film body. &Quot; η skin treatment% " :: body composition is subject to radical change, detection = gas stop operation is stopped exactly. ^ Month can be corrected :: the third purpose is in the first! And the first 2 Reactive active gas species non-catalyst of the saki body in the device: the reduction of the second perforation speed. The best implementation of the combination of the rolling body species is open! About the resin of the material to be treated with the gas remaining Monolithic material of thin film resin film, or laminated material laminated with resin film, but using this metal box is provided with Ezhicai: on the map: use: layer = the material of the deposited metal layer is not particularly limited :, ： ： ； ； 5 Xigan ^ The resin film for the substrate is made of polyimide Shang film Habitat II: He, liquid polyethylene stuffed iv 'polymethine stupid sulfide film or the like can also be present' X out of the first and second method towels' close contact with the heating stage to the processed material

479446

On the other side, a masking film having an opening pattern for etching is used, and the masking side is engraved with the gas surname. The reason why the heating platform is in close contact with the place = side is to keep the shielding on the opposite side and the resin film in good shape: the loose connection and the relationship between the heating resin film. The result of maintaining the sheltered washing tree: the good close contact between the two, makes the etching scattered two = open;] Dagger :; high perforation accuracy ... heating the tree. = ,,, ° Fruit, can etch speed so that you can quickly perforate. = The third method of the invention is to closely contact the heating platform to the resin side of the laminated material, and the side of the metal box provided with an opening pattern for etching. As described above, the original head of the resin film side of the laminated material closely contacting the heating platform is based on the relationship of adding S =! Film. With this heating, it is possible to improve the formation of the openings for etching from 蚀刻 ,, 隹 to the genus, and the formation of etching openings: relationship, high-precision etching can be performed without masking. Change two m: forming opening patterns for etching As a result of the laminated material as the material to be treated, m is a box that has the same function as shielding. U 1 π Although the heating temperature of the heating platform varies depending on the type of resin film, it ranges from 150 ° C to 35 ° C. The range of 0 degrees is suitable. With the heating temperature mentioned above, high-speed etching can be performed without melting or deforming the resin film. About the stop of gas-cutting A batch method 丨 1, mouth | As early as people: day, 丨, 丨, Once the system is completed, the amount of gas generated by the reaction of the resin film to be processed during the gas etching operation must be measured, that is, the control can be accurately performed by using the change in the amount of edge generation. In other words, the In the first and third methods of the present invention, during the etching of the resin film with a gas, a large amount of reaction occurs to generate a gas, but it decreases sharply when the perforation is completed.

Page 9 479446 V. Description of the invention (7) As a result of stopping the gas etching when the amount of occurrence is drastically reduced, a high-accuracy penetrating L can be completed. In the second method of the present invention, the resin film monomers and materials to be processed are gas-etched by overlapping different resin films, and the gas generated during the gas etching of the different resin films is different from the gas used for processing. The gas generated by the resin film monomer. As described above, when a heterogeneous resin film is overlapped and gas etched, after the perforation of the resin film to be processed is completed, the relationship of the heterogeneous gas will occur when the next heterogeneous resin film is perforated, and then the composition of the reaction gas will be double measured. When there is a radical change, it is possible to know exactly when the perforation of the tree film to be processed is completed. In addition, based on the detected results, it is possible to perform stop control of gas etching to perform high-precision punching. * The heterogeneous resin film is not particularly limited as long as it generates a reaction forming gas having a composition different from that of the resin film to be processed. For example, where the resin film is a polyimide film, Nichiji, a polyethylene chloride containing chlorine and a polyethylene sulfate (pEs) containing sulfur can be used. The method of engraving gas money is π >… is particularly limited, but it is advisable to use plasma etching. As for the plasma etching in the plasma etching method, the system is preferably active oxygen or containing active hydroxyl groups. For example, using a gas, for example, three =; (two other plasma-forming gas, as an example. A WCHF3) or Shi Xiyao (called) live gas I insect engraving system must be in the direct 3τ 1 .13lp;: ^ 33〇p :: When the I4r force is higher than 1330Pa, the second plate is shielded. The environment around the vacuum is beautiful. The gas seal of the sealing part of Xingxing resin film

Description of the invention (8) The reason why the etching gas is easy to enter the dense eight holes is insufficient. 4 妾 σ [" Relationship between knives, 'is to reduce the surface shape of the penetrating heating platform, and, y is preferably a two-five-man curved surface. ° It is desirable to form the cylinder on a curved surface that is concretely divided into surfaces including a central axis. Plus 埶 σ becomes two o'clock, and the surface of ten σ is formed two times, so that wrinkles and gaps do not occur ςς :: surface. And at least its surface is made of magnets; = magnetic metal material is used as a shield. φ —From θ 乂 m Ν Rishou, the person with a higher demagnetization temperature) the higher the right ^, and 疋, the Curie point (loss of magnet) constitutes the heating surface of the heating platform: $ t-based magnets (permanent magnets) Or the level △ = ,! 羯 is suitable. Because of this structure, 可用 can be used to complete it. The ^ masking can make the degree of tightness of the material to be treated more five. The masking is made of micro-angles and etched with gold. Gas aluminum, not metals with catalyst materials are generally grooves with open pattern pores, etc. When the rust steel, which belongs to the material structure invades rice, acts as a material, it should be non-catalytic. 5 For example, the structure does not form a shielding material. However, the metal plate is formed of a material that has a reduced catalytic activity in the aftermath. Most of it is fine for etching, but the material is not necessarily a metal. It is particularly limited, for example, It can be formed into a circular sundial. The metal material is not particularly limited as long as it is not lost. For example, when plasma worms are used, if the reactive species (radicals) of the cover are low, The effect of perforation speed. The material is appropriate. ~, And silicon oxide can be cited Shao Α1 Si〇2 Example. Shu

479446 V. Description of the invention (9) In addition, aluminum and silicon oxide, such as hafnium, are due to strong mechanical strength, and the coefficient is large. Therefore, the thermal expansion of Keri Temple is not used as the main material. For example, _〇4 is used to cover metal materials such as alloy steel such as quartz glass and alkali glass: rust steel, nickel material, etc., and the surface is covered with aluminum or silicon oxide. ”2 or ceramic coating, electric ore, steaming, or low-injection methods, etc. each = to make contact with the etching gas other than the shielding & component system 2 m. Aluminum is based on reactive reactive gas Oxygen radicals are more suitable for stable and stable aluminum oxide coatings. Xi ^: Hydrogen radicals obtained by chemically decomposing hydrogen to decompose silane Si / emulsion ^ It is also a stable relationship below the predetermined temperature, which is resistant to rat freedom. However, in the case of silicon oxide Si02, stainless steel is the main material and the cost is long. The relationship between the base and the money is not appropriate. The treatment process of the pair of rats from the rest of the present invention is not limited to the case where the resin film is applied to & it can also be applied to surface finishers such as rough surface processing. The present invention will be described in detail as shown in Figs. 1 (A) and (B). The jealousy of implementing the first method of the present invention is shown. (A) shows the state before the etching process is started. ~, Department of Etching

The processing chamber 17 is opened and closed by a door (not shown), which can be sealed—the path 19 is connected to a vacuum pump 18, and is connected by a valve 20, which is closed by closing the valve 20 inside the processing chamber 17 and closed. Opening and closing ;: Lice introduction tube. When the internal air is discharged, it can become a vacuum surrounding environment. A vacuum pump can be used. An etching gas is provided at the upper part of the inner side of the processing chamber.

\\ 326 \ 2d- \ 90-03 \ 89126199.ptd Page 12

The T section is provided with a heating platform 3. A plasma generation chamber 11 is provided in the etching gas supply unit 5, and the plasma generation chamber 11 is separated by a microwave transmission plate 14 up and down, and a raw material gas introduction pipe 2 is connected to the lower side of the chamber. There are connected waveguides 3 to j ^. The other end of the raw material gas introduction pipe 12 has a supply source connected to the raw material gas (not shown), and the other end of the waveguide 丨 3 has a microwave oscillator 丨 β connected thereto. With the inside of the processing chamber 17 as the environment, the plasma generated by the decomposition of the raw material gas into the pipe i 2 ion generating chamber 11 (free radicals). The reactive package flows out of the plasma generating chamber 11 and is used for the reactive active gas species to be processed materials flowing out and the shielding 4 is installed. The shielding 4 is an opening formed by using a fine hole 4a. The left and right ends are lightly tightened in the shielding frame 10 by using a tightening screw. The frame 10 is detachably installed.

For example, a vacuum surrounding ring of 1 3 3 P a provides a gas G for plasma formation, etc. When microwaves are transmitted from the microwave oscillator 16, reactive gas is generated when the gas G is used. The plurality of lower gas diffusion plates 15 to 1 are used for etching the resin thin film material F. The gas outflow port of the engraved supply unit 5 has a plurality of etching patterns as shown in Fig. 2 '. This shield 4 is shown in Fig. 3, and a tensioner 9 made of a shoulder spring or the like is installed in a tensioned or appropriately relaxed state. The heating outflow platform 3 that shields the gas flowing out of the famous insect gas supply unit 5 is provided in a state of being shielded 4 from the remaining time. This configuration is heated by the heater 8. The heat platform 3 of the gas outlet of the surface of the gas supply section 5 of the resin film monomer material F of the physical material has an embedded heater 8, and the 'Likou heat platform 3' is crimped to the surface 3a to form a circle. Arc-shaped quadratic element

479446 5. Invention Description αυ " Surface. At least the surface portion 3 of the heating platform 3 is constituted by a magnet. A heating platform 3 is configured to support and fix the lower platform shaft 23, and the platform shaft 23 is moved up and down by an actuator (not shown) to raise and lower the heating platform 3. An outer skirt 21 is attached to a side portion of the heating platform 3, and is moved up and down along a sliding portion 22 fixed to the processing chamber 17 side. The lower end of the sliding portion 22 is provided with a gap 30 ′ in the processing chamber 17 and air and reaction generated gas are discharged from the gap 30 to the pipeline 19 through the opening 3 丨. At the middle position where the gas-cut gas supply unit 5 and the heating platform 3 face up and down, 'on one of its ends (left side), a resin film monomer F (not treated material) is wound. The reel 1 and the conveying roller 6 and the sheet 1 roller 7 are provided on the other end (right side) with a reel 2 for rewinding the etched resin film single body F, and the conveying roller 6 and the tension roller 7. The reeling roller 1 and the reeling roller 2 are respectively detachably embedded in the driving shaft ′ so that the untreated portion of the resin film monomer material F is provided on the heating platform 3. Then, intermittent movement is performed to heat the resin sheet monomer material F on the platform 3 to complete the etching process, and while sending the etched portion out of the reel 2, a new untreated portion is pulled out from the reel 丨 on the platform 3 The above composition. ”° In the above-mentioned etching device, the material to be processed is the resin film monomer material F, which is etched by the following method. First, the inside of the processing chamber 17 is vacuumed by a vacuum pump 18. Then, as shown in FIG. 1 As shown in (A), after the resin film monomer F is placed between the reel 1 for reeling out and the reel 2 for reeling, as shown in FIG. 1 (B), the heating platform 3 is raised, and the

Up /

The top of the resin film monomer material F is densely piled up, but as above, when heated 4; the second is held lightly "or below the resin film F of monomer material F, # = meal /, the surface 3a is connected to the tree It is under the shadow 4. The upper surface of the thin cylindrical monolithic material F is tightly sealed in more detail. As shown in FIG. 2, the heating plane A > Surface 3a is made of resin thin cylindrical monolithic material F / ^ 2 One person's shoulder em :: material is crimped to the mask 4 to make the resin film single mask 4 tension. The mask 4 is to make the resin 4 film early body F act on the pressure P in the vertical direction of the surface 3a of the heating platform 3. Therefore, The resin film monomer material F is in a tense state, and there is no occurrence of host lines, etc., so that there is no gap between the shielding 4, the resin film monomer and the heating platform 3, and no gap is formed. 1. In this tight state, from The raw material gas guide pipe altogether supplies the plasma band forming body G, and the microwave of the microwave oscillator 6 acts on the plasma forming gas G'M to generate reactive gas species. Resin film monomer material f Reactive activity from the micropores for the etching of the mask 4 while heating by the heating platform 3 Progentiors etched. At this time, the shielding 4, the resin film, the heating material, and the heating platform 3 are in close contact with each other without forming a gap, and the etching gas does not enter the mutual gap. So only

The etching is provided in the portion of the resin film monomer material F of the opening pattern of the "micro holes for etching 4". After the etching process is completed, the plasma-forming gas G supplied from the source gas introduction tube 2 is stopped at the same time. , Stop the operation of the microwave oscillator 丨 6. Also, the heating platform 3 is lowered to the middle position shown in FIG. 1 (A), and becomes

479446 V. Description of the invention (13) The state of waiting for the next etching. In this way, the interface between the mask 4 and the resin film monomer F is only dense: the next "Nisshou" can easily separate the resin film monomer F because of the shielding system. Therefore 'off: minute' masking 4 shortens the cycle of etching. Jer 丨 The knife can be separated, and then the "reel 1 for reeling and the reel 2 for reeling can be rotated 2 times to roll up the resin film monomer material with a predetermined length after the engraving process. The next untreated resin is pulled out by the reel 1" The film single lake ^ owe the government to introduce ^ ..., repeat the above ... Although all the resin films on the reel 2 are rolled, the heating platform 3 is lowered to the position shown in Figure i: == 2 minutes and waited . In this state, 'the reel with the next unrefined new resin film monomer material F is replaced with an empty reel, with * = ground: J is wound around the resin film monomer material F which has been etched Repeat the above process with the coil after coiling iron. ^ As mentioned above, in the present invention, the thin film monomer F is sandwiched between the shielding 4 and the heating platform 3 in a vacuum-reduced vacuum surrounding environment, and the portion of the fine holes 44 for etching is therefore not It can be etched quickly and accurately by the conditions of the type of the resin, the special film, the through hole, or the through hole. Therefore, the freedom of processing can be expanded and the versatility can be improved. Further J Fig. 4 shows a device made in another embodiment that does not implement the first method. The engraving device is a masking type in the etching device shown in FIG. The continuous strip-shaped masking 4 is intermittently ejected from the left side while being sandwiched between the heating platform 3 and the etching gas supply unit 5.

\\ 326 \ 2d- \ 90-03 \ 89126199.ptd page 16 479446 V. Description of the invention (14) The structure of the reel 2 7 used for reeling to the right with the reel 26. The heating platform 3 is fixed at a certain height, unlike the etching device in Figure 丨, which can be raised and lowered freely. However, the left and right beating rollers 28 and 28 move up and down freely. The continuous strip-shaped mask 4 and the resin film monomer are crimped to the heating platform 3—the surface 3a of the το curved surface. The mask 4 is made of resin. The thin film single material F 'is a structure in which three of the heating platform surfaces 3a are in close contact with each other. Next, as in the device of FIG. 1, an etching gas is flowed to the surface side of the mask 4 as shown by an arrow. The surface of the resin film monomer F can be masked along the opening pattern of the fine holes 4 a along the mask: Of | worm carving. "The heating platform 3 fixed to a certain height is installed at the place by the outer skirt 29: inside the chamber 17. A gap 30 is formed at the lower end of the outer skirt 29. The air and gas inside the processing chamber are The opening 3 is formed from the gap 30 and the path 19. The f is closely connected by means of Lv, instead of the above-mentioned installation of the beating roller 28, as in the device of FIG. 1, the heating platform 3 can also be raised and lowered. Figure 5 (A) (B) is still another embodiment of the apparatus for implementing the first method, wherein (A) shows a state before the etching process is started, and (B) shows a state during the etching process. The etching apparatus is not The surface 3a of the heating platform 3 is formed into a two-dimensional curved surface and formed into a flat shape. The heating platform 3 is fixed at a certain height, and the resin film monomer material F is closely adhered to the surface by the tension rollers 7, 7 f. Move the shielding frame up and down, and close the shielding 4 to the heating platform 3 ^ surface 3a, so that the shielding 4, the resin film monomer material F and the heating platform 3 three are in close contact with each other. Keep this Close contact

Page 17 \\ 326 \ 2d- \ 90-03 \ 89126199.ptd 479446 V. Description of the invention (15) ^, as in the case and the device of Fig. 4, supply the silver engraved gas to the surface side of the shield 4 and follow the etching The resin thin film material F is etched by the opening pattern of the fine holes 4a. In the embodiments of Fig. 4 and Fig. 5 described above, the etching is performed with high accuracy without being affected by various conditions such as the type of the resin film and whether the penetrating hole is a through hole or not. In each of the above-mentioned main / applied forms, ′ is exemplified as a moon shape in which the material to be treated is a resin film, but it can also be applied to the engraving treatment of resin thin metal and laminated materials. When the stack is stacked, the railing platform is connected to the temple, and the shielding is closely attached to the resin film side. From the shielding processing ... In each of the above embodiments, the material to be processed is from m :: roll to the reel winding method. The situation is shown as an example, but is not limited to this, and a single piece may be used. It shows that Pei Zhizhi and other other implementations of the implementation of the method 丨 bear. The stop state Γ is set to the saki as shown in FIG. 1, and is further provided with a button-cut stop source 41 and a two-way beam splitter: 7 2 is provided with an infrared light coffee 7 ′ outside, and the control device shaft 44 is a fulcrum. Rotation, corresponding to the rotation L,:; = 4 ?! A single wavelength of a specific wavelength in the infrared of the light [first: = 53 throws light into the processing chamber 17. The light-emitting layer 46 formed on the upper area of the shield 4 is projected on page 18 \\ 326 \ 2d- \ 90-03 \ 89l26199.ptd V. Description of the invention (16) Pass the opposite window 45b and The light receiver 43 receives light. Light; 4 i ^ 扣 (C) is a light-emitting layer 4 6 that does not occur due to the inscription of gas. The hair material 2 and the material 4 are etched with a reactive reactive gas species R, and the reaction that occurs when the etching is processed generates a cloud-like layer of gas. The system is equal to == ^ AX i:] ^ m, net. When the reactive active gas species R out of the plasma generating chamber 11 is the oxygen radical, the reaction takes place, and the process of engraving: the combination of gases. Because in the upper region of the mask 4, the age from m inverse λ is generated, because * drawer 4A. Xi Gongzhi has two wavelengths of light " 1 " 1 thickness of the hair layer 46, the color of the hair layer 46 is a light in the ultraviolet region of the light region, the force can be seen, the wind direction is visible peach Purple light. The first visible light is usually the mixed gas that emits purple or light-emitting layer 46. It only absorbs special light. The higher the concentration (occurrence), the longer the absorption life, mf, and A? ^ Cl ^ M. First. Therefore, when 稜鏡 42 is left and right, when the wavelengths are split at the same wavelength, it can be detected by the receiver 43, and can be detected from the reaction path of the 46th, B ,, and 66th floor. The occurrence of gas. Although the etching process shows the initial state shown in FIG. 7 (c) as shown in FIG. 7 (A) and FIG. 7 (B), there is a relationship between the amount of occurrence and the decrease. Compared with the photoreceptor = Reaction generated gas The amount of reaction generated by the reaction gas = === π and especially 4 were detected. Page 19 89126199.ptd 479446 V. Description of the invention (17) is input to the control device 47, from The control device—the driving part of the opening and closing valve of the tube 12 and the microwave oscillator 丨, introduces the source gas and stops the etching. Signal from the drive unit wheel As described above, the etching stop device 40 uses an infrared octave reaction to generate a drastic reduction in the amount of gas generated: knife analysis to detect the stop of perforation easily and accurately. In addition, two = relationships, which can stop the sudden detection of the amount of gas generated by the reaction and stop the so-called basis. It is not limited to stop the etching while detecting the droop, ^ A means stop the etching at a certain time after the time out ^ 3 The reduction test usually means tens of seconds. At a certain time, in each of the aforementioned devices of FIG. 1, FIG. 4, and FIG. 5, due to the relationship between the dead means 40, the sharp decrease in the reaction generated gas cannot be detected automatically. However, if a peeping window (not shown) is provided on the side wall of the processing chamber 17, the relationship between the decrease in the amount of the reaction gas Gx generated can be confirmed with the naked eye, and the last name can be stopped by visual confirmation. Fig. 8 illustrates an apparatus for carrying out the second method of the present invention. In the embodiment, in the apparatus shown in FIG. 1, a resin film F X of a material to be processed is superimposed, and a different resin film F X capable of generating a gas different from the resin film monomer ρ can be engraved with a gas name. Therefore, one side of the reel 1 for discharging the unprocessed resin film monomer F is provided with a reel 47 for winding the dissimilar resin film Fx, and the resin is provided after the winding process. On one side of the reel 2 for winding the film single material F, a reel 48 for winding the dissimilar resin film Fx after the winding process is provided. The reel 47 and the reel 48 are respectively separated from the reel 1 and

89126199.ptd Page 20

The winding reel 2 is driven synchronously and intermittently, and is configured to be conveyed on the platform 3 of the resin film single material F of the material to be processed. The bottom of the dissimilar resin film Fx is installed in the heating device, and the body silver engraving is also performed in a vacuum environment. In other words, each other can participate in the business field + Π material and the heterogeneous resin film Fx are shielded by the micro holes 4a gas ㈣ side-between: h3 'misaligned by the type of resin film for silver engraving and the hole or not Because of the lack of the above-mentioned processing, it is possible to execute the palpitations without speed and accuracy ... The shadow of the condition can be illustrated in FIG. 9 as an example to implement the second state of the present invention. Other embodiments of the method device

This embodiment is for the device means 40 of FIG. In the apparatus of FIG. 9, the relationship between the resin film F of the material to be processed 10 (A), (B), and (C) is the initial state of the initial etching, and (β) indicates that the different resin film F is initially etched. The state of χ is “provided with the same etching stopper as in FIG. 6”, and a heterogeneous resin film Fx is superimposed on the gas etching process according to the drawing. In other words, Fig. 10 (A) shows the final state, and (C) shows the opening of a heterogeneous resin binding film FX instrument for extension. A Wenyi Zhitian Shake μ, i is enough to produce a resin different from the material being processed. A thin film of resin that reacts to form a gas. For example, like

J is the resin film monomer material F is poly

In the case of '', a polyvinylidene chloride containing chlorine is used, and I == just as the heterogeneous resin film Fx. In the initial state of exhaustion of the silver engraving process and the final state of FIG. 10 (B), due to the relationship between the etched resin and the film unit F, the receiver inspection wave of the 4G etching stop means

479446 V. Description of the invention (19) The reaction generates a gas G], a specific wavelength of G2; ^, and 2 appears again. However, at the time point when the heterogeneous resin film of FIG. 10 (C) was etched, as shown by the dotted line, the specific wavelength of the reaction gas (; 3 appeared eight, the specific wavelength appeared; L !, Enter 2 sharply reduced.

When the heterogeneous resin film FX is not overlapped, and when the resin film monomer F is etched separately, the film cross-section system changes as shown in FIGS. 7 (A), (β), and (c). Therefore, in the initial state of FIG. 7 (A) and the intermediate state of (B), as shown by the solid line in FIG. 12, the inverse occurs from the resin film monomer F:,, a specific wavelength \, Λ2, followed by [shown at the end of Fig. 7 只有, only the aforementioned specific wavelength λι, 'and "decreased sharply," and the wavelength λ3 will not appear. 忒 Special wavelength; 13 appears based on heterogeneous resin film & The reaction of the resin film monomer material F to generate gas, x ”should generate the relationship of gas G3, therefore, etch 蚀 2 12 is different, and vice versa, n 3 mu Fantian etching stops this means 4 f) Evening-43 When the above situation is detected, by controlling the opening and closing of the introduction tube first, stop the microwave material gas operation. According to the detection of the reaction gas Gx group, the time point for stopping the etching operation is, Any time after detecting the shock of the sudden change π J and stopping the eclipse… Stomach for a certain period of time: after, the figure 8 9 of the stop means 4 〇 is not set to §. The reaction generated gas Gx is detected. The composition of the light-emitting layer 4 6 when the autumn and autumn cannot automatically grow λ3. Become / Tian, heart stopping etching a specific wavelength. 'See with the naked eye and which may be of the above-described apparatus of FIG. 8 and FIG. 9 is the place of the heating surface type flat eight children of germination Ϊ page 22 89126199.ptd

: ,,, Platform 8 is also available. About the 4th generation of continuous belt-type masking The use of a single chip instead of a coil is used to mask the effects of the 4 series and the processed media. In other words, chromium Cr and other catalysts / tongue gas species (oxygen free radicals, etc.) are combined, which has a relationship with reducing the perforation speed of the gas species, which is non-catalyst A], which can prevent the reduction of perforation speed.

Γ piece :: Placement :, is it possible to replace the plane type shown in Figure 5? ： 4 is also shown in the second to the second volume as shown in Figure 4 ：：： The delivery method is also to implement the gas fabric; ： Make use of Ξ! = State: Because of ', the most susceptible: to enter the plaque Such as nickel Ni, iron Fe, two genus "constitutes the day, the reaction of the etching gas" 2 by the existence of radicals, fluorine free radicals, chlorine free two% of the concentration of tongue gas species. However, the result of the composition of materials with reactive activity or emulsified SiO2f is low. 0 = = 'Aluminum and other systems are not only at normal temperature, such as at temperatures above 200 degrees Celsius. The relationship between reduction and large thermal expansion is directly problematic as the structure is used. Therefore, the main material is a metal material 'glass material or ceramic material which is superior in strength and thermal expansion, and aluminum A 丨 and silicon oxide § 丨 are preferably used as coating materials on the surface of the main material. Also, regarding the components constituting the device such as a heating platform other than the shield, it is preferable to use a stainless steel sus containing nickel Ni, iron Fe, chromium Cr, etc. at a ratio of 吕. This is because the Shao system forms a chemically stable and fine-grained alumina A 12 03 film on its surface due to oxygen radicals. When the coating of the alumina is below a predetermined temperature, it is stable to hydrogen radicals or fluorine radicals, and therefore has long-term resistance.

Jade, description of the invention (21) Fig. 13 shows an example of a device using the pair-tree method in the first embodiment of the present invention. The foil is a phosphine-laminated metal foil having an opening pattern for etching, and the metal is formed with an opening pattern for etching. This laminated material Fa system portion 5 is connected to the heating platform 8 in a vacuum surrounding environment by supplying the resin thin shovel side and the moor side on the opposite side with respect to the etching gas. Completed in this state. -Features of the metal foil side of the engraved laminated material Fa. As mentioned above, it is a function without a special pattern for shielding. By the name = and :: the metal box has the relationship between the opening for etching and the above-mentioned various defects, such as the resin film, such as a through hole Or not, etc .: of the conditions: = tree "type f penetrating hole for the moment., ~ Θ 'can run quickly and with high precision materials: such as :: Li is a box system that is very easy to get oxygen free radicals The oxidized without contact:; =: ΐ: Γ 亍 will not be immersed in silver by oxygen radicals, Figure 14 is a question-! Or gold evaporation, etc. is suitable. ~ Page inconsistent application of the third method of the present invention Other embodiments of the device are those in which the structure of the device shown in FIG. 13 is provided with a stop device 40 and the amount of structure is reduced ^ < The device of FIG. 6 detects the occurrence of the reaction generated gas and controls the device. The stop of the etching operation can be easily and accurately performed. Fig. 13 and Fig. 1 show that the dream stop device is not provided with the etch stop device 40. However, as described above, "the visual inspection is used to detect the occurrence of the reaction gas Gx.

479446 V. Description of the invention (22) The result of the subtraction can stop etching. As with the aforementioned device, the devices of FIGS. 13 and 14 are also used instead of the two-dimensional curved surface heating platform 8. The planar heating platform 8 shown in FIG. 5 can be used to change the processing method of the material to be processed into a single unit. The sheet type can also be used instead of the reel-to-reel winding method. Further, in the apparatus of Figs. 13 and 14, a reel 47 and a reel 48 for winding may be used, and the resin film F X may be engraved. The gas generated by the reaction of the membrane Fx is -port 0, as shown in the device of Fig. 8. When the laminated material F a that scatters the material to be treated overlaps, it is detected that the composition of the thin resin is different to stop the gas etching, as described above. According to this issue? 丨 helmet | empty :? 丨 ★ πmale. The type or desired of the solar barrier film | The worm-etched hole is shell perforation or not, etc., which affects the degree of etching, so it can be used universally. The high-etching person is quick and precise. During the etching, the reaction is detected to stop when the amount of radicals exceeds the predetermined value, and the body hair is I, and the stop of the perforation should be controlled properly and correctly. In the case of gas etching, the type of gas can be easily reduced, and when the reactive activity of the non-catalytic material to the etching gas is prevented, the reduction in the perforation speed of the device constituting the device such as the reactive shielding of the etching gas can be prevented. '' Recombination of sex gas species (Example 1) Using the etching device of FIG. 1, the following is based on a polyimide with a thickness of 50 m. The physical conditions are to use oxygen free limited company products & quot Ubilex ") Implementation of $ monomer material (Ube Kosan has processed polyimide film monomer ion etching after treatment. __ is the opening for masking etching 479446 V. Description of the invention (23) The diameter is 5 0 // m, and the diameter of the upper diameter is 6 0 // m, and most of the tapered through-holes with an average taper angle reduced by 17 degrees on the lower side in the radial direction are obtained. The unevenness of the above diameter is less than 10% of the target diameter plus or minus. At the same time, the inclination angle of the hole wall is also within the range of 15 to 45 degrees of the target, which is suitable for practical people. Moreover, all the perforations penetrate No residue can be seen at the holes. [Treatment conditions] Metal shielding: 50 // m thick stainless steel SUS304 plate etching opening diameter 5 0 // m Installation tension 1.5kg φ Heating platform: curvature radius of surface 800 mm Heating temperature Celsius 2 0 0 degree processing time (time until the hole penetrates) 10 minutes Microwave output: 1. 8 kw Gas for plasma formation: Supply 100 ml / min of oxygen and 100cc / min of water vapor. Vacuum degree of surrounding environment: 133Pa (Examples 2 to 6) Except for the diameter of the opening for etching It is 7 5 // m, 1 0 0 // m, 1 5 0 / zm, 200 // m, 250 // m except for the five kinds of metal shielding, the rest are the same conditions as in the implementation of Example 1 for the same The polyimide film monomer material is etched (Examples 2 to 6). The unevenness of the diameter on the polyimide film of any of Examples 2 to 6 is at the same time when the target diameter is increased or decreased by 10% or less , The wall of the hole is inclined

\\ 326 \ 2d- \ 90-03 \ 89126199.ptd page 26 479446

V. Description of the invention (24) The angle is also within the range of 15 degrees to 45 degrees of the target, which is suitable for practical users (Examples 7 to 17). In the etching device of FIG. 1, each constituent member is formed by the following materials, respectively. Using the following processing conditions, oxygen radicals were used to plasma-etch the polyimide film monomer material (product of Ube Industries Co., Ltd.) Ubis from a thickness of 50 to form through-holes. Here In the etching process, the combination of the shielding and shielding frame, the heating platform, and the gas diffusion plate is changed from the side of the material used, as shown in Figure 5 (^ 台 台 召 召 u) ~ u) various changes (Examples 7-17) ) To investigate the dependence of the etching bucket. The measurement results are shown in Figure 15. X 之 材 X

In addition, the above (a) ~ (k) show that the etching with the distance between the two dragons is used to form the mask made of the following materials: z == ι (at the speed of the engraving, and the mask of (a) is [ Components of the device for a long time] Nothing shows in the afternoon. Microwave transmission plate 1 4: Quartz broken glass material gas introduction pipe 1 2: | Lu Cai etching gas supply unit 5: Aluminum shielding frame 1 0 • Aluminum gas diffusion Plate 1 5: (1) stainless steel SUS304 (2) aluminum heating platform 3: (1) stainless steel SUS304 (2) chain material

479446 V. Description of the invention (25) Shield 4: (a) Stainless steel SUS 304 (18% Cr + 8% Ni + 74% F e) material (Example 7) (1)) with a thickness of 50 / zm is 5〇 // 111 stainless steel 81] 8 430 (12 ° /. (^ + 8 8%? 6) material (Example 8) (c) Nickel alloy (36% Ni; 64%) with a thickness of 50 / zm Fe) material (Example 9) (d) The material of the above (1) is spray-plated to a material of SiO 2 of 1 / m (Example 10) (e) The material of the above (a) is spray-plated. · 1 // m of aluminum (Example 1 1) (f) Spray coating of the above (b) material 0 1 // m of Si02 (Example 12) (g) of (b) Material is sprayed to an aluminum material of 0.1 m (Example 13) (h) to the material of (c) above is sprayed to a material of 0.1 m to si (Example 14) (i) to the material described above (C) The material is sprayed with 0.1 · m // aluminum material (Example 1 5) (j) quartz glass material with a thickness of 1 2 0 # m (Example 1 6) (k) The thickness is 120 / / m of glass inspection material (Example 17) [Processing conditions] Vacuum degree of vacuum environment: 199.5Pa Gas flow for plasma formation: 1000 m 1 / min Heating temperature Raw material microwave output 250 ° C oxygen and water Steam 2kw ( Large 5kw) clear from the results shown in FIG. 15, the material does not contain Ni etching iSUS43〇

89126199.ptd Page 28 479446 V. Description of the invention (26) The speed is 2 times that of SUS304 material containing 8% Ni. This is the SUS3 04 material and the SUS430 material system are formed with a fine Cr203 coating, which prevents the oxidation of oxygen free radicals inside the shielding material and prevents the consumption of oxygen free radicals, but the film of SUS304 contains a catalyst The relationship between Ni is [〇] + [〇] —〇2, and the binding reaction is near the shielding and inside the shielding hole, reducing the relationship of effective oxygen radicals. Compared with stainless steel SUS3 04 material, the nickel alloy steel content containing about 5 times Ni is equal to or less than about 1/3. This is because the oxygen radical has a large amount of Ni content as a catalyst for recombination before the substrate is etched, so it does not have a fine Cr2 03 immobile film formation that prevents the internal oxidation from proceeding. When blasting the stainless steel SUS304, SUS430, and nickel alloy steel, the two surfaces are covered. These can achieve an etching speed about the same as that of the uncoated W material. This is because, as a result of using a catalyst that has no catalyst effect, it can prevent the recombination of oxygen radicals. = When spray coating is used to coat stainless steel SUS304, SUS43〇, and nickel alloy steel :: s1〇, the etching speed can be about 3 times higher than that of uncoated coffee. ~ ^ = 是 ： For ‘gj, use silicon oxide without catalyst effect on the above button. The reason is that the effect is slightly larger than that of non-metallic quartz glass materials. The reason is that the quartz glass materials or alkali glass materials that are flexible and porous due to the spraying of extremely thin films are available. 10 times the package

47 ^ 440 V. Description of the invention (27) Etching speed of SUS304 material. & ^ Wί The maximum etching rate can be obtained when the aluminum or teflon glass is used for the shielding of the glass material or the alkali glass material, but when the gas ^ ^ ^ ^ ^ is changed to a SUS304 material, the etching speed is reduced. half. This is the relationship between the reduction in the concentration of oxygen free radicals generated in the special ion chamber 11 due to the catalyst action of the gas dispersion plate made of SUS304. # -5'So the oxygen free radicals for the etching when "ΐϊίίΐ" this ::: 丄 In the final state of the engraving, the relationship of oxygen free radicals, oxygen free ": η: the Taiwan system is not directly in contact with the engraving, ρ by ^ 4 from ^ ff for effective action and high-speed implementation of famous insects contact, sus3 catalyzed by the susceptible material (Examples 18, 19). Management: ϊ: = the device to remove the shielding 4 The device in Fig. 13 is as follows in Example 19). Jiang Zhi's material to be treated (Examples ⑻ and ⑵) (as a result, the material to be treated (1) is 5 minutes and 12 minutes, and runs through.) "H: f The material to be treated is the same as in Example 1, and the diameter, month, and diameter are equal to or less than 1 on the same day. The inclination angle Λ of the hole wall is equal to The addition and subtraction of the target diameter _ The practical oblique angle is within the range of 16 to 45 degrees of the target [processed material] Page 30 89l26l99.ptd

III 479446 V. Description of the invention (28) Material to be processed (1): Aluminum foil with a thickness of 1 0 0 // m through-holes on a predetermined plate surface, and a thickness of 50 // m Laminated material (2) of imine film (product of Ube Industrial Co., Ltd. π Youbilex π): the thickness of the through hole with a diameter of 1 0 0 // m is provided on the predetermined plate surface 20 // m SUS304 foil, and a laminated material with a thickness of 50 / m of polyimide film (product of Ube Industrial Co., Ltd. H Youbilex π) [treatment conditions] Heating platform: surface curvature Radius 80 0min Heating temperature: 200 degrees Celsius Microwave output: 1.8kw Gas for plasma formation · Supply 100Occ / min of oxygen and water vapor 10 0 cc / min Vacuum degree of vacuum surrounding environment: 133Pa Industry The above-mentioned dry etching method and device using a variety of effective resin films are available. In particular, it is useful when the surface of a resin film used for a flexible printed circuit board is subjected to gas etching. Yuan · Noodle Farmer Owner 1 Spreading Reel 2 Reeling Reel 3 Heating Platform Heating Platform Surface

479446 V. Description of the invention (29) 4 Shield 4a Fine holes for insect engraving 5 MH engraving gas supply unit 6 Transport roller 7 Tension roller 8 Heater 10 Shielding frame 11 Plasma generation chamber 12 Raw material gas introduction tube 16 Microwave oscillator 17 Processing chamber 18 Vacuum pump 19 Tubing 21 Outer skirt 22 Slider 23 Platform shaft 26 Spreading reel 27 Winding reel 28 Jumping roller 29 Outer skirt 30 Gap 31 Open V 40 ik Engraving stop device 41 Infrared light source

\\ 326 \ 2d- \ 90-03 \ 89126199.ptd Page 32 479446 V. Description of the invention (30) 42 稜鏡 43 Light receiving 44 Shaft 45a 5 45b Window 46 Luminous 47 Spread 48 Rolling F Resin Fa Laminated Fx Heterogeneous G Plasma Gi, G2, G3, Gx R Reaction T Tension P Reel film for pressure device layer Reel film Monomer material Resin film body formation Gas reacts to generate gaseous reactive gas species

\\ 326 \ 2d- \ 90-03 \ 89126199.ptd Page 33 479446 Brief description of drawings Figures 1 (A) and (B) show that in the implementation of the jth method of the present invention, U) means the etching process is started A longitudinal cross-sectional view of a state in a previous state. Mouth is etched. Figure 2 is a magnified vertical view of the main part of the device shown in Figure 丨. Longitudinal section view of the device The other method of the first method of implementation is to show the implementation of the first method of the present invention is still another implementation = the main part of the device of the heart, where is the longitudinal section view of the money carved state, (B) is a longitudinal sectional view of the state in which the surname is being engraved. Fig. 6 is a longitudinal cross-sectional view showing an apparatus formed by carrying out still another embodiment of the method of the present invention. Fig. 7 is a longitudinal sectional view showing a portion where gas etching is performed by the method of the present invention, wherein '(A) is a state at the beginning after the initiation of engraving, (B) is an intermediate state, and (c) is a state at the end of the state. Fig. 8 is a longitudinal sectional view showing an apparatus for carrying out the second method of the present invention. Fig. 9 is a longitudinal sectional view showing another embodiment for carrying out the second method of the present invention. Fig. 10 shows a portion where gas etching is performed in a device that does not implement the second method of the present invention, where "(A) is a longitudinal sectional view of the state after the beginning of etching" and (B) is a longitudinal sectional view of the final state. (C) A longitudinal sectional view showing an etched state of a resin film different from the material to be processed. Fig. 11 is an explanatory diagram showing a peak formation state of a reaction-generating gas in an apparatus for carrying out the second method of the present invention.

P.34 479446 Brief description of the diagrams Fig. 12 is an explanatory diagram showing a peak formation state of a reaction generated gas in an apparatus for carrying out the first method of the present invention. Fig. 13 is a longitudinal sectional view showing an apparatus for carrying out the third method of the present invention. Fig. 14 is a longitudinal sectional view showing another embodiment of the apparatus for carrying out the third method of the present invention. Fig. 15 is a graph showing the etching speed when the materials of the masking, heating platform and gas diffusion plate of the etching apparatus of the present invention are changed.

\\ 326 \ 2d- \ 90-03 \ 89126199.ptd page 35

Claims (1)

6. Scope of patent application 1 · Dry etching of a resin film ^ ^ A film monomer material and laminated gold on resin film: 2: Second: Use resin thin as the material to be treated, and the treatment = any one of the laminated material The side is closely connected to the heating platform, while in the state of the '-side', the surface is masked with an opening pattern. At the same time, the surrounding environment is formed with a rice carving, and the 恶 ^ 妾 -like evil is confronted from the side, while the real person. w Treat the material to be gas-etched. 2. If the resin in the scope of the patent application is applied, the above-mentioned heating platform is configured as a dry etching method, fixed in a certain position, and the other side will be moved to cover the cough. The processing material is rejected and the heating platform is moved to the material to be processed, and the material and the heating platform are closely shielded from each other and processed. 3. If the scope of patent application is the first! Or the resin method of 2 items, where the former in the gas button engraving ;: = stop when the value is greater than the predetermined value, the occurrence of a radical change to the pre-film 4 monomer type, which includes: the resin thin film side of the table: r pairs The surface of the heterogeneous resin is tightly formed with a seal for opening and closing: ^: At the same time as the side of the material to be treated, it is shielded around the vacuum p ^, and the sealed state is maintained by gas. The following applies to the material to be treated. 5. If the dry film engraving method of the resin film in item 4 of the scope of patent application, 89126199.ptd page 36 6. The scope of patent application is solid: :: = :: = flat: = In order to move the other-aspect ', the aforementioned shielding material is moved and the aforementioned processed material 2 is connected to 3 =; before; the heterogeneous resin film is moved. The material to be treated, the heterogeneous resin film, and the heating platform are closely adhered to each other. 6: = Special: The resin film in the range of item 4 or 5 is used to engrav the name from the aforementioned masked name in the remaining body. The composition of the body is detected, and when the composition is released, the gas etcher is stopped. There are 7 cases of dry etching of a resin film, and a metal box with an opening pattern for engraving is laminated on the resin thin layer 2: the surface will be formed with: a heating platform is in close contact with the surface of the material to be treated on the 4M side of the laminated material, Resin that maintains the tight contact state 8. The tree engraved by Rushen Xuan Patent No.7. Among them, in the gas etching, the amount of gas generated from the reaction method of the foregoing metal is detected, and the gas etching is stopped when the above-mentioned predetermined value is released by the 2nd company. The amount of μ will change to 9. The range cap! The dry silver engraving method of grease film, in which the tree surface of your item among I 7 and% members is formed into a convex two-dimensional curved surface. Up to heating flat mouth according to the table for house use 10 · For example, the dry etching method of resin film in the scope of patent application Nos. Ϊ, 2, and 4; ] Method, in which the aforementioned son of gas silver engraving method M 89126199.ptd p. 37 1/6. The scope of patent application is as thin as any of the items 2, 4, 5, 7 and 8 of the scope of patent application: This constitutes a dry etching device for a resin film, which includes: a processing chamber capable of making a vacuum inside (7); S an etching gas supply unit (5) provided inside the processing chamber. The gas flow covering the # 刻 气 supplying part can form a mask (4) with an opening pattern for etching; and the sad girl can be movably installed in the processing chamber. The heating platform (3) is closely connected to the resin platform. (3), the opposite. ; In the resin set connected to the above-mentioned treated material, item No. 1 of the patent claim] item 2, which includes: dry etching of the film-seeking film is installed in gas etching, and the amount of gas generated from the aforementioned shielding reaction is detected According to the detection signal # of the detection device, the device released by the opening is set to (40), and the device is stopped. J. Etching of gas etching 14.-A dry etching of a resin film can make the inside of a vacuum processing chamber (17). It contains ... "The interior of the processing chamber is provided by Yuhong" (U etching gas supply unit · to Cover the etch body supply part (K5), and install it in a state where the #etching opening pattern is used to shield (4) the mouth, and it can be installed in the aforementioned processing room (⑺ 一 的 Heating Platform 89126199.ptd 38th) Page 6 、 Scope of patent application (3). Second, the heating platform is closely connected to the resin film of the material to be treated, and the gas is different from the resin film's single material; The tree mask is different from the masking (4), which is in close contact with the material to be treated. The dry installation of the tree mask in the range of item 14 is reversed =: group = ΐ (二 之 ^ and 乂 < With the detection device (40) measured by Caishuang, stop ΐ ί 测 咸 咸 咸 ί ί 咸 ί ί ί ί ί 咸 detection signal and stop the aforementioned gas etching etch dry type for the remainder of the installation of the second benefit: Zhongwei in the second to second / Ren-item The resin film ^ The daughter body generating chamber (11) is provided with a carved gas supply unit (5). From 17 · The patent Section [FL Chu 1 β s home, where the use of the plasma from: etching a thin film lipid wide dry non-reactive species reactive gas to contact a Λ of the effluent gas 18. If the material in the 17th scope of the application for patents constitutes one of the aforementioned shielding (4), in which any of the foregoing non-contact ΛΛ, resin film dry type 1 engraved porcelain materials, aluminum L $ material is used for metal Materials, glass materials and 19. A resin film that is deaf or / or chemically coated. The interior can be made into a dry etching device, which includes a processing chamber for making a vacuum inside the processing chamber, and a gas supply section (5) at the time of P; and 21 · A dry-type etching device for a resin film according to item 19 or 20 of the scope of the patent application, wherein a plasma generating chamber (11) is provided in the aforementioned etching gas supply section (5). Yin happened