WO2001031698A3 - Procede de traitement thermique de substrats en semi-conducteur - Google Patents
Procede de traitement thermique de substrats en semi-conducteur Download PDFInfo
- Publication number
- WO2001031698A3 WO2001031698A3 PCT/EP2000/009534 EP0009534W WO0131698A3 WO 2001031698 A3 WO2001031698 A3 WO 2001031698A3 EP 0009534 W EP0009534 W EP 0009534W WO 0131698 A3 WO0131698 A3 WO 0131698A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- semiconductor substrates
- thermally treating
- treating semiconductor
- silicides
- aim
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J19/0006—Controlling or regulating processes
- B01J19/0013—Controlling the temperature of the process
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J19/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
- B01J19/12—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electromagnetic waves
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J19/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
- B01J19/12—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electromagnetic waves
- B01J19/122—Incoherent waves
- B01J19/123—Ultra-violet light
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
- F27D99/00—Subject matter not provided for in other groups of this subclass
- F27D99/0001—Heating elements or systems
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
- H01L21/2233—Diffusion into or out of AIIIBV compounds
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J2219/00049—Controlling or regulating processes
- B01J2219/00051—Controlling the temperature
- B01J2219/00139—Controlling the temperature using electromagnetic heating
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J2219/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
- B01J2219/0803—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy
- B01J2219/085—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy creating magnetic fields
- B01J2219/0852—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy creating magnetic fields employing permanent magnets
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J2219/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
- B01J2219/0803—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy
- B01J2219/085—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy creating magnetic fields
- B01J2219/0854—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy creating magnetic fields employing electromagnets
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J2219/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
- B01J2219/0873—Materials to be treated
- B01J2219/0879—Solid
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
- F27B17/00—Furnaces of a kind not covered by any preceding group
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
- F27D19/00—Arrangements of controlling devices
Abstract
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001534196A JP2003513446A (ja) | 1999-10-28 | 2000-09-29 | 半導体基板を熱処理する方法 |
KR1020027005519A KR20020043257A (ko) | 1999-10-28 | 2000-09-29 | 반도체 기판의 열 처리 방법 |
EP00979480A EP1224695A2 (fr) | 1999-10-28 | 2000-09-29 | Procede de traitement thermique de substrats en semi-conducteur |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19952015A DE19952015A1 (de) | 1999-10-28 | 1999-10-28 | Verfahren zum thermischen Behandeln von Objekten |
DE19952015.1 | 1999-10-28 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2001031698A2 WO2001031698A2 (fr) | 2001-05-03 |
WO2001031698A3 true WO2001031698A3 (fr) | 2002-02-28 |
Family
ID=7927217
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/EP2000/009534 WO2001031698A2 (fr) | 1999-10-28 | 2000-09-29 | Procede de traitement thermique de substrats en semi-conducteur |
Country Status (6)
Country | Link |
---|---|
EP (1) | EP1224695A2 (fr) |
JP (1) | JP2003513446A (fr) |
KR (1) | KR20020043257A (fr) |
DE (1) | DE19952015A1 (fr) |
TW (1) | TW526562B (fr) |
WO (1) | WO2001031698A2 (fr) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104867941B (zh) | 2015-04-24 | 2018-05-11 | 京东方科技集团股份有限公司 | 一种制作阵列基板的方法及其阵列基板和显示装置 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0407233A1 (fr) * | 1989-05-18 | 1991-01-09 | Fujitsu Limited | Méthode pour fabriquer un substrat semi-conducteur |
EP0419302A1 (fr) * | 1989-08-19 | 1991-03-27 | Fujitsu Limited | Procédé de fabrication d'un dispositif semi-conducteur du type SOI |
US5060354A (en) * | 1990-07-02 | 1991-10-29 | George Chizinsky | Heated plate rapid thermal processor |
US5773337A (en) * | 1996-12-31 | 1998-06-30 | Hyundai Electronics Industries Co., Ltd. | Method for forming ultra-shallow junction of semiconductor device |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4201559A (en) * | 1978-09-25 | 1980-05-06 | Corning Glass Works | Method of producing a glass-ceramic |
DD226437A1 (de) * | 1981-12-15 | 1985-08-21 | Adw Inst Polymerenchemie | Verfahren zur erzeugung hochorientierter strukturen in halogenierten vinylpolymeren |
-
1999
- 1999-10-28 DE DE19952015A patent/DE19952015A1/de not_active Withdrawn
-
2000
- 2000-09-29 JP JP2001534196A patent/JP2003513446A/ja active Pending
- 2000-09-29 EP EP00979480A patent/EP1224695A2/fr not_active Withdrawn
- 2000-09-29 WO PCT/EP2000/009534 patent/WO2001031698A2/fr not_active Application Discontinuation
- 2000-09-29 KR KR1020027005519A patent/KR20020043257A/ko active IP Right Grant
- 2000-10-20 TW TW089122079A patent/TW526562B/zh not_active IP Right Cessation
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0407233A1 (fr) * | 1989-05-18 | 1991-01-09 | Fujitsu Limited | Méthode pour fabriquer un substrat semi-conducteur |
EP0419302A1 (fr) * | 1989-08-19 | 1991-03-27 | Fujitsu Limited | Procédé de fabrication d'un dispositif semi-conducteur du type SOI |
US5060354A (en) * | 1990-07-02 | 1991-10-29 | George Chizinsky | Heated plate rapid thermal processor |
US5773337A (en) * | 1996-12-31 | 1998-06-30 | Hyundai Electronics Industries Co., Ltd. | Method for forming ultra-shallow junction of semiconductor device |
Non-Patent Citations (2)
Title |
---|
MIYAZAWA T ET AL: "Compositional disordering of In0.53Ga0.47As/In0.52Al0.48As multiquantum well structures by repetitive rapid thermal annealing", JAPANESE JOURNAL OF APPLIED PHYSICS, PART 2 (LETTERS), vol. 28, no. 5, May 1989 (1989-05-01), pages L730 - L733, XP000030441, ISSN: 0021-4922 * |
SINGH R ET AL: "Low temperature shallow junction formation using vacuum ultraviolet photons during rapid thermal processing", APPLIED PHYSICS LETTERS, vol. 70, no. 13, 31 March 1997 (1997-03-31), pages 1700 - 1702, XP002166705, ISSN: 0003-6951 * |
Also Published As
Publication number | Publication date |
---|---|
TW526562B (en) | 2003-04-01 |
WO2001031698A2 (fr) | 2001-05-03 |
EP1224695A2 (fr) | 2002-07-24 |
JP2003513446A (ja) | 2003-04-08 |
DE19952015A1 (de) | 2001-05-17 |
KR20020043257A (ko) | 2002-06-08 |
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