WO2001033233A1 - A closed-loop magnetoresistive current sensor system having active offset nulling - Google Patents

A closed-loop magnetoresistive current sensor system having active offset nulling Download PDF

Info

Publication number
WO2001033233A1
WO2001033233A1 PCT/US2000/029443 US0029443W WO0133233A1 WO 2001033233 A1 WO2001033233 A1 WO 2001033233A1 US 0029443 W US0029443 W US 0029443W WO 0133233 A1 WO0133233 A1 WO 0133233A1
Authority
WO
WIPO (PCT)
Prior art keywords
sensor
output
amplifier
magnetoresistive sensor
modulator
Prior art date
Application number
PCT/US2000/029443
Other languages
French (fr)
Inventor
David A. Sandquist
Dale F. Berndt
James E. Lenz
Original Assignee
Honeywell Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honeywell Inc. filed Critical Honeywell Inc.
Priority to EP00973859A priority Critical patent/EP1224477B1/en
Priority to DE60041707T priority patent/DE60041707D1/en
Publication of WO2001033233A1 publication Critical patent/WO2001033233A1/en

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R15/00Details of measuring arrangements of the types provided for in groups G01R17/00 - G01R29/00, G01R33/00 - G01R33/26 or G01R35/00
    • G01R15/14Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks
    • G01R15/20Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices, i.e. measuring a magnetic field via the interaction between a current and a magnetic field, e.g. magneto resistive or Hall effect devices
    • G01R15/205Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices, i.e. measuring a magnetic field via the interaction between a current and a magnetic field, e.g. magneto resistive or Hall effect devices using magneto-resistance devices, e.g. field plates

Abstract

A magnetoresistive sensor system having resistive elements changing in ohmic value in the presence of a magnetic field of a current being measured. The variant values of the elements are amplified by some electronics that inherently add offset to the resultant values. The elements themselves also add an offset. The output of the electronics is modulated and then buffered as an output. This output is demodulated and integrated. The resultant signal is fed back to the input of the electronics to null out the offsets. The output of the buffer also goes to an inductive coil that is magnetically coupled to the resistive elements to null out the magnetic field from the current being measured. The buffer output indicates the magnitude of the current being measured. An oscillator outputs a signal to actuate the modulator and the demodulator. The oscillator signal also goes to a set/reset circuit for setting and resetting the resistive elements of the magnetoresistive sensor.

Description

A CLOSED-LOOP MAGNETORESISTIVE CURRENT SENSOR SYSTEM HAVING ACTIVE OFFSET NULLING
The invention pertains to current sensors and particularly to magnetoresistive (MR) current sensors. More particularly, it pertains to MR current sensors having low offsets.
SUMMARY OF THE INVENTION The present current sensor is a closed- loop, non- contact, fast-responding, wide-bandwidth, field nulling current sensor. This sensor reveals parameters equivalent to other closed-loop approaches such as the closed loop Hall effect current sensor in the related art. It is the use of the MR sensor having a set/reset and offset nulling loop that leads to ultra low offsets and ultra low offset drifts over all conditions in current measurement. It also has very low offset drift over wide ranges of operating temperatures. Because of the ultra low offset, the sensor provides very accurate measurements of current. It has an auto-zero offset reduction circuit, which has a separate feedback path to remove offset and offset drift from the circuit. The magnetic signal and offset signals are driven to their respective nulls by independent feedback loops. The offset feedback loop is not used in Hall effect type current sensors. The transient noise and spikes caused by the set/reset circuit are greatly reduced with this new feedback scheme. The sensor has a frequency response from DC to over 150 kHz and has a response time of less than one microsecond.
BRIEF DESCRIPTION OF THE DRAWING Figure 1 is an illustration of an MR closed loop current sensing system.
Figure 2 is a functional diagram of the MR current sensing system.
Figure 3 is a schematic of the MR current sensing system.
DESCRIPTION OF THE EMBODIMENT An overview of a closed loop MR current sensor system 10 is shown in figure 1. Input primary current 12 can be in a conductor having one to N turns, where N can be any practical number. The magnetic flux 86 from current 12 of the primary current carrying conductor is concentrated by a high permeability core 26 and dropped across a gap 17 to produce a magnetic field 86. An inductive feedback or rebalance coil 25 produces a magnetic field 99 to oppose magnetic field 86. MR die 11 senses the difference between magnetic fields 86 and 99. The output of MR die 11 is amplified, among other things, by an electronics loop 91, which includes an operational amplifier electronics 30, demodulator 31, buffer amplifier electronics 32, set/reset circuit 90, modulator 36 and integrator 37. Electronics loop 91, along with coil 25, drives magnetic field 86 in gap 17 to a null value with a magnetic field 99. A path 97 provides set/reset signals to MR die 11. Circuit 90 sets and resets or rotates the magnetic vector of MR die 11 180 degrees at a 1 kHz rate. This technique is used to produce an ultra low offset current sensor 10. Gap 17 is small relative to the core 26 cross-section and length to provide better accuracy and improved shielding from stray external magnetic fields.
A conceptual layout of MR sensor system 10 is shown in figure 2. System 10 has an anisotropic MR Wheatstone bridge 11 next to a conductor (s) carrying a current 12 that generates a magnetic field 86. This magnetic field is typically concentrated across MR sensor 11 through use of a magnetic core 26. In figure 3, MR sensor 11 is comprised of four Permalloy (NiFe) resistors 13-16 that are connected end to end, and the magnetic field 86 (B) of current 12 and 99 of rebalance coil 25 Changes the resistance of resistors 13, 14, 15 and 16. In the set/reset process, a high current (unrelated to the current being measured or the current being fed back) pulse is sent through the set/reset strap by a MOSFET driver 78. This "sets" the magnetization of the Permalloy in one direction such that a positive magnetic field (generated by the conductor or feedback coil or any other field source) will cause the resistance of two resistors to increase and the other two resistors to decrease. If a pulse of equal amplitude but opposite direction is then sent through the set/reset strap, this is a "reset" condition and each resistor will change resistance opposite to the set condition. The set/reset process and the magnetization of the Permalloy are independent of the conductor with current that is being measured. Resistors 13 and 15 increase in resistance for a first direction of current 12 flow and resistors 14 and
16 decrease in the set condition. For the first direction of current 12 flow, resistors 13 and 15 decrease and resistors 14 and 16 increase in resistance in the reset condition. The resistance changes are proportional to the magnitude of the current 12 flow. KB
17 is a transfer function inherent to sensor 11. Function 17 represents the effect of the magnetic field 86 of current 12 (and the field 99 generated inductive feedback coil 25) on the resistors of sensor 11. Modulator or multiplier 18 of figure 2 is where the set/reset signal comes to sensor 11 from an oscillator 20. The signal is a one kHz square wave 21. The signal may be another kind of signal and/or have a different frequency. Summer 19 conceptually represents the superposition of a VDffi (MR offset voltage) to an output signal of sensor 11. KA 23 represents the transfer function for a gap in core 26, which may be given in ampere-turns a device having Nx 24 turns in the first winding, which is the current 12 carrying wire. N2 25 represents the number of turns of the second winding (inductive feedback coil), which couples the negative magnetic feedback (99) to sensor 11. The feedback coil has about 1000 turns. The magnetic core superposes the magnetic fields (99 and 86) from the feedback coil 25 and the current 12, therefore it is represented by summer 26.
The output of sensor 11 goes to a summer 27 which adds an offset V0ff 28 of the operational amplifier electronics 30 and the voltage offset feedback to the output signal of sensor 11 to cancel the offsets. Kc 29 represents the transfer function, such as gain, of the operational amplifier electronics 30. The output of electronics 30 goes to demodulator 31 to be demodulated. Items 46-49 are actually a part of demodulator 31. An input signal 21 from oscillator 20 sets the demodulator 31 frequency. The demodulator sensor signal goes on to KD 32, which is the transfer function of the final operational or current buffer amplifier electronics 32 for sensor system 10. It has a large gain at DC and rolls off at above 1 kHz. The output goes to a transfer function 33 of the inverse of the sum of the load resistance RL 34 of system 10 and the inductive impedance
(Rind + jωLind) of winding or coil 25. Znd = (Rind +
jωLind) , where Zind is the impedance of the inductive
feedback coil which is the sum of the inductive coil's
resistance (Rind) and reactance (jωLind) where Lind is the inductive coil's inductance. The output of the current sensor is given in current and is typically run through a load (RL) to measure a voltage out. An offset feedback signal from output 35 goes to a modulator 36. This offset feedback signal could also come from the output of 33 (tied after 32 on the schematic) . Signal 21 from oscillator 20 actuates demodulator 36. The de-modulated offset feedback signal goes to an integrator 37 that provides the integrated voltage offset feedback signal (DC) to summer 27 of operational amplifier electronics 30 with the modulated signal level at about 1 kHz filtered.
Figure 3 is a schematic of sensor system 10. Sensor 11 has the Wheatstone bridge of resistors 13-16, connected end-to-end as described above. The bridge outputs go to the inverting and non- inverting inputs, respectively, via conductors 93 and 94 and 4.02K ohm resistors 39 and 40, of differential amplifier 38 of operational amplifier electronics 30. A 40.2 K ohm resistor 41 connects the non-inverting input to ground, and a 40.2 K feedback resistor 42 connects the output of amplifier 38 to its inverting input. The output of amplifier 38 goes to the inverting input of amplifier 43 via a 4.02 K ohm resistor 44. The output of amplifier 43 is connected to its inverting input via a 40.2 K ohm resistor 45. The non-inverting input of amplifier 43 is connected to ground. A resistor to ground is not necessary here (for this op-amp only) since any offset because of mis-matched input resistance is removed by the offset feedback. This removes one resistor. The output goes to the inverting input of amplifier 47 of demodulator 31, via a 4.02 K ohm resistor 46. The output is connected to the inverting input via a 4.02 K ohm resistor 48. The non-inverting input is connected to ground via a 2 K ohm resistor 49. Operational amplifiers 38, 43 and 47 are BA4560 amplifiers, although many other models could be used.
An input to a first terminal of a normally open switch 50 of demodulator 31 is connected to the output of amplifier 43. An input to a first terminal of a normally closed switch 51 is connected to the output of inverting amplifier 47. The output terminals of switches 50 and 51 are connected to the inverting input of amplifier 52 of output buffer electronics 32, via a 2 K ohm resistor 53. The actuators of switches 50 and 51 of demodulator 31 are actuated with signal 21 from oscillator 20. Switches 50 and 51 of demodulator 31 are in an ADG413 quad SPST analog switch device. Many other models would suffice.
The non-inverting input of amplifier 52 is connected to ground via a 2 K ohm resistor 54. The output of amplifier 52 is connected to its inverting input via a 56 picofarad capacitor 57. This connection arrangement may be varied depending on the stability of the amplifier 52. The output of amplifier 52 goes to the bases of NPN buffer output transistor 58 and PNP buffer output transistor 59. The collectors of transistors 58 and 59 are connected to +15 volts and -15 volts, respectively. The emitters of transistors 58 and 59 are connected together, and are connected to the output of amplifier 52 via a 316 ohm resistor 60. The common emitter connection of transistors 58 and 59 is the output of buffer electronics 32. This output is connected to the inverting input of amplifier 52 via a 0.033 microfarad capacitor 55 and a 5.11 K ohm resistor 56 connected in series. A diode 61 has a cathode and an anode connected to the collector and emitter, respectively, of transistor
58. A diode 62 has a cathode and an anode connected to the emitter and collector, respectively, of transistor
59. Amplifier 52 is a BA4560 device; transistor 58 is a BCX55 device; and transistor 59 is a BCX52 device. The output of first buffer electronics 32 is connected to a first terminal of winding 25. Winding 25 provides the magnetic feedback to MR sensor 11 via a magnetic core 26 and gap 23. Core 26 and gap 23 are represented m figure 2 but not shown m figure 3. A second terminal of winding 25 is connected to the anode of diode 63 and the cathode of diode 64. The cathode of diode 63 is connected to the collector of transistor 58. The anode of diode 64 is connected to the collector of transistor 59. Diodes 61, 62, 63 and 64 function as voltage clamps for circuit protection.
The second terminal of winding 25 is the current output 65 of sensor system 10. Output 65 is connected to ground via a 4,700 picofarad capacitor. Output 65 is connected to one end of a 100 ohm RL resistor 34. The other end of resistor 34 is connected to ground. This is the resistor used here, but the customer usually chooses this value. It can be anything from zero to one megohm, although the device does not operate over its full range of current with larger resistors. Voltage output 35 across resistor 34 is the indication of the amount of current 12 flowing through the wire proximate to MR sensor 11. Also, output 65 is connected as an offset feedback signal to the non- inverting input of a buffer amplifier 66. Amplifier 66 is an LT1013 device. The output of amplifier 66 is connected to its inverting input and to input terminals of a normally open switch 67 and a normally closed switch 68. Switches 67 and 68 are of modulator 36. Actuators of switches 67 and 68 are actuated by signal 21 from oscillator 20. The output terminals of switches 67 and 68 are connected to the inverting and non-inverting inputs of an amplifier 69 of integrator 37 via 24.9 K ohm resistors 70 and 71, respectively. Amplifier 69 is an LT1013 device. A 0.47 microfarad capacitor connects the output of amplifier 69 to its inverting input. A 0.47 capacitor 73 connects the non-inverting input of amplifier 69 to ground. The output of amplifier 69 is connected to a summer 27 point at the non-inverting input of amplifier 43, via 46.4 K ohm resistors 74 and 75. The inter-connection of resistors 74 and 75 is connected to ground through a 0.47 microfarad capacitor 76. The signal from amplifier 69 to the summer 27 point is a voltage offset signal that is used for nulling out offset signals (Vof£1) 22 in MR sensor 11 and offset signals (Voff2) of amplifier electronics 30.
Demodulator 31 and modulator 36 have normally open switches 50 and 67, and normally closed switches 51 and 68. The switches, as noted above, are paired off in demodulator 31 and modulator 36. In each pair, one switch is open and one switch is closed at any one given time period. All of the four switches 50, 51, 67 and 68 are actuated by clock pulse 21. Since the sensed signal was modulated m MR sensor 11 at one kHz, demodulator 31 demodulates the amplified magnetic signal back down to DC (and modulates DC amplified offset signals up to one kHz) . Switches 67 and 68 take one kHz square wave 21 and alternately switch the incoming signal to the non- mvertmg and the inverting inputs of operational amplifier 69. This in effect modulates any DC signal and demodulates a one kHz signal. Amplifier 69 then acts as an integrator to pass the DC signal as feedback to operational amplifier electronics 30. Resistors 74 and 75 and capacitor 76 also act to filter this voltage.
The set/reset mechanism 90 for MR sensor 11 is initiated by a signal 21 from oscillator 20. Oscillator 20 consists of an LM555 chip 77 with a terminal 1 to ground. A terminal 2 is connected to threshold terminal 6 that is connected to ground via a 0.01 microfarad capacitor 80 and to VCC (+5 volts DC) via a 49.9 K ohm resistor 82. An output terminal 3 provides about one kHz square wave output 21. Also, chip 77 has a reset terminal 4 connected to the input of a high speed MOSFET driver 78, and control terminal 5 connected to ground via a 0.01 microfarad capacitor 79. Discharge terminal 7 is connected to terminal 6 via a 21.5k ohm resistor 81. VCC terminal 8 is connected to +5 volts DC. The output of set/reset driver 78 is connected to set/reset coil or strap 83 of MR sensor 11, via a 0.01 microfarad capacitor 84 and an eight ohm resistor 85 connected m series.
Associated with the power supply, there is a 5.1 volt Zener diode 87 and 2 K resistor 88 tied between ground and +15 volts. This creates a 5 volt supply for the switches 67, 68, 50 and 51 (through Vp) and device 77. The approach creates a 5 volt supply, and improves performance over the tying those pins to +15 volts. This configuration decreases the "glitches" on the output each time the set or reset occurs, for the price of two low- cost components.
Although the invention has been described with respect to a specific preferred embodiment, many variations and modifications will become apparent to those skilled m the art upon reading the present application. It is therefore the intention that the appended claims be interpreted as broadly as possible in view of the prior art to include all such variations and modifications .

Claims

THE CLAIMS 1. A magnetoresistive current sensor system comprising: a magnetoresistive sensor having an output; operational amplifier electronics having an input connected to the output of said magnetoresistive sensor, and having an output; a demodulator having an input connected to the output of said operational amplifier electronics, and having an output; output buffer having an input connected to the output of said demodulator, and having an output ; a coil, magnetically coupled to said magnetoresistive sensor and connected to the output of said output buffer; a modulator having an input connected to the output of said output buffer; and an integrator having an input connected to the output of said modulator and having an output connected to said operational amplifier electronics .
2. The sensor system of claim 1, wherein: a first offset voltage is at the output of said magnetoresistive sensor; a second offset voltage and the first offset voltage are at the output of said operational amplifier electronics; and an offset voltage feedback signal from the output of said integrator nulls out the first and second offset voltages.
3. The sensor system of claim 2, wherein: a magnetic signal, having a magnitude, from said coil to said magnetoresistive sensor, magnetically nulls out a magnetic field sensed by said magnetoresistive sensor; and the magnitude of the coil's magnetic signal is indicative of a magnitude of the magnetic field sensed by said magnetoresistive sensor.
4. The sensor system of claim 3, further comprising: at least one conductor proximate to said magnetoresistive sensor; and wherein said at least one conductor conducts a current that radiates the magnetic field sensed by said magnetoresistive sensor.
5. The sensor system of claim 4, wherein the magnitude of a signal at the output buffer is indicative of the magnitude of the current .
. The sensor system of claim 4, further comprising: a set/reset circuit connected to said magnetoresistive sensor; and an oscillator outputting a clock signal; and wherein: the clock signal goes to said set/reset circuit; said set/reset circuit sets and resets said magnetoresistive sensor; the clock signal goes to said demodulator to actuate said demodulator; and the clock signal goes to said modulator to actuate said modulator.
7. The sensor system of claim 4, wherein; said magnetoresistive sensor is a Wheatstone bridge of resistors; and said resistors are Permalloy (NiFe) resistors.
8. A magnetoresistive sensor system comprising: a magnetoresistive sensor; a conductor proximate to said magnetoresistive sensor; a first amplifier connected to said magnetoresistive sensor; a demodulator connected to said first amplifier; a second amplifier connected to said demodulator; a coil, coupled to said magnetoresistive sensor and connected to said second amplifier; a modulator connected to said second amplifier; and an integrator connected to said modulator and to said first amplifier.
9. The sensor system of claim 8, wherein said integrator outputs a first signal to null out an offset voltage, if any, of said magnetoresistive sensor.
10. The sensor system of claim 9, wherein said integrator outputs a second signal to null out an offset voltage, if any, of said first amplifier.
11. The sensor of claim 10, wherein: said coil couples a magnetic signal to said MR sensor to null out a magnetic field of a current m said conductor, sensed by said magnetoresistive sensor; and a magnitude of the magnetic signal is indicative of a magnitude of the current m said conductor.
12. The sensor of claim 11, further comprising: a set/reset circuit connected to said magnetoresistive sensor; and an oscillator connected to said modulator, said demodulator, and said set/reset circuit.
13. A magnetoresistive current sensor system comprising: a magnetoresistive sensor; an amplifier connected to said magnetoresistive sensor; a modulator connected to said amplifier; a buffer connected to said modulator; a modulator connected to said buffer ; an integrator connected to said modulator and said amplifier; and an inductive device coupled to said magnetoresistive sensor and connected to said buffer.
14. The system of claim 13, further comprising: a set/reset circuit connected to said magnetoresistive sensor; and a signal generator connected to said modulator, demodulator and set/reset circuit.
15. A means for sensing current with offset nulling, comprising : sensor means for magnetoresistively sensing a magnetic field; amplifier means for amplifying signals from said sensor means; modulator means for modulating signals from said amplifier means; buffer means for buffering signals from said modulator means; demodulator means for demodulating signals from said buffer means; and integrator means for integrating signals from said demodulator means, and adding integrated signals to said amplifier means.
16. The means for sensing current of claim 15, wherein the integrated signals null out offsets from said sensor means .
17. The means for sensing current of claim 16, wherein the integrated signals null out offsets from said amplifier means.
18. The means for sensing current of claim 17, further comprising magnetic feedback means for providing signals from said buffer means to said sensor means to null out the magnetic field sensed by said sensing means.
19. The means for sensing current of claim 18, further comprising a set/reset means for setting and resetting said sensor means .
20. The means for sensing current of claim 19, further comprising a generator means for generating a signal for said modulator means, demodulator means and set/reset means .
PCT/US2000/029443 1999-10-29 2000-10-26 A closed-loop magnetoresistive current sensor system having active offset nulling WO2001033233A1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP00973859A EP1224477B1 (en) 1999-10-29 2000-10-26 A closed-loop magnetoresistive current sensor system having active offset nulling
DE60041707T DE60041707D1 (en) 1999-10-29 2000-10-26 ONE OF A CLOSED CIRCLE MAGNETORESISTIVE ELECTRICITY SENSOR SYSTEM WITH ACTIVE ZERO POINT DIFFERENCE

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/430,468 US6445171B2 (en) 1999-10-29 1999-10-29 Closed-loop magnetoresistive current sensor system having active offset nulling
US09/430,468 1999-10-29

Publications (1)

Publication Number Publication Date
WO2001033233A1 true WO2001033233A1 (en) 2001-05-10

Family

ID=23707683

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2000/029443 WO2001033233A1 (en) 1999-10-29 2000-10-26 A closed-loop magnetoresistive current sensor system having active offset nulling

Country Status (5)

Country Link
US (2) US6445171B2 (en)
EP (1) EP1224477B1 (en)
AT (1) ATE424565T1 (en)
DE (1) DE60041707D1 (en)
WO (1) WO2001033233A1 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7365535B2 (en) 2005-11-23 2008-04-29 Honeywell International Inc. Closed-loop magnetic sensor system
CN102759649A (en) * 2011-04-21 2012-10-31 Abb股份有限公司 Current sensor operating in accordance with the principe of compensation
CN105393130A (en) * 2013-03-21 2016-03-09 淡水河谷公司 Magnetic compensation circuit and method for compensating the output of a magnetic sensor, responding to changes a first magnetic field
CN105548646A (en) * 2015-12-31 2016-05-04 深圳青铜剑科技股份有限公司 Closed-loop Hall current sensor

Families Citing this family (80)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8180585B2 (en) * 1999-08-26 2012-05-15 Tk Holdings, Inc. Magnetic crash sensor
US20080109177A1 (en) * 2003-09-19 2008-05-08 Cech Leonard S Magnetic crash sensor
EP1328799B1 (en) * 2000-10-16 2005-08-31 Infineon Technologies AG Electronic circuit, sensor arrangement and method for processing a sensor signal
JP2003075157A (en) * 2001-09-06 2003-03-12 Seiko Instruments Inc Electronic equipment
US6686730B2 (en) * 2002-06-11 2004-02-03 Rockwell Automation Technologies, Inc. Snap fit Hall effect circuit mount apparatus and method
US6759840B2 (en) * 2002-06-11 2004-07-06 Rockwell Automation Technologies, Inc. Hall effect conductor/core method and apparatus
DE10244905A1 (en) * 2002-09-25 2004-04-08 Austriamicrosystems Ag Regulation device for process control comprises a sensor for measurement of a chemical or physical value, said sensor being integrated in a feedback circuit so that overloading of the device can be detected
US6759843B2 (en) 2002-11-15 2004-07-06 Honeywell International Inc. Sensing methods and systems for hall and/or MR sensors
US7259545B2 (en) 2003-02-11 2007-08-21 Allegro Microsystems, Inc. Integrated sensor
DE60304460T2 (en) * 2003-07-12 2006-10-12 Liaisons Electroniques-Mécaniques LEM S.A. Current sensor with a magnetic core having an air gap and thus equipped power supply circuit
US20060219436A1 (en) * 2003-08-26 2006-10-05 Taylor William P Current sensor
US7476816B2 (en) * 2003-08-26 2009-01-13 Allegro Microsystems, Inc. Current sensor
US7709754B2 (en) * 2003-08-26 2010-05-04 Allegro Microsystems, Inc. Current sensor
US7839143B2 (en) * 2003-09-19 2010-11-23 Tk Holdings Inc. Eddy current magnetic crash sensor
US7772839B2 (en) * 2003-09-19 2010-08-10 Tk Holdings, Inc. Eddy current magnetic crash sensor
US7570068B2 (en) 2003-09-19 2009-08-04 Tk Holdings, Inc. Signal processing system and method
US7839142B2 (en) * 2003-09-19 2010-11-23 Tk Holdings, Inc. Magnetic crash sensor
US7664612B2 (en) 2003-09-19 2010-02-16 T K Holdings, Inc. Signal processing system and method
US7564249B2 (en) 2003-12-21 2009-07-21 Tk Holdings, Inc. Signal processing system and method
US7005915B2 (en) * 2004-02-27 2006-02-28 Honeywell International Inc. Series bridge circuit with amplifiers
US7075416B2 (en) * 2004-06-21 2006-07-11 Honeywell International Inc. Automotive universal latch control implementation
US7436632B2 (en) * 2004-06-30 2008-10-14 Seagate Technology Llc Differential/dual CPP recording head
US7777607B2 (en) * 2004-10-12 2010-08-17 Allegro Microsystems, Inc. Resistor having a predetermined temperature coefficient
US20060192550A1 (en) * 2005-02-25 2006-08-31 Sandquist David A Current sensor with magnetic toroid single frequency detection scheme
US7839605B2 (en) * 2005-11-13 2010-11-23 Hitachi Global Storage Technologies Netherlands B.V. Electrical signal-processing device integrating a flux sensor with a flux generator in a magnetic circuit
US7768083B2 (en) 2006-01-20 2010-08-03 Allegro Microsystems, Inc. Arrangements for an integrated sensor
US7423826B2 (en) * 2006-03-10 2008-09-09 Seagate Technology Llc Readback system providing a combined sample output including multiple samples per bit
US20070279053A1 (en) * 2006-05-12 2007-12-06 Taylor William P Integrated current sensor
US20070274695A1 (en) * 2006-05-26 2007-11-29 John Phillip Chevalier Automotive universal latch control implementation
US7508188B2 (en) * 2006-05-31 2009-03-24 Broadcom Corporation On-chip current sensing methods and systems
WO2008017972A2 (en) * 2006-08-09 2008-02-14 Koninklijke Philips Electronics N. V. A magnet system for biosensors
US20080042637A1 (en) * 2006-08-18 2008-02-21 Honeywell International Inc. Magnetic toroid self resonant current sensor
US7615989B2 (en) * 2006-10-06 2009-11-10 Honeywell International Inc. Method and apparatus for DC integrated current sensor
US7498804B1 (en) 2006-10-16 2009-03-03 Yazaki North America, Inc. Resonance current sensing
US7521934B1 (en) 2006-10-16 2009-04-21 Yazaki North America, Inc. Battery current measurement with real time pre-gain adjust and programmable excitation source
US7795862B2 (en) 2007-10-22 2010-09-14 Allegro Microsystems, Inc. Matching of GMR sensors in a bridge
US8269491B2 (en) * 2008-02-27 2012-09-18 Allegro Microsystems, Inc. DC offset removal for a magnetic field sensor
US7755349B2 (en) * 2008-03-03 2010-07-13 Memsic, Inc. Correcting offset in magneto-resistive devices
US7816905B2 (en) 2008-06-02 2010-10-19 Allegro Microsystems, Inc. Arrangements for a current sensing circuit and integrated current sensor
US8093670B2 (en) 2008-07-24 2012-01-10 Allegro Microsystems, Inc. Methods and apparatus for integrated circuit having on chip capacitor with eddy current reductions
US8063634B2 (en) * 2008-07-31 2011-11-22 Allegro Microsystems, Inc. Electronic circuit and method for resetting a magnetoresistance element
US7973527B2 (en) 2008-07-31 2011-07-05 Allegro Microsystems, Inc. Electronic circuit configured to reset a magnetoresistance element
IT1402178B1 (en) * 2010-09-09 2013-08-28 St Microelectronics Srl OFFSET AUTOMATIC COMPENSATION READING CIRCUIT FOR A MAGNETIC FIELD SENSOR AND RELATIVE AUTOMATIC COMPENSATION OFFSET READING METHOD
IES20100604A2 (en) 2010-09-21 2011-06-08 Shakira Ltd DC & AC current detection circuit
US10473731B2 (en) 2010-11-26 2019-11-12 Stmicroelectronics S.R.L. Magnetic sensor reading device, system and method
EP2495578B1 (en) * 2011-03-04 2013-09-18 Nxp B.V. Magnetic sensors
DE102011104307B4 (en) * 2011-06-16 2013-09-26 Austriamicrosystems Ag Arrangement and method for operating a sensor, in particular a bridge sensor, and a sensor arrangement
US8952686B2 (en) * 2011-10-25 2015-02-10 Honeywell International Inc. High current range magnetoresistive-based current sensor
KR101284344B1 (en) * 2011-12-09 2013-07-08 현대자동차주식회사 Current sensor reconfigureation method of a vehicle having a motor
US8629539B2 (en) 2012-01-16 2014-01-14 Allegro Microsystems, Llc Methods and apparatus for magnetic sensor having non-conductive die paddle
US9417297B2 (en) 2012-02-16 2016-08-16 Honeywell International Inc. Tunneling magneto-resistive device with set/reset and offset straps
US9812588B2 (en) 2012-03-20 2017-11-07 Allegro Microsystems, Llc Magnetic field sensor integrated circuit with integral ferromagnetic material
US10234513B2 (en) 2012-03-20 2019-03-19 Allegro Microsystems, Llc Magnetic field sensor integrated circuit with integral ferromagnetic material
US9666788B2 (en) 2012-03-20 2017-05-30 Allegro Microsystems, Llc Integrated circuit package having a split lead frame
US9494660B2 (en) 2012-03-20 2016-11-15 Allegro Microsystems, Llc Integrated circuit package having a split lead frame
US9297836B2 (en) * 2013-03-08 2016-03-29 Deere & Company Method and sensor for sensing current in a conductor
US9190606B2 (en) 2013-03-15 2015-11-17 Allegro Micosystems, LLC Packaging for an electronic device
US10345343B2 (en) 2013-03-15 2019-07-09 Allegro Microsystems, Llc Current sensor isolation
JP6171526B2 (en) * 2013-04-19 2017-08-02 Tdk株式会社 Magnetic field detection device and current sensor
US9411025B2 (en) 2013-04-26 2016-08-09 Allegro Microsystems, Llc Integrated circuit package having a split lead frame and a magnet
JP2015087210A (en) * 2013-10-30 2015-05-07 矢崎総業株式会社 Current detector
US9354284B2 (en) 2014-05-07 2016-05-31 Allegro Microsystems, Llc Magnetic field sensor configured to measure a magnetic field in a closed loop manner
CA2954269C (en) * 2014-08-08 2019-09-10 Halliburton Energy Services, Inc. Low-noise fluxgate magnetometer with increased operating temperature range
US9322887B1 (en) 2014-12-01 2016-04-26 Allegro Microsystems, Llc Magnetic field sensor with magnetoresistance elements and conductive-trace magnetic source
US20160161531A1 (en) * 2014-12-04 2016-06-09 Server Technology, Inc. Magneto-resistive sensor device and magnetic bias regulator circuit, along with systems and methods incorporating same
GB2533570A (en) * 2014-12-19 2016-06-29 Hall Element Devices Ltd Apparatus for measure of quantity and associated method of manufacturing
CN106018939B (en) * 2016-05-20 2018-08-10 清华大学 A kind of wide range Transient Transformer based on tunnel magneto
DE102017004349A1 (en) * 2017-05-08 2018-11-08 Tdk-Micronas Gmbh Magnetic field compensation device
US10326417B1 (en) 2017-12-01 2019-06-18 Qualcomm Incorporated Offset nulling for high-speed sense amplifier
US10935612B2 (en) 2018-08-20 2021-03-02 Allegro Microsystems, Llc Current sensor having multiple sensitivity ranges
US10991644B2 (en) 2019-08-22 2021-04-27 Allegro Microsystems, Llc Integrated circuit package having a low profile
US11187764B2 (en) 2020-03-20 2021-11-30 Allegro Microsystems, Llc Layout of magnetoresistance element
US11800813B2 (en) 2020-05-29 2023-10-24 Allegro Microsystems, Llc High isolation current sensor
US11650230B2 (en) 2021-02-01 2023-05-16 Baker Hughes Holdings Llc Magnetic sensor with automatic balance circuitry
US11567108B2 (en) 2021-03-31 2023-01-31 Allegro Microsystems, Llc Multi-gain channels for multi-range sensor
US11467235B1 (en) * 2021-05-28 2022-10-11 Allegro Microsystems, Llc Reducing stray magnetic field effects using a magnetic field feedback
CN113777386B (en) * 2021-11-11 2022-02-15 武汉精熔潮电气科技有限公司 Method for detecting steady-state transient current by Hall based on partial iron core and application thereof
US11768230B1 (en) 2022-03-30 2023-09-26 Allegro Microsystems, Llc Current sensor integrated circuit with a dual gauge lead frame
FR3137177A1 (en) * 2022-06-23 2023-12-29 Chauvin Arnoux Clamp meter for AC and DC leakage currents
CN115469137B (en) * 2022-10-26 2023-03-03 南方电网数字电网研究院有限公司 AC/DC closed-loop current sensor

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0286079A2 (en) * 1987-04-09 1988-10-12 Fujitsu Limited Sensing devices utilizing magneto electric transducers
US4961049A (en) * 1987-12-11 1990-10-02 Agence Spatiale Europeenne Magnetically-coupled apparatus for measuring electrical current

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3525041A (en) 1966-08-08 1970-08-18 Tektronix Inc Magnetic field measuring method and device effective over a wide frequency range
US3482163A (en) * 1967-05-24 1969-12-02 Tektronix Inc Magnetic signal measuring device including degaussing means
US3959724A (en) * 1974-07-22 1976-05-25 Rochester Instrument Systems, Inc. Electronic wattmeter
US4097802A (en) * 1975-06-30 1978-06-27 International Business Machines Corporation Magnetoresistive field sensor with a magnetic shield which prevents sensor response at fields below saturation of the shield
US4096436A (en) * 1977-05-23 1978-06-20 The Valeron Corporation Power monitor
US4255705A (en) * 1979-09-24 1981-03-10 General Electric Company Peak detection and electronic compensation of D. C. saturation magnetization in current transformers used in watt hour meter installations
CH651672A5 (en) * 1980-12-24 1985-09-30 Landis & Gyr Ag Magnetoresistive current detector.
US4395677A (en) * 1981-02-13 1983-07-26 Chrysler Corporation Hall Effect tester for heated window grids
US4356446A (en) * 1981-03-23 1982-10-26 Transdata, Inc. Time division multiplier transducer with selective phase shift
US4482862A (en) * 1982-06-10 1984-11-13 The Charles Stark Draper Laboratory, Inc. Current sensor
CH662000A5 (en) * 1985-02-05 1987-08-31 Lem Sa CURRENT TRANSFORMER FOR DIRECT AND ALTERNATING CURRENT.
US4754219A (en) * 1985-09-09 1988-06-28 General Electric Company Low cost self-contained transformerless solid state electronic watthour meter having thin film ferromagnetic current sensor
US4823075A (en) * 1987-10-13 1989-04-18 General Electric Company Current sensor using hall-effect device with feedback
US4905117A (en) * 1988-09-02 1990-02-27 Westinghouse Electric Corp. Circuit and method for DC content protection of parallel VSCF power systems
US5196784A (en) * 1991-03-18 1993-03-23 Hughes Aircraft Company Isolated current monitoring circuit for measuring direct and high duty factor currents
US5644851A (en) * 1991-12-20 1997-07-08 Blank; Rodney K. Compensation system for electronic compass
US5416427A (en) * 1993-02-11 1995-05-16 Tracewell Enclosures, Inc. Test and development apparatus for bus-based circuit modules with open side and backplane access features
US5438257A (en) * 1993-09-09 1995-08-01 General Electric Company Reduced magnetic flux current sensor
EP0704710B1 (en) * 1994-09-29 2003-02-05 Ramesh, G. Mani, Dr. Method for compensating the piezoresistive offset voltage in doubly connected Hall effect devices based on silicon
DE4436876A1 (en) * 1994-10-15 1996-04-18 Lust Antriebstechnik Gmbh Sensor chip
US5726571A (en) * 1996-04-24 1998-03-10 The Regents Of The University Of California Apparatus and method for real-time k-space mapping of the scanning operation of a magnetic resonance imaging system
US5831426A (en) * 1996-08-16 1998-11-03 Nonvolatile Electronics, Incorporated Magnetic current sensor
US6029090A (en) * 1997-01-27 2000-02-22 Herbst; Ewa Multi-functional electrical stimulation system
GB9718321D0 (en) * 1997-09-01 1997-11-05 Cambridge Consultants Electromagnetic sensor system

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0286079A2 (en) * 1987-04-09 1988-10-12 Fujitsu Limited Sensing devices utilizing magneto electric transducers
US4961049A (en) * 1987-12-11 1990-10-02 Agence Spatiale Europeenne Magnetically-coupled apparatus for measuring electrical current

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7365535B2 (en) 2005-11-23 2008-04-29 Honeywell International Inc. Closed-loop magnetic sensor system
CN102759649A (en) * 2011-04-21 2012-10-31 Abb股份有限公司 Current sensor operating in accordance with the principe of compensation
CN105393130A (en) * 2013-03-21 2016-03-09 淡水河谷公司 Magnetic compensation circuit and method for compensating the output of a magnetic sensor, responding to changes a first magnetic field
CN105548646A (en) * 2015-12-31 2016-05-04 深圳青铜剑科技股份有限公司 Closed-loop Hall current sensor

Also Published As

Publication number Publication date
US6566856B2 (en) 2003-05-20
EP1224477A1 (en) 2002-07-24
EP1224477B1 (en) 2009-03-04
US20020149355A1 (en) 2002-10-17
US20010050552A1 (en) 2001-12-13
US6445171B2 (en) 2002-09-03
ATE424565T1 (en) 2009-03-15
DE60041707D1 (en) 2009-04-16

Similar Documents

Publication Publication Date Title
US6445171B2 (en) Closed-loop magnetoresistive current sensor system having active offset nulling
US4482862A (en) Current sensor
JP2923307B2 (en) Current sensor
US10917092B2 (en) Magnetic field sensor with switching network
CN102193072B (en) Magnetic sensor
US4859944A (en) Single-winding magnetometer with oscillator duty cycle measurement
CN113203885B (en) Current sensor, magnetic sensor and circuit
EP0380562B1 (en) Magnetometer employing a saturable core inductor
JP2000055999A (en) Magnetic sensor device and current sensor device
US8212570B1 (en) Amplifier circuit for a current transformer
JP2000055998A (en) Magnetic sensor device and current sensor device
CN115980639B (en) Magneto-resistance sensor
CN216144871U (en) Temperature compensation current sensor
CN115469137A (en) AC/DC closed-loop current sensor
CA1196382A (en) Current sensing circuit for motor controls
JP2002006016A (en) Magnetic sensor
JP3794122B2 (en) Magnetic detector
JPH09105772A (en) Magnetic detecting device and magnetic detecting method
CN219285384U (en) Vector magnetometer
Robertson Miniature magnetic sensor with a high sensitivity and wide bandwidth
US20220155387A1 (en) Magnetic field sensor with stacked transducers and capacitive summing amplifier
Rohrmann et al. Methodologies to compensate magnetic stray fields in the context of xmr-based systems
JP4214574B2 (en) Sensor circuit
JPH0718972Y2 (en) Magnetic detection device
JP2835093B2 (en) DC current detector

Legal Events

Date Code Title Description
AL Designated countries for regional patents

Kind code of ref document: A1

Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE

121 Ep: the epo has been informed by wipo that ep was designated in this application
DFPE Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101)
WWE Wipo information: entry into national phase

Ref document number: 2000973859

Country of ref document: EP

WWP Wipo information: published in national office

Ref document number: 2000973859

Country of ref document: EP