WO2000075947A1 - Relais electromecanique assiste a la commutation par semi-conducteur - Google Patents
Relais electromecanique assiste a la commutation par semi-conducteur Download PDFInfo
- Publication number
- WO2000075947A1 WO2000075947A1 PCT/FR2000/001378 FR0001378W WO0075947A1 WO 2000075947 A1 WO2000075947 A1 WO 2000075947A1 FR 0001378 W FR0001378 W FR 0001378W WO 0075947 A1 WO0075947 A1 WO 0075947A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- contact
- transistor
- current
- voltage
- signal
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H9/00—Details of switching devices, not covered by groups H01H1/00 - H01H7/00
- H01H9/54—Circuit arrangements not adapted to a particular application of the switching device and for which no provision exists elsewhere
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H9/00—Details of switching devices, not covered by groups H01H1/00 - H01H7/00
- H01H9/54—Circuit arrangements not adapted to a particular application of the switching device and for which no provision exists elsewhere
- H01H9/541—Contacts shunted by semiconductor devices
- H01H9/542—Contacts shunted by static switch means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H9/00—Details of switching devices, not covered by groups H01H1/00 - H01H7/00
- H01H9/54—Circuit arrangements not adapted to a particular application of the switching device and for which no provision exists elsewhere
- H01H9/541—Contacts shunted by semiconductor devices
- H01H9/542—Contacts shunted by static switch means
- H01H2009/544—Contacts shunted by static switch means the static switching means being an insulated gate bipolar transistor, e.g. IGBT, Darlington configuration of FET and bipolar transistor
Definitions
- the invention relates to an electromechanical relay assisted by semiconductor switching.
- the relay intended for switching loads on an electrical network can be used for this purpose either on an alternating current electrical network or on a direct current network.
- Electromechanical type relays comprise one or more electrical contacts with mechanical displacement coupled to a mobile element of the magnetic circuit of an electromagnet.
- the electromagnet is controlled by supplying its coil which, by producing an induction flux in the magnetic circuit, causes the moving element to move and the electrical contacts of the relay to close or open.
- the electrical contact usually comprises a fixed part and a mobile part each having studs made of a material which is a good electrical and thermal conductor. These pads, brought into contact when the relay closes, must have a low contact resistance in order to limit overheating during the passage of current.
- the contact cuts the current flowing through the electrical circuit, which again produces arcs between the contacts, the greater the intensity of the current to be cut and the more the circuit is inductive.
- These repeated opening and closing of the contact may produce repeated priming and deactivation of the triac or thyristors connected in parallel on the electrical contact and of repeated arcs between the contacts, the intensity of which will depend on the level of the current in the electrical circuit and on its sound. impedance.
- These arcs may be of very high level in the case of switching a circuit comprising inductive or capacitive loads.
- the phenomenon is as follows (we will describe the phenomenon in the case of a triac knowing that the same phenomenon occurs for thyristors in head to tail parallel): when the relay is closed, the triac is switched on conduction by the control circuit a little before the contact closes in order to pass the electric current through the triac.
- the triac in parallel on the contact defuses, the voltage across its terminals being substantially zero; the triac is in an isolated state. All the electric current flows at this instant in the closed electrical contact.
- a first contact bounce occurs causing the opening of the latter traversed by all of the current in the electrical circuit and the appearance of a switching arc.
- the voltage of the electrical circuit reappears at the terminals of the triac controlled, the latter reboots again causing the current of the electrical circuit to pass through the triac.
- the contact closing again, at the end of the first rebound defuses the triac which once again becomes insulating causing the passage of electric current in the contact.
- the triac When the relay is opened, the triac is ordered just before the contact opens. The triac being short-circuited by contact. The voltage across its terminals is substantially zero and it remains defused. The contact is opened with the nominal current in the contact, which disappears very quickly when the voltage across the triac becomes sufficient to start it. However, an arc occurs for a very short time upon opening. A rebound producing, in a similar way to what occurs at closing, repeating arcs.
- the invention provides an electromechanical relay intended to be inserted in an electrical circuit, the relay comprising an electrical contact with mechanical displacement, a transistor in parallel on the electrical contact, means for controlling on the one hand, the closing of the contact and the switching on of the transistor in response to a first control signal, and on the other hand the opening of the contact and the switching on of the transistor in response to a second control signal, characterized in that the control means include means for: generating from the first control signal a signal for closing the contact with mechanical displacement preceding the closing of this contact, this closing being effected for a voltage V across the terminals of the contact corresponding to the passing direction of the transistor; - Generate from the first control signal independently of the closing signal, a first transistor conduction signal starting before the contact is closed and ending after this closure;
- the transistor is constantly polarized in the passing direction so that during a closing command or an opening command of the relay the conduction of the transistor takes place a few moments before the contact closes or opens and the conduction stops a few moments after the contact closes or opens after the contact has rebounded.
- the first transistor conduction signal is generated when the voltage V corresponding to the passing direction of the transistor is close to the change in the direction of the alternation of the voltage V across its terminals;
- the second transistor conduction signal is generated when the current corresponding to the passing direction of the transistor is close to the change in direction of the alternation of current in the contact.
- the conduction of the transistor during a closing of the contact for a voltage in the passing directions of the transistor close to the change of alternation of voltage, that is to say a low voltage compared to the maximum network voltage, allows the size of the transistor to be undersized. Indeed the current passing through the transistor during this short period of conduction of the transistor (compared to the period of the alternating voltage of the network) will be of low value, the voltage across the terminals of the network being at this moment close to the change of alternation and therefore of low value close to 0 volts.
- the transistor in parallel on the electrical contact can be chosen from the IGBT (bipolar transistor with insulated gate transistor), bipolar, MOS transistors.
- the transistor is in series with a diode for protection against reverse voltages at the terminals of the transistor.
- the protection diode allows the use of the transistor in networks whose voltage is higher than the reverse voltage supported by the transistor, this reverse voltage being supported by the diode.
- the relay according to the invention uses a microcontroller having, on the one hand, inputs receiving respectively the control commands of the relay, current information in the electrical circuit and voltage information across the terminals of the electric contact with mechanical displacement. and on the other hand, a control output providing the opening and closing control signals of the contact and a conduction output for the transistor.
- FIG. 1 shows a block diagram of a relay according to the invention operating in an alternating current network.
- Figures 3a, 3b, 3c, 3d, 3e show state diagrams of different elements of the relay during the opening command.
- Figure 1 shows a block diagram of a relay according to the invention inserted in an electrical circuit CE with alternating current and nominal voltage U at its supply terminals E1 and E2.
- the electrical circuit CE supplies a load 12 via an electrical contact 14 with mechanical displacement of the relay.
- the relay essentially comprises, a microcontroller 10 ensuring the closing and opening of the relay, the electrical contact 14 with mechanical displacement, a transistor 15 of IGBT type with N channel connected in series by its emitter E with the anode a protection diode 16, the transistor 15 diode 16 assembly in series being connected in parallel on the contact 14 actuated by a coil 17 of an electromagnet 18, a voltage detector 20 of the voltage across the contact 14.
- the microcontroller 10 further comprises a current detector 22 of the current I passing through the electric circuit CE and passing through the contact 14 of the relay.
- Two inputs 24 and 26 of the current detector 22 are connected to the two terminals 28 and 30 of a shunt 32 in series in the electric circuit CE, the shunt supplying at its terminals 28 and 30 a voltage ul proportional to the value of the current I in the electrical circuit.
- the microcontroller 10 includes a logic input 34 connected to a CD control input of the relay, a control output 36 supplying via an amplifier 38 the coil 17 of the electromagnet 18 and a conduction output 19 connected to the command G of the transistor 15 of the IGBT type.
- a current detection input 40 and a voltage detection input 42 of the microcontroller 10 are respectively connected to an output current information 44 of the current detector 22 and to a voltage information output 46 of the voltage detector 20.
- a first control signal corresponding to a low voltage Vc, applied through the control input CD of the relay, to the logic input 34 of the microcontroller, causes the electrical contact 14 of the relay to close.
- a second control signal corresponding to a voltage Vc in the high state, applied to the same control input CD of the relay causes the opening of the same contact.
- the potential at the conduction output 19 of the microcontroller 10 is in the low state (close to 0 volts).
- FIG. 2a represents the control voltage Vc, of logic level, as a function of time.
- FIG. 2b represents the voltage Dv at the voltage information output 46 of the voltage detector 20.
- the voltage Dv is in the form of slots whose rising and falling edges occur respectively at time tv1, tv2, tv3, tv4, tv5 tvn, corresponding to the changes of direction of the alternations of the voltage V across the terminals of contact 14, a rising edge corresponding to the transition from alternating negative voltage V to alternating positive voltage V and a falling edge reverses it.
- the contact 14 being open before the time t0, the voltage V across the contact is substantially equal to the voltage U of the electrical circuit.
- the relay being in the open state, it is desired to close it at time t0 by applying the second control signal to its CD input in the form of a logic level at the high state of the control voltage Vc.
- the voltage detector 20 provides the microcontroller with the alternation change information enabling it to determine the start of the positive alternations of the voltage U of the electrical network CE corresponding to the passing direction of the I channel transistor 15 of N channel type.
- the microcontroller controls the contact by anticipation so that the switching takes place in the alternation of the passing direction of the transistor 15.
- the microcontroller calculates, after the appearance of the first control signal of the relay at the instant tO, a first waiting time dTR1 to generate, at the conduction output 19 of the microcontroller, a first conduction signal producing the saturation of the transistor 15 at time te (high state in FIG. 2e) in the alternation of the passing direction of the transistor and at a time close to the change in alternation (tv4) of the voltage across the contact 14.
- the microcontroller 10 calculates a second waiting time dTC2 to generate a contact closing signal (high state at the control output 36) supplying via the amplifier 38 the coil 17 (FIG. 2c) of the contact control 14.
- the second waiting time dTC2 will be calculated in such a way that the contact is closed at time t2 a little after the saturation of the transistor 15.
- the duration of the first conduction start signal of the transistor will be adjusted by the microcontroller 10 so that the saturation time Dc1 of the transistor 15 after the contact 14 is closed is sufficient to suppress the possible effects of contact bounces as described above.
- the closing signal is represented in FIG. 2c by the passage, at time t1, of the logic output 36 of the microcontroller from the low state (0 in the figure) to the high state (1).
- the transition to state 1 of the logic output 36 causes the coil 17 of the electromagnet 18 of the relay to be supplied via the amplifier 38 and the closing of the electrical contact 14 after a delay on closing corresponding dT1 at the characteristic delay time of the electromechanical relay between its command at time t1 (the supply of the coil 17) and the closing of the electrical contact at a time t2 following.
- Vmax be the maximum voltage across the open contact 14 and V ⁇ the voltage across the same contact when it closes at time t2, transistor 15 being at this time t2 in the saturated (or conductive) state.
- V ⁇ will be the saturation voltage of transistor 15, ie of the order of 2.1 volts, of very low value compared to the maximum of the voltage Vmax across the contact.
- FIG. 3a represents the control voltage Vc of logic level as a function of time.
- FIG. 3b represents the voltage Di at the current information output 44 of the current detector 20.
- the voltage Di is in the form of slots whose rising and falling edges occur respectively at times ti1, ti2, ti3, ti4, ti5 tin, corresponding to the changes of direction of the alternations of current I in the electrical circuit, a front of rise corresponding to the passage from negative current alternation to positive current alternation and a falling edge reverses it.
- the relay being in the closed state, it is opened at time t10 by applying the first control signal to its CD input in the form of a logic level of the control voltage Vc in the low state. At this instant t10 the control voltage Vc goes from state 1
- the current detector 22 provides the microcontroller with the alternation change information enabling it to determine the start of positive alternations of current in the CE electrical network.
- the microcontroller controls the contact in advance so that the switching takes place in the alternation of the passing direction of the transistor 15.
- the microcontroller calculates, after the appearance of the first control signal from the relay to the instant t10, a third waiting time dTR3 to generate, at the conduction output 19 of the microcontroller, a second conduction signal (high state in FIG. 3e) producing the saturation of the transistor 15 in the alternation of the passing direction of the transistor and at a time ti5 close to the change in alternation of the current in the contact 14.
- the microcontroller 10 calculates a fourth waiting time dTC4 to generate a contact opening signal 14 (low state at the control output 36) interrupting via the amplifier 38 the supply of the control coil of the contact 14.
- the fourth waiting time dTC4 is calculated so that the contact is closed a little after the saturation of transistor 15.
- the duration of the second conduction signal of the transistor will be adjusted by the microcontroller 10 so that the saturation time Dc2 of the transistor 15 after the opening of the contact 14 is sufficient to eliminate the possible effects of contact bouncing. If the stop of the second conduction signal of the transistor 15 IGBT occurs a little after the passage through a current zero (at time ti-5), the transistor 15 will naturally open on passage through the current zero because blocking of the diode 16 connected in series, which avoids network disturbances.
- the closing signal is represented in FIG. 3c by the passage, at time t11, of the logic output 36 of the microcontroller from the high state (1 in the figure) to the low state (0).
- the passage to state 0 of the logic output 36 causes the supply of the coil 17 of the electromagnet 18 of the relay to be interrupted and the electrical contact 14 to close after a closing delay dT2 corresponding to the characteristic delay time of the electromechanical relay between its command at time t1 (interruption of the supply to the coil 17) and the opening of the electrical contact at a time t12 following.
- Imax be the maximum current in contact 14 closed, current in the same contact when it opens at time t12 will disappear very quickly passing in the saturated transistor not producing an electric arc at the opening of the contact.
- the relay according to the invention has advantages over the relays of the prior art, among which there may be mentioned: an improvement in the life of the contacts close to the mechanical life;
- the transistor and the diode used may be smaller due to the short time of use during the switching;
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Abstract
Description
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Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AU47656/00A AU4765600A (en) | 1999-06-08 | 2000-05-19 | Semiconductor switch-assisted electromechanical relay |
EP00929646A EP1103058A1 (fr) | 1999-06-08 | 2000-05-19 | Relais electromecanique assiste a la commutation par semi-conducteur |
US09/762,299 US6643112B1 (en) | 1999-06-08 | 2000-05-19 | Semiconductor switch-assisted electromechanical relay |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9907218A FR2794890B1 (fr) | 1999-06-08 | 1999-06-08 | Relais electromecanique assiste a la commutation par semi-conducteur |
FR99/07218 | 1999-06-08 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2000075947A1 true WO2000075947A1 (fr) | 2000-12-14 |
Family
ID=9546518
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/FR2000/001378 WO2000075947A1 (fr) | 1999-06-08 | 2000-05-19 | Relais electromecanique assiste a la commutation par semi-conducteur |
Country Status (5)
Country | Link |
---|---|
US (1) | US6643112B1 (fr) |
EP (1) | EP1103058A1 (fr) |
AU (1) | AU4765600A (fr) |
FR (1) | FR2794890B1 (fr) |
WO (1) | WO2000075947A1 (fr) |
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Also Published As
Publication number | Publication date |
---|---|
FR2794890B1 (fr) | 2001-08-10 |
US6643112B1 (en) | 2003-11-04 |
FR2794890A1 (fr) | 2000-12-15 |
EP1103058A1 (fr) | 2001-05-30 |
AU4765600A (en) | 2000-12-28 |
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