WO2000042656A1 - Power semiconductor module with cover - Google Patents

Power semiconductor module with cover Download PDF

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Publication number
WO2000042656A1
WO2000042656A1 PCT/DE2000/000031 DE0000031W WO0042656A1 WO 2000042656 A1 WO2000042656 A1 WO 2000042656A1 DE 0000031 W DE0000031 W DE 0000031W WO 0042656 A1 WO0042656 A1 WO 0042656A1
Authority
WO
WIPO (PCT)
Prior art keywords
power semiconductor
semiconductor module
cover
openings
plastic housing
Prior art date
Application number
PCT/DE2000/000031
Other languages
German (de)
French (fr)
Inventor
Manfred Loddenkötter
Gottfried Ferber
Andreas Lenniger
Original Assignee
eupec Europäische Gesellschaft für Leistungshalbleiter mbH & Co. KG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by eupec Europäische Gesellschaft für Leistungshalbleiter mbH & Co. KG filed Critical eupec Europäische Gesellschaft für Leistungshalbleiter mbH & Co. KG
Publication of WO2000042656A1 publication Critical patent/WO2000042656A1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
    • H01L23/18—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
    • H01L23/24—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device solid or gel at the normal operating temperature of the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
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    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48464—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area also being a ball bond, i.e. ball-to-ball
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49175—Parallel arrangements
    • H—ELECTRICITY
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01068—Erbium [Er]
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Definitions

  • the invention relates to a power semiconductor module with a plastic housing according to claim 1.
  • a power semiconductor module is provided with a plastic housing designed as a frame, on the inside of which a number n guides for external connecting elements are provided m predetermined distances, with a housing base designed as a ceramic plate and inserting the plastic housing, the ceramic plate in each case has a metallization on its upper and lower side, which is structured on the upper side facing the interior of the housing to form conductor tracks and which is equipped with at least one semiconductor component and connecting elements, with connecting elements which form external connections and form a maximum of nm in the guides which have bond areas at their lower ends and which over the
  • Connecting elements with the at least one semiconductor component and / or with the metallization are electrically connected, with a cover that can be connected to the plastic housing.
  • connection elements for the external connections are arranged in the plastic housing.
  • a generic power semiconductor module is known, in which the connection elements are pressed into the openings of the plastic housing. This improves the reliability of the internal bond connections between the connection elements and the substrate, since there is no longer any danger that the connection elements will become loose in the plastic housing.
  • the lead described there The semiconductor module therefore has guide elements along the plastic housing, in some of which connection elements are introduced. The number and the locations at which the connection elements are introduced into the guide elements are dependent on the electrical structure within the power semiconductor module. A cover is then applied to the power semiconductor module.
  • connection elements protrude from the cover, that is, the connection elements are inserted through the openings in the cover.
  • the openings are arranged so that unused guide elements are closed by the cover.
  • the cover consequently has openings at the points at which the connection elements are to be carried out.
  • This has the consequence that different covers have to be manufactured for different arrangements of the connection elements in a power semiconductor module. This requires separate tools for creating the cover and for mounting with the respective power semiconductor module. This also requires a high logistical effort.
  • the object of the present invention is to provide a generic power semiconductor module with a cover, in which connection elements protrude from the cover, but this is independent of the arrangement of the external connection elements
  • the power semiconductor module or the cover should be as simple and inexpensive to manufacture as possible.
  • this object is achieved by a power semiconductor module with the features of patent claim 1, that is to say by a generic power semiconductor module which is characterized by connecting elements which project outward openings that can be introduced through the cover.
  • a power semiconductor module with the features of patent claim 1, that is to say by a generic power semiconductor module which is characterized by connecting elements which project outward openings that can be introduced through the cover.
  • n removable openings are provided in the cover.
  • the n openings that can be introduced and the n guides are arranged in such a way that the connection elements protrude orthogonally to the housing floor or cover from the power semiconductor module.
  • the n insertable openings and the n guides are arranged one above the other.
  • the number n of openings that can be made and the number of guides is therefore the same.
  • the placeholder n stands for the number of guide elements present in the power semiconductor module or the openings that can be made in the cover. This procedure means that only one type of cover is required for each power semiconductor module.
  • the cover advantageously has predetermined breaking points at the locations of the receptive openings. This makes it easier to pierce the openings that can be introduced by means of the connecting elements.
  • the predetermined breaking points can be created by pre-punching at the locations of the openings that can be introduced.
  • the lid breaks open at the points of the openings that can be inserted. Flaps are formed which nestle against connection elements. The cover reliably closes all other spaces not occupied by connection elements. The cover is thus positively and positively connected to the plastic housing.
  • connection elements have lugs which rest on the inside of the plastic housing and fix the connection elements in their position. These lugs preferably have the shape of barbs, so that the connection elements are guided closely to the guide elements and are secured against being pulled out. It is also conceivable to provide the connection elements with goitles which fix the connection elements in the guide elements.
  • the interior of the housing is preferably at least partially filled with a casting compound. This is used for moisture-tight encapsulation. Ideally this is a casting compound
  • Soft casting compound and a hard casting compound are provided on the soft casting compound.
  • the plastic housing typically consists of a frame, the connection elements being arranged in the frame.
  • Figure 2 is a plan view of the power semiconductor module with a view of the interior of the housing;
  • 3a shows a plan view of the outside of the cover according to the invention, as it is applied to the plastic housing, and
  • FIG. 3b shows a plan view of the inside of the cover according to the invention with the openings made and the predetermined breaking points.
  • the power semiconductor module 1 consists of a plastic housing 2, in which a ceramic plate 5 is inserted as the housing base 6. This is provided on the upper side 7 and the lower side 8 with a metalization 11.
  • the metallization 11 on the upper side 7 faces the interior 15 of the housing and is structured to form conductor tracks.
  • Semiconductor components 9 are applied to this side 7 of the ceramic plate 5. These semiconductor components 9 are, for example, power semiconductor components such as IGBTs, MCTs, power transistors or power diodes. Furthermore, semiconductor components 9 are provided, which assume a control function. Furthermore, there are connecting elements 10, which have the shape of aluminum wires. These connecting elements 10 are applied to the semiconductor components 9 or the metallization 11 by means of bonding methods.
  • the plastic housing 2 is formed in the shape of a frame, in which connection elements 4 m guide elements 3 of the plastic frame 2 are provided.
  • the connecting elements 4 the guide elements 3 are inserted from the top and are thereby fixed.
  • the connection elements 4 have lugs 14 which bear against the inside of the plastic housing 2. As a result, the connection elements are fixed in their position. These lugs 14 have the function of barbs, which secure the connecting elements 4 against unintentional pulling out. As a result, the bond connections between the connection elements 4 and the semiconductor components 9 or the metallization 11 are secured against destruction.
  • the connecting elements run in the interior of the housing m approximately parallel to the housing base ⁇ .
  • the power semiconductor module 1 also has a cover 12 which closes the module in its end position.
  • the connecting elements 4 are inserted through openings 13 m in the cover, which protrude from the final position of the cover.
  • the cover closes unused guide elements 3.
  • the power semiconductor module has one on the underside
  • Heat sink 16 which is connected on the one hand to the plastic housing 2 and on the other hand to the housing base 6.
  • FIG. 2 shows a top view of the power semiconductor module 1, the housing base having already been connected to the plastic housing 2. From this perspective it can be seen that the guide elements are arranged at regular intervals of 2 m along the entire circumference of the plastic housing. It is of course not necessary to attach the guide elements at regular intervals and along the entire circumference. Only a few of the guide elements 3 are equipped with connection elements 4. By providing the guide elements 3 along the entire circumference of the plastic housing 2, the power semiconductor module can be flexibly equipped. According to the arrangement of the Semiconductor components can be provided in the most suitable positions, the connection elements 4 m the guide elements 3. As a result, short bond connections between the connection elements and the semiconductor components or the metallization 11 are possible.
  • FIG. 3 a shows a top view of the outside of the cover, as it was correctly connected to the plastic housing in FIG. 2.
  • the openings 13 which are introduced at the locations of the connecting elements 4 are already visible here.
  • the openings 13 are only introduced when the cover 12 and the plastic housing 2 are joined by piercing the connecting elements.
  • FIG. 3b shows the inside, that is to say the side of the cover, which faces the interior of the housing.
  • the cover has 3 predetermined breaking points 18 at the locations of the guide elements 3 of the plastic housing. These can be produced, for example, by pre-punching. Between two openings 13 that can be inserted, webs 17 are arranged, which have remained through the pre-punching of the predetermined breaking points 18.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Dispersion Chemistry (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Coupling Device And Connection With Printed Circuit (AREA)

Abstract

A power semiconductor module (1), whereby connector elements (4) are accommodated in the openings of a plastic housing (2). The power semiconductor module is also provided with a closing cover (12). The connector elements protrude above the cover and jut out of the openings. The openings are created when the cover and the plastic housing are assembled together and the connector elements protrude therethrough, whereby any arrangement of the connector elements in the power semiconductor module is possible. The cover closes the power semiconductor module at points where no connector elements are provided.

Description

Beschreibungdescription
Leistungshalbleitermodul mit DeckelPower semiconductor module with cover
Die Erfindung betrifft ein Leistungshalbleitermodul mit einem Kunststoffgehause gemäß dem Patentanspruch 1.The invention relates to a power semiconductor module with a plastic housing according to claim 1.
Demgemäß ist ein Leistungshalbleitermodul vorgesehen mit einem als Rahmen ausgebildeten Kunststoffgehause, an dessen In- nenseite m vorgegebenen Abstanden eine Anzahl n Fuhrungen für externe Anschlußelemente vorgesehen sind, mit einem als Keramikplatte ausgebildeten Gehauseboden, der m das Kunst- stoffgehause eingesetzt ist, wobei die Keramikplatte jeweils auf ihrer oberen und ihrer unteren Seite eine Metallisierung aufweist, die auf der oberen, dem Gehauseinneren zugewandten Seite zur Bildung von Leiterbahnen strukturiert ist und die mit zumindest einem Halbleiterbauelement und Verbmdungsele- menten bestuckt ist, mit maximal n m den Fuhrungen fixierten, äußere Anschlüsse bildenden Anschlußelementen, die an ihren unteren Enden Bondflachen aufweisen und die über dieAccordingly, a power semiconductor module is provided with a plastic housing designed as a frame, on the inside of which a number n guides for external connecting elements are provided m predetermined distances, with a housing base designed as a ceramic plate and inserting the plastic housing, the ceramic plate in each case has a metallization on its upper and lower side, which is structured on the upper side facing the interior of the housing to form conductor tracks and which is equipped with at least one semiconductor component and connecting elements, with connecting elements which form external connections and form a maximum of nm in the guides which have bond areas at their lower ends and which over the
Verbindungselemente mit dem zumindest einen Halbleiterbauelement und/oder mit der Metallisierung elektrisch verbunden sind, mit einem mit dem Kunststoffgehause verbindbaren Dek- kel.Connecting elements with the at least one semiconductor component and / or with the metallization are electrically connected, with a cover that can be connected to the plastic housing.
Solche Leistungshalbleitermodule sind seit langem bekannt. Bei diesem Leistungshalbleitermodulen sind die Anschlußelemente für die äußeren Anschlüsse m dem Kunststoffgehause angeordnet. Aus der WO 98/52221 ist ein gattungsgemaßes Lei- stungshalbleitermodul bekannt, bei dem die Anschlußelemente m Offnungen des Kunststoffgehauses eingepreßt sind. Hierdurch wird die Zuverlässigkeit der internen Bondverbindungen zwischen den Anschlußelementen und dem Substrat verbessert, da keine Gefahr mehr besteht, daß die Anschlußelemente im Kunststoffgehause sich lockern. Das dort beschriebene Lei- stungshalbleitermodul weist entlang des Kunststoffgehauses deshalb Fuhrungselemente auf, m denen teilweise Anschlußelemente eingebracht sind. D e Anzahl und die Orte, m welchem die Anschlußelemente in die Fuhrungselemente eingebracht wer- den, sind abhangig vom elektrischen Aufbau innerhalb des Lei- stungshalbleitermodules . Auf das Leistungshalbleitermodul wird anschließend ein Deckel aufgebracht. Dabei ragen die Anschlußelemente aus dem Deckel heraus, das heißt die Anschlußelemente sind m vorgesehene Offnungen m dem Deckel hindurch gesteckt. Die Offnungen sind so angeordnet, daß nicht benutzte Fuhrungselemente durch den Deckel verschlossen sind. Der Deckel hat folglich Offnungen an den Stellen, an denen die Anschlußelemente durchgeführt werden sollen. Dies hat jedoch zur Folge, daß für unterschiedliche Anordnungen der Anschlußelemente bei einem Leistungshalbleitermodul unterschiedliche Deckel gefertigt werden müssen. Dies erfordert separate Werkzeuge zur Erstellung der Deckel und zur Bestuk- kung mit dem jeweiligen Leistungshalbleitermodul. Hierdurch ist auch ein hoher logistischer Aufwand notwendig.Such power semiconductor modules have been known for a long time. In this power semiconductor module, the connection elements for the external connections are arranged in the plastic housing. From WO 98/52221 a generic power semiconductor module is known, in which the connection elements are pressed into the openings of the plastic housing. This improves the reliability of the internal bond connections between the connection elements and the substrate, since there is no longer any danger that the connection elements will become loose in the plastic housing. The lead described there The semiconductor module therefore has guide elements along the plastic housing, in some of which connection elements are introduced. The number and the locations at which the connection elements are introduced into the guide elements are dependent on the electrical structure within the power semiconductor module. A cover is then applied to the power semiconductor module. The connection elements protrude from the cover, that is, the connection elements are inserted through the openings in the cover. The openings are arranged so that unused guide elements are closed by the cover. The cover consequently has openings at the points at which the connection elements are to be carried out. However, this has the consequence that different covers have to be manufactured for different arrangements of the connection elements in a power semiconductor module. This requires separate tools for creating the cover and for mounting with the respective power semiconductor module. This also requires a high logistical effort.
Ausgehend von diesem Stand der Technik besteht die Aufgabe der vorliegenden Erfindung darin, ein gattungsgemaßes Leistungshalbleitermodul mit einem Deckel anzugeben, bei dem Anschlußelemente aus dem Deckel herausragen, wobei jedoch unab- hangig von der Anordnung der externen Anschlußelemente dasProceeding from this prior art, the object of the present invention is to provide a generic power semiconductor module with a cover, in which connection elements protrude from the cover, but this is independent of the arrangement of the external connection elements
Gehauseinnere des Leistungshalbleitermoduls dicht verschlossen sein soll. Ferner sollen das Leistungshalbleitermodul beziehungsweise der Deckel möglichst einfach und kostengünstig herstellbar sein.Interior of the power semiconductor module should be tightly closed. Furthermore, the power semiconductor module or the cover should be as simple and inexpensive to manufacture as possible.
Erfmdungsgemaß wird diese Aufgabe durch eine Leistungshalbleitermodul mit den Merkmalen des Patentanspruchs 1 gelost, also durch ein gattungsgemaßes Leistungshalbleitermodul, das gekennzeichnet ist durch Anschlußelemente, die über m den Deckel einbringbare Offnungen nach außen ragen. Durch diese Maßnahme brauchen bei der Herstellung des Deckels keine Offnungen an den Stellen, an denen Anschlußelemente vorhanden sind, vorgesehen werden. Die Offnungen werden viel- mehr erst dadurch erzeugt, daß der Deckel auf das Leistungs¬ halbleitermodul aufgesetzt wird und durch die Anschlußelemente die Offnungen an den jeweiligen Stellen in den Deckel eingebracht werden. Hierdurch ist es ausreichend, nur einen einzigen Deckel herzustellen, der für alle denkbaren Anordnungen der Anschlußelemente m den Fuhrungselementen möglich ist.According to the invention, this object is achieved by a power semiconductor module with the features of patent claim 1, that is to say by a generic power semiconductor module which is characterized by connecting elements which project outward openings that can be introduced through the cover. As a result of this measure, no openings need to be provided at the points at which connection elements are present during the production of the cover. The openings are Rather only produced in that the cover on the power ¬ is placed semiconductor module and the openings are placed at the respective locations in the cover by the connection elements. As a result, it is sufficient to produce only a single cover, which is possible for all conceivable arrangements of the connection elements in the guide elements.
Der Herstellungsaufwand ist somit vereinfacht und die Kosten sind wesentlich geringer.The manufacturing effort is thus simplified and the costs are significantly lower.
In einer Weiterbildung der vorliegenden Erfindung sind n em- bringbare Offnungen m dem Deckel vorgesehen. Vorteilhafter- weise sind die n einbringbaren Offnungen und die n Fuhrungen derart angeordnet, daß die Anschlußelemente orthogonal zum Gehauseboden beziehungsweise Deckel aus dem Leistungshalbleitermodul ragen. Dies bedeutet nichts anderes, als das die n einbringbaren Offnungen und die n Fuhrungen übereinander angeordnet sind. Die Anzahl n der einbringbaren Offnungen und der Fuhrungen ist folglich gleich. Der Platzhalter n steht m der vorliegenden Erfindung für die Anzahl der im Leistungshalbleitermodul vorhandenen Fuhrungselemente beziehungsweise der im Deckel einbringbaren Offnungen. Durch diese Vorgehensweise ist zu jedem Leistungshalbleitermodul nur noch ein einziger Deckeltyp notwendig.In a further development of the present invention, n removable openings are provided in the cover. Advantageously, the n openings that can be introduced and the n guides are arranged in such a way that the connection elements protrude orthogonally to the housing floor or cover from the power semiconductor module. This means nothing other than that the n insertable openings and the n guides are arranged one above the other. The number n of openings that can be made and the number of guides is therefore the same. In the present invention, the placeholder n stands for the number of guide elements present in the power semiconductor module or the openings that can be made in the cover. This procedure means that only one type of cover is required for each power semiconductor module.
Vorteilhafterweise weist der Deckel an Stellen der embnng- baren Offnungen Sollbruchstellen auf. Hierdurch wird das Durchstoßen der einbringbaren Offnungen mittels des Anschlußelemente erleichtert. Die Sollbruchstellen können durch ein Vorstanzen an den Stellen der einbringbaren Offnungen erzeugt werden. Bei der Deckelmontage bricht der Deckel punktuell an den Stellen der einbringbaren Offnungen auf. Es bilden sich Klappen die sich an Anschlußelemente anschmiegen. Der Deckel verschließt alle anderen, nicht durch Anschlußelemente beleg- ten Platze weiterhin zuverlässig. Der Deckel ist somit kraft- und formschlussig mit dem Kunststoffgehause verbunden.The cover advantageously has predetermined breaking points at the locations of the receptive openings. This makes it easier to pierce the openings that can be introduced by means of the connecting elements. The predetermined breaking points can be created by pre-punching at the locations of the openings that can be introduced. When mounting the lid, the lid breaks open at the points of the openings that can be inserted. Flaps are formed which nestle against connection elements. The cover reliably closes all other spaces not occupied by connection elements. The cover is thus positively and positively connected to the plastic housing.
In einer Weiterbildung der vorliegenden Erfindung weisen die Anschlußelemente Nasen auf, die an der Innenseite des Kunst- stoffgehause anliegen und die Anschlußelemente m ihrer Lage fixieren. Vorzugsweise haben diese Nasen die Gestalt von Widerhaken, so daß die Anschlußelemente eng m den Fuhrungsele- menten gefuhrt werden und gegen ein Herausziehen gesichert sind. Es ist auch denkbar, die Anschlußelemente mit Kropfun- gen zu versehen, welche die Anschlußelemente m den Fuhrungs- elementen fixieren.In a further development of the present invention, the connection elements have lugs which rest on the inside of the plastic housing and fix the connection elements in their position. These lugs preferably have the shape of barbs, so that the connection elements are guided closely to the guide elements and are secured against being pulled out. It is also conceivable to provide the connection elements with goitles which fix the connection elements in the guide elements.
Vorzugsweise ist das Gehauseinnere zumindest teilweise mit einer Vergießmasse gefüllt. Dies dient zur feuchtedichten Kapselung. Idealerweise ist hierzu als Vergießmasse eineThe interior of the housing is preferably at least partially filled with a casting compound. This is used for moisture-tight encapsulation. Ideally this is a casting compound
Weichvergießmasse und eine Hartvergießmasse auf der Weichvergießmasse vorgesehen.Soft casting compound and a hard casting compound are provided on the soft casting compound.
Typischerweise besteht das Kunststoffgehause aus einem Rah- men, wobei die Anschlußelemente in dem Rahmen angeordnet sind.The plastic housing typically consists of a frame, the connection elements being arranged in the frame.
Vorteilhafte Weiterbildungen und Ausgestaltungen der Erfindung ergeben sich aus den weiteren Unteranspruchen, der Be- Schreibung und den Figuren der Zeichnung.Advantageous further developments and refinements of the invention result from the further subclaims, the description and the figures of the drawing.
Im folgenden wird die Erfindung anhand der nachstehenden Figuren naher erläutert. Es zeigt: Figur 1 einen Schnitt durch ein Leistungshalbleitermodul mit einem Kunststoffgehause und einem dazugehörigen Deckel;The invention is explained in more detail below with reference to the figures below. It shows: 1 shows a section through a power semiconductor module with a plastic housing and an associated cover;
Figur 2 einen Draufsicht auf das Leistungshalbleitermodul mit Blick m das Gehauseinnere;Figure 2 is a plan view of the power semiconductor module with a view of the interior of the housing;
Figur 3a eine Draufsicht auf die Außenseite des erfindungs- gemaßen Deckels, so wie dieser auf das Kunststoff- gehause aufgebracht ist und3a shows a plan view of the outside of the cover according to the invention, as it is applied to the plastic housing, and
Figur 3b eine Draufsicht auf die Innenseite des erfindungs- gemaßen Deckels mit eingebrachten Offnungen und den Sollbruchstellen.FIG. 3b shows a plan view of the inside of the cover according to the invention with the openings made and the predetermined breaking points.
Wie aus der Figur 1 zu ersehen ist, besteht das Leistungshalbleitermodul 1 aus einem Kunststoffgehause 2, in das als Gehauseboden 6 eine Keramikplatte 5 eingesetzt ist. Diese ist auf der oberen Seite 7 und der unteren Seite 8 mit einer Me- tallisierung 11 versehen. Die Metallisierung 11 auf der oberen Seite 7 ist dem Gehauseinnere 15 zugewandt und ist zur Bildung von Leiterbahnen strukturiert. Auf dieser Seite 7 der Keramikplatte 5 sind Halbleiterbauelemente 9 aufgebracht. Diese Halbleiterbauelemente 9 sind zum Beispiel Leistungs- halbleiterbauteile wie IGBTs, MCTs, Leistungstransitoren oder Leistungsdioden. Weiterhin sind Halbleiterbauelemente 9 vorgesehen, die eine Steuerfunktion übernehmen. Desweiteren befinden sich dort Verbindungselemente 10, die die Gestalt von Aluminiumdrahten aufweisen. Diese Verbindungselemente 10 wer- den über Bondverfahren auf den Halbleiterbauelementen 9 beziehungsweise der Metallisierung 11 aufgebracht.As can be seen from FIG. 1, the power semiconductor module 1 consists of a plastic housing 2, in which a ceramic plate 5 is inserted as the housing base 6. This is provided on the upper side 7 and the lower side 8 with a metalization 11. The metallization 11 on the upper side 7 faces the interior 15 of the housing and is structured to form conductor tracks. Semiconductor components 9 are applied to this side 7 of the ceramic plate 5. These semiconductor components 9 are, for example, power semiconductor components such as IGBTs, MCTs, power transistors or power diodes. Furthermore, semiconductor components 9 are provided, which assume a control function. Furthermore, there are connecting elements 10, which have the shape of aluminum wires. These connecting elements 10 are applied to the semiconductor components 9 or the metallization 11 by means of bonding methods.
Das Kunststoffgehause 2 ist m der Form eines Rahmens ausgebildet, bei dem Anschlußelemente 4 m Fuhrungselementen 3 des Kunststoffrahmens 2 vorgesehen sind. Die Anschlußelemente 4 sind dabei von der Oberseite her m die Fuhrungselemente 3 eingesteckt und werden hierdurch fixiert. Die Anschlußelemente 4 weisen Nasen 14 auf, die an der Innenseite des Kunststoffgehauses 2 anliegen. Dadurch werden die Anschlußelemente m ihrer Lage fixiert. Diese Nasen 14 haben die Funktion von Widerhaken, die die Anschlußelemente 4 gegen unbeabsichtigtes Herausziehen sichern. Dadurch sind die Bondverbmdun- gen zwischen den Anschlußelementen 4 und dem Halbleiterbau- elementen 9 beziehungsweise der Metallisierung 11 gegen Zer- Störung gesichert. Die Anschlußelemente verlaufen im Gehauseinneren m etwa parallel zum Gehauseboden β.The plastic housing 2 is formed in the shape of a frame, in which connection elements 4 m guide elements 3 of the plastic frame 2 are provided. The connecting elements 4 the guide elements 3 are inserted from the top and are thereby fixed. The connection elements 4 have lugs 14 which bear against the inside of the plastic housing 2. As a result, the connection elements are fixed in their position. These lugs 14 have the function of barbs, which secure the connecting elements 4 against unintentional pulling out. As a result, the bond connections between the connection elements 4 and the semiconductor components 9 or the metallization 11 are secured against destruction. The connecting elements run in the interior of the housing m approximately parallel to the housing base β.
Das Leistungshalbleitermodul 1 weist ferner einen Deckel 12 auf, der das Modul m seiner Endposition verschließt. Dabei sind die Anschlußelemente 4 durch Offnungen 13 m dem Deckel gesteckt, die m der endgültigen Position des Deckels aus diesem herausragen. Der Deckel verschließt dabei nicht benutzte Fuhrungselemente 3.The power semiconductor module 1 also has a cover 12 which closes the module in its end position. The connecting elements 4 are inserted through openings 13 m in the cover, which protrude from the final position of the cover. The cover closes unused guide elements 3.
An der Unterseite weist das Leistungshalbleitermodul einenThe power semiconductor module has one on the underside
Kühlkörper 16 auf, der zum einen mit dem Kunststoffgehause 2, zum anderen mit dem Gehauseboden 6 verbunden ist.Heat sink 16, which is connected on the one hand to the plastic housing 2 and on the other hand to the housing base 6.
Figur 2 zeigt eine Draufsicht auf das Leistungshalbleitermo- dul 1, wobei der Gehauseboden mit dem Kunststoffgehause 2 bereits verbunden ist. Aus dieser Perspektive wird ersichtlich, daß die Fuhrungselemente entlang des gesamten Umfangs des Kunststoffgehauses 2 m regelmäßigen Abstanden angebracht sind. Es ist selbstverständlich nicht notwendig, die Fuh- rungselemente m regelmäßigen Abstanden sowie entlang des gesamten Umfangs anzubringen. Nur wenige der Fuhrungselemente 3 sind mit Anschlußelementen 4 bestückt. Durch das Vorsehen der Fuhrungselemente 3 entlang des gesamten Umfangs des Kunststoffgehauses 2 kann eine flexible Bestückung des Leistungs- halbleitermodules erfolgen. Entsprechend der Anordnung der Halbleiterbauelemente können an den geeignetsten Positionen die Anschlußelemente 4 m den Fuhrungselementen 3 vorgesehen werden. Hierdurch sind kurze Bondverbindungen zwischen den Anschlußelementen und den Halbleiterbauelementen beziehungs- weise der Metallisierung 11 möglich.FIG. 2 shows a top view of the power semiconductor module 1, the housing base having already been connected to the plastic housing 2. From this perspective it can be seen that the guide elements are arranged at regular intervals of 2 m along the entire circumference of the plastic housing. It is of course not necessary to attach the guide elements at regular intervals and along the entire circumference. Only a few of the guide elements 3 are equipped with connection elements 4. By providing the guide elements 3 along the entire circumference of the plastic housing 2, the power semiconductor module can be flexibly equipped. According to the arrangement of the Semiconductor components can be provided in the most suitable positions, the connection elements 4 m the guide elements 3. As a result, short bond connections between the connection elements and the semiconductor components or the metallization 11 are possible.
In Figur 3 a ist eine Draufsicht auf die Außenseite des Dek- kels gezeigt, so wie er korrekt mit dem Kunststoffgehause in Figur 2 verbunden werden wurde. Hierbei sind bereits die Off- nungen 13 sichtbar, die an den Stellen der Anschlußelemente 4 eingebracht sind. Die Offnungen 13 sind dabei erst beim Zusammenfugen des Deckels 12 und des Kunststoffgehauses 2 durch ein Durchstoßen mit den Anschlußelementen eingebracht. In Figur 3b ist die Innenseite, das heißt die Seite des Deckels, die dem Gehauseinneren zugewandt, dargestellt. Hier ist ersichtlich, daß der Deckel an den Stellen der Fuhrungselemente 3 des Kunststoffgehauses 3 Sollbruchstellen 18 aufweist. Diese können beispielsweise durch ein Vorstanzen erzeugt sein. Zwischen zwei einbringbaren Offnungen 13 sind jeweils Stege 17 angeordnet, die durch das Vorstanzen der Sollbruchstellen 18 verblieben sind.FIG. 3 a shows a top view of the outside of the cover, as it was correctly connected to the plastic housing in FIG. 2. The openings 13 which are introduced at the locations of the connecting elements 4 are already visible here. The openings 13 are only introduced when the cover 12 and the plastic housing 2 are joined by piercing the connecting elements. FIG. 3b shows the inside, that is to say the side of the cover, which faces the interior of the housing. Here it can be seen that the cover has 3 predetermined breaking points 18 at the locations of the guide elements 3 of the plastic housing. These can be produced, for example, by pre-punching. Between two openings 13 that can be inserted, webs 17 are arranged, which have remained through the pre-punching of the predetermined breaking points 18.
Bezugszeichenliste:Reference symbol list:
1 Leistungshalbleitermodul1 power semiconductor module
2 Kunststoffgehause2 plastic housings
3 Fuhrungselement3 guide element
4 Anschlußelement 5 Keramikplatte4 connecting element 5 ceramic plate
6 Gehauseboden6 case floor
7 Obere Seite der Kerami kplatte7 Upper side of the ceramic plate
8 Untere Seite der Kerami kplatte8 Lower side of the ceramic plate
9 Halbleiterbauelement 10 Verbmdungselement Metallisierung9 semiconductor component 10 connecting element Metallization
Deckelcover
Öffnungenopenings
NasenNoses
GehäuseinnereInterior of the housing
KühlkörperHeatsink
Stegweb
Sollbruchstelle Predetermined breaking point

Claims

Patentansprüche : Claims:
1. Leistungshalbleitermodul (1)1. Power semiconductor module (1)
- mit einem als Rahmen ausgebildeten Kunststoffgehause (2), an dessen Innenseite m vorgegebenen Abstanden eine Anzahl n Fuhrungen (3) für externe Anschlußelemente (4) vorgesehen sind,with a plastic housing (2) designed as a frame, on the inside of which m predetermined distances a number n guides (3) are provided for external connection elements (4),
- mit einem als Keramikplatte (5) ausgebildeten Gehauseboden- With a ceramic plate (5) formed housing floor
(6), der m das Kunststoffgehause (2) eingesetzt ist, wobei die Keramikplatte jeweils auf ihrer oberen und ihrer unteren Seite (7,8) eine Metallisierung (11) aufweist, die auf der oberen, dem Gehauseinneren zugewandten Seite (6) zur Bildung von Leiterbahnen strukturiert ist und die mit zumindest einem Halbleiterbauelement (9) und Verbmdungsele- menten (10) bestuckt ist,(6), which is used in the plastic housing (2), the ceramic plate each having on its upper and lower side (7, 8) a metallization (11) on the upper side (6) facing the housing interior Formation of conductor tracks is structured and which is equipped with at least one semiconductor component (9) and connection elements (10),
- mit maximal n in den Fuhrungen (3) fixierten, äußere Anschlüsse bildenden Anschlußelementen, die an ihren unteren Enden Bondflachen aufweisen und die über die Verbmdungs- elemente (10) mit dem zumindest einen Halbleiterbauelement (9) und/oder mit der Metallisierung (11) elektrisch verbunden sind,- With a maximum of n connecting elements fixed in the guides (3) and forming external connections, which have bonding surfaces at their lower ends and which via the connecting elements (10) with the at least one semiconductor component (9) and / or with the metallization (11 ) are electrically connected,
- mit einem mit dem Kunststoffgehause (2) verbindbaren Deckel- With a lid that can be connected to the plastic housing (2)
(12), d a d u r c h g e k e n n z e i c h n e t, daß die Anschlußelemente (4) durch über in den Deckel (12) einbringbare Offnungen (13) nach außen ragen.(12), so that the connection elements (4) protrude outwards through openings (13) that can be inserted into the cover (12).
2. Leistungshalbleitermodul nach Anspruch 1, d a d u r c h g e k e n n z e i c h n e t, daß n einbringbare Offnungen (13) m dem Deckel (12) vorgesehen sind. 2. Power semiconductor module according to claim 1, characterized in that n insertable openings (13) m the cover (12) are provided.
3. Leistungshalbleitermodul nach Anspruch 1 oder 2, d a d u r c h g e k e n n z e i c h n e t, daß die n einbringbaren Offnungen (13) und die n F hrungen (3) derart angeordnet sind, daß die Anschlußelemente orthogo- 5 nal zum Gehauseboden (6) beziehungsweise Deckel (12) aus dem Leistungshalbleitermodul (1) ragen.3. Power semiconductor module according to claim 1 or 2, characterized in that the n insertable openings (13) and the n guides (3) are arranged such that the connection elements orthogonal 5 to the housing floor (6) or cover (12) from the Power semiconductor module (1) protrude.
4. Leistungshalbleitermodul nach einem der Ansprüche 1 bis 3, d a d u r c h g e k e n n z e i c h n e t,4. Power semiconductor module according to one of claims 1 to 3, d a d u r c h g e k e n n z e i c h n e t,
10 daß die Offnungen (13) beim Zusammenf gen des Deckels (12) und des Kunststoffgehauses (2) durch Durchstoßen mit den Anschlußelementen (4) eingebracht sind.10 that the openings (13) are introduced by collapsing the cover (12) and the plastic housing (2) by piercing the connecting elements (4).
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5. Leistungshalbleitermodul nach einem der Ansprüche 1 bis 4, 15 d a d u r c h g e k e n n z e i c h n e t, daß der Deckel (12) an Stellen der einbringbaren Offnungen (13) Sollbruchstellen aufweist.5. Power semiconductor module according to one of claims 1 to 4, 15 d a d u r c h g e k e n z e i c h n e t that the cover (12) has predetermined breaking points at locations of the openings (13) which can be introduced.
6. Leistungshalbleitermodul nach einem der Ansprüche 1 bis 5, 20 d a d u r c h g e k e n n z e i c h n e t, daß der Deckel (12) kraftschlussig und formschlussig mit dem Kunststoffgehause (2) verbunden ist.6. Power semiconductor module according to one of claims 1 to 5, 20 d a d u r c h g e k e n z e i c h n e t that the cover (12) is positively and positively connected to the plastic housing (2).
7. Leistungshalbleitermodul nach einem der Ansprüche 1 bis 6, 25 d a d u r c h g e k e n n z e i c h n e t, daß die Anschlußelemente (4) Nasen (14) aufweisen, die an der Innenseite des Kunststoffgehauses (2) anliegen und die Anschlußelemente m ihrer Lage fixieren.7. Power semiconductor module according to one of claims 1 to 6, 25 d a d u r c h g e k e n n z e i c h n e t that the connection elements (4) have lugs (14) which rest on the inside of the plastic housing (2) and fix the connection elements in their position.
30 8. Leistungshalbleitermodul nach einem der Ansprüche 1 bis 7, d a d u r c h g e k e n n z e i c h n e t, daß das Gehauseinnere (15) zumindest teilweise mit einer Vergießmasse gefüllt ist.30 8. Power semiconductor module according to one of claims 1 to 7, d a d u r c h g e k e n z e i c h n e t that the interior of the housing (15) is at least partially filled with a potting compound.
35 9. Leistungshalbleitermodul nach Anspruch 8, d a d u r c h g e k e n n z e i c h n e t, daß als Vergießmasse eine Weichgießmasse und eine Hartvergießmasse auf der Weichvergießmasse vorgesehen ist. 35 9. Power semiconductor module according to claim 8, characterized in that a soft casting compound and a hard casting compound is provided on the soft casting compound as casting compound.
10. Leistungshalbleitermodul nach einem der Ansprüche 1 bis 9, d a d u r c h g e k e n n z e i c h n e t, daß das Kunststoff gehause (2) als Rahmen ausgeführt ist. 10. Power semiconductor module according to one of claims 1 to 9, d a d u r c h g e k e n n z e i c h n e t that the plastic housing (2) is designed as a frame.
PCT/DE2000/000031 1999-01-12 2000-01-04 Power semiconductor module with cover WO2000042656A1 (en)

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FR2859066A1 (en) * 2003-08-14 2005-02-25 Int Rectifier Corp MOSFET-type power module for electric motors in car, has moulded casing having walls enclosing lower portion including conductive zones, and moulding material filling spaces between zones so that lower portion and walls form unified body
EP2381751A1 (en) * 2010-04-16 2011-10-26 Honda Motor Co., Ltd. Auxiliary board joining structure
US8399976B2 (en) 2008-02-27 2013-03-19 Mitsubishi Electric Corporation Resin sealed semiconductor device and manufacturing method therefor
CN105765716A (en) * 2014-05-15 2016-07-13 富士电机株式会社 Power semiconductor module and composite module
CN106449526A (en) * 2015-08-10 2017-02-22 英飞凌科技股份有限公司 Power semiconductor module with improved sealing
CN106531693A (en) * 2015-09-15 2017-03-22 富士电机株式会社 Semiconductor device
EP4350755A4 (en) * 2022-01-29 2024-09-25 Huawei Digital Power Tech Co Ltd Cover plate, power module and electronic device

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JP4242401B2 (en) 2006-06-29 2009-03-25 三菱電機株式会社 Semiconductor device
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Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2859066A1 (en) * 2003-08-14 2005-02-25 Int Rectifier Corp MOSFET-type power module for electric motors in car, has moulded casing having walls enclosing lower portion including conductive zones, and moulding material filling spaces between zones so that lower portion and walls form unified body
US8399976B2 (en) 2008-02-27 2013-03-19 Mitsubishi Electric Corporation Resin sealed semiconductor device and manufacturing method therefor
US8785252B2 (en) 2008-02-27 2014-07-22 Mitsubishi Electric Corporation Resin sealed semiconductor device and manufacturing method therefor
EP2381751A1 (en) * 2010-04-16 2011-10-26 Honda Motor Co., Ltd. Auxiliary board joining structure
CN105765716A (en) * 2014-05-15 2016-07-13 富士电机株式会社 Power semiconductor module and composite module
CN106449526A (en) * 2015-08-10 2017-02-22 英飞凌科技股份有限公司 Power semiconductor module with improved sealing
CN106531693A (en) * 2015-09-15 2017-03-22 富士电机株式会社 Semiconductor device
CN106531693B (en) * 2015-09-15 2021-06-11 富士电机株式会社 Semiconductor device with a plurality of semiconductor chips
EP4350755A4 (en) * 2022-01-29 2024-09-25 Huawei Digital Power Tech Co Ltd Cover plate, power module and electronic device

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