WO2000070638A1 - Procede et dispositif pour extraire des electrons dans le vide et cathodes d'emission pour un tel dispositif - Google Patents
Procede et dispositif pour extraire des electrons dans le vide et cathodes d'emission pour un tel dispositif Download PDFInfo
- Publication number
- WO2000070638A1 WO2000070638A1 PCT/FR2000/001297 FR0001297W WO0070638A1 WO 2000070638 A1 WO2000070638 A1 WO 2000070638A1 FR 0001297 W FR0001297 W FR 0001297W WO 0070638 A1 WO0070638 A1 WO 0070638A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- electrons
- semiconductor
- cathode
- emission
- potential barrier
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/30—Cold cathodes, e.g. field-emissive cathode
- H01J1/308—Semiconductor cathodes, e.g. cathodes with PN junction layers
Definitions
- the present invention relates to the field of electron emission in a vacuum, from a cathode in the general sense.
- the object of the invention thus relates to the field of electron sources in the general sense, adapted to be used in electronic devices or to allow, in particular, the production of flat screens.
- an electron extraction device comprises an emission cathode and an anode located at a distance from each other and between which there is a vacuum or an ultra-vacuum.
- the anode and the cathode are connected together using a polarization source making it possible to place them at a given relative potential.
- an electron extraction device comprising a cathode located in distance relation from an anode.
- the cathode consists of a semiconductor film defining an emission surface for the electrons and supported by an injection electrode.
- the emission surface includes a front electrode making it possible to ensure the polarization of the injection electrode, in order to determine the surface potential of the semiconductor film.
- the control of this bias voltage makes it possible to extract the electrons from the cathode and to regulate the emission of the flow of electrons towards the anode.
- the emission of the electrons is due to a thermionic phenomenon insofar as the electrons are excited by the energy supply coming from the electrons injected by the injection electrode.
- the geometry of this cathode requires the implementation of technical means whose practical realization is difficult.
- the object of the invention aims to satisfy this need by proposing a method making it possible to meet the various objectives set out above.
- the method provides a method for extracting in a vacuum electrons emitted from a cathode located in distance relation of an anode which is placed at a given potential with respect to the cathode, using a polarization source.
- the method consists: - in producing a cathode having at least one junction between a metal serving as an electron reservoir and an n-type semiconductor, having an emission surface for the electrons, having a height surface potential barrier of a few tenths of electron volts, and having a thickness between 1 and 20 nm defined by the value of the desired reduction in the surface potential barrier,
- the object of the invention also aims to propose a device for extracting in a vacuum electrons emitted from a cathode located at a distance from at least one anode placed at a given potential with respect to the cathode at the using a bias source.
- the device comprises:
- an emission cathode comprising at least one junction between a metal and an n-type semiconductor, having a height of surface potential barrier of a few tenths of electron volts, the n-type semiconductor, having a emission surface for electrons and having a thickness included between 1 and 20 nm, defined by the value of the desired reduction in the surface potential barrier,
- Another object of the invention is to offer a new electron emission cathode for a vacuum extraction device comprising: - a first part forming an electron reservoir and formed by at least one metal layer,
- a second part forming the conduction medium for the electrons injected into the metallic layer and formed by an n-type semiconductor defining with the metallic layer, a metal - semiconductor junction having a potential barrier height of a few tenths of a electron volts, the n-type semiconductor, having an emission surface for the electrons, and having a thickness between 1 and 20 nm defined by the value of the desired reduction in the surface potential barrier.
- Fig. 1 is a block diagram illustrating a device for extracting electrons in a vacuum, according to the invention.
- Fig. 2 is a diagram of the energy bands, when the metal is initially separated from the semiconductor, making it possible to explain the principle of the invention.
- Fig. 2bis is a diagram of the energy bands E (eV) of the cathode as a function of the position x taken in the cathode-anode direction.
- Figs. 3, 4 and 5 are schematic diagrams of the energy bands of the cathode obtained according to three characteristic phases of the method according to the invention.
- Fig. 6 is a curve illustrating the variation of the current obtained as a function of the application of the bias voltage.
- Fig. 7 is a diagram illustrating the evolution of the emission current obtained as a function of time, for different values of the bias voltage.
- Figs. 8, 9 and 10 illustrate different alternative embodiments of a flat cathode allowing the implementation of the method according to the invention.
- the object of the invention relates to a device 1 making it possible to extract electrons in a vacuum, comprising an emission cathode 2 located at a distance from at least one anode 3 which, in the example illustrated, constitutes a anode for receiving the electrons emitted by the cathode 2.
- the cathode 2 and the anode 3 define between them a volume 4 in which there is a vacuum (10 -4 to 10 "8 Torr) or the ultra-vacuum (10 " 8 at 10 "12 Torr).
- the extraction device 1 also includes a polarization source 5 making it possible to place the cathode 2 at a given potential relative to the anode 3.
- the extraction device 1 comprises an emission cathode 2 comprising a first part 7 forming an electron reservoir and consisting of at least one metal layer
- the emission cathode 2 comprises also a second part 8 forming a conduction medium for the injected electrons.
- the conduction medium 8 is formed by an n-type semiconductor, defining with the metal layer 7, an electronic junction 9 metal - semiconductor (Schottky).
- this Schottky junction 9 has a height of potential barrier of a few tenths of electron volts, that is to say between 0.05 and 1 eV and, preferably, of l 'order of 0, 1 eN.
- the characteristics of this Schottky junction impose the choice of the couple of adequate materials metal 7 and semiconductor 8 of type n.
- the semiconductor layer 8 can be either n-type SiC (silicon carbide) or n-type TiO (rutile), obtained by sputtering.
- the n-type semiconductor has an emission surface 11 for the electrons extracted in the vid 4.
- the semiconductor 8 has a thickness defined between the Schottky junction 9 and the surface d 'emission 11, between 1 and 20 nm. The value of this thickness is defined by the desired reduction value for the surface potential barrier.
- the thickness of the semiconductor 8 can be, for example, of the order of 5 nm for semiconductor layers of SiC (silicon carbide) of n type or of TiO 2 (titanium oxide or rutile) of type n on a metallic layer of platinum.
- the semiconductor 8 is of the n wide gap type, that is to say greater than or equal to 3 eN.
- Fig. 2 illustrates the energy bands of the metal layer 7 and of the semiconductor 8 with respect to the vacuum 4, when they are separated from one another.
- the metal layer 7 has a Fermi level E f and an output work ⁇ m between the Fermi level and the level No of the vacuum potential 4.
- the semiconductor 8 has a forbidden band of width E g , a band of level conduction E c , a Fermi level E f , as well as an electronic affinity ⁇ with respect to the level Vo of the vacuum potential 4.
- the Schottky junction between the metal layer 7 and the semiconductor 8 of type n there is an energy adjustment leading to the same Fermi level and of vacuum potential 4.
- the cathode 2 thus produced has a metallic layer 7 with a Fermi level E f and defining with the n-type semiconductor 8, a Schottky junction 9. At the surface 11 of the semiconductor 8, there is a surface potential barrier V p .
- the extraction device 1 allows, via the polarization source 5, the emission of electrons which takes place according to a series process in two stages.
- the first step represents the injection of electrons into the semiconductor 8 to form a space charge Q sufficient to lower the surface potential barrier V p of the semiconductor 8 to a value less than or equal to 1 eN relative to the Fermi level of the metal 7.
- This first step is followed by a second step which consists in reversibly regulating the emission of electrons to the anode 3 using the polarization source 5 creating a electric field F in the vacuum 4 making it possible to control the height of the surface potential barrier V p of the semiconductor 8.
- Fig. 2bis makes it possible to illustrate the process of emission of electrons according to two consecutive stages.
- the surface potential barrier V p of the semiconductor 8 is lowered to a value less than or equal to 1 eN relative to the Fermi E r level of the metal 7.
- the energy difference between the maximum value of the surface potential barrier of the semiconductor 8 and the Fermi level of the metal 7 is represented by ⁇ E.
- This lowering of the surface potential barrier of the semiconductor 8 (passage from the curve Co to the curve Ci) is due to the injection, via the polarization source 5, of the electrons through the junction 9 and to the creation of the space charge Q in the semiconductor 8.
- the lowering of the surface potential barrier of the semiconductor 8 is an increasing function of the space charge Q which is itself an inverse function of the thickness of the semiconductor 8.
- the emission of electrons to the anode 3 is regulated using the polarization source 5 which creates in the vacuum 4, a variable electric field F which makes it possible to modulate the potential barrier of surface V p .
- the surface potential barrier V p (curves Ci, C 2 , C 3 ) is lowered for increasingly high values for the value of the electric field F. It can thus be distinguished in step and 2 , three behaviors characteristics of the cathode by relation to the value of the electric field F created in vacuum using the polarization source 5, illustrated more particularly in FIGS. 3 to 5.
- Fig. 3 illustrates a first behavior of the anode 2 for which the voltage applied by the bias source 5 is less than a threshold value V s from which an electron current can be measured.
- V s a threshold value
- an electric field F is applied leading to a first lowering ai of the height of the surface potential barrier resulting from the band curvature due to the penetration of the electric field F and the creation of a space charge Q following the injection of the electrons of the metal 7 into the semiconductor 8.
- a reduction is also obtained a 2 of the height of the surface potential barrier of the semiconductor due to the effect Schottky.
- the presence of the electric field F also leads to a deformation of the barrier of the surface potential of the semiconductor 8.
- FIG. 1 illustrates a first behavior of the anode 2 for which the voltage applied by the bias source 5 is less than a threshold value V s from which an electron current can be measured.
- FIG. 6 shows in part A of the current curve I as a function of the potential V of the source 5, the current characteristic obtained according to this first operating phase.
- Fig. 4 illustrates a second characteristic behavior of the anode 2 for an applied bias voltage, greater than the threshold voltage V ".
- the electric field F thus created is such that the height of the surface potential barrier V p of the semiconductor 8 is substantially equal to the level of the states occupied by the electrons in the semiconductor.
- the lowering (ai + a 2 ) of the height of the surface potential barrier V p of the semiconductor is then sufficient to allow the exit by electrons.
- An emission surface 11 with low electronic affinity is thus obtained, resulting from the presence of the space charge Q and the penetration of the field. electric.
- the field emission current I which is illustrated by part B of the curve of FIG. 6, is governed by the Fowler Nordheim relation characteristic of the emission of electrons by tunnel effect.
- Fig. 5 illustrates a third characteristic behavior of the cathode when the bias voltage V is much higher than the threshold voltage Vs.
- the bias voltage V is such that the electric field created F is adapted so that the height of the potential barrier surface V p of the semiconductor 8 is less than the level of the states occupied by the electrons in the semiconductor 8. There is thus obtained an emission surface 11 with negative electronic affinity.
- the electron emission mechanism is a thermionic emission considering that the injection of electrons is obtained from the junction 9 metal - semiconductor.
- Part C of the curve in fig. 6 illustrates the shape of the current I as a function of the voltage V applied for this third behavior. It should be considered that the emission of current operating in thermionic regime, is not sensitive to small variations in the vacuum barrier due to adsorption. As shown more precisely in FIG. 7, the stability of the current increases with the increase in the bias voltage V because the injection of electrons is not affected by the modifications likely to appear in vacuum 4.
- the method according to the invention thus makes it possible to regulate the emission of the electron flow from the control of the height of the surface potential barrier V p of the semiconductor 8, which is directly linked to the value of the voltage. of polarization V.
- this second step it is possible to obtain an emission surface which does not emit electrons (fig. 3), having a weak electronic affinity (fig. 4) or negative (fig. 5).
- An advantage of the technique according to the invention is to present an injection interface which is a solid junction between a metal and a semiconductor.
- the injection of electrons is therefore protected from environmental influences, such as adsorption, desorption, ion bombardment, etc.
- the emission surface of the cathode after the first step eti is a surface with low or negative electronic affinity.
- the emission of electrons is practically insensitive to environmental influences, such as adsorption, desorption, ion bombardment, etc.
- the emission current is very sensitive to temperature so that provision may be made for controlling the temperature of the cathode in order to regulate the flow of the electron beam emitted.
- the emission surface is directly dependent on the distribution of the electric field on the emission surface 11 of the cathode. Also, the presence of protuberances or protrusions on the emission face 11 makes it possible to confine the emission of electrons at its protuberances. Of course, it can also be envisaged that the emission of electrons is carried out from a flat surface.
- Figs. 8 to 10 describe different embodiments of a cathode 2 for the implementation of the extraction process according to the invention.
- the cathode 2 can be produced using conventional planar micro-electronics manufacturing technologies.
- Fig. 8 describes a cathode 2 comprising a first part forming an electron reservoir and constituted by a metal layer 7 carried by a metallic substrate 13, semiconductor or insulator.
- the metal layer 7 is coated with a layer of an n-type semiconductor 8 making it possible to form the Schottky junction 9.
- the semiconductor layer 8, produced by conventional doping technologies in microelectronics, such as by ion implantation or by deposition, for example of the CND type, spraying, evaporation, vacuum or PND.
- the emission surface 11 is substantially planar.
- the semiconductor element 8 thus has an emission surface 11 having localized zones 14 for spatial confinement of the emission electrons at the end of its protrusions 14.
- Fig. 10 illustrates another alternative embodiment of a cathode 2 in accordance with the invention comprising a metal layer 7 deposited on an insulating substrate 13.
- the assembly thus formed is subjected to ion bombardment to allow the appearance of protuberances in the form of points 15 and forming an element 8 semi n type conductor.
- a metal-semiconductor junction 9 thus appears at the level of the protuberance crossing the metal layer 7.
- the electron extraction device finds numerous applications in the field of electronics, in particular for constituting a source for electronic components under vacuum or for producing flat screens.
- a first electron extraction electrode placed in proximity relation to the anode and letting the electron beams whose intensity is locally modulated for each pixel of the screen. These beams are recovered by a reception anode placed downstream of the extraction anode with respect to the emission cathode.
- the production of the substrate 13 carrying the metal layer 7 in a semiconductor material offers the possibility of integrating into the substrate, active electronic components to locally control the emission from electrons.
- the object of the invention finds another particularly advantageous application for the production of parallel and uniform electron beams for electronic projection lithography.
- the substrate 13 has a plane geometry. Such a geometry is particularly suitable for devices requiring a planar electron source (for example flat screens of dimensions up to m 2 or more, electronic components of smaller dimensions of the order of mm 2 or several tens of cm 2 ).
- the substrate 13 can have other types of geometry depending on their application.
- the substrate 13 may have a geometry of the individual tip or individual pin head type for producing the cathodes in the individual electron guns. These guns are used in particular in electron microscopes or cathode ray tubes.
Landscapes
- Cold Cathode And The Manufacture (AREA)
- Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
- Electrodes For Cathode-Ray Tubes (AREA)
Abstract
Description
Claims
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AU45762/00A AU4576200A (en) | 1999-05-12 | 2000-05-12 | Method and device for extraction of electrodes in a vacuum and emission cathodesfor said device |
JP2000618998A JP2003500795A (ja) | 1999-05-12 | 2000-05-12 | 真空で電子を抽出する方法および装置並びに、このような装置のための放出カソード |
US09/926,489 US7057333B1 (en) | 1999-05-12 | 2000-05-12 | Method and device for extraction of electrons in a vacuum and emission cathodes for said device |
EP00927337A EP1177568A1 (fr) | 1999-05-12 | 2000-05-12 | Procede et dispositif pour extraire des electrons dans le vide et cathodes d'emission pour un tel dispositif |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR99/06254 | 1999-05-12 | ||
FR9906254A FR2793602B1 (fr) | 1999-05-12 | 1999-05-12 | Procede et dispositif pour extraire des electrons dans le vide et cathodes d'emission pour un tel dispositif |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2000070638A1 true WO2000070638A1 (fr) | 2000-11-23 |
Family
ID=9545682
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/FR2000/001297 WO2000070638A1 (fr) | 1999-05-12 | 2000-05-12 | Procede et dispositif pour extraire des electrons dans le vide et cathodes d'emission pour un tel dispositif |
Country Status (6)
Country | Link |
---|---|
US (1) | US7057333B1 (fr) |
EP (1) | EP1177568A1 (fr) |
JP (1) | JP2003500795A (fr) |
AU (1) | AU4576200A (fr) |
FR (1) | FR2793602B1 (fr) |
WO (1) | WO2000070638A1 (fr) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1328002A1 (fr) * | 2002-01-09 | 2003-07-16 | Hewlett-Packard Company | Dispositif émetteur d'électrons pour applications dans le stockage de données |
US6914374B2 (en) | 2002-01-09 | 2005-07-05 | Hewlett-Packard Development Company, L.P. | Planar electron emitter apparatus with improved emission area and method of manufacture |
US7259520B2 (en) | 2003-06-11 | 2007-08-21 | Canon Kabushiki Kaisha | Electron emission device, electron source, and image display having dipole layer |
US7583016B2 (en) | 2004-12-10 | 2009-09-01 | Canon Kabushiki Kaisha | Producing method for electron-emitting device and electron source, and image display apparatus utilizing producing method for electron-emitting device |
US7811625B2 (en) | 2002-06-13 | 2010-10-12 | Canon Kabushiki Kaisha | Method for manufacturing electron-emitting device |
Families Citing this family (7)
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---|---|---|---|---|
US6833556B2 (en) | 2002-08-12 | 2004-12-21 | Acorn Technologies, Inc. | Insulated gate field effect transistor having passivated schottky barriers to the channel |
US7084423B2 (en) | 2002-08-12 | 2006-08-01 | Acorn Technologies, Inc. | Method for depinning the Fermi level of a semiconductor at an electrical junction and devices incorporating such junctions |
US9620611B1 (en) | 2016-06-17 | 2017-04-11 | Acorn Technology, Inc. | MIS contact structure with metal oxide conductor |
RU2647487C1 (ru) * | 2016-09-21 | 2018-03-16 | Общество С Ограниченной Ответственностью "Твинн" | Электронная отпаянная пушка для вывода электронного потока из вакуумной области пушки в атмосферу или иную газовую среду |
RU2647489C1 (ru) * | 2016-10-20 | 2018-03-16 | Общество С Ограниченной Ответственностью "Твинн" | Электронная отпаянная пушка для вывода электронного потока и рентгеновского излучения из вакуумной области в атмосферу |
US10170627B2 (en) | 2016-11-18 | 2019-01-01 | Acorn Technologies, Inc. | Nanowire transistor with source and drain induced by electrical contacts with negative schottky barrier height |
EP3940740A1 (fr) * | 2020-07-16 | 2022-01-19 | ASML Netherlands B.V. | Émetteur destiné à émettre des particules chargées |
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- 1999-05-12 FR FR9906254A patent/FR2793602B1/fr not_active Expired - Fee Related
-
2000
- 2000-05-12 AU AU45762/00A patent/AU4576200A/en not_active Abandoned
- 2000-05-12 WO PCT/FR2000/001297 patent/WO2000070638A1/fr not_active Application Discontinuation
- 2000-05-12 US US09/926,489 patent/US7057333B1/en not_active Expired - Fee Related
- 2000-05-12 EP EP00927337A patent/EP1177568A1/fr not_active Withdrawn
- 2000-05-12 JP JP2000618998A patent/JP2003500795A/ja active Pending
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JPH087746A (ja) * | 1994-06-24 | 1996-01-12 | Fujitsu Ltd | 電界放出陰極装置及びその製造方法 |
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Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1328002A1 (fr) * | 2002-01-09 | 2003-07-16 | Hewlett-Packard Company | Dispositif émetteur d'électrons pour applications dans le stockage de données |
US6806630B2 (en) | 2002-01-09 | 2004-10-19 | Hewlett-Packard Development Company, L.P. | Electron emitter device for data storage applications and method of manufacture |
US6914374B2 (en) | 2002-01-09 | 2005-07-05 | Hewlett-Packard Development Company, L.P. | Planar electron emitter apparatus with improved emission area and method of manufacture |
CN100414624C (zh) * | 2002-01-09 | 2008-08-27 | 惠普公司 | 用于数据存储应用的改进的电子发射器件及其制造方法 |
US7811625B2 (en) | 2002-06-13 | 2010-10-12 | Canon Kabushiki Kaisha | Method for manufacturing electron-emitting device |
US7259520B2 (en) | 2003-06-11 | 2007-08-21 | Canon Kabushiki Kaisha | Electron emission device, electron source, and image display having dipole layer |
US7682213B2 (en) | 2003-06-11 | 2010-03-23 | Canon Kabushiki Kaisha | Method of manufacturing an electron emitting device by terminating a surface of a carbon film with hydrogen |
US7583016B2 (en) | 2004-12-10 | 2009-09-01 | Canon Kabushiki Kaisha | Producing method for electron-emitting device and electron source, and image display apparatus utilizing producing method for electron-emitting device |
Also Published As
Publication number | Publication date |
---|---|
JP2003500795A (ja) | 2003-01-07 |
FR2793602A1 (fr) | 2000-11-17 |
EP1177568A1 (fr) | 2002-02-06 |
AU4576200A (en) | 2000-12-05 |
FR2793602B1 (fr) | 2001-08-03 |
US7057333B1 (en) | 2006-06-06 |
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