WO2001031698A3 - Method for thermally treating semiconductor substrates - Google Patents

Method for thermally treating semiconductor substrates Download PDF

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Publication number
WO2001031698A3
WO2001031698A3 PCT/EP2000/009534 EP0009534W WO0131698A3 WO 2001031698 A3 WO2001031698 A3 WO 2001031698A3 EP 0009534 W EP0009534 W EP 0009534W WO 0131698 A3 WO0131698 A3 WO 0131698A3
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor substrates
thermally treating
treating semiconductor
silicides
aim
Prior art date
Application number
PCT/EP2000/009534
Other languages
German (de)
French (fr)
Other versions
WO2001031698A2 (en
Inventor
Arthur Pelzmann
Original Assignee
Steag Rtp Systems Gmbh
Arthur Pelzmann
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Steag Rtp Systems Gmbh, Arthur Pelzmann filed Critical Steag Rtp Systems Gmbh
Priority to JP2001534196A priority Critical patent/JP2003513446A/en
Priority to KR1020027005519A priority patent/KR20020043257A/en
Priority to EP00979480A priority patent/EP1224695A2/en
Publication of WO2001031698A2 publication Critical patent/WO2001031698A2/en
Publication of WO2001031698A3 publication Critical patent/WO2001031698A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/0006—Controlling or regulating processes
    • B01J19/0013—Controlling the temperature of the process
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
    • B01J19/12—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electromagnetic waves
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
    • B01J19/12—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electromagnetic waves
    • B01J19/122—Incoherent waves
    • B01J19/123—Ultra-violet light
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
    • F27D99/00—Subject matter not provided for in other groups of this subclass
    • F27D99/0001—Heating elements or systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
    • H01L21/2233—Diffusion into or out of AIIIBV compounds
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/00049—Controlling or regulating processes
    • B01J2219/00051—Controlling the temperature
    • B01J2219/00139—Controlling the temperature using electromagnetic heating
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
    • B01J2219/0803—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy
    • B01J2219/085—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy creating magnetic fields
    • B01J2219/0852—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy creating magnetic fields employing permanent magnets
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
    • B01J2219/0803—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy
    • B01J2219/085—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy creating magnetic fields
    • B01J2219/0854—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy creating magnetic fields employing electromagnets
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
    • B01J2219/0873—Materials to be treated
    • B01J2219/0879—Solid
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B17/00—Furnaces of a kind not covered by any preceding group
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
    • F27D19/00—Arrangements of controlling devices

Abstract

The aim of the invention is to thermally treat objects, especially semiconductor substrates, in a complete and effective manner and in a reaction chamber. According to the inventive method, at least partial areas of the object are heated to at least three temperature maxima, whereby corresponding cooling phases are provided in-between. The method can be preferably used for breaking up the hydrogen passivation in p-doped GaN for the phase transition of silicides.
PCT/EP2000/009534 1999-10-28 2000-09-29 Method for thermally treating semiconductor substrates WO2001031698A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2001534196A JP2003513446A (en) 1999-10-28 2000-09-29 Method of heat treating semiconductor substrate
KR1020027005519A KR20020043257A (en) 1999-10-28 2000-09-29 Method for thermally treating semiconductor substrates
EP00979480A EP1224695A2 (en) 1999-10-28 2000-09-29 Method for thermally treating semiconductor substrates

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19952015.1 1999-10-28
DE19952015A DE19952015A1 (en) 1999-10-28 1999-10-28 Process for the thermal treatment of objects

Publications (2)

Publication Number Publication Date
WO2001031698A2 WO2001031698A2 (en) 2001-05-03
WO2001031698A3 true WO2001031698A3 (en) 2002-02-28

Family

ID=7927217

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2000/009534 WO2001031698A2 (en) 1999-10-28 2000-09-29 Method for thermally treating semiconductor substrates

Country Status (6)

Country Link
EP (1) EP1224695A2 (en)
JP (1) JP2003513446A (en)
KR (1) KR20020043257A (en)
DE (1) DE19952015A1 (en)
TW (1) TW526562B (en)
WO (1) WO2001031698A2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104867941B (en) 2015-04-24 2018-05-11 京东方科技集团股份有限公司 A kind of method for making array base palte and its array base palte and display device

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0407233A1 (en) * 1989-05-18 1991-01-09 Fujitsu Limited Method for fabricating a semiconductor substrate
EP0419302A1 (en) * 1989-08-19 1991-03-27 Fujitsu Limited A method of manufacturing semiconductor on insulator
US5060354A (en) * 1990-07-02 1991-10-29 George Chizinsky Heated plate rapid thermal processor
US5773337A (en) * 1996-12-31 1998-06-30 Hyundai Electronics Industries Co., Ltd. Method for forming ultra-shallow junction of semiconductor device

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4201559A (en) * 1978-09-25 1980-05-06 Corning Glass Works Method of producing a glass-ceramic
DD226437A1 (en) * 1981-12-15 1985-08-21 Adw Inst Polymerenchemie METHOD FOR GENERATING HIGH-ORIENTED STRUCTURES IN HALOGENATED VINYL POLYMERS

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0407233A1 (en) * 1989-05-18 1991-01-09 Fujitsu Limited Method for fabricating a semiconductor substrate
EP0419302A1 (en) * 1989-08-19 1991-03-27 Fujitsu Limited A method of manufacturing semiconductor on insulator
US5060354A (en) * 1990-07-02 1991-10-29 George Chizinsky Heated plate rapid thermal processor
US5773337A (en) * 1996-12-31 1998-06-30 Hyundai Electronics Industries Co., Ltd. Method for forming ultra-shallow junction of semiconductor device

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
MIYAZAWA T ET AL: "Compositional disordering of In0.53Ga0.47As/In0.52Al0.48As multiquantum well structures by repetitive rapid thermal annealing", JAPANESE JOURNAL OF APPLIED PHYSICS, PART 2 (LETTERS), vol. 28, no. 5, May 1989 (1989-05-01), pages L730 - L733, XP000030441, ISSN: 0021-4922 *
SINGH R ET AL: "Low temperature shallow junction formation using vacuum ultraviolet photons during rapid thermal processing", APPLIED PHYSICS LETTERS, vol. 70, no. 13, 31 March 1997 (1997-03-31), pages 1700 - 1702, XP002166705, ISSN: 0003-6951 *

Also Published As

Publication number Publication date
JP2003513446A (en) 2003-04-08
KR20020043257A (en) 2002-06-08
EP1224695A2 (en) 2002-07-24
DE19952015A1 (en) 2001-05-17
WO2001031698A2 (en) 2001-05-03
TW526562B (en) 2003-04-01

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