WO2000077861A1 - Stacked wavelength-selective opto-electronic device - Google Patents
Stacked wavelength-selective opto-electronic device Download PDFInfo
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- WO2000077861A1 WO2000077861A1 PCT/EP2000/005590 EP0005590W WO0077861A1 WO 2000077861 A1 WO2000077861 A1 WO 2000077861A1 EP 0005590 W EP0005590 W EP 0005590W WO 0077861 A1 WO0077861 A1 WO 0077861A1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14645—Colour imagers
- H01L27/14647—Multicolour imagers having a stacked pixel-element structure, e.g. npn, npnpn or MQW elements
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035236—Superlattices; Multiple quantum well structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/11—Devices sensitive to infrared, visible or ultraviolet radiation characterised by two potential barriers or surface barriers, e.g. bipolar phototransistor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
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- H01L27/14625—Optical elements or arrangements associated with the device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic System
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/08—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Abstract
Description
Claims
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AU54054/00A AU5405400A (en) | 1999-06-14 | 2000-06-13 | Stacked wavelength-selective opto-electronic device |
JP2001504018A JP2003502847A (en) | 1999-06-14 | 2000-06-13 | Stackable wavelength selective optoelectronic device |
EP00938797A EP1228537A1 (en) | 1999-06-14 | 2000-06-13 | Stacked wavelength-selective opto-electronic device |
US10/023,430 US6891869B2 (en) | 1999-06-14 | 2001-12-14 | Wavelength-selective photonics device |
US11/005,842 US7442953B2 (en) | 1999-06-14 | 2004-12-07 | Wavelength selective photonics device |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14067199P | 1999-06-14 | 1999-06-14 | |
US60/140,671 | 1999-06-14 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/023,430 Continuation-In-Part US6891869B2 (en) | 1999-06-14 | 2001-12-14 | Wavelength-selective photonics device |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2000077861A1 true WO2000077861A1 (en) | 2000-12-21 |
Family
ID=22492296
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/EP2000/005590 WO2000077861A1 (en) | 1999-06-14 | 2000-06-13 | Stacked wavelength-selective opto-electronic device |
Country Status (5)
Country | Link |
---|---|
US (1) | US6891869B2 (en) |
EP (1) | EP1228537A1 (en) |
JP (1) | JP2003502847A (en) |
AU (1) | AU5405400A (en) |
WO (1) | WO2000077861A1 (en) |
Cited By (16)
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EP1265198A2 (en) * | 2001-06-08 | 2002-12-11 | Giesecke & Devrient GmbH | Device and method for investigating documents |
WO2005073485A2 (en) * | 2004-01-29 | 2005-08-11 | Rwe Space Solar Power Gmbh | Semiconductor structure comprising active zones |
WO2005098956A1 (en) * | 2004-04-12 | 2005-10-20 | Nanyang Technological University | Method and device for wavelength-sensitive photo-sensing using multiple pn-junction |
WO2006044983A2 (en) * | 2004-10-20 | 2006-04-27 | Massachusetts Institute Of Technology | Multi-spectral pixel and focal plane array |
WO2007030330A2 (en) * | 2005-09-06 | 2007-03-15 | Lucent Technologies Inc. | Semiconductor light source based on a combination of silicon and calcium fluoride |
JP2008066402A (en) * | 2006-09-05 | 2008-03-21 | Fujifilm Corp | Imaging device and imaging apparatus |
US7411232B2 (en) | 2004-07-16 | 2008-08-12 | Matsushita Electric Industrial Co., Ltd. | Semiconductor photodetecting device and method of manufacturing the same |
US7548302B2 (en) | 2005-03-29 | 2009-06-16 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
WO2009090123A2 (en) * | 2008-01-14 | 2009-07-23 | International Business Machines Corporation | Using 3d integrated diffractive gratings in solar cells |
EP2089910A1 (en) * | 2006-12-06 | 2009-08-19 | Solexant Corporation | Nanophotovoltaic device with improved quantum efficiency |
US7671341B2 (en) | 2005-12-14 | 2010-03-02 | Selex Sensors And Airborne Systems Limited | Multi colour photon detectors |
US7751655B2 (en) | 2007-07-27 | 2010-07-06 | Hewlett-Packard Development Company, L.P. | Micro-ring optical detector/modulator |
EP1643565A3 (en) * | 2004-09-30 | 2010-09-22 | OSRAM Opto Semiconductors GmbH | Radiation detector |
WO2010110888A1 (en) * | 2009-03-23 | 2010-09-30 | The Board Of Trustees Of The Leland Stanford Junior University | Quantum confinement solar cell fabriacated by atomic layer deposition |
CN102543972A (en) * | 2010-12-06 | 2012-07-04 | 三星康宁精密素材株式会社 | Solar battery module |
US8330090B2 (en) | 2007-05-07 | 2012-12-11 | Nxp, B.V. | Photosensitive device and method of manufacturing a photosensitive device using nanowire diodes |
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JP2001135893A (en) * | 1999-11-05 | 2001-05-18 | Fujitsu Ltd | Optical semiconductor device and photoelectron integrated circuit device |
DE10143956A1 (en) * | 2001-09-07 | 2003-04-03 | Fraunhofer Ges Forschung | Quantum Cascade Lasers |
WO2003062882A2 (en) * | 2002-01-22 | 2003-07-31 | University Of Delaware | Electro-optical switching using coupled photonic crystal waveguides |
US6841816B2 (en) * | 2002-03-20 | 2005-01-11 | Foveon, Inc. | Vertical color filter sensor group with non-sensor filter and method for fabricating such a sensor group |
US7535041B2 (en) * | 2003-06-26 | 2009-05-19 | Mears Technologies, Inc. | Method for making a semiconductor device including regions of band-engineered semiconductor superlattice to reduce device-on resistance |
US7531829B2 (en) * | 2003-06-26 | 2009-05-12 | Mears Technologies, Inc. | Semiconductor device including regions of band-engineered semiconductor superlattice to reduce device-on resistance |
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Also Published As
Publication number | Publication date |
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AU5405400A (en) | 2001-01-02 |
US20020101895A1 (en) | 2002-08-01 |
US6891869B2 (en) | 2005-05-10 |
JP2003502847A (en) | 2003-01-21 |
EP1228537A1 (en) | 2002-08-07 |
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