WO2000057492A1 - Luminescent diode device - Google Patents
Luminescent diode device Download PDFInfo
- Publication number
- WO2000057492A1 WO2000057492A1 PCT/RU1999/000388 RU9900388W WO0057492A1 WO 2000057492 A1 WO2000057492 A1 WO 2000057492A1 RU 9900388 W RU9900388 W RU 9900388W WO 0057492 A1 WO0057492 A1 WO 0057492A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- luminescent diode
- lens
- diode device
- crystals
- crystal
- Prior art date
Links
- 239000013078 crystal Substances 0.000 claims abstract description 32
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 230000003287 optical effect Effects 0.000 claims abstract description 5
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 238000007789 sealing Methods 0.000 description 4
- 239000003086 colorant Substances 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000010276 construction Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000004033 plastic Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229920004142 LEXAN™ Polymers 0.000 description 1
- 239000004418 Lexan Substances 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000009851 ferrous metallurgy Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 239000005300 metallic glass Substances 0.000 description 1
- XITQUSLLOSKDTB-UHFFFAOYSA-N nitrofen Chemical compound C1=CC([N+](=O)[O-])=CC=C1OC1=CC=C(Cl)C=C1Cl XITQUSLLOSKDTB-UHFFFAOYSA-N 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000011664 signaling Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
Definitions
- the invention relates to the field of electronic engineering, namely to semiconducting devices containing several elements executed on the common substrate, specifically to luminescent diodes and can find its application in the semi-conductor industry in development and manufacture of the luminescent diode devices used in power engineering, railway traffic, ferrous metallurgy, chemical industry, heavy and other industries.
- luminescent diodes instead of incandescent lamps considerably increases the reliability and reduces the power consumption of equipment. As this takes place, in many cases required are the luminescent diodes with a wide range of colours and shades of light flow, varying in size and uniformity of luminous spot and in emissive power (luminous intensity).
- the most important parameter of luminescent diodes is the emissive power depending mostly on the strength of flowing forward electrical current and on the value of thermal resistance of the holder on which a crystal of light emitter is installed.
- the technical result of the offered invention is increasing of emissive power (luminous intensity) of the luminescent diode with possibility of varying of an angle of vision and of spatial diagram of emission directionality.
- the luminescent diode contains the crystals of light emitter placed in the recess of substrate having the light-reflecting side surface, and also a concentrating lens.
- the lens is executed in the form of a raster of annular and line elements, or combination thereof, plotted on the flat conical surface or on the surface of second sequence or on the combination thereof, meanwhile the angles of inclination of generatrixes towards the optical axis of lens are keeping within the limits of 0 ° up to +/- 90°.
- the ratio of diameter of each element of the lens raster structure to the distance from this element to the crystal is keeping within the limits of 0,2 up to 5.
- the ratio of the depth of substrate recess to the thickness of crystals is (2 - 4): 1.
- Each crystal is located in a mounting seat the value of diameter whichof does not exceed the size of diagonal of the lower face of the corresponding crystal in more than one and a half times.
- the work of the luminescent diode device can be described as follows.
- the electrical voltage which ensures the flow of forward current through the crystal (1) of the light emitter (5) is supplied to the connecting outlets (6), the crystal (1) begins to emit light.
- the emission from the upper surface of the crystal (1) of light emitter and from its lateral faces after reflecting by the truncated conical surface (4) of the recess (2) falls on a layer of polymeric sealing compound (hermetic) (7) and after that, on the concentrating lens (5) forming the emission of required indicatriss.
- Described construction of the luminescent diode device ensures thermal resistance to be 170 ° C/W and increasing of the forward current, flowing through the luminescent diode, up to 80 mA without losses of linearity of lux-ampere characteristic. This makes possible to obtain luminous intensity more than 60 Cd at carbon temperature 3°.
- Table 1 Shown in Table 1 are properties/characteristics of bright semi-conductor luminescent diodes.
- the developed luminescent diode device can find its wide industrial application.
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Lenses (AREA)
Abstract
The invention falls within the realms of electronic engineering specifically of the luminescent diode devices and is intended for application in semi-conductor industries. The luminescent diode device contains crystals of light emitter located in a recess of a substrate having a reflecting side surface and also a concentrating lens. The lens is executed in the form of raster of annular and line elements or of the combination thereof, plotted on the flat conical surface or on the surface of second sequence or on the combination thereof. The angles of inclination of generatrixes to the optical axis of lens are keeping within the limits of 0 up to +/- 90.
Description
LUMINESCENT DIODE DEVICE.
The invention relates to the field of electronic engineering, namely to semiconducting devices containing several elements executed on the common substrate, specifically to luminescent diodes and can find its application in the semi-conductor industry in development and manufacture of the luminescent diode devices used in power engineering, railway traffic, ferrous metallurgy, chemical industry, heavy and other industries.
Luminescent diodes are widely used in signaling about the mode of operation of various devices, in full-coloured screens of public use of any format, in manufacture of such sources of information as information panels, traveling lines, traffic lights, additional signals of braking in automobiles, etc.
The use of luminescent diodes instead of incandescent lamps considerably increases the reliability and reduces the power consumption of equipment. As this takes place, in many cases required are the luminescent diodes with a wide range of colours and shades of light flow, varying in size and uniformity of luminous spot and in emissive power (luminous intensity).
The most important parameter of luminescent diodes is the emissive power depending mostly on the strength of flowing forward electrical current and on the value of thermal resistance of the holder on which a crystal of light emitter is installed.
If taking into consideration the technical essence, the closest one to the offered luminescent diode device is a device containing the crystals of light emitter placed in the recess of substrate which has a reflecting side surface and also a concentrating lens (International patent Application Ns PCT/RU97/00070, International Publication Ns WO98/42031 dated 24.09.98). The drawback of such device is the lack of concentration of emission directionality and low light intensity.
The technical result of the offered invention is increasing of emissive power (luminous intensity) of the luminescent diode with possibility of varying of an angle of vision and of spatial diagram of emission directionality.
The set task is solved through that the luminescent diode contains the crystals of light emitter placed in the recess of substrate having the light-reflecting side surface, and also a concentrating lens. The lens is executed in the form of a
raster of annular and line elements, or combination thereof, plotted on the flat conical surface or on the surface of second sequence or on the combination thereof, meanwhile the angles of inclination of generatrixes towards the optical axis of lens are keeping within the limits of 0 ° up to +/- 90°. The ratio of diameter of each element of the lens raster structure to the distance from this element to the crystal is keeping within the limits of 0,2 up to 5. The ratio of the depth of substrate recess to the thickness of crystals is (2 - 4): 1. Each crystal is located in a mounting seat the value of diameter whichof does not exceed the size of diagonal of the lower face of the corresponding crystal in more than one and a half times.
Schematically shown in Figure 1 is the offered luminescent diode device. Shown in Figure 2 is the view of the device from below. The luminescent diode device contains crystals (1) of light emitter installed in a recess (2) of the substrate (3) which has reflecting side surface (4). The device contains also a concentrating lens (5) which is executed in the form of a raster. The raster consists of annular and line elements, or combination thereof, plotted on the flat conical surface or on the surface of second sequence or on the combination thereof (5). The angles of inclination of generatrixes towards the optical axis of lens are keeping within the limits of 0 ° up to +/- 90°. The ratio of diameter of each element of the lens raster structure (5) to the distance from this element to the crystal (1) is keeping within the limits of 0,2 up to 5.
The ratio of the depth of recess (2) of substrate (3) to the thickness of crystals (1) is (2 - 4): 1. Each crystal is located in a mounting seat the value of diameter whichof does not exceed the size of diagonal of the lower face of the corresponding crystal (1) in more than one and a half times.
The work of the luminescent diode device can be described as follows. When the electrical voltage which ensures the flow of forward current through the crystal (1) of the light emitter (5) is supplied to the connecting outlets (6), the crystal (1) begins to emit light. The emission from the upper surface of the crystal (1) of light emitter and from its lateral faces after reflecting by the truncated conical surface (4) of the recess (2) falls on a layer of polymeric sealing compound
(hermetic) (7) and after that, on the concentrating lens (5) forming the emission of required indicatriss.
Depending on the required diagram of directionality of emission a corresponding configuration of lens is applied. Availability of polymeric sealing compound (hermetic) (7) and of the cylindrical base (8) of the lens (5) ensures reduction of emission intensity losses and also the required diagram of emission directionality. Furthermore, the polymeric sealing compound (hermetic) (7) ensures the protection of the crystals (1) of the light emitters from penetration of humidity. The depth of the flat mounting seat for crystals (1) of light emitters exceeds the thickness of the crystal but does not exceed four thicknesses of the crystals. The size of the mounting seat of the crystals (1) of light emitters exceeds the size of diagonal of its lower face (1 ,5-2 times) which finally makes possible to gather totally (to concentrate) the emission along the optical axis of the luminescent diode and ensures high dispersion of consumed power from the lower face of substrate.
The crystals (1) of light emitters with red, orange, yellow, green, blue and dark blue colours of luminescence may be used in monochromatic one-coloured version of the luminescent diode. The construction of concrete luminescent diode device made in accordance with the present invention contains a metallic-glass holder of steel 1 mm thick, with connected outlets 0,55 mm in diameter. Reflecting truncated conical surface has a depth of 0,6 mm, diameter on the substrate surface is equal to 2,4 mm, diameter of the flat bottom equipped with mounting seats for crystals is 1 ,5 mm. The cover is cast in plastic mass - polycarbonate of «Lexan» type. A sealing (polymeric) compound of 159-322 make is used.
Crystals emitting red light with wave 633 nm in length, green light with wave 525 nm in length and dark blue light with wave 470 nm in length served as crystals of light emitter. To install the crystals of light emitters and to coat the junctions of the conductors to isolated connecting outlets based on silver a current-transmitting glue of TOK-2 type was applied.
Described construction of the luminescent diode device ensures thermal resistance to be 170 ° C/W and increasing of the forward current, flowing through
the luminescent diode, up to 80 mA without losses of linearity of lux-ampere characteristic. This makes possible to obtain luminous intensity more than 60 Cd at carbon temperature 3°.
Shown below are the properties/characteristics of super-bright full-coloured luminescent diodes developed on the base of the present invention.
The said devices contain light emitter crystals (of red, green and dark blue colours) mounted in hermetic plastic corpse with a square base and plastic cover -
Examples of concrete execution of the offered luminescent diode device may be illustrated in Table 1 and Table 2.
Shown in Table 1 are properties/characteristics of bright semi-conductor luminescent diodes.
Table 1
Shown in Table 2 are maximum operating properties/characteristics and other properties of semi-conducting luminescent diodes.
20
As one can conduct from the present specification of invention and from concrete examples of construction thereof the developed luminescent diode device can find its wide industrial application.
Claims
1. The luminescent diode device containing crystals of light emitter located in a recess of a substrate having a light-reflecting side surface and also a concentrating lens, wherein the lens is executed in the form of raster of annular and line elements or of the combination thereof, plotted on the flat conical surface or on the surface of second sequence or on the combination thereof and as this takes place the angles of inclination of generatrixes to the optical axis of lens are keeping within the limits of 0° up to +/- 90°.
2. The luminescent diode device as defined in Claim 1, wherein the ratio of diameter of each element of the raster structure of lens to the distance from this element to the crystal is keeping within the limits of 0,2 up to 5.
3. The luminescent diode device as defined in Claim 1 , wherein the ratio of the substrate recess depth to the thickness of crystals is (2 - 4): 1.
4. The luminescent diode device as defined in Claim 1 , wherein each crystal is installed in a mounting seat, the diameter whichof does not exceed the size of diagonal of the lower face of the corresponding crystal in more than one and a half times.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| AU30847/00A AU3084700A (en) | 1999-10-18 | 1999-10-18 | Luminescent diode device |
| JP2000607283A JP2004535055A (en) | 1999-10-18 | 1999-10-18 | Luminescent diode device |
| PCT/RU1999/000388 WO2000057492A1 (en) | 1999-10-18 | 1999-10-18 | Luminescent diode device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/RU1999/000388 WO2000057492A1 (en) | 1999-10-18 | 1999-10-18 | Luminescent diode device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| WO2000057492A1 true WO2000057492A1 (en) | 2000-09-28 |
| WO2000057492B1 WO2000057492B1 (en) | 2001-01-04 |
Family
ID=20130406
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/RU1999/000388 WO2000057492A1 (en) | 1999-10-18 | 1999-10-18 | Luminescent diode device |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP2004535055A (en) |
| AU (1) | AU3084700A (en) |
| WO (1) | WO2000057492A1 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6832861B2 (en) | 2000-12-29 | 2004-12-21 | Diemount Gmbh | Coupling device for optically coupling an optical waveguide to an electro-optical element |
| CN106410021A (en) * | 2015-07-28 | 2017-02-15 | 潘宇翔 | High-concentration lens structure |
| CN106410013A (en) * | 2015-07-28 | 2017-02-15 | 潘宇翔 | light emitting device |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5528057A (en) * | 1993-05-28 | 1996-06-18 | Omron Corporation | Semiconductor luminous element with light reflection and focusing configuration |
| DE19535777A1 (en) * | 1995-09-26 | 1997-03-27 | Siemens Ag | Optoelectronic semiconductor component and method for producing it |
| RU2114492C1 (en) * | 1996-03-19 | 1998-06-27 | Владимир Семенович Абрамов | Light-emitting diode |
| RU2133068C1 (en) * | 1997-07-30 | 1999-07-10 | Абрамов Владимир Семенович | Light-emitting diode unit |
| RU2134000C1 (en) * | 1997-12-31 | 1999-07-27 | Абрамов Владимир Семенович | Light-emitting diode unit |
-
1999
- 1999-10-18 JP JP2000607283A patent/JP2004535055A/en active Pending
- 1999-10-18 AU AU30847/00A patent/AU3084700A/en not_active Abandoned
- 1999-10-18 WO PCT/RU1999/000388 patent/WO2000057492A1/en active Application Filing
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5528057A (en) * | 1993-05-28 | 1996-06-18 | Omron Corporation | Semiconductor luminous element with light reflection and focusing configuration |
| DE19535777A1 (en) * | 1995-09-26 | 1997-03-27 | Siemens Ag | Optoelectronic semiconductor component and method for producing it |
| RU2114492C1 (en) * | 1996-03-19 | 1998-06-27 | Владимир Семенович Абрамов | Light-emitting diode |
| RU2133068C1 (en) * | 1997-07-30 | 1999-07-10 | Абрамов Владимир Семенович | Light-emitting diode unit |
| RU2134000C1 (en) * | 1997-12-31 | 1999-07-27 | Абрамов Владимир Семенович | Light-emitting diode unit |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6832861B2 (en) | 2000-12-29 | 2004-12-21 | Diemount Gmbh | Coupling device for optically coupling an optical waveguide to an electro-optical element |
| CN106410021A (en) * | 2015-07-28 | 2017-02-15 | 潘宇翔 | High-concentration lens structure |
| CN106410013A (en) * | 2015-07-28 | 2017-02-15 | 潘宇翔 | light emitting device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2004535055A (en) | 2004-11-18 |
| WO2000057492B1 (en) | 2001-01-04 |
| AU3084700A (en) | 2000-10-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP0976589A1 (en) | Luminescent diode | |
| EP3662514B1 (en) | High density pixelated-led chips | |
| US11417635B2 (en) | High density pixelated-LED chips and chip array devices | |
| JP5469176B2 (en) | Lighting device, heat transfer structure, and heat transfer element | |
| US7025651B2 (en) | Light emitting diode, light emitting device using the same, and fabrication processes therefor | |
| Bando et al. | Development of high-bright and pure-white LED lamps | |
| JP5153783B2 (en) | Lighting device and lighting method | |
| US9247612B2 (en) | LED driving device and lighting device | |
| US20030168964A1 (en) | Nanowire light emitting device and display | |
| JP2002299698A (en) | Light-emitting device | |
| JP2011501466A (en) | Lighting device having one or more light emitters and method of making the same | |
| KR20120027338A (en) | Solid state lighting devices having remote luminescent material-containing element, and lighting methods | |
| KR20090048640A (en) | Lighting device and lighting method | |
| CA2005377A1 (en) | Blue light emitting diode formed in silicon carbide | |
| US11592155B2 (en) | Light-emitting devices, headlamps for vehicles, and vehicles including the same | |
| TW201007989A (en) | Light source with near field mixing | |
| US20150048759A1 (en) | Lighting device | |
| US11233183B2 (en) | Light-emitting diodes, light-emitting diode arrays and related devices | |
| JP4138261B2 (en) | Light source device | |
| RU2134000C1 (en) | Light-emitting diode unit | |
| RU2133068C1 (en) | Light-emitting diode unit | |
| WO2000057492A1 (en) | Luminescent diode device | |
| RU2267188C2 (en) | Light-emitting diode semiconductor device in casing for surface wiring | |
| RU2170995C1 (en) | Light-emitting diode device | |
| WO2001029904A1 (en) | Luminescent diode device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| AK | Designated states |
Kind code of ref document: A1 Designated state(s): AL AM AT AU AZ BA BB BG BR BY CA CH CN CU CZ DE DK EE ES FI GB GE GH GM HU ID IL IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MD MG MK MN MW MX NO NZ PL PT RO RU SD SE SG SI SK SL TJ TM TR TT UA UG US UZ VN YU ZW |
|
| AL | Designated countries for regional patents |
Kind code of ref document: A1 Designated state(s): GH GM KE LS MW SD SL SZ TZ UG ZW AM AZ BY KG KZ MD RU TJ TM AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE |
|
| 121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
| AK | Designated states |
Kind code of ref document: B1 Designated state(s): AL AM AT AU AZ BA BB BG BR BY CA CH CN CU CZ DE DK EE ES FI GB GE GH GM HU ID IL IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MD MG MK MN MW MX NO NZ PL PT RO RU SD SE SG SI SK SL TJ TM TR TT UA UG US UZ VN YU ZW |
|
| AL | Designated countries for regional patents |
Kind code of ref document: B1 Designated state(s): GH GM KE LS MW SD SL SZ TZ UG ZW AM AZ BY KG KZ MD RU TJ TM AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE |
|
| B | Later publication of amended claims | ||
| DFPE | Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101) | ||
| ENP | Entry into the national phase |
Ref country code: JP Ref document number: 2000 607283 Kind code of ref document: A Format of ref document f/p: F |
|
| REG | Reference to national code |
Ref country code: DE Ref legal event code: 8642 |
|
| 122 | Ep: pct application non-entry in european phase |