WO2001022444A1 - Monolithic integrated transformer - Google Patents

Monolithic integrated transformer Download PDF

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Publication number
WO2001022444A1
WO2001022444A1 PCT/EP2000/009129 EP0009129W WO0122444A1 WO 2001022444 A1 WO2001022444 A1 WO 2001022444A1 EP 0009129 W EP0009129 W EP 0009129W WO 0122444 A1 WO0122444 A1 WO 0122444A1
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WO
WIPO (PCT)
Prior art keywords
conductor tracks
integrated transformer
primary
winding
monolithically integrated
Prior art date
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PCT/EP2000/009129
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German (de)
French (fr)
Inventor
Werner SIMBÜRGER
Hans-Dieter Wohlmuth
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Infineon Technologies Ag
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Filing date
Publication date
Application filed by Infineon Technologies Ag filed Critical Infineon Technologies Ag
Priority to EP00966050A priority Critical patent/EP1159750A1/en
Priority to JP2001525723A priority patent/JP3656050B2/en
Publication of WO2001022444A1 publication Critical patent/WO2001022444A1/en
Priority to US09/859,831 priority patent/US6580334B2/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F27/00—Details of transformers or inductances, in general
    • H01F27/28—Coils; Windings; Conductive connections
    • H01F27/2804—Printed windings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F21/00—Variable inductances or transformers of the signal type
    • H01F21/12—Variable inductances or transformers of the signal type discontinuously variable, e.g. tapped
    • H01F2021/125—Printed variable inductor with taps, e.g. for VCO

Definitions

  • the invention relates to a monolithically integrated transformer, in particular a high-frequency transformer with the highest possible coupling factor.
  • Such a transformer is known from US Pat. No. 4,816,784, in which the conductor tracks of the windings and crossovers are arranged in such a way that adjacent conductor tracks belong to different windings in order to achieve particularly good magnetic coupling.
  • the object on which the invention is based is to provide a monolithically integrated transformer with a smaller number of secondary turns than the primary number of turns, which, using three possible metallization levels of a conventional silicon-bipolar semiconductor technology, has a particularly high coupling factor.
  • the essential idea of the present invention is to provide windings with slots or to connect conductor tracks of this winding in parallel and to arrange the conductor tracks of another winding between these conductor tracks connected in parallel.
  • the other winding can also be slotted accordingly, for example.
  • FIG. 1 shows a winding diagram and a circuit diagram of a transformer according to the invention
  • FIG. 2 shows a spatial representation of the transformer of FIG. 1 from the view from above and
  • Figure 3 is a corresponding representation from the bottom view.
  • a transformer according to the invention is shown in its winding diagram using a 6: 2 transformer with primary and secondary-side center tapping.
  • a first primary connection P + and a primary center tap PCT there are three turns P1, P2 and P3 between the primary-side center tap PCT and a second primary-side connection P- there are three further turns P4, P5 and P6.
  • a turn S1 consisting of three interconnects connected in parallel.
  • a turn S2 which also consists of three interconnects connected in parallel.
  • conductor tracks are arranged in the form of concentric circles except for connection areas VI ... V6 and intersection areas K, Kl ... K5, which in FIG. 1 are designated 1 to 12 in order of decreasing radius.
  • the first primary winding P1 consists of the outer conductor track 1 of a half crossing K 1 of the conductor track 3 1 and a half crossing K 2, which establishes a connection to the conductor track 5 and thus to the winding P2.
  • the conductor track 5 of the winding P2 is connected to the conductor track 8 ′ via a half crossing K3 and the half crossing K4 to the conductor track 10 already belonging to the winding P3.
  • the conductor track 10 belonging to the winding P3 is connected to the primary-side center tap PCT via a half crossing K5 and a conductor track 12 '.
  • the windings P4, P5 and P6 are arranged in mirror image, the center telance tap PCT via the conductor 12 of the winding P4 and the other half of the intersection K5 are connected via the other half of the intersection K4 to the conductor 8, which in turn already belongs to the winding P5.
  • the winding P5 consists of the conductor 8 of the other half of the intersection K3, the conductor 5 * and the other half of the intersection K2, which is connected to the conductor 3.
  • the winding P6 consists of the conductor 3 of the other half of the node Kl and the conductor 1 'which is connected to the terminal P-.
  • the first secondary winding S1 between the connection S + and the center tap SCT is formed by a connection area VI, three parallel interconnects 2, 4 and 6, a connection area V3, a half crossover area K, a connection area V6, three parallel interconnects 11 '. , 9 'and 7 * and a connection area V7.
  • the second secondary winding S2 between the center tap SCT and the connection S- is connected by a connecting area V2, three parallel interconnects 2 ', 4' and 6 *, a connecting element V5, a half crossing area K, a connecting area V4, three connected in parallel Conductor tracks 7, 9 and 11 and the connection area V7 formed.
  • Both the two primary windings and the two secondary windings practically form two mirror-image spirals lying one inside the other, with primary windings lying within the secondary windings apart from connection or crossover areas.
  • a particularly good magnetic coupling is achieved by an essentially circular and concentric arrangement of the conductor tracks.
  • the circular shape is approximated in the current implementation by a polygon with the number of corners N> 4.
  • FIGS. 2 and 3 show a spatial representation of this exemplary transformer, FIG. 2 viewed from the top and FIG. 3 viewed from the bottom. It is clear from FIG. 2 that the primary windings are in two metallization layers that are plated through in the area of the connection and crossover areas Ml and M2 is located, where the connections P + and P- are also available.
  • the center tap PCT lies in a third metallization layer M3 and is connected in the area of the connection and crossover area via vias to conductor tracks of the first and second metallization layers. It is clear from FIG.
  • the secondary windings extend outside the connection and crossover regions over all three metallization layers and are connected via plated-through holes D to secondary-side connections S +, SCT and S- located in the third metallization layer.
  • the slotted secondary windings are dimensioned such that the ohmic resistance due to the larger extent in each partial winding or in the conductor tracks 2, 4, 6, 7, 9 and 11 or is the same size in the conductor tracks 2 *, 4 ', 6', 7 * 9 'and 11'.
  • This is achieved in that the cross section of the conductor tracks of the secondary winding increases linearly in the radial direction. Since the thickness of the metallization layers is largely constant, this practically means a linear increase in the conductor track width.
  • the primary winding can also be slotted accordingly.
  • the primary windings can also be slotted at the same time, windings then practically lying one inside the other and the parallel interconnects of different windings alternating in the radial direction.
  • the absolute size of the transformer is practically irrelevant, but only determines the frequency range of the optimal radio tion or the natural resonance frequencies.
  • the diameter of an optimal transformer for frequencies from 800 to 900 MHz is, for example, approx. 400 ⁇ m.
  • transformers can be used to implement fully monolithically integrated high-frequency power amplifiers with high efficiency in silicon bipolar technology for mobile radio or GSM mobile parts, since this enables high-frequency adaptation between high-frequency amplifier stages without external components.

Abstract

The invention relates to a monolithic integrated transformer, especially for high frequency application in for example GSM-mobile components wherein a coupling factor is attained by using slotted windings and components introduced therein from another winding. Said transformer can be produced according to standard silicon bipolar technology with three metallic layers. The production of said transformer do not involve any additional expenditure.

Description

Beschreibungdescription
Monolithisch integrierter Transformator.Monolithically integrated transformer.
Die Erfindung betrifft einen monolithisch integrierten Transformator, insbesondere einen Hochfrequenztransformator mit einem möglichst hohen Koppelfaktor.The invention relates to a monolithically integrated transformer, in particular a high-frequency transformer with the highest possible coupling factor.
Ein derartiger Transformator ist aus dem US Patent 4,816,784 bekannt, bei dem die Leiterbahnen der Windungen und Überkreuzungen so angeordnet sind, daß nebeneinander liegende Leiterbahnen zu unterschiedlichen Wicklungen gehören, um eine besonders gute magnetische Kopplung zu erreichen.Such a transformer is known from US Pat. No. 4,816,784, in which the conductor tracks of the windings and crossovers are arranged in such a way that adjacent conductor tracks belong to different windings in order to achieve particularly good magnetic coupling.
Die der Erfindung zugrundeliegende Aufgabe besteht nun darin, einen monolithisch integrierten Transformator mit einer kleineren Sekundärwendungszahl als Primärwindungszahl anzugeben, der unter Ausnutzung von drei möglichen Metallisierungsebenen einer konventionellen Silizium-Bipolar-Halbleitertechnologie einen besonders hohen Koppelfaktor aufweist.The object on which the invention is based is to provide a monolithically integrated transformer with a smaller number of secondary turns than the primary number of turns, which, using three possible metallization levels of a conventional silicon-bipolar semiconductor technology, has a particularly high coupling factor.
Diese Aufgabe wird erfindungsgemäß durch die Merkmale des Patentanspruchs 1 gelöst.This object is achieved by the features of claim 1.
Vorteilhafte Ausgestaltungen der Erfindung ergeben sich aus den weiteren Ansprüchen.Advantageous embodiments of the invention result from the further claims.
Die wesentliche Idee der vorliegenden Erfindung besteht darin, Wicklungen mit Schlitzen zu versehen bzw. Leiterbahnen dieser Wicklung parallel zu schalten und zwischen diesen parallel geschalteten Leiterbahnen die Leiterbahnen einer anderen Wicklung anzuordnen. Die andere Wicklung kann dabei beispielsweise auch entsprechend geschlitzt sein.The essential idea of the present invention is to provide windings with slots or to connect conductor tracks of this winding in parallel and to arrange the conductor tracks of another winding between these conductor tracks connected in parallel. The other winding can also be slotted accordingly, for example.
Im folgenden wird die Erfindung anhand eines konkreten Ausführungsbeispiels näher erläutert. Dabei zeigt Figur 1 ein Wickelschema und ein Schaltbild eines erfindungsgemäßen Transformators,The invention is explained in more detail below on the basis of a specific exemplary embodiment. It shows FIG. 1 shows a winding diagram and a circuit diagram of a transformer according to the invention,
Figur 2 eine räumliche Darstellung des Transformators von Fi- gur 1 aus der Sicht von oben undFIG. 2 shows a spatial representation of the transformer of FIG. 1 from the view from above and
Figur 3 eine entsprechende Darstellung aus der Sicht von unten.Figure 3 is a corresponding representation from the bottom view.
In Figur 1 ist ein erfindungsgemäßer Transformator anhand eines 6:2-Ubertragers mit primär- und sekundärseitiger Mittelanzapfung in seinem Wickelschema gezeigt. Zwischen einen ersten Primäranschluß P+ und einer primären Mittelanzapfung PCT liegen drei Windungen Pl, P2 und P3 zwischen der primär- seitigen Mittelanzapfung PCT und einem zweiten primärseitigen Anschluß P- liegen weitere drei Windungen P4, P5 und P6. Zwischen einem ersten sekundärseitigen Anschluß S+ und einer se- kundärseitigen Mittelanzapfung SCT liegt eine aus drei parallelgeschalteten Leiterbahnen bestehende Windung Sl. Zwischen der sekundärseitigen Mittelanzapfung SCT und einem zweiten Anschluß der sekundärseitigen Wicklung liegt eine ebenfalls aus drei parallel geschalteten Leiterbahnen bestehende Windung S2. In dem Wickelschema von Figur 1 sind Leiterbahnen bis auf Verbindungsgebiete VI ... V6 und Kreuzungsgebiete K, Kl ... K5 in Form von konzentrischen Kreisen angeordnet, die in Figur 1 mit kleiner werdendem Radius der Reihe nach mit 1 bis 12 bezeichnet sind. Die erste Primärwicklung Pl besteht aus der äußeren Leiterbahn 1 einer halben Kreuzung Kl der Leiterbahn 31 und einer halben Kreuzung K2, die eine Verbin- düng zur Leiterbahn 5 und damit zur Wicklung P2 herstellt.In Figure 1, a transformer according to the invention is shown in its winding diagram using a 6: 2 transformer with primary and secondary-side center tapping. Between a first primary connection P + and a primary center tap PCT there are three turns P1, P2 and P3 between the primary-side center tap PCT and a second primary-side connection P- there are three further turns P4, P5 and P6. Between a first connection S + on the secondary side and a secondary tap SCT on the secondary side there is a turn S1 consisting of three interconnects connected in parallel. Between the secondary-side center tap SCT and a second connection of the secondary-side winding is a turn S2, which also consists of three interconnects connected in parallel. In the winding diagram of FIG. 1, conductor tracks are arranged in the form of concentric circles except for connection areas VI ... V6 and intersection areas K, Kl ... K5, which in FIG. 1 are designated 1 to 12 in order of decreasing radius. The first primary winding P1 consists of the outer conductor track 1 of a half crossing K 1 of the conductor track 3 1 and a half crossing K 2, which establishes a connection to the conductor track 5 and thus to the winding P2.
Die Leiterbahn 5 der Wicklung P2 ist über eine halbe Kreuzung K3 mit der Leiterbahn 8' und der halben Kreuzung K4 mit der bereits zur Wicklung P3 gehörenden Leiterbahn 10 verbunden. Die zur Wicklung P3 gehörende Leiterbahn 10 ist über eine halbe Kreuzung K5 und eine Leiterbahn 12' mit der primärseitigen Mittelanzapfung PCT verbunden. Die Wicklungen P4, P5 und P6 sind dazu spiegelbildlich angeordnet, wobei die Mit- telanzapfung PCT über die Leiterbahn 12 der Wicklung P4 und die andere Hälfte der Kreuzung K5 über die andere Hälfte der Kreuzung K4 mit der Leiterbahn 8 verbunden sind, die bereits ihrerseits zur Wicklung P5 gehört. Die Wicklung P5 besteht aus der Leiterbahn 8 der anderen Hälfte der Kreuzung K3, der Leiterbahn 5* und der anderen Hälfte der Kreuzung K2, die mit der Leiterbahn 3 verbunden ist. Die Wicklung P6 besteht aus der Leiterbahn 3 der anderen Hälfte des Knotens Kl und der Leiterbahn 1' die mit dem Anschluß P- verbunden ist. Die er- ste Sekundärwicklung Sl zwischen dem Anschluß S+ und der Mittelanzapfung SCT wird durch ein Verbindungsgebiet VI drei parallel geschaltete Leiterbahnen 2, 4 und 6, ein Verbindungsgebiet V3, ein halbes Überkreuzungsgebiet K, ein Verbin- dungsgebiet V6, drei parallel geschaltete Leiterbahnen 11', 9' und 7* sowie ein Verbindungsgebiet V7 gebildet. Die zweite Sekundärwicklung S2 zwischen der Mittelanzapfung SCT und dem Anschluß S- wird durch ein Verbindungsgebiet V2, drei parallel geschaltete Leiterbahnen 2', 4' und 6*, ein Verbindungselement V5, ein halbes Kreuzungsgebiet K, ein Verbindungsge- biet V4, drei parallel geschaltete Leiterbahnen 7, 9 und 11 und das Verbindungsgebiet V7 gebildet. Sowohl die beiden Primärwicklungen als auch die beiden Sekundärwicklungen bilden praktisch zwei ineinander liegende spiegelbildliche Spiralen, wobei abgesehen von Verbindungs- bzw. Überkreuzungsgebieten Primärwindungen innerhalb der Sekundärwicklungen liegen.The conductor track 5 of the winding P2 is connected to the conductor track 8 ′ via a half crossing K3 and the half crossing K4 to the conductor track 10 already belonging to the winding P3. The conductor track 10 belonging to the winding P3 is connected to the primary-side center tap PCT via a half crossing K5 and a conductor track 12 '. For this purpose, the windings P4, P5 and P6 are arranged in mirror image, the center telance tap PCT via the conductor 12 of the winding P4 and the other half of the intersection K5 are connected via the other half of the intersection K4 to the conductor 8, which in turn already belongs to the winding P5. The winding P5 consists of the conductor 8 of the other half of the intersection K3, the conductor 5 * and the other half of the intersection K2, which is connected to the conductor 3. The winding P6 consists of the conductor 3 of the other half of the node Kl and the conductor 1 'which is connected to the terminal P-. The first secondary winding S1 between the connection S + and the center tap SCT is formed by a connection area VI, three parallel interconnects 2, 4 and 6, a connection area V3, a half crossover area K, a connection area V6, three parallel interconnects 11 '. , 9 'and 7 * and a connection area V7. The second secondary winding S2 between the center tap SCT and the connection S- is connected by a connecting area V2, three parallel interconnects 2 ', 4' and 6 *, a connecting element V5, a half crossing area K, a connecting area V4, three connected in parallel Conductor tracks 7, 9 and 11 and the connection area V7 formed. Both the two primary windings and the two secondary windings practically form two mirror-image spirals lying one inside the other, with primary windings lying within the secondary windings apart from connection or crossover areas.
Durch eine im wesentlichen kreisförmige und konzentrische Anordnung der Leiterbahnen wird eine besonders gute magnetische Verkopplung erreicht. Die Kreisform wird dabei in der p aktischen Realisierung durch ein Polygon mit der Eckenzahl N > 4 angenähert.A particularly good magnetic coupling is achieved by an essentially circular and concentric arrangement of the conductor tracks. The circular shape is approximated in the current implementation by a polygon with the number of corners N> 4.
In den Figuren 2 und 3 ist eine räumliche Darstellung dieses beispielhaften Transformators gezeigt, wobei Figur 2 von der Oberseite her betrachtet und Figur 3 von der Unterseite her betrachtet ist. Aus Figur 2 wird deutlich, daß sich die Primärwicklungen in zwei im Bereich der Verbindungs- und Überkreuzungsgebiete durchkontaktierte Metallisierungsschichten Ml und M2 befindet, wo auch die Anschlüsse P+ und P- vorhanden sind. Die Mittelanzapfung PCT liegt in einer dritten Metallisierungsschicht M3 und ist im Bereich des Verbindungsund Überkreuzungsgebietes über Durchkontaktierungen mit Lei- terbahnen der ersten und zweiten Metallisierungsschicht verbunden. Aus Figur 3 wird deutlich, daß sich die Sekundärwicklungen außerhalb der Verbindungs- und Überkreuzungsgebiete über alle drei Metallisierungsschicht erstrecken und über Durchkontaktierungen D mit in der dritten Metallisierungs- schicht befindlichen sekundärseitigen Anschlüssen S+, SCT und S- verbunden sind. Durch die sekundärseitige Ausnutzung aller drei Metallisierungslagen wird der ohmsche Widerstand der Sekundärwicklungen minimiert, was zwar von Vorteil jedoch für die Erfindung nicht zwingend ist.FIGS. 2 and 3 show a spatial representation of this exemplary transformer, FIG. 2 viewed from the top and FIG. 3 viewed from the bottom. It is clear from FIG. 2 that the primary windings are in two metallization layers that are plated through in the area of the connection and crossover areas Ml and M2 is located, where the connections P + and P- are also available. The center tap PCT lies in a third metallization layer M3 and is connected in the area of the connection and crossover area via vias to conductor tracks of the first and second metallization layers. It is clear from FIG. 3 that the secondary windings extend outside the connection and crossover regions over all three metallization layers and are connected via plated-through holes D to secondary-side connections S +, SCT and S- located in the third metallization layer. By utilizing all three metallization layers on the secondary side, the ohmic resistance of the secondary windings is minimized, which is advantageous but not essential for the invention.
In einer weiteren vorteilhaften Ausgestaltung der Erfindung sind die geschlitzten Sekundärwicklungen, wie in Figur 2 und 3, so bemessen, daß der ohmsche Widerstand infolge des größeren Umfangs in jeder Teilwicklung bzw. in den Leiterbahnen 2, 4, 6, 7, 9 und 11 bzw. in den Leiterbahnen 2*, 4', 6', 7* 9' und 11' gleich groß ist. Dies wird dadurch erreicht, daß der Querschnitt der Leiterbahnen der Sekundärwicklung in radialer Richtung linear zunimmt. Da die Dicke der Metallisierungsschichten weitgehend konstant ist, bedeutet dies praktisch eine lineare Zunahme der Leiterbahnbreite.In a further advantageous embodiment of the invention, the slotted secondary windings, as in Figures 2 and 3, are dimensioned such that the ohmic resistance due to the larger extent in each partial winding or in the conductor tracks 2, 4, 6, 7, 9 and 11 or is the same size in the conductor tracks 2 *, 4 ', 6', 7 * 9 'and 11'. This is achieved in that the cross section of the conductor tracks of the secondary winding increases linearly in the radial direction. Since the thickness of the metallization layers is largely constant, this practically means a linear increase in the conductor track width.
Selbstverständlich kann anstelle der Sekundärwicklung auch die Primärwicklung entsprechend geschlitzt sein.Of course, instead of the secondary winding, the primary winding can also be slotted accordingly.
Es können aber auch neben den Sekundärwicklungen gleichzeitig die Primärwicklungen geschlitzt sein, wobei dann Wicklungen praktisch ineinanderliegen und sich die parallelgeschalteten Leiterbahnen unterschiedlicher Wicklungen in radialer Richtung abwechseln.However, in addition to the secondary windings, the primary windings can also be slotted at the same time, windings then practically lying one inside the other and the parallel interconnects of different windings alternating in the radial direction.
Die absolute Größe des Trafos spielt praktisch keine Rolle, sondern bestimmt nur den Frequenzbereich der optimalen Funk- tion bzw. die Eigenresonanzfrequenzen. Der Durchmesser eines optimalen Transformators für Frequenzen von 800 bis 900 MHz liegt beispielsweise bei ca. 400 μm.The absolute size of the transformer is practically irrelevant, but only determines the frequency range of the optimal radio tion or the natural resonance frequencies. The diameter of an optimal transformer for frequencies from 800 to 900 MHz is, for example, approx. 400 μm.
Durch derartige Transformatoren können vollständig monolithisch integrierte Hochfrequenzleistungsverstärker mit hohem Wirkungsgrad in Silizium-Bipolar-Technologie für den Mobilfunk bzw. GSM-Mobilteile realisiert werden, da hiermit eine Hochfrequenzanpassung zwischen Hochfrequenzverstärkerstu- fen ohne externe Bauelemente möglich wird. Such transformers can be used to implement fully monolithically integrated high-frequency power amplifiers with high efficiency in silicon bipolar technology for mobile radio or GSM mobile parts, since this enables high-frequency adaptation between high-frequency amplifier stages without external components.

Claims

Patentansprüche claims
1. Monolithisch integrierter Transformator, bei dem mindestens eine Primärwicklung und/oder Sekundärwick- lung (Sl, S2) Schlitze derart aufweist, daß ihre jeweiligen Leiterbahnen (2, 4, 6; 7, 9, 11) parallel geschaltet sind, und bei dem zwischen diesen parallel geschalteten Leiterbahnen mindestens Teile (3, 5; 8, 10) der jeweiligen anderen Wick- lung (Pl ... P6) vorhanden sind.1. Monolithically integrated transformer in which at least one primary winding and / or secondary winding (S1, S2) has slots in such a way that their respective conductor tracks (2, 4, 6; 7, 9, 11) are connected in parallel, and in which at least parts (3, 5; 8, 10) of the respective other winding (Pl ... P6) are present between these parallel interconnects.
2. Monolithisch integrierter Transformator nach Anspruch 1, bei dem sowohl die Primär- als auch die Sekundärwicklung neben Verbindungsgebieten (VI ... V7) und Kreuzungsgebieten (K, Kl ... K5) im wesentlichen konzentrisch angeordnete kreisbo- gensegmentförmige Leiterbahnen (1 ... 12; 1' ... 12') aufweist.2. Monolithically integrated transformer according to claim 1, in which both the primary and the secondary winding in addition to connection areas (VI ... V7) and intersection areas (K, Kl ... K5) essentially concentrically arranged circular segment-shaped conductor tracks (1. .. 12; 1 '... 12').
3. Monolithisch integrierter Transformator nach Anspruch 1 oder 2, bei dem der Querschnitt der Leiterbahnen (2, 4, 6; 7, 9, 11) in radialer Richtung linear zunimmt.3. Monolithically integrated transformer according to claim 1 or 2, wherein the cross section of the conductor tracks (2, 4, 6; 7, 9, 11) increases linearly in the radial direction.
4. Monolithisch integrierter Transformator nach Anspruch 1 bis 3, bei dem sich die Primärwicklungen, bis auf die Verbindungsund Kreuzungsgebiete vollständig über zwei Metallisierungsschichten (Ml, M2) und die Sekundärwicklungen, bis auf die Verbindungsgebiete und Kreuzungsgebiete, sich vollständig über drei Metallisierungsebenen (Ml ... M3) erstrecken.4. A monolithically integrated transformer according to claim 1 to 3, wherein the primary windings, except for the connection and crossing areas, completely over two metallization layers (Ml, M2) and the secondary windings, except for the connection areas and crossing areas, completely over three metallization levels (Ml. .. M3) extend.
5. Monolithisch integrierter Transformator nach einem der vorhergehenden Ansprüche, bei dem die Primärwicklung aus einem ersten Primarwicklungs- teil (Pl ... P3) und einem zweiten Primärwicklungsteil (P4 ... P6) besteht, die über eine Anzapfung (PCT) miteinander verbunden sind und bei dem sich in radialer Richtung die einzelnen Leiterbahnen (1, 5, 10) des ersten Primärwicklungsteils mit Leiterbahnen (3, 8, 12) des zweiten Primärwicklungsteils abwechseln und in ihrer Projektion auf eine gemeinsame Ebene spiegelbildlich verlaufen. 5. Monolithically integrated transformer according to one of the preceding claims, in which the primary winding consists of a first primary winding part (Pl ... P3) and a second primary winding part (P4 ... P6), which are connected to one another via a tap (PCT) are and in which the individual conductor tracks (1, 5, 10) of the first primary winding part alternate with conductor tracks (3, 8, 12) of the second primary winding part in the radial direction and are mirror images of their projection onto a common plane.
PCT/EP2000/009129 1999-09-17 2000-09-18 Monolithic integrated transformer WO2001022444A1 (en)

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EP00966050A EP1159750A1 (en) 1999-09-17 2000-09-18 Monolithic integrated transformer
JP2001525723A JP3656050B2 (en) 1999-09-17 2000-09-18 Monolithic integrated transformer
US09/859,831 US6580334B2 (en) 1999-09-17 2001-05-17 Monolithically integrated transformer

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DE19944741A DE19944741C2 (en) 1999-09-17 1999-09-17 Monolithically integrated transformer

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US6580334B2 (en) 1999-09-17 2003-06-17 Infineon Technologies Ag Monolithically integrated transformer
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US9230726B1 (en) 2015-02-20 2016-01-05 Crane Electronics, Inc. Transformer-based power converters with 3D printed microchannel heat sink
US9735566B1 (en) 2016-12-12 2017-08-15 Crane Electronics, Inc. Proactively operational over-voltage protection circuit
US9742183B1 (en) 2016-12-09 2017-08-22 Crane Electronics, Inc. Proactively operational over-voltage protection circuit
US9780635B1 (en) 2016-06-10 2017-10-03 Crane Electronics, Inc. Dynamic sharing average current mode control for active-reset and self-driven synchronous rectification for power converters
US9831768B2 (en) 2014-07-17 2017-11-28 Crane Electronics, Inc. Dynamic maneuvering configuration for multiple control modes in a unified servo system
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US6580334B2 (en) 2003-06-17
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JP3656050B2 (en) 2005-06-02
EP1159750A1 (en) 2001-12-05
DE19944741C2 (en) 2001-09-13

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