WO2001013433A1 - Spherical shaped integrated circuit utilizing an inductor - Google Patents

Spherical shaped integrated circuit utilizing an inductor Download PDF

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Publication number
WO2001013433A1
WO2001013433A1 PCT/US1999/018337 US9918337W WO0113433A1 WO 2001013433 A1 WO2001013433 A1 WO 2001013433A1 US 9918337 W US9918337 W US 9918337W WO 0113433 A1 WO0113433 A1 WO 0113433A1
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WO
WIPO (PCT)
Prior art keywords
integrated circuit
inductor
antenna
spherical
spherical shaped
Prior art date
Application number
PCT/US1999/018337
Other languages
French (fr)
Inventor
Akira Ishikawa
Original Assignee
Ball Semiconductor, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ball Semiconductor, Inc. filed Critical Ball Semiconductor, Inc.
Priority to PCT/US1999/018337 priority Critical patent/WO2001013433A1/en
Publication of WO2001013433A1 publication Critical patent/WO2001013433A1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/10—Inductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5227—Inductive arrangements or effects of, or between, wiring layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/818—Bonding techniques
    • H01L2224/81801—Soldering or alloying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/1015—Shape
    • H01L2924/1017—Shape being a sphere
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19042—Component type being an inductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/30107—Inductance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance

Definitions

  • the invention relates generally to semiconductor integrated circuits, and more particularly, to an apparatus and method for forming circuits with one or more inductors and a spherical-shaped semiconductor substrate.
  • Electrical devices such as semiconductor integrated circuits are advancing in many ways. For example, many devices are seeing an increase in overall size, and number of components and transistors. Furthermore, devices are encompassing more and more peripheral components on a circuit board. As a result, space is saved and communication speed is increased.
  • Chips are formed from a flat surface semiconductor wafer.
  • the semiconductor wafer is first manufactured in a semiconductor material manufacturing facility and is then provided to a fabrication facility. At the latter facility, several layers are processed onto the semiconductor wafer surface. Once completed, the wafer is then cut into one or more chips and assembled into packages. Although the processed chip includes several layers fabricated thereon, the chip still remains relatively flat. As a result, forming an inductor on a chip is difficult, if not impossible.
  • a power circuit 10 represented here with a single phase rectifier.
  • the power circuit 10 receives alternating current (“AC") power from a source 12 and reduces the voltage level of the source 12 with a transformer 14.
  • the transformer 14 includes a primary coil 16 and a secondary coil 18.
  • the secondary coil 18 is further connected to a bridge circuit 20, which provides a rectified, direct current (“DC”) voltage to a load
  • FIG. 2a and 2b another typical peripheral component for many circuit boards is an antenna for transmitting or receiving electromagnetic waves.
  • Two examples of an antenna include a loop antenna 24 (Fig. 2a) and a helical antenna 26 (Fig. 2b).
  • Antennas have also not been incorporated onto conventional semiconductor devices.
  • the present invention provides an apparatus and method for forming an inductor on the spherical shaped integrated circuit.
  • the inductor may be used in a rectifier circuit and/or an antenna. Further, the antenna can be used to support communications from the integrated circuit device with other components.
  • the present invention accordingly, provides a spherical shaped integrated circuit having an inductor for use in components such as a power circuit and/or an antenna.
  • one embodiment provides an integrated circuit formed around a spherical substrate.
  • the integrated circuit includes one or more one conductive layers. A portion of one of the conductive layers wraps around the spherical substrate to form an inductor.
  • the inductor is used to create a transformer. In another embodiment, the inductor is used as an antenna.
  • Fig. 1 is a schematic of a conventional single phase rectifier.
  • Figs. 2a and 2b are schematics of conventional antennas.
  • Fig. 3 illustrates a spherical-shaped integrated circuit device according to one embodiment of the invention.
  • Fig. 4 illustrates a spherical-shaped integrated circuit device according to another embodiment of the invention. Description of the Preferred Embodiment
  • the reference numeral 50 designates, in general, a semiconductor integrated circuit device, preferably of a generally spherical shape.
  • the device could be of the same type formed according to the technique disclosed in the above-identified Patent Application Ser. No. 08/858,004.
  • the device 50 is covered by an insulative outer coat 52, which may also serve as an identification means for detecting a type (e.g., memory, logic) of the device.
  • a semiconductor substrate 54 Located inside the outer coat 52 is a semiconductor substrate 54 and several integrated circuit ("IC") pattern layers 56.
  • the IC pattern layers includes at least one metal layer 56a.
  • the metal layer 56a may be formed of aluminum by an inductively coupled plasma powder vaporization technique disclosed in Patent Application Ser. No. 09/033,180 filed March 2, 1998, which is hereby incorporated by reference.
  • the metal layer 56a is capable of completely circling the spherical substrate 54. Portions of the metal layer 56a are formed in concentric lines wrapping around the substrate, thereby forming coils 58a and 58b.
  • the metal layer 56a is also isolated from other portions of the integrated circuit 56, as well as any other metal layers, with oxide layers for insulation. Attached to the integrated circuit 56 are several bonding pads (not shown) and solder bumps 60a, 60b, 60c, and 60d.
  • the solder bumps 60a- 60d connect the device 50 to a circuit board 52.
  • two of the solder bumps for example bumps 60a and 60b, are further connected to an AC power source 64.
  • the substrate 54 may include Fe, Co, or
  • Ni Ni. These elements can be used to enhance the properties of inductance formed with the substrate. Further, different power circuits, such as a single transformer 14 without the bridge 20, can be implemented.
  • the reference numeral 100 designates, in general, another semiconductor integrated circuit device, preferably of a generally spherical shape.
  • the device 100 does not require any solder bumps, unlike the device 50 of Fig. 3.
  • Other embodiments may include bonding pads and solder bumps for other purposes.
  • the device 100 includes a plurality of antennas.
  • a first antenna 102 is a helical coil.
  • the antenna 102 is capable of receiving a power pulse to enable the device 100 to operate, similar to U.S. Patent No. 5,625,370, issued Apr. 29, 1997 and entitled Identification System Antenna with Impedance Transformer.
  • Antenna 104 is a loop-type signal receiving antenna.
  • Antenna 106 is a loop-type signal transmitting antenna.
  • the antennas 104, 106 are capable of receiving and transmitting wireless communications. Such communications can be with adjacent devices (not shown) that are on the same circuit board as the device 100, or from devices on another, separate circuit board. Alternatively, the communications can be with remote devices.
  • the device 100 can be part of a badge (also not shown) that an individual carries on his person, vehicle, luggage, etc. Since the device 100 receives a power pulse from the antenna 102, no separate power supply is required. The badge can respond to a power pulse by transmitting data through antenna 106 to identify the individual. The badge can also receive data through antenna 104 for additional purposes.

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

An apparatus and method for forming an inductor on a spherical shaped integrated circuit for use in a rectifier and/or an antenna. The integrated circuit (50) is formed around a spherical substrate (54) and includes a conductive layer (56a). Signal lines formed from the conductive layer wrap around the spherical substrate to form an inductor. The inductor may be used to create a transformer or an antenna.

Description

SPHERICAL SHAPED INTEGRATED CIRCUIT UTILIZING AN INDUCTOR Cross Reference
This is a continuation-in-part of application Serial No. 08/858,004, filed May 16, 1997, which claims priority from provisional application Serial
No. 60/032,340, filed December 4, 1996, now abandoned. Background of the Invention
The invention relates generally to semiconductor integrated circuits, and more particularly, to an apparatus and method for forming circuits with one or more inductors and a spherical-shaped semiconductor substrate. Electrical devices such as semiconductor integrated circuits are advancing in many ways. For example, many devices are seeing an increase in overall size, and number of components and transistors. Furthermore, devices are encompassing more and more peripheral components on a circuit board. As a result, space is saved and communication speed is increased.
However, these semiconductor integrated circuits have not been able to encompass many different circuits. For example, circuits that utilize a conductor coil or an inductor have not been successfully implemented on a semiconductor integrated circuit. This is due, in part, to the relatively flat nature of conventional integrated circuits.
Conventional integrated circuit devices, or "chips," are formed from a flat surface semiconductor wafer. The semiconductor wafer is first manufactured in a semiconductor material manufacturing facility and is then provided to a fabrication facility. At the latter facility, several layers are processed onto the semiconductor wafer surface. Once completed, the wafer is then cut into one or more chips and assembled into packages. Although the processed chip includes several layers fabricated thereon, the chip still remains relatively flat. As a result, forming an inductor on a chip is difficult, if not impossible.
Referring to Fig. 1, one typical peripheral component for many circuit boards is a power circuit 10, represented here with a single phase rectifier. The power circuit 10 receives alternating current ("AC") power from a source 12 and reduces the voltage level of the source 12 with a transformer 14. The transformer 14 includes a primary coil 16 and a secondary coil 18. The secondary coil 18 is further connected to a bridge circuit 20, which provides a rectified, direct current ("DC") voltage to a load
22. Power circuits have not been incorporated onto conventional semiconductor devices.
Referring to Figs. 2a and 2b, another typical peripheral component for many circuit boards is an antenna for transmitting or receiving electromagnetic waves. Two examples of an antenna include a loop antenna 24 (Fig. 2a) and a helical antenna 26 (Fig. 2b). Antennas have also not been incorporated onto conventional semiconductor devices.
In parent Application Ser. No. 08/858,004 filed on May 16, 1997, a method and apparatus for manufacturing spherical-shaped semiconductor integrated circuit devices is disclosed. The present invention provides an apparatus and method for forming an inductor on the spherical shaped integrated circuit. The inductor may be used in a rectifier circuit and/or an antenna. Further, the antenna can be used to support communications from the integrated circuit device with other components. Summary of the Invention
The present invention, accordingly, provides a spherical shaped integrated circuit having an inductor for use in components such as a power circuit and/or an antenna. To this end, one embodiment provides an integrated circuit formed around a spherical substrate. The integrated circuit includes one or more one conductive layers. A portion of one of the conductive layers wraps around the spherical substrate to form an inductor. In one embodiment, the inductor is used to create a transformer. In another embodiment, the inductor is used as an antenna. Brief Description of the Drawings
Fig. 1 is a schematic of a conventional single phase rectifier. Figs. 2a and 2b are schematics of conventional antennas. Fig. 3 illustrates a spherical-shaped integrated circuit device according to one embodiment of the invention. Fig. 4 illustrates a spherical-shaped integrated circuit device according to another embodiment of the invention. Description of the Preferred Embodiment
Referring to Fig. 3, the reference numeral 50 designates, in general, a semiconductor integrated circuit device, preferably of a generally spherical shape. For the sake of example, the device could be of the same type formed according to the technique disclosed in the above-identified Patent Application Ser. No. 08/858,004.
The device 50 is covered by an insulative outer coat 52, which may also serve as an identification means for detecting a type (e.g., memory, logic) of the device. Immediately inside the outer coat 52 is a semiconductor substrate 54 and several integrated circuit ("IC") pattern layers 56. The IC pattern layers includes at least one metal layer 56a. For the sake of example, the metal layer 56a may be formed of aluminum by an inductively coupled plasma powder vaporization technique disclosed in Patent Application Ser. No. 09/033,180 filed March 2, 1998, which is hereby incorporated by reference. The metal layer 56a is capable of completely circling the spherical substrate 54. Portions of the metal layer 56a are formed in concentric lines wrapping around the substrate, thereby forming coils 58a and 58b. The metal layer 56a is also isolated from other portions of the integrated circuit 56, as well as any other metal layers, with oxide layers for insulation. Attached to the integrated circuit 56 are several bonding pads (not shown) and solder bumps 60a, 60b, 60c, and 60d. The solder bumps 60a- 60d connect the device 50 to a circuit board 52. In one embodiment, two of the solder bumps, for example bumps 60a and 60b, are further connected to an AC power source 64. In one embodiment, the coils 58a, 58b corresponding to the two coils
16, 18, of the transformer 14 of Fig. 1. Also, additional portions of the integrated circuit 56 can be used to implement the bridge 20 and the load 22 of Fig. 1. As a result, the entire power circuit 10 of Fig. 1 can be implemented on the device 50 of Fig. 3. In alternate embodiments, the substrate 54 may include Fe, Co, or
Ni. These elements can be used to enhance the properties of inductance formed with the substrate. Further, different power circuits, such as a single transformer 14 without the bridge 20, can be implemented.
Referring now to Fig. 4, the reference numeral 100 designates, in general, another semiconductor integrated circuit device, preferably of a generally spherical shape. The device 100 does not require any solder bumps, unlike the device 50 of Fig. 3. Other embodiments may include bonding pads and solder bumps for other purposes.
The device 100 includes a plurality of antennas. A first antenna 102 is a helical coil. The antenna 102 is capable of receiving a power pulse to enable the device 100 to operate, similar to U.S. Patent No. 5,625,370, issued Apr. 29, 1997 and entitled Identification System Antenna with Impedance Transformer.
Antenna 104 is a loop-type signal receiving antenna. Antenna 106 is a loop-type signal transmitting antenna. The antennas 104, 106 are capable of receiving and transmitting wireless communications. Such communications can be with adjacent devices (not shown) that are on the same circuit board as the device 100, or from devices on another, separate circuit board. Alternatively, the communications can be with remote devices. For example, the device 100 can be part of a badge (also not shown) that an individual carries on his person, vehicle, luggage, etc. Since the device 100 receives a power pulse from the antenna 102, no separate power supply is required. The badge can respond to a power pulse by transmitting data through antenna 106 to identify the individual. The badge can also receive data through antenna 104 for additional purposes. It is understood that several variations may be made in the foregoing. Modifications, changes and substitutions are intended in the foregoing disclosure and in some instances some features of the invention will be employed without a corresponding use of other features. Accordingly, it is appropriate that the appended claims be construed broadly and in a manner consistent with the scope of the invention.

Claims

WHAT IS CLAIMED IS:
1. A spherical shaped integrated circuit device comprising: a spherical substrate; an integrated circuit formed on the substrate, the integrated circuit including at least one conductive layer; wherein a portion of the conductive layer wraps around the spherical substrate to form an inductor.
2. The device of claim 1 wherein the portion of the conductive layer is used to create a transformer.
3. The device of claim 2 wherein the transformer is part of a power circuit.
4. The device of claim 1 wherein the portion of the conductive layer is used as an antenna.
PCT/US1999/018337 1999-08-13 1999-08-13 Spherical shaped integrated circuit utilizing an inductor WO2001013433A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PCT/US1999/018337 WO2001013433A1 (en) 1999-08-13 1999-08-13 Spherical shaped integrated circuit utilizing an inductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US1999/018337 WO2001013433A1 (en) 1999-08-13 1999-08-13 Spherical shaped integrated circuit utilizing an inductor

Publications (1)

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WO2001013433A1 true WO2001013433A1 (en) 2001-02-22

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106132101A (en) * 2016-08-30 2016-11-16 重庆市铜梁区康腾电子科技有限公司 Spherical circuit transfer interpreter
CN106163125A (en) * 2016-08-30 2016-11-23 重庆市铜梁区康腾电子科技有限公司 Circuit board transfer means

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4879466A (en) * 1987-02-06 1989-11-07 Hitachi, Ltd. Semiconductor radiation detector
US5053672A (en) * 1990-05-29 1991-10-01 Clapham Thomas J Energy converter apparatus
US5801591A (en) * 1997-05-13 1998-09-01 Verticom, Inc. Microwave linear oscillator/amplifier utilizing a multicoupled ferrite resonator
JPH1148115A (en) * 1997-06-02 1999-02-23 Mitsui High Tec Inc Device for grinding and polishing sphere, and grinding and polishing method for silicon sphere using the same
US5945725A (en) * 1996-12-04 1999-08-31 Ball Semiconductor, Inc. Spherical shaped integrated circuit utilizing an inductor

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4879466A (en) * 1987-02-06 1989-11-07 Hitachi, Ltd. Semiconductor radiation detector
US5053672A (en) * 1990-05-29 1991-10-01 Clapham Thomas J Energy converter apparatus
US5945725A (en) * 1996-12-04 1999-08-31 Ball Semiconductor, Inc. Spherical shaped integrated circuit utilizing an inductor
US5955776A (en) * 1996-12-04 1999-09-21 Ball Semiconductor, Inc. Spherical shaped semiconductor integrated circuit
US5801591A (en) * 1997-05-13 1998-09-01 Verticom, Inc. Microwave linear oscillator/amplifier utilizing a multicoupled ferrite resonator
JPH1148115A (en) * 1997-06-02 1999-02-23 Mitsui High Tec Inc Device for grinding and polishing sphere, and grinding and polishing method for silicon sphere using the same

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106132101A (en) * 2016-08-30 2016-11-16 重庆市铜梁区康腾电子科技有限公司 Spherical circuit transfer interpreter
CN106163125A (en) * 2016-08-30 2016-11-23 重庆市铜梁区康腾电子科技有限公司 Circuit board transfer means
CN106163125B (en) * 2016-08-30 2018-08-17 重庆市铜梁区康腾电子科技有限公司 Circuit board transfer means
CN106132101B (en) * 2016-08-30 2018-10-09 重庆市铜梁区康腾电子科技有限公司 Spherical circuit transfer interpreter

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