WO2001025504A1

WO2001025504A1 - Micro three-dimensional structure, production method therefor and production device therefor

Info

Publication number: WO2001025504A1
Application number: PCT/JP2000/005499
Authority: WO
Inventors: Shinji Matsui
Original assignee: Japan Science And Technology Corporation
Priority date: 1999-10-07
Filing date: 2000-08-17
Publication date: 2001-04-12
Also published as: JP2001107252A; JP4137317B2; US6758900B1

Abstract

A micro three-dimensional structure capable of producing a micro three-dimensional structure (νm- to nm-order outer shape) having a complicated structure, a production method therefor and production device therefor. The production method for the micro three-dimensional structure comprises a step of applying a focused ion beam (4) to a sample (1) while supplying a material gas (3) to form a first-layer deposit (5), a step of releasing secondary electrons (6) from the first-layer deposit (5) hit by ions to allow the secondary electrons (6) to form a terrace (7) on the first-layer deposit (5), a step of deflecting the focused ion beam (4) in a desired direction of the terrace (7) based on a set amount from a focal point position controller, a step of forming a second-layer deposit (8) in a deflected position on the terrace (7) based on the deflection amount, and a step of repeating the above steps to form a set micro three-dimensional structure.

Description

Description Microscopic three-dimensional structure, method for manufacturing the same, and apparatus for manufacturing the same

The present invention relates to a microscopic three-dimensional structure for manufacturing a three-dimensional structure having an outer shape on the order of several m to nm by using a CVD method, particularly a focused ion beam method, a method for manufacturing the same, and a manufacturing apparatus therefor. is there. Background art

Examples of manufactured products of micro three-dimensional structures include gears, velvets, coils, dolinoles, knives, etc., which are used as micro machines. It can also be applied to micro tools, micro engines, micro shutters, and tips of scanning probe microscopes.

On the other hand, 3D lithography by direct writing is being studied for the purpose of high integration of semiconductors. This is also relevant to this field.

There are three methods for fabricating micro three-dimensional structures using CVD: light (laser), focused electron beam, and focused ion beam. In lithography, diffraction grating fabrication, etc. They are making three-dimensional structures with vertical and vertical sediments. Disclosure of the invention

However, since photo-CVD is limited by the beam thickness depending on its wavelength, there is a limit to the production of three-dimensional nano-structured objects. It is necessary to incline.

On the other hand, a focused electron beam has a beam diameter of several nm, similar to a focused ion beam, and is suitable for the production of microstructures. In addition, since the beam can be swung by electric and magnetic fields, there is no need to tilt the stage to create a three-dimensional structure. However, electrons are lighter in mass than ions, so they have a larger range, and as a result, There was a problem when electrons penetrated the deposited three-dimensional object and reached the substrate, causing deposition at unnecessary places.

The present invention has been made in view of the above circumstances, and provides a micro three-dimensional structure capable of producing a micro three-dimensional structure having a complicated structure (an outer shape on the order of m to nm), a method of manufacturing the same, and an apparatus for manufacturing the same. Aim.

The present invention, in order to achieve the above object,

[1] In the method for manufacturing a micro three-dimensional structure, (a) a step of irradiating a focused ion beam while supplying a raw material gas onto a sample to form a deposit, and (b) applying ions to the deposit. (C) emitting a focused ion beam in a desired direction of the terrace on the basis of a set amount from a focal position control device. (D) forming an upper layer deposit at a displaced position on the terrace based on the shaken amount; and (e) sequentially performing the steps (b) to (d). And forming a set micro three-dimensional structure.

[2] The production method according to [1] the three-dimensional nanostructure according, G a ⁺ beam source as a liquid metal ion, S i +, S i + +, B e +, B e ++, Au +, a u ^++, or H ⁺ as a gas ion source, characterized in that it is a H e ^+.

[3] In the method for producing a micro three-dimensional structure according to [1], the source gas is WF ₆ , (00) 6, ^ 0 (00) ^ Fe (CO) ₅ , Ni (CO) 4, Au (CH ₃ ) z (A c A c), Cu (HF Ac A c) _z , and A 1 (CH ₃ ) _z .

[4] In the method for producing a micro three-dimensional structure according to [1], the source gas may be pyrene (C ₁₆ H ₁₀ ), styrene (C ₈ H ₈ ), HMDS, HM CTS as an organic gas. Features.

[5] A micro three-dimensional structure manufacturing apparatus comprising a sample mounted on a temperature-variable sample stage, a focused ion beam source, a gas supply device, and a focused ion beam focal point position control device. A deposit is formed on the sample, a terrace is formed on the deposit, and the focused ion beam is sequentially swung in a desired direction of the terrace based on a set amount from the focal position control device to form an upper layer. Pile of Forming an object and forming a set micro three-dimensional structure.

[6] The external dimensions of the micro three-dimensional structure obtained by the method for manufacturing a micro three-dimensional structure described in [1] above are coils of the order of several m to nm.

[7] The micro three-dimensional structure according to the above [6], wherein the micro three-dimensional structure is a microcoil having a diameter of 0.6 0111 and a wire diameter of 0.08〃m.

[8] A micro three-dimensional structure obtained by the method for manufacturing a micro three-dimensional structure described in [1] above is a bellows having an outer dimension of several m to nm.

[9] In the micro three-dimensional structure according to the above [8], the micro three-dimensional structure is a micro bellows having an outer diameter of 2.75 m, a height of 6.1 m, and a wall thickness of just over 0.1 m. There is a feature.

[10] A drill having a microscopic structure obtained by the method for manufacturing a microscopic three-dimensional structure as described in [1] above, having an outer dimension of the order of several m to nm.

[11] The micro three-dimensional structure according to the above [10], wherein the micro three-dimensional structure is a microphone mouth drill having an outer diameter of 0.1 μm.

[12] A wine glass in which the external dimensions of the micro three-dimensional structure obtained by the method for manufacturing a micro three-dimensional structure described in [1] are several / m.

[13] The micro three-dimensional structure according to the above [12], wherein the micro three-dimensional structure is a micro wine glass having an outer diameter of 2.75 m and a height of about 12 m. You.

[1 4] [1] minute standing body structure obtained by the manufacturing method of the three-dimensional nanostructure according, using pyrene _{_{(C 1 6 H 1 ()}} ) as the organic gas, the accelerating voltage 3 0 k It is diamond-like carbon produced by Va ⁺ focused ion beam. BRIEF DESCRIPTION OF THE FIGURES

FIG. 1 is a schematic view showing the principle of a manufacturing process of a micro three-dimensional structure showing an embodiment of the present invention. FIG. 2 is a view showing an example of a micro three-dimensional structure manufactured in space based on the principle of manufacturing a F I C C V D micro three-dimensional structure.

FIG. 3 is a diagram illustrating the principle of a focused ion beam assist * CVD (maskless deposition) method according to the present invention. FIG. 4 is a system configuration diagram of a micro three-dimensional structure manufacturing apparatus according to the present invention. FIG. 5 is an explanatory view of a minute standing structure showing a first embodiment of the present invention.

FIG. 6 is an explanatory diagram of a micro three-dimensional structure showing a second embodiment of the present invention.

FIG. 7 is an explanatory view of a micro three-dimensional structure showing a third embodiment of the present invention.

FIG. 8 is an explanatory diagram of a micro three-dimensional structure showing a fourth embodiment of the present invention. BEST MODE FOR CARRYING OUT THE INVENTION

Hereinafter, embodiments of the present invention will be described in detail.

FIG. 1 is a schematic view showing the principle of the manufacturing process of a micro three-dimensional structure showing an embodiment of the present invention.

(1) First, as shown in Fig. 1 (a), a sample (substrate) 1 is irradiated with a focused ion beam 4 while supplying a source gas 3 from a nozzle 2;

* Assist · Perform CVD to form first layer sediment 5.

(2) Then, as shown in Fig. 1 (b), the ions hit the sediment 5 of the first layer and emit secondary electrons 6, and the secondary electrons 6 form a terrace 7. You.

(3) Next, as shown in FIG. 1 (c), the focused ion beam 4 is swung in a desired direction on the terrace 7 thereof. Then, the deposit 8 of the second layer can be formed at the displaced position on the terrace 7 by the shake amount.

The manufacturing process of a micro three-dimensional structure actually manufactured using the micro three-dimensional structure manufacturing principle diagram described in FIG. 1 will be described with reference to FIG.

(1) First, while supplying pyrene (C ₁₆ H ₁₀ ) as a carbon (C) source from a nozzle onto a silicon substrate 100 to be deposited, a Ga + FIB with an accelerating voltage of 30 kV was applied to the silicon substrate 100. To form a carbon column 101 (diameter 08 m) in a direction perpendicular to the silicon substrate 100.

(2) Then, based on the principle shown in Fig. 1, the ion beam is slightly displaced on the carbon column 101 to spread secondary electrons with energy of several eV generated by ion irradiation. Thereby, a terrace on the order of several O nm is formed in the ion beam scanning direction. After the terrace is sufficiently formed, the beam is scanned (within several O nm) in the range below the spread of secondary electrons. After the beam is moved, the beam is further formed after the terrace is sufficiently formed. Scan in the following range. By repeating this process, carbon pillars 102 in space, and further beam movement, carbon pillars 103, 104, 105, 106, 107, 108, 109, 1 1 With 0, it is possible to manufacture a micro three-dimensional structure of continuous carbon columns that can respond to the movement of the ion beam in space one after another.

The details are described below.

FIG. 3 is a diagram illustrating the principle of a focused ion beam assisted CVD (maskless deposition) method according to the present invention.

In this figure, after depositing a W film 12 on a sample 11, a focused ion beam CVD is performed on the W film 12. For example, a nozzle 13 supplies a W (CO) ₆ gas 14 as an organometallic gas and irradiates a focused ion beam (Ga ⁺ ) 15.

Then, the focused ion beam (Ga +) 15 acts on the W (CO) ₆ gas 14 to generate W + 6 CO ΐ. Here, 16 is a W (CO) _b molecule, and the conductivity of the W film by focused ion CVD is 100 to 20020Ω · cm.

Here, an embodiment of the focused ion beam CVD according to the present invention will be described. (A) As a beam source, liquid metal ions (G a ⁺ , S i +, S i ^{+ +} , B e +

, Be ⁺ , Au ⁺ , Au ⁺⁺ etc.) or a gas ion source (H ⁺ , He e + etc.).

(B) The source gas is an organic metal gas (WF ₆ , W (CO) _fe , Mo (CO) ₆

F e (CO) 5, Ni (CO) 4, Au (CH ₃ ) z (A c A c), Cu (HF

A c A c) ₂ A 1 (CH ₃ ) _Z etc.] or an organic gas [pyrene (C ₁₆ H ₁₀ ), styrene (C ₈ H, ο), HMD S, HMCTS etc.] is used.

(C) The minimum beam diameter is 5 to 10 nm.

(D) The feature points are

(1) The minimum beam diameter is small, which is advantageous for manufacturing ultra-micro three-dimensional structures.

② Electric field * The direction can be controlled by the magnetic field, and a free three-dimensional structure can be manufactured by beam operation alone.

③ Mass is heavier than electrons.

④ The range is small. For example, 50 nm or less at 30 kV, G a ⁺ and S i ⁺

δ It is.

局所 It is possible to restrict locally so that it can be deposited only on the part where you want to deposit

in this way,

(a) An ion beam, for example, G a ⁺ reaches the substrate and deposits are formed by a surface reaction with an organometallic gas. Vertical growth raises the beam focus point.

(b) Secondary electrons are emitted by ion beam collision, and a terrace is formed at the tip of the sediment.

(c) The beam is slightly shifted on the terrace to cause the next growth.

In addition, electron CVD has a problem that electrons penetrate the terrace and reach unnecessary parts, creating unnecessary deposits.In the case of ion beam CVD, the range is orders of magnitude greater than that of electrons. Since it is small, such unnecessary deposits are not formed, and a good micro three-dimensional structure can be manufactured.

The production is performed in the order described above, and the beam is controlled using a computer. In other words, a computer system that performs beam control is constructed.

FIG. 4 is a system configuration diagram of an apparatus for manufacturing a micro three-dimensional structure according to the present invention. In this figure, 2 1 is a Ga liquid metal ion source, 2 2 is a condenser lens, 2 3 is a beam blank power, 2 4 is an aligner, 2 5 is a variable aperture, 2 6 is a sting meter / aligner, Reference numeral 27 denotes an objective lens, reference numeral 28 denotes a scanning electrode, reference numeral 30 denotes a sample stage, reference numeral 31 denotes a sample, reference numeral 32 denotes a secondary charged particle detector, reference numeral 33 denotes a gas supply device, and gas supply device 33. Has a reservoir 34, a heater 35, and the like. This configuration is the same as that of a maskless deposition apparatus using FIB used for processing of LSI. The control system of each unit is omitted.

As shown in this figure, in the present invention, an ion beam focal position control device 40 is connected to the objective lens 27 and the scanning electrode 28 to perform fine focal position control. The focus position control device 40 includes a CPU (central processing unit) 41, a three-dimensional position data memory 42 for producing a small three-dimensional structure, a display device 43, and an input / output interface 44, An input / output device 45. Here, the liquid metal ion source 21 of Ga is usually used and used at an acceleration voltage of 30 kV. A high beam current of about 10 PA is required. In addition, a gas supply device 33 necessary for deposition is provided. Pyrene (C ₁₆ H ₁₀ ) as a raw material is put into the reservoir 34, and the reservoir 34 and the gas path are heated by the heater 35. Heat and sublimate.

Hereinafter, specific examples of the micro three-dimensional structure will be described.

The following micro three-dimensional structures were produced using organic gas mainly in the C system and metal ions using monovalent Ga ions. In this example, a film made by CVD using Ga ⁺ FIB at an acceleration voltage of 3 OkV using pyrene (C ₁₆ H ₁₀ ) as an organic gas, and a diamond-like force by Raman spectroscopy It has been confirmed that it is one Bonn.

FIG. 5 is an explanatory view of a micro three-dimensional structure showing a first embodiment of the present invention.

In this example, the organic gas is mainly of the C type, the metal ion is a monovalent Ga ion, and three image transformations (40 second cycle) are performed in 2 minutes, the diameter is 0.6 m, and the line is A coil 51 with a diameter of 0.08 µm was produced. The carbon microcoil manufactured in this way can be used as an effective device for absorbing electromagnetic waves that may cause malfunctions of medical equipment.

FIG. 6 is an explanatory view of a micro three-dimensional structure showing a second embodiment of the present invention.

In this embodiment, Ga ⁺ FIB accelerating voltage 3 O k V, the beam current 1 6 PA, 3 00 seconds, the outer diameter ų ₃ is 2. 7 5 m, the height h, is 6. 1 m, the thickness d, was able to produce a bellows 52 with a little over 0.1 μm. The micro-bezel produced in this way is essential for dimensioning when constructing a micro-system. FIG. 7 is an explanatory view of a micro three-dimensional structure showing a third embodiment of the present invention.

In this example, a drill 53 having an outer diameter of 0.1 / m could be produced using a W system as the organic gas and a monovalent Ga ion as the metal ion. By attaching the micro drill made in this way to the tip of the micro motor, minute holes can be made. For example, blood vessels can be made smaller than red blood cells, which can reduce bleeding during drug injection.

FIG. 8 is an explanatory view of a micro three-dimensional structure showing a fourth embodiment of the present invention. In this embodiment, G a + FIB accelerating voltage 3 0 k V, the beam current 1 6 PA, 6 0 0 seconds, the outer diameter 0 ₅ strength 2. 7 5 / m, the height h ₂ of about 1 2 m A micro-glass 54 of the above was produced.

It should be noted that the present invention is not limited to the above embodiments, and various modifications are possible based on the spirit of the present invention, and these are not excluded from the scope of the present invention. As described in detail above, according to the present invention, a micro three-dimensional structure (/ m to nm order outer shape) having a complex structure can be manufactured. Industrial applicability

INDUSTRIAL APPLICABILITY The present invention is suitable for the field of producing a micro three-dimensional structure having a complicated structure, and is applicable to, for example, a semiconductor manufacturing process.

Claims

The scope of the claims

1. In the method of manufacturing a micro three-dimensional structure,

(a) irradiating a focused ion beam while supplying a source gas onto a sample to form a deposit;

(b) a step of emitting secondary electrons upon hitting the deposit with ions, and forming a terrace on the deposit with the secondary electrons;

(c) a step of swinging the focused ion beam in a desired direction of the terrace based on a set amount from a focal position control device;

(d) forming an upper layer deposit at a displaced position on the terrace based on the shaken amount;

(e) repeating the above steps (b) to (d) in order to form a set micro three-dimensional structure.

2. The manufacturing method of claim 1 micro three-dimensional structure according, as the beam source, G a ⁺ as a liquid-metal ^{^{Ion, S i +, S i +}} \ B e +, B e + +, A u ⁺ , Au ⁺⁺ , or H ⁺ , He ⁺ as a gas ion source.

3. The method for producing a micro three-dimensional structure according to claim 1, wherein the raw material gas is WF ₆ , W (CO) ₆ , Mo (CO) ₆ , Fe (CO) ₅ , N i (CO) 4, Au ( CH 3) 2 (a cA c), C u (H FA c Ac) z, method for producing a three-dimensional nanostructure, characterized in that the a 1 (CH ₃₎ 2.

4. The manufacturing method of claim 1 micro three-dimensional structure according, wherein the raw material gas, pyrene as an organic gas (C ₁₆ H _10), styrene _{_{(C s H 8), HMDS}} , is HMCT S A method for producing a micro three-dimensional structure.

5. In the micro three-dimensional structure manufacturing equipment,

(a) a sample mounted on a variable temperature sample stage,

(b) a focused ion beam source;

(c) a gas supply device;

(d) a focus position control device for the focused ion beam, (e) forming a deposit on the sample by the focused ion beam CVD, forming a terrace on the deposit, and turning the focused ion beam in a desired direction of the terrace to a set amount from the focal position control device. An apparatus for producing a micro three-dimensional structure, characterized in that the upper layer deposit is formed while sequentially shaking the three-dimensional structure based on the predetermined three-dimensional structure.

6. A micro three-dimensional structure obtained by the method for manufacturing a micro three-dimensional structure according to claim 1, wherein the micro three-dimensional structure is a coil whose outer dimensions are on the order of several m to nm.

7. The micro three-dimensional structure according to claim 6, wherein the micro three-dimensional structure is a micro coil having a diameter of 0.6 μm and a wire diameter of 0.08 m.

8. A micro three-dimensional structure obtained by the method for manufacturing a micro three-dimensional structure according to claim 1, wherein the external dimensions of the micro three-dimensional structure are bellows on the order of several meters to nm.

9. The micro three-dimensional structure according to claim 8, wherein the micro three-dimensional structure is a micro bellows having an outer diameter of 2.7 δ um, a height of 6.1 1111, and a wall thickness of more than 0.1〃m. The featured micro three-dimensional structure.

10. A micro three-dimensional structure, wherein the micro three-dimensional structure obtained by the method for manufacturing a micro three-dimensional structure according to claim 1 is a drill having an outer dimension on the order of several m to nm.

11. The micro three-dimensional structure according to claim 10, wherein the micro three-dimensional structure is a microphone mouth drill having an outer diameter of 0.1 m.

1 2. A micro three-dimensional structure which is obtained by the method for manufacturing a micro three-dimensional structure according to claim 1 and is a glass three-dimensional structure having an outer dimension of several m / m.

1 3. The micro three-dimensional structure according to claim 12, wherein the micro three-dimensional structure has an outer diameter of 2.

A micro three-dimensional structure characterized by a micro wine glass with a height of about 75 m and a height of about 12 m.

1 4. The micro three-dimensional structure obtained by the method for manufacturing a micro three-dimensional structure according to claim 1 is a gas having an acceleration voltage of 30 kV using pyrene (C ₁₆ H _{1 ()} ) as an organic gas. ⁺ A micro three-dimensional structure that is a diamond-like force generated by a focused ion beam.