WO2001005726A3 - METHOD FOR IMPROVING THE SURFACE SMOOTHNESS, THE CRYSTAL STRUCTURE AND THE MICROWAVE SURFACE RESISTANCE OF YBa2Cu3O7-δ HIGH-TEMPERATURE SUPERCONDUCTOR FILMS GROWN ON CeO2-BUFFERED r-CUT SAPPHIRE SUBSTRATES - Google Patents

METHOD FOR IMPROVING THE SURFACE SMOOTHNESS, THE CRYSTAL STRUCTURE AND THE MICROWAVE SURFACE RESISTANCE OF YBa2Cu3O7-δ HIGH-TEMPERATURE SUPERCONDUCTOR FILMS GROWN ON CeO2-BUFFERED r-CUT SAPPHIRE SUBSTRATES Download PDF

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Publication number
WO2001005726A3
WO2001005726A3 PCT/KR2000/000778 KR0000778W WO0105726A3 WO 2001005726 A3 WO2001005726 A3 WO 2001005726A3 KR 0000778 W KR0000778 W KR 0000778W WO 0105726 A3 WO0105726 A3 WO 0105726A3
Authority
WO
WIPO (PCT)
Prior art keywords
ceo2
buffered
yba2cu3o7
improving
crystal structure
Prior art date
Application number
PCT/KR2000/000778
Other languages
French (fr)
Other versions
WO2001005726A2 (en
Inventor
Sang Young Lee
Original Assignee
Sang Young Lee
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sang Young Lee filed Critical Sang Young Lee
Publication of WO2001005726A2 publication Critical patent/WO2001005726A2/en
Publication of WO2001005726A3 publication Critical patent/WO2001005726A3/en

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
    • H01L21/86—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body the insulating body being sapphire, e.g. silicon on sapphire structure, i.e. SOS
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/225—Complex oxides based on rare earth copper oxides, e.g. high T-superconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0296—Processes for depositing or forming superconductor layers
    • H10N60/0576—Processes for depositing or forming superconductor layers characterised by the substrate
    • H10N60/0604—Monocrystalline substrates, e.g. epitaxial growth

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)

Abstract

The invention comprises post-annealing of CeO2-buffered r-cut sapphire substrate at a temperature range of 960 - 1050 °C and growing high temperature superconductor YBa2Cu3O7-δ films on the post-annealed CeO2-buffered r-cut sapphire substrate.
PCT/KR2000/000778 1999-07-16 2000-07-18 METHOD FOR IMPROVING THE SURFACE SMOOTHNESS, THE CRYSTAL STRUCTURE AND THE MICROWAVE SURFACE RESISTANCE OF YBa2Cu3O7-δ HIGH-TEMPERATURE SUPERCONDUCTOR FILMS GROWN ON CeO2-BUFFERED r-CUT SAPPHIRE SUBSTRATES WO2001005726A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1999/29011 1999-07-16
KR1019990029011A KR100338250B1 (en) 1999-07-16 1999-07-16 Method for improving the surface smoothness of YBa2Cu3O7-δhigh-temperature superconductor films grown on CeO2-buffered r-cut sapphire substrates

Publications (2)

Publication Number Publication Date
WO2001005726A2 WO2001005726A2 (en) 2001-01-25
WO2001005726A3 true WO2001005726A3 (en) 2002-03-28

Family

ID=19602533

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2000/000778 WO2001005726A2 (en) 1999-07-16 2000-07-18 METHOD FOR IMPROVING THE SURFACE SMOOTHNESS, THE CRYSTAL STRUCTURE AND THE MICROWAVE SURFACE RESISTANCE OF YBa2Cu3O7-δ HIGH-TEMPERATURE SUPERCONDUCTOR FILMS GROWN ON CeO2-BUFFERED r-CUT SAPPHIRE SUBSTRATES

Country Status (2)

Country Link
KR (1) KR100338250B1 (en)
WO (1) WO2001005726A2 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102008016257B4 (en) * 2008-03-29 2010-01-28 Zenergy Power Gmbh High-temperature superconductor layer arrangement and method for producing such
JP6090794B2 (en) * 2011-05-31 2017-03-08 古河電気工業株式会社 Oxide superconducting thin film and superconducting fault current limiter
RU2481673C1 (en) * 2011-10-27 2013-05-10 Закрытое акционерное общество "СуперОкс" Method to manufacture thin-film high-temperature superconductive material
WO2015039142A1 (en) * 2013-09-13 2015-03-19 Mt Systems, Inc. Sapphire thinning and smoothing using high temperature wet process

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01133305A (en) * 1987-11-18 1989-05-25 Matsushita Electric Ind Co Ltd Superconducting passive element
EP0584410A1 (en) * 1991-07-05 1994-03-02 Conductus, Inc. Superconducting electronic structures and methods of preparing same
US5439877A (en) * 1990-12-07 1995-08-08 E. I. Du Pont De Nemours And Company Process for depositing high temperature superconducting oxide thin films

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6017926A (en) * 1983-07-08 1985-01-29 Matsushita Electronics Corp Crystal defect detecting method of sapphire
JPS6489481A (en) * 1987-09-30 1989-04-03 Fujitsu Ltd Manufacture of superconducting thin-film
CA2084264C (en) * 1991-12-02 1996-11-26 Takao Nakamura Josephson junction device formed of oxide superconductor material and process for preparing the same
US5527766A (en) * 1993-12-13 1996-06-18 Superconductor Technologies, Inc. Method for epitaxial lift-off for oxide films utilizing superconductor release layers
JP3015261B2 (en) * 1994-09-12 2000-03-06 科学技術振興事業団 Heat treatment method of sapphire single crystal substrate to improve surface characteristics

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01133305A (en) * 1987-11-18 1989-05-25 Matsushita Electric Ind Co Ltd Superconducting passive element
US5439877A (en) * 1990-12-07 1995-08-08 E. I. Du Pont De Nemours And Company Process for depositing high temperature superconducting oxide thin films
EP0584410A1 (en) * 1991-07-05 1994-03-02 Conductus, Inc. Superconducting electronic structures and methods of preparing same

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN *

Also Published As

Publication number Publication date
WO2001005726A2 (en) 2001-01-25
KR100338250B1 (en) 2002-05-27
KR20010010241A (en) 2001-02-05

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