WO2000034550A3 - Depot chimique en phase vapeur a basse temperature pour la preparation de films ferroelectriques avec utilisation d'aryles de bismuth - Google Patents

Depot chimique en phase vapeur a basse temperature pour la preparation de films ferroelectriques avec utilisation d'aryles de bismuth Download PDF

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Publication number
WO2000034550A3
WO2000034550A3 PCT/US1999/028833 US9928833W WO0034550A3 WO 2000034550 A3 WO2000034550 A3 WO 2000034550A3 US 9928833 W US9928833 W US 9928833W WO 0034550 A3 WO0034550 A3 WO 0034550A3
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WO
WIPO (PCT)
Prior art keywords
oxide
film
aryl
cvd processes
ferroelectric
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Application number
PCT/US1999/028833
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English (en)
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WO2000034550A2 (fr
Inventor
Frank S Hintermaier
Buskirk Peter C Van
Jeffrey F Roeder
Bryan C Hendrix
Thomas H Baum
Debra A Desrochers
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Infineon Technologies Ag
Advanced Tech Materials
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Publication of WO2000034550A2 publication Critical patent/WO2000034550A2/fr
Publication of WO2000034550A3 publication Critical patent/WO2000034550A3/fr

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02197—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides the material having a perovskite structure, e.g. BaTiO3
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/407—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02356—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment to change the morphology of the insulating layer, e.g. transformation of an amorphous layer into a crystalline layer

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

La présente invention concerne un procédé de dépôt chimique en phase vapeur servant à la formation d'un film d'oxyde de bismuth, d'oxyde de strontium et d'oxyde de tantale sur un substrat chauffé, et ce, par décomposition de précurseurs de ces oxydes contre le substrat. Le précurseur de l'oxyde de bismuth, qui est un complexe bismuthé incluant au moins un groupe aryle, se décompose et se dépose à une température inférieure à 450°C. Le film d'oxydes de bismuth, de strontium et de tantale obtenu par ce procédé de dépôt chimique en phase vapeur est essentiellement non ferroélectrique, mais un traitement thermique ultérieur permet d'en faire un film ferroélectrique.
PCT/US1999/028833 1998-12-09 1999-12-06 Depot chimique en phase vapeur a basse temperature pour la preparation de films ferroelectriques avec utilisation d'aryles de bismuth WO2000034550A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US20854498A 1998-12-09 1998-12-09
US09/208,544 1998-12-09

Publications (2)

Publication Number Publication Date
WO2000034550A2 WO2000034550A2 (fr) 2000-06-15
WO2000034550A3 true WO2000034550A3 (fr) 2002-09-19

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Application Number Title Priority Date Filing Date
PCT/US1999/028833 WO2000034550A2 (fr) 1998-12-09 1999-12-06 Depot chimique en phase vapeur a basse temperature pour la preparation de films ferroelectriques avec utilisation d'aryles de bismuth

Country Status (2)

Country Link
TW (1) TW575679B (fr)
WO (1) WO2000034550A2 (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004256510A (ja) * 2003-02-26 2004-09-16 Toyoshima Seisakusho:Kk Ｃｖｄ用ビスマス原料溶液及びこれを用いたビスマス含有薄膜の製造方法
CN105462586A (zh) * 2015-11-30 2016-04-06 青岛大学 一种橙色长余辉发光材料及其制备方法
CN110698195B (zh) * 2019-11-12 2022-05-17 杭州电子科技大学 一种高电阻率、高压电活性钛酸铋钙基高温压电陶瓷及其制备方法
CN113321500B (zh) * 2021-06-30 2022-06-24 山东大学 一种高居里温度压电陶瓷及其制备方法

Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1995002897A1 (fr) * 1993-07-12 1995-01-26 Symetrix Corporation Procede de fabrication des materiaux en couches a structure super-reseau par depot de vapeurs chimiques
EP0716162A1 (fr) * 1994-12-06 1996-06-12 Sharp Kabushiki Kaisha Couche mince ferroélectrique, substrat recouvert d'une couche mince ferroélectrique et procédé de fabrication d'une couche mince ferroélectrique
US5527567A (en) * 1994-09-02 1996-06-18 Ceram Incorporated Metalorganic chemical vapor deposition of layered structure oxides
WO1996040690A1 (fr) * 1995-06-07 1996-12-19 Advanced Technology Materials, Inc. Reactifs a base de complexes metalliques pour depot en phase gazeuse par procede chimique
EP0760400A2 (fr) * 1995-08-22 1997-03-05 Sony Corporation Procédé pour la fabrication de composés à base de bismuth et composés à base de bismuth
US5612082A (en) * 1991-12-13 1997-03-18 Symetrix Corporation Process for making metal oxides
EP0766319A2 (fr) * 1995-09-29 1997-04-02 Sony Corporation Condensateur ayant un film ferro-électrique pour cellule de mémoire nonvolatile et procédé de fabrication
EP0781736A2 (fr) * 1995-12-27 1997-07-02 Sharp Kabushiki Kaisha Film mince ferroélectrique, substrat recouvert d'un film mince ferroélectrique, dispositif comportant une structure de condensateur et méthode de fabrication d'un film mince ferroélectrique
EP0795898A2 (fr) * 1996-03-13 1997-09-17 Hitachi, Ltd. Elément ferroélectrique et méthode de fabrication
EP0849780A2 (fr) * 1996-12-20 1998-06-24 Sharp Kabushiki Kaisha Méthode de fabrication d'une couche ferroélectrique, substrat recouvert de cette couche, et condensateur
EP0878837A2 (fr) * 1997-05-13 1998-11-18 Sharp Kabushiki Kaisha Couche mince ferroélectrique comprenant une couche intermédiaire et composée de Bismuth
WO1999032685A1 (fr) * 1997-12-23 1999-07-01 Siemens Aktiengesellschaft Procede de depot selectif de couches minces ferroelectriques a base de bismuth

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5612082A (en) * 1991-12-13 1997-03-18 Symetrix Corporation Process for making metal oxides
WO1995002897A1 (fr) * 1993-07-12 1995-01-26 Symetrix Corporation Procede de fabrication des materiaux en couches a structure super-reseau par depot de vapeurs chimiques
US5527567A (en) * 1994-09-02 1996-06-18 Ceram Incorporated Metalorganic chemical vapor deposition of layered structure oxides
EP0716162A1 (fr) * 1994-12-06 1996-06-12 Sharp Kabushiki Kaisha Couche mince ferroélectrique, substrat recouvert d'une couche mince ferroélectrique et procédé de fabrication d'une couche mince ferroélectrique
WO1996040690A1 (fr) * 1995-06-07 1996-12-19 Advanced Technology Materials, Inc. Reactifs a base de complexes metalliques pour depot en phase gazeuse par procede chimique
EP0760400A2 (fr) * 1995-08-22 1997-03-05 Sony Corporation Procédé pour la fabrication de composés à base de bismuth et composés à base de bismuth
EP0766319A2 (fr) * 1995-09-29 1997-04-02 Sony Corporation Condensateur ayant un film ferro-électrique pour cellule de mémoire nonvolatile et procédé de fabrication
EP0781736A2 (fr) * 1995-12-27 1997-07-02 Sharp Kabushiki Kaisha Film mince ferroélectrique, substrat recouvert d'un film mince ferroélectrique, dispositif comportant une structure de condensateur et méthode de fabrication d'un film mince ferroélectrique
EP0795898A2 (fr) * 1996-03-13 1997-09-17 Hitachi, Ltd. Elément ferroélectrique et méthode de fabrication
EP0849780A2 (fr) * 1996-12-20 1998-06-24 Sharp Kabushiki Kaisha Méthode de fabrication d'une couche ferroélectrique, substrat recouvert de cette couche, et condensateur
EP0878837A2 (fr) * 1997-05-13 1998-11-18 Sharp Kabushiki Kaisha Couche mince ferroélectrique comprenant une couche intermédiaire et composée de Bismuth
WO1999032685A1 (fr) * 1997-12-23 1999-07-01 Siemens Aktiengesellschaft Procede de depot selectif de couches minces ferroelectriques a base de bismuth

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WO2000034550A2 (fr) 2000-06-15
TW575679B (en) 2004-02-11

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