WO2000043436A1 - Polycarbonate resin for formed article, method for production thereof and container/carrier for semiconductor product using the same - Google Patents

Polycarbonate resin for formed article, method for production thereof and container/carrier for semiconductor product using the same Download PDF

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Publication number
WO2000043436A1
WO2000043436A1 PCT/JP2000/000231 JP0000231W WO0043436A1 WO 2000043436 A1 WO2000043436 A1 WO 2000043436A1 JP 0000231 W JP0000231 W JP 0000231W WO 0043436 A1 WO0043436 A1 WO 0043436A1
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Prior art keywords
polycarbonate resin
eluted
resin
polycarbonate
weight
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PCT/JP2000/000231
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French (fr)
Japanese (ja)
Inventor
Shigeki Kuze
Kouichi Hara
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Idemitsu Petrochemical Co., Ltd.
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Publication of WO2000043436A1 publication Critical patent/WO2000043436A1/en

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    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G64/00Macromolecular compounds obtained by reactions forming a carbonic ester link in the main chain of the macromolecule
    • C08G64/04Aromatic polycarbonates
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G64/00Macromolecular compounds obtained by reactions forming a carbonic ester link in the main chain of the macromolecule
    • C08G64/40Post-polymerisation treatment

Definitions

  • the present invention relates to a molding polycarbonate resin, a method for producing the same, and a semiconductor product storage / transport tool using the same. More specifically, polycarbonate with a low content of volatiles, eluted chloride ions and sulfate ions, a production method for reducing the content of these impurities, and semiconductor products such as silicon wafers formed using the polycarbonate Or, it relates to a carrier that stores, cleans, dries, and transports disk products such as hard disks.
  • wafers are stored in cases (called “semiconductor product storage vehicles”) that store several tens of wafers. It is immersed in a washing tank containing ultrapure water, washed, taken out, dried, and moved and transported to the next circuit production process.
  • thermoplastic materials such as polypropylene and polycarbonate have been used for such carriers.However, in response to requests such as increasing the diameter of the wafer itself and increasing the number of sheets to be stored, stronger rigidity and higher resistance have been achieved.
  • Wafer surface contamination causes exfoliation and swelling of the photosensitive resin used in the subsequent circuit fabrication process, poor etching, etc., as well as partial variations in circuit resistance, circuit defects, and service life in the final product device. It is said to be a distant cause of the shortening of life. It is also said that hard disks have defects in storage layers and shorter lives.
  • the present invention relates to a molding polycarbonate resin which does not cause surface contamination of a silicon wafer or a hard disk, a method for producing the same, and a silicon resin molded using the molding polycarbonate resin.
  • the purpose is to provide storage and transportation tools for semiconductor products such as wafers or disk products such as hard disks.
  • the present inventors have intensively studied the above problems, and have used a storage and transport device made of polycarbonate resin in the washing and drying processes of semiconductor products such as silicon wafers or disk products such as hard disks.
  • the present inventors have investigated impurities that cause surface contamination of semiconductor products, and based on the findings, completed the present invention having the following contents.
  • a polycarbonate resin for molding that satisfies the following (1) to (3).
  • the weight of the volatile gas generated when the polycarbonate resin is heat-treated at 108 ° C for 30 minutes is 0.3 ppm or less
  • the weight of the sulfate ion eluted when the polycarbonate resin is eluted with pure water at 23 ° C for 1 minute is 50 ppb or less.
  • Polycarbonate powder is kneaded and extruded using a twin-screw extruder having a plurality of decompression vents, and the extruded strands have a chloride ion concentration and a sulfate ion concentration of 50 ppm by weight or less, respectively.
  • the first invention of the present invention is a low-impurity-containing polycarbonate represented by the following (1) to (3) ′.
  • the weight of the volatile gas generated when the polycarbonate resin is heat-treated at 108 ° C for 30 minutes is 0.3 ppm or less, preferably 0.2 ppm or less,
  • the weight of the eluted chloride ion is 50 ppb or less, preferably 40 ppb or less.
  • the weight of the sulfate ion eluted when the polycarbonate resin is eluted with pure water at 23 ° C for 1 minute is 50 ppb or less, preferably 40 ppb or less.
  • the amount of volatile gas from the molding polycarbonate resin is half. It is measured under typical conditions in the drying process of conductor products, and is the weight of volatile gas generated when a resin burette sample is heat-treated at a temperature of 108 for 30 minutes. It is specified by the measured value.
  • the sample was heated at a heating temperature of 108 ° C for 30 minutes while flowing a stream of hemi-gas, and the volatile components were adsorbed on the adsorbent Tenax-TA at 130 ° C, and then the adsorbed volatile components were removed. Desorb for 2 minutes at ° C and measure by gas chromatography.
  • the volatile gas is presumed to be, for example, methylene chloride derived from a solvent used for producing polycarbonate by the interfacial polymerization method, and also gas due to contamination at the time of pellet production.
  • the generated weight of the volatile gas was 0.4 to 0.5 ppm. If the generated weight of this volatile gas exceeds 0.3 ppm, it is difficult to avoid contamination of semiconductor products or disc products.
  • chlorine eluted from the polycarbonate resin for molding is used.
  • the amounts of sulfate and sulfate ions were measured under typical conditions in the washing process of semiconductor products, and a sample of resin pellets was purified using a Millipore ultrapure water production system Mi11iQ system. Using water (specific resistance: 18 ⁇ or more), measure the weight of the eluted chloride and sulfate ions by ion chromatography.
  • a resin bottle sample is put into a polypropylene sample bottle that has been thoroughly washed with pure water for measurement, then 25 milliliters of pure water at 23 ° C is added, and after sealing, at 23 ° C Elution was performed for 1 minute.
  • the eluted water was subjected to ion chromatography (IC700, manufactured by Yokogawa Electric Corporation) to measure the weight of chloride ions and the weight of sulfate ions.
  • the chlorine ions and the sulfate ions are mainly derived from dissolved substances in strand cooling water at the time of pellet production.
  • Polycarbonate with a small amount of impurities as described above is significant as a material with further improved quality as a material for molding semiconductor product storage and transportation tools.
  • a second invention of the present invention relates to a method for producing a molding polycarbonate resin having a low impurity content according to the above [1], and comprising a plurality of decompressing vents for polycarbonate powder.
  • a twin-screw extruder kneading, extruding, and extruding the strand are performed using cooling water having a chloride ion concentration and a sulfate ion concentration of 50 ppm by weight or less, respectively. Is achieved. That is, it is effective to use a twin-screw extruder with two or more decompression vents as a pellet granulator as a method for reducing the volatile gas described in (1) of [1] above.
  • three or more decompression vents are provided.
  • Volatile gas separated in the kneader is removed from the decompression vent, but a decompression vent is provided at the center of the kneader and at the exit of the kneader near the die, and a third and fourth decompression vent is appropriately arranged. It is preferable to use a type that has a good mixer and has a twin-screw kneader because it has a large degassing effect of volatile gas.
  • the molding conditions of such a twin-screw kneader with a multi-vacuum vent differ depending on the properties of the raw material polycarbonate powder to be charged.For example, with a twin-screw kneader having a diameter of 7 mm ⁇ , the It is performed at 350 ° C and an extrusion speed of 250 kg hours. Further, if necessary, the amount of volatile gas can be reduced by once passing the raw material polycarbonate pellets through the kneader again through the kneader.
  • pelletizers are usually installed in the final step of the polycarbonate manufacturing process, and various additives (antioxidants, weathering agents, etc.) are also added as appropriate during granulation.
  • additives antioxidants, weathering agents, etc.
  • the present applicant has proposed a technique for further promoting the reduction of volatile gas by adding water by using the addition mechanism or the like (Japanese Patent Publication No. 5-276647). It can also function effectively for the above problems.
  • the generated weight of volatile gas is 0.4 to 0.5 ppm, and according to the method of the present invention, 10 minutes is required. It can be reduced to 1 or less.
  • the elution chloride ion and sulfur described in (2) and (3) of [1] above is effective to limit the quality of the extruded strand cooling water. That is, the hot strand exiting the dice of the twin-screw kneader passes through a water tank filled with cooling water, is cooled, and is supplied to a strand cutter.
  • This cooling water is regarded as a source of contamination of the above-mentioned elution chloride ion and sulfate ion, and pure water is used so that the elution amount under each predetermined condition is 50 ppb or less.
  • the purity level of such cooling water may be such that each ion concentration is not more than 50 ppm by weight, preferably not more than 40 ppm by weight.
  • this limit value is very industrially significant because it generally causes cost increase.
  • it is preferable to use clean pellet storage bags for example, Elcon clean inner bags manufactured by Showa Pax Co., Ltd.).
  • the third invention of the present invention is a molded article application invention using the molding polycarbonate resin having a low impurity content of the above [1], and is used for storing silicon wafers and hard disks. It can be suitably used for a carrier.
  • a typical silicon wafer storage and transport tool for these semiconductor products usually has a structure in which 1 to 25 wafers each having a diameter of 150 to 30 Omm are arranged and stored with a gap therebetween.
  • test methods used in the examples are as follows.
  • the obtained pellet is placed on a hard disk and left at 60 ° C and 80% RH (room temperature and humidity) for 96 hours. Check the corners and corrosion status visually.
  • Example 1 in addition to the raw material polycarbonate, 3 kg of pure water was added immediately before the second vent of the extruder, and the cylinder temperature was 280 ° C, the extrusion speed was 250 kg hours, and water and polycarbonate were used. A pellet was prepared and evaluated in the same manner except that the contact time with the net was 2.0 seconds, and kneading and extrusion were performed while removing gas. The evaluation results are shown in Tables 1, 2 and 3.
  • Example 2 The pellet sample prepared in Example 2 was again applied to a kneader under the same conditions to prepare a pellet, and thereafter, the same evaluation was performed. Table 1 shows the evaluation results. The results are shown in Tables 2 and 3.
  • Example 1 a twin-screw extruder with a triple vent was replaced with a single-screw extruder with a single vent (TMG65, Nippon Placon Co., Ltd.), and a pellet was created in the same manner and evaluated.
  • TMG65 twin-screw extruder with a triple vent
  • TMG65 single-screw extruder with a single vent
  • Example 2 was repeated in the same manner as in Example 2 except that the quality of the strand cooling water was changed as shown in Table 2.
  • the evaluation results are shown in Tables 1, 2 and 3.
  • Example 2 Trif. Twin screw extruder with water + water addition 0.0 3 0
  • Example 3 The sanfu of Example 2. Knead again 0. 0 1 7
  • Example 1 the effect of reducing the amount of volatile matter by the method of the present invention is one digit lower than that of Comparative Example 1 of the conventional example. Compared with Example 1, the effect of adding water was confirmed in Example 2 in which water was added, and in Example 3, the effect of reduction by repetition was confirmed.
  • Polycarbonate resin for molding that does not cause surface contamination etc. of silicon wafers and hard disks, its manufacturing method, and semiconductor products such as silicon wafers and hard disks molded using the molding polycarbonate resin Provide a storage and transportation device for disk products.

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  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Processing And Handling Of Plastics And Other Materials For Molding In General (AREA)
  • Polyesters Or Polycarbonates (AREA)

Abstract

A polycarbonate resin having reduced contents of volatile matters, water-soluble chlorine-containing ion and sulfate ion which may be prepared by a process comprising kneading and extruding by means of a twin-screw extruder having a reduced pressure type vent and cooling the resultant extruded strand by use of a cooling water having a specified quality; and a container/carrier formed from the resin for a semiconductor product or a disk product. Also provided are a polycarbonate resin for a formed article, which does not cause a problem of staining of a surface or the like to a silicon wafer or a hard disk formed therefrom and a method for producing the resin; and a container/carrier formed from the polycarbonate resin for a semiconductor product such as a silicon wafer or a disk product such as a hard disk.

Description

明細書  Specification
成形用ポリカーボネー ト樹脂及びその製造方法とそれを用いた半導 体製品収納運搬具  Polycarbonate resin for molding, method for producing the same, and semiconductor product storage and transportation device using the same
技術分野 Technical field
本発明は、 成形用ポリ カーボネー ト樹脂及びその製造方法とそれを 用いた半導体製品収納運搬具に関するものである。 詳しく は、 揮発分、 溶出塩素イオン及び硫酸イオンの含有量が少ないポリカーボネー ト及 びそれら不純物含有量を低減する製造法、 更にはそのポリカーボネー トを用いて成形したシリ コン · ウェハー等半導体製品又はハ一ドディ スク等ディスク製品を収納し、 洗浄 · 乾燥 · 移送する運搬具に関する ものである。  TECHNICAL FIELD The present invention relates to a molding polycarbonate resin, a method for producing the same, and a semiconductor product storage / transport tool using the same. More specifically, polycarbonate with a low content of volatiles, eluted chloride ions and sulfate ions, a production method for reducing the content of these impurities, and semiconductor products such as silicon wafers formed using the polycarbonate Or, it relates to a carrier that stores, cleans, dries, and transports disk products such as hard disks.
背景技術 Background art
シリ コン ' ウェハ一等半導体製品の製造過程にウェハーの洗浄 ' 乾 燥工程があり、 通常、 ウェハーを数十枚単位で収納するケース ( 「半 導体製品収納運搬具」 という) に入れたまま、 超純水を貯水した洗浄 槽に浸漬して洗浄し、取り出し、乾燥させて次の回路制作工程に移動 · 運搬する。 このよ うな運搬具は、 従来からポリ プロ ピレンやポリカー ボネー ト といった熱可塑性樹脂が用いられてきたが、 ウェハー自体の 大口径化、 収納枚数の増大等の要請に応え、 よ り強い剛性、 耐衝撃性 を有し、 併せて、 一連の洗浄 · 乾燥工程でウェハーの表面汚染の原因 となる運搬具由来の揮発 ·溶出する物質を減少させる必要があった。 シリ コン ' ウェハ一等半導体製品と同様に、 ハー ドディスク等ディ スク製品も表面汚染の原因となる運搬具由来の揮発 ·溶出する物質を 減少させる必要があった。 そこで、 ポリエステル樹脂をその運搬具の材質に用いる提案がされ ている (特開平 9— 1 9 4 5 7 8号公報) が充分ではなく、 元来、 不 純物の少なく 高剛性 · 高耐衝撃性を有するポリカーボネー トに期待が 寄せられることとなった。 In the process of manufacturing semiconductor products such as silicon wafers, there is a process of cleaning and drying wafers. Usually, wafers are stored in cases (called “semiconductor product storage vehicles”) that store several tens of wafers. It is immersed in a washing tank containing ultrapure water, washed, taken out, dried, and moved and transported to the next circuit production process. Conventionally, thermoplastic materials such as polypropylene and polycarbonate have been used for such carriers.However, in response to requests such as increasing the diameter of the wafer itself and increasing the number of sheets to be stored, stronger rigidity and higher resistance have been achieved. In addition, it was necessary to reduce the amount of volatile and eluted substances originating from the transport equipment that cause surface contamination of wafers in a series of cleaning and drying steps, as they have impact properties. As with semiconductor products such as silicon and wafers, disk products such as hard disks also needed to reduce the amount of volatile and eluted substances originating from vehicles that caused surface contamination. Therefore, it has not been proposed to use a polyester resin as the material of the carrier (Japanese Patent Application Laid-Open No. 9-194578), but it is inherently low in impurities and has high rigidity and high impact resistance. Expectations have been raised for polycarbonate with its properties.
ウェハーの表面汚染は、 後の回路制作工程で用いる感光性樹脂の剥 離や膨れ、 エッチングの不良等の原因となるほか、 最終製品であるデ バイスにおける回路抵抗の部分的バラツキや回路欠陥、 寿命の短命化 の遠因にもなるといわれている。 また、 ハードディスクについても記 憶層の欠陥や短命化がいわれている。  Wafer surface contamination causes exfoliation and swelling of the photosensitive resin used in the subsequent circuit fabrication process, poor etching, etc., as well as partial variations in circuit resistance, circuit defects, and service life in the final product device. It is said to be a distant cause of the shortening of life. It is also said that hard disks have defects in storage layers and shorter lives.
本発明は、 シリ コ ン ' ウェハーやハー ドディ スクの表面汚染等を生 じない成形用ポリカーボネー ト樹脂及びその製造方法、 更にはその成 形用ポリカーボネー ト樹脂を用いて成形したシリ コン · ウェハー等半 導体製品又はハー ドディスク等ディスク製品の収納運搬具の提供を目 的とする。  The present invention relates to a molding polycarbonate resin which does not cause surface contamination of a silicon wafer or a hard disk, a method for producing the same, and a silicon resin molded using the molding polycarbonate resin. The purpose is to provide storage and transportation tools for semiconductor products such as wafers or disk products such as hard disks.
発明の開示 Disclosure of the invention
本発明者らは上記課題につき鋭意検討し、 シリ コンウェハー等の半 導体製品又はハー ドディスク等のディスク製品の洗浄 · 乾燥工程にお いて、 ポリカーボネー ト樹脂からなる収納運搬具を用いた場合に半導 体製品の表面汚染の原因となる不純物を究明し、 その知見に基づいて 以下に示す内容を要旨とする本発明を完成させた。  The present inventors have intensively studied the above problems, and have used a storage and transport device made of polycarbonate resin in the washing and drying processes of semiconductor products such as silicon wafers or disk products such as hard disks. In the meantime, the present inventors have investigated impurities that cause surface contamination of semiconductor products, and based on the findings, completed the present invention having the following contents.
〔 1〕 下記 ( 1 ) 〜 ( 3 ) を満足する成形用ポリカーボネート樹脂。 [1] A polycarbonate resin for molding that satisfies the following (1) to (3).
( 1 ) ポリカーボネート樹脂を 108°Cで 3 0分間熱処理したときに発 生する揮発ガスの重量が 0 . 3 p p m以下であり、 (1) The weight of the volatile gas generated when the polycarbonate resin is heat-treated at 108 ° C for 30 minutes is 0.3 ppm or less,
( 2 ) ポリカーボネー ト樹脂を 23°C、 1分間純水で溶出処理したとき の溶出塩素イオンの重量が 5 0 p p b以下であり、 かつ(2) When polycarbonate resin is eluted with pure water at 23 ° C for 1 minute The weight of chloride ions eluted is 50 ppb or less, and
( 3 ) ポリカーボネート樹脂を 23°C、 1分間純水で溶出処理したとき の溶出硫酸イオンの重量が 5 0 p p b以下である (3) The weight of the sulfate ion eluted when the polycarbonate resin is eluted with pure water at 23 ° C for 1 minute is 50 ppb or less.
〔 2〕 ポリカーボネー ト粉末を複数の減圧ベン トを有する 2軸押出機 を用いて、 混練 ' 押出し、 押出されたス トラン ドを塩素イオン濃度及 び硫酸イオン濃度がそれぞれ 5 0重量 p p m以下である冷却水を用い て冷却することからなる上記 〔 1〕 記載の成形用ポリカーボネー ト樹 脂の製造方法。  [2] Polycarbonate powder is kneaded and extruded using a twin-screw extruder having a plurality of decompression vents, and the extruded strands have a chloride ion concentration and a sulfate ion concentration of 50 ppm by weight or less, respectively. The method for producing a polycarbonate resin for molding according to the above [1], wherein the method comprises cooling using a certain cooling water.
〔 3〕 上記 〔 1〕 記載の成形用ポリカーボネ— ト樹脂を用いて成形し た半導体製品又はディスク製品収納運搬具。  [3] A semiconductor product or disk product storage / transport tool molded using the polycarbonate resin for molding described in [1] above.
発明を実施するための最良の形態 BEST MODE FOR CARRYING OUT THE INVENTION
本発明について、 以下に詳細に説明する。  The present invention will be described in detail below.
〔 1〕 本発明の第 1の発明は、 下記 ( 1 ) 〜 ( 3)'で示される低不純 物含有ポリカーボネートである。  [1] The first invention of the present invention is a low-impurity-containing polycarbonate represented by the following (1) to (3) ′.
( 1 ) ポリ カーボネー ト樹脂を 108°Cで 3 0分間熱処理したときに発 生する揮発ガスの重量が 0. 3 p p m以下、 好ましくは 0. 2 p p m 以下であり、  (1) The weight of the volatile gas generated when the polycarbonate resin is heat-treated at 108 ° C for 30 minutes is 0.3 ppm or less, preferably 0.2 ppm or less,
( 2 ) ポリカーボネート樹脂を 23°C、 1分間純水で溶出処理したとき の溶出塩素イオンの重量が 5 0 p p b以下、 好ましく は 4 0 p p b以 下、 力 つ  (2) When the polycarbonate resin is eluted with pure water at 23 ° C for 1 minute, the weight of the eluted chloride ion is 50 ppb or less, preferably 40 ppb or less.
( 3 ) ポリカーボネート樹脂を 23°C、 1分間純水で溶出処理したとき の溶出硫酸イオンの重量が 5 0 p p b以下、 好ましくは 4 0 p p b以 下である  (3) The weight of the sulfate ion eluted when the polycarbonate resin is eluted with pure water at 23 ° C for 1 minute is 50 ppb or less, preferably 40 ppb or less.
本発明において成形用ポリカーボネー ト樹脂からの揮発ガス量は、 半 導体製品の乾燥工程における代表的な条件下で測定され、 樹脂べレッ トのサンプルを温度 108 で 3 0分間熱処理したときに発生する揮発 性ガスの重量であって、 下記のガスク ロマ トグラフィ一により測定さ れる値で規定される。 In the present invention, the amount of volatile gas from the molding polycarbonate resin is half. It is measured under typical conditions in the drying process of conductor products, and is the weight of volatile gas generated when a resin burette sample is heat-treated at a temperature of 108 for 30 minutes. It is specified by the measured value.
すなわち、 加熱温度 108°Cでサンプルをヘリ ゥムガスを流しながら 3 0分間加熱し、 揮発分を一 3 0 °Cで吸着材 T e n a x— T Aに吸着さ せ、 次いで吸着した揮発成分を 3 5 8 °Cで 2分間脱離させ、 ガスク ロ マ トグラフィ一により測定する。  That is, the sample was heated at a heating temperature of 108 ° C for 30 minutes while flowing a stream of hemi-gas, and the volatile components were adsorbed on the adsorbent Tenax-TA at 130 ° C, and then the adsorbed volatile components were removed. Desorb for 2 minutes at ° C and measure by gas chromatography.
〔ガスク口マ トグラフィ一の測定条件〕  [Measurement conditions for gask mouth chromatography]
• カラム : H P— 5 MS  • Column: HP—5 MS
• 力ラム温度 : 5 5 °C ( 3分間) 保持→ 1 0 °C /分昇温→ 2 7 5 °C ( 9 分間) 保持  • Force ram temperature: 55 ° C (3 minutes) hold → 10 ° C / min temperature rise → 27 5 ° C (9 minutes) hold
' イ ンジェクショ ン温度 : 2 8 0 t  '' Injection temperature: 280 t
'検出器: F I D ( 2 8 0 °C)  'Detector: F ID (280 ° C)
• 定量 : 全てのピークをへブタンと して定量  • Quantitation: Quantify all peaks as heptane
なお、 この揮発性ガスは、 例えばポリカーボネー トを界面重合法で 製造する際に用いる溶媒由来の塩化メチレンの他、 ペレツ ト製造時の コンタミによるガスであると推定される。  The volatile gas is presumed to be, for example, methylene chloride derived from a solvent used for producing polycarbonate by the interfacial polymerization method, and also gas due to contamination at the time of pellet production.
後述するよ うに、 従来から半導体製品又はディスク製品収納運搬具に 用いられていたポリカーボネートでは、 この揮発ガスの発生重量は 0. 4〜 0. 5 p p mであった。 この揮発ガスの発生重量が 0. 3 p p m を超えると半導体製品又はディスク製品の汚れを避けることが困難で ある。 As will be described later, in a polycarbonate that has been conventionally used for a semiconductor product or a disc product storage and transportation device, the generated weight of the volatile gas was 0.4 to 0.5 ppm. If the generated weight of this volatile gas exceeds 0.3 ppm, it is difficult to avoid contamination of semiconductor products or disc products.
本発明において成形用ポリカーボネー ト樹脂から溶出する塩素ィォ ン、 硫酸イオン量は、 半導体製品の洗浄工程における代表的な条件下 で測定され、 樹脂ペレツ トのサンプルをミ リポア製の超純水製造装置 M i 1 1 i 一 Qシステムによって得られた純水 (比抵抗 1 8 Μ Ω以 上) を用い、 溶出する塩素イオン、 硫酸イオンの重量をイオンクロマ トグラフィ一で測定する。 In the present invention, chlorine eluted from the polycarbonate resin for molding is used. The amounts of sulfate and sulfate ions were measured under typical conditions in the washing process of semiconductor products, and a sample of resin pellets was purified using a Millipore ultrapure water production system Mi11iQ system. Using water (specific resistance: 18ΩΩ or more), measure the weight of the eluted chloride and sulfate ions by ion chromatography.
すなわち、 測定用純水で充分に洗浄したポリ プロピレン製試料瓶に 樹脂べレッ トのサンプルを入れ、 次いで 23°Cの純水 2 5 ミ リ リ ッ トル を加え、 密閉後、 23°Cで 1分間溶出処理を行った。 この溶出水をィォ ンクロマトグラフィ (横河電気製 I C 7 0 0 0 ) にて塩素イオン重量 及び硫酸イオン重量を測定した。  That is, a resin bottle sample is put into a polypropylene sample bottle that has been thoroughly washed with pure water for measurement, then 25 milliliters of pure water at 23 ° C is added, and after sealing, at 23 ° C Elution was performed for 1 minute. The eluted water was subjected to ion chromatography (IC700, manufactured by Yokogawa Electric Corporation) to measure the weight of chloride ions and the weight of sulfate ions.
この溶出塩素イオン及び硫酸イオンの重量がそれぞれ 5 0 p p bを 超えると半導体製品の汚れを避けるのが困難である。  If the weight of each of the eluted chloride ions and sulfate ions exceeds 50 ppb, it is difficult to avoid contamination of semiconductor products.
なお、 この塩素イオン、 硫酸イオンは、 本発明者らの知見によれば ペレツ ト製造時のス トランド冷却水中の溶解物に主に由来するもので ある。  According to the knowledge of the present inventors, the chlorine ions and the sulfate ions are mainly derived from dissolved substances in strand cooling water at the time of pellet production.
上記した不純物量の少ないポリカーボネー トは、 半導体製品収納運 搬具を成形する材料と して、 更なる品質の向上した材料と して意義が ある。  Polycarbonate with a small amount of impurities as described above is significant as a material with further improved quality as a material for molding semiconductor product storage and transportation tools.
〔 2〕 本発明の第 2の発明は、 上記 〔 1〕 記載の不純物含有量が低い 成形用ポリカーボネー ト樹脂を製造する方法に関するものであり、 ポ リカーボネー ト粉末を複数の減圧ベン トを有する 2軸押出機を用いて、 混練 · 押出し、 押し出されたス トラ ン ドを塩素イオン濃度及び硫酸ィ オン濃度がそれぞれ 5 0重量 p p m以下である冷却水を用いて冷却す ることにより、 所期の目的が達成される。 すなわち、 上記 〔 1〕 の ( 1 ) 記載の揮発性ガスを低減する方法と して 2個以上の減圧ベント付き 2軸押出機をペレツ ト造粒機と して使 用することが有効であり、 好ましく は 3個以上の減圧ベントが付帯さ れているのがよい。 [2] A second invention of the present invention relates to a method for producing a molding polycarbonate resin having a low impurity content according to the above [1], and comprising a plurality of decompressing vents for polycarbonate powder. Using a twin-screw extruder, kneading, extruding, and extruding the strand are performed using cooling water having a chloride ion concentration and a sulfate ion concentration of 50 ppm by weight or less, respectively. Is achieved. That is, it is effective to use a twin-screw extruder with two or more decompression vents as a pellet granulator as a method for reducing the volatile gas described in (1) of [1] above. Preferably, three or more decompression vents are provided.
減圧ベン トよ り混練機中で分離されてく る揮発ガスを抜くが、 減圧 ベン トを混練機の中央とダイス近辺の混練機出口に設けるほか第 3、 第 4の減圧ベントを適宜配した混練機がよく、 しかも二軸混練機を有 するタイプが揮発ガスの脱気効果が大きく、 好ましい。  Volatile gas separated in the kneader is removed from the decompression vent, but a decompression vent is provided at the center of the kneader and at the exit of the kneader near the die, and a third and fourth decompression vent is appropriately arranged. It is preferable to use a type that has a good mixer and has a twin-screw kneader because it has a large degassing effect of volatile gas.
このよ うなマルチ減圧ベン トつき二軸混練機の成形条件は、 投入す る原料ポリカーボネート粉体の性状によって異なるが、 例えば口径 7 Ο ηιιη φの二軸混練機で、 シリ ンダー温度 2 4 0〜 3 5 0 °C、 押出速 度 2 5 0 k g 時間で行われる。 また、 必要に応じて、 一度、 混練機 を通した原料ポリカーボネートペレツ トを再度、 混練機に通すことに より揮発ガスの量を削減することができる。  The molding conditions of such a twin-screw kneader with a multi-vacuum vent differ depending on the properties of the raw material polycarbonate powder to be charged.For example, with a twin-screw kneader having a diameter of 7 mm ηιιηφ, the It is performed at 350 ° C and an extrusion speed of 250 kg hours. Further, if necessary, the amount of volatile gas can be reduced by once passing the raw material polycarbonate pellets through the kneader again through the kneader.
このよ うなペレッ ト造粒機は、 通常、 ポリ カーボネ一 ト製造工程の 最終工程に設けられ、 造粒の際、 併せて各種添加剤 (酸化防止剤、 耐 候剤ほか) も適宜、 添加される。 その添加機構等を利用して水を添加 して、 揮発性ガスの低減を一層促進させる技術が本出願人から提案さ れており (特公平 5— 2 7 6 4 7号公報) 、 本発明の課題にも有効に 機能しうるものである。  Such pelletizers are usually installed in the final step of the polycarbonate manufacturing process, and various additives (antioxidants, weathering agents, etc.) are also added as appropriate during granulation. You. The present applicant has proposed a technique for further promoting the reduction of volatile gas by adding water by using the addition mechanism or the like (Japanese Patent Publication No. 5-276647). It can also function effectively for the above problems.
従来は、 シングルベン ト付きの単軸混練機を用いており、 前記したよ うに揮発性ガスの発生重量は 0. 4〜 0. 5 p p mであり、 本発明の 方法によればその 1 0分の 1以下にも低減可能である。 Conventionally, a single-screw kneader with a single vent has been used, and as described above, the generated weight of volatile gas is 0.4 to 0.5 ppm, and according to the method of the present invention, 10 minutes is required. It can be reduced to 1 or less.
更に、 上記 〔 1〕 の ( 2 ) 及ぴ ( 3 ) 記載の溶出塩素イオン及ぴ硫 酸イオンの量を低減するため、 押し出されたス トラン ドの冷却用水の 水質を制限するのが有効である。 すなわち、 上記二軸混練機のダイス を出た熱いス トラン ドは、 冷却水に満たされた水槽の中を通り、 冷却 されてス トランドカッターに供給される。 この冷却水が、 上記溶出塩 素ィオン及び硫酸イオンの混入源と見ており、 これをそれぞれ所定の 条件における溶出量が 5 0 p p b以下となるよ うに純水を用いる。 こ のよ うな冷却水の純度レベルは、 それぞれのィオン濃度が 5 0重量 p p m以下、 好ましく は 4 0重量 p p m以下であればよく 、 よ り高度で あれば品質的には良い方向に作用するが、 一般的にはコス トアップの 要因になって、 この限界値は工業的に大変意義あることである。 また、 このほか製造されたペレツ トの保管状態を維持するため、 ク リーンな ペレッ ト収納袋 (例えば昭和パックス (株) 製エルコンク リーン内袋) を用いるなどが好ましい。 Furthermore, the elution chloride ion and sulfur described in (2) and (3) of [1] above To reduce the amount of acid ions, it is effective to limit the quality of the extruded strand cooling water. That is, the hot strand exiting the dice of the twin-screw kneader passes through a water tank filled with cooling water, is cooled, and is supplied to a strand cutter. This cooling water is regarded as a source of contamination of the above-mentioned elution chloride ion and sulfate ion, and pure water is used so that the elution amount under each predetermined condition is 50 ppb or less. The purity level of such cooling water may be such that each ion concentration is not more than 50 ppm by weight, preferably not more than 40 ppm by weight. However, this limit value is very industrially significant because it generally causes cost increase. In addition, in order to maintain the storage state of the produced pellets, it is preferable to use clean pellet storage bags (for example, Elcon clean inner bags manufactured by Showa Pax Co., Ltd.).
〔 3〕 本発明の第三の発明は、 上記 〔 1〕 の不純物含有量が低い成形 用ポリカーボネー ト樹脂を用いた成形品用途発明であり、 シリ コ ンゥ ェハ—やハー ドディスクの収納運搬具に好適に用いることができる。 これら半導体製品の代表的なシリ コンウェハー収納運搬具は、 通常、 口径 1 5 0〜 3 0 O m mのウェハ一を 1〜 2 5枚を隙間を設けて整列 収納する構造を有している。  [3] The third invention of the present invention is a molded article application invention using the molding polycarbonate resin having a low impurity content of the above [1], and is used for storing silicon wafers and hard disks. It can be suitably used for a carrier. A typical silicon wafer storage and transport tool for these semiconductor products usually has a structure in which 1 to 25 wafers each having a diameter of 150 to 30 Omm are arranged and stored with a gap therebetween.
本発明について、 更に、 実施例を用いて詳細に説明する。  The present invention will be further described in detail using examples.
なお、 実施例で用いる試験方法は、 以下のとおりである。 The test methods used in the examples are as follows.
( 1 ) ハー ドディスクの表面汚れの簡易評価方法  (1) Simple evaluation method for hard disk surface contamination
得られたペレッ トをハードディスク上に置き、 6 0 °C、 8 0 % R H (室 温湿度)の条件下で 9 6時間放置後、 ハー ドディ スク表面のもや、 か すみ、 腐食状況を目視により観察する。 The obtained pellet is placed on a hard disk and left at 60 ° C and 80% RH (room temperature and humidity) for 96 hours. Check the corners and corrosion status visually.
観察の結果を良好又は不良で示す。  The result of the observation is shown as good or bad.
〔実施例 1〕  (Example 1)
トリ プルベン ト付き二軸混練機 (東芝機械 TEM70B)に原料ポリカーボ ネー ト (出光石油化学 (株) 製 K D 1 9 0 0 ) 3 0 O k gを供給し、 シリ ンダー温度 2 8 0 °C、 押出速度 2 5 0 k gノ時間でガスを抜きな がら混練 '押出して、 ス トランド冷却用水の水質が塩素イオン濃度 (重 量比) 2 0 p p m、 硫酸イオン濃度 (重量比) 2 2 p p mである冷却 水槽にス トラン ドを通し、 ペレッ トを作成した。 このペレッ トサンプ ル 2 gを採って前記したガスク 口マ トグラフィ一分析法により、 揮発 分量を測定した。 また、 別にペレッ トサンプル 2 5 gを採って前記し たイオンクロマ トグラフィー分析法により、 溶出塩素イオン、 硫酸ィ オン量を測定した。 これらの測定結果を表 1および表 2に示した。 更 に、 得られたペレッ トを用いて、 前記したハー ドディスクの表面汚れ の簡易評価方法で試験し、 その評価結果を表 3に示した。  Feed 30 kg of raw polycarbonate (KD190, manufactured by Idemitsu Petrochemical Co., Ltd.) to a twin-screw kneader with a triple vent (Toshiba Machine TEM70B) and extrude at a cylinder temperature of 280 ° C. Kneading while degassing at a speed of 250 kg and extruding, cooling the strand cooling water to have a chlorine ion concentration (weight ratio) of 20 ppm and a sulfate ion concentration (weight ratio) of 22 ppm. A pellet was created by passing a strand through the aquarium. 2 g of this pellet sample was taken, and the volatile content was measured by the gas chromatography-analytical method described above. Separately, 25 g of a pellet sample was taken, and the amounts of eluted chloride ions and sulfate ions were measured by the ion chromatography analysis method described above. Tables 1 and 2 show the measurement results. Further, using the obtained pellets, a test was carried out by the above-mentioned simple evaluation method of the surface dirt of the hard disk, and the evaluation results are shown in Table 3.
〔実施例 2〕  (Example 2)
実施例 1 において、 原料ポリ カーボネー トのほかに純水 3 k g を押 出機の第二ベント直前から添加して、 シリ ンダー温度 2 8 0 °C、 押出 速度 2 5 0 k g 時間、 水とポリカーボネー ト との接触時間 2 . 0秒 で、 ガスを抜きながら混練 ·押出した以外は同様にペレツ トを作成し、 評価した。 その評価結果を表 1 、 表 2及び表 3に示した。  In Example 1, in addition to the raw material polycarbonate, 3 kg of pure water was added immediately before the second vent of the extruder, and the cylinder temperature was 280 ° C, the extrusion speed was 250 kg hours, and water and polycarbonate were used. A pellet was prepared and evaluated in the same manner except that the contact time with the net was 2.0 seconds, and kneading and extrusion were performed while removing gas. The evaluation results are shown in Tables 1, 2 and 3.
〔実施例 3〕  (Example 3)
実施例 2で作成したペレツ トサンプルを再度、 同じ条件で混練機にか け、 ペレトを作成し、 その後も同様に評価した。 その評価結果を表 1、 表 2及び表 3に示した。 The pellet sample prepared in Example 2 was again applied to a kneader under the same conditions to prepare a pellet, and thereafter, the same evaluation was performed. Table 1 shows the evaluation results. The results are shown in Tables 2 and 3.
〔比較例 1 :]  [Comparative Example 1:]
実施例 1 において、 ト リプルベントつき 2軸押出機をシングルベン ト つき単軸押出機 (日本プラコン (株) T M G 6 5 ) に代えてペレッ ト を作成した以外は同様に作成し、 評価した。 その評価結果を表 1 、 表 2および表 3に示した。 In Example 1, a twin-screw extruder with a triple vent was replaced with a single-screw extruder with a single vent (TMG65, Nippon Placon Co., Ltd.), and a pellet was created in the same manner and evaluated. The evaluation results are shown in Tables 1, 2 and 3.
〔比較例 2〕  (Comparative Example 2)
実施例 2において、 ス トラン ド冷却用水の水質を表 2のよ うに変えた 以外は同様に実施した。 その評価結果を表 1、 表 2および表 3に示し た。 Example 2 was repeated in the same manner as in Example 2 except that the quality of the strand cooling water was changed as shown in Table 2. The evaluation results are shown in Tables 1, 2 and 3.
表 1 押出機 ·条件 揮発性ガス量 Table 1 ExtruderConditions Volatile gas volume
( w t p p m ) 実施例 1 トリフ。ルへ、'ン卜付き 2軸押出機 0 . 0 4 5  Example 1 Trif. Twin-screw extruder with unit
実施例 2 トリフ。ルへ"ント付き 2軸押出機 +水添加 0 . 0 3 0 Example 2 Trif. Twin screw extruder with water + water addition 0.0 3 0
実施例 3 実施例 2のサンフ。ルを再度混練 0 . 0 1 7 Example 3 The sanfu of Example 2. Knead again 0. 0 1 7
比較例 1 シンク"ルへ"ント付き単軸押出機 0 . 4 0 5 Comparative Example 1 Single screw extruder with sink "0.45"
比較例 2 トリフ。 レへ"ント付き 2軸押出機 +水添加 0 . 0 8 0 Comparative Example 2 Trif. Twin screw extruder with water + water addition 0.08 0
表 2
Figure imgf000012_0001
Table 2
Figure imgf000012_0001
表 3Table 3
Figure imgf000012_0002
本発明の方法による揮発分量の低減効果は、 実施例 1 〜 3に示す通 り、 従来例の比較例 1 に較べ、 1 ケタ少ないレベルにある。 なお、 実 施例 1 に較べ、 水を添加した実施例 2では水添加による効果が確認で き、 実施例 3では繰り返しによる低減効果が確認できた。
Figure imgf000012_0002
As shown in Examples 1 to 3, the effect of reducing the amount of volatile matter by the method of the present invention is one digit lower than that of Comparative Example 1 of the conventional example. Compared with Example 1, the effect of adding water was confirmed in Example 2 in which water was added, and in Example 3, the effect of reduction by repetition was confirmed.
他方、 ス トランド冷却用水の水質を一定に制限することによ り、 溶 出塩素イオン、 硫酸イオンの量を充分に低減可能である。 On the other hand, by limiting the water quality of strand cooling water to a certain level, The amount of chlorine ions and sulfate ions can be reduced sufficiently.
なお、 最終的にハー ドディ スクの汚れ評価試験の結果、 ハー ドデイス クの表面汚れが揮発ガス量が大きいか又は溶出塩素イオンや硫酸ィォ ンの量の大きい比較例 1および比較例 2で得たペレツ トを用いた場合 に較べ、 本発明の実施例 1 〜 3で示すそのいずれも低いペレツ トを用 いた場合のほうが少ない。 Finally, as a result of the hard disk dirt evaluation test, the surface dirt of the hard disk was obtained in Comparative Example 1 and Comparative Example 2 in which the amount of volatile gas was large or the amount of eluted chloride ions or sulfate was large. Compared to the case where the pellets were used, the cases where the low pellets shown in Examples 1-3 of the present invention were used were less.
産業上の利用可能性 Industrial applicability
シリ コン · ウェハ一やハードディスクの表面汚染等を生じない成形 用ポリカーボネー ト樹脂及びその製造方法、 更にはその成形用ポリ力 ーボネー ト樹脂を用いて成形したシリ コン · ウェハー等半導体製品又 はハードディスク等ディスク製品の収納運搬具を提供する。  Polycarbonate resin for molding that does not cause surface contamination etc. of silicon wafers and hard disks, its manufacturing method, and semiconductor products such as silicon wafers and hard disks molded using the molding polycarbonate resin Provide a storage and transportation device for disk products.

Claims

结 P冃 求 の 结 P 冃
1 . 下記 ( 1 ) 〜 ( 3 ) を満足する成形用ポリカーボネー ト樹脂。 1. A polycarbonate resin for molding that satisfies the following (1) to (3).
( 1 ) ポリカーボネート榭脂を 108°Cで 3 0分間熱処理したときに発 生する揮発ガスの重量が 0. 3 p p m以下であり、 (1) The weight of the volatile gas generated when the polycarbonate resin is heat-treated at 108 ° C for 30 minutes is 0.3 ppm or less,
( 2 ) ポリ カーボネー ト樹脂を 23°C、 1分間純水で溶出処理したとき の溶出塩素イオンの重量が 5 0 p p b以下であり、 かつ  (2) The weight of chloride ion eluted when the polycarbonate resin is eluted with pure water at 23 ° C for 1 minute is 50 ppb or less, and
( 3 ) ポリカーボネート樹脂を 23°C、 1分間純水で溶出処理したとき の溶出硫酸イオンの重量が 5 0 p p b以下である  (3) The weight of the sulfate ion eluted when the polycarbonate resin is eluted with pure water at 23 ° C for 1 minute is 50 ppb or less.
2. ポリカーボネー ト粉末を複数の減圧ベン トを有する 2軸押出機を 用いて、 混練 '押出し、 押出されたス トランドを塩素イオン濃度及び 硫酸イオン濃度がそれぞれ 5 0重量 p p m以下である冷却水を用いて 冷却することからなる請求項 1記載の成形用ポリカーボネー ト樹脂の 製造方法。  2. Kneading and extruding the polycarbonate powder using a twin-screw extruder having a plurality of decompression vents, and cooling the extruded strand with a chloride ion concentration and a sulfate ion concentration of 50 wt ppm or less, respectively. 2. The method for producing a polycarbonate resin for molding according to claim 1, wherein the method comprises cooling using a resin.
3. 請求項 1記載の成形用ポリ カーボネ— ト樹脂を用いて成形した半 導体製品又はディスク製品収納運搬具。  3. A semiconductor product or disk product storage and transportation device molded using the polycarbonate resin for molding according to claim 1.
PCT/JP2000/000231 1999-01-21 2000-01-19 Polycarbonate resin for formed article, method for production thereof and container/carrier for semiconductor product using the same WO2000043436A1 (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006334895A (en) * 2005-06-01 2006-12-14 Ueno Technology:Kk Manufacturing method of pellet of liquid crystalline polymer or pellet of liquid crystalline polymer composition
WO2009060967A1 (en) 2007-11-06 2009-05-14 Teijin Chemicals Ltd. Process for producing polycarbonate resin pellet and molded article
CN104513389A (en) * 2013-10-01 2015-04-15 三星Sdi株式会社 Container for precision member and method for preparing the same

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61221225A (en) * 1985-03-28 1986-10-01 Idemitsu Petrochem Co Ltd Production of molding polycarbonate resin
DE3734681A1 (en) * 1986-10-14 1988-04-21 Sony Corp OPTICAL INFORMATION RECORDING MEDIUM
EP0300485A2 (en) * 1987-07-21 1989-01-25 Mitsubishi Gas Chemical Company, Inc. Process for producing polycarbonate resin molding material with low particle content
JPH0959368A (en) * 1995-08-29 1997-03-04 Teijin Ltd Production of polycarbonate resin
JPH09157375A (en) * 1995-12-13 1997-06-17 Teijin Ltd Production of polycarbonate resin
EP0870791A2 (en) * 1997-04-11 1998-10-14 General Electric Company Reducing ionic impurities content in polycarbonate resins

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61221225A (en) * 1985-03-28 1986-10-01 Idemitsu Petrochem Co Ltd Production of molding polycarbonate resin
DE3734681A1 (en) * 1986-10-14 1988-04-21 Sony Corp OPTICAL INFORMATION RECORDING MEDIUM
EP0300485A2 (en) * 1987-07-21 1989-01-25 Mitsubishi Gas Chemical Company, Inc. Process for producing polycarbonate resin molding material with low particle content
JPH0959368A (en) * 1995-08-29 1997-03-04 Teijin Ltd Production of polycarbonate resin
JPH09157375A (en) * 1995-12-13 1997-06-17 Teijin Ltd Production of polycarbonate resin
EP0870791A2 (en) * 1997-04-11 1998-10-14 General Electric Company Reducing ionic impurities content in polycarbonate resins

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006334895A (en) * 2005-06-01 2006-12-14 Ueno Technology:Kk Manufacturing method of pellet of liquid crystalline polymer or pellet of liquid crystalline polymer composition
WO2009060967A1 (en) 2007-11-06 2009-05-14 Teijin Chemicals Ltd. Process for producing polycarbonate resin pellet and molded article
JP5119263B2 (en) * 2007-11-06 2013-01-16 帝人化成株式会社 Method for producing polycarbonate resin pellets
CN104513389A (en) * 2013-10-01 2015-04-15 三星Sdi株式会社 Container for precision member and method for preparing the same

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