WO2000047784A2 - Procede de production de silicium metallique - Google Patents

Procede de production de silicium metallique Download PDF

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Publication number
WO2000047784A2
WO2000047784A2 PCT/RU2000/000039 RU0000039W WO0047784A2 WO 2000047784 A2 WO2000047784 A2 WO 2000047784A2 RU 0000039 W RU0000039 W RU 0000039W WO 0047784 A2 WO0047784 A2 WO 0047784A2
Authority
WO
WIPO (PCT)
Prior art keywords
silicon
silicon dioxide
temperature
reducer
carbon
Prior art date
Application number
PCT/RU2000/000039
Other languages
English (en)
Russian (ru)
Other versions
WO2000047784A3 (fr
Inventor
Evgeny Akimovich Bogachev
Ildar Mansurovich Abdjukhanov
Anatoly Nikolaevich Timofeev
Mansur Abdrakhmanovich Abdjukhanov
Original Assignee
Otkrytoe Aktsionernoe Obschestvo Nauchno-Poroizvodstvennoe Obiedinenie 'kompozit'
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Otkrytoe Aktsionernoe Obschestvo Nauchno-Poroizvodstvennoe Obiedinenie 'kompozit' filed Critical Otkrytoe Aktsionernoe Obschestvo Nauchno-Poroizvodstvennoe Obiedinenie 'kompozit'
Publication of WO2000047784A2 publication Critical patent/WO2000047784A2/fr
Publication of WO2000047784A3 publication Critical patent/WO2000047784A3/fr

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
    • C22B5/00—General methods of reducing to metals
    • C22B5/02—Dry methods smelting of sulfides or formation of mattes
    • C22B5/10—Dry methods smelting of sulfides or formation of mattes by solid carbonaceous reducing agents
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
    • C22B61/00—Obtaining metals not elsewhere provided for in this subclass

Definitions

  • the gas discharge 3 ⁇ 0 2 is blown into the heated up to 1300 ° C furnace with a gas carrier (aggeneration, hydrogen) is a gas
  • a gas carrier asggeneration, hydrogen
  • the carburizing process is dry.
  • the use of dispersed powder of dioxide makes it possible to increase the activity of the resulting bus for the restoration of ⁇ Yu 2 .
  • precipitated at the time of carburizing at a lower level of carbon particles are transferred to the carbide of the brown. Further, the mixture of ⁇ Yu 2 - ⁇ .
  • the dioxide of a mixture has a mixture of no more than 190 ° C and the temperature of the medium is non-corrosive.
  • thermodynamic force interaction is the process of phase transitions in the original crystalline range: above 1300 ° C, it is ⁇ -reactive. This transition is driven by a notable increase in volume.
  • catching with the residual skid for the flash voltages ⁇ and the formation of the metal sticks takes place: 1, 55 ⁇ + 1, 5 + 5, + 1, 55 + 1, + 1, 55 + 1, 1 + 5, + 1, 5 + 1, + 1, + 5, + 1, + 5, + 1, + 5, + 1, + 1, + 1, + 1, + 1,
  • the original material is taken up and distributed and intentionally with no more than the values indicated in the table.
  • the raw materials used were used as a starter with a particle size of 1-3 mm of the unit ( ⁇ )
  • the cultivated starter was obtained by grinding a black starter in a planter mill réelle ⁇ réelle ⁇ , a fully equipped agrarian unit.
  • the granular composition of the product was controlled by laser diffraction analysis “Analysis-22” ( ⁇ 1 $ s ⁇ ).
  • the mixture to be consumed was reduced to a high temperature in the carriage at a standstill (GSU 10157-79 as amended 1), at a constant temperature of 800 ° C, to a room temperature for 1, 5.
  • the territory of the Republic of Ukraine and the Czechoslovak Republic carried out the campaign with the help of a large-scale iron and steel mill.
  • the process of the process of receiving radiation from the region was brought into a vacuum process furnace of the United States type in a high-volume computer from a large group of companies
  • the preparation of the seed was carried out in two stages. In the first stage of the busbar, which is composed of dioxide and carbon dioxide, the busbar, which is composed of dioxide and brown carbide, is 1/2. The process was pressurized at a pressure of 0.01 Pa and a temperature of 1300 ° C for 10 hours. The final stage was made at pressure 0.01 - 0.1
  • Samples 2 are used to ignite and ignite the circuit board. Comparison of their mass flow with the mass circuit of the proposed method (Samples 1, 3 - 9) in
  • the temperature and temperature are lower than the temperature of 1400-1700 ° C and the temperature is lower.

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
  • Carbon And Carbon Compounds (AREA)

Abstract

Cette invention se rapporte au domaine de la métallurgie des métaux non ferreux, et concerne notamment un procédé carbo-thermique permettant de produire du silicium que l'on utilise dans l'industrie photo-électronique, notamment dans la production de panneaux solaires. Ce procédé permet d'améliorer le niveau d'interaction interphase entre le dioxyde de silicium et un réducteur carboné obtenu à partir d'un composé organique, et d'accroître ainsi la manufacturabilité, de réduire la quantité d'énergie utilisée lors du processus de réduction du SiO2, et d'accroître le rendement en produit fini. Cette invention a pour de produire du silicium qui peut être utilisé notamment dans des panneaux solaires, et concerne un procédé qui consiste à effectuer une réduction carbo-thermique de dioxyde de silicium en carbure de silicium à l'aide d'un réducteur organique, et faire réagir le carbure de silicium avec le dioxyde de silicium. On utilise en qualité de matériaux de départ du dioxyde de silicium ayant un niveau de pureté prédéterminé, tandis qu'on utilise en qualité de réducteur organique un réducteur contenant du carbone à base de résines phénoliques liquides ayant un niveau de pureté prédéterminé. Le processus de production de silicium proprement dit comprend trois méthodes de traitement thermique, ceci en partant de températures ambiantes allant jusqu'à 160° C à une pression de 0,1-0,7 MPa, jusqu'à 800° C dans un milieu inerte et jusqu'à 1700° C dans un gaz inerte. On atteint ensuite en deux étapes une température de 1300-1400° C à 0,01 Pa, puis une température de 1800° C à une pression variable de 0,01 Pa à 0,1 MPa. Le dioxyde de silicium possède un contenu en impuretés ne dépassant pas 190 ppm, tandis que le réducteur contenant du carbone et à base de résines phénoliques liquides possède un contenu en impuretés ne dépassant pas 80 ppm.
PCT/RU2000/000039 1999-02-11 2000-02-07 Procede de production de silicium metallique WO2000047784A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
RU99102710A RU2160705C2 (ru) 1999-02-11 1999-02-11 Способ получения металлического кремния
RU99102710 1999-02-11

Publications (2)

Publication Number Publication Date
WO2000047784A2 true WO2000047784A2 (fr) 2000-08-17
WO2000047784A3 WO2000047784A3 (fr) 2000-12-14

Family

ID=20215778

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/RU2000/000039 WO2000047784A2 (fr) 1999-02-11 2000-02-07 Procede de production de silicium metallique

Country Status (2)

Country Link
RU (1) RU2160705C2 (fr)
WO (1) WO2000047784A2 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004048621A1 (fr) * 2002-08-29 2004-06-10 Elkem Asa Procede de production de metaux et d'alliages a l'aide de carbone solide produit a partir de gaz contenant du carbone
CN102786054A (zh) * 2012-09-07 2012-11-21 昆明冶金研究院 一种还原熔炼微硅粉的方法

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2570153C1 (ru) * 2014-08-29 2015-12-10 Общество с ограниченной ответственностью "Объединенная Компания РУСАЛ Инженерно-технологический центр" Способ выплавки технического кремния
FR3145359A1 (fr) * 2023-01-27 2024-08-02 HPQ Silicium Inc. Appareil et procede de production de silicium par carboréduction

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2008559A (en) * 1977-09-09 1979-06-06 Goldblatt N Z Production of silicon
SU1080740A3 (ru) * 1980-06-21 1984-03-15 Интернешнл Минералс Энд Кэмикал Лаксембург Сосьетэ Аноним (Фирма) Способ получени частиц кремнезема с покрытием из углерода дл производства кремни или карбида кремни в электропечи
DE3439550A1 (de) * 1984-10-29 1986-04-30 Siemens Ag Verfahren zum herstellen von silizium fuer solarzellen
SU1494861A3 (ru) * 1983-11-26 1989-07-15 Интернэшнл Минерал Энд Кемикал Корпорейшн (Фирма) Способ получени кремни в низкошахтной электропечи

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2008559A (en) * 1977-09-09 1979-06-06 Goldblatt N Z Production of silicon
SU1080740A3 (ru) * 1980-06-21 1984-03-15 Интернешнл Минералс Энд Кэмикал Лаксембург Сосьетэ Аноним (Фирма) Способ получени частиц кремнезема с покрытием из углерода дл производства кремни или карбида кремни в электропечи
SU1494861A3 (ru) * 1983-11-26 1989-07-15 Интернэшнл Минерал Энд Кемикал Корпорейшн (Фирма) Способ получени кремни в низкошахтной электропечи
DE3439550A1 (de) * 1984-10-29 1986-04-30 Siemens Ag Verfahren zum herstellen von silizium fuer solarzellen

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004048621A1 (fr) * 2002-08-29 2004-06-10 Elkem Asa Procede de production de metaux et d'alliages a l'aide de carbone solide produit a partir de gaz contenant du carbone
EA008966B1 (ru) * 2002-08-29 2007-10-26 Элкем Аса Производство металлов и сплавов с использованием твердого углерода, полученного из углеродсодержащего газа
CN102786054A (zh) * 2012-09-07 2012-11-21 昆明冶金研究院 一种还原熔炼微硅粉的方法

Also Published As

Publication number Publication date
WO2000047784A3 (fr) 2000-12-14
RU2160705C2 (ru) 2000-12-20

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